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Статті в журналах з теми "Atomic-resolution TEM"
Bell, David C., Christopher J. Russo, and Dmitry V. Kolmykov. "40keV atomic resolution TEM." Ultramicroscopy 114 (March 2012): 31–37. http://dx.doi.org/10.1016/j.ultramic.2011.12.001.
Повний текст джерелаYagi, K., H. Sato, K. Kobayashi, Y. Nishiyama, and Y. Tanaka. "TEM study of Si surfaces." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 1 (August 1992): 280–81. http://dx.doi.org/10.1017/s0424820100121806.
Повний текст джерелаLee, Yangjin, Jun-Yeong Yoon, Hu Young Jeong, and Kwanpyo Kim. "Atomic-Resolution TEM Imaging of Phosphorene Protected by Graphene." Microscopy and Microanalysis 25, S2 (August 2019): 1696–97. http://dx.doi.org/10.1017/s1431927619009218.
Повний текст джерелаHashimoto, Hatsujiro. "Contribution of Atomic-Level TEM to Resolution of Structure." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 1 (August 12, 1990): 4–5. http://dx.doi.org/10.1017/s042482010017877x.
Повний текст джерелаCochrane, Heather D., John L. Hutchison, and Donald White. "Surface studies of catalytic ceria using atomic-resolution tem." Ultramicroscopy 31, no. 1 (September 1989): 138–42. http://dx.doi.org/10.1016/0304-3991(89)90044-2.
Повний текст джерелаKrakow, William, David P. Divincenzo, Peter A. Bancel, Eric Cockayne, and Veit Elser. "High-resolution TEM of Al-Cu-Fe quasicrystals." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 1 (August 1992): 118–19. http://dx.doi.org/10.1017/s0424820100120990.
Повний текст джерелаZhang, Xiao Feng, and Takeo Kamino. "Imaging Gas-Solid Interactions in an Atomic Resolution Environmental TEM." Microscopy Today 14, no. 5 (September 2006): 16–19. http://dx.doi.org/10.1017/s1551929500058600.
Повний текст джерелаKujawa, S., B. Freitag, and D. Hubert. "An Aberration Corrected (S)TEM Microscope for Nanoresearch." Microscopy Today 13, no. 4 (July 2005): 16–21. http://dx.doi.org/10.1017/s1551929500053608.
Повний текст джерелаZhang, Xiao Feng. "Enabling Lab-in-Gap Transmission Electron Microscopy at Atomic Resolution." Microscopy Today 24, no. 1 (January 2016): 24–29. http://dx.doi.org/10.1017/s1551929515000930.
Повний текст джерелаHasegawa, Tsuyoshi, Kunio Kobayashi, Nobuyuki Ikarashi, Kunio Takayanagi, and Katsumichi Yagi. "Atomic Resolution TEM Images of the Au(001) Reconstructed Surface." Japanese Journal of Applied Physics 25, Part 2, No. 5 (May 20, 1986): L366—L368. http://dx.doi.org/10.1143/jjap.25.l366.
Повний текст джерелаДисертації з теми "Atomic-resolution TEM"
Cochrane, Heather Dunlop. "Surface studies of catalytic cerias using atomic resolution TEM." Thesis, University of Oxford, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.276508.
Повний текст джерелаHe, Kuang. "Synthesis and atomic resolution AC-TEM characterisation of graphene edges." Thesis, University of Oxford, 2015. https://ora.ox.ac.uk/objects/uuid:32b4ea72-5a60-4c1f-9d93-9d9fe1cc4382.
Повний текст джерелаLi, Siqian. "The atomic struture of inversion domains and grain boundaries in wurtzite semonconductors : an investigation by atomistic modelling and high resolution transmission electron microscopy." Thesis, Normandie, 2018. http://www.theses.fr/2018NORMC252/document.
