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Статті в журналах з теми "Amorphous Silica Surface"
Zhuravlev, L. T. "Characterization of amorphous silica surface." Reaction Kinetics & Catalysis Letters 50, no. 1-2 (September 1993): 15–25. http://dx.doi.org/10.1007/bf02062184.
Повний текст джерелаStievano, Lorenzo, Ling Yu Piao, Irène Lopes, Ming Meng, Dominique Costa, and Jean-François Lambert. "Glycine and lysine adsorption and reactivity on the surface of amorphous silica." European Journal of Mineralogy 19, no. 3 (July 2, 2007): 321–31. http://dx.doi.org/10.1127/0935-1221/2007/0019-1731.
Повний текст джерелаTaj, S., A. Rosu-Finsen, and M. R. S. McCoustra. "Impact of surface heterogeneity on IR line profiles of adsorbed carbon monoxide on models of interstellar grain surfaces." Monthly Notices of the Royal Astronomical Society 504, no. 4 (May 22, 2021): 5806–12. http://dx.doi.org/10.1093/mnras/stab1174.
Повний текст джерелаLiu, Quan Xiao, and Wen Cai Xu. "Study on Amorphous Silica Powder Properties." Advanced Materials Research 512-515 (May 2012): 2428–33. http://dx.doi.org/10.4028/www.scientific.net/amr.512-515.2428.
Повний текст джерелаTosheva, Lubomira, Valentin Valtchev, and Johan Sterte. "Amorphous very high surface area silica macrostructures." Journal of Materials Chemistry 10, no. 10 (2000): 2330–37. http://dx.doi.org/10.1039/b001096k.
Повний текст джерелаWang, Bai Kun, Hao Ding, Yun Xing Zheng, and Ning Liang. "Preparation and Characterisation of Amorphous Silica from Alkali Wastewater Produced in Manufacturing Process of ZrOCl2." Advanced Materials Research 194-196 (February 2011): 2164–68. http://dx.doi.org/10.4028/www.scientific.net/amr.194-196.2164.
Повний текст джерелаHefland, R. B., P. E. Schwarzel, B. V. Johansen, T. Myran, N. Uthus, and M. Refsnes. "Silica-induced cytokine release from A549 cells: importance of surface area versus size." Human & Experimental Toxicology 20, no. 1 (January 2001): 46–55. http://dx.doi.org/10.1191/096032701676225130.
Повний текст джерелаYong, R. N., A. M. O. Mohamed, and B. W. Wang. "Influence of amorphous silica and iron hydroxide on interparticle action and soil surface properties." Canadian Geotechnical Journal 29, no. 5 (October 1, 1992): 803–18. http://dx.doi.org/10.1139/t92-088.
Повний текст джерелаSchrader, Alex M., Jacob I. Monroe, Ryan Sheil, Howard A. Dobbs, Timothy J. Keller, Yuanxin Li, Sheetal Jain, M. Scott Shell, Jacob N. Israelachvili, and Songi Han. "Surface chemical heterogeneity modulates silica surface hydration." Proceedings of the National Academy of Sciences 115, no. 12 (March 5, 2018): 2890–95. http://dx.doi.org/10.1073/pnas.1722263115.
Повний текст джерелаZhang, Xiao Jing, Hao Ding, and Bai Kun Wang. "Recycling and Characterisation of Amorphous Silica from Zr-Containing Silica Residue." Advanced Materials Research 194-196 (February 2011): 2109–14. http://dx.doi.org/10.4028/www.scientific.net/amr.194-196.2109.
Повний текст джерелаДисертації з теми "Amorphous Silica Surface"
Chen, Si-Han. "Molecular Dynamics Investigation of Surface Potential andElectrokinetic Phenomena at the Amorphous Silica/WaterInterface." The Ohio State University, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=osu1534510054324125.
Повний текст джерелаWilmsmeyer, Amanda Rose. "Ultrahigh Vacuum Studies of the Fundamental Interactions of Chemical Warfare Agents and Their Simulants with Amorphous Silica." Diss., Virginia Polytechnic Institute and State University, 2012. http://hdl.handle.net/10919/54366.
Повний текст джерелаPh. D.
Arancon, Rick Arneil. "Exploration of Transition Metal Sulfide Catalysts Prepared by Controlled Surface Chemistry." Thesis, Lyon, 2018. http://www.theses.fr/2018LYSEN063.
