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Статті в журналах з теми "Active gate driver"
Lasek, Bartosz, Przemysław Trochimiuk, Rafał Kopacz, and Jacek Rąbkowski. "Parasitic-Based Active Gate Driver Improving the Turn-On Process of 1.7 kV SiC Power MOSFET." Applied Sciences 11, no. 5 (March 3, 2021): 2210. http://dx.doi.org/10.3390/app11052210.
Повний текст джерелаLiang, Mei, Jiwen Chen, Jinchao Bai, Pengyu Jia, and Yuzhe Jiao. "A New Gate Driver for Suppressing Crosstalk of SiC MOSFET." Electronics 11, no. 20 (October 11, 2022): 3268. http://dx.doi.org/10.3390/electronics11203268.
Повний текст джерелаFahmi, M. I., M. F. Mukmin, H. F. Liew, C. L. Wai, M. A. Aazmi, and S. N. M. Arshad. "Design new voltage balancing control series connected for HV-IGBT`s." International Journal of Electrical and Computer Engineering (IJECE) 11, no. 4 (August 1, 2021): 2899. http://dx.doi.org/10.11591/ijece.v11i4.pp2899-2906.
Повний текст джерелаSukhatme, Yash, Vamshi Krishna Miryala, P. Ganesan, and Kamalesh Hatua. "Digitally Controlled Gate Current Source-Based Active Gate Driver for Silicon Carbide MOSFETs." IEEE Transactions on Industrial Electronics 67, no. 12 (December 2020): 10121–33. http://dx.doi.org/10.1109/tie.2019.2958301.
Повний текст джерелаGras, David, Christophe Pautrel, Amir Fanaei, Gregory Thepaut, Maxime Chabert, Fabien Laplace, and Gonzalo Picun. "Highly Integrated and Isolated Universal Half-Bridge Power Gate Driver and Associated Flyback Power Supply for High Temperature and High Reliability Applications." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, HITEC (January 1, 2014): 000206–13. http://dx.doi.org/10.4071/hitec-wp12.
Повний текст джерелаGhorbani, Hamidreza, Vicent Sala, Alejandro Paredes Camacho, and Jose Romeral Martinez. "A Simple Closed-Loop Active Gate Voltage Driver for Controlling diC/dt and dvCE/dt in IGBTs." Electronics 8, no. 2 (January 30, 2019): 144. http://dx.doi.org/10.3390/electronics8020144.
Повний текст джерелаBagheri, Alireza, Hossein Iman-Eini, and Shahrokh Farhangi. "A Gate Driver Circuit for Series-Connected IGBTs Based on Quasi-Active Gate Control." IEEE Journal of Emerging and Selected Topics in Power Electronics 6, no. 2 (June 2018): 791–99. http://dx.doi.org/10.1109/jestpe.2018.2791202.
Повний текст джерелаColeman, Fred, and Young J. Moon. "System Simulation of Dual-Gate At-Grade Railroad-Highway Crossings: Development and Verification." Transportation Research Record: Journal of the Transportation Research Board 1605, no. 1 (January 1997): 88–95. http://dx.doi.org/10.3141/1605-11.
Повний текст джерелаCamacho, Alejandro Paredes, Vicent Sala, Hamidreza Ghorbani, and Jose Luis Romeral Martinez. "A Novel Active Gate Driver for Improving SiC MOSFET Switching Trajectory." IEEE Transactions on Industrial Electronics 64, no. 11 (November 2017): 9032–42. http://dx.doi.org/10.1109/tie.2017.2719603.
Повний текст джерелаWaradzyn, Zbigniew, Robert Stala, Aleksander Skała, Andrzej Mondzik, and Adam Penczek. "A Cost-Effective Resonant Switched-Capacitor DC-DC Boost Converter – Experimental Results and Feasibility Model." Power Electronics and Drives 3, no. 1 (December 1, 2018): 75–83. http://dx.doi.org/10.2478/pead-2018-0004.
Повний текст джерелаДисертації з теми "Active gate driver"
Lui, Dawei. "Active gate driver design for GaN FET power devices." Thesis, University of Bristol, 2017. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.730883.
Повний текст джерелаRaszmann, Emma Barbara. "Series-Connection of Silicon Carbide MOSFET Modules using Active Gate-Drivers with dv/dt Control." Thesis, Virginia Tech, 2019. http://hdl.handle.net/10919/95938.
