Статті в журналах: "Amorphous-amorphous interfaces"

1

Huang, L., Z. Q. Chen, W. B. Liu, P. Huang, X. K. Meng, K. W. Xu, F. Wang, and T. J. Lu. "Enhanced irradiation resistance of amorphous alloys by introducing amorphous/amorphous interfaces." Intermetallics 107 (April 2019): 39–46. http://dx.doi.org/10.1016/j.intermet.2019.01.007.

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2

Chu, V., M. Fang, and B. Drevillon. "Insituellipsometric study of amorphous silicon/amorphous silicon‐carbon interfaces." Journal of Applied Physics 69, no. 5 (March 1991): 3363–65. http://dx.doi.org/10.1063/1.348534.

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3

Wei, Shaosheng, Xiaohua Yu, and Dehong Lu. "First-Principles Calculation of the Bonding Strength of the Al2O3-Fe Interface Enhanced by Amorphous Na2SiO3." Materials 15, no. 13 (June 22, 2022): 4415. http://dx.doi.org/10.3390/ma15134415.

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In this paper, the interfacial adhesion work (Wad), tensile strength, and electronic states of the Fe-amorphous Na2SiO3-Al2O3 and Fe-Al2O3 interfaces are well-investigated, utilizing the first-principles calculations. The results indicate that the Fe-amorphous Na2SiO3-Al2O3 interface is more stable and wettable than the interface of Fe-Al2O3. Specifically, the interfacial adhesion work of the Fe-amorphous Na2SiO3 interface is 434.89 J/m2, which is about forty times that of the Fe-Al2O3 interface, implying that the addition of amorphous Na2SiO3 promotes the dispersion of Al2O3 particle-reinforced. As anticipated, the tensile stress of the Fe-amorphous Na2SiO3-Al2O3 interface is about 46.58 GPa over the entire critical strain range, which is significantly greater than the Fe-Al2O3 interface control group. It could be inferred that the wear resistance of Al2O3 particle-reinforced is improved by adding amorphous Na2SiO3. To explain the electronic origin of this excellent performance, the charge density and density of states are investigated and the results indicate that the O atom in amorphous Na2SiO3 has a bonding action with Fe and Al; the amorphous Na2SiO3 acts as a sustained release. This study provides new ideas for particle-reinforced composites.

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4

Césari, C., G. Nihoul, J. Marfaing, W. Marine, and B. Mutaftschiev. "Amorphous-crystalline interfaces after laser induced explosive crystallization in amorphous germanium." Surface Science Letters 162, no. 1-3 (October 1985): A613. http://dx.doi.org/10.1016/0167-2584(85)90329-9.

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5

Césari, C., G. Nihoul, J. Marfaing, W. Marine, and B. Mutaftschiev. "Amorphous-crystalline interfaces after laser induced explosive crystallization in amorphous germanium." Surface Science 162, no. 1-3 (October 1985): 724–30. http://dx.doi.org/10.1016/0039-6028(85)90972-0.

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6

Cheng, Z. Y., Jing Zhu, X. H. Liu, Xi Wang, and G. Q. Yang. "Microstructure of TiN films and interfaces formed by ion-beam-enhanced deposition and simple physical vapor deposition." Journal of Materials Research 10, no. 4 (April 1995): 995–99. http://dx.doi.org/10.1557/jmr.1995.0995.

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The microstructure and composition of TiN films, formed by ion beam enhanced deposition (IBED) with different energy (40 keV and 90 keV) xenon ion bombardment and by simple physical vapor deposition (hereafter S-PVD) without any ion beam enhancement, and the interfaces between TiN films and Si substrates have been studied by cross-sectional view analytical electron microscopy in this work. Both the IBED TiN films prepared by Xe+ bombardment with either 40 keV or 90 keV energy ions and the S-PVD TiN film consist of nanocrystals. The TEM observations in the S-PVD case reveal an amorphous layer and a mixed layer of TiN grains and amorphous material at the TiN/Si interface. The thicknesses of the amorphous layer and the mixed layer are about 210 nm and at least 40 nm, respectively. Upon 40 keV Xe+ bombardment, an amorphous Si transition layer of about 50 nm thickness is found at the TiN/Si interface, and the TiN grains close to the TiN/Si interface are of weak preferred orientation. Upon 90 keV Xe+ bombardment, amorphous TiN and Si layers are found with a total thickness of 80 nm at the TiN/Si interface, and the TiN grains near the TiN/Si interface are of preferred orientation [111]TiN ‖ [001]Si. The energy of xenon ion bombardment has a strong effect on the microstructural characteristics of TiN films and the interfaces between the TiN films and the Si substrates, as well as the size and the preferred orientation of TiN grains.

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7

Roy, M., P. Sengupta, A. K. Tyagi, and G. B. Kale. "Investigations on Silicon/Amorphous-Carbon and Silicon/Nanocrystalline Palladium/Amorphous-Carbon Interfaces." Journal of Nanoscience and Nanotechnology 8, no. 8 (August 1, 2008): 4295–302. http://dx.doi.org/10.1166/jnn.2008.an37.

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Our previous work revealed that significant enhancement in sp3-carbon content of amorphous carbon films could be achieved when grown on nanocrystalline palladium interlayer as compared to those grown on bare silicon substrates. To find out why, the nature of interface formed in both the cases has been investigated using Electron Probe Micro Analysis (EPMA) technique. It has been found that a reactive interface in the form of silicon carbide and/silicon oxy-carbide is formed at the interface of silicon/amorphous-carbon films, while palladium remains primarily in its native form at the interface of nanocrystalline palladium/amorphous-carbon films. However, there can be traces of dissolved oxygen within the metallic layer as well. The study has been corroborated further from X-ray photoelectron spectroscopic studies.