Повний текст джерелаHydrotreating is an important catalytic process in petroleum refining which uses sulfided bimetallic catalysts NiWS or NiMoS (or CoMoS) supported on alumina. Their conventional preparation involves an incipient wetness impregnation of an aqueous solution of Mo/W and Ni/Co salts, and then activation by a sulfo-reductive agent (such as H2S/H2). To meet environmental regulations and improve the energy efficiency of hydrotreatment, permanent improvements on the performance of these catalytic systems are expected. This work is thus focused on the preparation of highly active hydrotreating catalysts through a controlled surface chemistry (CSC) approach; which involves the successive impregnation of Mo5+ and Ni2+ molecular precursors in an organic solvent on a thermally treated silica-alumina support. In the first part of this thesis, the active phase genesis of CSC and conventional Mo and NiMo catalysts is studied by in situ quick-XAS combined with various other techniques (chemometrics, XPS, EPR, STEM-HAADF, molecular modeling). We thus propose molecular structures from the oxide of supported Mo and Ni precursors up to the numerous intermediate sulfided species as a function of temperature. This multi-technique analysis enables first to reveal the specific features of the genesis of CSC and conventional catalysts which may explain their different catalytic activities. Then, it also reveals new insights into the mechanisms of Ni promoter incorporation into the NiMoS phase as a function of the preparation. In the second part, the feasibility of replacing Co and Ni as promoters is explored. Using the CSC method, we attempted to synthesize alternative catalysts of the form XYMoS ternary sulfides, where X and Y are 3d transition metals. As suggested by previous quantum simulations, certain XY formulations possibly reveal a synergy effect as observed in CoMoS and NiMoS active phases. The most promising formulations merit further investigations
Lund, Christopher Paul. "Surface spectroscopy and Auger lineshape analysis studies of amorphous silicon surfaces." Thesis, Lund, Christopher Paul (1993) Surface spectroscopy and Auger lineshape analysis studies of amorphous silicon surfaces. PhD thesis, Murdoch University, 1993. https://researchrepository.murdoch.edu.au/id/eprint/42221/.
Повний текст джерелаFerré, Tomàs Rafel. "Surface passivation of crystalline silicon by amorphous silicon carbide films for photovoltaic applications." Doctoral thesis, Universitat Politècnica de Catalunya, 2008. http://hdl.handle.net/10803/6350.
Повний текст джерелаActualment la indústria fotovoltaica empra capes de nitrur de silici crescut mitjançant la tècnica PECVD. Com a alternativa, es presenta el carbur de silici amorf (a-SiC), també crescut mitjançant PECVD. Resultats anteriors mostren que la passivacio del silici a partir de carbur de silici amorf son excel·lents quan el material és ric en silici i dopat amb fòsfor. L'alt contingut en silici provoca absorció de la llum a la capa, que no es tradueix en corrent elèctric, fent d'aquesta manera que el material sigui només útil quan s'aplica a la cara no il·luminada de la cèl·lula.
L'objectiu d'aquesta tesi és millorar les propietats de passivació del carbur de silici afegint els requisits indispensables en cèl·lules solars: uniformitat, transparència i propietats antireflectants, estabilitat a llarg termini i enfront altes temperatures. A part de les aplicacions tecnològiques també es pretèn entendre millor les propietats fonamentals de passivació.
Els principals resultats són:
- La passivació millora a mesura que s'incrementa el gruix de la capa de a-SiC, fins arribar a una saturació a partir de 50 nm. El mecanisme responsable es una millor saturació dels defectes de la interficie amb hidrogen. Al contrari del que es pensava a priori, la càrrega el·lèctrica emmagatzemada a la capa es manté constant amb el gruix.
- Experiments amb "corona charge" indiquen que l'origen de la càrrega el·lèctrica que produeix la passivació per efecte de camp es troba en la densitat d'estats a la interfície.
- No ha estat possible trobar una capa tranparent (rica en carboni) amb bona passivació. La millor aproximació per combinar passivació més transparència és emprar dues capes, una molt prima rica en silici per passivar i l'altra rica en carboni per aconseguir les propietats antireflectants adequades. S'ha optimitzat el gruix de la capa rica en silici per aconseguir un compromís entre la pèrdua de corrent degut a l'absorció de la llum a la capa i les propietats de passivació. Aquesta combinació de doble capa s'ha fet servir per passivar bases tipus p i emissors tipus n amb resultats excel·lents. Finalment, amb la doble capa es va poder fabricar la primera cèl·lula passivada amb carbur de silici amb una eficiencia > 20%.
