Статті в журналах: "A-SiOx"

1

Li, Feitao, Siyao Wan, Dong Wang, and Peter Schaaf. "Formation of nanoflowers: Au and Ni silicide cores surrounded by SiO_x branches." Beilstein Journal of Nanotechnology 14 (January 20, 2023): 133–40. http://dx.doi.org/10.3762/bjnano.14.14.

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This work reports the formation of nanoflowers after annealing of Au/Ni bilayers deposited on SiO2/Si substrates. The cores of the nanoflowers consist of segregated Ni silicide and Au parts and are surrounded by SiOx branches. The SiO2 decomposition is activated at 1050 °C in a reducing atmosphere, and it can be enhanced more by Au compared to Ni. SiO gas from the decomposition of SiO2 and the active oxidation of Si is the source of Si for the growth of the SiOx branches of the nanoflowers. The concentration of SiO gas around the decomposition cavities is inhomogeneously distributed. Closer to the cavity border, the concentration of the Si sources is higher, and SiOx branches grow faster. Hence, nanoflowers present shorter and shorter branches as they are getting away from the border. However, such inhomogeneous SiO gas concentration is weakened in the sample with the highest Au concentration due to the strong ability of Au to enhance SiO2 decomposition, and nanoflowers with less difference in their branches can be observed across the whole sample.

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2

Турищев, С. Ю., В. А. Терехов, Д. А. Коюда, А. В. Ершов, А. И. Машин, Е. В. Паринова, Д. Н. Нестеров, Д. А. Грачев, И. А. Карабанова та Э. П. Домашевская. "Формирование нанокристаллов кремния в многослойных нанопериодических структурах a-SiO-=SUB=-x-=/SUB=-/диэлектрик по результатам синхротронных исследований". Физика и техника полупроводников 51, № 3 (2017): 363. http://dx.doi.org/10.21883/ftp.2017.03.44208.8374.

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Изучен вопрос эффективности контролируемого формирования массивов кремниевых наночастиц на основе детальных исследований электронного строения многослойных нанопериодических структур a-SiOx/SiO2, a-SiOx/Al2O3 и a-SiOx/ZrO2. С применением синхротронного метода спектроскопии ближней тонкой структуры края рентгеновского поглощения обнаружена модификация исследованных структур под влиянием высокотемпературного отжига при максимальной температуре 1100oC, объясняемая образованием нанокристаллов кремния в слоях светоизлучающих многослойных структур. DOI: 10.21883/FTP.2017.03.44208.8374

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3

Ramesh, P. D., та K. J. Rao. "Carbothermal reduction and nitridation reaction of SiOx and preoxidized SiOx: Formation of α-Si3N4 fibers". Journal of Materials Research 9, № 9 (вересень 1994): 2330–40. http://dx.doi.org/10.1557/jmr.1994.2330.

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The chemical composition of amorphous SiOx has been analyzed by oxidation studies and is found to be SiO1.7. SiO1.7 appears to be a monophasic amorphous material on the basis of 29Si nuclear magnetic resonance, high resolution electron microscopy, and comparative behavior of a physical mixture of Si and SiO2. Carbothermal reduction and nitridation reactions have been carried out on amorphous SiO1.7 and on amorphous SiO2 obtained from oxidation of SiO1.7. At 1623 K reactions of SiO1.7 lead exclusively to the formation of Si2N2O, while those of SiO2 lead exclusively to the formation of Si3N4. Formation of copious fibers of α-Si3N4 was observed in the latter reaction. It is suggested that the partial pressure of SiO in equilibrium with reduced SiO1.7 and SiO2 during the reaction is the crucial factor that determines the chemistry of the products. The differences in the structures of SiO2 and SiO1.7 have been considered to be the origin of the differences in the SiO partial pressures of the reduction products formed prior to nitridation. The effect of the ratios, C:SiO1.7 and C:SiO2, in the reaction mixture as well as the effect of the temperature on the course of the reactions have also been investigated.

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4

Delimitis, A., S. D. Pappas, S. Grammatikopoulos, Panagiotis Poulopoulos, Vassilios Kapaklis, D. Trachylis, and C. Politis. "Microstructural Investigation of SiO_x Thin Films Grown by Reactive Sputtering on (001) Si Substrates." Journal of Nano Research 17 (February 2012): 147–56. http://dx.doi.org/10.4028/www.scientific.net/jnanor.17.147.

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In the Current Study, the Structural Characteristics of Siox Thin Films Grown by Magnetron Sputtering on Si Substrates Are Reported. High Resolution Transmission Electron Microscopy Revealed the Formation of Amorphous Siox Films for the as-Deposited Samples, as Well as the Ones Annealed in Ambient Air for 30 Min at 950oC and of Si Nanocrystals, Embedded in Amorphous Siox, after Ar Annealing for 1-4 Hours at 1000oC. the Nanocrystals, with Sizes up to 6 Nm, Predominately Exhibit {111} Lattice Planes. Energy-Dispersive X-Ray Analysis Showed that the Si/O Ratio Is between 0.5-1, I.e. the Amorphous Films Comprise of a Mixture of Sio2 and Sio. Phase Images and Corresponding Strain Maps Created Using Fourier Filtering Revealed a Uniform Contrast in the Nanocrystals, which Shows that the Si Lattice Constant Does Not Vary Significantly. the Residual Strain Variations, around 4%, May Account for the Possible Existence of a Small Percentage of Highly Disordered Si or Siox Residual Clusters inside the Regular Si Matrix, in Full Agreement with Photoluminescence Measurements Performed on the same Materials.

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5

Перевалов, Т. В., В. А. Володин, Ю. Н. Новиков, Г. Н. Камаев, В. А. Гриценко та И. П. Просвирин. "Наноразмерные флуктуации потенциала в SiO-=SUB=-x-=/SUB=-, синтезированном плазмохимическим осаждением". Физика твердого тела 61, № 12 (2019): 2528. http://dx.doi.org/10.21883/ftt.2019.12.48589.552.

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The atomic structure and electron spectrum of a-SiOx:H films deposited on silicon and glass substrates by the plasma enhanced chemical vapor deposition method are considered in this paper. The film stoichiometric parameter «x» varied in the range from 0.57 to 2 depending on the oxygen supply to the reactor conditions. The film structures and the electronic structure peculiarities characterization, depending on the parameter «x» value, were carried out using a set of structural and optical techniques, as well as the ab initio quantum-chemical simulation for the model SiOx structure. It was established that the studied SiOx:H films mainly consist of silicon suboxide SiOy with SiO2 and amorphous Si clusters. Based on the spatial chemical composition fluctuations, the electron and hole potential fluctuations model for SiOx is proposed. The obtained results will allow a more accurate charge transport modeling in a-SiOx:H films, which is important for creating nonvolatile memory and memristor elements on the base of SiOx.

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6

CZARNACKA, Karolina. "Zmiennoprądowe właściwości dielektryczne materiałów nanowarstwowych a-SiOx/SiO2." PRZEGLĄD ELEKTROTECHNICZNY 1, no. 8 (August 5, 2018): 61–64. http://dx.doi.org/10.15199/48.2018.08.16.

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7

Parka, Chan Hwi, Kyung Sub Leeb, and Dong Wook Shina. "Fabrication of Silicon Oxide Base Powders for Anode of Lithium Ion Battery by Hydrolysis Flame Synthesis." Advanced Materials Research 811 (September 2013): 98–103. http://dx.doi.org/10.4028/www.scientific.net/amr.811.98.

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SiOx based composite powders were fabricated by flame hydrolysis synthesis method employing an oxygen-hydrogen flame torch. The SiCl4 gas was used as a precursor and carried into the central tube of the torch by dry Ar gas. As-synthesized SiOx based composite powders had spherical shape with the size of about 3040 nm. To control the structure of the incompletely oxidized SiOx based composite powders, the as-synthesized SiOx based composite powders were heat-treated under 5 % H2 and 95 % Ar mixed gas atmosphere at a temperature of 1000 °C to 1400 °C for 3h. The properties of as-synthesized and post heat-treated SiOx based composite powders at various temperatures were investigated by XRD, TEM, SEM, FT-IR and XPS analysis. And through the post-treatment effects, structural controlled the incomplete oxidized SiOx based composite powders. The formed particles in SiOx based powders had sphere shape and the size of 30 ~ 40 nm. TEM analysis revealed that the amorphous phase and crystalline phase were mixed in SiOx based composite powders by post-heat treatment. And the Si and SiO2 crystalline phases were detected in amorphous phase.

