Добірка наукової літератури з теми "10T SRAM CELL"
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Статті в журналах з теми "10T SRAM CELL"
Elangovan, M., and K. Gunavathi. "High Stable and Low Power 10T CNTFET SRAM Cell." Journal of Circuits, Systems and Computers 29, no. 10 (December 19, 2019): 2050158. http://dx.doi.org/10.1142/s0218126620501583.
Повний текст джерелаReddy Gujjula, Nagarjuna, and Rameshbabu Kellampalli. "Design and implementation of 10T-SRAM cell using Carbon Nano Tube Field Effect Transistor." International Journal of Scientific Methods in Engineering and Management 01, no. 01 (2023): 47–57. http://dx.doi.org/10.58599/ijsmem.2023.1105.
Повний текст джерелаGanesh, Chokkakula, and Fazal Noorbasha. "Performance and Stability Analysis of Built-In Self-Read and Write Assist 10T SRAM Cell." Active and Passive Electronic Components 2023 (June 30, 2023): 1–17. http://dx.doi.org/10.1155/2023/3371599.
Повний текст джерелаRao, M. V. Nageswara, Mamidipaka Hema, Ramakrishna Raghutu, Ramakrishna S. S. Nuvvula, Polamarasetty P. Kumar, Ilhami Colak, and Baseem Khan. "Design and Development of Efficient SRAM Cell Based on FinFET for Low Power Memory Applications." Journal of Electrical and Computer Engineering 2023 (June 7, 2023): 1–13. http://dx.doi.org/10.1155/2023/7069746.
Повний текст джерелаIslam, A., and M. Hasan. "Leakage Characterization of 10T SRAM Cell." IEEE Transactions on Electron Devices 59, no. 3 (March 2012): 631–38. http://dx.doi.org/10.1109/ted.2011.2181387.
Повний текст джерелаChaurasia, Ranu, Brijesh Kumar, Sudhanshu Verma, and Akhilesh Kumar. "Design and Performance Improvement of 10T SRAM Using Sleepy Keeper and Drain Gating Techniques." IOP Conference Series: Materials Science and Engineering 1272, no. 1 (December 1, 2022): 012007. http://dx.doi.org/10.1088/1757-899x/1272/1/012007.
Повний текст джерелаLiu, Changjun, Hongxia Liu, and Jianye Yang. "A Novel Low-Power and Soft Error Recovery 10T SRAM Cell." Micromachines 14, no. 4 (April 13, 2023): 845. http://dx.doi.org/10.3390/mi14040845.
Повний текст джерелаZhou, Hong Gang, Qiang Song, Chun Yu Peng, and Shou Biao Tan. "A New 10T SRAM Cell with Improved Read/Write Margin and No Half Select Disturb for Bit-Interleaving Architecture." Applied Mechanics and Materials 263-266 (December 2012): 9–14. http://dx.doi.org/10.4028/www.scientific.net/amm.263-266.9.
Повний текст джерелаSingh, Arjun, and Sangeeta Nakhte. "Optimized High Performance 10T SRAM Cell Characterization." International Journal of Computer Applications 134, no. 5 (January 15, 2016): 29–33. http://dx.doi.org/10.5120/ijca2016907964.
Повний текст джерелаGupta, Neha, Ambika Prasad Shah, Sajid Khan, Santosh Kumar Vishvakarma, Michael Waltl, and Patrick Girard. "Error-Tolerant Reconfigurable VDD 10T SRAM Architecture for IoT Applications." Electronics 10, no. 14 (July 17, 2021): 1718. http://dx.doi.org/10.3390/electronics10141718.
Повний текст джерелаДисертації з теми "10T SRAM CELL"
Lo, Cheng-Hung, and 羅正鴻. "A PPN Based 10T Sub-threshold SRAM Cell with Low Leakage and Differential Sensing." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/39470329821328407138.
