Добірка наукової літератури з теми "AlN/Si (111) Heterojunction"
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Статті в журналах з теми "AlN/Si (111) Heterojunction"
Pattada, B., Jiayu Chen, M. O. Manasreh, S. Guo, D. Gotthold, M. Pophristic, and B. Peres. "Phonon modes of GaN/AlN heterojunction field-effect transistor structures grown on Si(111) substrates." Journal of Applied Physics 93, no. 9 (May 2003): 5824–26. http://dx.doi.org/10.1063/1.1561583.
Повний текст джерелаШарофидинов, Ш. Ш., С. А. Кукушкин, М. В. Старицын, А. В. Солнышкин, О. Н. Сергеева, Е. Ю. Каптелов та И. П. Пронин. "Структура и свойства композитов на основе нитридов алюминия и галлия, выращенных на кремнии разной ориентации с буферным слоем карбида кремния". Физика твердого тела 64, № 5 (2022): 522. http://dx.doi.org/10.21883/ftt.2022.05.52331.250.
Повний текст джерелаZainuriah, Hassan, Sha Shiong Ng, G. L. Chew, F. K. Yam, Mat Johar Abdullah, M. Roslan Hashim, Kamarulazizi Ibrahim, and M. E. Kordesch. "Growth and Properties of GaN/Si Heterojunction." Materials Science Forum 480-481 (March 2005): 531–36. http://dx.doi.org/10.4028/www.scientific.net/msf.480-481.531.
Повний текст джерелаNúñez-Cascajero, Arántzazu, Fernando B. Naranjo, María de la Mata, and Sergio I. Molina. "Structural Characterization of Al0.37In0.63N/AlN/p-Si (111) Heterojunctions Grown by RF Sputtering for Solar Cell Applications." Materials 14, no. 9 (April 27, 2021): 2236. http://dx.doi.org/10.3390/ma14092236.
Повний текст джерелаSharofidinov Sh. Sh., Kukushkin S. A., Staritsyn M. V., Solnyshkin A. V., Sergeeva O. N., Kaptelov E. Yu., and Pronin I. P. "Structure and properties of composites based on aluminum and gallium nitrides grown on silicon of different orientations with a buffer layer of silicon carbide." Physics of the Solid State 64, no. 5 (2022): 516. http://dx.doi.org/10.21883/pss.2022.05.53510.250.
Повний текст джерелаRiah, Badis, Julien Camus, Abdelhak Ayad, Mohammad Rammal, Raouia Zernadji, Nadjet Rouag, and Mohamed Abdou Djouadi. "Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer." Coatings 11, no. 9 (September 3, 2021): 1063. http://dx.doi.org/10.3390/coatings11091063.
Повний текст джерелаZhao, Qiang, Michael Lukitsch, Jie Xu, Gregory Auner, Ratna Niak, and Pao-Kuang Kuo. "Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 852–58. http://dx.doi.org/10.1557/s1092578300005172.
Повний текст джерелаShubina, K. Yu, D. V. Mokhov, T. N. Berezovskaya, E. V. Pirogov, A. V. Nashchekin, Sh Sh Sharofidinov, and A. M. Mizerov. "Separation of AlN layers from silicon substrates by KOH etching." Journal of Physics: Conference Series 2086, no. 1 (December 1, 2021): 012037. http://dx.doi.org/10.1088/1742-6596/2086/1/012037.
Повний текст джерелаКукушкин, С. А., А. В. Осипов, В. Н. Бессолов, Е. В. Коненкова та В. Н. Пантелеев. "Остановка и разворот дислокаций несоответствия при росте нитрида галлия на подложках SiC/Si". Физика твердого тела 59, № 4 (2017): 660. http://dx.doi.org/10.21883/ftt.2017.04.44266.287.
Повний текст джерелаIsshiki, Toshiyuki, Koji Nishio, Yoshihisa Abe, Jun Komiyama, Shunichi Suzuki, and Hideo Nakanishi. "HRTEM Analysis of AlN Layer Grown on 3C-SiC/Si Heteroepitaxial Substrates with Various Surface Orientations." Materials Science Forum 600-603 (September 2008): 1317–20. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1317.
