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Автор: Grafiati
Опубліковано: 6 вересня 2023

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1

Li, Jiacheng, Hui Gao, Guoliang Zhou, Yan Li, Ye Chai, and Guolin Hao. "Controllable growth of large-area 1T′, 2H ultrathin MoTe2 films, and 1T′–2H in-plane homojunction." Journal of Applied Physics 131, no. 18 (May 14, 2022): 185302. http://dx.doi.org/10.1063/5.0087432.

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Atomically thin molybdenum ditelluride (MoTe2) has been intensively studied as an emerging material for electronics and optoelectronics due to its unique properties. While the small free energy difference between the 2H and 1T′ phases of MoTe2 always results in mixed-phase growth, precisely controlled phase transition of MoTe2 nanostructures is still a considerable challenge. Here, the centimeter-scale 1T′, 2H ultrathin MoTe2 films, and in-plane 1T′–2H homojunction have been synthesized by ambient pressure chemical vapor deposition based on the precursor design and space-confined strategies. The controllable growth of pure 1T′, 2H MoTe2, and 1T′–2H mixed-phase MoTe2 with phase separation and homogeneous mixture, respectively, has been achieved by adjusting growth temperature and growth time. The thickness of synthesized 1T′ and 2H ultrathin MoTe2 films can be effectively controlled by tuning the space-confined height. The corresponding growth mechanism was further illuminated based on systematically experimental characterizations and computational fluid dynamics simulations. The electrical transport properties of 1T′ and 2H MoTe2 films were investigated by conductive atomic force microscope and MoTe2-based thin-film field-effect transistors. Our experimental results provide a new route to realize the phase transition of two-dimensional materials, which makes these materials easily accessible as functional building blocks for next-generation electronic and optoelectronic devices.
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2

Zhang, Lu-Lu, Lu-Feng Xu, Yun-Feng Wu, Jin-Rong Tian, and Yan-Rong Song. "Passively harmonic mode-locked erbium-doped fiber laser based on 2H-MoTe2 saturable absorber." Laser Physics Letters 19, no. 6 (April 27, 2022): 065101. http://dx.doi.org/10.1088/1612-202x/ac67d4.

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Abstract We demonstrated a harmonic mode-locked Erbium-doped fiber laser based on a saturable absorber (SA) of 2H-MoTe2, which is a member of the transition metal dichalcogenides. The SA mode-locker was made by integrating the 2H-MoTe2 into a D-shaped fiber, and then was inserted into an erbium-doped fiber laser for mode-locking. The nonlinear modulation depth and saturation power of 2H-MoTe2-based SA were 10.9% and 19 MW cm−2, respectively. The fundamentally mode-locked pulse train had a pulse width of 577 fs and a repetition rate of 14.32 MHz. The highest order of harmonic mode locking was 55th, which had the repetition rate of 787.6 MHz, pulse width of 820 fs and average output power of 11.8 mW. To the best of our knowledge, this is the highest operating repetition frequency that has ever been demonstrated in a 2H-MoTe2-based fiber laser. The experimental results validate the feasibility of 2H-MoTe2 as a promising SA for generating ultrashort pulses with high repetition rates.
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3

Lin, Der-Yuh, Hung-Pin Hsu, Guang-Hsin Liu, Ting-Zhong Dai, and Yu-Tai Shih. "Enhanced Photoresponsivity of 2H-MoTe2 by Inserting 1T-MoTe2 Interlayer Contact for Photodetector Applications." Crystals 11, no. 8 (August 16, 2021): 964. http://dx.doi.org/10.3390/cryst11080964.

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Анотація:
The 2H molybdenum telluride (MoTe2) photodetector structures were made with inserting 1T-MoTe2 interlayer contacts. The optical response properties such as photoconductivity (PC) spectroscopy, illumination intensity dependent photoresponsivity, frequency dependent photocurrent, and time-resolved photoresponse were carried out in this study. In PC spectra, a much higher photoresponsivity of 2H-MoTe2 were observed by inserting 1T-MoTe2 interlayer contact. The frequency dependent photocurrent and time-resolved photoresponse investigations explore the carrier kinetic decay process of MoTe2 with different electrode contact. The Schottky barrier heights (SBH) extracted by thermionic emission theory were also investigated by inserting 1T-MoTe2 interlayer contacts. The results show the potential applicability for photodetection devices based MoTe2 layered transition metal dichalcogenides semiconductors.
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4

Shallenberger, Jeffrey R., Rebecca Katz, and Zhiqiang Mao. "1T′-MoTe2 and 2H-MoTe2 by XPS." Surface Science Spectra 28, no. 2 (December 2021): 024001. http://dx.doi.org/10.1116/6.0001100.