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8

Shin, Young Chul, Eun Hong Kim, and Tae Geun Kim. "EUROPIUM SILICATE THIN FILMS FABRICATED BY RF MAGNETRON SPUTTERING AND THERMAL TREATMENT." ASEAN Journal on Science and Technology for Development 24, no. 1&2 (November 15, 2017): 147–52. http://dx.doi.org/10.29037/ajstd.195.

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We report the fabrication and optical characteristics of europium silicate thin films. Layer structures of Eu2O3/SiOX/Si (100) were deposited by an rf-sputtering method and annealed at 1100°C by rapid thermal annealing (RTA). Two methods were used for the deposition of SiOX layer: One was deposited by sputtering using SiO2 target (Ar gas at a rate of 50 sccm) and the other was deposited by reactive sputtering using Si target (Ar gas at a rate of 45 sccm, with an O2 gas at a rate of 5 sccm). Photoluminescence peak at 430 nm was observed in the sample composed of SiOx interlayer sputtered from SiO2 target. In comparison, PL peak at 570 nm was observed in the other sample, the SiOx layer of which was deposited by reactive sputtering from Si target. The compositional distributions of these samples were analyzed by X-ray photoelectron spectroscopy (XPS).

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9

Iskhakzay, R. M. Kh, V. N. Kruchinin, V. Sh Aliev, V. A. Gritsenko, E. V. Dementieva, and M. V. Zamoryanskaya. "Charge Transport in Nonstoichiometric SiOx Obtained by Treatment of Thermal SiO2 in Hydrogen Plasma of Electronic-Cyclotron Resonance." Russian Microelectronics 51, no. 1 (February 2022): 24–35. http://dx.doi.org/10.1134/s1063739721060081.

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Abstract Currently, a new generation of high-speed, information-intensive resistive memory based on nonstoichiometric dielectrics is being developed. The electron structure of nonstoichiometric silicon oxide SiOx is set by the value of parameter x. It is found that the treatment of thermal SiO2 in hydrogen plasma electron cyclotron resonance leads to the enrichment of silicon oxide with excess silicon, which in turn leads to the appearance of electron and hole traps in SiOx. SiOx conductivity is bipolar: electrons are injected from negatively biased silicon and holes are injected from positively biased silicon. Cathodoluminescence (CL) experiments confirm the assumption that the traps in SiOx are due to the excess silicon. p++-Si(100)/SiOx/Ni memristor metal-dielectric-semiconductor (MDS) structures are fabricated based on the developed procedure for the preparation of nonstoichiometric oxide in hydrogen plasma of electron cyclotron resonance. Such structures have the properties of resistive switching of SiOx that do not require a forming operation.

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10

Kawasaki, Masahiro, Masateru Nose, Ichiro Onishi, and Makoto Shiojiri. "Structural Investigation of AlN/SiOx Nanocomposite Hard Coatings Fabricated by Differential Pumping Cosputtering." Microscopy and Microanalysis 22, no. 3 (April 12, 2016): 673–78. http://dx.doi.org/10.1017/s1431927616000611.

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AbstractAlN/SiOx nanocomposite coatings fabricated by differential pumping cosputtering (DPCS) were investigated by analytical electron microscopy. The DPCS system consists of two halves of a Chamber, A and B, for radio frequency (RF) magnetron sputtering deposition of different materials, and a substrate holder that rotates through the chambers. Al and SiO2 were sputtered in gas environments with a flow mixture of N2 and Ar gases at RF power of 200 W in the Al Chamber A and a flow of Ar gas at RF powers of 49 W in the SiO2 Chamber B. The substrates of (001) Si wafers heated at 250°C were rotated for 1,080 min at 3 rpm and alternately deposited by AlN and SiO2. AlN columnar crystals grew at a rate of ~0.3 nm/revolution preferentially along the hexagonal [0001] axis. Amorphous silicon oxide (a-SiOx), deposited at a rate of ~0.2 nm/revolution, was coagulated preferentially along the boundaries between the AlN columns and also the interfaces between the subgrains within the AlN columns. The a-SiOx played an important role in the increase in mechanical hardness of the AlN/SiOx composite coating by disturbing deformation of AlN crystal lattices.

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11

Devan, Rupesh S., Shun-Yu Gao, Yu-Rong Lin, Shun-Rong Cheng, Chia-Er Hsu, Chia-Hao Chen, Hung-Wei Shiu, Yung Liou, and Yuan-Ron Ma. "Scanning Photoemission Spectromicroscopic Study of 4-nm Ultrathin SiO3.4 Protrusions Probe-Induced on the Native SiO2 Layer." Microscopy and Microanalysis 17, no. 6 (October 11, 2011): 944–49. http://dx.doi.org/10.1017/s1431927611011901.

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AbstractAtomic force microscopy probe-induced large-area ultrathin SiOx (x ≡ O/Si content ratio and x > 2) protrusions only a few nanometers high on a SiO2 layer were characterized by scanning photoemission microscopy (SPEM) and X-ray photoemission spectroscopy (XPS). SPEM images of the large-area ultrathin SiOx protrusions directly showed the surface chemical distribution and chemical state specifications. The peak intensity ratios of the XPS spectra of the large-area ultrathin SiOx protrusions provided the elemental quantification of the Si 2p core levels and Si oxidation states (such as the Si4+, Si3+, Si2+, and Si1+ species). The O/Si content ratio (x) was evidently determined by the height of the large-area ultrathin SiOx protrusions.

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12

Ma, Hong-Ping, Jia-He Yang, Jian-Guo Yang, Li-Yuan Zhu, Wei Huang, Guang-Jie Yuan, Ji-Jun Feng, Tien-Chien Jen, and Hong-Liang Lu. "Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice." Nanomaterials 9, no. 1 (January 3, 2019): 55. http://dx.doi.org/10.3390/nano9010055.

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Atomic scale control of the thickness of thin film makes atomic layer deposition highly advantageous in the preparation of high quality super-lattices. However, precisely controlling the film chemical stoichiometry is very challenging. In this study, we deposited SiOx film with different stoichiometry by plasma enhanced atomic layer deposition. After reviewing various deposition parameters like temperature, precursor pulse time, and gas flow, the silicon dioxides of stoichiometric (SiO2) and non-stoichiometric (SiO1.8 and SiO1.6) were successfully fabricated. X-ray photo-electron spectroscopy was first employed to analyze the element content and chemical bonding energy of these films. Then the morphology, structure, composition, and optical characteristics of SiOx film were systematically studied through atomic force microscope, transmission electron microscopy, X-ray reflection, and spectroscopic ellipsometry. The experimental results indicate that both the mass density and refractive index of SiO1.8 and SiO1.6 are less than SiO2 film. The energy band-gap is approved by spectroscopic ellipsometry data and X-ray photo-electron spectroscopy O 1s analysis. The results demonstrate that the energy band-gap decreases as the oxygen concentration decreases in SiOx film. After we obtained the Si-rich silicon oxide film deposition, the SiO1.6/SiO2 super-lattices was fabricated and its photoluminescence (PL) property was characterized by PL spectra. The weak PL intensity gives us greater awareness that more research is needed in order to decrease the x of SiOx film to a larger extent through further optimizing plasma-enhanced atomic layer deposition processes, and hence improve the photoluminescence properties of SiOx/SiO2 super-lattices.

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13

Yoon, Jong-Hwan. "Fabrication of Sn@Al2O3 Core-shell Nanoparticles for Stable Nonvolatile Memory Applications." Materials 12, no. 19 (September 24, 2019): 3111. http://dx.doi.org/10.3390/ma12193111.

