Статті в журналах з теми "Anti-ferromagnetic Insulator"
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1
Zhang, Min, Qiya Liu, Ligang Liu, and Tixian Zeng. "Proximity-Induced Magnetism in a Topological Insulator/Half-Metallic Ferromagnetic Thin Film Heterostructure." Coatings 12, no. 6 (May 31, 2022): 750. http://dx.doi.org/10.3390/coatings12060750.
Повний текст джерелаАнотація:
Topological insulator (TI) Bi2Se3 thin films were prepared on half-metallic ferromagnetic La0.7Sr0.3MnO3 thin film by magnetron sputtering, forming a TI/FM heterostructure. The conductivity of Bi2Se3was modified by La0.7Sr0.3MnO3 at high- and low-temperature regions via different mechanisms, which could be explained by the short-range interactions and long-range interaction between ferromagnetic insulator and Bi2Se3 due to the proximity effect. Magnetic and transport measurements prove that the ferromagnetic phase and extra magnetic moment are induced in Bi2Se3 films. The weak anti-localized (WAL) effect was suppressed in Bi2Se3 films, accounting for the magnetism of La0.7Sr0.3MnO3 layers. This work clarifies the special behavior in Bi2Se3/La0.7Sr0.3MnO3 heterojunctions, which provides an effective way to study the magnetic proximity effect of the ferromagnetic phase in topological insulators.
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Mahfouzi, Farzad, and Nicholas Kioussis. "Ferromagnetic Damping/Anti-damping in a Periodic 2D Helical Surface; A Nonequilibrium Keldysh Green Function Approach." SPIN 06, no. 02 (June 2016): 1640009. http://dx.doi.org/10.1142/s2010324716400099.
Повний текст джерелаАнотація:
In this paper, we investigate theoretically the spin–orbit torque (SOT) as well as the Gilbert damping for a two band model of a 2D helical surface state with a ferromagnetic (FM) exchange coupling. We decompose the density matrix into the Fermi sea and Fermi surface components and obtain their contributions to the electronic transport as well as the SOT. Furthermore, we obtain the expression for the Gilbert damping due to the surface state of a 3D topological insulator (TI) and predict its dependence on the direction of the magnetization precession axis.
3
Zhang, J., K. Zhao, X. S. Yang, and Y. Zhao. "Study of magnetic and transport properties of Bi2Se3/FeSe2 bilayer thin films." International Journal of Modern Physics B 35, no. 02 (January 12, 2021): 2150022. http://dx.doi.org/10.1142/s0217979221500223.
Повний текст джерелаАнотація:
Thin films of topological insulator (TI) Bi2Se3 were grown onto the surfaces of FeSe2 layers of different thicknesses on Si (100) substrates by magnetron sputtering, forming bilayer films with smooth surface. Magnetic and transport measurements indicate ferromagnetism in these bilayer samples. Large coercive fields at low-temperatures and a room-temperature magnetic order were observed. Moreover, nonsaturated high-filed linear magnetoresistance (MR) and weak anti-localization effect were found in these bilayer thin films. These results indicate that the bilayer samples could have both strong spin–orbit coupling and ferromagnetic proximity effect, which are the desired features.
4
Sumi, Satoshi, Yuichiro Hirano, Hiroyuki Awano, and Junji Tominaga. "Ferromagnetic Resonance of a [GeTe/Sb2Te3]6/Py Superlattice." Magnetochemistry 7, no. 12 (November 26, 2021): 156. http://dx.doi.org/10.3390/magnetochemistry7120156.