Повний текст джерелаMaster of Science
According to ABB, 40% of the world's power demand is supplied by electrical energy. Specifically, in 2018, the world's electrical demand has grown by 4% since 2010. The growing need for electric energy makes it increasingly essential for systems that can efficiently and reliably convert and control energy levels for various end applications, such as electric motors, electric vehicles, data centers, and renewable energy systems. Power electronics are systems by which electrical energy is converted to different levels of power (voltage and current) depending on the end application. The use of power electronics systems is critical for controlling the flow of electrical energy in all applications of electric energy generation, transmission, and distribution. Advances in power electronics technologies, such as new control techniques and manufacturability of power semiconductor devices, are enabling improvements to the overall performance of electrical energy conversion systems. Power semiconductor devices, which are used as switches or rectifiers in various power electronic converters, are a critical building block of power electronic systems. In order to enable higher output power capability for converter systems, power semiconductor switches are required to sustain higher levels of voltage and current. Wide bandgap semiconductor devices are a particular new category of power semiconductors that have superior material properties compared to traditional devices such as Silicon (Si) Insulated-Gate Bipolar Junction Transistors (IGBTs). In particular, wide bandgap devices such as Silicon Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) have better ruggedness and thermal capabilities. These properties provide wide bandgap semiconductor devices to operate at higher temperatures and switching frequencies, which is beneficial for maximizing the overall efficiency and volume of power electronic converters. This work investigates a method of scaling up voltage in particular for medium-voltage power conversion, which can be applied for a variety of application areas. SiC MOSFET devices are becoming more attractive for utilization in medium-voltage high-power converter systems due to the need to further improve the efficiency and density of these systems. Rather than using individual high voltage rated semiconductor devices, this thesis demonstrates the effectiveness of using several low voltage rated semiconductor devices connected in series in order to operate them as a single switch. Using low voltage devices as a single series-connected switch rather than a using single high voltage switch can lead to achieving a lower total on-state resistance, expectedly maximizing the overall efficiency of converter systems for which the series-connected semiconductor switches would be applied. In particular, this thesis focuses on the implementation of a newer approach of compensating for the natural unbalance in voltage between series-connected devices. An active gate control method is used for monitoring and regulating the switching speed of several devices operated in series in this work. The objective of this thesis is to investigate the feasibility of this method in order to achieve up to 6 kV total dc bus voltage using eight series-connected SiC MOSFET devices.
Paredes, Camacho Alejandro. "Active gate drivers for high-frequency application of SiC MOSFETs." Doctoral thesis, Universitat Politècnica de Catalunya, 2020. http://hdl.handle.net/10803/669291.
Повний текст джерелаLa tendencia en el diseño y desarrollo de convertidores de potencia está enfocada en realizar sistemas eficientes con alta densidad de potencia, fiabilidad y bajo costo. Los retos para cubrir esta tendencia están centrados principalmente en el uso de nuevas tecnologías de dispositivos de conmutación tales como, MOSFETs de carburo de silicio (SiC). Los MOSFETs de SiC presentan mejores características que sus homólogos de silicio; tienen baja resistencia de conducción, pueden trabajar a mayores velocidades de conmutación y pueden operar a mayores niveles de temperatura y tensión. A pesar de las ventajas de los transistores de SiC, existen problemas que se manifiestan cuando estos dispositivos operan a altas frecuencias de conmutación. Las rápidas velocidades de conmutación de los MOSFETs de SiC pueden provocar sobre-voltajes y sobre-corrientes que conllevan a problemas de interferencia electromagnética (EMI). Por tal motivo, el desarrollo de controladores de puertas es una etapa fundamental en los MOSFETs de SiC para eliminar los problemas a altas frecuencias de conmutación y aumentar su rendimiento. En consecuencia, aprovechar las ventajas de estos dispositivos y lograr sistemas más eficientes y con alta densidad de potencia. En esta tesis, se realiza un estudio, diseño y desarrollo de controladores activos de puerta para mejorar el rendimiento de conmutación de los MOSFETs de SiC aplicados a convertidores de potencia de alta frecuencia. Los controladores son validados a través de pruebas y estudios experimentales. Además, los controladores de puerta desarrollados son aplicados en convertidores para sistemas de carga inalámbrica de baterías de vehículos eléctricos. Los resultados muestran la importancia de los controladores de compuerta propuestos y su viabilidad en convertidores de potencia basados en carburo de silicio.
Na, Xiaoxiang. "Game theoretical modelling of a driver's interaction with active steering." Thesis, University of Cambridge, 2014. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708392.
Повний текст джерелаEngelmann, Georges [Verfasser], Doncker Rik W. [Akademischer Betreuer] De, and Stefan [Akademischer Betreuer] Heinen. "Reducing device stress and switching losses using active gate drivers and improved switching cell design / Georges Engelmann ; Rik Wivina Anna de Doncker, Stefan Heinen." Aachen : Universitätsbibliothek der RWTH Aachen, 2018. http://d-nb.info/1186069376/34.
