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Статті в журналах з теми "Amplificateurs GaN":
Giakoumis, Alex, Jacques Michel, Vlad Pauker, and Michel Binet. "Amplificateurs GaAs monolithiques à large bande et gain élevé." Annales des Télécommunications 40, no. 3-4 (March 1985): 127–34. http://dx.doi.org/10.1007/bf02997839.
Ginovart, F., and J. C. Simon. "Effets de longueur d'un amplificateur optique à semiconducteur sur la dynamique de gain." Journal de Physique IV (Proceedings) 12, no. 5 (June 2002): 189–91. http://dx.doi.org/10.1051/jp4:20020128.
Zou, Chenhui, Chunyan Xu, Runhao Yu, Xinxin Shan, Stefan Schwarz, Dexi Li, and Xiang-Dang Du. "Tandem amplification of a plasmid-borne tet(A) variant gene confers tigecycline resistance in Escherichia coli." Journal of Antimicrobial Chemotherapy, April 4, 2024. http://dx.doi.org/10.1093/jac/dkae095.
Дисертації з теми "Amplificateurs GaN":
Theveneau, Hadrien. "Amplificateurs de puissance à transistors GaN." Thesis, Lille 1, 2016. http://www.theses.fr/2016LIL10204/document.
The goal of this thesis is to realize a pulsed power source with GaN transistors. After a study of the applications of high power microwaves, and a state of the art of the sources, we realized two prototypes of elementary amplifier modules (wide and narrow band). The wideband module produces 70 W CW from 1 to 2.5 GHz, and the narrowband module produces a power higher than 550 W from 1.1 to 1.3 GHz, with a 750 W peak at 1.1 GHz, in 500 µs pulses with 10 % duty cycle. One difficulty is that GaN transistors have low input and output impedances, from 1 to 5 Ω, difficult to adapt towards the 50 Ω standard on a wide bandwidth, and that several transistors need to be combined to reach high input powers, ensuring their mutual isolation to avoid failure propagation and oscillations. We developpes a power combiner using an impedance pre-adaptation with a deffective ground plane allowing to reach a 2.5 Ω low input impedance, and using a microwave absorber to avoid odd mode reflections, which allows the mutual isolation of the transistors
Gamand, Florent. "Amplificateurs de puissance et convertisseurs DC/DC à base de GaN pour des applications hyperfréquences." Thesis, Lille 1, 2013. http://www.theses.fr/2013LIL10064/document.
High efficiency is a key element in modern telecommunication systems, especially in RF power amplifiers. Efficiency has to be as high as possible in order to reduce power consumption thus minimising working cost, maximising autonomy and improve system reliability. In order to increase global efficiency of a power amplifier, dynamic biasing, based on the association of an amplifier and a DC/DC converter, is often used. GaN HEMTs enable high RF power at high frequencies, moreover their capability to switch very quickly and their low resistive losses make them good candidates for both power amplification applications and high speed, high efficiency commutation applications, like DC/DC converters used in dynamic biasing systems. The first part of this manuscript is dedicated to GaN transistors properties and their advantages compared to other semi-conductors for commutation and RF amplification applications. Their characterisation and modelling is also discussed. The second chapter is dedicated to the design and characterisation of high speed DC/DC converters for dynamic biasing applications. The last part approaches high efficiency GaN power amplifiers design in C band for telecommunication applications. The association of a DC/DC converter, designed in chapter II, and a GaN power amplifier in S band in the context of dynamic biasing is also presented and the obtained efficiency improvement is reported
Augeau, Patrick. "Alimentations de puissance agiles en technologie GaN pour l’amplification de puissance RF." Limoges, 2014. https://aurore.unilim.fr/theses/nxfile/default/9021e9e4-b921-4e14-b994-76a04bf6c5db/blobholder:0/2014LIMO4010.pdf.
In telecommunication systems, the impact of front-end consumption on the system efficiency is one of the most critical issues which drives a lot of research effort. At power amplifier (PA) level, the implementation of efficiency improvement techniques is mandatory. The dynamic biasing technique (envelope tracking) appears as a promising technique for the modern standard communications requirements. In such a technique, the drain supply voltage of the PA is dynamically adjusted in accordance with the value of envelope signal being transmitted. State of the art works focusing on bias modulators for envelope tracking highlight the design complexity of such modulators to meet the expected efficiency, power and speed requirements. In this thesis, innovative topology and design method of GaN-based switching cells is theoretically analyzed and validated by non-linear transient simulations. Such improvements of switching cells are validated by two different demonstrators which are realized in high-frequency, high-power GaN HEMT technology. The first modulator is a DC-DC converter driven by a Pulse Width Modulation (PWM) signal, in order to perform a continuous tracking of the drain supply envelope. The second modulator operates in switching mode in order to perform a discrete tracking of the drain supply envelope. This last modulator was coupled to a RF power amplifier to experimentally demonstrate its efficiency without negative impact on PA linearity
Sardin, David. "Méthodes de conception d’amplificateurs de puissance flexibles pour les applications spatiale : Application en bande S et en technologie HEMT GaN à un module 30W contrôlé par envelope tracking." Limoges, 2010. http://www.theses.fr/2010LIMO4042.