Повний текст джерелаДисертації з теми "AlN/Si (111) Heterojunction"
Zang, Keyan, Lianshan Wang, Soo-Jin Chua, and Carl V. Thompson. "Structural analysis of metalorganic chemical vapor deposited AlN nucleation layers on Si (111)." 2003. http://hdl.handle.net/1721.1/3841.
Повний текст джерелаSingapore-MIT Alliance (SMA)
Su, P. C., and 蘇柏健. "Effect of mask pattern on the c-axis texture of AlN grown on Si(111)." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/22736a.
Повний текст джерелаPu, Jun-Liang, and 蒲俊良. "Investigation of GaN layer grown on Si(111) substrate using an LT GaN/ultrathin AlN wetting layer." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/e394c2.
Повний текст джерела崑山科技大學
電機工程研究所
91
In this thesis, GaN and its relative materials are the key issue for developing the blue-green devices. In this paper, we study the material characteristic of GaN by X-ray diffraction (XRD) measurement and Photoluminescence (PL). Firstly, we introduce the source of developing GaN, metal organic chemical vapor phase deposition (MOCVD), X-ray diffraction (XRD), photoluminescence and AFM measurement. Then we do the systematic research on GaN under different growth condition. We analyze the GaN crystal quality affected by the growth flow of buffer layer. Finally, we can observe GaN crystal layer of surface level and smooth by AFM and high multiple optics microscope measurement. We study the film GaN crystal quality by X-ray diffraction (XRD) measurement and the shift of the PL spectra under different excitation light intensity.
Chen, Chien-Hsun, and 陳建勳. "Characterizations of GaN/AlN multilayers on a mesh patterned Si(111) grown by metal-organic chemical vapor deposition." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/15521410380206659047.
Повний текст джерела國立清華大學
材料科學工程學系
94
A 300 x 300 micro-meter square crack-free GaN/AlN multilayers of 2 micrometer thick has been successfully grown on the Si(111) substrate patterned with SixNy or SiO2 meshes by MOCVD. The cathodoluminescence (CL) and Raman results show that the better quality of GaN is obtained for the SixNy mesh patterned Si(111) as the substrate. And better quality of GaN is achieved for smaller mesh size. The in-plane stress exhibits a U shape distribution across the “window” region, supported by the Raman shift of the GaN E2(TO) mode. This indicates a stress relaxation abruptly occurring near the edge of the “window” region due to the free standing surface (11-bar01) or (112-bar2). The in-plane stress is almost relaxed at the corner of the “window” region due to three free standing surfaces (11-bar01), (112-bar2), and (101-bar1). The maximum in-plane stress is located near the surface of the multilayers at the center of the “window” region, supported by the Raman measurements and the failure observations. The role of the SixNy mesh in the stress relaxation is discussed. The band gap shift in the 80 x 80 micrometer square crack-free GaN/AlN multilayers on the mesh patterned Si(111) was characterized by cathodoluminescence (CL) and Raman techniques. The GaN band gap derived from CL spectra depends on the spatial point inside a mesh, which changes from 3.413 eV (at center), to 3.418 eV (at edge), and to 3.426 eV (at corner). The band gap shift is attributed to the variation of tensile stress inside the mesh, confirmed by Raman mapping. The shift of GaN band gap per unit stress is determined to be 0.03 eV/GPa. Scanning photoelectron microscopy (SPEM) was applied to extract chemical images of the GaN/AlN multilayers within the mesh. The SPEM images study of the GaN/AlN multilayers on a mesh patterned Si(111) is dependent on the local charging. The V-defect on the surface of GaN can be observed by SPEM images and is determined to be Ga terminated surface.
Частини книг з теми "AlN/Si (111) Heterojunction"
Ajmal Khan, M., and Yasuaki Ishikawa. "Indium (In)-Catalyzed Silicon Nanowires (Si NWs) Grown by the Vapor–Liquid–Solid (VLS) Mode for Nanoscale Device Applications." In Nanowires - Recent Progress. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.97723.