Повний текст джерелаHudson, Robert Dearn. "Development of an integrated co-processor based power electronic drive / by Robert D. Hudson." Thesis, North-West University, 2008. http://hdl.handle.net/10394/3723.
Повний текст джерелаThesis (M.Ing. (Electrical Engineering))--North-West University, Potchefstroom Campus, 2009.
Alsibai, Ziad. "Návrh analogových obvodů s nízkým napájecím napětím a nízkým příkonem." Doctoral thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2014. http://www.nusl.cz/ntk/nusl-233672.
Повний текст джерелаBay, Abo Dabbous Salma. "Využití nekonvenčních CMOS technik při návrhu analogových obvodů s nízkým příkonem a nízkým napájecím napětím pro biomedicínské aplikace." Doctoral thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2016. http://www.nusl.cz/ntk/nusl-255291.
Повний текст джерелаTippner, Jeffrey E. "The Third World evangelical missiology of Orlando E. Costas." Thesis, University of St Andrews, 2013. http://hdl.handle.net/10023/3278.
Повний текст джерелаYen-TingLiu and 劉彥廷. "Design of Pixel and Gate Driver Circuits for High-Driving-Speed Active-Matrix OLED Displays." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/zmjqz2.
Повний текст джерелаКниги з теми "Active gate driver"
VAN. Toy Story: Official Game Book. Indianapolis, IN: BradyGames, 1995.
Знайти повний текст джерелаRICH. The Lion King: Official Game Book. Indianapolis, IN: BradyGames, 1994.
Знайти повний текст джерелаHodgson, David S. J. Castlevania: Official Strategy Guide. Westlake Village, CA: Millennium Publications, Inc., 1999.
Знайти повний текст джерелаSepowski, Stephen J., ed. The Ultimate Hint Book. Old Saybrook, CT: The Ultimate Game Club Ltd., 1991.
Знайти повний текст джерелаTiller, Emerson H. The “Law” and Economics of Judicial Decision-Making. Edited by Francesco Parisi. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199684267.013.017.
Повний текст джерелаValdini, Melody E. The Inclusion Calculation. Oxford University Press, 2019. http://dx.doi.org/10.1093/oso/9780190936198.001.0001.
Повний текст джерелаGame Boy Advance: Miniature Gaming Masterclass. Bath, England: Future Publishing, 2001.
Знайти повний текст джерелаN64 Magazine Double Game Guide +, No. 18: Castlevania 64 & Premier Manager 64. Bath, England: Future Publishing, 1999.
Знайти повний текст джерелаN64 Magazine Double Game Guide +, No. 25: The World is Not Enough & WWF No Mercy. Bath, England: Future Publishing, 2001.
Знайти повний текст джерелаReturn of the Great N64 Magazine Games Challenge Book. Bath, England: Future Publishing, 2000.
Знайти повний текст джерелаЧастини книг з теми "Active gate driver"
Pnevmatikakis, Aristodemos, Harm op den Akker, Sofoklis Kyriazakos, Andrew Pomazanskyi, and Albena Mihovska. "Game and Multisensory Driven Ecosystem to an Active Lifestyle." In Lecture Notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering, 49–58. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-23976-3_5.
Повний текст джерелаChandu, Mankina, and K. Varalakshmi. "Gate Driver Design and Mitigation of Voltage Glitch in SiC MOSFET Using Miller Clamp." In Advances in Transdisciplinary Engineering. IOS Press, 2022. http://dx.doi.org/10.3233/atde220774.
Повний текст джерелаLokesh, Durga, M. Sai Durga, N. Sai Phani, K. Varalakshmi, and Ch Govinda. "Modelling and Controlling a Buck Converter Using Shunt Active Power Filter." In Advances in Transdisciplinary Engineering. IOS Press, 2023. http://dx.doi.org/10.3233/atde221231.
Повний текст джерелаHadjistassou, Stella K., and Judith Molka-Danielsen. "Designing Alien Mysteries in Chatterdale." In Advances in Game-Based Learning, 222–36. IGI Global, 2016. http://dx.doi.org/10.4018/978-1-4666-9629-7.ch011.
Повний текст джерелаMadin, Ian P., Ashley R. Streig, and Scott E. K. Bennett. "The Mount Hood fault zone, active faulting at the crest of the dynamic Cascade Range, north-central Oregon, USA." In From Terranes to Terrains: Geologic Field Guides on the Construction and Destruction of the Pacific Northwest, 49–71. Geological Society of America, 2021. http://dx.doi.org/10.1130/2021.0062(03).