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5

Xu, Tao, Aolin Li, Shanshan Wang, Yinlong Tan, and Xiang’ai Cheng. "Phase-Controllable Chemical Vapor Deposition Synthesis of Atomically Thin MoTe2." Nanomaterials 12, no. 23 (November 23, 2022): 4133. http://dx.doi.org/10.3390/nano12234133.

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Анотація:
Two-dimensional (2D) molybdenum telluride (MoTe2) is attracting increasing attention for its potential applications in electronic, optoelectronic, photonic and catalytic fields, owing to the unique band structures of both stable 2H phase and 1T′ phase. However, the direct growth of high-quality atomically thin MoTe2 with the controllable proportion of 2H and 1T′ phase seems hard due to easy phase transformation since the potential barrier between the two phases is extremely small. Herein, we report a strategy of the phase-controllable chemical vapor deposition (CVD) synthesis for few-layer (<3 layer) MoTe2. Besides, a new understanding of the phase-controllable growth mechanism is presented based on a combination of experimental results and DFT calculations. The lattice distortion caused by Te vacancies or structural strain might make 1T′-MoTe2 more stable. The conditions for 2H to 1T′ phase conversion are determined to be the following: Te monovacancies exceeding 4% or Te divacancies exceeding 8%, or lattice strain beyond 6%. In contrast, sufficient Te supply and appropriate tellurization velocity are essential to obtaining the prevailing 2H-MoTe2. Our work provides a novel perspective on the preparation of 2D transition metal chalcogenides (TMDs) with the controllable proportion of 2H and 1T′ phase and paves the way to their subsequent potential application of these hybrid phases.
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6

Xu, Xiaolong, Yu Pan, Shuai Liu, Bo Han, Pingfan Gu, Siheng Li, Wanjin Xu, et al. "Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe2." Science 372, no. 6538 (April 8, 2021): 195–200. http://dx.doi.org/10.1126/science.abf5825.

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Анотація:
The integration of two-dimensional (2D) van der Waals semiconductors into silicon electronics technology will require the production of large-scale, uniform, and highly crystalline films. We report a route for synthesizing wafer-scale single-crystalline 2H molybdenum ditelluride (MoTe2) semiconductors on an amorphous insulating substrate. In-plane 2D-epitaxy growth by tellurizing was triggered from a deliberately implanted single seed crystal. The resulting single-crystalline film completely covered a 2.5-centimeter wafer with excellent uniformity. The 2H MoTe2 2D single-crystalline film can use itself as a template for further rapid epitaxy in a vertical manner. Transistor arrays fabricated with the as-prepared 2H MoTe2 single crystals exhibited high electrical performance, with excellent uniformity and 100% device yield.
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7

Ke, Cheng, Jian-Qing Dai, and Jin Yuan. "Strong modulation of electronic properties of monolayer MoTe2 using a ferroelectric LiNbO3(0001) substrate." Journal of Materials Chemistry C 9, no. 42 (2021): 15102–11. http://dx.doi.org/10.1039/d1tc03108b.

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8

Sengupta, Rohan, Saroj Dangi, Sergiy Krylyuk, Albert V. Davydov, and Spyridon Pavlidis. "Phase transition of Al2O3-encapsulated MoTe2 via rapid thermal annealing." Applied Physics Letters 121, no. 3 (July 18, 2022): 033101. http://dx.doi.org/10.1063/5.0097844.

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Анотація:
Among group VI transition metal dichalcogenides, MoTe2 is predicted to have the smallest energy offset between semiconducting 2H and semimetallic 1T′ states. This makes it an attractive phase change material for both electronic and optoelectronic applications. Here, we report fast, nondestructive, and full phase change in Al2O3-encapsulated 2H-MoTe2 thin films to 1T′-MoTe2 using rapid thermal annealing at 900 °C. Phase change was confirmed using Raman spectroscopy after a short annealing duration of 10 s in both vacuum and nitrogen ambient. No thickness dependence of the transition temperatures was observed for flake thickness ranging from 1.5 to 8 nm. These results represent a major step forward in understanding the structural phase transition properties of MoTe2 thin films using external heating and underline the importance of surface encapsulation for avoiding thin film degradation.
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9

Hao, Xingyu, Zhiying Guo, Haijing Li, Yu Gong, and Dongliang Chen. "Anomalous enhancement of atomic vibration induced by electronic transition in 2H-MoTe2 under compression." Journal of Physics: Condensed Matter 34, no. 2 (October 28, 2021): 025402. http://dx.doi.org/10.1088/1361-648x/ac2ad1.