Повний текст джерелаТези доповідей конференцій з теми "AlN/Si (111) Heterojunction"
Hu, D. Z., R. Vöhringer, D. M. Schaadt, Jisoon Ihm, and Hyeonsik Cheong. "Epitaxial growth of AlN films on Si (111)." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666344.
Повний текст джерелаMalin, T. V., V. G. Mansurov, Yu G. Galitsyn, and K. S. Zhuravlev. "2D AlN layer formation on (111)Si surface by ammonia MBE." In 2014 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO). IEEE, 2014. http://dx.doi.org/10.1109/3m-nano.2014.7057317.
Повний текст джерелаImura, M., A. Tanaka, H. Iwai, J. Liu, M. Liao, and Y. Koide. "Energy-band offset of AlN/Diamond(111) heterojunction determined by X-ray photoelectron spectroscopy." In 2014 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2014. http://dx.doi.org/10.7567/ssdm.2014.ps-14-9.
Повний текст джерелаAkasaka, Tetsuya, Yasuyuki Kobayashi, and Toshiki Makimoto. "GaN Heteroepitaxy on Si(111) substrates Using AlN/AlGaN Superlattice Buffer Layers." In 2006 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2006. http://dx.doi.org/10.7567/ssdm.2006.i-2-5.
Повний текст джерелаYusoff, Mohd Zaki Mohd, Zainuriah Hassan, Azzafeerah Mahyuddin, Chin Che Woei, Anas Ahmad, Yushamdan Yusof, and Mohd Bukhari Md Yunus. "Structural characterization of AlN and AlGaN layers grown on GaN/AlN/Si 111 by plasma-assisted MBE." In 2011 IEEE Symposium on Business, Engineering and Industrial Applications (ISBEIA). IEEE, 2011. http://dx.doi.org/10.1109/isbeia.2011.6088879.
Повний текст джерелаYang, Tsung Hsi, Jet-Chung Chang, Jui Tai Ku, Shih-Guo Shen, Yi-Cheng Chen та Chun-Yen Chang. "Growth of GaN on Si (111) using simultaneous AlN/α-Si3N4 buffer structure". У 2007 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2007. http://dx.doi.org/10.7567/ssdm.2007.f-1-6.
Повний текст джерелаDeng, Tianguo, Takuma Sato, Zhihao Xu, Ryota Takabe, Suguru Yachi, Yudai Yamashita, Kaoru Toko, and Takashi Suemasu. "Investigation of p-BaSi2/n-Si heterojunction solar cells on Si(001) and comparison to those on Si(111)." In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). IEEE, 2018. http://dx.doi.org/10.1109/pvsc.2018.8547215.
Повний текст джерелаYusoff, Mohd Zaki Mohd, Azzafeerah Mahyuddin, Zainuriah Hassan, Haslan Abu Hassan, and Mat Johar Abdullah. "The investigation of Al[sub 0.29]Ga[sub 0.71]N/GaN/AlN and AlN/GaN/AlN thin films grown on Si (111) by RF plasma-assisted MBE." In 2ND ASEAN - APCTP WORKSHOP ON ADVANCED MATERIALS SCIENCE AND NANOTECHNOLOGY: (AMSN 2010). AIP, 2012. http://dx.doi.org/10.1063/1.4732500.
Повний текст джерелаZhao, Yongmei, Guosheng Sun, Xingfang Liu, Jiaye Li, Wanshun Zhao, Lei Wang, Muchang Luo, and Jinmin Li. "Effects of V/III Ratios on the Properties of AlN Grown on Si (111) Substrate by LP-MOCVD." In 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/icsict.2006.306569.
Повний текст джерелаLumbantoruan, Franky, Yuan-Yee Wong, Yue-Han Wu, Wei-Ching Huang, Niraj Man Shrestra, Tung Tien Luong, Tran Binh Tinh, and Edward Yi Chang. "Investigation of TMAl preflow to the properties of AlN and GaN film grown on Si(111) by MOCVD." In 2014 IEEE 11th International Conference on Semiconductor Electronics (ICSE). IEEE, 2014. http://dx.doi.org/10.1109/smelec.2014.6920785.
Повний текст джерела