Повний текст джерелаIn this work, we investigated two kinds of interfacial defects: inversion domain boundaries (IDBs) and grain boundaries (GB) in wurtzite semiconductors (III-nitrides, ZnO and ZnO/GaN heterostructure) using high-resolution TEM and first-principle calculations. For IDBs, theoretical calculation indicated that a head-to-head IDB with an interfacial stacking sequence of AaBbAa-AcCaA (H4) is the most stable structure in wurtzite compounds. Moreover, 2-dimensional electron gas (2DEG) and 2-dimensional hole gas (2DHG) build up in head-to-head and tail-to-tail IDBs, respectively. Considering the IDB at the ZnO/GaN heterointerface, TEM observations unveiled the H4 configuration with a -Zn-O-Ga-N interface. Moreover the theoretical investigation also confirmed stability of this interface along with the corresponding formation of a 2DHG. A detailed topological, TEM and theoretical investigation of [0001] tilt Grain Boundaries (GBs) in wurtzite symmetry has also been carried out. In GaN, it is shown that the GBs are only made of separated a edge dislocations with 4, 5/7 and 8 atoms rings. For ZnO, a new structural unit: the [101 ̅0] edge dislocation made of connected 6-8-4-atom rings is reported for the first time, in agreement with an early theoretical report on dislocations and jogs in the wurtzite symmetry
Bacia, Maria. "Comportement du carbone aux joints de grains du molybdène." Grenoble INPG, 1994. http://www.theses.fr/1994INPG4210.
Повний текст джерелаSun, Xingsheng. "A Computational Framework for Long-Term Atomistic Analysis of Solute Diffusion in Nanomaterials." Diss., Virginia Tech, 2018. http://hdl.handle.net/10919/85242.
Повний текст джерелаPh. D.
Interstitial diffusion in crystalline solids describes a phenomenon in which the solute constituents (e.g., atoms) move from an interstitial space of the host lattice to a neighboring one that is empty. It is a dominating feature in many important engineering applications, such as metal hydrides, lithium-ion batteries and hydrogen-induced material failures. These applications involve some key problems that might take place over long time periods (e.g., longer than 1 s), while the nanoscale behaviors and mechanisms become significant. The time scale of these problems is beyond the capability of established atomistic models, e.g., accelerated Molecular Dynamics and on-the-fly kinetic Monte Carlo. To this end, this dissertation presents the development and application of a new computational framework, referred to as Diffusive Molecular Dynamics (DMD), for the simulation of long-term interstitial solute diffusion in advanced nanomaterials. The framework includes three key components. Firstly, a DMD computational model is proposed, which accounts for three-dimensional, deformation-diffusion coupled analysis of interstitial solute mass transport. Secondly, nu- merical methods are employed to accelerate the DMD simulations while maintaining a high solution accuracy. Thirdly, a high-performance computational solver is developed to implement the DMD model and the numerical methods. Moreover, regarding its application, the DMD framework is first validated and assessed in the numerical experiments pertaining to hydrogen mass transport in palladium crystals. Then, it is employed to investigate the atomic behaviors and mechanisms involved in the long-term hydrogen absorption by palladium nanoparticles with different sizes and shapes. The two-way interaction between hydrogen absorption and lattice deformation is studied in detail.
Bansal, Ujjval. "Development of a coarsening resistant microstructure in precipitation strengthened aluminium alloys with Zr, Ta and Hf." Thesis, 2021. https://etd.iisc.ac.in/handle/2005/5237.
Повний текст джерелаЧастини книг з теми "Atomic-resolution TEM"
Tochigi, Eita, Bin Miao, Shun Kondo, Naoya Shibata, and Yuichi Ikuhara. "TEM Characterization of Lattice Defects Associated with Deformation and Fracture in α-Al2O3." In The Plaston Concept, 133–56. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-16-7715-1_7.
Повний текст джерелаHarano, Koji, and Eiichi Nakamura. "Conformational Analysis of Organic Molecules with Single-Molecule Atomic-Resolution Real-Time Transmission Electron Microscopy (SMART-TEM) Imaging." In Molecular Technology, 339–68. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2019. http://dx.doi.org/10.1002/9783527823987.vol4_c12.
Повний текст джерелаSchmidt-Böcking, H., S. Eckart, H. J. Lüdde, G. Gruber, and T. Jahnke. "The Precision Limits in a Single-Event Quantum Measurement of Electron Momentum and Position." In Molecular Beams in Physics and Chemistry, 223–45. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-63963-1_12.
Повний текст джерелаKrishnan, Kannan M. "Transmission and Analytical Electron Microscopy." In Principles of Materials Characterization and Metrology, 552–692. Oxford University Press, 2021. http://dx.doi.org/10.1093/oso/9780198830252.003.0009.