Повний текст джерелаАнотація:
A [GeTe/Sb2Te3] superlattice is known as a topological insulator. It shows magnetic responses such as magneto-optical effect, magneto resistance, magneto capacitance, and so on. We have reported that [GeTe/Sb2Te3] superlattice film has a large spin–orbit interaction using a spin pumping method of a [GeTe/Sb2Te3]/Py superlattice. In this paper, we demonstrate a ST-FMR (spin transfer torque ferromagnetic resonance) of the [GeTe/Sb2Te3]6/Py superlattice, compared with a W/Py bilayer. The superlattice film showed a large resonance signal with a symmetric component. The ratio of symmetric components (S) to anti-symmetric (A) components (S/A) was 1.4, which suggests that the superlattice exhibits a large spin Hall angle. The [GeTe/Sb2Te3] superlattice will be suitable as a hetero-interface material required for high performance spintronics devices in future.
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Yokota, Takeshi, Takaaki Kuribayashi, Takeshi Shundo, Keita Hattori, Yasutoshi Sakakibara, and Manabu Gomi. "Magnetic and Dielectric Properties of a Metal/ Cr2O3/Cr2O3-x/Cr2O3/Semiconductor Capacitor Using Magneto-Electric Materials." Key Engineering Materials 350 (October 2007): 221–24. http://dx.doi.org/10.4028/www.scientific.net/kem.350.221.
Повний текст джерелаАнотація:
We investigated the magnetic and dielectric properties of a metal (Pt)/insulator (Cr2O3)/semiconductor (Si) (MIS) capacitor composed of magneto-electric (ME) materials. The capacitor has anti-ferromagnetic properties and a very small electrically induced magnetic moment. It also shows capacitance-voltage (C-V) properties typical of a Si-MIS capacitor without any hysteresis. By inserting a thin Cr2O3-x layer, the C-V curve has a hysteresis window with a clockwise trace, which indicates that electrons have been injected into the Cr2O3-x layer. These results indicate that this MIS capacitor contains a floating gate and an ME insulating layer in a single system.
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Xie, Hangkai, Fucong Fei, Fenzhen Fang, Bo Chen, Jingwen Guo, Yu Du, Wuyi Qi, et al. "Charge carrier mediation and ferromagnetism induced in MnBi6Te10 magnetic topological insulators by antimony doping." Journal of Physics D: Applied Physics 55, no. 10 (December 6, 2021): 104002. http://dx.doi.org/10.1088/1361-6463/ac3790.
Повний текст джерелаАнотація:
Abstract A new kind of intrinsic magnetic topological insulator (MTI) MnBi2Te4 family has shed light on the observation of novel topological quantum effects such as the quantum anomalous Hall effect (QAHE). However, strong anti-ferromagnetic (AFM) coupling and high carrier concentration in the bulk hinder practical applications. In closely related materials MnBi4Te7 and MnBi6Te10, the interlayer magnetic coupling is greatly suppressed by Bi2Te3 layer intercalation. However, AFM is still the ground state in these compounds. Here, by magnetic and transport measurements, we demonstrate that a Sb substitutional dopant plays a dual role in MnBi6Te10, which can not only adjust the charge carrier type and concentration, but also induces the solid into a ferromagnetic (FM) ground state. The AFM ground state region, which is also close to the charge neutral point, can be found in the phase diagram of Mn(Sb x Bi1−x )6Te10 when x ∼ 0.25. An intrinsic FM-MTI candidate is thus demonstrated, which may take us a step closer to realizing a high-quality and high-temperature QAHE and related topological quantum effects in the future.
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Majumder, Supriyo, Malvika Tripathi, I. Píš, S. Nappini, P. Rajput, S. N. Jha, R. J. Choudhary, and D. M. Phase. "Robust electronic and tunable magnetic states in Sm2 NiMnO6 ferromagnetic insulator." Journal of Physics: Condensed Matter 34, no. 25 (April 20, 2022): 255502. http://dx.doi.org/10.1088/1361-648x/ac62a4.
