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Готові списки джерел за темами / Atomic Layer Etching

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Добірка наукової літератури з теми "Atomic Layer Etching"

Автор: Grafiati

Опубліковано: 19 жовтня 2024

Оновлено: 31 липня 2025

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Статті в журналах з теми "Atomic Layer Etching"

1

AOYAGI, Yoshinobu, and Takashi MEGURO. "Atomic Layer Etching." Nihon Kessho Gakkaishi 33, no. 3 (1991): 169–74. http://dx.doi.org/10.5940/jcrsj.33.169.

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2

Eliceiri, Matthew, Yoonsoo Rho, Runxuan Li, and Costas P. Grigoropoulos. "Pulsed laser induced atomic layer etching of silicon." Journal of Vacuum Science & Technology A 41, no. 2 (2023): 022602. http://dx.doi.org/10.1116/6.0002399.

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We demonstrate the laser mediated atomic layer etching (ALEt) of silicon. Using a nanosecond pulsed 266 nm laser focused loosely over and in a parallel configuration to the surface of the silicon, we dissociate Cl2 gas to induce chlorination. Then, we use pulsed picosecond irradiation to remove the chlorinated layer. Subsequently, we perform continuous wave (CW) laser annealing to eliminate amorphization caused by the picosecond laser etching. Based on atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS), we observed strong evidence of chlorination and digital etching at 0.

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3

Hatch, Kevin A., Daniel C. Messina, and Robert J. Nemanich. "Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium." Journal of Vacuum Science & Technology A 40, no. 4 (2022): 042603. http://dx.doi.org/10.1116/6.0001871.

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Atomic layer etching driven by self-limiting thermal reactions has recently been developed as a highly conformal and isotropic technique for low damage atomic scale material removal by sequential exposures of vapor phase reactants. Gallium oxide (Ga2O3) is currently among the materials of interest due to a large variety of applications including power electronics, solar cells, gas sensors, and photon detectors. In this study, Ga2O3 was deposited by plasma enhanced atomic layer deposition using trimethylgallium [TMG, Ga(CH3)3] and O2 plasma at a substrate temperature of 200 °C. We report a newl

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4

Reif, Johanna, Martin Knaut, Sebastian Killge, Matthias Albert, Thomas Mikolajick, and Johann W. Bartha. "In situ studies on atomic layer etching of aluminum oxide using sequential reactions with trimethylaluminum and hydrogen fluoride." Journal of Vacuum Science & Technology A 40, no. 3 (2022): 032602. http://dx.doi.org/10.1116/6.0001630.

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Controlled thin film etching is essential for future semiconductor devices, especially with complex high aspect ratio structures. Therefore, self-limiting atomic layer etching processes are of great interest to the semiconductor industry. In this work, a process for atomic layer etching of aluminum oxide (Al2O3) films using sequential and self-limiting thermal reactions with trimethylaluminum and hydrogen fluoride as reactants was demonstrated. The Al2O3 films were grown by atomic layer deposition using trimethylaluminum and water. The cycle-by-cycle etching was monitored throughout the entire

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5

George, Steven M. "(Tutorial) Thermal Atomic Layer Etching." ECS Meeting Abstracts MA2021-02, no. 29 (2021): 847. http://dx.doi.org/10.1149/ma2021-0229847mtgabs.

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6

Ikeda, Keiji, Shigeru Imai, and Masakiyo Matsumura. "Atomic layer etching of germanium." Applied Surface Science 112 (March 1997): 87–91. http://dx.doi.org/10.1016/s0169-4332(96)00995-6.

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7

Yao, Yong Zhao, Yukari Ishikawa, Yoshihiro Sugawara, and Koji Sato. "Removal of Mechanical-Polishing-Induced Surface Damages on 4H-SiC Wafers by Using Chemical Etching with Molten KCl+KOH." Materials Science Forum 778-780 (February 2014): 746–49. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.746.

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High temperature (>1000 °C) chemical etching using molten KCl or molten KCl+KOH as the etchant has been carried out to remove the mechanical-polishing (MP) induced damage layer from 4H-SiC surface. Atomic force microscopy observations have shown that line-shaped surface scratches that have appeared on the as-MPed surface could be completely removed by KCl-only etching or by KCl+KOH etching (KCl:KOH=99:1 in weight) at ~1100 °C. Between the two recipes, KCl+KOH etching has shown a higher etch rate (6~7 times) and is able to remove ~9 μm and ~36 μm-thick damage layer from the Si (0001) and the

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8

Oh, Chang-Kwon, Sang-Duk Park, and Geun-Young Yeom. "Atomic Layer Etching of Silicon Using a Ar Neutral Beam of Low Energy." Korean Journal of Materials Research 16, no. 4 (2006): 213–17. http://dx.doi.org/10.3740/mrsk.2006.16.4.213.

