Literatura científica selecionada sobre o tema "Wind band gap Semiconductors"
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Artigos de revistas sobre o assunto "Wind band gap Semiconductors"
Rome, Grace, Fry Intia, Talysa Klein, Zebulon Schicht, Adele Tamboli, Emily L. Warren e Ann L. Greenaway. "Utilizing a Transparent Conductive Encapsulant to Protect Photoelectrodes during Solar Fuel Formation". ECS Meeting Abstracts MA2023-01, n.º 55 (28 de agosto de 2023): 2705. http://dx.doi.org/10.1149/ma2023-01552705mtgabs.
Texto completo da fonteWoods-Robinson, Rachel, Yanbing Han, Hanyu Zhang, Tursun Ablekim, Imran Khan, Kristin A. Persson e Andriy Zakutayev. "Wide Band Gap Chalcogenide Semiconductors". Chemical Reviews 120, n.º 9 (6 de abril de 2020): 4007–55. http://dx.doi.org/10.1021/acs.chemrev.9b00600.
Texto completo da fonteMedvid, Arthur, Igor Dmitruk, Pavels Onufrijevs e Iryna Pundyk. "Properties of Nanostructure Formed on SiO2/Si Interface by Laser Radiation". Solid State Phenomena 131-133 (outubro de 2007): 559–62. http://dx.doi.org/10.4028/www.scientific.net/ssp.131-133.559.
Texto completo da fonteLI, KEYAN, YANJU LI e DONGFENG XUE. "BAND GAP PREDICTION OF ALLOYED SEMICONDUCTORS". Functional Materials Letters 04, n.º 03 (setembro de 2011): 217–19. http://dx.doi.org/10.1142/s179360471100210x.
Texto completo da fonteNag, B. R. "Direct band-gap energy of semiconductors". Infrared Physics & Technology 36, n.º 5 (agosto de 1995): 831–35. http://dx.doi.org/10.1016/1350-4495(95)00023-r.
Texto completo da fonteKeßler, P., K. Lorenz e R. Vianden. "Implanted Impurities in Wide Band Gap Semiconductors". Defect and Diffusion Forum 311 (março de 2011): 167–79. http://dx.doi.org/10.4028/www.scientific.net/ddf.311.167.
Texto completo da fonteJin, Haiwei, Li Qin, Lan Zhang, Xinlin Zeng e Rui Yang. "Review of wide band-gap semiconductors technology". MATEC Web of Conferences 40 (2016): 01006. http://dx.doi.org/10.1051/matecconf/20164001006.
Texto completo da fonteWoods-Robinson, Rachel, Yanbing Han, Hanyu Zhang, Tursun Ablekim, Imran Khan, Kristin A. Persson e Andriy Zakutayev. "Correction to Wide Band Gap Chalcogenide Semiconductors". Chemical Reviews 120, n.º 15 (3 de agosto de 2020): 8035. http://dx.doi.org/10.1021/acs.chemrev.0c00643.
Texto completo da fonteCam, Hoang Ngoc, Nguyen Van Hieu e Nguyen Ai Viet. "Excitons in direct band gap cubic semiconductors". Annals of Physics 164, n.º 1 (outubro de 1985): 172–88. http://dx.doi.org/10.1016/0003-4916(85)90007-7.
Texto completo da fonteSalvatori, S. "Wide-band gap semiconductors for noncontact thermometry". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 19, n.º 1 (2001): 219. http://dx.doi.org/10.1116/1.1342007.
Texto completo da fonteTeses / dissertações sobre o assunto "Wind band gap Semiconductors"
Dorji, Chencho. "Etude des propriétés des isolants liquides pour l’encapsulation des substrats d’électronique de puissance". Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALT022.
Texto completo da fontePower modules based on wide band gap semiconductor has the potential to withstand high temperature (junction temperature >>200°C) and high voltage (blocking voltage of 10kV) contary to silicone based power module. However, silicone gel, the most commonly used encapsulant material in power modules cannot operatrate above 200°C. Moreover, electrical breakdown and partial discharge events results in permanent damage of the power module. In this work, we propose liquid dielectric as a potential encapsulant that may have better electrical and thermal performance than silicone gel. We did dielectric characterization of several potential liquids and developed field simulation model to study the electric field at triple point in power modules. Partial discharge measurements were made under AC and fast rise with different power electronic substrates embedded in liquid dielectrics. We also investigated the possibility of cooling power devices with EHD heat transfer enhancement and performed some supplementary experiments on thermal againg of liquids. The results indicated that liquids have potential to be used as encapsulant in power modules
Chan, Yung. "Optical functions of wide band gap semiconductors /". View the Table of Contents & Abstract, 2004. http://sunzi.lib.hku.hk/hkuto/record/B32021264.