This work deals with efficiency improvement of power amplifiers which are part of radiofrequency systems. Current requirements in the aerospace industry make next generation satellites to be power flexible and reconfigurable in order to follow markets evolution. Hence, the idea aims on the one hand, at properly using available on-board DC power and on the other hand, at offering the spacecraft capabilities to lead various mission plans. Consequently, this thesis mainly deals with efficiency improvement of HPAs and describes the design of an highly efficient 30W HPA based on the Envelope Tracking concept. The proposed VHF envelope amplifier demonstrates significant performances regarding efficiency and bandwidth while assuming wide bandwidth modulated signals
Allam-Ouyahia, Samia. "Amplificateurs de puissance à très haut rendement, pour les systèmes radar basés sur les technologies LDMOS Si et HEMT Gan." Cergy-Pontoise, 2006. http://www.theses.fr/2006CERG0331.
The objective of this work is to evaluate power technologies and high efficiency classes (F and inverse F ) for L-band TIR module in phase array radar of Thalès Air Defence. The rapid development of active antennas systems has put power amplifier (PA) efficiency in focus. The combination of high PAE and high power density is very important in new radar generations. We evaluated the performances of two technologies considered HEMT GaN and Silicon LDMOS. For GaN, we evaluated the performances of HEMT AIGaN/GaN by multiharmonic simulations. A 71% PAE is achieved for class F and 74% for inverse class F for output power of 4W. For LDMOS technology, two inverse Class F power amplifiers are designed. The first amplifier allows evaluation of the LDMOS potential for inverse Class F operation. It demonstrates 73. 7% drain e_ciency, 13. 2W output power and 16dB power gain at 1 GHz and for 2dB gain compression. The second one was designed with wider bandwidth as additional criterion. Measurements show high output power and drain efficiency over 170MHz bandwidth (0. 9 to 1. 07 GHz). These performances, compared to reported results for single stage inverse Class F power amplifiers are in the state of the art
Callet, Guillaume. "Caractérisation et modélisation de transistors HEMT AlGaN/GaN et InAlN/GaN pour l’amplification de puissance en radio-fréquences." Limoges, 2011. https://aurore.unilim.fr/theses/nxfile/default/3c0fde17-3720-49cd-9824-bd071826245e/blobholder:0/2011LIMO4033.pdf.
This report deals with the characterization of GaN HEMTs devices in order to create their model. An exhaustive characterization has been realized for AlInN/GaN and AlGaN/GAN based HEMTs. A special care has been given to the different thermal characterization methods, with the use of the 3ω method for the measurement of the thermal impedance. A study of scaling rules for small-signal model is presented. The non-linear model presented is developed in order to extend his application domain to the power amplification and power switches. Finally it is used in the design of the first poser amplifier base on AlInN technology in Ka-band
Trassaert, Stéphane. "Réalisation technologique de transistors à effet de champ dans les filières InP et GaN pour amplification de puissance hyperfréquence." Lille 1, 2000. https://pepite-depot.univ-lille.fr/RESTREINT/Th_Num/2000/50376-2000-45.pdf.
La seconde partie porte sur la realisation de mesfets dans la filiere gan pour des applications en puissance et a haute temperature. Les differentes briques technologiques permettant de realiser le composant ont ete d'abord etudiees. Le contact ohmique retenu tient thermiquement jusqu'a 600\c. Une gravure du gan par plasma a aussi ete mise au point. Enfin, le contact schottky a ete aborde. Les composants realises ont ete caracterises. Nous avons obtenu, selon la distance source drain, jusqu'a 140 v et 350 v pour respectivement une tenue en tension vds en configuration transistor a canal ouvert et une tension de claquage en configuration diode inverse. La mesure a haute temperature a montre le fonctionnement du composant jusqu'a 450\c sans degradation. La mesure en regime impulsionnel a mis en evidence l'existence de pieges localises en surface qui peuvent etre excites par la lumiere et/ou la temperature et/ou le point de polarisation. Une densite de puissance de 2,2 w/mm a ete obtenue a 3 ghz pour une longueur de grille de 300 nm, ce qui constitue un resultat au niveau de l'etat de l'art
Piazza, Michele. "Impact of Schottky structure on GaN-based HEMTs reliability." Limoges, 2012. http://www.theses.fr/2012LIMO4020.