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9

Nieminen, Heta-Elisa, Mykhailo Chundak, Mikko J. Heikkilä, et al. "In vacuo cluster tool for studying reaction mechanisms in atomic layer deposition and atomic layer etching processes." Journal of Vacuum Science & Technology A 41, no. 2 (2023): 022401. http://dx.doi.org/10.1116/6.0002312.

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In this paper, we introduce a vacuum cluster tool designed specifically for studying reaction mechanisms in atomic layer deposition (ALD) and atomic layer etching (ALE) processes. In the tool, a commercial flow-type ALD reactor is in vacuo connected to a set of UHV chambers so that versatile surface characterization is possible without breaking the vacuum environment. This way the surface composition and reaction intermediates formed during the precursor or etchant pulses can be studied in very close to true ALD and ALE processing conditions. Measurements done at each step of the deposition or

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10

Hirano, Tomoki, Kenya Nishio, Takashi Fukatani, Suguru Saito, Yoshiya Hagimoto, and Hayato Iwamoto. "Characterization of Wet Chemical Atomic Layer Etching of InGaAs." Solid State Phenomena 314 (February 2021): 95–98. http://dx.doi.org/10.4028/www.scientific.net/ssp.314.95.

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In this work, we characterized the wet chemical atomic layer etching of an InGaAs surface by using various surface analysis methods. For this etching process, H2O2 was used to create a self-limiting oxide layer. Oxide removal was studied for both HCl and NH4OH solutions. Less In oxide tended to remain after the HCl treatment than after the NH4OH treatment, so the combination of H2O2 and HCl is suitable for wet chemical atomic layer etching. In addition, we found that repetition of this etching process does not impact on the oxide amount, surface roughness, and interface state density. Thus, na

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Більше джерел

Дисертації з теми "Atomic Layer Etching"

1

Gong, Yukun. "Electrochemical Atomic Layer Etching of Copper and Ruthenium." Case Western Reserve University School of Graduate Studies / OhioLINK, 2021. http://rave.ohiolink.edu/etdc/view?acc_num=case1625783128128316.

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2

Dallorto, Stefano [Verfasser], Ivo W. [Akademischer Betreuer] Rangelow, Adam Gutachter] Schwartzberg, and Steffen [Gutachter] [Strehle. "Enabling control of matter at the atomic level: atomic layer deposition and fluorocarbon-based atomic layer etching / Stefano Dallorto ; Gutachter: Adam Schwartzberg, Steffen Strehle ; Betreuer: Ivo W. Rangelow." Ilmenau : TU Ilmenau, 2020. http://nbn-resolving.de/urn:nbn:de:gbv:ilm1-2019000480.

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3

Dallorto, Stefano [Verfasser], Ivo W. [Akademischer Betreuer] Rangelow, Adam [Gutachter] Schwartzberg, and Steffen [Gutachter] Strehle. "Enabling control of matter at the atomic level: atomic layer deposition and fluorocarbon-based atomic layer etching / Stefano Dallorto ; Gutachter: Adam Schwartzberg, Steffen Strehle ; Betreuer: Ivo W. Rangelow." Ilmenau : TU Ilmenau, 2020. http://d-nb.info/120306683X/34.

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4

Tran, Duc-Duy. "Techniques avancées de gravure pour les composants électroniques et optiques en diamant." Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALT115.

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Анотація:

Le diamant suscite depuis quelques années une attention considérable en tant que matériau de choix pour les dispositifs électroniques et optiques avancés. Cependant, pour exploiter pleinement son potentiel, il est essentiel de surmonter des défis majeurs dans les processus de gravure. En effet, si les liaisons carbone-carbone très fortes du diamant lui confèrent des propriétés très intéressantes, elles rendent les procédés de gravure inefficaces ou mal adaptés. Les méthodes de gravure classiques sont inadaptées car elles causent trop de dommages de surface et de subsurface, ce qui affecte les

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5

Pezeril, Maxime. "Développement d'un procédé de gravure par plasma pour les transistors de puissance à base de matériaux III-V." Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALT049.

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Dans le secteur de l’électronique de puissance, le Nitrure de Gallium (GaN) émerge comme un matériau prometteur grâce à ses qualités intrinsèques, en particulier son grand gap et sa tenue à fortes tensions. Les transistors qui l’utilisent, appelés HEMT (High Electron Mobility Transistors), reposent sur une propriété particulière d’une hétérostructure AlGaN/GaN: un canal bi-dimensionnel (2DEG). Les différentes technologies sont encore en développement et font face à différentes problématiques liées aux étapes critiques du procédé de fabrication des composants. L’une de ces étapes est la gravure

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6

Fecko, Peter. "Mikrostruktury mimikující povrch tlapky gekona." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2019. http://www.nusl.cz/ntk/nusl-400722.