Texto completo da fonteTirino, Louis. "Transport Properties of Wide Band Gap Semiconductors". Diss., Georgia Institute of Technology, 2004. http://hdl.handle.net/1853/5210.
Texto completo da fonteChan, Yung, e 陳勇. "Optical functions of wide band gap semiconductors". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2004. http://hub.hku.hk/bib/B45015338.
Texto completo da fonteSaadatkia, Pooneh. "Optoelectronic Properties of Wide Band Gap Semiconductors". Bowling Green State University / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1562379152593304.
Texto completo da fonteFarahmand, Maziar. "Advanced simulation of wide band gap semiconductor devices". Diss., Georgia Institute of Technology, 2000. http://hdl.handle.net/1853/14777.
Texto completo da fonteKusch, Gunnar. "Characterization of low conductivity wide band gap semiconductors". Thesis, University of Strathclyde, 2016. http://digitool.lib.strath.ac.uk:80/R/?func=dbin-jump-full&object_id=27392.
Texto completo da fonteMickevičius, Jūras. "Carrier recombination in wide-band-gap nitride semiconductors". Doctoral thesis, Lithuanian Academic Libraries Network (LABT), 2009. http://vddb.library.lt/obj/LT-eLABa-0001:E.02~2009~D_20091121_102304-00016.
Texto completo da fonteDisertacija skirta krūvininkų rekombinacijos tyrimams plačiatarpiuose nitridiniuose puslaidininkiuose bei jų dariniuose. Kompleksiniai eksperimentiniai tyrimai buvo atlikti naudojant kelias skirtingas metodikas. Atlikti krūvininkų dinamikos GaN sluoksniuose tyrimai labai žemų ir aukštų sužadinimų sąlygomis. Pasiūlytas naujas liuminescencijos gesimo kinetikų interpretavimo metodas, siejant liuminescencijos ir šviesa indukuotų dinaminių gardelių kinetikas. Naujas požiūris į geltonosios liuminescencijos juostą GaN sluoksniuose leido susieti geltonosios liuminescencijos intensyvumą su krūvininkų gyvavimo trukme. Skirtingomis technologijomis augintų AlGaN sluoksnių palyginimas suteikė informacijos apie juostos potencialo fliuktuacijas bei krūvininkų gyvavimo trukmę ribojančius veiksnius AlGaN medžiagose. Atskleista naujų krūvininkų dinamikos daugialakštėse AlGaN/AlGaN kvantinėse duobėse ypatumų – vidinio elektrinio lauko bei kvantinės duobės pločio fliuktuacijų sąlygotos lokalizacijos įtaka krūvininkų dinamikai. Dauguma tirtų bandinių buvo auginti naudojant MEMOCVDTM technologiją ir tyrimai patvirtino šios technologijos potencialą siekiant pagerinti medžiagų kokybę.
Bellotti, E. (Enrico). "Advanced modeling of wide band gap semiconductor materials and devices". Diss., Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/15354.
Texto completo da fonteLajn, Alexander. "Transparent rectifying contacts on wide-band gap oxide semiconductors". Doctoral thesis, Universitätsbibliothek Leipzig, 2013. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-102799.
Texto completo da fonteLivros sobre o assunto "Wind band gap Semiconductors"
1953-, Prelas Mark Antonio, North Atlantic Treaty Organization. Scientific Affairs Division. e NATO Advanced Research Workshop on Wide Band Gap Electronic Materials: Diamond, Aluminum Nitride, and Boron Nitride (1994 : Minsk, Belarus), eds. Wide band gap electronic materials. Dordrecht: Kluwer Academic Publishers, 1995.
Encontre o texto completo da fonteUnited States. National Aeronautics and Space Administration., ed. Further improvements in program to calculate electronic properties of narrow band gap materials: Final report. [Washington, DC: National Aeronautics and Space Administration, 1992.
Encontre o texto completo da fonteYang, Fan. Electromagnetic band gap structures in antenna engineering. New York: Cambridge University Press, 2008.
Encontre o texto completo da fonteT͡Sidilʹkovskiĭ, I. M. Electron spectrum of gapless semiconductors. Berlin: Springer, 1997.
Encontre o texto completo da fonteSymposium L on Nitrides and Related Wide Band Gap Materials of the E-MRS (1998 Strasbourg, France). Nitrides and related wide band gap materials: Proceedings of Symposium L on Nitrides and Related Wide Band Gap Materials of the E-MRS 1998 Spring Conference, Strasbourg, France, June 16-19, 1998. Amsterdam: Elsevier, 1999.