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Sn@Al2O3 core-shell nanoparticles (NPs) with narrow spatial distributions were synthesized in silicon dioxide (SiO2). These Sn@Al2O3 core-shell NPs were self-assembled by thermally annealing a stacked structure of SiOx/Al/Sn/Al/SiOx sandwiched between two SiO2 layers at low temperatures. The resultant structure provided a well-defined Sn NP floating gate with a SiO2/Al2O3 dielectric stacked tunneling barrier. Capacitance-voltage (C-V) measurements on a metal-oxide-semiconductor (MOS) capacitor with a Sn@Al2O3 core-shell NP floating gate confirmed an ultra-high charge storage stability, and the multiple trapping of electron at the NPs, as expected from low-k/high-k dielectric stacked tunneling layers and metallic NPs, respectively.

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14

Trang, Giap Thi Thuy, N. H. Linh, N. T. T. Linh, and P. H. Kien. "The Study of Dynamics Heterogeneity in SiO2 Liquid." HighTech and Innovation Journal 1, no. 1 (March 1, 2020): 1–7. http://dx.doi.org/10.28991/hij-2020-01-01-01.

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A molecular dynamics simulation has been carried out to investigate the dynamics heterogeneity SiO2 liquid at 2600 K and ambient pressure. We indicate that the diffusion in the liquid is realized by the rate of effective reaction, SiOx®SiOx’ and OSiy®OSiy’. Moreover, the reactions are non-uniform happened, but they are spatially clustered. In addition, we found the clustering from different sets of atoms specified by the mobility of atom or frequency of reactions. We found that the clustering become more pronounced at ambient pressure. This evidences the dynamics heterogeneity in the SiO2 liquid.

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15

Prikryl, Radek, Pavel Otrisal, Vladimir Obsel, Lubomír Svorc, Radovan Karkalic, and Jan Buk. "Protective Properties of a Microstructure Composed of Barrier Nanostructured Organics and SiOx Layers Deposited on a Polymer Matrix." Nanomaterials 8, no. 9 (August 31, 2018): 679. http://dx.doi.org/10.3390/nano8090679.

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The SiOx barrier nanocoatings have been prepared on selected polymer matrices to increase their resistance against permeation of toxic substances. The aim has been to find out whether the method of vacuum plasma deposition of SiOx barrier nanocoatings on a polyethylene terephthalate (PET) foil used by Aluminium Company of Canada (ALCAN) company (ALCAN Packaging Kreuzlingen AG (SA/Ltd., Kreuzlingen, Switzerland) within the production of CERAMIS® packaging materials with barrier properties can also be used to increase the resistance of foils from other polymers against the permeation of organic solvents and other toxic liquids. The scanning electron microscopy (SEM) microstructure of SiOx nanocoatings prepared by thermal deposition from SiO in vacuum by the Plasma Assisted Physical Vapour Deposition (PA-PVD) method or vacuum deposition of hexamethyldisiloxane (HMDSO) by the Plasma-enhanced chemical vapour deposition (PECVD) method have been studied. The microstructure and behavior of samples when exposed to a liquid test substance in relation to the barrier properties is described.

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16

Chae, Somin, Hyung-kyu Lim, and Sangheon Lee. "Computation-Based Investigation of Motion and Dynamics of Lithium in Phase Separated Silicon-Oxide Anode Materials." ECS Meeting Abstracts MA2022-01, no. 55 (July 7, 2022): 2269. http://dx.doi.org/10.1149/ma2022-01552269mtgabs.

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Si attracts significant attention as an alternative anode material to replace the conventional graphite anode in lithium-ion batteries (LIBs). Si offers extremely high theoretical energy-storage capacity of 4200 mAh/g for Li4.4Si, while the theoretical energy-storage capacity of graphite is only 372 mAh/g for Li/C6. In addition, Si is abundant, eco-friendly, and non-toxic, and it also has a safe thermodynamic potential with an average voltage of about 0.4 V vs. Li+/Li, making them attractive candidates for LIB anodes. However, the capacity of the Si anode exhibits a relatively high initial charge capacity and then rapidly decreases as the charge/discharge cycle proceeds, hampering its extensive application. This rapid performance degradation can be attributed to the poor connection between the active material and the current collector resulting from the severe volume expansion and contraction of the Si particles during the repeated charge and discharge cycles, respectively. Controlled addition of O to Si is often taken as a viable approach to utilize Si as an anode material. Silicon suboxides (SiOx, 0 < x < 2), compared with Si, offer a low energy capacity but a high stability against volume expansion. As a result, silicon monoxide (SiO) anodes are indeed commercialized by being blended with graphite. However, only low amounts (about 5 wt%) of SiO are blended with graphite because of the poor first cycle efficiency of SiO. During the charge process, SiOx reacts with Li and produces in-situ byproducts such as Li2O and Li-silicates, which are irreversible in following discharge cycles. This irreversible Li consumption is known to decrease the initial Coulombic efficiency (ICE) of SiO, typically below 75%. The low ICE of SiOx along with its inherently poor electronic conductivity leads to poor rate performance and increased capacity decay, hindering its substantial application in LIBs. To realize more extensive application of SiOx for LIB anodes, physical properties of SiOx should be improved in a direction to mitigate the low ICE issue. In this study, we investigate the motion and dynamics of a Li atom in SiOx by performing a series of first principles-based atomistic simulations. To this end, we perform Monte Carlo simulations within a continuous random network model to generate realistic SiOx structures with varying O-to-Si ratios. Then, we implement a density-functional theory calculation-based path sampling scheme to obtain detailed thermodynamic information when a Li atom penetrates a SiO matrix. Subsequent electronic structure analysis reveals that the thermodynamic stability of a Li atom is determined by local Si-O network environment surrounding Li. The identified thermodynamic information regarding the Li dynamics in SiO provides additional insight into the origin and solutions of the low ICE, highlighting the importance of controlling the SiO morphology during the synthesis of SiO. This fundamental understanding can be an important theoretical basis for developing practically applicable high-ICE silicon suboxide-based anode materials. Figure 1

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17

Ding, Zikun, Zhichao Wang, Bowen Zhang, Guo-Quan Lu, and Yun-Hui Mei. "A Reliable Way to Improve Electrochemical Migration (ECM) Resistance of Nanosilver Paste as a Bonding Material." Applied Sciences 12, no. 9 (May 9, 2022): 4748. http://dx.doi.org/10.3390/app12094748.

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Electrochemical migration (ECM) of sintered nano-Ag could be a serious reliability concern for power devices with high-density packaging. An anti-ECM nano-Ag-SiOx paste was proposed by doping 0.1wt% SiOx nanoparticles rather than previously used expensive noble metals, e.g., palladium. The ECM lifetime of the sintered nano-Ag-SiOx was 1.5 to 3 times longer than that of the sintered nano-Ag, due to the fact that the SiOx could protect the Ag from oxidation. The thermo-mechanical reliability of the sintered nano-Ag-SiOx was also improved by sintering under 5 MPa assisted pressure. The lesser porosity and smaller grain boundaries of the sintered nano-Ag-SiOx could also be beneficial to retard the silver ECM. In the end, a double-sided semiconductor device was demonstrated to validate the better resistance to the ECM using the sintered nano-Ag-SiOx.

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Broggi, Andrea, Eli Ringdalen, and Merete Tangstad. "Evolution of SiO_x Shell Layers on SiC-SiO_x Core-Shell Nanowires." Materials Science Forum 1004 (July 2020): 479–89. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.479.

