Добірка наукової літератури з теми "2d-3d tcad"
Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями
Ознайомтеся зі списками актуальних статей, книг, дисертацій, тез та інших наукових джерел на тему "2d-3d tcad".
Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.
Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.
Статті в журналах з теми "2d-3d tcad"
IÑIGUEZ, BENJAMIN, ROMAIN RITZENTHALER, and FRANÇOIS LIME. "COMPACT MODELING OF DOUBLE AND TRI-GATE MOSFETs." International Journal of High Speed Electronics and Systems 22, no. 01 (November 2013): 1350004. http://dx.doi.org/10.1142/s0129156413500043.
Повний текст джерелаRahimo, Munaf T., Iulian Nistor, and David Green. "Advanced 1200V SiC MOSFET Concept Based on Singular Point Source MOS (S-MOS) Technology." Materials Science Forum 1062 (May 31, 2022): 539–43. http://dx.doi.org/10.4028/p-u88313.
Повний текст джерелаAguirre, P., M. Rau, and A. Schenk. "2D and 3D TCAD simulation of III-V channel FETs at the end of scaling." Solid-State Electronics 159 (September 2019): 123–28. http://dx.doi.org/10.1016/j.sse.2019.03.043.
Повний текст джерелаDash, T. P., S. Dey, S. Das, J. Jena, E. Mahapatra, and C. K. Maiti. "Source/Drain Stressor Design for Advanced Devices at 7 nm Technology Node." Nanoscience & Nanotechnology-Asia 10, no. 4 (August 26, 2020): 447–56. http://dx.doi.org/10.2174/2210681209666190809101307.
Повний текст джерелаMo, Fei, Xiaoran Mei, Takuya Saraya, Toshiro Hiramoto, and Masaharu Kobayashi. "A simulation study on memory characteristics of InGaZnO-channel ferroelectric FETs with 2D planar and 3D structures." Japanese Journal of Applied Physics 61, SC (February 9, 2022): SC1013. http://dx.doi.org/10.35848/1347-4065/ac3d0e.
Повний текст джерелаRahimo, Munaf, Iulian Nistor, and David Green. "Suppression of Short Channel Effects for a SiC MOSFET Based on the S-MOS Cell Concept." Key Engineering Materials 945 (May 19, 2023): 83–89. http://dx.doi.org/10.4028/p-g4w5h5.
Повний текст джерелаItalia, Markus, Ioannis Deretzis, Alfio Nastasi, Silvia Scalese, Antonino La Magna, Massimo Pirnaci, Daniele Pagano, Dario Tenaglia, and Patrizia Vasquez. "Multiscale Simulations of Plasma Etching in Silicon Carbide Structures." Materials Science Forum 1062 (May 31, 2022): 214–18. http://dx.doi.org/10.4028/p-n9v122.
Повний текст джерелаTripathi, Suman Lata. "Pocket Vertical Junction-Less U-Shape Tunnel FET and Its Challenges in Nano-Scale Regime." Advanced Science, Engineering and Medicine 11, no. 12 (December 1, 2019): 1225–30. http://dx.doi.org/10.1166/asem.2019.2466.
Повний текст джерелаAssiouras, P., P. Asenov, A. Kyriakis, and D. Loukas. "Fast calculation of capacitances in silicon sensors with 3D and 2D numerical solutions of the Laplace's equation and comparison with experimental data and TCAD simulations." Journal of Instrumentation 15, no. 11 (November 24, 2020): P11034. http://dx.doi.org/10.1088/1748-0221/15/11/p11034.
Повний текст джерелаSulaiman, Raed, Pradip De, Jennifer C. Aske, Xiaoqian Lin, Adam Dale, Kris Gaster, Luis Rojas Espaillat, David Starks, and Nandini Dey. "A CAF-Based Two-Cell Hybrid Co-Culture Model to Test Drug Resistance in Endometrial Cancers." Biomedicines 11, no. 5 (April 29, 2023): 1326. http://dx.doi.org/10.3390/biomedicines11051326.
