Добірка наукової літератури з теми "A-SiOx:H Thin Films"
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Статті в журналах з теми "A-SiOx:H Thin Films"
Alfonsetti, R., L. Lozzi, M. Passacantando, P. Picozzi, and S. Santucci. "Determination of stoichiometry of SiOx thin films using an Auger parameter." Thin Solid Films 213, no. 2 (June 1992): 158–59. http://dx.doi.org/10.1016/0040-6090(92)90276-h.
Повний текст джерелаZamchiy, Alexandr, Evgeniy Baranov, Sergey Khmel, and Marat Sharafutdinov. "Effect of annealing time on aluminum-induced crystallization of silicon suboxide thin films." EPJ Web of Conferences 196 (2019): 00039. http://dx.doi.org/10.1051/epjconf/201919600039.
Повний текст джерелаNagatomi, Y., S. Yoshidomi, M. Hasumi, T. Sameshima, and A. Kohno. "Formation of Aluminum Oxide Films on Silicon Surface by Aluminum Evaporation in Oxygen Gas Atmosphere." MRS Proceedings 1426 (2012): 421–26. http://dx.doi.org/10.1557/opl.2012.868.
Повний текст джерелаGlesener, J. W., J. M. Anthony, and A. Cunningham. "Photoluminescence investigation of a-C: H thin films." Diamond and Related Materials 2, no. 5-7 (April 1993): 670–72. http://dx.doi.org/10.1016/0925-9635(93)90201-c.
Повний текст джерелаLabrador, Natalie Yumiko, and Daniel V. Esposito. "(Invited) Multifunctional Membrane Coated Electrocatalysts." ECS Meeting Abstracts MA2018-01, no. 31 (April 13, 2018): 1875. http://dx.doi.org/10.1149/ma2018-01/31/1875.
Повний текст джерелаRahman, Mujib Ur, Yonghao Xi, Haipeng Li, Fei Chen, Dongjie Liu, and Jinjia Wei. "Dynamics and Structure Formation of Confined Polymer Thin Films Supported on Solid Substrates." Polymers 13, no. 10 (May 17, 2021): 1621. http://dx.doi.org/10.3390/polym13101621.
Повний текст джерелаVanek, J., V. Cech, R. Prikryl, J. Zemek, and V. Perina. "Basic characteristics of the a-SiOC∶H thin films prepared by PE CVD." Czechoslovak Journal of Physics 54, S3 (March 2004): C937—C942. http://dx.doi.org/10.1007/bf03166511.
Повний текст джерелаNagai, Hiroki, Naoki Ogawa, and Mitsunobu Sato. "Deep-Ultraviolet Transparent Conductive MWCNT/SiO2 Composite Thin Film Fabricated by UV Irradiation at Ambient Temperature onto Spin-Coated Molecular Precursor Film." Nanomaterials 11, no. 5 (May 20, 2021): 1348. http://dx.doi.org/10.3390/nano11051348.
Повний текст джерелаSingh, Sarab Preet, and Pankaj Srivastava. "Recent Progress in the Understanding of Si-Nanostructures Formation in a-SiNx:H Thin Film for Si-Based Optoelectronic Devices." Solid State Phenomena 171 (May 2011): 1–17. http://dx.doi.org/10.4028/www.scientific.net/ssp.171.1.
Повний текст джерелаLU, WANBING, SHAOGANG GUO, JIANTAO WANG, YUN LI, XINZHAN WANG, GENGXI YU, SHANSHAN FAN, and GUANGSHENG FU. "MICROSTRUCTURAL PROPERTIES OF NC-Si/SiO2 FILMS IN SITU GROWN BY REACTIVE MAGNETRON CO-SPUTTERING." International Journal of Nanoscience 11, no. 06 (December 2012): 1240035. http://dx.doi.org/10.1142/s0219581x12400352.
Повний текст джерелаДисертації з теми "A-SiOx:H Thin Films"
Castro, Galnares Sebastián. "Control of morphology for enhanced electronic transport in PECVD-grown a-Si : H Thin Films." Thesis, Massachusetts Institute of Technology, 2010. http://hdl.handle.net/1721.1/62528.
Повний текст джерелаCataloged from PDF version of thesis.
Includes bibliographical references (p. 85-88).