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Composite core-shell SiC-SiOx nanowires can be produced by heating quartz and SiC powders, with addition of Ar(g) or He(g). The two powders are mixed to create pellets, which will react to SiO(g) and CO(g) at elevated temperatures. The two gases will react on a colder surface, producing a web of SiC-SiOx nanowires. The product serves as a precursor for SiC nanowires production. During the process, silicon and oxygen accumulate at high energy points, forming SiOx nodules. Nodules can either generate in proximity of stacking faults, or where two or more nanowires are close to each other. The present work investigates the role of crystal defects in the wettability between silica and silicon carbide. Samples were collected and analyzed under Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). The results show that β-SiC grows mainly in the [111] direction. Crystal defects are located in the SiC core-phase. SiOx initially develops a uniform layer as thick as the core-phase itself. SiOx nodules would first form where the defects are present, by accumulating at high energy sites. Droplets on a flat surface imply poor wettability. The mechanism of formation of the nodules is compared to two earlier proposed theories. In conclusion, the wettability of SiOx and SiC at nanoscale is controlled by the presence of crystallographic defects. Continuous SiOx layers and bead-like structures can be found in the same temperature interval. The microstructural changes depend on the local energy balance.

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19

Feng, Xuejiao, Hongmin Cui, Zhenming Li, Rongrong Miao, and Nanfu Yan. "Scalable Synthesis of Dual-Carbon Enhanced Silicon-Suboxide/Silicon Composite as Anode for Lithium Ion Batteries." Nano 12, no. 07 (July 2017): 1750084. http://dx.doi.org/10.1142/s1793292017500849.

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The SiOx/Si composite enhanced by dual-carbon (i.e., multiwall carbon nanotubes and carbon) was fabricated from the micro silicon monoxide (SiO) by the combination of high-energy mechanical milling, spray drying and pyrolysis. The obtained SiOx/Si particles were composed of Si-suboxide and embedded nano-sized Si crystallites. As one of dual-carbons, the multi-walled carbon nanotubes were directly scaffolded of anchoring the SiOx/Si composite particles through spray drying. Another carbon source was directly deposited on the surface of the SiOx/Si by means of the carbonization of phenol–formaldehyde resin. Nano-sized silicon embedded in the Si-suboxide matrix and dual-carbon provided a compromise between the reversible capacity and cycle stability related to the volume change. The obtained SiOx/Si/MWCNT/PC-1 electrode delivered an initial capacity of 936.5[Formula: see text]mAh g[Formula: see text] and the reversible capacity was maintained at 825.9[Formula: see text]mAh g[Formula: see text] with excellent capacity retention of 87.5% on the 200th cycle versus the 6th one (compared with the same current rate). In contrast, although the SiOx/Si presented the higher initial capacity of 1271.4[Formula: see text]mAh g[Formula: see text], its capacity dropped quickly after several cycles and capacity retention was only 25.6% versus the 6th cycle after 100 cycles.

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20

Lin, Gong-Ru. "Spectroscopic Analysis on Metal-Oxide-Semiconductor Light-Emitting Diodes with Buried Si Nanocrystals and Nano-Pyramids in SiOx Film." Journal of Nanoscience and Nanotechnology 8, no. 3 (March 1, 2008): 1092–100. http://dx.doi.org/10.1166/jnn.2008.18157.

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The difference between the white and near-infrared electroluminescence of metal-oxide-semiconductor light-emitting diodes fabricated on 1,100 °C-annealed Si-rich SiOx/p-Si substrate with interfacial pyramidal Si dots (Si nano-pyramids)was characterized. By changing the substrate temperature and induced coupled plasma power during the plasma enhanced chemical vapor deposition of Si-rich SiOx films, the effects of the growth conditions on the defect- and Si nano-pyramid-related carrier transport and Si nanocrystal-related electroluminescence spectroscopy were also investigated. The annealed Si-rich SiOx/p-Si films grown at higher synthesized substrate temperate (350 °C)show the larger Si nano-pyramids precipitating near the Si/SiO2 interface. The indium tin oxide/Si-rich SiOx/p-Si/Al metal-oxide-semiconductor light-emitting diodes with Si-rich SiOx films exhibit different white-light electroluminescence spectra at wavelengths from 400 to 650 nm. The Si nanocrystal-related electroluminescence spectra at 650–850 nm are confirmed, whereas the electroluminescence spectra are shorter wavelengths is attributed to oxygen related defects. These defects become an electron-preferred transporting path within the Si-rich SiOx film, whose densities are decreased by increasing the substrate temperature or reducing the induced coupled plasma power. Defect-related white-light electroluminescence emits power for a relatively short lifetime. The lifetime can be lengthened and the electroluminescence power can be raised simultaneously by increasing deposition temperature to 350 °C and adjusting the induced coupled plasma power to a threshold of 30 W, which effectively increases the densities of Si nanocrystals and nano-pyramids in the Si-rich SiOx film with Si concentration of up to 40 at%. A nearly defect-free Si-rich SiOx sample can be grown under such conditions, which contributes to the most stable and largest near-infrared electroluminescence with the longest lifetime, although the power–current slope of purely Si nanopyramid related electroluminescence at near-infrared wavelengths is slightly lower.

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21

Curiel, Mario, Ivan Petrov, Nicola Nedev, Diana Nesheva, Mauro R. Sardela, Yuya Murata, Benjamin Valdez, Emil Manolov, and Irina Bineva. "Formation of Si Nanocrystals in Thin SiO₂ Films for Memory Device Applications." Materials Science Forum 644 (March 2010): 101–4. http://dx.doi.org/10.4028/www.scientific.net/msf.644.101.

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Анотація:

X-ray Diffraction and Reflectivity, Transmission Electron Microscopy and Atomic Force Microscopy were applied to study the effect of thermal annealing on the properties of thin SiOx films (~ 15 nm) prepared by thermal evaporation of SiO in vacuum. It has been shown that furnace annealing at 1000 oC causes phase separation and formation of uniformly distributed Si nanocrystals into a SiO2 matrix. Clockwise hysteresis has been observed in the C-V curves measured and explained by assuming charging and discharging of the NCs with carriers, which tunnel from the Si substrate.

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22

Díaz-Becerril, T., G. García-Salgado, A. Coyopol, E. Rosendo-Andrés, and H. Juárez. "PL Properties of SiO_x Obtained by HFCVD Technique." Materials Science Forum 636-637 (January 2010): 444–49. http://dx.doi.org/10.4028/www.scientific.net/msf.636-637.444.

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Анотація:

In this work, SiOx films were deposited on crystalline silicon substrates and their microstructure and photoluminescent properties are reported. The films were deposited by the Hot Filament Chemical Vapor Deposition (HFCVD) technique using molecular hydrogen (H2) and silica glass (SiO2) as reactants. The H2 becomes atomic hydrogen when is flowed through a tungsten wire heated at 2000 °C. According to the chemical reaction, the atomic hydrogen reacts with the solid source (SiO2) and a SiOx film on a substrate is obtained. From FTIR and room temperature photoluminescence measurements can be concluded that, regions with different average size of silicon nano-clusters in the oxide are formed and they probably are the responsible for the light emission in the visible range.

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23

Kizjak, Anatoliy, Anatoliy Evtukh, Olga Steblova, and Yuriy Pedchenko. "Electron Transport through Thin SiO₂ Films Containing Si Nanoclusters." Journal of Nano Research 39 (February 2016): 169–77. http://dx.doi.org/10.4028/www.scientific.net/jnanor.39.169.

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The electron transport mechanisms through nanocomposite SiO2(Si) films containing Si nanoclusters into dielectric SiO2 matrix have been investigated. SiO2(Si) films were obtained by oxide assisted growth. At the first stage the SiOx films with different content of excess Si were deposited by LP CVD method. Second stage includes high temperature (T=1100 C) annealing of SiOx films that promotes formation of Si nanocrystals. Current transport through SiO2(Si) films were studied in temperature range 100-350 K. As it was observed the dominant mechanism of electron transport depends as on voltage and temperature. The Mott’s conductivity caused by traps near Fermi level was revealed in low-voltage range for all temperatures. At increasing the voltage the SCLC conductivity is observed for films with higher content of excess silicon while in case low content of Si the Pool-Frenkel mechanism dominates. The further increase in voltage results in a double carrier injection.

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24

Sarikov, Andrey. "Thermodynamic Theory of Phase Separation in Nonstoichiometric Si Oxide Films Induced by High-Temperature Anneals." Nanomanufacturing 3, no. 3 (July 3, 2023): 293–314. http://dx.doi.org/10.3390/nanomanufacturing3030019.

