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Статті в журналах з теми "Amorphous-amorphous interfaces"
Huang, L., Z. Q. Chen, W. B. Liu, P. Huang, X. K. Meng, K. W. Xu, F. Wang, and T. J. Lu. "Enhanced irradiation resistance of amorphous alloys by introducing amorphous/amorphous interfaces." Intermetallics 107 (April 2019): 39–46. http://dx.doi.org/10.1016/j.intermet.2019.01.007.
Повний текст джерелаChu, V., M. Fang, and B. Drevillon. "Insituellipsometric study of amorphous silicon/amorphous silicon‐carbon interfaces." Journal of Applied Physics 69, no. 5 (March 1991): 3363–65. http://dx.doi.org/10.1063/1.348534.
Повний текст джерелаWei, Shaosheng, Xiaohua Yu, and Dehong Lu. "First-Principles Calculation of the Bonding Strength of the Al2O3-Fe Interface Enhanced by Amorphous Na2SiO3." Materials 15, no. 13 (June 22, 2022): 4415. http://dx.doi.org/10.3390/ma15134415.
Повний текст джерелаCésari, C., G. Nihoul, J. Marfaing, W. Marine, and B. Mutaftschiev. "Amorphous-crystalline interfaces after laser induced explosive crystallization in amorphous germanium." Surface Science Letters 162, no. 1-3 (October 1985): A613. http://dx.doi.org/10.1016/0167-2584(85)90329-9.
Повний текст джерелаCésari, C., G. Nihoul, J. Marfaing, W. Marine, and B. Mutaftschiev. "Amorphous-crystalline interfaces after laser induced explosive crystallization in amorphous germanium." Surface Science 162, no. 1-3 (October 1985): 724–30. http://dx.doi.org/10.1016/0039-6028(85)90972-0.
Повний текст джерелаCheng, Z. Y., Jing Zhu, X. H. Liu, Xi Wang, and G. Q. Yang. "Microstructure of TiN films and interfaces formed by ion-beam-enhanced deposition and simple physical vapor deposition." Journal of Materials Research 10, no. 4 (April 1995): 995–99. http://dx.doi.org/10.1557/jmr.1995.0995.
Повний текст джерелаRoy, M., P. Sengupta, A. K. Tyagi, and G. B. Kale. "Investigations on Silicon/Amorphous-Carbon and Silicon/Nanocrystalline Palladium/Amorphous-Carbon Interfaces." Journal of Nanoscience and Nanotechnology 8, no. 8 (August 1, 2008): 4295–302. http://dx.doi.org/10.1166/jnn.2008.an37.
Повний текст джерелаHerth, S., H. Rösner, A. A. Rempel, H. E. Schaefer, and R. Würschum. "Positrons as chemically sensitive probes in interfaces of multicomponent complex materials: Nanocrystalline Fe90Zr7B3." International Journal of Materials Research 94, no. 10 (October 1, 2003): 1073–78. http://dx.doi.org/10.1515/ijmr-2003-0196.
Повний текст джерелаHohensee, Gregory T., Mousumi M. Biswas, Ella Pek, Chris Lee, Min Zheng, Yingmin Wang, and Chris Dames. "Pump-probe thermoreflectance measurements of critical interfaces for thermal management of HAMR heads." MRS Advances 2, no. 58-59 (2017): 3627–36. http://dx.doi.org/10.1557/adv.2017.503.
Повний текст джерелаAvishai, Amir, Christina Scheu, and Wayne D. Kaplan. "Amorphous Films at Metal/Ceramic Interfaces." Zeitschrift für Metallkunde 94, no. 3 (March 2003): 272–76. http://dx.doi.org/10.3139/146.030272.
Повний текст джерелаДисертації з теми "Amorphous-amorphous interfaces"
Kast, Matthew. "Towards Tunable and Multifunctional Interfaces: Multicomponent Amorphous Alloys and Bilayer Stacks." Thesis, University of Oregon, 2017. http://hdl.handle.net/1794/22288.
Повний текст джерелаHassanali, Ali. "WATER AT MOLECULAR INTERFACES: STRUCTURE AND DYNAMICS NEAR BIOMOLECULES AND AMORPHOUS SILICA." The Ohio State University, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=osu1275314943.
Повний текст джерелаMews, Mathias [Verfasser], Bernd [Gutachter] Rech, i. Cabarrocas Pere [Gutachter] Roca, and Bernd [Gutachter] Szyszka. "Interfaces in amorphous/crystalline silicon heterojunction solar cells / Mathias Mews ; Gutachter: Bernd Rech, Pere Roca i Cabarrocas, Bernd Szyszka." Berlin : Technische Universität Berlin, 2016. http://d-nb.info/1156181437/34.