- S'ha desenvolupat un material nou: l'al·leació de silici, carboni i nitrogen dopada amb fòsfor. Aquest material ha donat els millors resultats de passició fins ara obtingut dins el nostre grup en bases tipus p i tipus n i en emissors tipus n. La composició òptima és rica en silici i la combinació de capes dobles amb diferents composicions, com en el cas anterior, torna a donar bons resultats de passivació i transparència.
- S'han desenvolupat experiments d'estrès tèrmic a alta temperatura. Les propietats de passivació es veuen fortament afectades desprès de l'estrès si les capes són riques en silici. D'altra banda, les dobles capes mostren una estabilitat molt més alta a l'estrès tèrmic.
The thesis focuses on the study of surface passivation of crystalline silicon to produce high efficiency solar cells (with conversion efficiencies > 20%) at reduced prices. The state of the art in surface passivation is done by thin films of amorphous silicon nitride grown by Plasma Enhanced Chemical Vapour Deposition (PECVD) and it is a very well established material in the photovoltaic field.
In this thesis we offer an alternative that is based on amorphous silicon carbide (a-SiC), also grown by PECVD. The passivation properties of silicon carbide have been already studied in our group finding that excellent results can be obtained when the films are rich in silicon, especially for those doped with phosphorus to make a n-type material. Because this feature leads to undesirable absorption of solar light within the films that does not contribute to the photocurrent, silicon carbide would then be relegated to passivate only the rear side of the solar cell.
The aim of this work is to improve surface passivation properties developed previously and add compulsory requisites for the application of crystalline solar cells. These requisites are: uniformity, transparency and antireflective properties, stability under long term operation and stability under high temperature steps (allowing screen printing processes). Also it is the willing to provide a better understanding of the fundamental properties.
The main results achieved are enumerated hereafter:
- Surface passivation improves with the film thickness and then saturates for films thicker than 50 nm. The mechanism responsible for this improvement is not an increase of the electric charge in the film, as in principle could be thought, but a better saturation of defects by the presence of hydrogen. The amount of charge density seems to be independent of the film.
- Experiments of corona charge reveal some treats about the nature of the charge density to provide the field effect passivation. The origin of the charge seems to be a continuous density of states at the interface, rather a fixed charge allocated in the film.
- None of the attempts using carbon rich films, which are transparent and with antireflective properties, resulted in excellent surface passivation. Such attempts included variation of the deposition parameters, use of remote plasma PECVD with high incorporation of hydrogen, and introduction of nitrogen of in the phosphorus doped a-SiC films. Therefore, up to now it becomes apparent that it is a fundamental property of silicon carbide films the necessity to be rich in silicon to perform surface passivation.
- The way to combine surface passivation and antireflective properties was applying stacks of different a-SiC layers: one silicon rich and one carbon rich. The thickness of the silicon rich layer was optimized to reach a trade-off between level of passivation and lost of photocurrent due to the absorption in the film. The stacks were used to passivate p-type bases, with reasonably good results, and n+- type emitters, with very good results. The stacks provided the the first silicon solar a-SiC rear side passivated with efficiency above 20%.
- A new material was tested: a ternary alloy of silicon, carbon and nitrogen doped with phosphorus. This material was applied to n- and p-type bases and n+-type emitters, presenting the best results in surface passivation achieved by our group, and comparable to surface passivation record achieved by amorphous silicon carbide. Best composition was rich in silicon, and again stacks of silicon rich and carbon rich films was combined successfully.
- Stability against thermal processes was tested on different passivation schemes. After the treatment, the passivation is strongly reduced for single silicon rich films, which were offering good initial results. On the other hand, the stacks with a second carbon rich film maintain reasonably well the surface passivation properties.
Almeida, Serrita Avril. "Modification of amorphous silicon nitride surfaces by ion implantation of gallium." Thesis, University of Surrey, 1999. http://epubs.surrey.ac.uk/843307/.
Повний текст джерелаSuwito, Dominik [Verfasser]. "Intrinsic and doped amorphous silicon carbide films for the surface passivation of silicon solar cells / Dominik Suwito." München : Verlag Dr. Hut, 2011. http://d-nb.info/1011441772/34.
Повний текст джерелаLabrune, Martin. "Silicon surface passivation and epitaxial growth on c-Si by low temperature plasma processes for high efficiency solar cells." Phd thesis, Ecole Polytechnique X, 2011. http://pastel.archives-ouvertes.fr/pastel-00611652.
Повний текст джерелаCarteret, Cédric. "Etude, par spectroscopie dans le proche infrarouge, et modélisation des structures de surface et de l'hydratation de silices amorphes." Nancy 1, 1999. http://www.theses.fr/1999NAN10238.
