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Добірка наукової літератури з теми "+219.688"

Автор: Grafiati

Опубліковано: 30 травня 2022

Оновлено: 31 травня 2022

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Статті в журналах з теми "+219.688"

Choi, Hoo Mi, Jang Ah Kim, Yu Jin Cho, Taeh Yun Hwang, Jon Woo Lee, and Tae Sung Kim. "Surface Cleaning of Graphene by CO₂ Cluster." Solid State Phenomena 219 (September 2014): 68–70. http://dx.doi.org/10.4028/www.scientific.net/ssp.219.68.

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Graphene has attracted researchers due to its unique physical properties [1]. However, residues on surface can act as contaminants which further have adverse effects on its performance. As synthetic graphene has inherent surface roughness which can also affect the weak adhesion of layers and leakage points. In order to improve the mechanical and electrical properties, the graphene surface should be uncontaminated. In general practice wet cleaning methods, containing hazardous chemical and solvents are used to remove the residues from graphene surface [2, 3]. To avoid chemicals, mechanical cleaning of graphene using contact mode atomic force microscopy (AFM) has been tried. However, the contact mode AFM cleaning is a limited in cleaning area and the cleaning procedure takes a long time. Recently, CO2 cluster cleaning shows benefits that overcomes these problems. Herein we report the use of CO2 cluster to clean the graphene surface without affecting its inherent properties for the first time. The CO2 cluster treated graphene samples were evaluated by AFM for its roughness change and residual contamination.

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Yu, Quan Mao. "The Synthesis and Morphology Control of High after-Grow Intensity SrAl₂O₄: Eu, Dy Phosphors." Applied Mechanics and Materials 217-219 (November 2012): 678–81. http://dx.doi.org/10.4028/www.scientific.net/amm.217-219.678.

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High after-grow intensity with controllable morphology SrAl2O4: Eu, Dy phosphors were synthesized by an innovative combustion-melted-salt-assistant-Sol-Gel (CMSASG) method, by using Oxides, Carbonate, Nitric acid, Polyethylene glycols and Urea as raw materials, Gel-forming at 100°C, Combustion under 450°C, Melted-salt-calcination at 1250°C. The luminescent intensity and after-grow intensity of the SrAl2O4: Eu, Dy phosphors with the suitable pair-dope synthesized by CMSASG method are higher than those of commercial samples. The size of the phosphor with excellent luminescent characteristics and shape of sphericity or near sphericity synthesized can be controlled from about 200 nm to 10 μm.

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Hwang, Chuan Chou, Chen Chia Chou, Jyh Liang Wang, Tsang Yen Hsieh, and Jui Te Tseng. "The Lithium Doping Effect on (Na_0.5K_0.5)NbO₃ Lead-Free Piezo-Ceramics Structure Stability and Ferroelectric Characteristics." Applied Mechanics and Materials 217-219 (November 2012): 682–85. http://dx.doi.org/10.4028/www.scientific.net/amm.217-219.682.

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The structure stability、micro-structure and electrical properties of lithium doping on potassium sodium niobate ceramics (Na0.5K0.5)NbO3 (NKN) were investigated in this study. Solid oxide mixing method with post calcination and sintering was employed to fabricate(Na0.5K0.5)(1-x) LixNbO3 ceramic. Lithium oxide was adopted as the sintering aids. For Li doping x=6 mol% in (Na0.5K0.5)(1-x) LixNbO3 ceramic a optimal crystallization and electrical properties could be achieved after 650°C calcination and 1060°C sintering. Ferroelectric properties of the lead-free ceramic behaved a coercive field of 12.5kV/cm and remanent polarization as high as 30uC/cm2.

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Sun, Nan Hai. "Efficiency Inorganic Thin Film Solar Cells with Flexible Substrate." Applied Mechanics and Materials 217-219 (November 2012): 686–89. http://dx.doi.org/10.4028/www.scientific.net/amm.217-219.686.

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The development of CdTe/CdS solar cells on flexible substrates is reviewed in this article. Photovoltaic structures on lightweight and flexible substrates have several advantages over the heavy glass based structures in both terrestrial and space applications. The cells mounted on flexible foil are not fragile, the requirements of the supporting structures are minimum and they can be wrapped onto any suitably oriented or curved structures. The specific power of the solar cells is an important factor in space applications and hence development of photovoltaic devices on light weight substrates is interesting. CdTe is one of the leading candidates for photovoltaic applications due to its optimum band gap for the efficient photo-conversion and robustness for industrial production with a variety of film preparation methods. Flexible solar cells with conversion efficiencies exceeding 11% have been developed on polyimide foils. The development of CdTe devices on metallic substrates is impeded due to the lack of a proper ohmic contact between CdTe and the substrate. The polymer substrate has the advantage that the devices can be prepared in both “superstrate” and “substrate” configurations.