Solar cells have become an increasingly viable alternative to traditional, pollution causing power generation methods. Although crystalline silicon (c-Si) modules make up most of the market, thin films such as hydrogenated amorphous silicon (a-Si:H) are attractive for use in solar cell modules because of the capacity to fabricate cells with much less material. However, several challenges exist in making this material a more practical alternative to c-Si; despite having superior optical absorption properties, a-Si:H suffers in electronic transport, having a hole mobility 3-7 orders of magnitude less than that of c-Si. In the MOSFET transistor industry, carrier speeds and thus mobilities of c-Si were improved through the application of stress in the material. This work hypothesizes that a similar application of stress on a-Si:H thin films can enhance this material's hole mobility. A comprehensive study of the parameter space for a plasma enhanced chemical vapor deposition technique used to produce a-Si:H is performed. This enables the control of stress within the deposited film, from compressive to tensile; the mechanical limits of the material resulting in buckling and delamination failure are observed. Further characterization of a-Si:H thin films with different levels of engineered stress was performed; an analysis of the films' surface using AFM measurements to calculate a fractal dimension for each did not result in a significant descriptor of the surfaces' domain distribution. This work includes a detailed analysis of the theory of time-of-flight for measuring carrier mobility in thin film materials, and the system requirements needed to perform them.
by Sebastiián Castro Galnares.
S.M.
Pepenene, Refuoe Donald. "Macroscopic and Microscopic surface features of Hydrogenated silicon thin films." University of the Western Cape, 2018. http://hdl.handle.net/11394/6414.
Повний текст джерелаAn increasing energy demand and growing environmental concerns regarding the use of fossil fuels in South Africa has led to the challenge to explore cheap, alternative sources of energy. The generation of electricity from Photovoltaic (PV) devices such as solar cells is currently seen as a viable alternative source of clean energy. As such, crystalline, amorphous and nanocrystalline silicon thin films are expected to play increasingly important roles as economically viable materials for PV development. Despite the growing interest shown in these materials, challenges such as the partial understanding of standardized measurement protocols, and the relationship between the structure and optoelectronic properties still need to be overcome.
Larbi, Fadila. "Traitement de couches minces et de dispositifs à base de a-Si : H par un plasma d'hydrogène : Etude in situ par ellipsométrie spectroscopique." Thesis, Reims, 2014. http://www.theses.fr/2014REIMS010/document.
Повний текст джерелаThis work is a contribution to the study of the interaction between hydrogenated amorphous silicon (a-Si:H) thin films and hydrogen plasma in a PECVD (Plasma Enhanced Chemical Vapor Deposition) reactor. The kinetics of silicon etching by atomic hydrogen is monitored in situ by UV - visble ellipsometry .Several plasma parameters (temperature, RF power, H2 gas pressure, the doping of the material) that may impact the kinetics were probed. An analysis of the spectroscopic ellipsometry spectra, thanks to an appropriate optical model, allowed evidencing their effects on the time constant, the thickness and the hydrogen excess of the H-modified layer.The same hydrogen plasma treatment repeated on i/p and i/n H base junctions revealed a particular behavior of the etching kinetics in the junction zone. This effect is interpreted in the frame of a simple of hydrogen diffusion model under an electric field
AKA, BOKO. "Photodecomposition sensibilisee au mercure du monosilane (hg-photo-cvd) : application au depot en couches minces de silicium amorphe hydrogene (a-si : h)." Université Louis Pasteur (Strasbourg) (1971-2008), 1989. http://www.theses.fr/1989STR13026.
Повний текст джерелаZhou, Rong-Quan, and 周榮泉. "Study on the fabrication and phase transformation of A-si: H thin films." Thesis, 1988. http://ndltd.ncl.edu.tw/handle/46664678686047656046.
Повний текст джерелаBurlaka, Vladimir. "Critical thicknesses in Nb-H thin films: coherent and incoherent phase transitions, change of precipitation and growth modes and ultrahigh mechanical stress." Doctoral thesis, 2015. http://hdl.handle.net/11858/00-1735-0000-0028-87E9-A.
Повний текст джерелаCHEN, ZHI-YANG, and 陳志洋. "The effect of graded-gap and barrier layer structure on the electroluminescence propevties of a-sic: H P-I-N thin-film light emitting diode." Thesis, 1992. http://ndltd.ncl.edu.tw/handle/77480092752820881157.
Повний текст джерелаКниги з теми "A-SiOx:H Thin Films"
Senoussaoui, Nadia. Einfluss der Oberflächenstrukturierung auf die optischen Eigenschaften der Dünnschichtsolarzellen auf der Basis von a-Si : H und [mu]c-Si: H. Jülich: Forschungszentrum Jülich, Zentralbibliothek, 2004.
Знайти повний текст джерелаJackson, Robert. This Southern Advent. Oxford University Press, 2017. http://dx.doi.org/10.1093/acprof:oso/9780190660178.003.0002.
