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Livros sobre o tema "Wind band gap Semiconductors"

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Autor: Grafiati

Publicado: 7 de julho de 2024

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1

1953-, Prelas Mark Antonio, North Atlantic Treaty Organization. Scientific Affairs Division. e NATO Advanced Research Workshop on Wide Band Gap Electronic Materials: Diamond, Aluminum Nitride, and Boron Nitride (1994 : Minsk, Belarus), eds. Wide band gap electronic materials. Dordrecht: Kluwer Academic Publishers, 1995.

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2

United States. National Aeronautics and Space Administration., ed. Further improvements in program to calculate electronic properties of narrow band gap materials: Final report. [Washington, DC: National Aeronautics and Space Administration, 1992.

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3

Yang, Fan. Electromagnetic band gap structures in antenna engineering. New York: Cambridge University Press, 2008.

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4

T͡Sidilʹkovskiĭ, I. M. Electron spectrum of gapless semiconductors. Berlin: Springer, 1997.

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5

Symposium L on Nitrides and Related Wide Band Gap Materials of the E-MRS (1998 Strasbourg, France). Nitrides and related wide band gap materials: Proceedings of Symposium L on Nitrides and Related Wide Band Gap Materials of the E-MRS 1998 Spring Conference, Strasbourg, France, June 16-19, 1998. Amsterdam: Elsevier, 1999.

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6

Yi-Gao, Sha, e United States. National Aeronautics and Space Administration., eds. Growth of wide band gap II-VI compound semiconductors by physical vapor transport. [Washington, DC: National Aeronautics and Space Administration, 1995.

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7

Yi-Gao, Sha, e United States. National Aeronautics and Space Administration., eds. Growth of wide band gap II-VI compound semiconductors by physical vapor transport. [Washington, DC: National Aeronautics and Space Administration, 1995.

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8

Trieste ICTP-IUPAP Semiconductor Symposium (7th 1992). Wide-band-gap semiconductors: Proceedings of the Seventh Trieste ICTP-IUPAP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 8-12 June 1992. Editado por Van de Walle, Chris Gilbert. Amsterdam: North-Holland, 1993.

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9

Symposium, L. on Nitrides and Related Wide Band Gap Materials (1998 Strasbourg France). Nitrides and related wide band gap materials: Proceedings of Symposium L on Nitrides and Related Wide Band Gap Materials of the E-MRS 1998 Spring Conference, Strasbourg, France 16-19 June 1998. Amsterdam: Elsevier, 1999.

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10

United States. National Aeronautics and Space Administration., ed. Bulk growth of wide band gap II-VI compound semiconductors by physical vapor transport. Bellingham, Wash: Society of Photo-Optical Instrumentation Engineers, 1997.

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11

Ėlektronnyĭ spektr besshchelevykh poluprovodnikov. Sverdlovsk: Akademii͡a nauk SSSR, Uralʹskoe otd-nie, 1991.

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12

Vernon, Stanley. Gallium arsenide-based ternary compounds and multi-band-gap solar cell research: Annual subcontract report, 15 April 1988-14 June 1990. Golden, Colo: National Renewable Energy Laboratory, 1993.

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13

1992), Trieste IUPAP-ICTP Semiconductor Symposium (7th. Wide-band-gap semiconductors: Proceedings of the seventh Trieste ICTP-IUPAP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 8-12 June 1992. Amsterdam: North Holland, 1993.

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14

Wide-Band-Gap Semiconductors. Elsevier, 1993. http://dx.doi.org/10.1016/c2009-0-10257-x.

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15

C. G. Van de Walle. Wide-Band-gap Semiconductors. Elsevier Science & Technology Books, 2012.

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16

Pearton, Stephen J. Processing of 'Wide Band Gap Semiconductors. Elsevier Science & Technology Books, 2000.

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17

Gupta, Tapan Kumar. Band gap narrowing in heavily doped silicon. 1988.

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18

Pearton, Stephen J. Processing of Wide Band Gap Semiconductors (Materials and Processing Technology). Noyes Publications, 2000.

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19

D, Moustakas T., Pankove Jacques I. 1922- e Hamakawa Yoshihiro 1932-, eds. Wide band gap semiconductors: Symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A. Pittsburgh, Pa: Materials Research Society, 1992.

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20

Morkoç, Hadis. Handbook of Nitride Semiconductors and Devices, Vol. 2: Electronic and Optical Processes in Wide Band Gap Semiconductors. Springer, 2007.

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21

Heterojunction band discontinuities: Physics and device applications. Amsterdam: North-Holland, 1987.

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22

Walle, Chris G. Van De. Wide-Band-Gap Semiconductors: Proceedings of the Seventh Trieste Ictp-Iupap Semiconductor Symposium : International Centre for Theoretical Physics T. North-Holland, 1993.

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23

Wang, Fei, Zheyu Zhang e Edward A. Jones. Characterization of Wide Bandgap Power Semiconductor Devices. Institution of Engineering & Technology, 2018.

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24

Characterization of Wide Bandgap Power Semiconductor Devices. Institution of Engineering & Technology, 2018.

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25

Advanced Technologies for Next Generation Integrated Circuits. Institution of Engineering & Technology, 2020.

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26

Basu, Prasanta Kumar, Bratati Mukhopadhyay e Rikmantra Basu. Semiconductor Nanophotonics. Oxford University PressOxford, 2022. http://dx.doi.org/10.1093/oso/9780198784692.001.0001.

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Resumo:

Abstract Nanometre sized structures made of semiconductors, insulators and metals and grown by modern growth technologies or by chemical synthesis exhibit novel electronic and optical phenomena due to confinement of electrons and photons. Strong interactions between electrons and photons in narrow regions lead to inhibited spontaneous emission, thresholdless laser operation, and Bose Einstein condensation of exciton-polaritons in microcavities. Generation of sub-wavelength radiation by surface Plasmon-polaritons at metal-semiconductor interfaces, creation of photonic band gap in dielectrics, and realization of nanometer sized semiconductor or insulator structures with negative permittivity and permeability, known as metamaterials, are further examples in the area of nanophotonics. The studies help develop Spasers and plasmonic nanolasers of subwavelength dimensions, paving the way to use plasmonics in future data centres and high speed computers working at THz bandwidth with less than a few fJ/bit dissipation. The present book intends to serveas a textbook for graduate students and researchers intending to have introductory ideas of semiconductor nanophotonics. It gives an introduction to electron-photon interactions in quantum wells, wires and dots and then discusses the processes in microcavities, photonic band gaps and metamaterials and related applications. The phenomena and device applications under strong light-matter interactions are discussed by mostly using classical and semi-classical theories. Numerous examples and problems accompany each chapter.

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