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8

Herth, S., H. Rösner, A. A. Rempel, H. E. Schaefer, and R. Würschum. "Positrons as chemically sensitive probes in interfaces of multicomponent complex materials: Nanocrystalline Fe₉₀Zr₇B₃." International Journal of Materials Research 94, no. 10 (October 1, 2003): 1073–78. http://dx.doi.org/10.1515/ijmr-2003-0196.

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Abstract The present paper reports on a combined analytical and structural study of nanocrystalline Fe90Zr7B3 by means of positron annihilation, (analytical) high-resolution transmission electron microscopy (HRTEM), and X-ray diffraction. Particular focus is laid on the chemical nature of the intergranular amorphous matrix which occurs between the α-Fe nanocrystallites. Energy-dispersive X-ray measurements (EDX) with an electron nanobeam reveal an increased Zr content at the interface between the nanocrystallites and the intergranular amorphous phase. According to positron lifetime measurements, the intergranular amorphous phase and the interfaces between this phase and the nanocrystallites exhibit structural free volumes of the mean size slightly smaller than a lattice vacancy as in the amorphous precursor material. Coincident Doppler broadening measurements of the positron-electron annihilation photons show that the fraction of Zr in the neighborhood of the structural free volumes is higher in nanocrystalline Fe90Zr7B3 than in the amorphous state indicating an enhanced Zr concentration in the interfaces. These results are in good agreement with the HRTEM/ EDX studies and demonstrate the potentials of the coincident Doppler broadening technique for a chemical characterization of structurally complex materials on an atomistic scale.

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9

Hohensee, Gregory T., Mousumi M. Biswas, Ella Pek, Chris Lee, Min Zheng, Yingmin Wang, and Chris Dames. "Pump-probe thermoreflectance measurements of critical interfaces for thermal management of HAMR heads." MRS Advances 2, no. 58-59 (2017): 3627–36. http://dx.doi.org/10.1557/adv.2017.503.

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ABSTRACT For heat-assisted magnetic recording (HAMR) heads, a major reliability limiter is the peak near-field transducer (NFT) temperature. Since the NFT is nanoscale, heat sinking is controlled by materials and interfaces within a few 100 nm of the NFT. Heat sinks can be metallic to take advantage of the 10x-100x higher thermal boundary conductance (TBC) of metal/metal interfaces, versus nonmetal interfaces. Oxide formation at these interfaces can greatly decrease the TBC and contribute to NFT failure. Likewise, the thermal resistance of material between the NFT and media recording layer greatly influences the NFT operating temperature. Here we use pump-probe thermoreflectance techniques (FDTR, TDTR) to study metal-metal interfaces and detect partial oxidation of a buried metallic thin film, as well as evaluate the interface thermal conductance of amorphous-amorphous interfaces in a film stack representative of a HAMR head-media interface.

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10

Avishai, Amir, Christina Scheu, and Wayne D. Kaplan. "Amorphous Films at Metal/Ceramic Interfaces." Zeitschrift für Metallkunde 94, no. 3 (March 2003): 272–76. http://dx.doi.org/10.3139/146.030272.

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11

Willett, Julious L., and Richard P. Wool. "Strength of incompatible amorphous polymer interfaces." Macromolecules 26, no. 20 (September 1993): 5336–49. http://dx.doi.org/10.1021/ma00072a010.

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12

Edelstein, A. S., D. J. Gillespie, S. F. Cheng, J. H. Perepezko, and K. Landry. "Reactions at amorphous SiC/Ni interfaces." Journal of Applied Physics 85, no. 5 (March 1999): 2636–41. http://dx.doi.org/10.1063/1.369580.

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13

Gunderov, Dmitry, and Vasily Astanin. "Influence of HPT Deformation on the Structure and Properties of Amorphous Alloys." Metals 10, no. 3 (March 23, 2020): 415. http://dx.doi.org/10.3390/met10030415.

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Recent studies showed that structural changes in amorphous alloys under high pressure torsion (HPT) are determined by their chemical composition and processing regimes. For example, HPT treatment of some amorphous alloys leads to their nanocrystallization; in other alloys, nanocrystallization was not observed, but structural transformations of the amorphous phase were revealed. HPT processing resulted in its modification by introducing interfaces due to the formation of shear bands. In this case, the alloys after HPT processing remained amorphous, but a cluster-type structure was formed. The origin of the observed changes in the structure and properties of amorphous alloys is associated with the chemical separation and evolution of free volume in the amorphous phase due to the formation of a high density of interfaces as a result of HPT processing. Amorphous metal alloys with a nanocluster structure and nanoscale inhomogeneities, representatives of which are nanoglasses, significantly differ in their physical and mechanical properties from conventional amorphous materials. The results presented in this review show that the severe plastic deformation (SPD) processing can be one of the efficient ways for producing a nanocluster structure and improving the properties of amorphous alloys.

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14

Ko, Dae-Hong, and Robert Sinclair. "Amorphous-phase formation and initial reactions at Pt/GaAs interfaces." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 858–59. http://dx.doi.org/10.1017/s0424820100088609.