Повний текст джерелаTowlson, Jon. Candyman. Liverpool University Press, 2018. http://dx.doi.org/10.3828/liverpool/9781911325543.001.0001.
Повний текст джерелаFoltz, Jonathan. Out of Focus. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780190676490.003.0004.
Повний текст джерелаPapanikolaou, Dimitris. Greek Weird Wave. Edinburgh University Press, 2020. http://dx.doi.org/10.3366/edinburgh/9781474436311.001.0001.
Повний текст джерелаFoltz, Jonathan. The Novel after Film. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780190676490.001.0001.
Повний текст джерелаBrown, Matthew H. Indirect Subjects. Duke University Press, 2021. http://dx.doi.org/10.1215/9781478021506.
Повний текст джерелаJohnston, Mark. Sensory Disclosure. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198732570.003.0007.
Повний текст джерелаSutherland, Doris V. The Mummy. Liverpool University Press, 2019. http://dx.doi.org/10.3828/liverpool/9781911325956.001.0001.
Повний текст джерелаBlyth, Michael. In the Mouth of Madness. Liverpool University Press, 2018. http://dx.doi.org/10.3828/liverpool/9781911325406.001.0001.
Повний текст джерелаЧастини книг з теми "A-SiOx:H Thin Films"
Tay, Roland Yingjie. "A New Single-Source Precursor for Monolayer h-BN and h-BCN Thin Films." In Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride, 99–115. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-8809-4_7.
Повний текст джерелаMandelis, A., R. E. Wagner, K. Ghandi, R. Baltman, and Phat Dao. "Photopyroelectric Spectroscopy (PPES) of a-Si: H Thin Films on Quartz." In Photoacoustic and Photothermal Phenomena II, 110–12. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-540-46972-8_26.
Повний текст джерелаGüneş, Mehmet. "Native and Light Induced Defect States in Wide Band Gap Hydrogenated Amorphous Silicon-Carbon(a-Si1-X Cx :H) Alloy Thin Films." In Diamond Based Composites, 285–99. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5592-2_24.
Повний текст джерелаSohn, Hong Lae, Young Tae Cho, and Bong Ju Lee. "Measurement of Carboxyl Group Separated from a Thin Film Copolymerized by Low-Temperature Plasma at Atmospheric Pressure of C2H2 and CO2." In Advanced Nondestructive Evaluation I, 1332–35. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-412-x.1332.
Повний текст джерелаChebwogen, Judith, and Christopher Mkirema Maghanga. "Fabrication and Characterization of Cobalt-Pigmented Anodized Zinc for Photocatalytic Application." In Thin Films. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.93790.
Повний текст джерелаPriya, Pradip Kumar, Ram Pratap Yadav, Hari Pratap Bhasker, Anil Kumar, and Kusum Lata Pandey. "Investigation of Substrate-effect on BaF2 Thin Films: A Study of Fractal Nature." In Materials Science: A Field of Diverse Industrial Applications, 95–109. BENTHAM SCIENCE PUBLISHERS, 2023. http://dx.doi.org/10.2174/9789815051247123010007.
Повний текст джерела"is to identify these adhesional strains by using the radius of curvature and to find the stress in each material. We assume that the total strain (£tot)at any point of the system represented in Fig. 2, is: (Navier-Bemouilli’s hypothesis). Therefore, the effect of transverse shear (rxy = 0) is neglected, (ii) the radius of curvature is large compared with transverse dimensions [width (b) and thickness (h) of the three-layer system], leading to R\ b\, hh (iii) longitudinal elements of the beam are subjected only to simple tension or compression inducing stresses in the x direction, (iv) Young’s modulii of the coating having bulk properties, the interphase and the substrate have the same value in both tension and compression (flexural modulus). Based on these assumptions, final uni-axial residual stresses (a), in the x -direction of the three-layer system (bulk coating/interphase/substrate) are given by: of the zero deformation (y0)- Therefore, we consider two equilibrium conditions for the force (N) and the moment (M) for any cross section (area S) of the coating/interphase/ substrate system:." In Adhesion Aspects of Thin Films, Volume 1, 232–33. CRC Press, 2014. http://dx.doi.org/10.1201/b11971-38.
Повний текст джерелаSchmidbaur, H., and J. Zech. "Tetra(silyl)methane, (H 3 Si) 4 C, a Volatile Carbosilane for the Chemical Vapor Deposition of Amorphous Silicon Carbide Thin Films." In Efficient Methods for Preparing Silicon Compounds, 13–19. Elsevier, 2016. http://dx.doi.org/10.1016/b978-0-12-803530-6.00004-4.