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Анотація:

High-temperature anneals of nonstoichiometric Si oxide (SiOx, x < 2) films induce phase separation in them, with the formation of composite structures containing amorphous or crystalline Si nanoinclusions embedded in the Si oxide matrix. In this paper, a thermodynamic theory of the phase separation process in SiOx films is proposed. The theory is based on the thermodynamic models addressing various aspects of this process which we previously developed. A review of these models is provided, including: (i) the derivation of the expressions for the Gibbs free energy of Si oxides and Si/Si oxide systems, (ii) the identification of the phase separation driving forces and counteracting mechanisms, and (iii) the crystallization behavior of amorphous Si nanoinclusions in the Si oxide matrix. A general description of the phase separation process is presented. A number of characteristic features of the nano-Si/Si oxide composites formed by SiOx decomposition, such as the local separation of Si nanoinclusions surrounded by the Si oxide matrix; the dependence of the amount of separated Si and the equilibrium matrix composition on the initial Si oxide stoichiometry and annealing temperature; and the correlation of the presence of amorphous and crystalline Si nanoinclusions with the presence of SiOx (x < 2) and SiO2 phase, respectively, in the Si oxide matrix, are explained.

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25

Min, Kwan Hong, Sungjin Choi, Myeong Sang Jeong, Sungeun Park, Min Gu Kang, Jeong In Lee, Yoonmook Kang, Donghwan Kim, Hae-Seok Lee, and Hee-eun Song. "Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance–Voltage Measurement." Energies 13, no. 7 (April 8, 2020): 1803. http://dx.doi.org/10.3390/en13071803.

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Анотація:

A thin silicon oxide (SiOx) layer (thickness: 1.5–2.0 nm) formed at an Al2O3/Si interface can enhance the interface properties. However, it is challenging to control the characteristics of thin SiOx layers because SiOx forms naturally during Al2O3 deposition on Si substrates. In this study, a ~1.5 nm-thick SiOx layer was inserted between Al2O3 and Si substrates by wet chemical oxidation to improve the passivation properties. The acidic solutions used for wet chemical oxidation were HCl:H2O2:H2O, H2SO4:H2O2:H2O, and HNO3. The thicknesses of SiOx layers formed in the acidic solutions were ~1.48, ~1.32, and ~1.50 nm for SiOx-HCl, SiOx-H2SO4, and SiOx-HNO3, respectively. The leakage current characteristics of SiOx-HNO3 were better than those of the oxide layers formed in the other acidic solutions. After depositing a ~10 nm-thick Al2O3 on an SiOx-acidic/Si structure, we measured the effective carrier lifetime using quasi steady-state photoconductance and examined the interfacial properties of Al2O3/SiOx-acidic/Si using surface carrier lifetime simulation and capacitance–voltage measurement. The effective carrier lifetime of Al2O3/SiOx-HNO3/Si was relatively high (~400 μs), resulting from the low surface defect density (2.35–2.88 × 1010 cm−2eV−1). The oxide layer inserted between Al2O3 and Si substrates by wet chemical oxidation helped improve the Al2O3/Si interface properties.

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26

Xu, Linhua, Gaige Zheng, Min Lai, Fenglin Xian, Shixin Pei, Junfeng Wang, Liming Qian, and Fang Gu. "Photoluminescent behavior of ZnO nanoparticles in a sandwich-like structure SiOx/ZnO/SiOx." Optik 137 (May 2017): 142–47. http://dx.doi.org/10.1016/j.ijleo.2017.02.107.

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27

Jung, Taek-Kyun, Min Ryou, Ji-Woon Lee, Soong-Keun Hyun, Han Gil Na, Kyeonghwan Choe, and Changhyun Jin. "Emission of SiOx Nanowires Resulting from Pressure Changes in a Closed System Comparable to a Tungsten Electron Gun at a High Voltage." Nano 12, no. 07 (July 2017): 1750083. http://dx.doi.org/10.1142/s1793292017500837.

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Анотація:

SiOx nanowire emission with changes in the vapor pressure of Sn metal results in a screw motion of SiOx nanowires in a closed system consisting of Sn and SiOx. A convoluted flouncing-off process is elucidated here, in which the elementary particles are not electrons, but nanowires. In order to understand the unprecedented synthetic phenomena, the system that emits SiOx nanowires is compared with tungsten electron gun by comparing the component, functionalization, and theoretical background of both the techniques. The results so obtained, which are the first of its kind, open the way not only to produce three-dimensional micro- and nano-structures from one-dimensional nanostructures without requiring any additional artificial manipulation process but also to focus them onto a desired small region for elaborate deposition.

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Hino, Shiro, Tomohiro Hatayama, Jun Kato, Naruhisa Miura, Tatsuo Oomori, and Eisuke Tokumitsu. "Anomalously High Channel Mobility in SiC-MOSFETs with Al₂O₃/SiO_x/SiC Gate Structure." Materials Science Forum 600-603 (September 2008): 683–86. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.683.

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4H-SiC MOSFETs with Al2O3/SiC and Al2O3/SiOx/SiC gate structures have been fabricated and characterized. Al2O3 was deposited by metal-organic chemical vapor deposition (MOCVD) and the SiOx layer was formed by dry-O2 oxidation. Insertion of 1.2 nm-thickness-SiOx layer drastically improves the channel mobility of Al2O3/SiC-MOSFET and anomalously high field effect mobility (μFE) of 284 cm2/Vs was obtained. The μFE of Al2O3/SiOx/SiC-MOSFET with various SiOx thickness was investigated, and it was found that insertion of a thin SiOx layer (< 2 nm) followed by the low temperature deposition of Al2O3 results in Al2O3/SiOx/SiC-MOSFET with such a high channel mobility.

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29

Miyazaki, H., and T. Goto. "SiOx films prepared using RF magnetron sputtering with a SiO target." Journal of Non-Crystalline Solids 352, no. 4 (April 2006): 329–33. http://dx.doi.org/10.1016/j.jnoncrysol.2005.12.008.

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30

Apostolova, R. D., and E. M. Shembel. "On ways of conversion of silicon dioxide SiO2 in lithium battery systems: a review." Voprosy Khimii i Khimicheskoi Tekhnologii, no. 2 (May 2023): 4–24. http://dx.doi.org/10.32434/0321-4095-2023-147-2-4-24.

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Анотація:

Silicon and silicon oxide compounds SiO, SiO2, SiOx and SiOC are considered as a promising family of materials for high-energy lithium batteries due to their high theoretical capacity, widespread in nature, low cost, environmental safety and ease of synthesis. Silicon oxide compounds have replaced silicon in the hope of improving the discharge characteristics of lithium batteries. Oxides of silicon show excellent stability during cycling after structure optimization. However, they suffer from the problem of low Coulomb efficiency and high voltage hysteresis (difference in charge and discharge voltage), which prevents their practical application. Significant bulk expansion of silicon oxides during cycling and irreversible loss of capacity in the initial cycles are an obstacle to their large-scale practical use. This review pays attention to the peculiarities of the conversion of SiO2 and its hybrid compounds into the redox reaction with lithium and ways to overcome existing problems. Silicon dioxide is more resistant to bulk expansion than silicon. Various structural formats of nanometer SiO2 have been developed and tested for lithium batteries, such as nanotubes, nanorods, nanowires, nanoparticles, thin films. To solve problems in the SiO2/Li system, a number of SiO2 composites with carbon, graphene, active and inactive metals, etc. have also been proposed and studied. Analyzing the results of the studies, we found a significant role of the solid electrolyte interphase film in the efficient conversion of SiO2. In turn, the formation of a film on silicon dioxide depends on the method of synthesis of dioxide, which introduces impurities into the final synthesis product. Impurities contribute to the distortion of the solid electrolyte interphase film during the cycling of the SiO2/Li system, and the loss of discharge capacity. SiO2 dioxide obtained in a dry environment of a ball mill differs favorably from that obtained from solutions. Many efforts have been made to overcome the problems in Si-containing electrode materials, however, they have to go a certain way for large-scale practical application.