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Nohara, Takahiko, Misao Ueda, Akira Ohta, and Toshitugu Sugimoto. "Correlation of Body Growth and Bone Mineral Density Measured by Ultrasound Densitometry of the Calcaneus in Children and Adolescents." Tohoku Journal of Experimental Medicine 219, no. 1 (2009): 63–69. http://dx.doi.org/10.1620/tjem.219.63.

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Shah, L. H., N. F. Zainal Ariffin, and Akhtar Razul Razali. "Parameter Optimization of AA6061-AA7075 Dissimilar Friction Stir Welding Using the Taguchi Method." Applied Mechanics and Materials 695 (November 2014): 20–23. http://dx.doi.org/10.4028/www.scientific.net/amm.695.20.

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In this study, the Taguchi method was utilized to determine the optimum process parameters for dissimilar friction stir welding between AA6061 and AA7075 aluminium alloys. The Taguchi L9 orthogonal array and optimization approach was applied on three levels of three critical factors, namely rotational speed, transverse speed and tool tilt angle. The optimum levels of process parameters were determined through the Taguchi parametric design approach. Through the parameter analysis, the predicted value of the dissimilar joint’s tensile strength was calculated to be 209.7 MPa, which is in close proximity to the experimental data (219.6 MPa) with 4.5% error. It can be concluded that a high tensile value of 219.6 MPa was achieved using 1000 rpm rotational speed, 110 mm/min travel speed and 3 ̊ tilt angle.

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Nikolaev, N. I., A. V. Shipulin, and K. S. Kupavikh. "Energy efficiency improvement of well development." St. Petersburg State Polytechnical University Journal 219, no. 2 (June 2015): 48–57. http://dx.doi.org/10.5862/jest.219.6.

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Paganelli, Gabriele. "Horn Binary Serialization Analysis." Electronic Proceedings in Theoretical Computer Science 219 (July 14, 2016): 56–68. http://dx.doi.org/10.4204/eptcs.219.6.

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Roure, Marie Christine, Sylvain Vialle, Mickaël Rebaud, Hervé Fontaine, and Pascal Besson. "Cross-Contamination Risk Evaluation during Fabrication of III-V Devices in a Silicon Processing Environment." Solid State Phenomena 219 (September 2014): 63–67. http://dx.doi.org/10.4028/www.scientific.net/ssp.219.63.

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III-V semiconductor compounds are increasingly studied for their interesting properties in the fields of microelectronics, optoelectronics, infrared detectors or solar cells. Firstly, they are promising candidates to replace silicon as a channel material. As CMOS scales beyond the 22 nm node it is widely expected that new higher mobility channel materials such as InxGa1-xAs will have to be introduced [1]. On the other hand, III-V materials have a direct bandgap making them useful for optoelectronic devices or high-efficiency multijunction photovoltaic cells. For these applications InP, GaAs and their alloys as InxGa1-xAs and GaxIn1-xP are investigated [2]. Depending on the targeted applications, several possible integration routes of III-V components could be considered: from 100 mm III-V substrates to III-V epitaxial layers grown on 300 mm silicon wafers as well as a few square centimetres chips bonded on 200 or 300 mm carrier wafers for photonics applications. In all cases, the manufacturing of devices requires a multitude of wet chemical steps including selective etching steps (from a few nanometres up to several microns) and cleaning steps (metallic or particles contamination removal).

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Shi, Xing Bo, Ju Lin Wang, and Xiao Ping Cai. "Effect of Low Molecular Weight Ethylene Homopolymer on Structure and Properties of Bimodal High Density Polyethylene." Applied Mechanics and Materials 217-219 (November 2012): 603–8. http://dx.doi.org/10.4028/www.scientific.net/amm.217-219.603.