Повний текст джерелаАнотація:
Abstract Ferromagnetic insulators (FM-Is) are the materials of interest for the new generation quantum electronic applications. Here, we have investigated the physical observables depicting FM-I ground states in epitaxial Sm2NiMnO6 (SNMO) double perovskite thin films fabricated under different conditions to realize the different level of Ni/Mn anti-site disorders (ASDs). The presence of ASDs immensely influence the characteristic magnetic and anisotropy behaviors in SNMO system by introducing short scale antiferromagnetic interactions in predominant long range FM ordered host matrix. Charge disproportion between cation sites, in the form of Ni2+ + Mn4+ → Ni3+ + Mn3+, causes mixed valency in both Ni and Mn species, which is found insensitive to ASD concentrations. Temperature dependent photo emission, photo absorption measurements duly combined with cluster model configuration interaction simulations, suggest that the eigenstates of Ni and Mn cations can be satisfactorily described as a linear combination of the unscreened d n and screened d n + 1 L ̲ ( L ̲ : O 2p hole) states. The electronic structure across the Fermi level (E F) exhibits closely spaced Ni 3d, Mn 3d and O 2p states. From occupied and unoccupied bands, estimated values of the Coulomb repulsion energy (U) and ligand to metal charge transfer energy (Δ), indicate charge transfer insulating nature, where remarkable modification in Ni/Mn 3d—O 2p hybridization takes place across the FM transition temperature. Existence of ASD broadens the Ni, Mn 3d spectral features, whereas the spectral positions are found to be unaltered. Hereby, present work demonstrates SNMO thin film as a FM-I system, where the FM state can be tuned by manipulating ASD in the crystal structure, while the I state remains intact.
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Zawawi, Rabiatul Adawiyah, Nurul Nasuha Khairulzaman, Suhadir Shamsuddin, and Norazila Ibrahim. "Comparative Study on Structural, Electrical Transport and Magnetic Properties of Cr-Doped in Charge-Ordered Pr0.75Na0.25Mn1-Xcrxo3 and Nd0.75Na0.25Mn1-Ycryo3 Manganites." International Journal of Engineering & Technology 7, no. 4.30 (November 30, 2018): 76. http://dx.doi.org/10.14419/ijet.v7i4.30.22016.
Повний текст джерелаАнотація:
Cr doping in charge-ordered Pr0.75Na0.25Mn1-xCrxO3 and Nd0.75Na0.25Mn1-yCryO3 have been synthesized using conventional solid-state method to investigate its effect on structural, electrical transport and magnetic properties. X-ray diffraction (XRD) analysis for both compounds showed that the samples were crystallized in an orthorhombic structure with Pnma group. The unit cell volume value decrease as the Cr-doped increased indicating the possibility of Mn3+ ion was replaced by Cr3+ due to the different of ionic radius. The temperature dependence of electrical resistivity showed an insulating behavior down to the lower temperature the both parent compound (x = 0 and y = 0). Successive substitution of Cr at Mn-site in Pr0.75Na0.25Mn1-xCrxO3 manganites induced the metal-insulator (MI) transition temperature around TMI~120 K and TMI~122 K for x = 0.02 and x = 0.04 samples respectively suggestively due to the enhancement of double-exchange (DE) mechanism as a result of suppress the CO state. Analysis of resistivity data of dlnρ/dT-1 vs. T in Nd0.75Na0.25Mn1-yCryO3 manganite, showed a peak around 210 K and 160 K for y = 0 and 0.02 samples respectively while no peak was observed for y = 0.05 sample indicate the charge-ordered (CO) weakened. AC susceptibility, χ’ measurements in Pr0.75Na0.25Mn1-xCrxO3 exhibits paramagnetic to ferromagnetic-like with curie temperature, TC increases from 132 K for x = 0.02 to 141 K for x = 0.04 with Cr content indicate the suppression of CO state meanwhile in Nd0.75Na0.25Mn1-yCryO3 showed paramagnetic to anti-ferromagnetic transition as Neel temperature TN increases from 115 K for y = 0.02 to 125 K for y = 0.05.
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Htoon, Han. "(Invited) Opportunities and Challenges for Quantum Emitters in One and Two Dimensional Materials." ECS Meeting Abstracts MA2022-01, no. 9 (July 7, 2022): 736. http://dx.doi.org/10.1149/ma2022-019736mtgabs.