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Abstract In this work, we explore the atomic vibration and local structure in 2H–MoTe2 by using high-pressure x-ray absorption fine structure spectroscopy up to ∼20 GPa. The discrepancy between the Mo–Te and Mo–Mo bond length in 2H–MoTe2 obtained from extended-XAFS and other techniques shows abnormal increase at 7.3 and 14.8 GPa, which is mainly due to the abrupt enhancement of vibration perpendicular to the bond direction. Ab initio calculations are performed to study the electronic structure of 2H–MoTe2 up to 20 GPa and confirm a semiconductor to semimetal transition around 8 GPa and a Lifshitz transition around 14 GPa. We attribute the anomalous enhancement of vibration perpendicular to the bond direction to electronic transitions. We find the electronic transition induced enhancement of local vibration for the first time. Our finding offers a novel insight into the local atomic vibration and provides a new platform for understanding the relationship between the electronic transition and atomic vibration.
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10

Zhao, Xuan, Yu Wang, Yunli Da, Xinxia Wang, Tingting Wang, Mingquan Xu, Xiaoyun He, et al. "Selective electrochemical production of hydrogen peroxide at zigzag edges of exfoliated molybdenum telluride nanoflakes." National Science Review 7, no. 8 (April 25, 2020): 1360–66. http://dx.doi.org/10.1093/nsr/nwaa084.

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Abstract The two-electron reduction of molecular oxygen represents an effective strategy to enable the green, mild and on-demand synthesis of hydrogen peroxide. Its practical viability, however, hinges on the development of advanced electrocatalysts, preferably composed of non-precious elements, to selectively expedite this reaction, particularly in acidic medium. Our study here introduces 2H-MoTe2 for the first time as the efficient non-precious-metal-based electrocatalyst for the electrochemical production of hydrogen peroxide in acids. We show that exfoliated 2H-MoTe2 nanoflakes have high activity (onset overpotential ∼140 mV and large mass activity of 27 A g−1 at 0.4 V versus reversible hydrogen electrode), great selectivity (H2O2 percentage up to 93%) and decent stability in 0.5 M H2SO4. Theoretical simulations evidence that the high activity and selectivity of 2H-MoTe2 arise from the proper binding energies of HOO* and O* at its zigzag edges that jointly favor the two-electron reduction instead of the four-electron reduction of molecular oxygen.
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11

Chen, Xinpeng, Xiangdong Chen, Xing Ding, and Xiang Yu. "Gas Sensitive Characteristics of Polyaniline Decorated with Molybdenum Ditelluride Nanosheets." Chemosensors 10, no. 7 (July 6, 2022): 264. http://dx.doi.org/10.3390/chemosensors10070264.

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In this work, hydrochloric acid (HCl)-doped molybdenum ditelluride (MoTe2) nanosheets/polyaniline (PANI) nanofiber composites are prepared by in situ chemical oxidation polymerization, and then the composites are deposited on interdigital electrodes (IDEs) to fabricate a NH3 gas sensor. Morphological analysis of the composites reveals that the PANI fibers are deposited on 2D MoTe2 sheets, showing a porous mesh microstructure structure with a more continuous distribution of PANI layer. FTIR spectrum analysis indicates the interaction between the MoTe2 nanosheets and the PANI in the MoTe2/PANI composites. The results demonstrate that the as-prepared MoTe2/PANI composites exhibit higher response than the pure PANI, in particular, the 8 wt.% MoTe2/PANI composites display about 4.23 times enhancement in response value toward 1000 ppm NH3 gas compared with the pure PANI. The enhanced NH3 gas-sensitive properties may be due to the increasing surface area of MoTe2/PANI composite films and the possible interaction of the P-N heterojunctions formed between PANI and the 2H-MoTe2 nanosheets.
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12

Wan, Xi, Mingliang Gao, Shijia Xu, Tianhao Huang, Yaoyu Duan, EnZi Chen, Kun Chen, Xiaoliang Zeng, Weiguang Xie, and Xiaofeng Gu. "Inkjet-printed TMDC–graphene heterostructures for flexible and broadband photodetectors." Journal of Applied Physics 131, no. 23 (June 21, 2022): 234303. http://dx.doi.org/10.1063/5.0093882.