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It is now well known that many metals form a l-2nm amorphous interdiffused layer when deposited onto clean Si surface, which grows upon annealing in some systems but crystallizes into stable, or metastable, phases in others. Such behavior can be interpreted in terms of a solid-state amorphization, driven by a negative heat of mixing of the elements with the amorphous phase produced for kinetic reasons. Some metal/compound semiconductor systems also show the same reaction behavior. Though there have been some reports, using electron diffraction, on the amorphous phase formation at metal-compound semiconductor interface upon low temperature annealing, because the expected thickness might only be several atomic layers, it is clear that high resolution transmission electron microscopy (HRTEM) is the most powerful technique to study such a phase. This article reports on the amorphous phase formation and the initial stages of reaction occuring at Pt/GaAs interfaces upon annealing with HRTEM, and this is the most direct demonstration of solid state amorphization of a metal with a compound semiconductor.

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15

Campbell, A. N., J. C. Barbour, C. R. Hills, and M. Nastasi. "The formation of amorphous Ni–B by solid state and ion-beam reaction." Journal of Materials Research 4, no. 6 (December 1989): 1303–6. http://dx.doi.org/10.1557/jmr.1989.1303.

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An amorphous Ni–B alloy was formed at the interfaces between layers of polycrystalline nickel and amorphous boron during electron-beam deposition of Ni/B/Ni trilayer structures. Formation of the amorphous alloy appears to be thermally-assisted and, in addition, the amorphous alloy regions can be extended by post-deposition ion-beam mixing. The existence of an upper limit to the thickness of the amorphous Ni–B alloy layer which forms (40 nm) indicates that the amorphous layer serves as a reaction or diffusion barrier. It has been shown for the first time that an amorphous metal-boron alloy is produced by thermal solid state amorphization reaction (SSAR).

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16

Li, Jiongxian, Yinong Shi, and Xiuyan Li. "Pulse Electrodeposited Ni-26 at. %Mo—A Crossover from Nanocrystalline to Amorphous." Nanomaterials 11, no. 3 (March 9, 2021): 681. http://dx.doi.org/10.3390/nano11030681.

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A Ni-26 at. %Mo alloy with a composite structure of nanocrystalline and amorphous was synthesized by pulse electrodeposition. The composite structure was composed of mixed regions of amorphous and nanograins divided by a nanocrystalline interface network, which significantly suppressed grain coarsening and shear banding that would otherwise deteriorate mechanical properties of extremely fine nanograined metal. Plastic strain induced significant crystallization accompanied by Mo diffusion from mixed regions to nanograined interfaces. As a result, the Ni-26 at. %Mo alloy exhibited a superior hardness to its nanograined counterparts. The present work demonstrates an example of enhancing mechanical performance with hybrid structures crossover from nanocrystalline to amorphous.

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17

Lee, Hyun-Yong, Seon-Ju Kim, Jin-Woo Kim, and Hong-Bay Chung. "Photoinduced phase transformations in amorphous ZnSe thin films: amorphous-to-amorphous and amorphous-to-nanocrystalline transitions." Thin Solid Films 441, no. 1-2 (September 2003): 214–22. http://dx.doi.org/10.1016/s0040-6090(03)00866-6.

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18

Sattler, Margaret L., and Michael A. O'Keefe. "HRTEM simulation of interfacial structure in amorphous multilayers." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 466–67. http://dx.doi.org/10.1017/s0424820100154305.

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Multilayered materials have been fabricated with such high perfection that individual layers having two atoms deep are possible. Characterization of the interfaces between these multilayers is achieved by high resolution electron microscopy and Figure 1a shows the cross-section of one type of multilayer. The production of such an image with atomically smooth interfaces depends upon certain factors which are not always reliable. For example, diffusion at the interface may produce complex interlayers which are important to the properties of the multilayers but which are difficult to observe. Similarly, anomalous conditions of imaging or of fabrication may occur which produce images having similar traits as the diffusion case above, e.g., imaging on a tilted/bent multilayer sample (Figure 1b) or deposition upon an unaligned substrate (Figure 1c). It is the purpose of this study to simulate the image of the perfect multilayer interface and to compare with simulated images having these anomalies.

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19

Shieh, P. C., and J. M. Howe. "Investigation of the atomic structure of crystal/amorphous interfaces in Pd80Si20 Alloy by HRTEM and image simulations." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (August 1990): 114–15. http://dx.doi.org/10.1017/s0424820100173704.

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Determining the atomic structures of solid/liquid interfaces is important for understanding mechanisms of solidification of crystalline materials. To date, research in this area has largely been theoretical in nature because of the difficulty of determining the atomic structure of a solid/liquid interface experimentally. This study has employed HRTEM and image simulations to investigate the atomic structure of crystalline/amorphous interfaces in directionally crystallized Pd80Si20 amorphous ribbons. The crystalline/amorphous interface is similar to a solid/liquid interface in many respects. The HRTEM analyses of directionally crystallized samples have shown that the amorphous Pd80Si20 alloy crystallizes into a lamellar mixture of faceted Pd3Si and nonfaceted Pd9Si2. Interpretation of the HRTEM images requires knowledge of the visibility of ordered structures imbedded in amorphous surroundings. This paper reports the results of a computer simulation study undertaken to determine this visibility.Computer simulations were performed in two parts: 1) construction of a model atomic structure, and 2) simulation of HRTEM images of the model structure. The atomic model was started with a crystalline seed of Pd3Si several unit-cells thick and new atoms were deposited on to the seed according to the dense random packing model for metal-metalloid systems. A unit cell of appropriate size was cut from the resulting composite structure and sliced into layers for input into the image simulations. The HRTEM images were calculated using the TEMPAS multislice program with the following parameters for a JEOL 4000EX: 400kV accelerating potential, 1.0 mm spherical aberration coefficient, 5.0 nm half-width of Gaussian spread of defocus, 0.5 mrad semi-angle of beam convergence, 6.5 nm−1 objective aperture radius, −50.0 nm defocus (near Scherzer defocus) and diffracted beams out to 4.0 nm−1

