Статті в журналах: "A-SiOx:H Thin Films"

1

Alfonsetti, R., L. Lozzi, M. Passacantando, P. Picozzi, and S. Santucci. "Determination of stoichiometry of SiOx thin films using an Auger parameter." Thin Solid Films 213, no. 2 (June 1992): 158–59. http://dx.doi.org/10.1016/0040-6090(92)90276-h.

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2

Zamchiy, Alexandr, Evgeniy Baranov, Sergey Khmel, and Marat Sharafutdinov. "Effect of annealing time on aluminum-induced crystallization of silicon suboxide thin films." EPJ Web of Conferences 196 (2019): 00039. http://dx.doi.org/10.1051/epjconf/201919600039.

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Polycrystalline silicon (poly-Si) thin films were obtained by aluminium induced crystallisation of amorphous silicon suboxide (a-SiOx, x = 0.22) via annealing of a-SiO0.22/Al bilayer structures at 550 °C for 4 - 30 h. The a-SiO0.22/Al thickness ratio was approximately 1. According optical microscopy measurements, the crystallized fraction reached the saturation value of 85% after annealing for 20 h. The further increase in the annealing time didn’t lead to an increase in this value. X-ray diffraction measurements revealed that the formed poly-Si had a strong Si (111) preferred orientation.

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3

Nagatomi, Y., S. Yoshidomi, M. Hasumi, T. Sameshima, and A. Kohno. "Formation of Aluminum Oxide Films on Silicon Surface by Aluminum Evaporation in Oxygen Gas Atmosphere." MRS Proceedings 1426 (2012): 421–26. http://dx.doi.org/10.1557/opl.2012.868.

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ABSTRACTWe report formation of thin aluminum oxide AlOx films on the silicon surface by a simple method of Al metal evaporation in oxygen gas atmosphere. 520 μm thick 30-Ωcm p-type-silicon substrates with a top bare surface and a rear surface coated with 100 nm thick thermally grown SiO2 layers were prepared. AlOx films were formed on the top surfaces by Al metal evaporation up to 20 s in oxygen gas atmosphere at 0.8 Pa with a flow rate of 3 sccm. Samples were subsequently annealed with 9.0x105 Pa H2O vapor at 260°C for 3 h. Measurement of capacitance response to a modulation voltage at 500 kHz as a function of bias gate voltages C-V revealed that AlOx films had the effective oxide thickness ranging from 2.0 and 2.6 nm were formed. C-V measurements also revealed that negative fixed charges were accumulated with a density of 5x1012 cm-2 in AlOx films. Photo-induced carrier microwave absorption measurement resulted in a high minority carrier effective lifetime τeff of 3.6x10-4 s comparable to that of 4.1x10-4 s for thermally grown SiO2 passivation. Field effect passivation was probably caused by negative charges in AlOx so that the surface recombination velocity decreased to 70 cm/s. X-ray reflectivity analysis indicated that the interfacial layer like SiOx was formed between AlOx and Si substrate. High pressure H2O vapor heat annealing caused increase in the density and decrease in the thickness of AlOx layers, although it increased the density and thickness of the interfacial SiOx layer thickness. H2O vapor treatment is effective to improve the quality of nanometer thick AlOxlayer.

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4

Glesener, J. W., J. M. Anthony, and A. Cunningham. "Photoluminescence investigation of a-C: H thin films." Diamond and Related Materials 2, no. 5-7 (April 1993): 670–72. http://dx.doi.org/10.1016/0925-9635(93)90201-c.

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5

Labrador, Natalie Yumiko, and Daniel V. Esposito. "(Invited) Multifunctional Membrane Coated Electrocatalysts." ECS Meeting Abstracts MA2018-01, no. 31 (April 13, 2018): 1875. http://dx.doi.org/10.1149/ma2018-01/31/1875.

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Electrocatalysts are essential components in many emerging electrochemical technologies due to their ability to efficiently facilitate the interconversion between electrical and chemical energy. However, significant improvements in the stability, activity, and selectivity of state-of-the-art electrocatalysts must be made if these technologies are going to play a major role in a sustainable energy future. The vast majority of electrocatalysts used in today’s commercial devices are comprised of metallic nanoparticles or thin films that are deposited onto a conductive support and partially exposed to the bulk electrolyte. By contrast, this work has explored an alternate electrocatalyst architecture in which the active electrocatalyst has been encapsulated by an ultrathin permeable overlayer. Specifically, we encapsulate Pt nanoparticle and thin film electrocatalysts with 2-20 nm thick layers of silicon oxide (SiOx) fabricated using a room temperature deposition process.[1] Through a combination of physical characterization and electroanalytical measurements, we show that these permeable overlayers can serve as nano-scale membranes that provide significant benefits for stabilizing Pt nanoparticles and imparting advanced catalytic functionalities such as poison-resistance. This work has focused on SiOx-encapsulated Pt thin films electrocatalysts for the hydrogen evolution reaction, but the membrane coated electrocatalyst architecture also has great potential as a tunable platform that can be extended to many other materials and chemistries. [1] N. Y. Labrador, X. Li, Y. Liu, J. T. Koberstein, R. Wang, H. Tan, T. P. Moffat, and D. V. Esposito, Nano Letters, 16, 6452-6459, 2016.

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6

Rahman, Mujib Ur, Yonghao Xi, Haipeng Li, Fei Chen, Dongjie Liu, and Jinjia Wei. "Dynamics and Structure Formation of Confined Polymer Thin Films Supported on Solid Substrates." Polymers 13, no. 10 (May 17, 2021): 1621. http://dx.doi.org/10.3390/polym13101621.

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The stability/instability behavior of polystyrene (PS) films with tunable thickness ranging from higher as-cast to lower residual made on Si substrates with and without native oxide layer was studied in this paper. For further extraction of residual PS thin film (hresi) and to investigate the polymer–substrate interaction, Guiselin’s method was used by decomposing the polymer thin films in different solvents. The solvents for removing loosely adsorbed chains and extracting the strongly adsorbed irreversible chains were selected based on their relative desorption energy difference with polymer. The PS thin films rinsed in chloroform with higher polarity than that of toluene showed a higher decrease in the residual film thickness but exhibited earlier growth of holes and dewetting in the film. The un-annealed samples with a higher oxide film thickness showed a higher decrease in the PS residual film thickness. The effective viscosity of PS thin films spin-coated on H-Si substrates increased because of more resistance to flow dynamics due to the stronger polymer–substrate interaction as compared to that of Si-SiOx substrates. By decreasing the film thickness, the overall effective mobility of the film increased and led to the decrease in the effective viscosity, with matching results of the film morphology from atomic force microscopy (AFM). The polymer film maintained low viscosity until a certain period of time, whereupon further annealing occurred, and the formation of holes in the film grew, which ultimately dewetted the film. The residual film decrement, growth of holes in the film, and dewetting of the polymer-confined thin film showed dependence on the effective viscosity, the strength of solvent used, and various involved interactions on the surface of substrates.

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7

Vanek, J., V. Cech, R. Prikryl, J. Zemek, and V. Perina. "Basic characteristics of the a-SiOC∶H thin films prepared by PE CVD." Czechoslovak Journal of Physics 54, S3 (March 2004): C937—C942. http://dx.doi.org/10.1007/bf03166511.

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8

Nagai, Hiroki, Naoki Ogawa, and Mitsunobu Sato. "Deep-Ultraviolet Transparent Conductive MWCNT/SiO2 Composite Thin Film Fabricated by UV Irradiation at Ambient Temperature onto Spin-Coated Molecular Precursor Film." Nanomaterials 11, no. 5 (May 20, 2021): 1348. http://dx.doi.org/10.3390/nano11051348.