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The development of inkjet-printed 2D crystal inks offers the ability to print different 2D materials on various substrates to form vertical heterostructures. However, the detailed characterization of the atomic structures of the inkjet-printed MoTe2 nanosheets has been rarely reported. In this work, water-based 2D crystal inks of MoTe2, WS2, and graphene have been prepared and printed to obtain the flexible photodetectors. The absorption coefficient of MoTe2 has been estimated as α (500 nm) = 925 ± 47 lg−1 m−1 using the gravimetric method. Intriguingly, the inkjet-printed MoTe2 nanosheets down to 4 nm show both the semiconducting 2H and metallic 1T′ phases. The responsivities of the photodetectors based on MoTe2/graphene and WS2/graphene heterostructures can reach 120 mA/W and 2.5 A/W at 532 nm, respectively. Moreover, the inkjet-printed MoTe2/graphene shows a responsivity of 7.7 mA/W at 940 nm. The fabrication technique of inkjet printing will help design flexible optoelectronic devices based transition metal dichalcogenide–graphene heterostructures for the near-infrared photo detection.
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13

Guo, Jing, and Kai Liu. "Recent Progress in Two-Dimensional MoTe2 Hetero-Phase Homojunctions." Nanomaterials 12, no. 1 (December 30, 2021): 110. http://dx.doi.org/10.3390/nano12010110.

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Анотація:
With the demand for low contact resistance and a clean interface in high-performance field-effect transistors, two-dimensional (2D) hetero-phase homojunctions, which comprise a semiconducting phase of a material as the channel and a metallic phase of the material as electrodes, have attracted growing attention in recent years. In particular, MoTe2 exhibits intriguing properties and its phase is easily altered from semiconducting 2H to metallic 1T′ and vice versa, owing to the extremely small energy barrier between these two phases. MoTe2 thus finds potential applications in electronics as a representative 2D material with multiple phases. In this review, we briefly summarize recent progress in 2D MoTe2 hetero-phase homojunctions. We first introduce the properties of the diverse phases of MoTe2, demonstrate the approaches to the construction of 2D MoTe2 hetero-phase homojunctions, and then show the applications of the homojunctions. Lastly, we discuss the prospects and challenges in this research field.
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14

Nguyen, Manh Hong, Soo Yeon Lim, Takashi Taniguchi, Kenji Wantanabe, and Hyeonsik Cheong. "Interlayer interaction in 2H-MoTe2/hBN heterostructures." 2D Materials 8, no. 4 (July 20, 2021): 045004. http://dx.doi.org/10.1088/2053-1583/ac1254.

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15

Oliva, R., T. Woźniak, F. Dybala, J. Kopaczek, P. Scharoch, and R. Kudrawiec. "Hidden spin-polarized bands in semiconducting 2H-MoTe2." Materials Research Letters 8, no. 2 (December 15, 2019): 75–81. http://dx.doi.org/10.1080/21663831.2019.1702113.

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16

Li, Aolin, Jiangling Pan, Xiongying Dai, and Fangping Ouyang. "Electrical contacts of coplanar 2H/1T′ MoTe2 monolayer." Journal of Applied Physics 125, no. 7 (February 21, 2019): 075104. http://dx.doi.org/10.1063/1.5081936.

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17

He, Hui-Kai, Yong-Bo Jiang, Jun Yu, Zi-Yan Yang, Chao-Fan Li, Ting-Ze Wang, De-Quan Dong, et al. "Ultrafast and stable phase transition realized in MoTe2-based memristive devices." Materials Horizons 9, no. 3 (2022): 1036–44. http://dx.doi.org/10.1039/d1mh01772a.

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Анотація:
An electric-field induced phase transition between semiconducting 2H and metallic 1T′ phases in a MoTe2 device is demonstrated for the first time. The phase transition exhibits faster switching compared with phase-change random-access memory (PCRAM), and shows more controllable switching than conventional memristive devices.
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18

Li, Jin-Huan, Dan Bing, Zhang-Ting Wu, Guo-Qing Wu, Jing Bai, Ru-Xia Du, and Zheng-Qing Qi. "Thickness-dependent excitonic properties of atomically thin 2H-MoTe2." Chinese Physics B 29, no. 1 (January 2020): 017802. http://dx.doi.org/10.1088/1674-1056/ab5a3a.

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19

Snure, Michael, Michael J. Motala, Timothy A. Prusnick, Evan M. Smith, David Moore, Christopher Muratore, Shivashankar R. Vangala, and Nicholas R. Glavin. "Two step synthesis of ultrathin transition metal tellurides." Journal of Vacuum Science & Technology A 40, no. 4 (July 2022): 042202. http://dx.doi.org/10.1116/6.0001893.

