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Автор: Grafiati

Опубліковано: 10 грудня 2022

Оновлено: 28 січня 2023

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1

Miller, M. K. "Atom Probe Tomography Of Interfaces." Microscopy and Microanalysis 5, S2 (August 1999): 118–19. http://dx.doi.org/10.1017/s143192760001391x.

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Анотація:

The technique of atom probe tomography (APT) enables the x, y, and z coordinates and the elemental identities of the atoms in a small volume to be determined at the atomic level. Therefore, the APT technique may be used to characterize solute segregation to interfaces and precipitation in terms of concentration gradients and precipitate morphology. This type of information may be used to optimize the design of alloys.The material that was used to illustrate the capabilities of atom probe tomography is a complex polycrystalline nickel-based superalloy, Alloy 718. The composition of this commercial superalloy is Ni- 3.2 at. % Nb, 0.96% Al, 1.15% Ti, 20.3% Fe, 21.8% Cr, 0.26% Co, 1.8% Mo, 0.16% Mn, 0.21% Si and 0.26% C. The material was characterized after a heat treatment oM h at 1038°C + 8 h at 870°C + 500 h at 600°C. Previous atom probe field ion microscopy characterizations of this material has demonstrated that there is no intragranular precipitation after the anneal at 1038°C.

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2

Bagot, P. A., T. Li, E. Tsang, G. Smith, and M. P. Moody. "Atom Probe Tomography Characterization of Catalyst Nanoparticles." Microscopy and Microanalysis 19, S2 (August 2013): 1018–19. http://dx.doi.org/10.1017/s1431927613007083.

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3

Thompson, G. B., H. L. Fraser, and M. K. Miller. "Atom Probe Tomography Characterization of Multilayer Films." Microscopy and Microanalysis 9, S02 (July 21, 2003): 574–75. http://dx.doi.org/10.1017/s1431927603442876.

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4

Miller, M. K., and E. A. Kenik. "Atom Probe Tomography: A Technique for Nanoscale Characterization." Microscopy and Microanalysis 10, no. 3 (June 2004): 336–41. http://dx.doi.org/10.1017/s1431927604040577.

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Atom probe tomography is a technique for the nanoscale characterization of microstructural features. Analytical techniques have been developed to estimate the size, composition, and other parameters of features as small as 1 nm from the atom probe tomography data. These methods are outlined and illustrated with examples of yttrium-, titanium-, and oxygen-enriched particles in a mechanically alloyed, oxide-dispersion-strengthened steel.

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5

Xiong, Xiangyuan, and Matthew Weyland. "Microstructural Characterization of an Al-Li-Mg-Cu Alloy by Correlative Electron Tomography and Atom Probe Tomography." Microscopy and Microanalysis 20, no. 4 (May 12, 2014): 1022–28. http://dx.doi.org/10.1017/s1431927614000798.

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AbstractCorrelative electron tomography and atom probe tomography have been carried out successfully on the same region of a commercial 8090 aluminum alloy (Al-Li-Mg-Cu). The combination of the two techniques allows accurate geometric reconstruction of the atom probe tomography data verified by crystallographic information retrieved from the reconstruction. Quantitative analysis of the precipitate phase compositions and volume fractions of each phase have been obtained from the atom probe tomography and electron tomography at various scales, showing strong agreement between both techniques.

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6

Amouyal, Yaron, and Guido Schmitz. "Atom probe tomography—A cornerstone in materials characterization." MRS Bulletin 41, no. 1 (January 2016): 13–18. http://dx.doi.org/10.1557/mrs.2015.313.

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7

Miller, M. K., and E. A. Kenik. "Atom Probe Tomography: A Technique for Nanoscale Characterization." Microscopy and Microanalysis 8, S02 (August 2002): 1126–27. http://dx.doi.org/10.1017/s1431927602103709.

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8

Pfeiffer, Björn, Torben Erichsen, Eike Epler, Cynthia A. Volkert, Piet Trompenaars, and Carsten Nowak. "Characterization of Nanoporous Materials with Atom Probe Tomography." Microscopy and Microanalysis 21, no. 3 (May 20, 2015): 557–63. http://dx.doi.org/10.1017/s1431927615000501.