Повний текст джерелаRoss, Nick. "Interfacial Electrochemistry of Cu/Al Alloys for IC Packaging and Chemical Bonding Characterization of Boron Doped Hydrogenated Amorphous Silicon Films for Infrared Cameras." Thesis, University of North Texas, 2016. https://digital.library.unt.edu/ark:/67531/metadc849696/.
Повний текст джерелаLidbaum, Hans. "Transmission Electron Microscopy for Characterization of Structures, Interfaces and Magnetic Moments in Magnetic Thin Films and Multilayers." Doctoral thesis, Uppsala universitet, Experimentell fysik, 2009. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-107941.
Повний текст джерелаFagas, Georgios. "Vibrational properties of complex solids." Thesis, Lancaster University, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.321898.
Повний текст джерелаVarache, Renaud. "Development, characterization and modeling of interfaces for high efficiency silicon heterojunction solar cells." Thesis, Paris 11, 2012. http://www.theses.fr/2012PA112279/document.
Повний текст джерелаThe interface between amorphous silicon (a-Si:H) and crystalline silicon (c-Si) is the building block of high efficiency solar cells based on low temperature fabrication processes. Three properties of the interface determine the performance of silicon heterojunction solar cells: band offsets between a-Si:H and c-Si, interface defects and band bending in c-Si. These three points are addressed in this thesis.First, an analytical model for the calculation of the band bending in c-Si is developed. It assumes a constant density of states (DOS) in the a-Si:H band gap. The influence of most parameters of the structure on the band bending is studied: band offsets, DOS in a-Si:H, interface defects, etc. The presence of quantum confinement at the interface is discussed. Analytical calculations and temperature dependent planar conductance measurements are compared such that the band offsets on both (p)a-Si:H/(n)c-Si and (n)a-Si:H/(p)c-Si can be estimated: the valence band offset amounts 0.36 eV while the conduction band offset is 0.15 eV. In addition, it is shown that the valence band offset is independent of temperature whereas the conduction band offset follows the evolutions of c-Si and a-Si:H band gaps with temperature. A discussion of these results in the frame of the branch point theory for band line-up leads to the conclusion that the branch point in a-Si:H is independent of the doping.Then, analytical calculations are developed further to take into account the real solar cell structure where the a-Si:H/c-Si structure is in contact with a transparent conductive oxide and an undoped buffer layer is present at the interface. Measurements of the planar conductance and of the interface passivation quality are interpreted in the light of analytical calculations and numerical simulations to open a way towards a method for the optimization of silicon heterojunction solar cells. It is particularly shown that a trade-off has to be found between a good passivation quality and a significant band bending. This can be realized by tuning the buffer layer properties (thickness, doping), the TCO-contact (high work function) and the emitter (defect density and thickness). Interestingly, an emitter with a high DOS leads to better cell performances.Finally, a new type of interface has been developed, that was not applied to heterojunction solar cells so far. The c-Si surface has been oxidized in deionized water at 80 °C before the (p)a-Si:H emitter deposition such that (p)a-Si:H/SiO2/(n)c-Si structures were obtained. A tunneling current model has been developed, implemented in the 1D numerical device simulator AFORS-HET and used to study the effect of a wide band gap interfacial layer (as it is the case for SiO2) on cell performance: the fill-factor and the short-circuit current are dramatically reduced for thick and high barriers. However, a SiO2 layer has only little impact on optical properties. Fabricated samples show a passivation quality halfway between samples with no buffer layer and with an (i)a-Si:H buffer layer: this is explained by the presence of a negative fixed charge in the oxide. The band bending in (n)c-Si is higher with an oxide layer than with an (i)a-Si:H buffer layer. Solar cells demonstrate that this new concept has the potential to achieve high power conversion efficiencies: for non-optimized structures, an open-circuit voltage higher than 650 mV has been demonstrated, while the oxide does not seem to create a barrier to charge transport
Luo, Haoming. "High frequency thermomechanical study of heterogeneous materials with interfaces." Thesis, Lyon, 2020. http://www.theses.fr/2020LYSEI130.