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Transition metal tellurides (TMTs) are an exciting group of two-dimensional materials with a wide variety of polytypes and properties. Here, we demonstrate a simple and versatile two-step method for producing MoTe2, WTe2, and PtTe2 films via tellurization of thin metals at temperatures between 400 and 700 °C. Across this temperature range, monoclinic 1T′ phase of MoTe2, orthorhombic Td phase of WTe2, and hexagonal 2H phase of PtTe2 were formed. Based on x-ray diffraction and Raman analysis, temperatures greater than 600 °C were found to produce the best quality MoTe2 and WTe2. In contrast, lower temperatures (400 °C) were preferred for PtTe2, which becomes discontinuous and eventually decomposes above 650 °C. The presence of H2 in the tellurization process was critical to facilitate the formation of H2Te, which is known to be more reactive than Te vapor. In the absence of H2, neither MoTe2 nor WTe2 formed, and although PtTe2 was formed under pure N2, the crystal quality was significantly reduced. Temperature-dependent resistivity (ρ) measurements were performed on the best quality TMT films revealing all films to be highly conductive. MoTe2 showed metallic behavior up to 205 K where it underwent a phase transition from the semimetallic Td to semiconducting 1T′ phase. WTe2 exhibited a consistent semiconducting behavior with a small positive increase in ρ with decreasing temperature, and PtTe2 showed a metallic dependence from 10 K up to room temperature. Spectroscopic ellipsometry for TMT films provides complex optical constants n and k from ultraviolet to infrared.
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20

Tan, Yuan, Fang Luo, Mengjian Zhu, Xiaolong Xu, Yu Ye, Bing Li, Guang Wang, et al. "Controllable 2H-to-1T′ phase transition in few-layer MoTe2." Nanoscale 10, no. 42 (2018): 19964–71. http://dx.doi.org/10.1039/c8nr06115g.

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21

Chi, Zhen, Hailong Chen, Qing Zhao, and Yu-Xiang Weng. "Ultrafast carrier and phonon dynamics in few-layer 2H–MoTe2." Journal of Chemical Physics 151, no. 11 (September 21, 2019): 114704. http://dx.doi.org/10.1063/1.5115467.

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22

Vishwanath, Suresh, Aditya Sundar, Xinyu Liu, Angelica Azcatl, Edward Lochocki, Arthur R. Woll, Sergei Rouvimov, et al. "MBE growth of few-layer 2H-MoTe2 on 3D substrates." Journal of Crystal Growth 482 (January 2018): 61–69. http://dx.doi.org/10.1016/j.jcrysgro.2017.10.024.

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23

Bae, Geun Yeol, Jinsung Kim, Junyoung Kim, Siyoung Lee, and Eunho Lee. "MoTe2 Field-Effect Transistors with Low Contact Resistance through Phase Tuning by Laser Irradiation." Nanomaterials 11, no. 11 (October 22, 2021): 2805. http://dx.doi.org/10.3390/nano11112805.

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Анотація:
Due to their extraordinary electrical and physical properties, two-dimensional (2D) transition metal dichalcogenides (TMDs) are considered promising for use in next-generation electrical devices. However, the application of TMD-based devices is limited because of the Schottky barrier interface resulting from the absence of dangling bonds on the TMDs’ surface. Here, we introduce a facile phase-tuning approach for forming a homogenous interface between semiconducting hexagonal (2H) and semi-metallic monoclinic (1T′) molybdenum ditelluride (MoTe2). The formation of ohmic contacts increases the charge carrier mobility of MoTe2 field-effect transistor devices to 16.1 cm2 V−1s−1 with high reproducibility, while maintaining a high on/off current ratio by efficiently improving charge injection at the interface. The proposed method enables a simple fabrication process, local patterning, and large-area scaling for the creation of high-performance 2D electronic devices.
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24

Mortazavi, Bohayra, Golibjon R. Berdiyorov, Meysam Makaremi, and Timon Rabczuk. "Mechanical responses of two-dimensional MoTe2; pristine 2H, 1T and 1T′ and 1T′/2H heterostructure." Extreme Mechanics Letters 20 (April 2018): 65–72. http://dx.doi.org/10.1016/j.eml.2018.01.005.

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25

Grajcarova, Liliana, Michaela Riflikova, Roman Martonak, and Erio Tosatti. "Structural and electronic behaviour of MoS2, MoSe2and MoTe2at high pressure." Acta Crystallographica Section A Foundations and Advances 70, a1 (August 5, 2014): C1619. http://dx.doi.org/10.1107/s2053273314083806.

