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Статті в журналах з теми "32 NM TECHNOLOGY NODE"
Allgair, John, Benjamin Bunday, Aaron Cordes, Pete Lipscomb, Milt Godwin, Victor Vartanian, Michael Bishop, Doron Arazi, and Kye-Weon Kim. "Metrology Requirements for the 32 nm Technology Node and Beyond." ECS Transactions 18, no. 1 (December 18, 2019): 151–60. http://dx.doi.org/10.1149/1.3096443.
Повний текст джерелаHuang, Zhengfeng, Di Cao, Jianguo Cui, Yingchun Lu, Yiming Ouyang, Haochen Qi, Qi Xu, Huaguo Liang, and Tianming Ni. "Design of Multiple Node Upset Tolerant Latch in 32 nm CMOS Technology." Journal of Computer-Aided Design & Computer Graphics 33, no. 3 (March 1, 2021): 346–55. http://dx.doi.org/10.3724/sp.j.1089.2021.18385.
Повний текст джерелаHuang, Zhengfeng, Yang Guo, Shangjie Pan, Yingchun Lu, Huaguo Liang, Haochen Qi, Yiming Ouyang, Tianming Ni, and Qi Xu. "Tri-Node Upsets Self-Recovery Latch Design in 32 nm CMOS Technology." Journal of Computer-Aided Design & Computer Graphics 32, no. 12 (December 1, 2020): 2013–20. http://dx.doi.org/10.3724/sp.j.1089.2020.18160.
Повний текст джерелаOno, Kazuo, Kenzo Kurotsuchi, Yoshihisa Fujisaki, Riichiro Takemura, Motoyasu Terao, and Norikatsu Takaura. "Resistive Switching Ion-Plug Memory for 32-nm Technology Node and Beyond." Japanese Journal of Applied Physics 48, no. 4 (April 20, 2009): 04C160. http://dx.doi.org/10.1143/jjap.48.04c160.
Повний текст джерелаOrlowski, Marius, and Andreas Wild. "Can 3-D Devices Extend Moore's Law Beyond the 32 nm Technology Node?" ECS Transactions 3, no. 6 (December 21, 2019): 3–17. http://dx.doi.org/10.1149/1.2357050.
Повний текст джерелаPark, Dae-Gyu, Mike Chudzik, and Haizhou Yin. "Challenges in FEOL Logic Device Integration for 32 nm Technology Node and Beyond." ECS Transactions 11, no. 6 (December 19, 2019): 371–77. http://dx.doi.org/10.1149/1.2778394.
Повний текст джерелаHussain, Inamul, and Saurabh Chaudhury. "CNFET Based Low Power Full Adder Circuit for VLSI Applications." Nanoscience & Nanotechnology-Asia 10, no. 3 (June 17, 2020): 286–91. http://dx.doi.org/10.2174/2210681209666190220122553.
Повний текст джерелаKumar, Amresh, and Aminul Islam. "Multi-gate device and summing-circuit co-design robustness studies @ 32-nm technology node." Microsystem Technologies 23, no. 9 (July 6, 2016): 4099–109. http://dx.doi.org/10.1007/s00542-016-3055-4.
Повний текст джерелаAndrieu, F., O. Weber, T. Ernst, O. Faynot, and S. Deleonibus. "Strain and channel engineering for fully depleted SOI MOSFETs towards the 32 nm technology node." Microelectronic Engineering 84, no. 9-10 (September 2007): 2047–53. http://dx.doi.org/10.1016/j.mee.2007.04.132.
Повний текст джерелаCollaert, N., R. Rooyackers, A. Hikavyy, A. Dixit, F. Leys, P. Verheyen, R. Loo, M. Jurczak, and S. Biesemans. "Multi-gate devices for the 32 nm technology node and beyond: Challenges for Selective Epitaxial Growth." Thin Solid Films 517, no. 1 (November 2008): 101–4. http://dx.doi.org/10.1016/j.tsf.2008.08.031.
Повний текст джерелаДисертації з теми "32 NM TECHNOLOGY NODE"
Bansal, Anil Kumar. "CMOS scaling considerations in sub 10-nm node multiple-gate FETS." Thesis, IIT Delhi, 2019. http://eprint.iitd.ac.in:80//handle/2074/8046.
Повний текст джерелаDeng, Jie. "Device modeling and circuit performance evaluation for nanoscale devices : silicon technology beyond 45 nm node and carbon nanotube field effect transistors /." May be available electronically:, 2007. http://proquest.umi.com/login?COPT=REJTPTU1MTUmSU5UPTAmVkVSPTI=&clientId=12498.
Повний текст джерелаYADAV, PUNEET. "DESIGN AND ANALYSIS OF A LOW POWER AND HIGH PERFORMANCE 10T SRAM CELL AT 32 NM TECHNOLOGY NODE." Thesis, 2023. http://dspace.dtu.ac.in:8080/jspui/handle/repository/19835.