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The effect of low molecular weight (LMW) ethylene homoploymer on the structure and properties of bimodal high density polyethylene (HDPE) was studied by blending two commercial bimodal HDPE resins (tandem reactor) with two types of LWM ethylene homopolymer. The molecule weight and molecule weight distribution, crystsallinity, rheological and mechanical properties of composites were characterized by high temperature gel permeation chromatography (HT-GPC), differential scanning calorimetry (DSC), capillary rheometer respectively. For composites of bimodal HDPE and LMW ethylene homopolymer, the polydispersity index (PDI) and crystallinity can be effectively increased when reduce the molecular weight of first reactor in tandem reactor. The viscosity of composites decreases at high shear rate. Increasing of LMW component has a positive effect on processing properties and tensile strength, while makes composites brittle.

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Дисертації з теми "+219.688"

Байбуз, Микола Андрійович. "Уточнений метод оцінювання імовірностей диференціалів немарковських AES – подібних шифрів". Master's thesis, Київ, 2018. https://ela.kpi.ua/handle/123456789/23502.

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Дипломну роботу виконано на 43 аркушах, вона містить 2 додатки та перелік посилань на використані джерела з 16 найменувань. У роботі наведено 3 рисунки та 4 таблиці. Метою даної дипломної роботи є аналiз, уточнення та застосування м є т о д ів дослідження марковських SP-мереж на с т ій к і с т ь до диференціального криптоаналізу. Обєктом дослідження є інформаційні процеси в системах криптографічного захисту. Предметом дослідження є алгоритми оцінювання SP-мереж на стійкість до диференціального криптоаналізу. В роботі проводиться уточнення та застосування методів для оцінки стійкості SP-мереж до диференціального криптоаналізу на прикладі шифру ДСТУ 7624:2014. Основні положення дипломної роботи опубліковано у вигляді тез доповіді на Міжнародній науково-практичній конференції БШ!ТС 2016 та Всеукраїнській науково-практичній коференції ТШПФМТ! 2016.
The thesis is presented in 43 pages. It contains 2 appendixes and bibliography of 16 references. Four figures and 2 tables are given in the thesis. The goal of the thesis is the analysis, specification and application of research methods Markov SP-networks for resistance to differential cryptanalysis. The object of research is the information processes in cryptographic protection systems. The subject of research is estimation of SP-networks algorithms for resistance to differential cryptanalysis. In the presented thesis the Markov SP-networks resistance to differential cryptoanalysis is assessed, taking the DSTU 7624:2014 cipher as the illustrative example. Main ideas of the thesis were published in the Proceedings of the International Practical and Technical Conference БГО!ТС 2016.
Дипломную работу выполнено на 43 листах, она содержит 2 приложения и перечень использованных источников из 16 наименований. В работе приведены 3 рисунки и 4 таблицы. Целью данной работы является анализ, уточнение и применение методов исследования марковских SP-сетей на устойчивость к дифференциальному криптоанализу. Объектом исследования являются процессы в системах криптографической защиты. Предметом исследования являются алгоритмы оценки SP-сетей на устойчивость к дифференциальному криптоанализу. В работе проводится уточнение и применение методов для оценки устойчивости SP-сетей к дифференциальному криптоанализу на примере шифра ДСТУ 7624:2014. Основные положения дипломной работы опубликованы в виде тезисов на Международной научно-практической конференции БИВИТС 2016 и Всеукраинской научно-практической коференции ТИППФМТИ 2016.

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Частини книг з теми "+219.688"

"Chapter One. The Monastery Of Bec And The Beginning Of A Career." In Teacher in Faith and Virtue, 3–34. BRILL, 2007. http://dx.doi.org/10.1163/ej.9789004163478.i-219.6.

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"[219.6] Apologetischer Epilogus zu dem vorstehenden Logogryphen und Räthsel." In Apparat, 947–50. De Gruyter, 2018. http://dx.doi.org/10.1515/9783110558203-082.

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Nagai, Akihiko, and Koji Tanabe. "The Role of Semiconductor Distributors in the Japanese Semiconductor Market." In E-Activity and Intelligent Web Construction, 111–18. IGI Global, 2011. http://dx.doi.org/10.4018/978-1-61520-871-5.ch010.

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Анотація:

In 2009, the global semiconductor market was worth $219.6 billion. Japan has the third largest semiconductor market at $38.3 billion, behind America and China. Japan has a unique semiconductor distribution system based on close relations between semiconductor distributors and major IDMs (integrated device manufacturers), electronics manufacturers, and automobile manufacturers. Because of this, it is difficult for overseas semiconductor manufacturers and fabless semiconductor companies to enter the market. Semiconductor distributors play a significant role in Japan’s semiconductor distribution system. The semiconductor market here has four main characteristics. These characteristics are the reason why Japan’s semiconductor distribution system has developed the way it has.

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