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Дисертації з теми "Arséniure d'indium"
Abdelslem, Ben Hamida. "Caractérisation électrique et optique de couches GaAs hétéroépitaxiees sur substrat InP et analyse des dispositifs MESFETs fabriques sur ces couches." Lyon, INSA, 1995. http://www.theses.fr/1995ISAL0026.
Повний текст джерелаOptoelectronic integrated circuits (OEICs) are presently developed for law cost and high performance devices in the 1. 3 μm - 1. 55 μm wavelength fiber communication systems. The very mature technology of gallium arsenide makes it highly attractive to combine GaAs electronic devices with lnP optical components on the same chip. The aim of this work is essentially the study of electrical defects influence on GaAs layers grown on lnP and their impact on MESFET devices performances. By using a complete variety of optical and electrical spectroscopy techniques (Photo -luminescence Photo-reflectance, lnfrared absorption and deep level transient sprectroscopy), we were able to give an explanation of the donor compensation mechanism observed on the GaAs/lnP layers if compared to the GaAs/GaAs layers. The compensation effect was shown to be partially due to complex defects involving silicon in acceptor sites. We also emphasized on the correlation between lattice – mismatch dislocations and electrical defects present in the GaAs layers. A detailed electrical characterization of MESFET devices showed the influence of the electrical active defects due to the lattice mismatch on the device performances. We also correlated the concentration of these defects to the buffer layer thickness optimization and to different heat treatments
André, Yamina. "Etude par spectroscopies électroniques de la nitruration de semi-conducteurs III/V GaAs et InP." Clermont-Ferrand 2, 2002. http://www.theses.fr/2002CLF22382.
Повний текст джерелаTachafine, Amina. "Contribution à l'étude des transistors bipolaires à hétéro jonction pour la réalisation d'amplificateurs monolithiques de forte puissance en bande x." Lille 1, 1994. http://www.theses.fr/1994LIL10052.
Повний текст джерелаMiossi, Christophe. "Caractérisation par microscopie électronique en transmission de la croissance et de la relaxation des structures épitaxiales contraintes en compression dans le système InGaAs-InP." Lyon 1, 1995. http://www.theses.fr/1995LYO10268.
Повний текст джерелаMeddeb, Jaafar. "Caractérisation structurale par microscopie électronique en transmission des systèmes à fort désaccord paramétrique : GaAs-Si et GaAs-InP." Lyon 1, 1993. http://www.theses.fr/1993LYO10218.
Повний текст джерелаLefebvre, Éric. "Croissance métamorphique par épitaxie par jets moléculaires et caractérisations physiques pour transistor bipolaire à hétérojonction InP/InGaAs sur GaAs." Lille 1, 2005. https://ori-nuxeo.univ-lille1.fr/nuxeo/site/esupversions/f605bbca-fcf9-41d7-b911-dd5afd32eff9.
Повний текст джерелаRoucher, Vincent. "Etude de HEMT's AlInAs/GaInAs à désertion et à enrichissement pour applications haute fréquence." Lille 1, 2005. https://pepite-depot.univ-lille.fr/RESTREINT/Th_Num/2005/50376-2005-188.pdf.
Повний текст джерелаGautier, Sylvestre. "Etudes expérimentales et modélisation de la diffusion du Be dans des structures épitaxiées III-V." Rouen, 1998. http://www.theses.fr/1998ROUES060.
Повний текст джерелаKhelifi, Wijden. "Selective Growth and Characterization of InAs and InSb Nanostructures." Electronic Thesis or Diss., Université de Lille (2022-....), 2024. http://www.theses.fr/2024ULILN001.
Повний текст джерелаIn the landscape of electronic device fabrication, the semiconductor compounds indium arsenide (InAs) and indium antimonide (InSb) have emerged as materials of significant interest for high-speed telecommunications and infrared optoelectronics. More recently, their excellent electron transport characteristics, characterized by high mobility and strong spin-orbit coupling, render them highly conducive for applications that exploit quantum transport phenomena. However, their deployment is often hampered by the lattice mismatch they possess with conventional III-V substrates, making them defective. This thesis proposes a solution for fabricating good-quality in-plane InAs and InSb nanostructures, using selective area growth by molecular beam epitaxy in SiO2 apertures.A structural and morphological study of InAs and InSb two-dimensional layers and nanowires on GaAs and InP substrates oriented along the [001] and [111] directions has been carried out. The optimization of the growth parameters led to the fabrication of continuous and faceted planar nanostructures with minimized threading defects. These systems were then studied by four-tip scanning tunnelling microscopy in ultra-high vacuum, a technique that eliminates the need for electrode fabrication to characterize the transport properties. The comparison of transport in surface-reconstructed InAs nanowires and core-shell InAs/GaSb nanowires revealed the benefits of embedding the InAs nanowires to significantly increase the electron mobility in the nanowires.Unlike the InAs nanowires, which can be protected by a thin layer of arsenic to preventtheir surface oxidation during their transfer to air, there is no effective protection for InSb.The final part of the thesis therefore focuses on characterizing the deoxidation of InSb (001) and (111) surfaces using a combination of Raman spectroscopy and scanning tunnelling microscopy. This latter study paves the way for subsequent measurements of the transport in InSb nanowires by four-tip scanning tunnelling microscopy.In conclusion, the structural and electronic quality of the InAs and InSb nanowires produced in this work is compatible with the ballistic transport regime. These results lay down the foundations for the fabrication of the more complex III-V structures, highly prized for thedesign of quantum devices
Samnouni, Mohammed. "Fabrication et caractérisation du HEMT InP pour amplification faible bruit THz." Thesis, Lille 1, 2019. http://www.theses.fr/2019LIL1I103.
Повний текст джерелаProgress of III-V technologies are now making it possible to design electronic components operating in the millimeter and sub-millimeter wave range (THz) are facing the needs of the telecommunications and electronics market for various industrial sectors. The technology of InP High Electron Mobility Transistor (HEMT) allowed in recent years a remarkable progress in the realization of integrated circuits at very high frequencies (operating frequency at 1 THz) and low noise. Few world players in microelectronics (none in France) have established performances reaching these THz frequencies. We propose to develop a technology that meets this demand.We propose to develop InAlAs /InGaAs/InAs HEMT with THz cutoff frequency and low noise, mainly for reception-detection THz electronic system. The work will therefore focus on the determination of an optimal epitaxial structure using InAlAs/InGaAs/InAs materials by performing Hall effect measurements of several heterostructures, in order to determine the layer offering a better mobility / electronic charges tradeoff. The modifications of the transistor geometry (gate length, recess size and the spacings of the electrodes of the transistor) made it possible to considerably increase the operating frequency of the transistor. We achieved the characterizations of S-parameters up to 750 GHz and noise up to 110 GHz, in order to validate the technological optimizations
Книги з теми "Arséniure d'indium"
Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications. Taylor & Francis Group, 2023.
Знайти повний текст джерелаAdvanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications. CRC Press, 2021.
Знайти повний текст джерелаMohankumar, N. Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications. Taylor & Francis Group, 2021.
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