Повний текст джерелаCHANG, JIA MIN, and 張家民. "PROCESS WINDOW AND OPC RULES FOR 32 NM NODE WITH 1.3 NA IMMERSION LITHOGRAPHY SYSTEM." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/68565777250786976346.
Повний текст джерела南台科技大學
電子工程系
96
This thesis discusses the feasibility of 32 nm node with 1.3 NA and 193 nm light source immersion lithography system and tries to extend the lifetime of the system. We present the process window and some typical OPC rules by numerical simulation with open software SPLAT. Without any resolution enhancement technologies (RETs), the 10% variation process window is 44 nm × 4.09% and the 15% variation process window is 54 nm × 6.80%. We find that OPC rules for 32 nm node with the system is extremely tedious and suggest that the minimum spacing between two parallel lines is 74 nm. Therefore, higher NA system will be helpful to achieve real 32 nm half pitch.
Chen, Hsiu Pin, and 陳修斌. "Device-level Doping Profile Analysis for Saddle-fin Device in 30 nm DRAM Technology Node." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/u452zb.
Повний текст джерелаShi-HaoChen and 陳仕豪. "Performance Optimization of Gate-All-Around MOSFETs by Inner Spacers at 5 nm Technology Node." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/jg54wt.
Повний текст джерела國立成功大學
奈米積體電路工程碩士學位學程
106
The evolution of semiconductor technology has been progressed since Moore’s Law proposed in 1964. Dimension scaling is always the challenge for each technology node to reduce producing cost. With the continuous scaling of devices, short-channel effects are more and more severe in limiting the performance enhancement. Multi-gate struc-tures, which enhance the gate control on short-channel effects and optimize the electri-cal characteristics, can overcome the limitation; FinFET is generally applied for ad-vanced semiconductor fabrications. However, for sub-5 nm technology node, FinFETs can not offer the enough gate control, resulting in worse short-channel effects. On the other hand, GAA MOSFETs with the superior gate control of channel electrostatic are considered as a possible extension for the following technology nodes. Nevertheless, they increase the undesirable parasitic capacitances. In this thesis, an analytical model is used to calculate the parasitic capacitances caused by GAA MOSFETs. Next, the optimization by inner spacer is presented to re-duce the additional parasitic capacitances. Such methodology helps us to ensure that the improvement is effective and feasible. Then we use Synopsys TCAD to do the process simulations. GAA MOSFETs are processed with SiGe epitaxy. Electrical characteristic comparison for the devices with and without inner spacers is discussed. 5nm technology node in ITRS roadmap is the specification we adopt in this thesis. Different spacer lengths are the main topic; the longer spacers extend the effective channel length and improve short-channel effects. Furthermore, the future design, a new integration scheme featuring bulk Si-base and cost-effective fabrication, is proposed. To overcome the drawback of GAA MOSFETs compared to FinFET: the increase of parasitic capacitances, inner spacers are adopted in fabrication. The proposed process is feasible and promising in the future based on our preliminary data.
Книги з теми "32 NM TECHNOLOGY NODE"
Wang, Guilei. Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-15-0046-6.
Повний текст джерелаWang, Guilei. Investigation on Sige Selective Epitaxy for Source and Drain Engineering in 22 Nm CMOS Technology Node and Beyond. Springer Singapore Pte. Limited, 2020.
Знайти повний текст джерелаWang, Guilei. Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond. Springer, 2019.
Знайти повний текст джерелаЧастини книг з теми "32 NM TECHNOLOGY NODE"
Ahlawat, Siddhant, Siddharth, Bhawna Rawat, and Poornima Mittal. "A Comparative Performance Analysis of Varied 10T SRAM Cell Topologies at 32 nm Technology Node." In Modeling, Simulation and Optimization, 63–75. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-0836-1_5.
Повний текст джерелаRawat, Bhawna, and Poornima Mittal. "Investigating the Impact of Schmitt Trigger on SRAM Cells at 32 nm Technology Node for Low Voltage Applications." In Lecture Notes in Electrical Engineering, 53–63. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-6780-1_5.
Повний текст джерелаTomita, Hiroshi, Yuji Yamada, Hidenobu Nagashima, Norio Ishikawa, and Yumiko Taniguchi. "New FEOL Cleaning Technology for Advanced Devices beyond 45 nm Node." In Solid State Phenomena, 185–88. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-46-9.185.
Повний текст джерелаJeffry Louis, V., and Jai Gopal Pandey. "A Novel Design of SRAM Using Memristors at 45 nm Technology." In Communications in Computer and Information Science, 579–89. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-32-9767-8_48.
Повний текст джерелаSaxena, Anmol, Vyom Saraf, and Rutu Parekh. "ASIC Implementation of a 16-Bit Brent–Kung Adder at 45 nm Technology Node." In Sustainable Technology and Advanced Computing in Electrical Engineering, 83–105. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-4364-5_8.