Повний текст джерелаWeiner, Sara P., and Melissa McMahan. "Action Taking Augmented by Artificial Intelligence." In Employee Surveys and Sensing, 338–54. Oxford University Press, 2020. http://dx.doi.org/10.1093/oso/9780190939717.003.0021.
Повний текст джерелаWilson, Joseph, and Aisha Kolo Lawan. "Digital Leisure or Digital Business?" In Digital Multimedia, 1407–18. IGI Global, 2018. http://dx.doi.org/10.4018/978-1-5225-3822-6.ch067.
Повний текст джерелаWilson, Joseph, and Aisha Kolo Lawan. "Digital Leisure or Digital Business?" In Overcoming Gender Inequalities through Technology Integration, 244–59. IGI Global, 2016. http://dx.doi.org/10.4018/978-1-4666-9773-7.ch013.
Повний текст джерелаAhdar, Rex. "Vertical Arrangements." In The Evolution of Competition Law in New Zealand, 124–51. Oxford University Press, 2020. http://dx.doi.org/10.1093/oso/9780198855606.003.0005.
Повний текст джерелаWilliams, Keith. "An Individuating Rhythm: Picturing Time in a Portrait of The Artist as a Young Man." In James Joyce and Cinematicity, 106–73. Edinburgh University Press, 2020. http://dx.doi.org/10.3366/edinburgh/9781474402484.003.0003.
Повний текст джерелаТези доповідей конференцій з теми "Active gate driver"
Mahmodicherati, Sam, Nandini Ganesan, Lakshmi Ravi, and Rangarajan Tallam. "Application of Active Gate Driver in Variable Frequency Drives." In 2018 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 2018. http://dx.doi.org/10.1109/ecce.2018.8558170.
Повний текст джерелаRubino, Luigi, and Guido Rubino. "On the Active Clamp Gate Driver Thermal Effects." In 2019 International Conference on Clean Electrical Power (ICCEP). IEEE, 2019. http://dx.doi.org/10.1109/iccep.2019.8890213.
Повний текст джерелаDymond, Harry C. P., Dawei Liu, Jianjing Wang, Jeremy J. O. Dalton, and Bernard H. Stark. "Multi-level active gate driver for SiC MOSFETs." In 2017 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 2017. http://dx.doi.org/10.1109/ecce.2017.8096860.
Повний текст джерелаHan, Dongwoo, Sanghun Kim, Xiaofeng Dong, Zhehui Guo, Hui Li, Jinyeong Moon, Yuan Li, Fang Z. Peng, Radha Sree Krishna Moorthy, and Madhu Chinthavali. "An Integrated Active Gate Driver for SiC MOSFETs." In 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA). IEEE, 2021. http://dx.doi.org/10.1109/wipda49284.2021.9645086.
Повний текст джерелаVamshi Krishna, M., and Kamalesh Hatua. "An Easily Implementable Gate Charge Controlled Active Gate Driver for SiC MOSFET." In IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society. IEEE, 2018. http://dx.doi.org/10.1109/iecon.2018.8591843.
Повний текст джерелаDu, Xia, Yuqi Wei, Andrea Stratta, Liyang Du, Venkata Samhitha Machireddy, and Alan Mantooth. "A Four-level Active Gate Driver with Continuously Adjustable Intermediate Gate Voltages." In 2022 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 2022. http://dx.doi.org/10.1109/apec43599.2022.9773689.
Повний текст джерелаVamshi Krishna M and Kamalesh Hatua. "Current controlled active gate driver for 1200V SiC MOSFET." In 2016 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES). IEEE, 2016. http://dx.doi.org/10.1109/pedes.2016.7914328.
Повний текст джерелаParedes, Alejandro, Vicent Sala, Hamidreza Ghorbani, and Luis Romeral. "A novel active gate driver for silicon carbide MOSFET." In IECON 2016 - 42nd Annual Conference of the IEEE Industrial Electronics Society. IEEE, 2016. http://dx.doi.org/10.1109/iecon.2016.7793222.
Повний текст джерелаWiesemann, Julius, and Axel Mertens. "An Isolated Variable-Resistance Active Gate Driver for Use in SiC-Driven Inverters." In IECON 2021 - 47th Annual Conference of the IEEE Industrial Electronics Society. IEEE, 2021. http://dx.doi.org/10.1109/iecon48115.2021.9589774.
Повний текст джерелаHyon, ByongJo, Joon-Sung Park, and Jin-Hong Kim. "The Active Gate Driver for Switching Loss Reduction of Inverter." In 2020 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 2020. http://dx.doi.org/10.1109/ecce44975.2020.9236180.
Повний текст джерела