Повний текст джерелаАнотація:
The last five years have witnessed dramatic advances in realization of quantum emitters (QEs) in one dimensional carbon nanotubes and two dimensional layered semiconductors. These novel QEs offer exciting opportunities for not only storing, processing and transducing of quantum information but also sensing physical phenomena beyond classical detection limits. Realization of these opportunities also present multiple challenges including: (1) realizing room temperature, telecommunication wavelength operation; (2) controlling fundamental as well as quantum optical properties such as QE emission wavelengths, linewidths, polarization, coherent times, single photon purity and indistinguishability; (3) deterministic placement and integration of QEs into photonic, plasmonic, and mangnonic platforms for quantum sensing and transduction applications. Here in this talk I will present recent efforts toward meeting these challenges. In 1D carbon nanotubes, we recently demonstrated that chemical binding configuration of covalent quantum defects can be controlled through the spin multiplicity of photoexcited intermediates. This enable us to control the emission wavelength of QEs by creating previously inaccessible chemical configuration. In 2D semiconductor, we have successfully created the telecommunication wavelength quantum emitters by local strain engineering of MoTe2. We have also realized chiral quantum emitters via exploit of magnetic proximity interaction between quantum emitters of WSe2 monolayer and localized magnetization crated in NiPS3 anti-ferromagnetic insulator by nanoscale stain engineering.
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Itoi, Miho, Toshikazu Nakamura, and Yoshiya Uwatoko. "Pressure-Induced Superconductivity of the Quasi-One-Dimensional Organic Conductor (TMTTF)2TaF6." Materials 15, no. 13 (July 1, 2022): 4638. http://dx.doi.org/10.3390/ma15134638.
Повний текст джерелаАнотація:
We investigated the superconductivity of (TMTTF)2TaF6 (TMTTF: tetramethyl-tetrathiafulvalene) by conducting resistivity measurements under high pressure up to 8 GPa. A cubic anvil cell (CAC) pressure generator, which can produce hydrostatic high-pressure, was used for this study. Since the generalized temperature-pressure (T-P) diagram of (TMTCF)2X (C = Se, S, X: monovalent anion) based on (TMTTF)2PF6 (TCO = 70 K and spin-Peierls: SP, TSP = 15 K) was proposed by Jérome, exploring superconductivity states using high-pressure measurement beyond 4 GPa has been required to confirm the universality of the electron-correlation variation under pressure in (TMTTF)2X (TMTTF)2TaF6, which has the largest octahedral-symmetry counter anion TaF6 in the (TMTTF)2X series, possesses the highest charge-ordering (CO) transition temperature (TCO = 175 K) in (TMTTF)2X and demonstrates an anti-ferromagnetic transition (TAF = 9 K) at ambient pressure. A superconducting state in (TMTTF)2TaF6 emerged after a metal-insulator transition was suppressed with increasing external pressure. We discovered a superconducting state in 5 ≤ P ≤ 6 GPa from Tc = 2.1 K to 2.8 K, whose pressure range is one-third narrower than that of X = SbF6 (5.4 ≤ P ≤ 9 GPa). In addition, when the pressures with maximum SC temperatures are compared between the PF6 and the TaF6 salts, we found that (TMTTF)2TaF6 has a 0.75 GPa on the negative pressure side in the T-P phase diagram of (TMTTF)2PF6.
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Millo, Oded, and Gad Koren. "What can Andreev bound states tell us about superconductors?" Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 376, no. 2125 (June 25, 2018): 20140143. http://dx.doi.org/10.1098/rsta.2014.0143.