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AbstractA method to characterize open-cell nanoporous materials with atom probe tomography (APT) has been developed. For this, open-cell nanoporous gold with pore diameters of around 50 nm was used as a model system, and filled by electron beam-induced deposition (EBID) to obtain a compact material. Two different EBID precursors were successfully tested—dicobalt octacarbonyl [Co2(CO)8] and diiron nonacarbonyl [Fe2(CO)9]. Penetration and filling depth are sufficient for focused ion beam-based APT sample preparation. With this approach, stable APT analysis of the nanoporous material can be performed. Reconstruction reveals the composition of the deposited precursor and the nanoporous material, as well as chemical information of the interfaces between them. Thus, it is shown that, using an appropriate EBID process, local chemical information in three dimensions with sub-nanometer resolution can be obtained from nanoporous materials using APT.

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9

Martin, Andrew J., Ajay Kumar Kambham, and Ahmad D. Katnani. "Advantages and Challenges of 3-D Atom Probe Tomography Characterization of FinFETs." EDFA Technical Articles 19, no. 2 (May 1, 2017): 22–30. http://dx.doi.org/10.31399/asm.edfa.2017-2.p022.

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Анотація:

Abstract This article provides an overview of atom probe tomography (APT) and its use in semiconductor FA and new product development. It discusses the basic components in an atom probe, the making of APT tips, and the general approach for data collection and reconstruction. It also includes a case study in which 3D atom probe techniques are used to map dopant profiles and identify defects in the source-drain region of SiGe FinFET transistors.

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10

Kelly, Thomas F., Osamu Nishikawa, J. A. Panitz, and Ty J. Prosa. "Prospects for Nanobiology with Atom-Probe Tomography." MRS Bulletin 34, no. 10 (October 2009): 744–50. http://dx.doi.org/10.1557/mrs2009.249.

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AbstractThe merits of atom-probe tomography (APT) of inorganic materials are well established, as described in this volume. However, one of the long-held aspirations of atom-probe scientists, structural and chemical characterization of organic and biological materials at near-atomic resolution, has yet to be fully realized. A few proof-of-concept type investigations have shown that APT of organic materials is feasible, but a number of challenges still exist with regard to specimen preparation and conversion of raw time-of-flight mass spectrometry data into a three-dimensional map of ions containing structural and chemical information at an acceptable resolution. Recent research aided by hardware improvements and specimen preparation advances has made some progress toward this goal. This article reviews the historical developments in this field, presents some recent results, and considers what life science researchers might expect from this technology.

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11

Pfeiffer, Björn, Johannes Maier, Jonas Arlt, and Carsten Nowak. "In Situ Atom Probe Deintercalation of Lithium-Manganese-Oxide." Microscopy and Microanalysis 23, no. 2 (January 30, 2017): 314–20. http://dx.doi.org/10.1017/s1431927616012691.

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AbstractAtom probe tomography is routinely used for the characterization of materials microstructures, usually assuming that the microstructure is unaltered by the analysis. When analyzing ionic conductors, however, gradients in the chemical potential and the electric field penetrating dielectric atom probe specimens can cause significant ionic mobility. Although ionic mobility is undesirable when aiming for materials characterization, it offers a strategy to manipulate materials directly in situ in the atom probe. Here, we present experimental results on the analysis of the ionic conductor lithium-manganese-oxide with different atom probe techniques. We demonstrate that, at a temperature of 30 K, characterization of the materials microstructure is possible without measurable Li mobility. Also, we show that at 298 K the material can be deintercalated, in situ in the atom probe, without changing the manganese-oxide host structure. Combining in situ atom probe deintercalation and subsequent conventional characterization, we demonstrate a new methodological approach to study ionic conductors even in early stages of deintercalation.