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Deep-ultraviolet (DUV) light-transparent conductive composite thin films, consisting of dispersed multiwalled carbon nanotubes (MWCNTs) and SiO2 matrix composites, were fabricated on a quartz glass substrate. Transparent and well-adhered amorphous thin films, with a thickness of 220 nm, were obtained by weak ultraviolet (UV) irradiation (4 mW cm−2 at 254 nm) for more than 6 h at 20−40 °C onto the precursor films, which were obtained by spin coating with a mixed solution of MWCNT in water and Si(IV) complex in ethanol. The electrical resistivity of MWCNT/SiO2 composite thin film is 0.7 Ω·cm, and transmittance in the wavelength region from DUV to visible light is higher than 80%. The MWCNT/SiO2 composite thin film showed scratch resistance at pencil hardness of 8H. Importantly, the resistivity of the MWCNT/SiO2 composite thin film was maintained at the original level even after heat treatment at 500 °C for 1 h. It was observed that the heat treatment of the composite thin film improved durability against both aqueous solutions involving a strong acid (HCl) and a strong base (NaOH).

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9

Singh, Sarab Preet, and Pankaj Srivastava. "Recent Progress in the Understanding of Si-Nanostructures Formation in a-SiN_x:H Thin Film for Si-Based Optoelectronic Devices." Solid State Phenomena 171 (May 2011): 1–17. http://dx.doi.org/10.4028/www.scientific.net/ssp.171.1.

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There has been a rapidly increasing interest in the synthesis and characterization of Si- nanostructures embedded in a dielectric matrix, as it can lead to energy-efficient and cost-effective Complementary Metal-Oxide-Semiconductor (CMOS)-compatible Si-based light sources for optoelectronic integration. In the present contribution, first an overview of the SiOx as a dielectric matrix and its limitations are discussed. We then review the literature on hydrogenated amorphous silicon nitride (a-SiNx:H) as a dielectric matrix for Si-nanostructures, which have been carried out using silane (SiH4) and ammonia (NH3) as the reactant gases. Our studies demonstrate that the least amount of hydrogen in the as-deposited (ASD) a-SiNx:H films not only allows in-situ formation of Si-nanostructures but also stabilizes silicon nitride (Si3N4) phase. The recent advances made in controlling the shape and size of Si-nanostructures embedded in a-SiNx:H matrix by swift heavy ion (SHI) irradiation are briefly discussed.

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10

LU, WANBING, SHAOGANG GUO, JIANTAO WANG, YUN LI, XINZHAN WANG, GENGXI YU, SHANSHAN FAN, and GUANGSHENG FU. "MICROSTRUCTURAL PROPERTIES OF NC-Si/SiO2 FILMS IN SITU GROWN BY REACTIVE MAGNETRON CO-SPUTTERING." International Journal of Nanoscience 11, no. 06 (December 2012): 1240035. http://dx.doi.org/10.1142/s0219581x12400352.

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Nanocrystalline silicon embedded in silicon oxide (nc- Si/SiO2 ) films have been in situ grown at a low substrate temperature of 300°C by reactive magnetron co-sputtering of Si and SiO2 targets in a mixed Ar/H2 discharge. The influences of H2 flow rate (F H ) on the microstructural properties of the deposited nc- Si/SiO2 films were investigated. The results of XRD and the deposition rate of nc- Si/SiO2 films show that the introduction of H2 contributes to the growth of nc- Si grains in silicon oxide matrix. With further increasing F H , the average size of nc- Si grains increases and the deposition rate of nc- Si/SiO2 films decreases gradually. Fourier transform infrared spectra analyses reveal that introduction of hydrogen contributes to the phase separation of nc- Si and SiO x in the deposited films. Moreover, the Si–O 4-n Si n(n = 0, 1) concentration of the deposited nc- Si/SiO2 films reduces with the increase of F H , while that of Si – O 4-n Si n(n = 2, 3) concentration increases. These results can be explained by that active hydrogen atoms increase the probability of reducing oxygen from precursor in the plasma and prompting oxygen desorption from the growing surface. This low-temperature procedure for preparing nc- Si/SiO2 films opens up the possibility of fabricating the silicon-based thin-film solar cells onto low-cost glass substrates using nc- Si/SiO2 films.

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11

Burlaka, Vladimir, Kai Nörthemann, and Astrid Pundt. "Nb-H Thin Films: On Phase Transformation Kinetics." Defect and Diffusion Forum 371 (February 2017): 160–65. http://dx.doi.org/10.4028/www.scientific.net/ddf.371.160.

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It was recently shown that phases forming in thin films undergo a coherency state change depending on the film thickness. For Nb-H thin films, the coherency state was reported to change at about 38 nm. In this study the impact of the coherency state on the phase transformation kinetics is investigated for Nb films of two different film thicknesses (25 nm and 80 nm), below and above the state change thickness. The phase transformation in thin metal-hydrogen films can be studied by surface topography analyses via scanning tunneling microscopy (STM) because of the strong local lattice expansion of the hydride precipitates. STM on Nb-H reveals fast phase transformation kinetics for the 25 nm Nb-film, and much slower kinetics for the 80 nm film. This is suggested to be related to the change in the coherency between the Nb-matrix and the hydride precipitates.

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12

Loboda, M. J., C. M. Grove, and R. F. Schneider. "Properties of a ‐ SiO x : H Thin Films Deposited from Hydrogen Silsesquioxane Resins." Journal of The Electrochemical Society 145, no. 8 (August 1, 1998): 2861–66. http://dx.doi.org/10.1149/1.1838726.

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13

Zhang, Xiao-Ying, Yue Yang, Zhi-Xuan Zhang, Xin-Peng Geng, Chia-Hsun Hsu, Wan-Yu Wu, Shui-Yang Lien, and Wen-Zhang Zhu. "Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers." Nanomaterials 11, no. 5 (April 29, 2021): 1173. http://dx.doi.org/10.3390/nano11051173.

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In this study, silicon oxide (SiO2) films were deposited by remote plasma atomic layer deposition with Bis(diethylamino)silane (BDEAS) and an oxygen/argon mixture as the precursors. Oxygen plasma powers play a key role in the quality of SiO2 films. Post-annealing was performed in the air at different temperatures for 1 h. The effects of oxygen plasma powers from 1000 W to 3000 W on the properties of the SiO2 thin films were investigated. The experimental results demonstrated that the SiO2 thin film growth per cycle was greatly affected by the O2 plasma power. Atomic force microscope (AFM) and conductive AFM tests show that the surface of the SiO2 thin films, with different O2 plasma powers, is relatively smooth and the films all present favorable insulation properties. The water contact angle (WCA) of the SiO2 thin film deposited at the power of 1500 W is higher than that of other WCAs of SiO2 films deposited at other plasma powers, indicating that it is less hydrophilic. This phenomenon is more likely to be associated with a smaller bonding energy, which is consistent with the result obtained by Fourier transformation infrared spectroscopy. In addition, the influence of post-annealing temperature on the quality of the SiO2 thin films was also investigated. As the annealing temperature increases, the SiO2 thin film becomes denser, leading to a higher refractive index and a lower etch rate.

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14

Marteau, Baptiste, Thibaut Desrues, Quentin Rafhay, Anne Kaminski, and Sébastien Dubois. "Passivating Silicon Tunnel Diode for Perovskite on Silicon Nip Tandem Solar Cells." Energies 16, no. 11 (May 26, 2023): 4346. http://dx.doi.org/10.3390/en16114346.

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Silicon solar cells featuring tunnel oxide passivated contacts (TOPCon) benefit from high efficiencies and low production costs and are on the verge of emerging as the new photovoltaic market mainstream technology. Their association with Perovskite cells in 2-terminal tandem devices enables efficiency breakthroughs while maintaining low fabrication costs. However, it requires the design of a highly specific interface to ensure both optical and electrical continuities between subcells. Here, we evaluated the potential of tunnel diodes as an alternative to ITO thin films, the reference for such applications. The PECV deposition of an nc-Si (n+) layer on top of a boron-doped poly-Si/SiOx passivated contact forms a diode with high doping levels (>2 × 1020 carrier·cm−3) and a sharp junction (<4 nm), thus reaching both ESAKI-like tunnel diode requirements. SIMS measurements of the nc-Si (n+) (deposited at 230 °C) reveal an H-rich layer. Interestingly, subsequent annealing at 400 °C led to a passivation improvement associated with the hydrogenation of the buried poly-Si/SiOx stack. Dark I–V measurements reveal similar characteristics for resistivity samples with or without the nc-Si (n+) layer, and modeling results confirm that highly conductive junctions are obtained. Finally, we produced 9 cm2 nip perovskite on silicon tandem devices, integrating a tunnel diode as the recombination junction between both subcells. Working devices with 18.8% average efficiency were obtained, with only 1.1%abs PCE losses compared with those of references. Thus, tunnel diodes appear to be an efficient, industrially suitable, and indium-free alternative to ITO thin films.