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20

Arizmendi-Morquecho, Ana, Araceli Campa-Castilla, C. Leyva-Porras, Josué Almicar Aguilar Martinez, Gregorio Vargas Gutiérrez, Karla Judith Moreno Bello, and L. López López. "Microstructural Characterization and Wear Properties of Fe-Based Amorphous-Crystalline Coating Deposited by Twin Wire Arc Spraying." Advances in Materials Science and Engineering 2014 (2014): 1–11. http://dx.doi.org/10.1155/2014/836739.

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Twin wire arc spraying (TWAS) was used to produce an amorphous crystalline Fe-based coating on AISI 1018 steel substrate using a commercial powder (140MXC) in order to improve microhardness and wear properties. The microstructures of coating were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) as well as the powder precursor. Analysis in the coating showed the formation of an amorphous matrix with boron and tungsten carbides randomly dispersed. At high amplifications were identified boron carbides at interface boron carbide/amorphous matrix by TEM. This kind of carbides growth can be attributed to partial crystallization by heterogeneous nucleation. These interfaces have not been reported in the literature by thermal spraying process. The measurements of average microhardness on amorphous matrix and boron carbides were 9.1 and 23.85 GPa, respectively. By contrast, the microhardness values of unmelted boron carbide in the amorphous phase were higher than in the substrate, approaching 2.14 GPa. The relative wear resistance of coating was 5.6 times that of substrate. These results indicate that the twin wire arc spraying is a promising technique to prepare amorphous crystalline coatings.

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21

Zhan, T., Y. Xu, M. Goto, Y. Tanaka, R. Kato, and M. Sasaki. "Thermal boundary resistance at Au/Ge/Ge and Au/Si/Ge interfaces." RSC Adv. 5, no. 61 (2015): 49703–7. http://dx.doi.org/10.1039/c5ra04412j.

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22

Zhang, Haoran, Shanlin Wang, Hongxiang Li, Shuaixing Wang, and Yuhua Chen. "Effect of Oxidation and Crystallization on Pitting Initiation Behavior of Fe-Based Amorphous Coatings." Coatings 12, no. 2 (January 29, 2022): 176. http://dx.doi.org/10.3390/coatings12020176.

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Fe-based amorphous coatings are typically fabricated by high-velocity oxygen-fuel spraying using industrial raw materials. The bonding mode between the coating particles and the corrosion mechanism of the coating in the chloride-rich environment were studied. The results indicate that some fine crystallites such as α-Fe and Fe3C tend to precipitate from the amorphous matrix as the kerosene flow rate increases or the travel speed of spraying gun decreases. Moreover, some precipitates of the (Cr, Fe)2O3 nanocrystal were detected in the metallurgical interfaces of the amorphous coating. The relationship among the amorphous volume fraction, porosity, and spraying parameters, such as the kerosene flow rate and the travel speed of the spray gun, were established. Due to an oxidation effect during spraying process, atomic diffusion, crystallite precipitation and regional depletion of Cr occur in the area along the pre-deposited side near the metallurgical bonding interface, leading to the initiation of pitting. A model of pitting initiation and expansion of Fe-based amorphous coatings is proposed in this paper.

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23

El-Ghor, M. K., O. W. Holland, C. W. White, and S. J. Pennycook. "Structural characterization of damage in Si(100) produced by MeV Si+ ion implantation and annealing." Journal of Materials Research 5, no. 2 (February 1990): 352–59. http://dx.doi.org/10.1557/jmr.1990.0352.

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Buried amorphous layers were produced by implantation of MeV Si+ ions in silicon single crystal at room temperature and liquid nitrogen temperature. The damage is characterized structurally both in the as-implanted condition and after post-implantation furnace annealing. Growth of the amorphous layer during room temperature implantation is found to occur by a layer-by-layer mechanism with relatively sharp interfacial transition regions. A wide region ahead of the buried amorphous region extending to the surface is observed to be free of any extended defects. Recrystallization of the damaged region during thermal annealing occurs by solid-phase epitaxial growth at both interfaces. A lower growth velocity is found at the upper interface, which is attributed to a higher hairpin dislocation density grown-in at this interface. Results of irradiation at liquid nitrogen temperature, on the other hand, show that nucleation and growth of the amorphous damage occurs over a wide region and is not confined to the interfacial region. This results in a very diffuse upper interface composed of a mixture of amorphous and crystalline phases. Substantial reordering is observed in this mixed-phase region after 400°C annealing, even though this temperature is too low for normal interfacial solid-phase epitaxial growth. Cross-sectional transmission electron microscopy, as well as Rutherford backscattering spectroscopy, were used in this study.

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24

Boiko, Yuri M. "Impact of Crystallization on the Development of Statistical Self-Bonding Strength at Initially Amorphous Polymer–Polymer Interfaces." Polymers 14, no. 21 (October 25, 2022): 4519. http://dx.doi.org/10.3390/polym14214519.