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31

Zhi, Hui, Jing Lin, and Bo Zhang. "Properties of SiO_x/PET Thin Films Prepared by RF Magnetron Sputtering." Advanced Materials Research 380 (November 2011): 238–43. http://dx.doi.org/10.4028/www.scientific.net/amr.380.238.

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The SiOx thin films for food packaging were deposited by RF magnetron sputtering physical vapor technology on the substrates of 20μm polyethylene terephthalate (PET) by using a pure SiO2 target. The molecular structure of thin film surface composition were detected and analyzed by Fourier transform infrared spectroscopy (FTIR); and the barrier properties of the films were examined by MOCON water vapor permeability testing instrument, also，the relationship maps between permeability and process parameters were drew and the process parameters were optimized; The mechanical properties of thin films were tested by electronic tensile testing machine, and the curves of the relationship between the mechanical properties and process parameters depicted. The SiOx/PET thin films of the lowest water vapor permeability were prepared under the pressure of 7.5×10-3 Pa, the sputtering pressure of 0.23 Pa, the deposition time of 30min and the sputtering power of 1500W. The yield strength increased 4 times and elastic modulus increased 3 times when the water vapor permeability of the SiOx/PET thin films rose about 10 times of the blank.

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32

Khokhar, Muhammad Quddamah, Shahzada Qamar Hussain, Muhammad Aleem Zahid, Duy Phong Pham, Eun-Chel Cho, and Junsin Yi. "Numerical Simulation and Experiment of a High-Efficiency Tunnel Oxide Passivated Contact (TOPCon) Solar Cell Using a Crystalline Nanostructured Silicon-Based Layer." Applied Sciences 12, no. 1 (December 31, 2021): 392. http://dx.doi.org/10.3390/app12010392.

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We report on the tunnel oxide passivated contact (TOPCon) using a crystalline nanostructured silicon-based layer via an experimental and numerical simulation study. The minority carrier lifetime and implied open-circuit voltage reveals an ameliorated passivation property, which gives the motivation to run a simulation. The passivating contact of an ultra-thin silicon oxide (1.2 nm) capped with a plasma enhanced chemical vapor deposition (PECVD) grown 30 nm thick nanocrystalline silicon oxide (nc-SiOx), provides outstanding passivation properties with low recombination current density (Jo) (~1.1 fA/cm2) at a 950 °C annealing temperature. The existence of a thin silicon oxide layer (SiO2) at the rear surface with superior quality (low pinhole density, Dph < 1 × 10−8 and low interface trap density, Dit ≈ 1 × 108 cm−2 eV−1), reduces the recombination of the carriers. The start of a small number of transports by pinholes improves the fill factor (FF) up to 83%, reduces the series resistance (Rs) up to 0.5 Ω cm2, and also improves the power conversion efficiency (PEC) by up to 27.4%. The TOPCon with a modified nc-SiOx exhibits a dominant open circuit voltage (Voc) of 761 mV with a supreme FF of 83%. Our simulation provides an excellent match with the experimental results and supports excellent passivation properties. Overall, our study proposed an ameliorated knowledge about tunnel oxide, doping in the nc-SiOx layer, and additionally about the surface recombination velocity (SRV) impact on TOPCon solar cells.

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33

Lee, Tae Rim, Soohwan Kim, Hyundong Yoo, and Hansu Kim. "Improving Lithium Storage Properties of SiO_x Nanosheets By Introducing MoO₂ Nanoparticles." ECS Meeting Abstracts MA2022-01, no. 4 (July 7, 2022): 513. http://dx.doi.org/10.1149/ma2022-014513mtgabs.

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Анотація:

Silicon oxides (SiOx) have been recognized as promising candidates to replace commercial graphite anode materials in lithium-ion batteries. Two-dimensional (2D) microstructure of SiOx nanosheets leads to high capacity retention with the excellent dimensional stability. However, they have the disadvantage of having low specific capacity and low initial Coulombic efficiency. Here, molybdenum dioxide (MoO2) nanoparticles were introduced to compensate for the shortcomings of SiOx nanosheets. MoO2 nanoparticles are chemically bonded to the surface of SiOx nanosheets by Mo-O-Si bond, as a result, showing the improved reversible capacity and initial Coulombic efficiency while maintaining the strength of SiOx nanosheets. The observed improvement can be explained by the synergistic effect resulted by the combination of SiOx nanosheets with zero-dimensional (0D) MoO2 nanoparticles. The former provides favorable microstructures and dimensional stability while the latter offers abnormal lithium storage sites and highly reversible phase transition. In the presentation, the improved lithium storage properties of 2D-SiOx/0D-MoO2 nanocomposites will be discussed in detail.

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34

Ponomarenko, A. A., and I. V. Kormina. "Deflocculant Polyplast 3MB-RC for unformed refractories." NOVYE OGNEUPORY (NEW REFRACTORIES), no. 12 (January 23, 2020): 13–18. http://dx.doi.org/10.17073/1683-4518-2019-12-13-18.

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Анотація:

The influence of the deflocculant of the Russian company Polyplast-UralSib LLC on the properties of the groove and selfdissolving masses for lining the working surfaces of thermal units is considered. It was found that when a deflocculant is introduced into the refractory concrete masses in an amount of 2.0 wt. % satisfactory workability of the mass and the required physical and mechanical properties of concrete after firing at 1000 and 1400 °C are ensured compared to the introduction of imported deflocculants ADW / ADS and SioxX / Siox-Quick. It is shown that the gutter concrete obtained using the Russian deflocculant has higher strength than concrete with an imported deflocculant, including 0.5 wt. % ADW1 and 0.5 wt. % ADS3. Petrographic analysis revealed equal resistance of the trench concrete to the effects of blast furnace slag when using Russian additives and imported SioxX and Siox-Quick in the amount of 2,0 and 0,5 wt. % as deflocculants respectively. Ill. 1. Ref. 26. Tab. 2.

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35

Daves, Walter, A. Krauss, Martin Le-Huu, S. Kronmüller, Volker Haeublein, Anton J. Bauer, and Lothar Frey. "Comparative Study on Metallization and Passivation Materials for High Temperature Sensor Applications." Materials Science Forum 679-680 (March 2011): 449–52. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.449.

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We investigated the performance of different metallization/passivation systems for high temperature applications. The metallizations comprised a 150 nm sputtered Pt or a 150 nm e-beam evaporated PtRh layer on Ti/TiN underlayers, respectively. The passivation coatings consisted of amorphous PECVD SiOx, of amorphous stress-reduced PECVD SiNy, and of a SiOx/ SiNy stack. For samples with SiOx and SiOx/ SiNy passivation layers the electrical properties changed after a short high temperature anneal at 600 °C but then remained stable during further annealing. This was attributed to the formation of PtTi alloys, which stabilized the metallization stack. In samples with SiNy passivation a significant Pt out-diffusion into the passivation layer was observed. This led to a degradation of the electrical and mechanical properties. The best performance was achieved with Pt-based metallizations and SiOx or SiOx/SiNy passivations.

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36

Wang, Chenyang, Tianyi Ma, Xingge Liu, Zhi Liu, Zenghua Chang, and Jing Pang. "Effect of Graphite Morphology on the Electrochemical and Mechanical Properties of SiOx/Graphite Composite Anode." Batteries 9, no. 2 (January 24, 2023): 78. http://dx.doi.org/10.3390/batteries9020078.