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15

Prado, R. J., D. R. S. Bittencourt, M. H. Tabacniks, M. C. A. Fantini, M. N. P. Carreño, and I. Pereyra. "Distribution of Pores in a-Si1−x C x :H Thin Films." Journal of Applied Crystallography 30, no. 5 (October 1, 1997): 659–63. http://dx.doi.org/10.1107/s0021889897001349.

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The aim of this paper is to compare the optical, compositional and morphological properties of a-Si1 − x C x : H films deposited by plasma enhanced chemical vapour deposition (PECVD) using different mixtures of silane (SiH4) and methane (CH4) under minimum attainable deposition pressure. Films deposited at lower silane flow present a higher carbon content and larger optical gap. The morphology of the films was investigated by small-angle X-ray scattering (SAXS) using two different light sources: (i) conventional tube and (ii) synchrotron radiation. The analysis of the data from both experiments was performed in order to determine a size distribution for spherical pores. The results obtained with both light sources are consistent: the increase in the CH4 concentration implies broader size distribution functions, with an increase of the pore size up to 10 nm. Larger pores are found in films deposited at lower silane flow. For all samples, the density of the smaller pores dominates the size distribution. The relative microvoid density is not proportional to the carbon concentration but presents a maximum for the low carbon content films.

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16

Hattori, Yoshiaki, Takashi Taniguchi, Kenji Watanabe, and Masatoshi Kitamura. "Visualization of a hexagonal boron nitride monolayer on an ultra-thin gold film via reflected light microscopy." Nanotechnology 33, no. 6 (November 15, 2021): 065702. http://dx.doi.org/10.1088/1361-6528/ac3357.

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Abstract Hexagonal boron nitride (h-BN) is an important insulating layered material for two-dimensional heterostructure devices. Among many applications, few-layer h-BN films have been employed as superior tunneling barrier films. However, it is difficult to construct a heterostructure with ultra-thin h-BN owing to the poor visibility of flakes on substrates, especially on a metallic surface substrate. Since reflectance from a metallic surface is generally high, a h-BN film on a metallic surface does not largely influence reflection spectra. In the present study, a thin Au layer with a thickness of ∼10 nm deposited on a Si substrate with a thermally grown SiO2 was used for visualizing h-BN flakes. The thin Au layer possesses conductivity and transparency. Thus, the Au/SiO2/Si structure serves as an electrode and contributes to the visualization of an ultra-thin film according to optical interference. As a demonstration, the wavelength-dependent contrast of exfoliated few-layer h-BN flakes on the substrate was investigated under a quasi-monochromatic light using an optical microscope. A monolayer h-BN film was recognized in the image taken by a standard digital camera using a narrow band-pass filter of 490 nm, providing maximum contrast. Since the contrast increases linearly with the number of layers, the appropriate number of layers is identified from the contrast. Furthermore, the insulating property of a h-BN flake is examined using a conductive atomic force microscope to confirm whether the thin Au layer serves as an electrode. The tunneling current through the h-BN flake is consistent with the number of layers estimated from the contrast.

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17

Viard, J., E. Beche, J. Durand, and R. Berjoan. "SiH bonding environment in PECVD a-SiOxNy:H thin films." Journal of the European Ceramic Society 17, no. 15-16 (January 1997): 2029–32. http://dx.doi.org/10.1016/s0955-2219(97)00083-6.

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18

de O. Graeff, C. F., F. L. Freire, and I. Chambouleyron. "Hydrogen diffusion in RF-sputtered a-Ge: H thin films." Journal of Non-Crystalline Solids 137-138 (January 1991): 41–44. http://dx.doi.org/10.1016/s0022-3093(05)80052-3.

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19

El Khakani, M. A., M. Chaker, A. Jean, S. Boily, J. C. Kieffer, M. E. O'Hern, M. F. Ravet, and F. Rousseaux. "Hardness and Young's modulus of amorphous a-SiC thin films determined by nanoindentation and bulge tests." Journal of Materials Research 9, no. 1 (January 1994): 96–103. http://dx.doi.org/10.1557/jmr.1994.0096.

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Due to its interesting mechanical properties, silicon carbide is an excellent material for many applications. In this paper, we report on the mechanical properties of amorphous hydrogenated or hydrogen-free silicon carbide thin films deposited by using different deposition techniques, namely plasma enhanced chemical vapor deposition (PECVD), laser ablation deposition (LAD), and triode sputtering deposition (TSD). a-SixC1−x: H PECVD, a-SiC LAD, and a-SiC TSD thin films and corresponding free-standing membranes were mechanically investigated by using nanoindentation and bulge techniques, respectively. Hardness (H), Young's modulus (E), and Poisson's ratio (v) of the studied silicon carbide thin films were determined. It is shown that for hydrogenated a-SixC1−x: H PECVD films, both hardness and Young's modulus are dependent on the film composition. The nearly stoichiometric a-SiC: H films present higher H and E values than the Si-rich a-SixC1−x: H films. For hydrogen-free a-SiC films, the hardness and Young's modulus were as high as about 30 GPa and 240 GPa, respectively. Hydrogen-free a-SiC films present both hardness and Young's modulus values higher by about 50% than those of hydrogenated a-SiC: H PECVD films. By using the FTIR absorption spectroscopy, we estimated the Si-C bond densities (NSiC) from the Si-C stretching absorption band (centered around 780 cm−1), and were thus able to correlate the observed mechanical behavior of a-SiC films to their microstructure. We indeed point out a constant-plus-linear variation of the hardness and Young's modulus upon the Si-C bond density, over the NSiC investigated range [(4–18) × 1022 bond · cm−3], regardless of the film composition or the deposition technique.

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20

Zhou, Rui, Zhaoyang Zhao, Juanxia Wu, and Liming Xie. "Chemical Vapor Deposition of IrTe2 Thin Films." Crystals 10, no. 7 (July 3, 2020): 575. http://dx.doi.org/10.3390/cryst10070575.

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Two-dimensional (2D) IrTe2 has a profound charge ordering and superconducting state, which is related to its thickness and doping. Here, we report the chemical vapor deposition (CVD) of IrTe2 films using different Ir precursors on different substrates. The Ir(acac)3 precursor and hexagonal boron nitride (h-BN) substrate is found to yield a higher quality of polycrystalline IrTe2 films. Temperature-dependent Raman spectroscopic characterization has shown the q1/8 phase to HT phase at ~250 K in the as-grown IrTe2 films on h-BN. Electrical measurement has shown the HT phase to q1/5 phase at around 220 K.

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21

Chen, Yuan-Tsung. "Nanoindentation and Adhesion Properties of Ta Thin Films." Journal of Nanomaterials 2013 (2013): 1–7. http://dx.doi.org/10.1155/2013/154179.

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Ta films were sputtered onto a glass substrate with thicknesses from 500 Å to 1500 Å under the following conditions: (a) as-deposited films were maintained at room temperature (RT), (b) films were postannealed atTA=150°C for 1 h, and (c) films were postannealed atTA=250°C for 1 h. X-ray diffraction (XRD) results revealed that the Ta films had a body-centered cubic (BCC) structure. Postannealing conditions and thicker Ta films exhibited a stronger Ta (110) crystallization than as-deposited and thinner films. The nanoindention results revealed that Ta thin films are sensitive to mean grain size, including a valuable hardness (H) and Young’s modulus (E). High nanomechanical properties of as-deposited and thinner films can be investigated by grain refinement, which is consistent with the Hall-Petch effect. The surface energy of as-deposited Ta films was higher than that in postannealing treatments. The adhesion of as-deposited Ta films was stronger than postannealing treatments because of crystalline degree effect. The maximalHandEand the optimal adhesion of an as-deposited 500-Å-thick Ta film were 15.6 GPa, 180 GPa, and 51.56 mJ/mm2, respectively, suggesting that a 500-Å-thick Ta thin film can be used in seed and protective layer applications.