Повний текст джерелаАнотація:
Zero-energy Andreev bound states, which manifest themselves in the tunnelling spectra as zero-bias conductance peaks (ZBCPs), are abundant at interfaces between superconductors and other materials and on the nodal surface of high-temperature superconductors. In this review, we focus on the information such excitations can provide on the properties of superconductor systems. First, a general introduction to the physics of Andreev bound states in superconductor/normal metal interfaces is given with a particular emphasis on why they appear at zero energy in d -wave superconductors. Then, specific spectroscopic tunnelling studies of thin films, bilayers and junctions are described, focusing on the corresponding ZBCP features. Scanning tunnelling spectroscopy (STS) studies show that the ZBCPs on the c -axis YBa 2 Cu 3 O 7− δ (YBCO) films are correlated with the surface morphology and appear only in proximity to (110) facets. STS on c -axis La 1.88 Sr 0.12 CuO 4 (LSCO) films exhibiting the 1/8 anomaly shows spatially modulated peaks near zero bias associated with the anti-phase ordering of the d -wave order parameter predicted at this doping level. ZBCPs were also found in micrometre-size edge junctions of YBCO/SrRuO 3 /YBCO, where SrRuO 3 is ferromagnetic. Here, the results are consistent with a crossed Andreev reflection effect (CARE) at the narrow domain walls of the SrRuO 3 . ZBCPs measured in STS studies of manganite/cuprate bilayers could not be attributed to CARE because the manganite's domain wall is much larger than the coherence length in YBCO, and instead are attributed to proximity-induced triplet-pairing superconductivity with non-conventional symmetry. And finally, ZBCPs found in junctions of non-intentionally doped topological insulator films of Bi 2 Se 3 and the s -wave superconductor NbN are attributed to proximity-induced p x + i p y triplet order parameter in the topological material. This article is part of the theme issue ’Andreev bound states’.
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Pandey, Lalit, Rahul Gupta, Amir Khan, Nanhe Kumar Gupta, Soumyarup Hait, Nakul Kumar, Vireshwar Mishra, Nikita Sharma, Peter Svedlindh, and Sujeet Chaudhary. "Topological surface state induced spin pumping in sputtered topological insulator (Bi2Te3)–ferromagnet (Co60Fe20B20) heterostructures." Journal of Applied Physics 134, no. 4 (July 28, 2023). http://dx.doi.org/10.1063/5.0156982.
Повний текст джерелаАнотація:
Topological insulators with high spin–orbit coupling and helically spin-momentum-locked topological surface states (TSSs) can serve as efficient spin current generators for modern spintronics applications. We used the industrial-friendly DC magnetron sputtering technique to fabricate magnetic heterostructures consisting of Bi2Te3 (BT) as a topological insulator and Co60Fe20B20 (CFB) as a magnetic layer and studied the temperature-dependent spin pumping, utilizing out-of-plane ferromagnetic resonance spectroscopy. These results demonstrate that the effective spin-mixing conductance is significantly affected by the contribution of two-magnon scattering (TMS). It is found that the TMS-free effective spin-mixing conductance increases with decreasing temperature. Additionally, results from magneto-transport measurements indicate that the surface coherence length of BT is in accordance with the temperature-dependent effective spin-mixing conductance. This enhancement of effective mixing conductance correlated with the enhancement in the contribution of the TSSs as evaluated using the weak-anti-localization effect. This study provides a deeper understanding of the temperature-dependent spin dynamics in sputtered BT/CFB heterostructures which can serve as a guide for further exploration of such bilayers for topological-based spintronic applications.
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Chigusa, So, Takeo Moroi, and Kazunori Nakayama. "Axion/hidden-photon dark matter conversion into condensed matter axion." Journal of High Energy Physics 2021, no. 8 (August 2021). http://dx.doi.org/10.1007/jhep08(2021)074.
Повний текст джерелаАнотація:
Abstract The QCD axion or axion-like particles are candidates of dark matter of the universe. On the other hand, axion-like excitations exist in certain condensed matter systems, which implies that there can be interactions of dark matter particles with condensed matter axions. We discuss the relationship between the condensed matter axion and a collective spin-wave excitation in an anti-ferromagnetic insulator at the quantum level. The conversion rate of the light dark matter, such as the elementary particle axion or hidden photon, into the condensed matter axion is estimated for the discovery of the dark matter signals.