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Mixing SiOx materials with graphite materials has become a key technology to improve their performance, but it is still unclear what kind of graphite materials help to construct a stable electrode structure. The purpose of this study is to explore the effect of graphite morphology on the structure and performance of SiOx/C composite electrodes (850 mAh g−1). For the SiOx/C59 composite electrode constructed by the lamellar graphite (C59) with a big aspect ratio and SiOx particles, the SiOx particles agglomerate in the pores of C59 particles. This uneven electrode structure could lead to excessive stress and strain of the electrode during cycling, which causes the anode electrode structure failure and cycling performance deterioration. While the small-size lamellar graphite (SFG15) with random orientation helps to construct stable electrode structure with uniform particle distribution and pore structure, which could reduce the stress and strain change of the electrode during cycling. Thus, the composite electrode (SiOx/SFG15) exhibits better cycling performance compared with SiOx/C59 composite electrode. This work reveals the structure-activity relationship of graphite morphology, electrode structure and the mechanical and electrochemical performance of the electrode, and provides a guide to the design and development of the high capacity SiOx/C composite electrode structure.

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37

Lendyashova, V. V., K. P. Kotlyar, V. O. Gridchin, R. R. Reznik, A. I. Lihachev, I. P. Soshnikov, and G. E. Cirlin. "Effect of wet KOH etching on structural properties of GaN nanowires grown on patterned SiOx/Si substrates." Journal of Physics: Conference Series 2103, no. 1 (November 1, 2021): 012098. http://dx.doi.org/10.1088/1742-6596/2103/1/012098.

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Abstract The possibility of the controlled removal of GaN nanowires (NWs) from an SiOx inhibitor layer of patterned SiOx/Si substrates has been demonstrated. It has been found that the wet KOH etching preserves the selectively grown GaN NWs on Si surface, whereas the GaN NWs grown on inhibitor SiOx layer are removing. The effect is described by the difference in polarity between GaN NWs grown on a Si surface and NWs grown on a SiOx inhibitor layer.

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38

Lee, Jaewoo, Sang Yoon Lee, Heon Yong Jeong, and Sung Oh Cho. "Oxygen Content-Controllable Synthesis of Non-Stoichiometric Silicon Suboxide Nanoparticles by Electrochemical Anodization." Nanomaterials 10, no. 11 (October 27, 2020): 2137. http://dx.doi.org/10.3390/nano10112137.

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Анотація:

A facile route to producing non-stoichiometric silicon suboxide nanoparticles (SiOx NPs, 0 < x < 1) with an adjustable oxygen content is proposed. The process is based on electrochemical anodization involving the application of a strong electric field near the surface of a Si electrode to directly convert the Si electrode into SiOx NPs. The difference in ion mobility between oxygen species (O2− and OH−), formed during anodization, causes the production of non-stoichiometric SiOx on the surface of the Si while, simultaneously, fluoride ions in the electrolyte solution etch the formed SiOx layer, generating NPs under the intense electric field. The adjustment of the applied voltage and anodization temperature alters the oxygen content and the size of the SiOx NPs, respectively, allowing the characteristics of the NPs to be readily controlled. The proposed approach can be applied for mass production of SiOx NPs and is highly promising in the field of batteries and optoelectronics.

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39

Ge, Jiawei, Honglie Shen, Fei Zhou, Yufang Li, Ningyi Yuan, Wangyang Yang, Haobing Zhou, Binbin Xu, Renping Guo, and Peng Xu. "Oxygen-tailoring in SiO_X/C with a covalent interface for high-performance lithium storage." Journal of Materials Chemistry A 10, no. 4 (2022): 1928–39. http://dx.doi.org/10.1039/d1ta07965d.

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Анотація:

Oxygen-tailoring SiOX/C with highly cycling stability is favorable for forming a covalent interface between SiOX and the carbon layer, which further improves its electrochemical performance as a promising anode material for lithium-ion batteries.

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40

Zhi, Hui, Zhi Hui Sun, and Jing Lin. "Optimization of SiO_x/PET Thin Films Prepared by RF Magnetron Sputtering Technology Based on Orthogonal Experiment." Advanced Materials Research 183-185 (January 2011): 2202–6. http://dx.doi.org/10.4028/www.scientific.net/amr.183-185.2202.

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Анотація:

The SiOx thin films were deposited by RF magnetron sputtering physical vapor technology on the substrates of 20μm polyethylene terephthalate（PET）, using a pure SiO2 target. An L15 (33) orthogonal experiment was designed with three factors and three values including deposition time, sputtering power, sputtering pressure. Using OTR test the effect of process parameters were researched. The primary and secondary sequence of the design parameters were acquired by the quadratic multinomial. The result showed that deposition time affected more strongly the OTR of the films than the sputtering pressure, the sputtering power affected least between them. The best SiOx thin films were prepared at a deposition time of 27.9min，a sputtering power of 1825W，a sputtering pressure of 0.3455Pa. The calculated OTR was 0.8387 cc/(m2×day)，which was consistent with the test one.

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41

Zhang, Rong-Jun. "Nonlinear optical properties of silicon nanocrystals grown by a SiOx/SiO2 superlattice approach." Journal of the Korean Physical Society 56, no. 4(1) (April 15, 2010): 1303–6. http://dx.doi.org/10.3938/jkps.56.1303.

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42

Han, Li Hao, Jing Wang, and Ren Rong Liang. "Germanium-Silicon Quantum Dots Produced by Pulsed Laser Deposition for Photovoltaic Applications." Advanced Materials Research 383-390 (November 2011): 6270–76. http://dx.doi.org/10.4028/www.scientific.net/amr.383-390.6270.

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Анотація:

Quantum dots applied in solar cells will be of great importance to enhance the quantum tunneling efficiency and improve the photogenerated current transport. In this study, a new easy-to-operate technology was developed to fabricate germanium-silicon quantum dots in a SiOx matrix. The quantum dots were formed by first deposited germanium-rich SiO on quartz substrate using pulsed laser deposition technique and then annealed under a comparatively high temperature. We have demonstrated a stable and low-cost fabrication process which is much cheaper than the epitaxy method to provide for the fabrication of high density germanium-silicon quantum dots. Quantum dots with diameters of 3~4 nm embedded in the amorphous SiOx layer were clearly observed. The morphological features of the thin film were characterized. The optical properties were performed by Raman spectroscopy, photoluminescence spectrum and XRD test respectively to verify the crystallization of quantum dots in the SiOx matrix. Reflectance spectrum displayed a high light absorption rate in a spectra region from 300 nm to 1200 nm, evidencing that germanium-silicon quantum dots have promising features to be used as absorber for photovoltaic application.

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43

Hsu, Chia-Hsun, Yang-Shih Lin, Hsin-Yu Wu, Xiao-Ying Zhang, Wan-Yu Wu, Shui-Yang Lien, Dong-Sing Wuu, and Yeu-Long Jiang. "Deposition of Silicon-Based Stacked Layers for Flexible Encapsulation of Organic Light Emitting Diodes." Nanomaterials 9, no. 7 (July 23, 2019): 1053. http://dx.doi.org/10.3390/nano9071053.

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Анотація:

In this study, inorganic silicon oxide (SiOx)/organic silicon (SiCxHy) stacked layers were deposited by a radio frequency inductively coupled plasma chemical vapor deposition system as a gas diffusion barrier for organic light-emitting diodes (OLEDs). The effects of thicknesses of SiOx and SiCxHy layers on the water vapor transmission rate (WVTR) and residual stress were investigated to evaluate the encapsulation capability. The experimental results showed that the lowest WVTR and residual stress were obtained when the thicknesses of SiOx and SiCxHy were 300 and 30 nm, respectively. Finally, different numbers of stacked pairs of SiOx/SiCxHy were applied to OLED encapsulation. The OLED encapsulated with the six-pair SiOx/SiCxHy exhibited a low turn-on voltage and low series resistance, and device lifetime increased from 7 h to more than 2000 h.

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44

Ложкина, Д. А., Е. В. Астрова, Р. В. Соколов, Д. А. Кириленко, А. А. Левин, А. В. Парфеньева та В. П. Улин. "Формирование кремниевых нанокластеров при диспропорционировании моноокиси кремния". Физика и техника полупроводников 55, № 4 (2021): 373. http://dx.doi.org/10.21883/ftp.2021.04.50743.9575.