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22

Shin, Dae Yong, and Kyung Nam Kim. "Effective of SiO₂ Addition on the Self-Cleaning and Photocatalytic Properties of TiO₂ Films by Sol-Gel Process." Materials Science Forum 620-622 (April 2009): 679–82. http://dx.doi.org/10.4028/www.scientific.net/msf.620-622.679.

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Thin films of various composition in the system of TiO2•SiO2 have been fabricated by the sol-gel process using Si(OC2H5) and Ti(OC3H7i)4 as precursors. TiO2•SiO2 films were formed on the glass substrate by spin-coating technique and heated at 500°C for 1 h. The relationship between hydrophilicity, photocatalytic properties and self-cleaning property with SiO2 addition and UV light irradiation were investigated. Photocatalytic activity of TiO2•SiO2 films showed decomposition of ~97% of acetaldehyde in 2 h and a water contact angle of ~10°. TiO2•SiO2 films can have more hydrophilic activity and less photocatalytic activity by increasing of SiO2 addition. XPS measurements revealed that the amount of organic compounds adsorbed on the films decreased with the UV light irradiation and SiO2 addition, because of the increased of both OH group contents in films and decomposed organic contaminants of the films surface.

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23

Rüther, R., and J. Livingstone. "An infrared study of SiH cluster formation in a-Si: H thin films." Infrared Physics & Technology 37, no. 4 (June 1996): 533–37. http://dx.doi.org/10.1016/s1350-4495(95)00082-8.

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24

Misra, A., H. Kung, T. E. Mitchell, and M. Nastasi. "Residual stresses in polycrystalline Cu/Cr multilayered thin films." Journal of Materials Research 15, no. 3 (March 2000): 756–63. http://dx.doi.org/10.1557/jmr.2000.0109.

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Residual stresses in sputter-deposited Cu/Cr multilayers and Cu and Cr single-layered polycrystalline thin films were evaluated by the substrate curvature method. The stresses in the multilayers were found to be tensile and to increase in magnitude with increasing layer thickness (h) to a peak value of ∼1 GPa for h = 50 nm. For h > 50 nm, the residual stress decreased with increasing h but remained tensile. The same trends were observed in single-layered Cu and Cr thin films, except that the maximum stress in Cu films is 1 order of magnitude lower than that in Cr. Transmission electron microscopy was used to study the microstructural evolution as a function of layer thickness. The evolution of tensile growth stresses in Cr films is explained by island coalescence and subsequent growth with increasing thickness. Estimates of the Cr film yield strength indicated that, for h ≥ 50 nm, the residual stress may be limited by the yield strength. Substrate curvature measurements on bilayer films of different thicknesses were used to demonstrate that a non-negligible contribution to the total stress in the multilayers arises from the interface stress.

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25

KLAUS, J. W., O. SNEH, A. W. OTT, and S. M. GEORGE. "ATOMIC LAYER DEPOSITION OF SiO2 USING CATALYZED AND UNCATALYZED SELF-LIMITING SURFACE REACTIONS." Surface Review and Letters 06, no. 03n04 (June 1999): 435–48. http://dx.doi.org/10.1142/s0218625x99000433.

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SiO 2 thin films were deposited with atomic layer control using self-limiting surface reactions. The SiO 2 growth was achieved by separating the binary reaction SiCl 4+ 2H 2 O → SiO 2+ 4HCl into two half-reactions. Successive application of the half-reactions in an ABAB… sequence produced atomic-layer-controlled SiO 2 deposition. SiO 2 films were grown at temperatures of 600–800 K, with SiCl 4 and H 2 O reactant exposures of ~109 L ( 1 L = 10-6 Torr s). Employing pyridine ( C 5 H 5 N ) as a catalyst, the SiO 2 films could be deposited at much lower temperatures and reactant exposures. The pyridine catalyst lowered the required SiO 2 deposition temperature from 600 K to 300 K and reduced the reactant exposure required for complete reactions from ~109 L to ~ 104 L. In addition, the SiO 2 growth rates increased from 0.75 Å per AB cycle at 800 K to 2.1 Aring; per AB cycle at 300 K. The deposited films were stoichiometric SiO 2 and were extremely flat, with a roughness nearly identical to the initial substrate surface. The films also displayed dielectric breakdown strengths similar to thermally deposited SiO 2 films. The ability to deposit conformal SiO 2 thin films with atomic layer control over a wide range of temperatures should find numerous applications in thin film device fabrication.

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26

Lee, Hean Ju, Kyoung Suk Oh, and Chi Kyu Choi. "The mechanical properties of the SiOC(H) composite thin films with a low dielectric constant." Surface and Coatings Technology 171, no. 1-3 (July 2003): 296–301. http://dx.doi.org/10.1016/s0257-8972(03)00289-5.

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27

HASANAIN, S. K., and UZMA KHALIQUE. "FLUX DYNAMICS IN YBCO THIN FILMS." Modern Physics Letters B 14, no. 27n28 (December 10, 2000): 949–59. http://dx.doi.org/10.1142/s0217984900001099.

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Magnetic measurements are reported on YBCO thin films (d<500 nm ) in the perpendicular geometry, H‖c. By analyzing the sweep rate dependence of the magnetization for temperatures 35 ≤ T ≤ 77 K and H≤10 kOe , we find that the moment has a power law dependence on the sweep rate. This dependence is indicative of power law E(J) characteristics for these thin films and from this a logarithmic current dependence of the activation potential U(J) is inferred. We find that our magnetic relaxation measurements are also consistent with the logarithmic U(J) dependence obtained from the sweep rate measurements. Activation barriers for flux creep are determined for various temperatures and their field dependence is discussed.

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28

Wang, Xiao-Dong, K. W. Hipps, J. T. Dickinso, and Ursula Mazur. "Amorphous or nanocrystalline AlN thin films formed from AlN: H." Journal of Materials Research 9, no. 6 (June 1994): 1449–55. http://dx.doi.org/10.1557/jmr.1994.1449.

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This work describes the formation of stoichiometric AlN films by single ion-beam sputtering of Al, using an ionized N2 (75%) + H2 (25%) mixture, onto substrates heated to 200 °C or above. The role of substrate temperature on film composition and properties is followed in the substrate temperature range between ambient and 250 °C. Infrared spectra of freshly prepared and 2 month old (aged in air) films demonstrate that substrate heating significantly affects the chemical nature of the resulting films. SEM and STM data, combined with IR and UV-visible spectral results, indicate that films formed at a substrate temperature of ≥200 °C are very smooth and highly resistant to attack by atmospheric gases. X-ray diffraction data show no diffraction peaks, indicating that the film is either amorphous or crystalline on a scale of less than 4 nm.

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29

Mota-Santiago, P., A. Nadzri, F. Kremer, T. Bierschenk, C. E. Canto, M. D. Rodriguez, C. Notthoff, S. Mudie, and P. Kluth. "Characterisation of silicon oxynitride thin films and their response to swift heavy-ion irradiation." Journal of Physics D: Applied Physics 55, no. 14 (January 10, 2022): 145301. http://dx.doi.org/10.1088/1361-6463/ac45b1.