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To investigate the mechanisms of the adhesion (self-bonding) strength (s) development during the early stages of self-healing of polymer–polymer interfaces and fracture thereof, it is useful to operate not only with the average s value but with the s distribution as well. The latter has been shown to obey Weibull’s statistics for such interfaces. However, whether it can also follow the most widely used normal (Gaussian) distribution is currently unclear. Moreover, a more complicated self-healing case, when the s development at an initially amorphous interface is accompanied by its crystallization, has not been investigated yet in this respect. In order to address these two important issues, 10 pairs of amorphous poly(ethylene terephthalate) (PET) samples were kept in contact for various periods of time from 5 min to 15 h at a temperature (T) of 94 °C (preserving the amorphous state) or T = 150 °C (giving rise to cold crystallization), or both Ts. Thereafter, the as-formed amorphous and semi-crystalline PET–PET auto-adhesive joints were shear fractured in tension at ambient temperature. For the first time, the statistical distributions of a number of the measured s data sets were analyzed and discussed using both Weibull’s and the Gaussian model, including several normality tests.

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25

Zhang, Ming, Y. F. Xu, and W. K. Wang. "Amorphous phase appearance at NbSi interfaces." Journal of Non-Crystalline Solids 219 (October 1997): 84–88. http://dx.doi.org/10.1016/s0022-3093(97)00258-5.

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26

Persans, Peter D. "Vibrational Raman studies of amorphous solid interfaces." Physical Review B 39, no. 3 (January 15, 1989): 1797–807. http://dx.doi.org/10.1103/physrevb.39.1797.

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27

Kaplan, Wayne D., and Amir Avishai. "Equilibrium Amorphous Films at Metal-Ceramic Interfaces." Microscopy and Microanalysis 10, S02 (August 2004): 274–75. http://dx.doi.org/10.1017/s1431927604880206.

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28

Wool, R. P. "Properties and Entanglements of Amorphous Polymer Interfaces." Journal of Elastomers & Plastics 17, no. 2 (April 1985): 106–18. http://dx.doi.org/10.1177/009524438501700203.

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29

Miyazaki, Seiichi, Yuzo Kohda, Yasushi Hazama, and Masataka Hirose. "Structural characterization of amorphous silicon multilayer interfaces." Journal of Non-Crystalline Solids 114 (December 1989): 774–76. http://dx.doi.org/10.1016/0022-3093(89)90716-3.

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30

Zhu, Y. J., R. Jiang, Z. W. Zhang, J. Zhao, Y. Chen, Y. L. Li, and B. Y. Ding. "Sample preparation and research of amorphous composite material for transmission electron microscope." Journal of Physics: Conference Series 2256, no. 1 (April 1, 2022): 012018. http://dx.doi.org/10.1088/1742-6596/2256/1/012018.

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Abstract The two preparation methods of amorphous composite TEM samples, electrolytic double spray thinning and ion thinning, are studied. In addition, an improved ion thinning method is used to successfully prepare a metastable brittle amorphous composite TEM sample. The TEM sample prepared by the ion thinning method has a large thin area near the interfaces in composites, which lays a solid foundation for further research on the interface principle of composite materials, and also provides reliable data support for optimizing the preparation process of the composite materials.

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31

Федоров, В. А., А. Д. Березнер, А. И. Бескровный, Т. Н. Фурсова, А. В. Павликов та А. В. Баженов. "Структура и свойства пленок SiO-=SUB=-x-=/SUB=-, полученных химическим травлением лент аморфного сплава". Физика твердого тела 60, № 4 (2018): 701. http://dx.doi.org/10.21883/ftt.2018.04.45678.271.

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AbstractThe structure and the physical properties of amorphous SiO_ x films prepared by chemical etching of an iron-based amorphous ribbon alloy have been studied. The neutron diffraction and also the atomicforce and electron microscopy show that the prepared visually transparent films have amorphous structure, exhibit dielectric properties, and their morphology is similar to that of opals. The samples have been studied by differential scanning calorimetry, Raman and IR spectroscopy before and after their heat treatment. It is found that annealing of the films in air at a temperature of 1273 K leads to a change in their chemical compositions: an amorphous SiO_2 compound with inclusions of SiO_2 nanocrystals (crystobalite) forms.

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32

Doan, Dinh-Quan, Van-Tuan Chu, Anh-Son Tran, Anh-Vu Pham, Hong-Son Vu, Thanh-Nhan Nguyen, Van-Han Hoang, and The-Tan Pham. "The role of interfaces on mechanical property and wear behavior of amorphous/amorphous nanomultilayers." Journal of Non-Crystalline Solids 605 (April 2023): 122152. http://dx.doi.org/10.1016/j.jnoncrysol.2023.122152.

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33

Kannan, V. C. "Fresnel fringe contrast in the TEM: Application to study the microstructure of amorphous silicon." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 1000–1001. http://dx.doi.org/10.1017/s0424820100089317.

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Amorphous silicon-hydrogen (α - Si:H) alloy films deposited by plasma enhanced chemical vapor deposition (PECVD) of silane exhibit a remarkable property; namely, the films are practically insulators in the as deposited state. When sandwiched between two metals or highly conductive refractory metal silicides, the films can be converted to near conductivity state by “programming” the sandwich structure to complete dielectric breakdown of the insulator. Such α - Si:H films are used in permanently programmable integrated circuits such as PGA (Programmable Gate Arrays) as “antifuse” materials.TEM technique has, usually, limited application to study the microstructure of amorphous materials since they do not exhibit the well understood diffraction contrast as seen in crystalline materials. However, Fresnel fringe contrast due to electron interference effects at either sides of interfaces or at the edges can be used to provide the sort of information needed to characterize amorphous films. The profiles of Fresnel fringes are often complex for interface thickness of <100 A and their shape and contrast are very sensitive to compositional changes on either sides of the interfaces.