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Анотація:
Using ab initio calculations and metadynamics simulations we studied the behaviour of layered semiconducting transition metal dichalcogenides, MoX2 (X = S, Se, Te) at high pressure with focus on structural transitions and metallization [1,2]. We found that concerning structure, the behaviour of MoS2 is different from that of MoSe2 and MoTe2. In MoS2 pressure induces at 20 GPa a structural transition where layer sliding takes place, bringing the initial 2Hc stacking to a 2Ha stacking typical of e.g. 2H-NbSe2. This finding naturally explains previous X-ray diffraction and Raman spectroscopy data and was very recently confirmed by new X-ray diffraction experiments[3]. On the other hand, this transition does not occur in MoSe2 and MoTe2 where instead the initial 2Hc stacking remains stable. Besides structural changes pressure in MoS2 induces also a semiconductor - semimetal transition which takes place by band overlap and closing of indirect band gap. This electronic transition occurs in the same region where the structural transition takes place, at 25 GPa in the 2Hc phase and at 20 GPa in the 2Ha phase. In case of MoSe2 and MoTe2 a very similar electronic transition leading to semimetal is predicted to occur at 28 GPa and 13 GPa, respectively. All three materials exhibit after metallization a low density of states at the Fermi level implying low superconducting temperature (if any). Due to absence of structural transition in the metallization region MoSe2 and MoTe2 could be suitable candidate materials for observation of the excitonic insulator phase.
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26

Shafique, Aamir, and Young-Han Shin. "Strain engineering of phonon thermal transport properties in monolayer 2H-MoTe2." Physical Chemistry Chemical Physics 19, no. 47 (2017): 32072–78. http://dx.doi.org/10.1039/c7cp06065c.

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The effect of strain on the phonon properties such as phonon group velocity, phonon anharmonicity, phonon lifetime, and lattice thermal conductivity of monolayer 2H-MoTe2is studied by solving the Boltzmann transport equation based on first principles calculations.
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27

Pham, Trung T., Roshan Castelino, Alexandre Felten, and Robert Sporken. "Preparation of single phase 2H-MoTe2 films by molecular beam epitaxy." Applied Surface Science 523 (September 2020): 146428. http://dx.doi.org/10.1016/j.apsusc.2020.146428.

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28

Zhu, Hui, Qingxiao Wang, Chenxi Zhang, Rafik Addou, Kyeongjae Cho, Robert M. Wallace, and Moon J. Kim. "New Mo6 Te6 Sub-Nanometer-Diameter Nanowire Phase from 2H-MoTe2." Advanced Materials 29, no. 18 (March 10, 2017): 1606264. http://dx.doi.org/10.1002/adma.201606264.

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29

Yang, Zhe, Dayou Zhang, Jingwei Cai, Chuantao Gong, Qiang He, Ming Xu, Hao Tong, and Xiangshui Miao. "Joule heating induced non-melting phase transition and multi-level conductance in MoTe2 based phase change memory." Applied Physics Letters 121, no. 20 (November 14, 2022): 203508. http://dx.doi.org/10.1063/5.0127160.

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Анотація:
Phase change memory (PCM) is considered as a leading candidate for next generation data storage as well as emerging computing device, but the advancement has been hampered by high switching energy due to the melting process and amorphous relaxation induced large resistance drift. Polymorphic crystal-crystal transition without amorphization in metal dichalcogenides (TMDs) could be employed to solve these issues. Yet, the mechanism is still controversy. A melting-free PCM made of two dimensional (2D) MoTe2, which exhibits unipolar resistive switching (RS) and multi-level states with substantially reduced resistance drift via joule heating, is reported in this work. The device is first prepared based on the temperature dependence of Raman spectrum and electrical transport investigations on MoTe2 films. Significantly improved device performances on energy efficiency, switching speed, and memory window are further achieved by electrode size scaling down, indicating the key role of localized heating. Then, device scale transmission electron microscopy images reveal that the resistive switching stems from the transition between semiconducting 2H phase and metallic 1T′ phase. An entropy induced Te vacancies model is proposed to explain the reversible phase change mechanism in the MoTe2 based device. This study paves the way for further development of PCM based on atomically thin 2D TMDs, aiming for high density storage-class memory and high-precision neuromorphic computing.
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30

Empante, Thomas A., Yao Zhou, Velveth Klee, Ariana E. Nguyen, I.-Hsi Lu, Michael D. Valentin, Sepedeh A. Naghibi Alvillar, et al. "Chemical Vapor Deposition Growth of Few-Layer MoTe2 in the 2H, 1T′, and 1T Phases: Tunable Properties of MoTe2 Films." ACS Nano 11, no. 1 (January 3, 2017): 900–905. http://dx.doi.org/10.1021/acsnano.6b07499.