Повний текст джерелаHeat transfer is actually intimately related to the sound propagation (acoustic transfer) in materials, as in insulators and semi-conductors the main heat carriers are acoustic phonons. The concept of the presence of interfaces has been largely exploited for efficiently manipulating phonons from long-wavelength to nanometric wavelengths, i.e., frequencies in THz regime, responsible for thermal transport at room temperature. In this thesis, the finite element method is used to perform transient analysis of wavepacket propagation in different mediums. I started with a parametric study of attenuation of acoustic wave-packets in a 2D semi-infinite elastic system with periodic circular interfaces. Three key parameters are investigated, including rigidity contrast, interface density and phonon wavelength. Different energy transfer regimes (propagative, diffusive, and localized) are identified allowing to understand the phonon contribution to thermal transport. Besides the circular interfaces, mechanical response and acoustic attenuation for different types of interfaces are also investigated, such as Eshelby’s inclusion, dendritic shape inclusion and porous materials with ordered/disordered holes. In order to extend the study to amorphous materials, I also considered a heterogeneous medium with random rigidities distributed in space according to a Gaussian distribution based on the theory of heterogeneous shear elasticity of glasses. Finally yet importantly, viscoelastic constitutive laws are proposed to take into account the frequency-dependent intrinsic phonon attenuation in glasses, with the aim of reproducing such intrinsic attenuation using a homogeneous viscous medium. Finite element simulation confirms that a continuum model may strictly follow the atomistic attenuation (G) for a well-calibrated macroscopic linear viscoelastic constitutive law. Compared with the experimental data in a-SiO2, our second constitutive law reproduces qualitatively and quantitatively the three regimes of acoustic attenuation versus frequency : successively Γ∝ω^2,ω^4,ω^2
Zhu, Kai Schiff Eric A. "Interface modulation spectroscopy and doping physics in amorphous silicon." Related Electronic Resource: Current Research at SU : database of SU dissertations, recent titles available full text, 2003. http://wwwlib.umi.com/cr/syr/main.
Повний текст джерелаGandy, Amy S. "A Transmission Electron Microscopy study of the Interaction between Defects in Amorphous Silicon and a Moving Crystalline/Amorphous Interface." Thesis, University of Salford, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.502784.
Повний текст джерелаКниги з теми "Amorphous-amorphous interfaces"
Wilfried G. J. H. M. Sark. Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells. Berlin, Heidelberg: Springer-Verlag Berlin Heidelberg, 2011.
Знайти повний текст джерелаSukirno. Ion beam induced interface motion and impurity relocation in amorphous layers on SI. Salford: University of Salford, 1991.
Знайти повний текст джерелаЧастини книг з теми "Amorphous-amorphous interfaces"
Blank-Bewersdorff, Margret, Uwe Köster, and Gabriele Bewernick. "Metallic Amorphous/Crystalline Interfaces." In Controlled Interphases in Composite Materials, 667–75. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-011-7816-7_61.
Повний текст джерелаHerman, Frank, and Philippe Lambin. "Interfaces Between Crystalline and Amorphous Tetrahedrally Coordinated Semiconductors." In Tetrahedrally-Bonded Amorphous Semiconductors, 469–82. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4899-5361-2_40.
Повний текст джерелаChakraverty, B. K. "Dislocation Mediated Pseudo-Melting at Silicon-Metal Interfaces." In Physical Properties of Amorphous Materials, 261–75. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4899-2260-1_8.
Повний текст джерелаSchlapbach, Louis. "Hydrogen at Metallic Surfaces and Interfaces." In Hydrogen in Disordered and Amorphous Solids, 397–421. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4899-2025-6_33.
Повний текст джерелаTosi, M. P. "Liquid Surfaces and Solid-Liquid Interfaces." In Amorphous Solids and the Liquid State, 125–56. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4757-9156-3_5.
Повний текст джерелаRavindra, N. M., D. Fathy, O. W. Holland, and J. Narayan. "Si — SiO2 Interfaces — a Hrtem Study." In The Physics and Technology of Amorphous SiO2, 279–83. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4613-1031-0_38.
Повний текст джерелаNovio, Fernando, and Daniel Ruiz-Molina. "Coordination Polymers for Medical Applications: Amorphous versus Crystalline Materials." In Hybrid Organic-Inorganic Interfaces, 661–94. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2017. http://dx.doi.org/10.1002/9783527807130.ch15.
Повний текст джерелаWool, R. P. "Strength and Entanglement Development at Amorphous Polymer Interfaces." In The IMA Volumes in Mathematics and Its Applications, 169–87. New York, NY: Springer New York, 1987. http://dx.doi.org/10.1007/978-1-4612-1064-1_10.
Повний текст джерелаHorbach, J., T. Stühn, C. Mischler, W. Kob, and K. Binder. "Amorphous Silica at Surfaces and Interfaces: Simulation Studies." In High Performance Computing in Science and Engineering ’03, 167–79. Berlin, Heidelberg: Springer Berlin Heidelberg, 2003. http://dx.doi.org/10.1007/978-3-642-55876-4_13.
Повний текст джерелаJhon, Mu Shik, and Youngie Oh. "Interfacial Tensions at Amorphous High Polymer-Water Interfaces: Theory." In Surface and Interfacial Aspects of Biomedical Polymers, 395–420. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4684-8610-0_11.