Повний текст джерелаДисертації з теми "2d-3d tcad"
Bourgeat, Johan. "Etude du thyristor en technologies CMOS avancées pour implémentation dans des stratégies locale et globale de protection contre les décharges électrostatiques." Toulouse 3, 2011. http://thesesups.ups-tlse.fr/5671/.
Повний текст джерелаThe research work presented in this thesis addresses the issues related to the protection against electrostatic discharges (ESD) of integrated circuits in advanced technology nodes, CMOS45nm and CMOS32nm. The lithography dimension shrinking and the introduction of new technological process steps contribute to increase the ESD sensitivity. Excellent IC environment control together with the addition of dedicated protection circuits enable to decrease ESD failures. Thus, this research work consists to propose new protections based on the use of silicon controlled rectifier (SCR) devices. For that reason, a thorough study of the SCR behavior during ESD events has been carried out using three-dimensional TCAD simulations. This study enables the optimization of the main SCR parameters to improve its performance. To allow the SCR utilization as a local ESD protection with a power IO, a trigger circuit has been studied and firstly validated in CMOS45nm technology. Then, the trigger circuit optimization has been realized with SPICE simulations. The full protection has been developed in CMOS32nm and improved with bidirectional SCR (Triac). Finally, a new global protection strategy based on one network of three bidirectional SCRs, called "Beta-Matrix" has been investigated. A first study is focused on the development of its trigger circuit and a second one on the optimization of the "Beta-Matrix" topology. This protection strategy has been fully validated in CMOS32nm node
Postel-Pellerin, Jérémy. "Fiabilité des Mémoires Non-Volatiles de type Flash en architectures NOR et NAND." Phd thesis, Université de Provence - Aix-Marseille I, 2008. http://tel.archives-ouvertes.fr/tel-00370377.
Повний текст джерелаЧастини книг з теми "2d-3d tcad"
Wu, Yung-Chun, and Yi-Ruei Jhan. "2D MOSFET Simulation." In 3D TCAD Simulation for CMOS Nanoeletronic Devices, 19–90. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-3066-6_2.
Повний текст джерелаТези доповідей конференцій з теми "2d-3d tcad"
Kaid, Achraf, Fabrice Roqueta, Jean-Baptiste Kammerer, and Luc Hebrard. "Electro-thermal Modeling Method of Protection Power Diodes Using TCAD 3D / 2D approach." In 2019 25th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC). IEEE, 2019. http://dx.doi.org/10.1109/therminic.2019.8923815.
Повний текст джерелаPostel-Pellerin, J., F. Lalande, P. Canet, R. Bouchakour, F. Jeuland, B. Bertello, and B. Villard. "A full 2D and 3D TCAD simulation of ultimate 22nm NAND Flash memories." In 2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS 2009). IEEE, 2009. http://dx.doi.org/10.1109/nvmt.2009.5429787.
Повний текст джерелаAguirre, P., M. Rau, and A. Schenk. "2D and 3D TCAD simulation of III-V channel FETs at the end of scaling." In 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). IEEE, 2018. http://dx.doi.org/10.1109/ulis.2018.8354744.
Повний текст джерелаBenistant, F., M. Bazizi, L. Jiang, J. H. M. Tng, and M. H. J. Goh. "Full 3D process/device simulations re-using 2D TCAD knowledge for optimizing N and P-type FinFET transistors." In 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM). IEEE, 2014. http://dx.doi.org/10.1109/istdm.2014.6874650.
Повний текст джерелаMorabito, Caterina, Simone Guarnieri, Marika Berardini, Luisa Gesualdi, Francesca Ferranti, Anna Reale, Giulia Ricci, Angela Catizone, and Maria A. Mariggiò. "Microgravity-Induced Metabolic Response in 2D and 3D TCam-2 Cell Cultures." In Cells 2023. Basel Switzerland: MDPI, 2023. http://dx.doi.org/10.3390/blsf2023021007.
Повний текст джерела