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31

Wang, Qingxiao, Hui Zhu, Chenxi Zhang, Rafik Addou, Kyeongjae Cho, Robert M. Wallace, and Moon J. Kim. "In Situ Heating Study of 2H-MoTe2 to Mo6Te6 Nanowire Phase Transition." Microscopy and Microanalysis 23, S1 (July 2017): 1764–65. http://dx.doi.org/10.1017/s1431927617009485.

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32

Yoo, Youngdong, Zachary P. DeGregorio, Yang Su, Steven J. Koester, and James E. Johns. "In-Plane 2H-1T′ MoTe2 Homojunctions Synthesized by Flux-Controlled Phase Engineering." Advanced Materials 29, no. 16 (February 21, 2017): 1605461. http://dx.doi.org/10.1002/adma.201605461.

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33

Mühlberg, Michaela. "Expression of concern: Controllable 2H-to-1T′ phase transition in few-layer MoTe2." Nanoscale 11, no. 40 (2019): 18900. http://dx.doi.org/10.1039/c9nr90216c.

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34

Sun, Yan, Junpei Zhang, Zongwei Ma, Cheng Chen, Junbo Han, Fangchu Chen, Xuan Luo, Yuping Sun, and Zhigao Sheng. "The Zeeman splitting of bulk 2H-MoTe2 single crystal in high magnetic field." Applied Physics Letters 110, no. 10 (March 6, 2017): 102102. http://dx.doi.org/10.1063/1.4977953.

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35

Shirpay, A., and M. M. Bagheri Mohagheghi. "Study of structural properties and J-V voltametric cyclic of MoTe2 binary thin films: Phase transition from MoO3-TeO2 to 2H-MoTe2." Materials Science and Engineering: B 272 (October 2021): 115351. http://dx.doi.org/10.1016/j.mseb.2021.115351.

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36

von Rohr, F. O., J. C. Orain, R. Khasanov, C. Witteveen, Z. Shermadini, A. Nikitin, J. Chang, et al. "Unconventional scaling of the superfluid density with the critical temperature in transition metal dichalcogenides." Science Advances 5, no. 11 (November 2019): eaav8465. http://dx.doi.org/10.1126/sciadv.aav8465.

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We report on muon spin rotation experiments probing the magnetic penetration depth λ(T) in the layered superconductors in 2H-NbSe2 and 4H-NbSe2. The current results, along with our earlier findings on 1T′-MoTe2 (Guguchia et al.), demonstrate that the superfluid density scales linearly with Tc in the three transition metal dichalcogenide superconductors. Upon increasing pressure, we observe a substantial increase of the superfluid density in 2H-NbSe2, which we find to correlate with Tc. The correlation deviates from the abovementioned linear trend. A similar deviation from the Uemura line was also observed in previous pressure studies of optimally doped cuprates. This correlation between the superfluid density and Tc is considered a hallmark feature of unconventional superconductivity. Here, we show that this correlation is an intrinsic property of the superconductivity in transition metal dichalcogenides, whereas the ratio Tc/TF is approximately a factor of 20 lower than the ratio observed in hole-doped cuprates. We, furthermore, find that the values of the superconducting gaps are insensitive to the suppression of the charge density wave state.
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37

Kim, TaeWan, Hyeji Park, DaeHwa Joung, DongHwan Kim, Rochelle Lee, Chae Ho Shin, Mangesh Diware, et al. "Wafer-Scale Epitaxial 1T′, 1T′-2H Mixed, and 2H Phases MoTe2 Thin Films Grown by Metal-Organic Chemical Vapor Deposition." Advanced Materials Interfaces 5, no. 15 (June 4, 2018): 1800439. http://dx.doi.org/10.1002/admi.201800439.

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38

Kim, Dong Min, Sang-il Kim, and TaeWan Kim. "Accurate Analysis of Schottky Barrier Height in Au/2H–MoTe2 Atomically Thin Film Contact." Electronic Materials Letters 17, no. 4 (April 4, 2021): 307–14. http://dx.doi.org/10.1007/s13391-021-00284-x.

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39

Yang, Shiqi, Xiaolong Xu, Wanjin Xu, Bo Han, Zhengping Ding, Pingfan Gu, Peng Gao, and Yu Ye. "Large-Scale Vertical 1T′/2H MoTe2 Nanosheet-Based Heterostructures for Low Contact Resistance Transistors." ACS Applied Nano Materials 3, no. 10 (September 11, 2020): 10411–17. http://dx.doi.org/10.1021/acsanm.0c02302.

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40

Shirpay, A., and M. M. Bagheri Mohagheghi. "Investigation of structural, optical and thermoelectric properties of 2H–MoTe2 and MoO3–TeO2 thin films." Physica B: Condensed Matter 587 (June 2020): 412141. http://dx.doi.org/10.1016/j.physb.2020.412141.