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12

La Fontaine, Alexandre, Sandra Piazolo, Patrick Trimby, Limei Yang, and Julie M. Cairney. "Laser-Assisted Atom Probe Tomography of Deformed Minerals: A Zircon Case Study." Microscopy and Microanalysis 23, no. 2 (January 30, 2017): 404–13. http://dx.doi.org/10.1017/s1431927616012745.

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AbstractThe application of atom probe tomography to the study of minerals is a rapidly growing area. Picosecond-pulsed, ultraviolet laser (UV-355 nm) assisted atom probe tomography has been used to analyze trace element mobility within dislocations and low-angle boundaries in plastically deformed specimens of the nonconductive mineral zircon (ZrSiO4), a key material to date the earth’s geological events. Here we discuss important experimental aspects inherent in the atom probe tomography investigation of this important mineral, providing insights into the challenges in atom probe tomography characterization of minerals as a whole. We studied the influence of atom probe tomography analysis parameters on features of the mass spectra, such as the thermal tail, as well as the overall data quality. Three zircon samples with different uranium and lead content were analyzed, and particular attention was paid to ion identification in the mass spectra and detection limits of the key trace elements, lead and uranium. We also discuss the correlative use of electron backscattered diffraction in a scanning electron microscope to map the deformation in the zircon grains, and the combined use of transmission Kikuchi diffraction and focused ion beam sample preparation to assist preparation of the final atom probe tip.

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13

Nandasiri, M. I., N. Madaan, A. Devaraj, J. Bao, Z. Xu, T. Varga, V. Shutthanandan, and S. Thevuthasan. "Atom Probe Tomography Characterization of Engineered Oxide Multilayered Structures." Microscopy and Microanalysis 21, S3 (August 2015): 845–46. http://dx.doi.org/10.1017/s1431927615005024.

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14

Larson, D. J., P. F. Ladwig, Y. A. Chang, R. L. Martens, R. M. Ulfig, and T. F. Kelly. "Nanoscale Characterization of Magnetic Multilayers with Atom Probe Tomography." Microscopy and Microanalysis 10, S02 (August 2004): 518–19. http://dx.doi.org/10.1017/s1431927604884629.

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15

Larde, R., J. Bran, M. Jean, and J. M. Le Breton. "Nanoscale characterization of powder materials by atom probe tomography." Powder Technology 208, no. 2 (March 2011): 260–65. http://dx.doi.org/10.1016/j.powtec.2010.08.014.

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16

Miller, Michael K. "Atom probe tomography characterization of solute segregation to dislocations." Microscopy Research and Technique 69, no. 5 (2006): 359–65. http://dx.doi.org/10.1002/jemt.20291.

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17

Lauhon, Lincoln J., Praneet Adusumilli, Paul Ronsheim, Philip L. Flaitz, and Dan Lawrence. "Atom-Probe Tomography of Semiconductor Materials and Device Structures." MRS Bulletin 34, no. 10 (October 2009): 738–43. http://dx.doi.org/10.1557/mrs2009.248.

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Анотація:

AbstractThe development of laser-assisted atom-probe tomography (APT) analysis and new sample preparation approaches have led to significant advances in the characterization of semiconductor materials and device structures by APT. The high chemical sensitivity and three-dimensional spatial resolution of APT makes it uniquely capable of addressing challenges resulting from the continued shrinking of semiconductor device dimensions, the integration of new materials and interfaces, and the optimization of evolving fabrication processes. Particularly pressing concerns include the variability in device performance due to discrete impurity atom distributions, the phase and interface stability in contacts and gate dielectrics, and the validation of simulations of impurity diffusion. This overview of APT of semiconductors features research on metal-silicide contact formation and phase control, silicon field-effect transistors, and silicon and germanium nanowires. Work on silicide contacts to silicon is reviewed to demonstrate impurity characterization in small volumes and indicate how APT can facilitate defect mitigation and process optimization. Impurity contour analysis of a pFET semiconductor demonstrates the site-specificity that is achievable with current APTs and highlights complex device challenges that can be uniquely addressed. Finally, research on semiconducting nanowires and nanowire heterostructures demonstrates the potential for analysis of materials derived from bottom-up synthesis methods.