Повний текст джерелаPepenene, Refuoe Donald. "Macroscopic and Microscopic surface features of Hydrogenated silicon thin films." University of the Western Cape, 2018. http://hdl.handle.net/11394/6414.
Повний текст джерелаAn increasing energy demand and growing environmental concerns regarding the use of fossil fuels in South Africa has led to the challenge to explore cheap, alternative sources of energy. The generation of electricity from Photovoltaic (PV) devices such as solar cells is currently seen as a viable alternative source of clean energy. As such, crystalline, amorphous and nanocrystalline silicon thin films are expected to play increasingly important roles as economically viable materials for PV development. Despite the growing interest shown in these materials, challenges such as the partial understanding of standardized measurement protocols, and the relationship between the structure and optoelectronic properties still need to be overcome.
Книги з теми "Amorphous Silica Surface"
Devine, Roderick A. B. The Physics and Technology of Amorphous SiO2. Boston, MA: Springer US, 1988.
Знайти повний текст джерелаB, Devine Roderick A., ed. The physics and technology of amorphous SiO₂. New York: Plenum Press, 1988.
Знайти повний текст джерелаHydrogenated amorphous silicon. Cambridge: Cambridge University Press, 1991.
Знайти повний текст джерела1940-, Tanaka K., ed. Glow-discharge hydrogenated amorphous silicon. Tokyo: KTK Scientific Publishers, 1989.
Знайти повний текст джерелаWilfried G. J. H. M. Sark. Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells. Berlin, Heidelberg: Springer-Verlag Berlin Heidelberg, 2011.
Знайти повний текст джерелаRahman, Mahmud M. Amorphous and Crystalline Silicon Carbide II: Recent Developments Proceedings of the 2nd International Conference, Santa Clara, CA, December 15-16, 1988. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989.
Знайти повний текст джерелаSenoussaoui, Nadia. Einfluss der Oberflächenstrukturierung auf die optischen Eigenschaften der Dünnschichtsolarzellen auf der Basis von a-Si : H und [mu]c-Si: H. Jülich: Forschungszentrum Jülich, Zentralbibliothek, 2004.
Знайти повний текст джерелаStreet, R. A. Hydrogenated Amorphous Silicon. Cambridge University Press, 2005.
Знайти повний текст джерелаStreet, R. A. Hydrogenated Amorphous Silicon. Cambridge University Press, 2010.
Знайти повний текст джерелаStreet, R. A. Hydrogenated Amorphous Silicon. Cambridge University Press, 2011.
Знайти повний текст джерелаЧастини книг з теми "Amorphous Silica Surface"
Bernasconi, M. "AB-INITIO MOLECULAR DYNAMICS SIMULATION OF AMORPHOUS SILICA SURFACE." In Defects in SiO2 and Related Dielectrics: Science and Technology, 371–90. Dordrecht: Springer Netherlands, 2000. http://dx.doi.org/10.1007/978-94-010-0944-7_13.
Повний текст джерелаBacca, E., L. F. Castro, M. Gómez, and P. Prieto. "Photoconductivity in Posthydrogenated Amorphous Silicon Thin Films." In Lectures on Surface Science, 78–81. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-71723-9_12.
Повний текст джерелаHorbach, J., T. Stühn, C. Mischler, W. Kob, and K. Binder. "Amorphous Silica at Surfaces and Interfaces: Simulation Studies." In High Performance Computing in Science and Engineering ’03, 167–79. Berlin, Heidelberg: Springer Berlin Heidelberg, 2003. http://dx.doi.org/10.1007/978-3-642-55876-4_13.
Повний текст джерелаUnger, K. K. "Surface Structure of Amorphous and Crystalline Porous Silicas." In Advances in Chemistry, 165–81. Washington DC: American Chemical Society, 1994. http://dx.doi.org/10.1021/ba-1994-0234.ch008.
Повний текст джерелаWagner, H. "Similarities Between Crystalline Silicon Surfaces and Amorphous Silicon Films." In Springer Proceedings in Physics, 155–60. Berlin, Heidelberg: Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-84933-6_13.
Повний текст джерелаZeller, M. V., and J. J. Bellina. "Effect of Surface Modifications of Cubic SiC on Metallization Interactions." In Amorphous and Crystalline Silicon Carbide and Related Materials, 133. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-93406-3_19.
Повний текст джерелаKaplan, R. "Surface Structures of β-SiC, 6H-SiC and Pseudomorphic Si Adlayers." In Amorphous and Crystalline Silicon Carbide and Related Materials, 100–106. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-93406-3_14.