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Abstract Silicon oxynitrides (a-SiO x N y ) are materials whose composition ranges between two binary materials: a-SiO2 and a-Si3N4. In this work, we present a systematic study of the fine structure of the damaged regions produced by swift heavy-ions (SHIs), or ‘ion-tracks’ and quantify the density variation profiles with respect to composition. Thin films were deposited by plasma-enhanced chemical vapor deposition (CVD), where thickness, density, stoichiometry and bond configuration were initially determined. The fine structure and radial size of the ion tracks was determined using small angle x-ray scattering. The tracks exhibit a core–shell cylindrical geometry, with an under-dense core surrounded by an over-dense shell with a smooth transition between the two regions. We observed two trends with composition: a constant increasing ion track radius is observed when the O/Si ratio is below one ( 0 ≤ x ≤ 1 ) . And saturation of the radial dimensions above this value, being similar to a-SiO2. The IR spectra allowed to quantify the bond configuration and its evolution with fluence. After irradiation, the energy deposited by the SHI irradiation leads to a preferential damage of Si–N bonds. IR spectroscopy also showed the formation of new Si–H bonds with increasing fluences and resulting in a rather complex ion-induced structural modification of the a-SiO x N y network.

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30

Terekhov, Vladimir A., Evgeny I. Terukov, Yury K. Undalov, Konstantin A. Barkov, Igor E. Zanin, Oleg V. Serbin, and Irina N. Trapeznikova. "Structural Rearrangement of a-SiOx:H Films with Pulse Photon Annealing." Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases 22, no. 4 (December 15, 2020): 489–95. http://dx.doi.org/10.17308/kcmf.2020.22/3119.

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Amorphous SiOx films with silicon nanoclusters are a new interesting material from the standpoint of the physics, technology, and possible practical applications, since such films can exhibit photoluminescence due to size quantization. Moreover, the optical properties of these structures can be controlled by varying the size and the content of silicon nanoclusters in the SiOx film, as well as by transforming nanoclusters into nanocrystals by means of high-temperature annealing. However, during the annealing of nonstoichiometric silicon oxide, significant changes can occur in the phase composition and the structure of the films. The results of investigations on the crystallization of silicon nanoclusters in a SiOx matrix have shownthat, even a very fast method of annealing using PPA leads to the formation of large silicon crystallites. This also causes the crystallization of at least a part of the oxide phase in the form of silicon hydroxide H6O7Si2. Moreover, in films with an initial content of pure silicon nanoclusters ≤ 50%, during annealing a part of the silicon is spent on the formation of oxide, and part of it is spent on the formation of silicon crystals. While in a film with an initial concentration of silicon nanoclusters ≥ 53%, on the contrary, upon annealing, there occurs a partial transition of silicon from the oxide phase to the growth ofSi crystals Reference 1. Undalov Y. K., Terukov E. I., Silicon nanoclustersncl-Si in a hydrogenated amorphous silicon suboxidematrix a-SiOx:H (0 < x < 2). Semiconductors. 2015;49(7):867- 878. DOI: https://doi.org/10.1134/S10637826150702222. Kim K. H., Johnson E. V., Kazanskii A. G.,Khenkin M. V., Roca P. Unravelling a simple methodfor the low temperature synthesis of siliconnanocrystals and monolithic nanocrystalline thinfilms. Scientific Reports. 2017;7(1) DOI: https://doi.org/10.1038/srep405533. Undalov Y. K., Terukov E. I., Trapeznikova I. N.Formation of ncl-Si in the amorphous matrix a-SiOx-:H located near the anode and on the cathode, usinga time-modulated DC plasma with the (SiH4–Ar–O2)gas phase (Co2 = 21.5 mol%). Semiconductors.2019;53(11): 1514–1523. DOI: https://doi.org/10.1134/S10637826191102284. Terekhov V. A., Terukov E. I., Undalov Y. K.,Parinova E. V., Spirin D. E., Seredin P. V., Minakov D. A.,Domashevskaya E. P. Composition and optical propertiesof amorphous a-SiOx:H films with silicon nanoclusters.Semiconductors. 2016;50(2): 212–216. DOI:https://doi.org/10.1134/S10637826160202515. Terekhov V. A., Turishchev S. Y., Kashkarov V. M.,Domashevskaya E. P., Mikhailov A. N., Tetel’baum D. I.Silicon nanocrystals in SiO2 matrix obtained by ionimplantation under cyclic dose accumulation. PhysicaE: Low-dimensional Systems and Nanostructures.2007;38(1-2): 16–20. DOI: https://doi.org/10.1016/j.physe.2006.12.0306. Terekhov V. A., Turishchev S. Y., Pankov K. N.,Zanin I. E., Domashevskaya E. P., Tetelbaum D. I.,Mikhailov A. N., Belov A. I., Nikolichev D. E., Zubkov S. Y.XANES, USXES and XPS investigations of electronenergy and atomic structure peculiarities of the siliconsuboxide thin film surface layers containing Si nanocrystals.Surface and Interface Analysis. 2010;42(6-7):891–896. DOI: https://doi.org/10.1002/sia.33387. Terekhov V. A., Turishchev S. Y., Pankov K. N.,Zanin I. E., Domashevskaya E. P., Tetelbaum, MikhailovA. N., Belov A. I., Nikolichev D. E. Synchrotron investigationsof electronic and atomic-structure peculiaritiesfor silicon-oxide films’ surface layers containingsilicon nanocrystals. Journal of Surface Investigation.X-ray, Synchrotron and Neutron Techniques. 2011;5(5):958–967. DOI: https://doi.org/10.1134/S102745101110020X8. Sato K., Izumi T., Iwase M., Show Y., Morisaki H.,Yaguchi T., Kamino T. Nucleation and growth of nanocrystallinesilicon studied by TEM, XPS and ESR.Applied Surface Science. 2003;216 (1-4): 376–381. DOI:https://doi.org/10.1016/S0169-4332(03)00445-89. Ledoux G., Gong J., Huisken F., Guillois O., ReynaudC. Photoluminescence of size-separated siliconnanocrystals: Confirmation of quantum confinement.Applied Physics Letters. 2002;80(25): 4834–4836. DOI:https://doi.org/10.1063/1.148530210. Patrone L., Nelson D., Safarov V. I., Sentis M.,Marine W., Giorgio S. Photoluminescence of siliconnanoclusters with reduced size dispersion producedby laser ablation. Journal of Applied Physics. 2000;87(8):3829–3837. DOI: https://doi.org/10.1063/1.37242111. Takeoka S., Fujii M., Hayashi S. Size-dependentphotoluminescence from surface-oxidized Si nanocrystalsin a weak confinement regime. Physical ReviewB. 2000;62(24): 16820–16825. DOI: https://doi.org/10.1103/PhysRevB.62.1682012. Ievlev V. M. Activation of solid-phase processesby radiation of gas-discharge lamps, Russian ChemicalReviews. 2013;82(9): 815–834. DOI: https://doi.org/10.1070/rc2013v082n09abeh00435713. Zimkina T. M., Fomichev V. A. Ultrasoft X-Rayspectroscopy. Leningrad: Leningrad State UniversityPubl.; 1971. 132 p.14. Wiech G., Feldhütter H. O., Šimůnek A. Electronicstructure of amorphous SiOx:H alloy filmsstudied by X-ray emission spectroscopy: Si K, Si L, andO K emission bands. Physical Review B. 1993;47(12):6981–6989. DOI: https://doi.org/10.1103/Phys-RevB.47.698115. Domashevskaya E. P., Peshkov Y. A., TerekhovV. A., Yurakov Y. A., Barkov K. A., Phase compositionof the buried silicon interlayers in the amorph o u s m u l t i l a y e r n a n o s t r u c t u r e s[(Co45Fe45Zr10)/a-Si:H]41 and [(Co45Fe45Zr10)35(Al2O3)65/a-Si:H]41. Surface and Interface Analysis.2018;50(12-13): 1265–1270. DOI: https://doi.org/10.1002/sia.651516. Terekhov V. A., Kashkarov V. M., ManukovskiiE. Yu., Schukarev A. V., Domashevskaya E. P.Determination of the phase composition of surfacelayers of porous silicon by ultrasoft X-ray spectroscopyand X-ray photoelectron spectroscopy techniques.Journal of Electron Spectroscopy and Related Phenomena.2001;114–116: 895–900. DOI: https://doi.org/10.1016/S0368-2048(00)00393-517. JCPDS-International Centre for DiffractionData ICDD PDF-2, (n.d.) card No 01-077-2110.18. JCPDS-International Centre for DiffractionData ICDD PDF-2, (n.d.) card No 00-050-0438.