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41

Ding, Yao, Nan Zhou, Lin Gan, Xingxu Yan, Ruizhe Wu, Irfan H. Abidi, Aashir Waleed, et al. "Stacking-mode confined growth of 2H-MoTe2/MoS2 bilayer heterostructures for UV–vis–IR photodetectors." Nano Energy 49 (July 2018): 200–208. http://dx.doi.org/10.1016/j.nanoen.2018.04.055.

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42

Zhang, Xiang, Zehua Jin, Luqing Wang, Jordan A. Hachtel, Eduardo Villarreal, Zixing Wang, Teresa Ha, et al. "Low Contact Barrier in 2H/1T′ MoTe2 In-Plane Heterostructure Synthesized by Chemical Vapor Deposition." ACS Applied Materials & Interfaces 11, no. 13 (March 11, 2019): 12777–85. http://dx.doi.org/10.1021/acsami.9b00306.

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43

Tan, Yuan, Fang Luo, Mengjian Zhu, Xiaolong Xu, Yu Ye, Bing Li, Guang Wang, et al. "Correction and removal of expression of concern: Controllable 2H-to-1T′ phase transition in few-layer MoTe2." Nanoscale 11, no. 48 (2019): 23498–501. http://dx.doi.org/10.1039/c9nr90258a.

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44

Ogorzałek, Zuzanna, Bartłomiej Seredyński, Sławomir Kret, Adam Kwiatkowski, Krzysztof P. Korona, Magdalena Grzeszczyk, Janusz Mierzejewski, et al. "Charge transport in MBE-grown 2H-MoTe2 bilayers with enhanced stability provided by an AlOx capping layer." Nanoscale 12, no. 31 (2020): 16535–42. http://dx.doi.org/10.1039/d0nr03148h.

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The perfect structure of a 2H-MoTe2 bilayer in situ capped with an ultra-thin Al layer providing an excellent AlOx protection cap and long timescale stability when exposed to air and nitrogen atmospheres.
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45

Zhang, Cheng, Zhi Li, Min Zhang, Ziwei Li, Hao Sang, Sen Xie, Zhaohui Wang, et al. "High band degeneracy and weak chemical bonds leading to enhanced thermoelectric transport properties in 2H–MoTe2." Journal of Solid State Chemistry 300 (August 2021): 122227. http://dx.doi.org/10.1016/j.jssc.2021.122227.

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46

Das, Subhadip, Koyendrila Debnath, Biswanath Chakraborty, Anjali Singh, Shivani Grover, D. V. S. Muthu, U. V. Waghmare, and A. K. Sood. "Symmetry induced phonon renormalization in few layers of 2H-MoTe2 transistors: Raman and first-principles studies." Nanotechnology 32, no. 4 (October 29, 2020): 045202. http://dx.doi.org/10.1088/1361-6528/abbfd6.

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47

Bera, Achintya, Anjali Singh, Satyendra Nath Gupta, K. Glazyrin, D. V. S. Muthu, U. V. Waghmare, and A. K. Sood. "Pressure-induced isostructural electronic topological transitions in 2H-MoTe2: x-ray diffraction and first-principles study." Journal of Physics: Condensed Matter 33, no. 6 (November 10, 2020): 065402. http://dx.doi.org/10.1088/1361-648x/abaeac.

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48

Bera, Achintya, Anjali Singh, D. V. S. Muthu, U. V. Waghmare, and A. K. Sood. "Pressure-dependent semiconductor to semimetal and Lifshitz transitions in 2H-MoTe2: Raman and first-principles studies." Journal of Physics: Condensed Matter 29, no. 10 (February 1, 2017): 105403. http://dx.doi.org/10.1088/1361-648x/aa55a1.

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49

Kim, DongHwan, Rochelle Lee, Sung Kim, and TaeWan Kim. "Two-dimensional phase-engineered 1T′– and 2H–MoTe2-based near-infrared photodetectors with ultra-fast response." Journal of Alloys and Compounds 789 (June 2019): 960–65. http://dx.doi.org/10.1016/j.jallcom.2019.03.121.

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50

Hu, Xiangxiang, Feng Zhang, Zhiwan Hu, Pengfei He, Lili Tao, Zhaoqiang Zheng, Yu Zhao, Yibin Yang, and Junshan He. "Preparation of 1T′- and 2H–MoTe2 films and investigation of their photoelectric properties and ultrafast photocarrier dynamics." Optical Materials 136 (February 2023): 113467. http://dx.doi.org/10.1016/j.optmat.2023.113467.

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