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Adhezní schopnosti gekona byly předmětem mnoha studií a inspirací pro vytvoření mnoha napodobenin. Tato práce navrhuje vlastní verzi umělých gekoních struktur ve tvaru mikroskopických pilířů, které by vykazovaly adhezní vlastnosti srovnatelné s tlapkou gekona. Vyrobeny byli struktury z polymeru Parylen C pomocí fotolitografie a technik na leptání křemíku. Dalším cílem bylo různými metodami pro modifikaci povrchu a charakterizaci vytvořených struktur, které určí adhezní síly těchto povrchů, před a po modifikacích.

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7

Chen, Kuan-Chao, and 陳冠超. "Device Fabrications of 2D Material Transistors: Material Growth and Atomic Layer Etching." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/3pz445.

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博士<br>國立臺灣大學<br>電子工程學研究所<br>106<br>In this thesis, we have demonstrated that by using the growth technique of sulfurizing pre-deposited transition metals, large-area transition metal disulfides such as MoS2 and WS2 can be grown on sapphire substrates. Good layer number controllability can be achieved for MoS2 down to single layer by controlling the Mo sputtering times. With sequential transition metal deposition and following sulfurization procedures, a WS2/MoS2/WS2 double hetero-structure can be established in 3-layer 2D crystal thickness. By using the low-power oxygen plasma treatment, a sig

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8

Chu, Tung-Wei, and 屈統威. "The Growth of Large-Area Transition Metal Dichalcogenide Hetero-Structures and the Development of the Atomic Layer Etching." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/75bnb4.

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碩士<br>國立臺灣大學<br>光電工程學研究所<br>105<br>In this thesis, we have demonstrated that large-area molybdenum disulfide (MoS2) can be prepared by sulfurizing the pre-deposited transition metal films. Good layer number controllability up to 10 layers of the MoS2 film is also achieved by controlling the sputtering times of the pre-deposited transition metal films. For the sample with thicker Mo films, although MoS2 films with the layer number larger than 10 can be obtained, clusters of multi-layer 2D crystals covering Mo oxides are obtained for the sample. The results suggest that two growth mechanisms of

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Книги з теми "Atomic Layer Etching"

1

Lill, Thorsten. Atomic Layer Processing: Semiconductor Dry Etching Technology. Wiley & Sons, Limited, John, 2021.

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2

Lill, Thorsten. Atomic Layer Processing: Semiconductor Dry Etching Technology. Wiley & Sons, Incorporated, John, 2021.

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3

Lill, Thorsten. Atomic Layer Processing: Semiconductor Dry Etching Technology. Wiley & Sons, Incorporated, John, 2021.

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4

Lill, Thorsten. Atomic Layer Processing: Semiconductor Dry Etching Technology. Wiley & Sons, Incorporated, John, 2021.

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Частини книг з теми "Atomic Layer Etching"

1

Hossain, Samiha, Oktay H. Gokce, and N. M. Ravindra. "Atomic Layer Deposition and Atomic Layer Etching—An Overview of Selective Processes." In TMS 2021 150th Annual Meeting & Exhibition Supplemental Proceedings. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-65261-6_20.

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2

Yue, Zhihao, Honglie Shen, Ye Jiang, and Yahui Teng. "Antireflective Silicon Nanostructures Fabricated by Cheap Chemical Etchant and Coated by Atomic Layer Deposited Al2O3Layer." In EPD Congress 2013. John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118658468.ch28.

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3

"Atomic Layer Etching." In Encyclopedia of Plasma Technology. CRC Press, 2016. http://dx.doi.org/10.1081/e-eplt-120049598.

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4

"Atomic Layer Etching: Directional." In Encyclopedia of Plasma Technology. CRC Press, 2016. http://dx.doi.org/10.1081/e-eplt-120053939.

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5

Bihun, Roman, and Bohdan Koman. "NANOSCALE METAL FILM ELECTRONICS." In Traditions and new scientific strategies in the context of global transformation of society. Publishing House “Baltija Publishing”, 2024. http://dx.doi.org/10.30525/978-9934-26-406-1-1.