Повний текст джерелаGupta, Vaibhav, Atharv Kapre, Shashank Kumar Dubey, and Aminul Islam. "Implementation and Analysis of CNFET-Based PCRAM Cell Using 32 nm Technology." In Lecture Notes in Electrical Engineering, 251–63. Singapore: Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-3691-5_21.
Повний текст джерелаAyush, Poornima Mittal, and Rajesh Rohilla. "Comparative Analysis of Current Sense Amplifier Architectures for SRAM at 45 nm Technology Node." In Advances in Data-Driven Computing and Intelligent Systems, 633–40. Singapore: Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-3250-4_48.
Повний текст джерелаWang, Guilei. "Strained Silicon Technology." In Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond, 9–21. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-15-0046-6_2.
Повний текст джерелаPittala, Suresh Kumar, and A. Jhansi Rani. "Complementary Energy Path Adiabatic Logic-Based Adder Design in 32 Nm FinFET Technology." In Advances in Communication, Devices and Networking, 87–95. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-7901-6_11.
Повний текст джерелаAhmed Khan, Imran, Md Rashid Mahmood, and J. P. Keshari. "Analytical Comparison of Power Efficient and High Performance Adders at 32 nm Technology." In Lecture Notes in Networks and Systems, 659–70. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-3172-9_62.
Повний текст джерелаТези доповідей конференцій з теми "32 NM TECHNOLOGY NODE"
Deschacht, D. "Interconnect design for a 32 nm node technology." In Technology of Integrated Systems in Nanoscale Era (DTIS). IEEE, 2011. http://dx.doi.org/10.1109/dtis.2011.5941410.
Повний текст джерелаBurghartz, J., M. Irmscher, F. Letzkus, J. Kretz, and D. Resnick. "Lithography for the 32-nm Node and Beyond." In 2006 Bipolar/BiCMOS Circuits and Technology Meeting. IEEE, 2006. http://dx.doi.org/10.1109/bipol.2006.311125.
Повний текст джерелаShahidi, Ghavam G. "Design-technology interaction for post-32 nm node CMOS technologies." In 2010 IEEE Symposium on VLSI Technology. IEEE, 2010. http://dx.doi.org/10.1109/vlsit.2010.5556204.
Повний текст джерелаAdachi, Takashi, Yuichi Inazuki, Takanori Sutou, Yasutaka Morikawa, Nobuhito Toyama, Hiroshi Mohri, and Naoya Hayashi. "45-32-nm node photomask technology with water immersion lithography." In 26th Annual BACUS Symposium on Photomask Technology, edited by Patrick M. Martin and Robert J. Naber. SPIE, 2006. http://dx.doi.org/10.1117/12.689740.
Повний текст джерелаGambino, Jeff, Fen Chen, and John He. "Copper interconnect technology for the 32 nm node and beyond." In 2009 IEEE Custom Integrated Circuits Conference (CICC). IEEE, 2009. http://dx.doi.org/10.1109/cicc.2009.5280904.
Повний текст джерелаWard, Brian S., Lena Zavylova, Peter de Bisschop, and Jeroen van de Kerkhove. "Empirical study of OPC metrology requirements for 32-nm node logic." In Photomask Technology, edited by Hiroichi Kawahira and Larry S. Zurbrick. SPIE, 2008. http://dx.doi.org/10.1117/12.801458.
Повний текст джерелаLu, C. L., L. Y. Hsia, T. H. Cheng, S. C. Chang, W. C. Wang, H. J. Lee, and Y. C. Ku. "Improvement of etching selectivity for 32-nm node mask making." In Photomask and Next-Generation Lithography Mask Technology XIV, edited by Hidehiro Watanabe. SPIE, 2007. http://dx.doi.org/10.1117/12.728928.
Повний текст джерелаMonahan, K. M. "Enabling DFM and APC strategies at the 32 nm technology node." In ISSM 2005, IEEE International Symposium on Semiconductor Manufacturing, 2005. IEEE, 2005. http://dx.doi.org/10.1109/issm.2005.1513388.
Повний текст джерелаIessi, Umberto, Sara Loi, Antonio Salerno, Pierluigi Rigolli, Elio De Chiara, Catia Turco, Roberto Colombo, Marco Polli, and Antonio Mani. "Double patterning overlay and CD budget for 32 nm technology node." In SPIE Advanced Lithography. SPIE, 2008. http://dx.doi.org/10.1117/12.772795.
Повний текст джерелаFukutome, H., K. Kawamura, H. Ohta, K. Hosaka, T. Sakoda, Y. Morisaki, and Y. Momiyama. "Cost-effective Ni-melt-FUSI boosting 32-nm node LSTP transistors." In 2008 Symposium on VLSI Technology. IEEE, 2008. http://dx.doi.org/10.1109/vlsit.2008.4588598.
Повний текст джерела