Повний текст джерела國立清華大學
電機工程學系
98
In this thesis, we propose a P-P-N inverter based differential 10T SRAM cell capable of providing low power operation. Since cell stability is especially vulnerable to noise at sub-threshold voltage, the proposed cell avoids read disturb, improving cell stability significantly. Without cell stability concern, we strengthen the access transistors to ensure cell writability by employing reverse short channel effect. As transistor leakage becomes more prominent in nanometer technology, we introduce VGND biasing scheme to reduce the impact of data-dependent leakage current. Without complicate wordline control, the proposed cell allows multi-word on a wordline to increase cell density and to enable efficient error correction code (ECC). To verify the proposed cell, a 16Kb array of the proposed cell is fabricated in 90nm CMOS technology. For comparison, we also fabricate 2Kb array of previous work in our chip. Supply voltage for array and peripheral is separated to enable periphery voltage boosting and to measure the cell array leakage. Applying higher peripheral voltage not only enhances the chip operating speed but also resolve the operating limitation at low voltage while the cell array still operates at lower voltage, reducing leakage power significantly. Measurement results show the 16Kb array of the proposed cell can work successfully down to 285mV. By boosting periphery voltage to 0.4V, the proposed cell can work at a lower (265mV) voltage and operate at a higher frequency. The entire 16Kb array consumes 2.6uW leakage power at 300mV. After normalization, our cell consumes only 0.2X leakage current compared to previous work.
YADAV, PUNEET. "DESIGN AND ANALYSIS OF A LOW POWER AND HIGH PERFORMANCE 10T SRAM CELL AT 32 NM TECHNOLOGY NODE." Thesis, 2023. http://dspace.dtu.ac.in:8080/jspui/handle/repository/19835.
Повний текст джерелаЧастини книг з теми "10T SRAM CELL"
Gupta, Vinay, Pratiksha Shukla, and Manisha Pattanaik. "Low Leakage Noise Tolerant 10T SRAM Cell." In Communications in Computer and Information Science, 538–50. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-13-5950-7_45.
Повний текст джерелаSharma, Deepika, Shilpi Birla, and Neha Mathur. "Comparative Analysis of 10T SRAM Cell using Nanodevices." In Intelligent Computing Techniques for Smart Energy Systems, 133–41. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-0252-9_13.
Повний текст джерелаManoj Kumar, R., and P. V. Sridevi. "Design of Low Standby Power 10T SRAM Cell with Improved Write Margin." In Lecture Notes in Electrical Engineering, 507–14. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-3828-5_53.
Повний текст джерелаSingh, Anushka, Yash Sharma, Arvind Sharma, and Archana Pandey. "A Novel 20nm FinFET Based 10T SRAM Cell Design for Improved Performance." In Communications in Computer and Information Science, 523–31. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-32-9767-8_43.
Повний текст джерелаAakansha, G. S. Namith, A. Dinesh, A. Sai Ram, Shashank Kumar Dubey, and Aminul Islam. "A Highly Reliable and Radiation-Hardened Majority PFET-Based 10T SRAM Cell." In Lecture Notes in Electrical Engineering, 113–22. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-16-1570-2_11.
Повний текст джерелаJoshi, Vinod Kumar, and Haniel Craig Lobo. "Comparative Study of 7T, 8T, 9T and 10T SRAM with Conventional 6T SRAM Cell Using 180 nm Technology." In Advanced Computing and Communication Technologies, 25–40. Singapore: Springer Singapore, 2016. http://dx.doi.org/10.1007/978-981-10-1023-1_3.
Повний текст джерелаSingh, Kamini, R. S. Gamad, and P. P. Bansod. "Design and Analysis for Power Reduction with High SNM of 10T SRAM Cell." In Communications in Computer and Information Science, 541–49. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-32-9767-8_45.
Повний текст джерелаYadav, Vaishali, and V. K. Tomar. "A Low Leakage with Enhanced Write Margin 10T SRAM Cell for IoT Applications." In Lecture Notes in Electrical Engineering, 201–11. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-16-3767-4_19.
Повний текст джерелаSwaati and Bishnu Prasad Das. "A 10T Subthreshold SRAM Cell with Minimal Bitline Switching for Ultra-Low Power Applications." In Communications in Computer and Information Science, 487–95. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-7470-7_48.