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Qi, Shaomian, Di Chen, Kangyao Chen, Jianqiao Liu, Guangyi Chen, Bingcheng Luo, Hang Cui, et al. "Giant electrically tunable magnon transport anisotropy in a van der Waals antiferromagnetic insulator." Nature Communications 14, no. 1 (May 2, 2023). http://dx.doi.org/10.1038/s41467-023-38172-7.
Повний текст джерелаАнотація:
AbstractAnisotropy is a manifestation of lowered symmetry in material systems that have profound fundamental and technological implications. For van der Waals magnets, the two-dimensional (2D) nature greatly enhances the effect of in-plane anisotropy. However, electrical manipulation of such anisotropy as well as demonstration of possible applications remains elusive. In particular, in-situ electrical modulation of anisotropy in spin transport, vital for spintronics applications, has yet to be achieved. Here, we realized giant electrically tunable anisotropy in the transport of second harmonic thermal magnons (SHM) in van der Waals anti-ferromagnetic insulator CrPS4 with the application of modest gate current. Theoretical modeling found that 2D anisotropic spin Seebeck effect is the key to the electrical tunability. Making use of such large and tunable anisotropy, we demonstrated multi-bit read-only memories (ROMs) where information is inscribed by the anisotropy of magnon transport in CrPS4. Our result unveils the potential of anisotropic van der Waals magnons for information storage and processing.
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Kander, Niladri Sekhar, Suman Guchhait, and Amal Kumar Das. "Influence of magnetic (Fe) and non-magnetic (In) doping on structural, magnetic, and weak anti-localization properties of Bi2Te3 topological insulator." Physica Scripta, January 20, 2023. http://dx.doi.org/10.1088/1402-4896/acb513.
Повний текст джерелаАнотація:
Abstract In this article, we have studied the changes in structural, magnetic, and magneto-transport properties of Bi2Te3 topological insulator doped with magnetic (Fe) as well as non-magnetic (In) elements. The un-doped along with Fe, In-doped Bi2Te3 are grown using a melt growth technique. The Rietveld analysis of x-ray diffraction data expresses that both In and Fe-dopants substituted the Bi-position with a little bit of interstitial incorporation in host Bi2Te3. It is also noticed that In-doping is slightly favorable for Bi-substitution than Fe. The magnetic characterization reveals a mixing of diamagnetic and Pauli paramagnetic behavior of un-doped and In-doped Bi2Te3, whereas, Fe-doping shows overall paramagnetism with local anti-ferromagnetic interactions among Fe-ions without long-range order. Electrical-transport study represents the metallic response of host Bi2Te3, which is well-maintained for In-doping; however, Fe-doping exhibits prominent anomalies in ρ_xx –T profiles. Importantly, magneto-conductance research indicates a notable deviation of host quantum feature, weak anti-localization effect (WAL) upon magnetic (Fe) doping, whereas non-magnetic In-doping shows a comparatively weak deviation in WAL effect for high doping limit.
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Moradian, Rostam, and Poorya Rabibeigi. "How electrons Coulomb repulsion changes graphene band structure." Scientific Reports 12, no. 1 (March 31, 2022). http://dx.doi.org/10.1038/s41598-022-09527-9.
Повний текст джерелаАнотація:
AbstractBase on effective medium theory we introduce a multi sites method for calculation of realistic energy bands of strongly correlated systems. We found due to approximated self energy, the density of states that obtained directly by calculated local Green function does not reflects system energy bands truly. By using this method we investigated how electrons repulsion renormalizes graphene bands. Graphene realistic bands calculated in both the dynamical mean field theory (DMFT) and four sites beyond super cell approximation for different repulsions. Our calculated interacting graphene bands illustrate a semi metal to a Mott insulator anti ferromagnetic phase transition at repulsions $$u = 2.2 t$$ u = 2.2 t and $$u = 0.6 t$$ u = 0.6 t for DMFT and four sites beyond super cell approximation respectively. These values are much less than finite size quantum Monte Carlo calculation prediction. We showed that the graphene bands are very sensitive to electrons repulsions and this phase transition happens at low repulsions in comparison to graphene band width.