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34

Termentzidis, Konstantinos, Maxime Verdier, and David Lacroix. "Effect of Amorphisation on the Thermal Properties of Nanostructured Membranes." Zeitschrift für Naturforschung A 72, no. 2 (February 1, 2017): 189–92. http://dx.doi.org/10.1515/zna-2016-0384.

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AbstractThe majority of the silicon devices contain amorphous phase and amorphous/crystalline interfaces which both considerably affect the transport of energy carriers as phonons and electrons. In this article, we investigate the impact of amorphous phases (both amorphous silicon and amorphous SiO2) of silicon nanoporous membranes on their thermal properties via molecular dynamics simulations. We show that a small fraction of amorphous phase reduces dramatically the thermal transport. One can even create nanostructured materials with subamorphous thermal conductivity, while keeping an important crystalline fraction. In general, the a-SiO2 shell around the pores reduces the thermal conductivity by a factor of five to ten compared to a-Si shell. The phonon density of states for several systems is also given to give the impact of the amorphisation on the phonon modes.

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35

Wei, Bingqiang, Lin Li, Lin Shao, and Jian Wang. "Crystalline–Amorphous Nanostructures: Microstructure, Property and Modelling." Materials 16, no. 7 (April 4, 2023): 2874. http://dx.doi.org/10.3390/ma16072874.

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Crystalline metals generally exhibit good deformability but low strength and poor irradiation tolerance. Amorphous materials in general display poor deformability but high strength and good irradiation tolerance. Interestingly, refining characteristic size can enhance the flow strength of crystalline metals and the deformability of amorphous materials. Thus, crystalline–amorphous nanostructures can exhibit an enhanced strength and an improved plastic flow stability. In addition, high-density interfaces can trap radiation-induced defects and accommodate free volume fluctuation. In this article, we review crystalline–amorphous nanocomposites with characteristic microstructures including nanolaminates, core–shell microstructures, and crystalline/amorphous-based dual-phase nanocomposites. The focus is put on synthesis of characteristic microstructures, deformation behaviors, and multiscale materials modelling.

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36

Georgarakis, Konstantinos, Dina V. Dudina, and Vyacheslav I. Kvashnin. "Metallic Glass-Reinforced Metal Matrix Composites: Design, Interfaces and Properties." Materials 15, no. 23 (November 22, 2022): 8278. http://dx.doi.org/10.3390/ma15238278.

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When metals are modified by second-phase particles or fibers, metal matrix composites (MMCs) are formed. In general, for a given metallic matrix, reinforcements differing in their chemical nature and particle size/morphology can be suitable while providing different levels of strengthening. This article focuses on MMCs reinforced with metallic glasses and amorphous alloys, which are considered as alternatives to ceramic reinforcements. Early works on metallic glass (amorphous alloy)-reinforced MMCs were conducted in 1982–2005. In the following years, a large number of composites have been obtained and tested. Metallic glass (amorphous alloy)-reinforced MMCs have been obtained with matrices of Al and its alloys, Mg and its alloys, Ti alloys, W, Cu and its alloys, Ni, and Fe. Research has been extended to new compositions, new design approaches and fabrication methods, the chemical interaction of the metallic glass with the metal matrix, the influence of the reaction products on the properties of the composites, strengthening mechanisms, and the functional properties of the composites. These aspects are covered in the present review. Problems to be tackled in future research on metallic glass (amorphous alloy)-reinforced MMCs are also identified.

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37

Gao, F., R. Devanathan, Y. Zhang, M. Posselt, and W. J. Weber. "Atomic-level simulation of epitaxial recrystallization and phase transformation in SiC." Journal of Materials Research 21, no. 6 (June 1, 2006): 1420–26. http://dx.doi.org/10.1557/jmr.2006.0176.

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A nano-sized amorphous layer embedded in an atomic simulation cell was used to study the amorphous-to-crystalline (a-c) transition and subsequent phase transformation by molecular-dynamics computer simulations in 3C–SiC. The recovery of bond defects at the interfaces is an important process driving the initial epitaxial recrystallization of the amorphous layer, which is hindered by the nucleation of a polycrystalline 2H–SiC phase. The kink sites and triple junctions formed at the interfaces between 2H– and 3C–SiC provide low-energy paths for 2H–SiC atoms to transform to 3C–SiC atoms. The spectrum of activation energies associated with these processes ranges from below 0.8 eV to about 1.9 eV.

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38

Srivastava, A. P., M. Srinivas, S. Sharma, Dinesh Srivastava, B. Majumdar, P. K. Pujari, G. K. Dey, and K. G. Suresh. "Positron Annihilation Spectroscopy of Nanocrystallized Iron Based Metallic Glass." Advanced Materials Research 67 (April 2009): 19–24. http://dx.doi.org/10.4028/www.scientific.net/amr.67.19.

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Amorphous ribbons of composition Fe68.5Cu1Nb3Si18.5B9 were produced by melt spun unit. Positron annihilation technique along with DSC and XRD studies has been employed to characterize the nanocrystallization process. XRD results confirmed presence of Fe3Si and Fe2B phases. Two life time components could be fitted to life time spectra of amorphous and heat treated samples. Life time of positron in amorphous matrix was found to be 163.3 ps. Small life time components in nanocrystallized samples could be ascribed to positron annihilation within amorphous and nanocrystalline particles. Larger life time component could be attributed to positron annihilation in interfaces associated with primary and secondary phase particles.