Повний текст джерелаAhlawat, Siddhant, Siddharth, Bhawna Rawat, and Poornima Mittal. "A Comparative Performance Analysis of Varied 10T SRAM Cell Topologies at 32 nm Technology Node." In Modeling, Simulation and Optimization, 63–75. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-0836-1_5.
Повний текст джерелаТези доповідей конференцій з теми "10T SRAM CELL"
Kaur, Navneet, Neha Gupta, Hitesh Pahuja, Balwinder Singh, and Sudhakar Panday. "Low Power FinFET based 10T SRAM cell." In 2016 Second International Innovative Applications of Computational Intelligence on Power, Energy and Controls with their Impact on Humanity (CIPECH). IEEE, 2016. http://dx.doi.org/10.1109/cipech.2016.7918772.
Повний текст джерелаPrasad, Govind. "Novel low power 10T SRAM cell on 90nm CMOS." In 2016 2nd International Conference on Advances in Electrical, Electronics, Information, Communication and Bio-Informatics (AEEICB). IEEE, 2016. http://dx.doi.org/10.1109/aeeicb.2016.7538408.
Повний текст джерелаBansal, Manav, Ankur Kumar, Priyanka Singh, and R. K. Nagaria. "A Novel 10T SRAM cell for Low Power Applications." In 2018 5th IEEE Uttar Pradesh Section International Conference on Electrical, Electronics and Computer Engineering (UPCON). IEEE, 2018. http://dx.doi.org/10.1109/upcon.2018.8596829.
Повний текст джерелаUpadhyay, Prashant, Rajib Kar, Durbadal Mandal, and Sakti P. Ghoshal. "A novel 10T SRAM cell for low power circuits." In 2014 International Conference on Communications and Signal Processing (ICCSP). IEEE, 2014. http://dx.doi.org/10.1109/iccsp.2014.6949770.
Повний текст джерелаMansore, S. R., and Amit Naik. "A Highly Stable 10T SRAM Cell for Low Power Applications." In 2022 OPJU International Technology Conference on Emerging Technologies for Sustainable Development (OTCON). IEEE, 2023. http://dx.doi.org/10.1109/otcon56053.2023.10113962.
Повний текст джерелаSharma, Deepika, and Shilpi Birla. "Design and Analysis of 10T SRAM Cell with Stability Characterizations." In 2021 International Conference on Advances in Electrical, Computing, Communication and Sustainable Technologies (ICAECT). IEEE, 2021. http://dx.doi.org/10.1109/icaect49130.2021.9392517.
Повний текст джерелаAhmad, Sayeed, Naushad Alam, and Mohd Hasan. "Radiation Hardened Area-Efficient 10T SRAM Cell for Space Applications." In 2021 25th International Symposium on VLSI Design and Test (VDAT). IEEE, 2021. http://dx.doi.org/10.1109/vdat53777.2021.9601130.
Повний текст джерелаGrace, P. Shiny, and N. M. Sivamangai. "Design of 10T SRAM cell for high SNM and low power." In 2016 3rd International Conference on Devices, Circuits and Systems (ICDCS). IEEE, 2016. http://dx.doi.org/10.1109/icdcsyst.2016.7570609.
Повний текст джерелаKumar, Mukku Pavan, Rohit Lorenzo, Junjurampalli Khaja, and Avtar Singh. "A Highly Stable PNN-PPN-10T SRAM Cell With Improved Reliability." In 2023 3rd International conference on Artificial Intelligence and Signal Processing (AISP). IEEE, 2023. http://dx.doi.org/10.1109/aisp57993.2023.10135013.
Повний текст джерелаZhang, Jiubai, Xiaoqing Wu, Xilin Yi, Jiaxun Lv, and Yajuan He. "A Subthreshold 10T SRAM Cell with Enhanced Read and Write Operations." In 2019 IEEE International Symposium on Circuits and Systems (ISCAS). IEEE, 2019. http://dx.doi.org/10.1109/iscas.2019.8702371.
Повний текст джерела