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Xu, Haowei, Hua Wang, Jian Zhou, and Ju Li. "Pure spin photocurrent in non-centrosymmetric crystals: bulk spin photovoltaic effect." Nature Communications 12, no. 1 (July 15, 2021). http://dx.doi.org/10.1038/s41467-021-24541-7.
Повний текст джерелаАнотація:
AbstractSpin current generators are critical components for spintronics-based information processing. In this work, we theoretically and computationally investigate the bulk spin photovoltaic (BSPV) effect for creating DC spin current under light illumination. The only requirement for BSPV is inversion symmetry breaking, thus it applies to a broad range of materials and can be readily integrated with existing semiconductor technologies. The BSPV effect is a cousin of the bulk photovoltaic (BPV) effect, whereby a DC charge current is generated under light. Thanks to the different selection rules on spin and charge currents, a pure spin current can be realized if the system possesses mirror symmetry or inversion-mirror symmetry. The mechanism of BSPV and the role of the electronic relaxation time $$\tau$$ τ are also elucidated. We apply our theory to several distinct materials, including monolayer transition metal dichalcogenides, anti-ferromagnetic bilayer MnBi2Te4, and the surface of topological crystalline insulator cubic SnTe.
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-, Haris Arquam, and Ajit Bahadur Verma -. "A Review Paper on “Vanta-black Color”, “Reinforced Polymer Based Materials/ Radar Absorbing Materials”& “Thermal Infrared Reflective Metal Oxide Sol-gel Coating” Used in “Stealth Vehicle”." International Journal For Multidisciplinary Research 5, no. 3 (June 26, 2023). http://dx.doi.org/10.36948/ijfmr.2023.v05i03.3908.
Повний текст джерелаАнотація:
Every country is doing a lot of research and development work on security and defense. A country like India shares their border with different countries from three sides need a lot of protection on border. Countries are making new armors and weapons with latest technologies so that their border can be protected. With the help of stealth technology, we make any object similar to surrounding environment in term of color (vantablack) and shape. If we use this technology in army jeep and tanks, then enemy will not be able to find out the position of our jeep and tanks on border. Stealth vehicle will be very useful from defense point of view on border. To make the vehicle stealth, we will give a new design to the vehicle, do thermal infrared reflective coating on engine and used super alloy to make the body of the vehicle. By applying thermal infrared reflective coating on vehicle, the vehicle will not emit heat and any heat sensor will not be able to detect the position of the vehicle. Thermal infrared reflective coating will act as heat insulator and will not allow heat to escape from the engine and vehicle body. We will use advanced cooling system to keep the engine temperature under control. The enemy army uses a heat sensor device to detect the vehicle’s position and when the vehicle does not emit heat, the sensor device will become useless. We see the use of thermal barrier coating in aerospace industry where thermal barrier coating applied on engine turbines. Thermal barrier coating concept is similar as Thermal infrared reflective coating. Thermal infrared reflective coatings have anti corrosive properties as well as with stand on high temperature up to 1100⁰C. Thermal expansion that occurs in the turbine blade due to high temperature does not degrade the thermal infrared reflective coating. The outer surface of Aircraft is also an example of high quality thermal infrared reflective coating. The most commonly used thermal infrared reflective coating material is Ferromagnetic Oxide which has extremely high resistance against thermal shock up to 1100⁰C. Ferro-magnetic Oxide increases the durability of thermal infrared reflective coating and it is a rare earth element. Metal Oxide is generally applied on the material as thermal infrared reflective coating by the process of chemical deposition method and physical vapor deposition (diffusion coating methods).