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39

Batstone, J. L., and D. A. Smith. "Interface motion during recrystallization of amorphous NiSi2." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (August 1990): 524–25. http://dx.doi.org/10.1017/s0424820100175752.

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Recrystallization of amorphous NiSi2 involves nucleation and growth processes which can be studied dynamically in the electron microscope. Previous studies have shown thatCoSi2 recrystallises by nucleating spherical caps which then grow with a constant radial velocity. Coalescence results in the formation of hyperbolic grain boundaries. Nucleation of the isostructural NiSi2 results in small, approximately round grains with very rough amorphous/crystal interfaces. In this paper we show that the morphology of the rccrystallizcd film is dramatically affected by variations in the stoichiometry of the amorphous film.Thin films of NiSi2 were prepared by c-bcam deposition of Ni and Si onto Si3N4, windows supported by Si substrates at room temperature. The base pressure prior to deposition was 6 × 107 torr. In order to investigate the effect of stoichiomctry on the recrystallization process, the Ni/Si ratio was varied in the range NiSi1.8-2.4. The composition of the amorphous films was determined by Rutherford Backscattering.

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40

Heijmans, Koen, Amar Deep Pathak, Pablo Solano-López, Domenico Giordano, Silvia Nedea, and David Smeulders. "Thermal Boundary Characteristics of Homo-/Heterogeneous Interfaces." Nanomaterials 9, no. 5 (April 26, 2019): 663. http://dx.doi.org/10.3390/nano9050663.

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The interface of two solids in contact introduces a thermal boundary resistance (TBR), which is challenging to measure from experiments. Besides, if the interface is reactive, it can form an intermediate recrystallized or amorphous region, and extra influencing phenomena are introduced. Reactive force field Molecular Dynamics (ReaxFF MD) is used to study these interfacial phenomena at the (non-)reactive interface. The non-reactive interfaces are compared using a phenomenological theory (PT), predicting the temperature discontinuity at the interface. By connecting ReaxFF MD and PT we confirm a continuous temperature profile for the homogeneous non-reactive interface and a temperature jump in case of the heterogeneous non-reactive interface. ReaxFF MD is further used to understand the effect of chemical activity of two solids in contact. The selected Si/SiO 2 materials showed that the TBR of the reacted interface is two times larger than the non-reactive, going from 1 . 65 × 10 - 9 to 3 . 38 × 10 - 9 m 2 K/W. This is linked to the formation of an intermediate amorphous layer induced by heating, which remains stable when the system is cooled again. This provides the possibility to design multi-layered structures with a desired TBR.

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41

Nolan, Michael, Merid Legesse, and Giorgos Fagas. "Surface orientation effects in crystalline–amorphous silicon interfaces." Physical Chemistry Chemical Physics 14, no. 43 (2012): 15173. http://dx.doi.org/10.1039/c2cp42679j.

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42

Böhmer, E., and H. Lüth. "Photoelectron spectroscopy studies of microcrystalline/amorphous silicon interfaces." Journal of Non-Crystalline Solids 266-269 (May 2000): 1038–43. http://dx.doi.org/10.1016/s0022-3093(99)00901-1.

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43

Persans, P. D., A. F. Ruppert, B. Abeles, and T. Tiedje. "Raman scattering study of amorphous Si-Ge interfaces." Physical Review B 32, no. 8 (October 15, 1985): 5558–60. http://dx.doi.org/10.1103/physrevb.32.5558.

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44

Olibet, Sara, Evelyne Vallat-Sauvain, Luc Fesquet, Christian Monachon, Aïcha Hessler-Wyser, Jérôme Damon-Lacoste, Stefaan De Wolf, and Christophe Ballif. "Properties of interfaces in amorphous/crystalline silicon heterojunctions." physica status solidi (a) 207, no. 3 (March 2010): 651–56. http://dx.doi.org/10.1002/pssa.200982845.

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45

Neitzert, H. C., and M. Briere. "Hydrogen profiles of interfaces in amorphous silicon devices." Journal of Non-Crystalline Solids 115, no. 1-3 (December 1989): 75–77. http://dx.doi.org/10.1016/0022-3093(89)90365-7.

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46

Iaseniuc, Oxana, and Mihail Iovu. "Absorption and photoconductivity spectra of amorphous multilayer structures." Beilstein Journal of Nanotechnology 11 (November 20, 2020): 1757–63. http://dx.doi.org/10.3762/bjnano.11.158.

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The experimental results regarding optical absorption and steady-state photoconductivity of amorphous single-layer structures (Al–As0.40S0.30Se0.30–Al, Al–Ge0.09As0.09Se0.82–Al, and Al–Ge0.30As0.04S0.66–Al) and of an amorphous heterostructure (Al–As0.40S0.30Se0.30/Ge0.09As0.09Se0.82/Ge0.30As0.04S0.66–Al) at different values of the voltage, with positive or negative polarity, applied to the illuminated top Al electrode are presented and discussed. The complex structure of the photocurrent spectra is attributed to the different values of the optical bandgap of the involved amorphous layers (E g ≈ 2.0 eV for As0.40S0.30Se0.30 and Ge0.09As0.09Se0.82 and E g ≈ 3.0 eV for Ge0.30As0.04S0.66). The obtained experimental results are discussed taking into account the light absorption depending on the nature and the thickness of each amorphous layer, on the wavelength, and on contact phenomena at the interfaces between different layers and between the amorphous layers and the metal electrodes with different work functions.