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18

Inoue, Koji, Ajay Kumar Kambham, Dominique Mangelinck, Dan Lawrence, and David J. Larson. "Atom-Probe-Tomographic Studies on Silicon-Based Semiconductor Devices." Microscopy Today 20, no. 5 (September 2012): 38–44. http://dx.doi.org/10.1017/s1551929512000740.

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Анотація:

The development of laser-assisted atom probe tomography (APT) and specimen preparation techniques using a focused ion beam equipped with high-resolution scanning electron microscopy (SEM) has significantly advanced the characterization of semiconductor devices by APT. The capability of APT to map out elements in devices at the atomic scale with high sensitivity meets the characterization requirements of semiconductor devices such as the determination of elemental distributions for each device region.

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19

Ohkubo, Tadakatsu, Yimeng Chen, Masaya Kodzuka, and Kazuhiro Hono. "Nanoscale Characterization of Ceramics by Laser Assisted Atom Probe Tomography." Materia Japan 50, no. 9 (2011): 397–403. http://dx.doi.org/10.2320/materia.50.397.

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20

Mazumder, Baishakhi, Michele Esposto, Ting H. Hung, Tom Mates, Siddharth Rajan, and James S. Speck. "Characterization of a dielectric/GaN system using atom probe tomography." Applied Physics Letters 103, no. 15 (October 7, 2013): 151601. http://dx.doi.org/10.1063/1.4824211.

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21

Lozano-Perez, Sergio, David W. Saxey, Takuyo Yamada, and Takumi Terachi. "Atom-probe tomography characterization of the oxidation of stainless steel." Scripta Materialia 62, no. 11 (June 2010): 855–58. http://dx.doi.org/10.1016/j.scriptamat.2010.02.021.

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22

Wang, Jing, Mychailo B. Toloczko, Victor N. Voyevodin, Viktor V. Bryk, Oleg V. Borodin, Valentyn V. Mel'nychenko, Alexandr S. Kalchenko, Frank A. Garner, and Lin Shao. "Atom probe tomography characterization of high-dose ion irradiated MA957." Journal of Nuclear Materials 545 (March 2021): 152528. http://dx.doi.org/10.1016/j.jnucmat.2020.152528.

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23

Miller, M. K., K. F. Russell, M. A. Sokolov, and R. K. Nanstad. "Atom probe tomography characterization of radiation-sensitive KS-01 weld." Journal of Nuclear Materials 320, no. 3 (August 2003): 177–83. http://dx.doi.org/10.1016/s0022-3115(03)00108-9.

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24

Moody, Michael P., Baptiste Gault, Leigh T. Stephenson, Ross K. W. Marceau, Rebecca C. Powles, Anna V. Ceguerra, Andrew J. Breen, and Simon P. Ringer. "Lattice Rectification in Atom Probe Tomography: Toward True Three-Dimensional Atomic Microscopy." Microscopy and Microanalysis 17, no. 2 (March 8, 2011): 226–39. http://dx.doi.org/10.1017/s1431927610094535.

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AbstractAtom probe tomography (APT) represents a significant step toward atomic resolution microscopy, analytically imaging individual atoms with highly accurate, though imperfect, chemical identity and three-dimensional (3D) positional information. Here, a technique to retrieve crystallographic information from raw APT data and restore the lattice-specific atomic configuration of the original specimen is presented. This lattice rectification technique has been applied to a pure metal, W, and then to the analysis of a multicomponent Al alloy. Significantly, the atoms are located to their true lattice sites not by an averaging, but by triangulation of each particular atom detected in the 3D atom-by-atom reconstruction. Lattice rectification of raw APT reconstruction provides unprecedented detail as to the fundamental solute hierarchy of the solid solution. Atomic clustering has been recognized as important in affecting alloy behavior, such as for the Al-1.1Cu-1.7Mg (at. %) investigated here, which exhibits a remarkable rapid hardening reaction during the early stages of aging, linked to clustering of solutes. The technique has enabled lattice-site and species-specific radial distribution functions, nearest-neighbor analyses, and short-range order parameters, and we demonstrate a characterization of solute-clustering with unmatched sensitivity and precision.