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31

Bayley, P. A., and J. M. Marshall. "Transient photoconductivity in a-Si1−x C x :H thin films." Philosophical Magazine B 73, no. 3 (March 1996): 429–44. http://dx.doi.org/10.1080/13642819608239127.

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32

Guo, Zi-Hao, Na Ai, Connor Ryan McBroom, Tianyu Yuan, Yen-Hao Lin, Michael Roders, Congzhi Zhu, Alexander L. Ayzner, Jian Pei, and Lei Fang. "A side-chain engineering approach to solvent-resistant semiconducting polymer thin films." Polymer Chemistry 7, no. 3 (2016): 648–55. http://dx.doi.org/10.1039/c5py01669j.

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33

Song, Lin, Volker Körstgens, David Magerl, Bo Su, Thomas Fröschl, Nicola Hüsing, Sigrid Bernstorff, and Peter Müller-Buschbaum. "Low-Temperature Fabrication of Mesoporous Titania Thin Films." MRS Advances 2, no. 43 (2017): 2315–25. http://dx.doi.org/10.1557/adv.2017.406.

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ABSTRACTMesoporous titania films are prepared via the polymer-template assisted sol-gel synthesis at low temperatures, using the titania precursor ethylene glycol-modified titanate (EGMT) and the diblock copolymer polystyrene-block-polyethyleneoxide (PS-b-PEO). UV-irradiation is chosen as a low temperature technique to remove the polymer template and thereby to obtain titania sponge-like nanostructures at processing temperatures below 100 °C. After different UV irradiation times, ranging for 0 h to 24 h, the surface and inner morphologies of the titania films are studied with scanning electron microscopy (SEM) and grazing incidence small-angle x-ray scattering (GISAXS), respectively. The evolution of the band gap energies is investigated using ultraviolet/visible (UV/Vis) spectroscopy. The findings reveal that 12 h UV-treatment is sufficient to remove the polymer template from the titania/PS-b-PEO composite films with a thickness of 80 nm, and the determined bad gap energies indicate an incomplete crystallization of the titania nanostructures.

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34

Hu, Chih-Wei, Yasusei Yamada, and Kazuki Yoshimura. "Fabrication of nickel oxyhydroxide/palladium (NiOOH/Pd) thin films for gasochromic application." Journal of Materials Chemistry C 4, no. 23 (2016): 5390–97. http://dx.doi.org/10.1039/c6tc01541g.

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NiOOH/Pd thin films were prepared by a chemical bath deposition (CBD) method, electrochemical CV treatment and sputtering. The novel gasochromic phenomenon of NiOOH/Pd thin films is presented in (a) UV-vis spectra before and after exposure to H₂, and (b) the images of thin films before (left) and after (right) exposure to H₂ are shown.

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35

Yang, Chang Sil, Heon Ju Lee, and Chi Kyu Choi. "Formation and Characteristics of the Low Dielectric Carbon Doped Silicon Oxide Thin Film Deposited by MTMS/O₂ – ICPCVD." Solid State Phenomena 107 (October 2005): 103–6. http://dx.doi.org/10.4028/www.scientific.net/ssp.107.103.

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Carbon doped silicon oxide (SiOC(-H)) films with low dielectric constant were deposited on a p-type Si(100) substrate using inductively coupled plasma chemical vapor deposition with a methyltrimethoxysilane (MTMS : CH3Si(OCH3)3) precursor and oxygen gases. The dielectric constant of the SiOC(-H) composite film depends on the relative carbon concentration and the content of the ring link mode in SiOC(-H) bonding structure. The elastic modulus and the dielectric constant decreased by the annealing process. The lowest dielectric constant of an annealed film at 400 °C was about 2.25, which was deposited with [MTMS/(MTMS+O2)]×100 flow ratio of 100%.

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36

Mu, Wen Ning, Shuang Zhi Shi, and Xiu Yu Yang. "Preparation of TiO₂ Nanometer Thin Film Deposited on Organic Templates by a Layer-by-Layer Self-Assembly Method." Advanced Materials Research 391-392 (December 2011): 432–36. http://dx.doi.org/10.4028/www.scientific.net/amr.391-392.432.

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Thin organic layer-by-layer self-assembly films with negatively charged surface were prepared, which used as templates for the deposition of TiO2on Si substrate by hydrolysis of titanate solution in acid environment. The as-deposited thin films were fully amorphous from the result of XRD, also were homogeneous and continuous produced at 80 °C for 2 h as presented in SEM images. The thickness of thin films grew with deposition time gradually and reached 300 nm after 12 h immersion.

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37

Rosaiah, P., and O. M. Hussain. "Microstructural and Electrochemical Properties of rf-Sputtered LiFeO2 Thin Films." Journal of Nanoscience 2014 (March 13, 2014): 1–6. http://dx.doi.org/10.1155/2014/173845.

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Lithium iron oxide (LiFeO2) thin films have been deposited by rf-magnetron sputtering technique and microstructural and electrochemical properties were studied. The films deposited at a substrate temperature 250°C with subsequent post annealing at 500°C for 4 h exhibited cubic rock-salt structure with Fm3m space group. The films exhibited well-defined oxidation and reduction peaks suggesting complete reversibility upon cycling. The as-deposited films exhibited an initial discharge capacity 15 μAh/cm2·μm, whereas the films post annealed at 500°C for 4 h in controlled oxygen environment exhibited 31 μAh/cm2·μm.

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38

Hellgren, Niklas, Nian Lin, Esteban Broitman, Virginie Serin, Stefano E. Grillo, Ray Twesten, Ivan Petrov, Christian Colliex, Lars Hultman, and Jan-Eric Sundgren. "Thermal stability of carbon nitride thin films." Journal of Materials Research 16, no. 11 (November 2001): 3188–201. http://dx.doi.org/10.1557/jmr.2001.0440.

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The thermal stability of carbon nitride films, deposited by reactive direct current magnetron sputtering in N2 discharge, was studied for postdeposition annealing temperatures TA up to 1000 °C. Films were grown at temperatures of 100 °C (amorphous structure) and 350 and 550 °C (fullerenelike structure) and were analyzed with respect to thickness, composition, microstructure, bonding structure, and mechanical properties as a function of TA and annealing time. All properties investigated were found to be stable for annealing up to 300 °C for long times (>48 h). For higher TA, nitrogen is lost from the films and graphitization takes place. At TA = 500 °C the graphitization process takes up to 48 h while at TA = 900 °C it takes less than 2 min. A comparison on the evolution of x-ray photoelectron spectroscopy, electron energy loss spectroscopy and Raman spectra during annealing shows that for TA > 800 °C, preferentially pyridinelike N and –C≡N is lost from the films, mainly in the form of molecular N2 and C2N2, while N substituted in graphite is preserved the longest in the structure. Films deposited at the higher temperature exhibit better thermal stability, but annealing at temperatures a few hundred degrees Celsius above the deposition temperature for long times is always detrimental for the mechanical properties of the films.

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39

Lai, Lu-Lu, and Jin-Ming Wu. "A facile solution approach to W,N co-doped TiO2 nanobelt thin films with high photocatalytic activity." Journal of Materials Chemistry A 3, no. 31 (2015): 15863–68. http://dx.doi.org/10.1039/c5ta03918e.

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W,N co-doped anatase TiO₂ nanobelt films were synthesized by direct oxidation of metallic Ti substrates with H₂O₂ solutions containing H₂WO₄ and C₃H₆N₆ at 80 °C, followed by a subsequent calcination. The photocatalytic activity of the W,N co-doped anatase TiO₂ nanobelt films was nearly three times that of undoped alkali-hydrothermal synthesized anatase TiO₂ nanobelt films, under UV and visible light illumination.