Les transistors à effet de champ à hétérostructure (HFET or HEMT) en nitrure de gallium se présentent comme des candidats à fort potentiel pour la prochaine génération d’amplificateur de puissance dans les domaines de radio fréquences et des ondes millimétriques. Ce sont ses propriétés physiques et électroniques telle qu’une grande largeur de bande interdite, un potentiel pour de forte densité de courant et un très fort champ de claquage qui le rendent supérieur aux semi-conducteurs tels que le silicium et l’arséniure de gallium. Ce manuscrit reprend des notions générales sur la fiabilité des HEMTs en GaN et décrit certains tests de vieillissement accéléré et certaines mesures complémentaires réalisés au sein du Groupe de Microélectronique de Thales – III-VLAB, en collaboration avec l’Université de Limoges (XLIM), et le laboratoire d’analyse physique de Thales Research & Technology (LATPI). Le travail se focalise sur l’impact du contact de grille sur la stabilité du transistor HEMT ; les principaux paramètres étudiés sont les deux différents contacts métalliques (en molybdène et en nickel) et les deux matériaux développés au sein du III-VLAB, AlGaN et InAlN sur buffer GaN. L’évaluation s’appuie sur des essais de stockage en température ainsi que sur des essais sous polarisation statique continue en configuration de débit. Les résultats des essais permettent de préciser la fiabilité de différents contacts et empilements métalliques, tandis que les essais en débit mettent en évidence l’effet du champ électrique et de la densité de courant sur la dégradation des transistors en condition de fonctionnement
Letailleur, Lucas. "Éléments d'architecture d'émetteur linéarisé en technologie GaN pour des applications 5G millimétrique." Electronic Thesis or Diss., Université Gustave Eiffel, 2023. http://www.theses.fr/2023UEFL2073.
This thesis focuses on architectures and circuits for 5G FR2-1 communication systems. These systems operate in millimeter waves and use massive Multiple Input Multiple Output (MIMO) techniques. A gallium nitride (GaN) power amplifier (PA) from Macom is characterized and modelled. The results show that the PA do not meet the requierements of the 5G FR2-1 standard. A digital predistorsion (DPD) and an analog predistortion (APD) are therefore investigated and compared. DPD offers better linearization performance than the APD, but cannot linearize bandwiths grater than 100 MHz. The APD, on the other hand, allows to linearized a signal with a bandwidth up to 400 MHz on the n258 frequency band, and can be co-integrated with the PA. Both linearization techniques enable the amplifier to meet the requirements of 5G FR2-1 standard. The use of massive MIMO suggests that conventional architectures need to be reviewed. Consequently, a new approach for sizing the critical elements of the emission architectures is proposed. The main objective is to find the most suitable trade-off between the emitted power, linearity and the consumption of the overall architecture. For beamforming, a Butler matrix, using the same substrate as the power amplifier, is designed, and a new architecture is investigate. The architecture uses a co-design of a single power amplifier, a switch and a Butler matrix network, and enables 32 radiating elements to be fed. Finally, a comparative analysis of low-noise amplifiers based on GaN and gallium arsenide (GaAs) is carried out and a figure of merit is proposed. This study shows that it is possible to use the same technology for all front-end elements
Delprato, Julien. "Analyse de la stabilité d'impulsion à impulsion des amplificateurs de puissance HEMT GaN pour applications radar en bande S." Thesis, Limoges, 2016. http://www.theses.fr/2016LIMO0060/document.
Radar-oriented applications require stringent performances. Among them, emitting pulse train with uniform envelope characteristics in term of amplitude and phase. The criterion to quantify the self-consistency of radar signals over the pulse train is the pulse to pulse stability. The power amplifier is the most critical element in the RF radar chain because it has a strong impact on the overall pulse to pulse stability performances. In this context, this work is focused on the study of the impact of a HEMT GaN power amplifier on the pulse to pulse stability. Mathematical approach is presented to derive the pulse to pulse stability from time domain envelope measurements. Design and implementation of a 50Ω matched RF power amplifier are presented. Different radar bursts scenario are investigated and their impact on the pulse to pulse stability are quantified through extensive time domain envelope measurements. For that purpose, a dedicated experimental heterodyne time domain envelope test bench has been developed. These pulse to pulse stability measurements are finally used to optimize and fully validate a nonlinear electrical model of a HEMT GaN, allowing to quantify the relative impact of thermal and trapping effects during circuit envelope simulation in radar-oriented applications