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25

Schreiber, D. K., M. J. Olszta, D. W. Saxey, K. Kruska, K. L. Moore, S. Lozano-Perez, and S. M. Bruemmer. "Examinations of Oxidation and Sulfidation of Grain Boundaries in Alloy 600 Exposed to Simulated Pressurized Water Reactor Primary Water." Microscopy and Microanalysis 19, no. 3 (April 17, 2013): 676–87. http://dx.doi.org/10.1017/s1431927613000421.

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AbstractHigh-resolution characterizations of intergranular attack in alloy 600 (Ni-17Cr-9Fe) exposed to 325°C simulated pressurized water reactor primary water have been conducted using a combination of scanning electron microscopy, NanoSIMS, analytical transmission electron microscopy, and atom probe tomography. The intergranular attack exhibited a two-stage microstructure that consisted of continuous corrosion/oxidation to a depth of ~200 nm from the surface followed by discrete Cr-rich sulfides to a further depth of ~500 nm. The continuous oxidation region contained primarily nanocrystalline MO-structure oxide particles and ended at Ni-rich, Cr-depleted grain boundaries with spaced CrS precipitates. Three-dimensional characterization of the sulfidized region using site-specific atom probe tomography revealed extraordinary grain boundary composition changes, including total depletion of Cr across a several nm wide dealloyed zone as a result of grain boundary migration.

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26

Rice, Katherine P., Yimeng Chen, Ty J. Prosa, and David J. Larson. "Implementing Transmission Electron Backscatter Diffraction for Atom Probe Tomography." Microscopy and Microanalysis 22, no. 3 (June 2016): 583–88. http://dx.doi.org/10.1017/s1431927616011296.

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AbstractThere are advantages to performing transmission electron backscattering diffraction (tEBSD) in conjunction with focused ion beam-based specimen preparation for atom probe tomography (APT). Although tEBSD allows users to identify the position and character of grain boundaries, which can then be combined with APT to provide full chemical and orientation characterization of grain boundaries, tEBSD can also provide imaging information that improves the APT specimen preparation process by insuring proper placement of the targeted grain boundary within an APT specimen. In this report we discuss sample tilt angles, ion beam milling energies, and other considerations to optimize Kikuchi diffraction pattern quality for the APT specimen geometry. Coordinated specimen preparation and analysis of a grain boundary in a Ni-based Inconel 600 alloy is used to illustrate the approach revealing a 50° misorientation and trace element segregation to the grain boundary.

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27

Bennett, Roland, Andrew Proudian, and Jeramy Zimmerman. "A Machine Learning Approach to Cluster Characterization for Atom Probe Tomography." Microscopy and Microanalysis 27, S1 (July 30, 2021): 408–11. http://dx.doi.org/10.1017/s1431927621001987.

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28

Ladutkin, D., C. Bruch, C. Günther, H. Aboulfadl, and F. Mücklich. "Characterization of an Albite Inclusion Containing MgO by Atom Probe Tomography." Practical Metallography 50, no. 9 (September 9, 2013): 607–15. http://dx.doi.org/10.3139/147.110262.

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29

Li, Y. J., P. Choi, C. Borchers, Y. Z. Chen, S. Goto, D. Raabe, and R. Kirchheim. "Atom probe tomography characterization of heavily cold drawn pearlitic steel wire." Ultramicroscopy 111, no. 6 (May 2011): 628–32. http://dx.doi.org/10.1016/j.ultramic.2010.11.010.

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30

Liu, Tian, Elaina R. Reese, Iman Ghamarian, and Emmanuelle A. Marquis. "Atom probe tomography characterization of ion and neutron irradiated Alloy 800H." Journal of Nuclear Materials 543 (January 2021): 152598. http://dx.doi.org/10.1016/j.jnucmat.2020.152598.