Повний текст джерелаUeda, O., Y. Sakuma, M. Ozeki, N. Ohtsuka, and K. Nakajima. "High-Resolution TEM Evaluation of InAs/InP Strained Layer Superlattices Grown on (001)InAs Substrates by Atomic Layer Epitaxy." In Control of Semiconductor Interfaces, 531–36. Elsevier, 1994. http://dx.doi.org/10.1016/b978-0-444-81889-8.50097-3.
Повний текст джерелаKrishnan, Kannan M. "Scanning Electron Microscopy." In Principles of Materials Characterization and Metrology, 693–744. Oxford University Press, 2021. http://dx.doi.org/10.1093/oso/9780198830252.003.0010.
Повний текст джерелаТези доповідей конференцій з теми "Atomic-resolution TEM"
Hubbard, William A., Ho Leung Chan, and B. C. Regan. "High-Resolution Conductivity Mapping with STEM EBIC." In ISTFA 2022. ASM International, 2022. http://dx.doi.org/10.31399/asm.cp.istfa2022p0251.
Повний текст джерелаGai, Pratibha. "Atoms in action for energy, healthcare and environment using in-situ atomic resolution environmental (S)TEM." In European Microscopy Congress 2020. Royal Microscopical Society, 2021. http://dx.doi.org/10.22443/rms.emc2020.506.
Повний текст джерелаde Knoop, Ludvig. "Electric Field-Induced Surface Melting of Gold at Room Temperature visualized at Atomic Resolution Using In Situ TEM." In European Microscopy Congress 2020. Royal Microscopical Society, 2021. http://dx.doi.org/10.22443/rms.emc2020.1421.
Повний текст джерелаNguyen, Tai D., Michael A. O'Keefe, Roar Kilaas, Ronald Gronsky, and Jeffrey B. Kortright. "Effects of Fresnel Fringes on TEM Images of Interfaces in X-Ray Multilayers." In Physics of X-Ray Multilayer Structures. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/pxrayms.1992.tub2.
Повний текст джерелаDemarest, James, and John Bruley. "Quantitative SiGe TEM Elemental Analysis in FinFET Test Structures." In ISTFA 2015. ASM International, 2015. http://dx.doi.org/10.31399/asm.cp.istfa2015p0120.
Повний текст джерелаWang, Qi, L. Knight, and J. Thorne. "Imaging Cross Section Of X-ray Multilayer By STM." In Physics of X-Ray Multilayer Structures. Washington, D.C.: Optica Publishing Group, 1994. http://dx.doi.org/10.1364/pxrayms.1994.wc.5.
Повний текст джерелаLund, Mark W. "High reflectivity x-ray multilayers using reactive ion sputtering." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/oam.1991.tuee6.
Повний текст джерелаChang, Chih-Chung, Jian-Chang Lin, Wen-Sheng Wu, Chih-Ying Tasi, and Ching-Lin Chang. "A Novel Technique of Device Measurement after Cross-Sectional FIB in Failure Analysis." In ISTFA 2009. ASM International, 2009. http://dx.doi.org/10.31399/asm.cp.istfa2009p0230.
Повний текст джерелаVahdat, Vahid, David S. Grierson, Kevin T. Turner, and Robert W. Carpick. "Nano-Scale Forces, Stresses, and Tip Geometry Evolution of Amplitude Modulation Atomic Force Microscopy Probes." In ASME 2011 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. ASMEDC, 2011. http://dx.doi.org/10.1115/detc2011-48653.
Повний текст джерелаWest, Paul, and Natasha Starostina. "AFM Capabilities in Characterization of Particle Nanocomposites: From Angstroms to Microns." In ASME 2006 Multifunctional Nanocomposites International Conference. ASMEDC, 2006. http://dx.doi.org/10.1115/mn2006-17020.
Повний текст джерелаЗвіти організацій з теми "Atomic-resolution TEM"
Or, Dani, Shmulik Friedman, and Jeanette Norton. Physical processes affecting microbial habitats and activity in unsaturated agricultural soils. United States Department of Agriculture, October 2002. http://dx.doi.org/10.32747/2002.7587239.bard.
Повний текст джерела