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47

De Avillez, R. R., L. A. Clevenger, C. V. Thompson, and K. N. Tu. "Quantitative investigation of titanium/amorphous-silicon multilayer thin film reactions." Journal of Materials Research 5, no. 3 (March 1990): 593–600. http://dx.doi.org/10.1557/jmr.1990.0593.

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Growth of amorphous-titanium-silicidc and crystalline C49 TiSi2 in titanium/amorphous-silicon multilayer films was investigated using a combination of differential scanning calorimetry (DSC), thin film x-ray diffraction, Auger depth profiling, and cross-sectional transmission electron microscopy. The multilayer films had an atomic concentration ratio of 1Ti to 2Si and a modulation period of 30 nm. In the as-deposited condition, a thin amorphous-titanium-silicide layer was found to exist between the titanium and silicon layers. Heating the multilayer film from room temperature to 700 K caused the release of an exothermic heat over a broad temperature range and an endothermic heat over a narrow range. The exothermic hump was attributed to thickening of the amorphous-titanium silicide layer, and the endothermic step was attributed to the homogenization and/or densification of the amorphous-silicon and amorphous-titanium-silicide layers. An interpretation of previously reported data for growth of amorphous-titanium-silicide indicates an activation energy of 1.0 ± 0.1 eV and a pre-exponential coefficient of 1.9 × 10−7 cm2/s. Annealing at high temperatures caused formation of C49 TiSi2 at the amorphous-titanium-silicide/amorphous-silicon interfaces with an activation energy of 3.1 ± 0.1 eV. This activation energy was attributed to both the nucleation and the early stages of growth of C49 TiSi2. The heat of formation of C49 TiSi2 from a reaction of amorphous-titanium-silicide and crystalline titanium was found to be –25.8 ± 8.8 kJ/mol and the heat of formation of amorphous-titanium-silicide was estimated to be –130.6 kJ/mol.

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48

Schaal, M., P. Lamparter, and S. Steeb. "Fractal Behaviour of Amorphous Ni32Pd52P16 Studied by SANS." Zeitschrift für Naturforschung A 44, no. 1 (January 1, 1989): 4–6. http://dx.doi.org/10.1515/zna-1989-0102.

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Abstract Small angle neutron scattering (SANS) was done with meltspun amorphous Ni32Pd52P16 in the as-quenched state as well as after annealing at 533 K, 570 K. and 607 K, 20 h each. The double logarithmic plot of the structure factor versus the momentum transfer shows linear behaviour with noninteger Porod-slopes. The results are interpreted with the scattering from fractally rough inner surfaces.The as-quenched state contains fluctuations of the scattering length density associated with smooth boundary interfaces. Annealing yields rough boundary interfaces, the roughness being largest after the 570 K annealing. Annealing at the higher temperature of 607 K yields less rough boundary interfaces.

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49

Wang, Qiang, Peng Han, Shuo Yin, Wen-Juan Niu, Le Zhai, Xu Li, Xuan Mao, and Yu Han. "Current Research Status on Cold Sprayed Amorphous Alloy Coatings: A Review." Coatings 11, no. 2 (February 11, 2021): 206. http://dx.doi.org/10.3390/coatings11020206.

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Compared with traditional crystalline materials, amorphous alloys have excellent corrosion and wear resistance and high elastic modulus, due to their unique short-range ordered and long-range disordered atomic arrangement as well as absence of defects, such as grain boundaries and dislocations. Owing to the limitation of the bulk size of amorphous alloys as structural materials, the application as functional coatings can widely extend their use in various engineering fields. This review first briefly introduces the problems involved during high temperature preparation processes of amorphous coatings, including laser cladding and thermal spraying. Cold spray (CS) is characterized by a low-temperature solid-state deposition, and thus the oxidation and crystallization related with a high temperature environment can be avoided during the formation of coatings. Therefore, CS has unique advantages in the preparation of fully amorphous alloy coatings. The research status of Fe-, Al-, Ni-, and Zr-based amorphous alloy coatings and amorphous composite coatings are reviewed. The influence of CS process parameters, and powders and substrate conditions on the microstructure, hardness, as well as wear and corrosion resistance of amorphous coatings is analyzed. Meanwhile, the deposition mechanism of amorphous alloy coatings is discussed by simulation and experiment. Finally, the key issues involved in the preparation of amorphous alloy coatings via CS technology are summarized, and the future development is also being prospected.

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50

Синицын, В. В., О. Г. Рыбченко, В. Б. Ефимов та А. А. Вирюс. "Аморфный лед средней плотности, полученный разложением водно-гелиевого геля". Физика твердого тела 65, № 8 (2023): 1307. http://dx.doi.org/10.21883/ftt.2023.08.56147.103.

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The article presents experimental studies of structural changes that occur during heating of nanosized powders of amorphous ice obtained by decay of a water-helium gel. Thermal annealing of the obtained samples was carried out by short exposures (about 15 minutes) at different temperatures in the range of 110-230K. The behavior of the amorphous phase during annealing was analyzed within the framework of its description by a mixture of amorphous ices of low and medium density (LDA and MDA, respectively). It was found that at the such description, the virgin sample was predominantly in the MDA state, while the proportion of the LDA phase was about 7 times less (MDA/LDA ≈ 7:1). It has been established that during annealing, a multistage process of structural transformations of the initial LDA + MDA sample takes place: from initial changes in the amorphous state at 110 K through crystallization of the cubic ice phase Ic with its intensive growth at a temperature of 130 K to the transformation of cubic ice into the hexagonal phase Ih in the temperature range T =135÷230K.

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