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In this work, the processes of disproportionation of solid-phase silicon monoxide, accompanied by the formation of nanocrystalline silicon precipitates in the medium of amorphous SiOx suboxide (initial composition SiO0.9), have been studied. Based on the data of X-ray diffraction analysis and transmission electron microscopy, the dynamics of changes in the amount, concentration and size of phase precipitates of silicon with an increase in the temperature of isochronous annealing from 800 °C to 1200 °C is traced. It was found that with a monotonic increase in the total mass of the precipitated silicon, the number of its crystallization centers per unit volume nonmonotonically depends on temperature. The activation energy of diffusion of silicon atoms in the SiOx matrix was determined to be Ea1= 1.64 eV, and the activation energy of their transfer from the formed precipitates to the growth medium of SiOx was Ea2 = 2.38 eV. Anisotropic deformation of silicon crystallites precipitated during the disproportionation of SiO has been revealed for the first time. This phenomenon is associated with the difference in the specific volumes of the separated phases and the anisotropy of the growth rate of silicon precipitates formed in a solid amorphous medium.

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45

Ложкина, Д. А., Е. В. Астрова, Р. В. Соколов, Д. А. Кириленко, А. А. Левин, А. В. Парфеньева та В. П. Улин. "Формирование кремниевых нанокластеров при диспропорционировании моноокиси кремния". Физика и техника полупроводников 55, № 4 (2021): 373. http://dx.doi.org/10.21883/ftp.2021.04.50743.9575.

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Анотація:

In this work, the processes of disproportionation of solid-phase silicon monoxide, accompanied by the formation of nanocrystalline silicon precipitates in the medium of amorphous SiOx suboxide (initial composition SiO0.9), have been studied. Based on the data of X-ray diffraction analysis and transmission electron microscopy, the dynamics of changes in the amount, concentration and size of phase precipitates of silicon with an increase in the temperature of isochronous annealing from 800 °C to 1200 °C is traced. It was found that with a monotonic increase in the total mass of the precipitated silicon, the number of its crystallization centers per unit volume nonmonotonically depends on temperature. The activation energy of diffusion of silicon atoms in the SiOx matrix was determined to be Ea1= 1.64 eV, and the activation energy of their transfer from the formed precipitates to the growth medium of SiOx was Ea2 = 2.38 eV. Anisotropic deformation of silicon crystallites precipitated during the disproportionation of SiO has been revealed for the first time. This phenomenon is associated with the difference in the specific volumes of the separated phases and the anisotropy of the growth rate of silicon precipitates formed in a solid amorphous medium.

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46

Molkenova, Anara, and Izumi Taniguchi. "Physical and Electrochemical Properties of SiOx /C Composites Prepared by a Combination of Spray Pyrolysis and High Energy Ball Milling." MRS Proceedings 1775 (2015): 7–12. http://dx.doi.org/10.1557/opl.2015.739.

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ABSTRACTSpray pyrolysis has been widely used to prepare homogeneous and uniform ceramic powders with high purity. In this study, we are proposing ultrasonic spray pyrolysis followed by heat treatment to produce SiOx/C composite powders, where sucrose was used as a carbon source. Furthermore, high energy ball milling of the as-prepared powders in the presence of acetylene black was conducted to activate its electrochemical properties by reducing the particle size and improving the functionalization of the SiOx composite particles. SiOx/C nanocomposite finally obtained at a sucrous concentration of 0.1 mol L-1 showed superior electrochemical properties, and the SiOx/C nanocomposite electrode delivered the first discharge and charge capacities of 1252 and 819 mAh g-1, respectively, with an initial columbic efficiency of 65% at a current density of 50 mAh g-1 in the potential range from 0.01 to 3 V versus Li/Li+.

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47

Zhang, Gai Mei, Qiang Chen, Cun Fu He, and Shou Ye Zhang. "The Morphology of SiO_x Coated PET Film by Ultrasonic Atomic Force Microscopy and Barrier Properties." Advanced Materials Research 295-297 (July 2011): 1600–1605. http://dx.doi.org/10.4028/www.scientific.net/amr.295-297.1600.

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The oxygen transmission rate (OTR) of SiOx coated polyethylene terephthalate (PET) and biaxially oriented polypropylene (BOPP) affected by fine defects is discussed in this paper. With an ultrasonic AFM (UAFM), which is an advantageous to distinguishing tiny defects on/ in the deposited films, it is found that the OTR of the coated films is relevant to the morphology scanned by UAFM. Herein SiOx layers with a thickness in the order of nano-scale were fabricated in 13.56 MHz-radio frequency (RF) -plasma-enhanced chemical vapor deposition (PECVD). The monomer for the coating fabrication is hexamethyldisiloxane (HMDSO). Fourier transform inferred (FTIR) spectra of the deposited coating with a strong peak at 1062 cm-1, corresponding to Si-O-Si stretching vibration, confirm the formation of SiOx coatings through PECVD. The higher OTR value of SiOx coated PET is consistence with defects on film surface and in the subsurface of coatings through UAFM. It obtains that the OTR value of the defect free SiOx coated film was reduced by ca. 89% compared with the defect existence SiOx coated PET.

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48

Lazauskas, A., V. Grigaliunas, A. Guobienė, J. Puišo, I. Prosyčevas, and J. Baltrusaitis. "Polyvinylpyrrolidone surface modification with SiOx containing amorphous hydrogenated carbon (a-C:H/SiOx) and nitrogen-doped a-C:H/SiOx films using Hall-type closed drift ion beam source." Thin Solid Films 538 (July 2013): 25–31. http://dx.doi.org/10.1016/j.tsf.2012.11.109.

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49

Szekeres, A., E. Vlaikova, T. Lohner, Attila Lajos Tóth, I. P. Lisovskyy, S. O. Zlobin, and P. E. Shepeliavyi. "Characterization of Oblique Deposited Nanostructured SiO_x Films by Ellipsometric and IR Spectroscopies." Solid State Phenomena 159 (January 2010): 149–52. http://dx.doi.org/10.4028/www.scientific.net/ssp.159.149.

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Studies of oblique deposited nanostructured SiOx films by ellipsometric and IR spectroscopies are presented, as additional information is obtained by scanning electron microscopy (SEM). The films were deposited onto Si substrates under a 75° incidence vapor by vacuum evaporation of SiO and were annealed in Ar at 950oC. The thickness and composition of the films were estimated from the ellipsometric data analysis applying the Bruggeman effective approximation theory. Three-layer optical model described satisfactory the annealed film structure and verified the formation of nanocrystalline Si clusters. SEM micrographs showed that evaporated films consisted of silicon oxide pillars separated by air space and tilted at an angle of ~57o to Si substrate surface. The thin silica pillars were most probably free from Si-SiO2 interface leading to absence of strong absorption on LO vibrations in the IR spectrum. The estimated porosity factor was ~62 %. By annealing, the film oxidized to SiO2 but it remained columnar with a porosity factor of ~47 %.

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50

Molkenova, Anara, Seitaro Kato, and Izumi Taniguchi. "Synthesis of Nano-Sized SiOx/C Composite by a Drip Combustion in Fluidized Bed Reactor and Its Electrochemical Properties." MRS Proceedings 1775 (2015): 13–18. http://dx.doi.org/10.1557/opl.2015.850.

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ABSTRACTNano-sized SiOx/C composite was successfully prepared by drip combustion in a fluidized bed reactor. A mixture of tetraethyl orthosilicate (TEOS) ant kerosene at a 2:3 volume ratio was used as a precursor solution. The synthesis was carried out between 600 °C and 900 °C. The as-prepared powder (600 °C) consists of SiOx and carbon particles which are approximately ranged from 30 to 80 nm. For the nano-sized SiOx/C composite sample, the heat treatment process was introduced to remove incomplete combustion materials and the dry ball milling was performed to homogenize the distribution of carbon inside the sample. The final sample (nano-sized SiOx/C nanocomposite) was used as an electrode active material and then electrochemical testing was performed. The cell exhibited discharge and charge capacities of 1158 and 533 mAh g-1, respectively, at current density of 50 mAh g-1 in the voltage range between 0.01-3 V versus Li/Li+.

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