Повний текст джерелаZapperi, Stefano. "The Barkhausen Effect." In Crackling Noise, 131–53. Oxford University PressOxford, 2022. http://dx.doi.org/10.1093/oso/9780192856951.003.0008.
Повний текст джерелаGreiff, Louis K. "Lawrence and Twenty-First-Century Film." In The Edinburgh Companion to D. H. Lawrence and the Arts, 413–25. Edinburgh University Press, 2020. http://dx.doi.org/10.3366/edinburgh/9781474456623.003.0028.
Повний текст джерелаТези доповідей конференцій з теми "A-SiOx:H Thin Films"
Zhang, Wei P., Jing B. Cui, Shan Xie, Yi Z. Song, Changsui Wang, Guien Zhou, and Jian X. Wu. "Structure and optical properties of a-C:H/a-SiO x :H multilayer thin films." In Shanghai - DL tentative, edited by Shixun Zhou and Yongling Wang. SPIE, 1991. http://dx.doi.org/10.1117/12.47274.
Повний текст джерелаLiu, Xu, Xong-bin Chen, Pei-fu Gu, Yong-hong Ye, and Jing-fa Tang. "A study of Electrochromic thin films and Devices by Photothermal Deflection Technique." In Optical Interference Coatings. Washington, D.C.: Optica Publishing Group, 1995. http://dx.doi.org/10.1364/oic.1995.wb4.
Повний текст джерелаZaitsev, D. V., and O. A. Kabov. "Microgap Cooling Technique Based on Evaporation of Thin Liquid Films." In ASME 2009 InterPACK Conference collocated with the ASME 2009 Summer Heat Transfer Conference and the ASME 2009 3rd International Conference on Energy Sustainability. ASMEDC, 2009. http://dx.doi.org/10.1115/interpack2009-89318.
Повний текст джерелаMota, R. P., I. A. Perrenoud, R. Y. Honda, M. A. Algatti, M. E. Kayama, K. G. Kostov, T. Sadahito China, and N. C. Cruz. "Biocompatible thin films obtained from Heparim-methane plasma process." In 13th International Conference on Plasma Surface Engineering September 10 - 14, 2012, in Garmisch-Partenkirchen, Germany. Linköping University Electronic Press, 2013. http://dx.doi.org/10.3384/wcc2.368-371.
Повний текст джерелаOonishi, S., Y. Kurokawa, and A. Yamada. "Direct Bonding using a-Si:H Thin Films for the Fabrication of Chalcopyrite Tandem Solar Cells." In 2012 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2012. http://dx.doi.org/10.7567/ssdm.2012.h-1-5.
Повний текст джерелаNevin, W. A., H. Yamagishi, K. Asaoka, H. Nishio, and Y. Tawada. "Comparison of the Electronic Properties of a-Si: H and a-Si:D Thin Films and Solar Cells." In 1990 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1990. http://dx.doi.org/10.7567/ssdm.1990.d-9-4.
Повний текст джерелаSaparina, S. V., A. R. Gazizov, and S. S. Kharintsev. "Anti-Stokes Raman Scattering induced in Defects of Amorphous Carbon Thin Films." In Bragg Gratings, Photosensitivity and Poling in Glass Waveguides and Materials. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/bgppm.2022.jw3a.54.
Повний текст джерелаWu, Chia-Che, Cheng-Chun Lee, G. Z. Cao, and I. Y. Shen. "Direct Measurements of Transverse Piezoelectric Coefficient e31 of PZT Thin Films." In ASME 2004 International Mechanical Engineering Congress and Exposition. ASMEDC, 2004. http://dx.doi.org/10.1115/imece2004-59421.
Повний текст джерелаSingh, Chandra Bhal, Sekhar Bhattacharya, Nafis Ahmed, and P. Balaji Bhargav. "Effect of boron doping on optical and electrical properties of p-type a-Si∶H films for thin film solar cells application." In 2014 1st International Conference on Non Conventional Energy (ICONCE). IEEE, 2014. http://dx.doi.org/10.1109/iconce.2014.6808678.
Повний текст джерелаShieh, Jay, Szu-Wei Chen, and Chia-Yu Fang. "Photocurrent Response of Composite Perovskite Oxide Thin Films With Specific Semiconducting and Ferroelectric Properties." In ASME 2013 Conference on Smart Materials, Adaptive Structures and Intelligent Systems. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/smasis2013-3058.
Повний текст джерела