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40

Heita Shafudah, Natangue, Hiroki Nagai, Yutaka Suwazono, Ryuhei Ozawa, Yukihiro Kudoh, Taiju Takahashi, Takeyoshi Onuma, and Mitsunobu Sato. "Hydrophilic Titania Thin Films from a Molecular Precursor Film Formed via Electrospray Deposition on a Quartz Glass Substrate Precoated with Carbon Nanotubes." Coatings 10, no. 11 (October 29, 2020): 1050. http://dx.doi.org/10.3390/coatings10111050.

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Titania precursor films were electrosprayed on a quartz glass substrate, which was pre-modified with an ultra-thin film obtained by spin-coating a single-walled carbon nanotube (SWCNT) dispersed solution. The X-ray diffraction patterns of the thin films obtained by heat-treating the precursor films at 500 °C in air for 1 h indicated that the formed crystals were anatase. A new route to fabricate transparent thin films on the insulating substrate via electrospray deposition (ESD) was thus attained. The photoluminescence spectrum of the thin film showed a peak at 2.23 eV, assignable to the self-trapped exciton of anatase. The Raman spectrum of the thin film demonstrated that heat treatment is useful for removing SWCNTs. The thin film showed a water contact angle of 14 ± 2° even after being kept under dark conditions for 1 h, indicating a high level of hydrophilicity. Additionally, the thin film had a super-hydrophilic surface with a water contact angle of 1 ± 1° after ultraviolet light irradiation with an intensity of 4.5 mW cm−2 at 365 nm for 1 h. The importance of Ti3+ ions in the co-present amorphous phase, which was dominantly formed via the ESD process, for hydrophilicity was also clarified by means of X-ray photoelectron spectroscopy.

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41

Ramana, K. Venkata, M. Chandra Shekar, and V. Madhusudhana Reddy. "Characterization of Blended Polymer Electrolyte Thin Films Based on PVDF + PEG Doped with Nano SiO2." Oriental Journal Of Chemistry 38, no. 4 (August 31, 2022): 924–28. http://dx.doi.org/10.13005/ojc/380412.

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Solution Casting Technique (SCT) is used to prepare the films of poly vinylidene difluoride (PVDF) + poly ethylene glycol (PEG) + nano silicon dioxide (SiO2.). Modifications in structure, thermal stability and energy band gap values of all prepared thin films have been studied using XRD, SEM, DSC and UV-Vis. The disappearance of a small dip at higher concentrations of DSC plots of nano SiO2 in PVDF+PEG indicates that the decrease in the crystallinity which also supported by XRD results. From the SEM results it is observed that, at 10 wt.% of nano SiO2 of concentration amorphous nature is more which leads increase in thermal stability of the material. FTIR results show strong growth in the CF2 stretching with increasing concentratration of nano SiO2 in PVDF+PEG and also the intensity of the aliphatic C-H scattering vibrational bands are observed in spectra of PVDF+PEG and PVDF+PEG+nano SiO2. The direct band gap values of PVDF+PEG+nano SiO2 polymer electrolyte indicates the influence of nano SiO2 on PVDF+PEG for better conducting properties.

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42

Miceli, P. F., H. Zabel, J. A. Dura, and C. P. Flynn. "Anomalous lattice expansion of metal-hydrogen thin films." Journal of Materials Research 6, no. 5 (May 1991): 964–68. http://dx.doi.org/10.1557/jmr.1991.0964.

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We report x-ray diffraction experiments investigating the lattice expansion due to hydrogen in Nb/Ta superlattices and thin Nb films. For low hydrogen concentrations (cH < 0.09 H/metal), the lattice expands only normal to the plane of the film due to the epitaxial constraints imposed by the substrate. At higher concentrations, corresponding to strains on the order of the critical strains expected for the formation of misfit dislocations, we find a structural instability which leads to the formation of two metal-H phases, one of which has a lattice expansion in the plane of the film. These results differ significantly from the expected phase diagram and properties of the bulk metal-H systems.

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43

Azmi, Fahmida, Brahim Ahammou, Paramita Bhattacharyya, and Peter Mascher. "Optical and Mechanical Properties of Europium-Doped Silicon Oxynitride Thin Films." ECS Meeting Abstracts MA2022-01, no. 20 (July 7, 2022): 1093. http://dx.doi.org/10.1149/ma2022-01201093mtgabs.

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Light emission from silicon-based systems has gained significant interest over the past few decades with the vision of developing an optoelectronic platform that can be integrated with the existing metal-oxide-semiconductor (MOS) technology [1]. Rare earth doping of silicon-based materials is a promising approach to fabricating efficient light emitting devices because of their excellent luminescence properties and their chemical stability [2]. Europium (Eu) ions are attractive dopants for silicon photonic applications due to their intense emission in the visible spectral region. The efficiency of such photonic devices can be influenced by the mechanical properties of the Eu-doped films. Thus, the integration of these films in photonic devices requires an understanding of their mechanical properties as well. In this work, we discuss the relationship between the photoluminescence (PL) behavior and the elasticity and hardness of Eu doped silicon oxynitride (SiON) thin films. We have fabricated thin films using an electron cyclotron resonance plasma-enhanced chemical vapor deposition system with integrated magnetron sputtering system [3] on p-type 3” Si (100) substrates. Silane (diluted in 90% argon) and nitrogen (diluted in 90% argon) were used as precursor gases, while a 99.9% pure Eu sputtering target was used as a sputtering source. Different sets of samples were fabricated by changing the sputtering power and argon flow rate to understand the effect of deposition parameters on the dopant concentration and the optical and mechanical properties. Post-deposition annealing in nitrogen and a mixture of nitrogen with hydrogen (5%) were performed over a wide range of temperatures from 600° to 1100° C. The effect of hydrogen passivation was studied as well. The atomic concentration of the constituents was identified by Rutherford backscattering spectrometry. Optical properties were investigated by variable angle spectroscopic ellipsometry (VASE) analysis. The PL spectra were obtained at room temperature with a laser diode excitation source, operating at a wavelength of 375nm. Finally, we performed nanoindentation measurements to understand the deformation behavior of SiON films with the incorporation of Eu. The indentation hardness and Young’s modulus of the films were investigated, respectively, for different Eu concentrations and different deposition parameters. Reference [1] A. Moadhen, H. Elhouichet, M. Oueslati, and M. Férid, “Photoluminescence properties of europium-doped porous silicon nanocomposites,” J. Lumin., vol. 99, no. 1, pp. 13–17, 2002, doi: 10.1016/S0022-2313(02)00322-8. [2] Z. Lin R. Huang, H. Wang, Y. Wang, Y. Zhang, Y. Gao, J. Song, C. Song, H. Li, “Dense nanosized europium silicate clusters induced light emission enhancement in Eu-doped silicon oxycarbide films,” J. Alloys Compd., vol. 694, pp. 946–951, 2017, doi: 10.1016/j.jallcom.2016.10.132. [3] J. W. Miller, Z. Khatami, J. Wojcik, J. D. B. Bradley, and P. Mascher, “Integrated ECR-PECVD and magnetron sputtering system for rare-earth-doped Si-based materials,” Surf. Coatings Technol., vol. 336, pp. 99–105, 2018, doi: 10.1016/j.surfcoat.2017.08.051.

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Sarbu, Alexandru, Laure Biniek, Jean-Michel Guenet, Philippe J. Mésini, and Martin Brinkmann. "Reversible J- to H-aggregate transformation in thin films of a perylenebisimide organogelator." Journal of Materials Chemistry C 3, no. 6 (2015): 1235–42. http://dx.doi.org/10.1039/c4tc02444c.

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Анотація:

A perylene bisimide organogelator is shown to behave as a reversible stimuli responsive material: thermal annealing and contact with organic non solvents allow to switch back and forth between a green J-type (Form I) and a red H-type (Form II) aggregate in thin films and powders of a N,N′-substituted H-bonding perylenebisimide (PBI-C10).