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31

Müller, M., D. W. Saxey, A. Cerezo, and G. D. W. Smith. "Nanoscale characterization of compound semiconductors using laser-pulsed atom probe tomography." Journal of Physics: Conference Series 209 (February 1, 2010): 012026. http://dx.doi.org/10.1088/1742-6596/209/1/012026.

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32

Miller, M. K. "Atom probe tomography characterization of solute segregation to dislocations and interfaces." Journal of Materials Science 41, no. 23 (December 2006): 7808–13. http://dx.doi.org/10.1007/s10853-006-0518-5.

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33

Shimizu, Y., H. Takamizawa, Y. Kawamura, M. Uematsu, T. Toyama, K. Inoue, E. E. Haller, K. M. Itoh, and Y. Nagai. "Atomic-scale characterization of germanium isotopic multilayers by atom probe tomography." Journal of Applied Physics 113, no. 2 (January 14, 2013): 026101. http://dx.doi.org/10.1063/1.4773675.

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34

Pareige, Philippe, Bertrand Radiguet, and Cristelle Pareige. "Nuclear Materials Characterization by Tomographic Atom Probe." EPJ Web of Conferences 51 (2013): 03004. http://dx.doi.org/10.1051/epjconf/20135103004.

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35

Gorman, Brian P., Andrew G. Norman, and Yanfa Yan. "Atom Probe Analysis of III–V and Si-Based Semiconductor Photovoltaic Structures." Microscopy and Microanalysis 13, no. 6 (November 14, 2007): 493–502. http://dx.doi.org/10.1017/s1431927607070894.

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Анотація:

The applicability of atom probe to the characterization of photovoltaic devices is presented with special emphasis on high efficiency III–V and low cost ITO/a-Si:H heterojunction cells. Laser pulsed atom probe is shown to enable subnanometer chemical and structural depth profiling of interfaces in III–V heterojunction cells. Hydrogen, oxygen, and phosphorus chemical profiling in 5-nm-thick a-Si heterojunction cells is also illustrated, along with compositional analysis of the ITO/a-Si interface. Detection limits of atom probe tomography useful to semiconductor devices are also discussed. Gaining information about interfacial abruptness, roughness, and dopant profiles will allow for the determination of semiconductor conductivity, junction depletion widths, and ultimately photocurrent collection efficiencies and fill factors.

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36

Gorman, Brian P., David Diercks, Norman Salmon, Eric Stach, Gonzalo Amador, and Cheryl Hartfield. "Hardware and Techniques for Cross- Correlative TEM and Atom Probe Analysis." Microscopy Today 16, no. 4 (July 2008): 42–47. http://dx.doi.org/10.1017/s1551929500059782.

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Анотація:

Atom probe tomography has primarily been used for atomic scale characterization of high electrical conductivity materials. A high electrical field applied to needle-shaped specimens evaporates surface atoms, and a time of flight measurement determines each atom's identity. A 2-dimensional detector determines each atom's original position on the specimen. When repeated successively over many surface monolayers, the original specimen can be reconstructed into a 3-dimensional representation. In order to have an accurate 3-D reconstruction of the original, the field required for atomic evaporation must be known a-priori. For many metallic materials, this evaporation field is well characterized, and 3-D reconstructions can be achieved with reasonable accuracy.

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37

Licata, Olivia G., and Baishakhi Mazumder. "Application of Atom Probe Tomography for Advancing GaN Based Technology." International Journal of High Speed Electronics and Systems 28, no. 01n02 (March 2019): 1940005. http://dx.doi.org/10.1142/s0129156419400056.

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Atom Probe Tomography (APT) has emerged as a stand-alone technique for material characterization at the sub-nanometer level, with unrivaled spatial resolution, coupled with three-dimensional atomic mapping, and equal sensitivity of all elements. Over the past decade, APT has proven to be a valuable tool in advancing the understanding and design of GaN-based semiconductor technology, by revealing correlations between atomic-level structure chemistry and device performance. The uniqueness of APT is exemplified by its ability to directly analyze nanoscale features within a commercial device. In this review, the quantitative requirements for advancement in GaN-based device metrology are defined as accurate measurement of composition, structural inhomogeneities, elemental incorporation within thin interlayers, and quantification of dopants and impurities. These are bolstered by a review of recent advances in GaN-based devices, realized through APT. The rich compositional and spatial data provided by APT is necessary for the continued advancement of III-V semiconductor technology.