Повний текст джерелаRappich, Jörg. "Electrochemical Passivation and Modification of c-Si surfaces." In Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells, 95–130. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-22275-7_4.
Повний текст джерелаDas, Sonali, Avra Kundu, Chandan Banerjee, Prasenjit Dey, Swapan K. Datta, and Hiranmay Saha. "Front Surface Glass Texturization for Improved Performance of Amorphous Silicon Solar Cell." In Physics of Semiconductor Devices, 375–78. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_94.
Повний текст джерелаGermain, Aurèle, Marta Corno, and Piero Ugliengo. "Computing Binding Energies of Interstellar Molecules by Semiempirical Quantum Methods: Comparison Between DFT and GFN2 on Crystalline Ice." In Computational Science and Its Applications – ICCSA 2021, 632–45. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-86976-2_43.
Повний текст джерелаТези доповідей конференцій з теми "Amorphous Silica Surface"
Zhang, Ziyang, Matteo Dainese, Lech Wosinski, Marcin Swillo, Sanshui Xiao, and Min Qiu. "Experimental demonstration of 2D photonic crystal surface cavity in amorphous silicon on silica structure." In OFC/NFOEC 2007 - 2007 Conference on Optical Fiber Communication and the National Fiber Optic Engineers Conference. IEEE, 2007. http://dx.doi.org/10.1109/ofc.2007.4348573.
Повний текст джерелаCopeland, Grant, Andrew Jacobson, John Kaszuba, Janet Dewey, and Subhash Risbud. "Dependence of Amorphous Silica Surface Speciation on Electric Double Layer (EDL) Overlap in Confinement." In Goldschmidt2020. Geochemical Society, 2020. http://dx.doi.org/10.46427/gold2020.477.
Повний текст джерелаAgnello, S., A. Alessi, G. Iovino, M. Cannas, F. M. Gelardi, and R. Boscaino. "Diffusion and outgassing of O2 in amorphous SiO2 silica nanoparticles with specific surface properties." In 2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC). IEEE, 2014. http://dx.doi.org/10.1109/nmdc.2014.6997425.
Повний текст джерелаVukelic, S., B. Gao, S. Ryu, and Y. L. Yao. "Structural Modification of Amorphous Fused Silica Under Femtosecond Laser Irradiation." In ASME 2008 International Manufacturing Science and Engineering Conference collocated with the 3rd JSME/ASME International Conference on Materials and Processing. ASMEDC, 2008. http://dx.doi.org/10.1115/msec_icmp2008-72210.
Повний текст джерелаMeng, Fanhe, Jin Liu, and Robert F. Richards. "Molecular Dynamics Study on Thermal Resistance Between Amorphous Silica Nanoparticles." In ASME 2017 Heat Transfer Summer Conference. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/ht2017-4894.
Повний текст джерелаMcQueen, Mark T. "Energy and High Surface Area Siliceous Ash From the Combustion of Rice Hulls." In 17th International Conference on Fluidized Bed Combustion. ASMEDC, 2003. http://dx.doi.org/10.1115/fbc2003-018.
Повний текст джерелаNeralla, Sudheer, Sergey Yarmolenko, Dhananjay Kumar, Devdas Pai, and Jag Sankar. "Cross-Sectional Nanoindentation of Alumina Thin Films Deposited by Pulsed Laser Deposition Process." In ASME 2006 International Mechanical Engineering Congress and Exposition. ASMEDC, 2006. http://dx.doi.org/10.1115/imece2006-14924.
Повний текст джерелаWeisz, S. Z., J. Avalos, M. Gomez, A. Many, Y. Goldstein, and E. Savir. "Bulk and surface states on hydrogenated amorphous silicon." In The 8th Latin American congress on surface science: Surfaces , vacuum, and their applications. AIP, 1996. http://dx.doi.org/10.1063/1.51116.
Повний текст джерелаMatsumoto, Yasuhiro, René Asomoza, Gustavo Hirata, and Leonel Cota-Araiza. "Boron-carbide p-type layer for amorphous silicon solar cells." In The 8th Latin American congress on surface science: Surfaces , vacuum, and their applications. AIP, 1996. http://dx.doi.org/10.1063/1.51130.
Повний текст джерелаArmandi, Marco, Barbara Bonelli, and Edoardo Garrone. "Synthesis and Characterization of Mesoporous and Microporous Carbons With Potential Applications as Hydrogen Storage Media." In ASME 8th Biennial Conference on Engineering Systems Design and Analysis. ASMEDC, 2006. http://dx.doi.org/10.1115/esda2006-95740.
Повний текст джерела