Повний текст джерелаТези доповідей конференцій з теми "Amorphous-amorphous interfaces"
Malyska, K., Ali Erdemir, Sergey A. Chizhik, Zygmunt Rymuza, and Lukasz Ratajczyk. "Amorphous Carbon Thin Films for Interfaces in MEMS." In World Tribology Congress III. ASMEDC, 2005. http://dx.doi.org/10.1115/wtc2005-63147.
Повний текст джерелаCaputo, D., G. de Cesare, C. Manetti, A. Nascetti, and R. Scipinotti. "Chromatographic System Based on Amorphous Silicon Photodiodes." In 2nd IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2007. IEEE, 2007. http://dx.doi.org/10.1109/iwasi.2007.4420008.
Повний текст джерелаRoy, Ajit K., V. Varshney, S. Ganguli, S. Sihn, J. Lee, and B. Farmer. "Atomistic Scale Thermal Transport in Amorphous Materials and Its Interfaces." In ASME/JSME 2011 8th Thermal Engineering Joint Conference. ASMEDC, 2011. http://dx.doi.org/10.1115/ajtec2011-44656.
Повний текст джерелаCaputo, D., G. de Cesare, A. Nascetti, and R. Scipinotti. "Amorphous silicon balanced photodiode for application in biomolecular analysis." In 2009 3rd International Workshop on Advances in sensors and Interfaces. IEEE, 2009. http://dx.doi.org/10.1109/iwasi.2009.5184760.
Повний текст джерелаMilinović, V., K. Zhang, N. Bibić, K. P. Lieb, M. Milosavljević, and P. K. Sahoo. "Ion Beam Mixing at Crystalline and Amorphous Fe/Si Interfaces." In THE PHYSICS OF IONIZED GASES: 23rd Summer School and International Symposium on the Physics of Ionized Gases; Invited Lectures, Topical Invited Lectures and Progress Reports. AIP, 2006. http://dx.doi.org/10.1063/1.2406030.
Повний текст джерелаNascetti, A., G. de Cesare, and D. Caputo. "Large area hybrid detector technology based on amorphous silicon photosensors." In 2009 3rd International Workshop on Advances in sensors and Interfaces. IEEE, 2009. http://dx.doi.org/10.1109/iwasi.2009.5184763.
Повний текст джерелаPrice, Michael, Andrey Ovcharenko, Raj Thangaraj, and Bart Raeymaekers. "Delamination of Ultra-Thin Diamond-Like Carbon Coatings on Magnetic Recording Heads Under Normal Loading." In ASME 2013 Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/isps2013-2899.
Повний текст джерелаMenichelli, M., L. Antognini, A. Bashiri, M. Bizzarri, L. Calcagnile, M. Caprai, A. P. Caricato, et al. "X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate." In 2023 9th International Workshop on Advances in Sensors and Interfaces (IWASI). IEEE, 2023. http://dx.doi.org/10.1109/iwasi58316.2023.10164611.
Повний текст джерелаMunson, Kyle, and John B. Asbury. "Characterization of triplet separation and diffusion in amorphous pentacene films via ultrafast infrared spectroscopy." In Physical Chemistry of Semiconductor Materials and Interfaces XX, edited by Daniel Congreve, Christian Nielsen, Andrew J. Musser, and Derya Baran. SPIE, 2021. http://dx.doi.org/10.1117/12.2594600.
Повний текст джерелаde Cesare, Giampiero, Domenico Caputo, and Augusto Nascetti. "Simultaneous measurement of light and temperature by a single amorphous silicon sensor." In 2015 6th IEEE International Workshop on Advances in Sensors and Interfaces (IWASI). IEEE, 2015. http://dx.doi.org/10.1109/iwasi.2015.7184971.
Повний текст джерелаЗвіти організацій з теми "Amorphous-amorphous interfaces"
Carter, C. B. Crystalline-amorphous interfaces and their relation to grain boundary films. Office of Scientific and Technical Information (OSTI), February 1992. http://dx.doi.org/10.2172/5738322.
Повний текст джерелаSchiff, E. A. Transport, Interfaces, and Modeling in Amorphous Silicon Based Solar Cells: Final Technical Report, 11 February 2002 - 30 September 2006. Office of Scientific and Technical Information (OSTI), October 2008. http://dx.doi.org/10.2172/940635.
Повний текст джерелаCarter, C. B. Crystalline-amorphous interfaces and their relation to grain boundary films. A report for the 3-year period, 15 November 1988--14 November 1991. Office of Scientific and Technical Information (OSTI), February 1992. http://dx.doi.org/10.2172/10131126.
Повний текст джерелаPisani, William, Dane Wedgeworth, Michael Roth, John Newman, and Manoj Shukla. Exploration of two polymer nanocomposite structure-property relationships facilitated by molecular dynamics simulation and multiscale modeling. Engineer Research and Development Center (U.S.), March 2023. http://dx.doi.org/10.21079/11681/46713.
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