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38

Takamizawa, Hisashi, Katsuya Hoshi, Yasuo Shimizu, Fumiko Yano, Koji Inoue, Shinji Nagata, Tatsuo Shikama, and Yasuyoshi Nagai. "Three-Dimensional Characterization of Deuterium Implanted in Silicon Using Atom Probe Tomography." Applied Physics Express 6, no. 6 (June 1, 2013): 066602. http://dx.doi.org/10.7567/apex.6.066602.

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39

Gemma, Ryota, Yanshan Lu, Sascha Seils, Torben Boll, and Kohta Asano. "Chemical characterization of Mg0.25Mn0.75-H(D) nanocomposites by Atom Probe Tomography (APT)." Journal of Alloys and Compounds 896 (March 2022): 163015. http://dx.doi.org/10.1016/j.jallcom.2021.163015.

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40

Barroo, Cédric, Andrew P. Magyar, Austin J. Akey, and David C. Bell. "Preparation and Characterization of Eu-Doped Diamond Samples by Atom Probe Tomography." Microscopy and Microanalysis 22, S3 (July 2016): 694–95. http://dx.doi.org/10.1017/s1431927616004323.

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41

Raznitsyn, O. A., A. A. Lukyanchuk, A. S. Shutov, S. V. Rogozhkin, and A. A. Aleev. "Optimization of Material Analysis Conditions for Laser-Assisted Atom Probe Tomography Characterization." Journal of Analytical Chemistry 72, no. 14 (December 2017): 1404–10. http://dx.doi.org/10.1134/s1061934817140118.

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42

Maier, Johannes, Björn Pfeiffer, Cynthia A. Volkert, and Carsten Nowak. "Three-Dimensional Microstructural Characterization of Lithium Manganese Oxide with Atom Probe Tomography." Energy Technology 4, no. 12 (September 15, 2016): 1565–74. http://dx.doi.org/10.1002/ente.201600210.

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43

Jenkins, Benjamin M., Frédéric Danoix, Mohamed Gouné, Paul A. J. Bagot, Zirong Peng, Michael P. Moody, and Baptiste Gault. "Reflections on the Analysis of Interfaces and Grain Boundaries by Atom Probe Tomography." Microscopy and Microanalysis 26, no. 2 (March 18, 2020): 247–57. http://dx.doi.org/10.1017/s1431927620000197.

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Анотація:

AbstractInterfaces play critical roles in materials and are usually both structurally and compositionally complex microstructural features. The precise characterization of their nature in three-dimensions at the atomic scale is one of the grand challenges for microscopy and microanalysis, as this information is crucial to establish structure–property relationships. Atom probe tomography is well suited to analyzing the chemistry of interfaces at the nanoscale. However, optimizing such microanalysis of interfaces requires great care in the implementation across all aspects of the technique from specimen preparation to data analysis and ultimately the interpretation of this information. This article provides critical perspectives on key aspects pertaining to spatial resolution limits and the issues with the compositional analysis that can limit the quantification of interface measurements. Here, we use the example of grain boundaries in steels; however, the results are applicable for the characterization of grain boundaries and transformation interfaces in a very wide range of industrially relevant engineering materials.

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44

Kim, Yoon-Jun, and David N. Seidman. "Atom-Probe Tomographic Analyses of Hydrogen Interstitial Atoms in Ultrahigh Purity Niobium." Microscopy and Microanalysis 21, no. 3 (April 21, 2015): 535–43. http://dx.doi.org/10.1017/s143192761500032x.