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The purpose of work is the development of technique for the deposition of nanoscale metal condensates of fine-crystalline structure of Au, Ag, Cu and transition (Mn, Hi, Pd and Cr) metals on the surface of amorphous glass or carbon substrate, and such surfaces pre-coated with wetting weakly conductive underlayers of Ge, Sb or Si, with mass thicknesses up to 8 nm.With predicted, controlled structure and electrophysical properties of metal films by use the combination of "quench deposition" technology and wetting underlayers with subsequent thermal stabilization in the interval of the first temp

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Тези доповідей конференцій з теми "Atomic Layer Etching"

1

Inoue, Naoki, Junji Sano, Takuo Kikuchi, et al. "Atomic layer etching process application to TaO hard-mask etching for next-generation EUV (Extreme-Ultraviolet) photomask fabrication." In Photomask Technology 2024, edited by Lawrence S. Melvin and Seong-Sue Kim. SPIE, 2024. http://dx.doi.org/10.1117/12.3034284.

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2

Ha, Heeju, Yongjae Kim, Minsung Jeon, and Heeyeop Chae. "Plasma atomic layer etching of molybdenum with surface fluorination for next-generation interconnect." In Advanced Etch Technology and Process Integration for Nanopatterning XIV, edited by Efrain Altamirano-Sánchez and Nihar Mohanty. SPIE, 2025. https://doi.org/10.1117/12.3050967.

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3

Meng, Xiaoxia, Chao Wang, Xianxiu Qiu, and Junqing Zhou. "Self-Limited Behavior Study on Dielectric Quasi-Atomic Layer Etching for Selectivity Achievement." In 2025 Conference of Science and Technology of Integrated Circuits (CSTIC). IEEE, 2025. https://doi.org/10.1109/cstic64481.2025.11017795.

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4

Du, Fangzhou, Yang Jiang, Ziyang Wang, Xinyi Tang, Qing Wang, and Hongyu Yu. "An Atomic Layer Etching Technique for MOCVD in-Situ SiN_x." In 2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, 2025. https://doi.org/10.1109/edtm61175.2025.11040653.

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5

Tang, Xinyi, Honghao Lu, Chun Fu, et al. "The Atomic Layer Etching Technique with Low Damage for p-GaN/AlGaN/GaN Structure." In 2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, 2025. https://doi.org/10.1109/edtm61175.2025.11040505.

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6

Sundqvist, Jonas, Asif Muhammad, Intu Sharma, et al. "Atomic layer etching pitch splitting (APS™): a new alternative to self-aligned double patterning." In Advanced Etch Technology and Process Integration for Nanopatterning XIV, edited by Efrain Altamirano-Sánchez and Nihar Mohanty. SPIE, 2025. https://doi.org/10.1117/12.3051412.

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7

Hahn, Seung Ho, Wooyoung Kim, Seongmin Son, et al. "Development of Wafer-Level Wet Atomic Layer Etching Process Platform for Cu Surface Topography Control in Hybrid Bonding Applications." In 2025 IEEE 75th Electronic Components and Technology Conference (ECTC). IEEE, 2025. https://doi.org/10.1109/ectc51687.2025.00098.

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8

Stabentheiner, M., D. Tilly, T. Schinnerl, et al. "Identification and Characterization of Conductive Dislocations in p-GaN/AlGaN/GaN Heterojunctions on GaN-on-Si Substrates." In ISTFA 2024. ASM International, 2024. http://dx.doi.org/10.31399/asm.cp.istfa2024p0146.

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Abstract We present a study of dislocation conductivity under forward bias in p-GaN/AlGaN/GaN heterojunctions on a GaN-on-Si substrate, which are part of every p-GaN HEMT structure. Conductive atomic force microscopy (C-AFM) is combined with structural analysis by scanning transmission electron microscopy (STEM) and defect selective etching (DSE). The density of conductive TDs was found to be 5 × 106 cm-2, using semi-automatic measurements to gather larger statistics on a delayered HEMT sample. IV measurements show a shift in turn-on voltage at the leakage positions. To characterize the type o

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9

Agarwal, A., and M. J. Kushner. "Plasma atomic layer etching." In The 33rd IEEE International Conference on Plasma Science, 2006. ICOPS 2006. IEEE Conference Record - Abstracts. IEEE, 2006. http://dx.doi.org/10.1109/plasma.2006.1707342.

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10

Ghazaryan, Lilit, Ernst-Bernhard Kley, Andreas Tünnermann, and Adriana Szeghalmi. "Nanoporous SiO2made by atomic layer deposition and atomic layer etching." In SPIE Optical Systems Design, edited by Michel Lequime, H. Angus Macleod, and Detlev Ristau. SPIE, 2015. http://dx.doi.org/10.1117/12.2192972.

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Звіти організацій з теми "Atomic Layer Etching"

1

Economou, Demetre J., and Vincent M. Donnelly. Pulsed Plasma with Synchronous Boundary Voltage for Rapid Atomic Layer Etching. Office of Scientific and Technical Information (OSTI), 2014. http://dx.doi.org/10.2172/1130983.

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