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45

Yamauchi, H., R. J. White, M. Ayukawa, T. C. Murray, and J. W. Robinson. "The structure of thin films sputter deposited from a Ba2 Si2TiO8 ceramic target." Journal of Materials Research 3, no. 1 (February 1988): 105–11. http://dx.doi.org/10.1557/jmr.1988.0105.

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Thin films were sputter deposited from a Fresnoite (Ba2Si2TiO8) ceramic target at substrate temperatures lower than 175°C. The as-deposited thin films were near amorphous with a void network morphology. In spite of the fact that the film compositions were shifted from stoichiometry, x-ray diffraction studies showed that the films crystallized to form randomly oriented Fresnoite grains. The crystallization kinetics were quite sluggish and the resultant activation energy for the crystallization process was 370 ± 30 kJ/mol. Even after annealing for 10 h at 750°C an appreciable amount of amorphous material remained in the thin films. The short-range order in this amorphous material was changed from that of the as-deposited thin films. The overall devitrification kinetics of amorphous Fresnoite thin films at a fixed temperature were represented theoretically by an equation of Tool's type.

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46

Liu, Dage, Hongxi Zhang, Zhong Wang, and Liancheng Zhao. "Preparation and Characterization of Pb(Zr0.52Ti0.48)O3 Powders and Thin Films by a Sol-gel Route." Journal of Materials Research 15, no. 6 (June 2000): 1336–41. http://dx.doi.org/10.1557/jmr.2000.0194.

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Lead zirconate titanate [Pb(ZrxTi1−x)O3 (PZT)] powders and ferroelectric thin films with a composition near the morphotropic phase boundary [Pb(Zr0.52Ti0.48)O3] were prepared by a modified sol-gel process using zirconium oxynitrate-2-hydrate as the zirconium source and ethylene glycol as solvent. The precursor solution was prepared from lead acetate-3-hydrate, tetrabutyl titanate, and zirconium oxynitrate-2-hydrate. Perovskite PZT powders were obtained after sintering at 450 °C for 2 h. Films rapid-thermally annealed at 650 °C for 1 min formed well-crystallized perovskite.Microstructures of these films indicated the presence of nano-sized grains (∼50 nm). The remnant polarization was 28.5 μC/cm2, and the coercive field was 39.8 kV/cm. Ferroelectric polarization fatigue test of In/PZT/Pt/Ti/SiO2/Si showed a high fatigue resistance up to 3 × 1010 cycles before Pr decreased by 50%.

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47

Zhou, Weikun, Wenqiao Han, Yihao Yang, Liang Shu, Qinggui Luo, Yanjiang Ji, Cai Jin, et al. "Synthesis of freestanding perovskite oxide thin films by using brownmillerite SrCoO_2.5 as a sacrificial layer." Applied Physics Letters 122, no. 6 (February 6, 2023): 062901. http://dx.doi.org/10.1063/5.0131056.

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Freestanding perovskite thin films display many unprecedented properties and exhibit the potential to be easily integrated on other non-oxide substrates or layers. In this work, we demonstrated a pathway to synthesis freestanding perovskite oxide thin films by using brownmillerite SrCoO2.5 as a sacrificial layer. Four representative freestanding perovskite oxide films, e.g., ferromagnetic SrRuO3, La0.7Sr0.3MnO3, dielectric SrTiO3, and ferroelectric Pb(Zr0.2Ti0.8)O3, were produced by etching SrCoO2.5 in Fe(NO3)3 weak acidic solution at room temperature. A 80 nm SrRuO3, which served as an H+ conduction channel, was deposited as a bottom layer of SrCoO2.5 to trigger a quick dissolution for the exfoliation of SrTiO3 and Pb(Zr0.2Ti0.8)O3 poor H+ conductor. Their crystal structure and physical properties were well retained in transferred films. Our work demonstrated the wide applicability of SrCoO2.5 as a sacrificial layer on the synthesis of freestanding perovskite oxide thin films.

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48

Foschini, Cesar, Bruno Hangai, Paulo Ortega, Elson Longo, Mário Cilense, and Alexandre Simões. "Evidence of ferroelectric behaviour in CaCu3Ti4O12 thin films deposited by RF-sputtering." Processing and Application of Ceramics 13, no. 3 (2019): 219–28. http://dx.doi.org/10.2298/pac1903219f.

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The origin of abnormal ferroelectric and unusual piezoelectricity in the polycrystalline CaCu3Ti4O12 (CCTO) thin films deposited by RF-sputtering on Pt/Ti/SiO2/Si (100) substrates was explored. The CCTO thin films, deposited at room temperature followed by annealing at 600?C for 2 h in a conventional furnace, have a cubic structure with lattice parameter a = 7.379 ? 0.001 ? and without any secondary phases. No polarization loss up to 1010 switching cycles, with a switched polarization ?P of 30 ?C/cm2 measured at 400 kV/cm was evidenced. The piezoelectric coefficient investigated by piezoresponse force microscopy (PFM) was approximately 9.0 pm/V. This may be the very first example of exploring the origin of ferroelectric behaviour for a material that possesses space charge polarization with highly resistive grain boundaries in the polycrystalline state.

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49

Mohammed Al-Ansari, Ramiz A. "The effect of annealing temperatures on the optical parameters of NiO0.99Cu0.01 thin films." Iraqi Journal of Physics (IJP) 14, no. 29 (February 3, 2019): 73–81. http://dx.doi.org/10.30723/ijp.v14i29.223.

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NiO0.99Cu0.01 films have been deposited using thermal evaporationtechnique on glass substrates under vacuum 10-5mbar. The thicknessof the films was 220nm. The as -deposited films were annealed todifferent annealing temperatures (373, 423, and 473) K undervacuum 10-3mbar for 1 h. The structural properties of the films wereexamined using X-ray diffraction (XRD). The results show that noclear diffraction peaks in the range 2θ= (20-50)o for the as depositedfilms. On the other hand, by annealing the films to 423K in vacuumfor 1 h, a weak reflection peak attributable to cubic NiO wasdetected. On heating the films at 473K for 1 h, this peak wasobserved to be stronger. The most intense peak is at 2θ = 37.12o withthe preferential orientation of the films being (111) plane. The opticalproperties of the films have been studied. The effect of annealingtemperature on the optical parameters of NiO0.99Cu0.01 such astransmittance, reflectance, absorption coefficient, refractive index,extinction coefficient, and real and imaginary parts of dielectricconstant has been reported.

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50

Lemonds, A. M., K. Kershen, J. Bennett, K. Pfeifer, Y.-M. Sun, J. M. White, and J. G. Ekerdt. "Adhesion of Cu and low-k Dielectric Thin Films with Tungsten Carbide." Journal of Materials Research 17, no. 6 (June 2002): 1320–28. http://dx.doi.org/10.1557/jmr.2002.0197.

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The adhesion of copper and various dielectric materials to tungsten carbide was studied using interfacial critical debond energies obtained by the four-point flexure method. Tungsten carbide (W2C), films 33.3 nm thick, were vapor deposited onto SiO2, spin-on carbon polymer resin (CPR), chemically vapor deposited organosilicate glass (OSG), and spin-on siloxane-organic polymer (SOP) surfaces using direct-current magnetron sputtering of a W metal target and a methane substrate plasma. Thick copper films (42.5 nm) were vapor deposited onto W2C. Some interfaces were modified by an Ar plasma, 1-nm W deposition, or O2 plasma treatment prior to Cu deposition. A W2C film deposited onto a CPR substrate was annealed for 2 h at 673 K in a 99% N2/1% H2gas mixture. For the untreated dielectric surfaces, the debond energy ranged from 39.9 to 3.95 J/m2. In order of descending adhesion energy, the substrates are ranked CPR, SiO2, SOP, and OSG. Ar plasma treatment of the SiO2 surface increased the debond energy from 20.3 to 41.3 J/m2. The Cu/W2C debond energy was 20.4 J/m2. Ar plasma or 1-nm W deposition treatment to the carbide surface moved the point of delamination from the Cu/W2C interface to the W2C/CPR interface for a Cu/W2C/CPR multilayer structure.

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