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Анотація:

AbstractAtomic-scale characterization of hydrogen and formation of niobium hydrides, using ultraviolet (wavelength=355 nm) picosecond laser-assisted local-electrode atom-probe tomography, was performed for ultrahigh purity niobium utilizing different laser pulse energies, 10 or 50 pJ/pulse or voltage pulsing. At 50 pJ/pulse, hydrogen atoms migrate onto the 110 and 111 poles as a result of stimulated surface diffusion, whereas they are immobile for <10 pJ/pulse or for voltage pulsing. Accordingly, the highest concentrations of H and NbH were obtained at 50 pJ/pulse. This is attributed to the thermal energy of the laser pulses being transferred to pure niobium specimens. Therefore, we examined the effects of the laser pulse energy being increased systematically from 1 to 20 pJ/pulse and then decreasing it from 20 to 1 pJ/pulse. The concentrations of H, H2, and NbH and the atomic concentration ratios H2/H, NbH/Nb, and Nb3+/Nb2+ were calculated with respect to the systematically changing laser pulse energies. The atomic concentration ratios H2/H and NbH/Nb are greater when decreasing the laser pulse energy than when increasing it, because the higher residual thermal energy after decreasing the laser pulse energy increases the mobility of H atoms by supplying sufficient thermal energy to form H2 or NbH.

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45

Hu, Rong, Jing Xue, Xingping Wu, Yanbo Zhang, Huilong Zhu, and Gang Sha. "Atom Probe Tomography Characterization of Dopant Distributions in Si FinFET: Challenges and Solutions." Microscopy and Microanalysis 26, no. 1 (November 22, 2019): 36–45. http://dx.doi.org/10.1017/s1431927619015137.

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Анотація:

AbstractAtom probe tomography (APT) has emerged as an important tool in characterizing three-dimensional semiconductor devices. However, the complex structure and hybrid nature of a semiconductor device can pose serious challenges to the accurate measurement of dopants. In particular, local magnification and trajectory aberration observed when analyzing hybrid materials with different evaporation fields can cause severe distortions in reconstructed geometry and uncertainty in local chemistry measurement. To address these challenges, this study systematically investigates the effect of APT sampling directions on the measurement of n-type dopants P and As in an Si fin field-effect transistor (FinFET). We demonstrate that the APT samples made with their Z-axis perpendicular to the center axis of the fin are effective to minimize the negative effects that result from evaporation field differences between the Si fin and SiO2 on reconstruction and achieve improved measurement of dopant distributions. In addition, new insights have been gained regarding the distribution of ion-implanted P and As in the Si FinFET.

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46

Ngamo, M., S. Duguay, P. Pichler, K. Daoud, and P. Pareige. "Characterization of Arsenic segregation at Si/SiO2 interface by 3D atom probe tomography." Thin Solid Films 518, no. 9 (February 2010): 2402–5. http://dx.doi.org/10.1016/j.tsf.2009.08.020.

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47

Kang, J., C. Williams, B. Hosseinkhani, P. E. Rivera Diaz del Castillo, P. A. Bagot, and M. P. Moody. "Atom Probe Tomography Characterization of a White Etching Area in a Bearing Steel." Microscopy and Microanalysis 19, S2 (August 2013): 1016–17. http://dx.doi.org/10.1017/s1431927613007071.

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48

Mazumder, B., X. Liu, U. K. Mishra, and J. S. Speck. "3D Characterization Study of High-k Dielectric on GaN Using Atom Probe Tomography." Microscopy and Microanalysis 19, S2 (August 2013): 1026–27. http://dx.doi.org/10.1017/s1431927613007125.

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49

Lee, J. H., Y. T. Kim, J. J. Kim, S. Y. Lee, and C. G. Park. "3D compositional characterization of Si/SiO2 vertical interface structure by atom probe tomography." Electronic Materials Letters 9, no. 6 (November 2013): 747–50. http://dx.doi.org/10.1007/s13391-013-6002-x.

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50

Samudrala, S., O. Wodo, S. K. Suram, S. Broderick, K. Rajan, and B. Ganapathysubramanian. "A graph-theoretic approach for characterization of precipitates from atom probe tomography data." Computational Materials Science 77 (September 2013): 335–42. http://dx.doi.org/10.1016/j.commatsci.2013.04.038.

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