Encontre o texto completo da fonteYi-Gao, Sha, e United States. National Aeronautics and Space Administration., eds. Growth of wide band gap II-VI compound semiconductors by physical vapor transport. [Washington, DC: National Aeronautics and Space Administration, 1995.
Encontre o texto completo da fonteYi-Gao, Sha, e United States. National Aeronautics and Space Administration., eds. Growth of wide band gap II-VI compound semiconductors by physical vapor transport. [Washington, DC: National Aeronautics and Space Administration, 1995.
Encontre o texto completo da fonteTrieste ICTP-IUPAP Semiconductor Symposium (7th 1992). Wide-band-gap semiconductors: Proceedings of the Seventh Trieste ICTP-IUPAP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 8-12 June 1992. Editado por Van de Walle, Chris Gilbert. Amsterdam: North-Holland, 1993.
Encontre o texto completo da fonteSymposium, L. on Nitrides and Related Wide Band Gap Materials (1998 Strasbourg France). Nitrides and related wide band gap materials: Proceedings of Symposium L on Nitrides and Related Wide Band Gap Materials of the E-MRS 1998 Spring Conference, Strasbourg, France 16-19 June 1998. Amsterdam: Elsevier, 1999.
Encontre o texto completo da fonteUnited States. National Aeronautics and Space Administration., ed. Bulk growth of wide band gap II-VI compound semiconductors by physical vapor transport. Bellingham, Wash: Society of Photo-Optical Instrumentation Engineers, 1997.
Encontre o texto completo da fonteCapítulos de livros sobre o assunto "Wind band gap Semiconductors"
Ravichandran, K., S. Suvathi, P. Ravikumar e R. Mohan. "Wide Band Gap Semiconductors". In Handbook of Semiconductors, 40–53. Boca Raton: CRC Press, 2024. http://dx.doi.org/10.1201/9781003450146-4.
Texto completo da fonte"Copyright". In Wide-Band-Gap Semiconductors, iv. Elsevier, 1993. http://dx.doi.org/10.1016/b978-0-444-81573-6.50001-3.
Texto completo da fonte"Front Matter". In Wide-Band-Gap Semiconductors, v. Elsevier, 1993. http://dx.doi.org/10.1016/b978-0-444-81573-6.50002-5.
Texto completo da fonteFrova, A., e E. Tosatti. "Preface". In Wide-Band-Gap Semiconductors, vii—viii. Elsevier, 1993. http://dx.doi.org/10.1016/b978-0-444-81573-6.50003-7.
Texto completo da fonteVan de Walle, Chris G. "Introduction". In Wide-Band-Gap Semiconductors, ix—x. Elsevier, 1993. http://dx.doi.org/10.1016/b978-0-444-81573-6.50004-9.
Texto completo da fonteDavis, Robert F. "Thin films and devices of diamond, silicon carbide and gallium nitride". In Wide-Band-Gap Semiconductors, 1–15. Elsevier, 1993. http://dx.doi.org/10.1016/b978-0-444-81573-6.50005-0.
Texto completo da fonteNurmikko, Arto V., e Robert L. Gunshor. "Optical physics and laser devices in II–VI quantum confined heterostructures". In Wide-Band-Gap Semiconductors, 16–26. Elsevier, 1993. http://dx.doi.org/10.1016/b978-0-444-81573-6.50006-2.
Texto completo da fonteWalker, C. T., J. M. DePuydt, M. A. Haase, J. Qiu e H. Cheng. "Blue–green II–VI laser diodes". In Wide-Band-Gap Semiconductors, 27–35. Elsevier, 1993. http://dx.doi.org/10.1016/b978-0-444-81573-6.50007-4.
Texto completo da fonteMoustakas, T. D., T. Lei e R. J. Molnar. "Growth of GaN by ECR-assisted MBE". In Wide-Band-Gap Semiconductors, 36–49. Elsevier, 1993. http://dx.doi.org/10.1016/b978-0-444-81573-6.50008-6.
Texto completo da fonteYoshikawa, Akihiko. "Ar ion laser-assisted metalorganic vapor phase epitaxy of ZnSe". In Wide-Band-Gap Semiconductors, 50–64. Elsevier, 1993. http://dx.doi.org/10.1016/b978-0-444-81573-6.50009-8.
Texto completo da fonteTrabalhos de conferências sobre o assunto "Wind band gap Semiconductors"
Chambouleyron, I. "VARIABLE BAND-GAP AMORPHOUS SEMICONDUCTORS". In Proceedings of the International School on Crystal Growth and Characterization of Advanced Materials. WORLD SCIENTIFIC, 1988. http://dx.doi.org/10.1142/9789814541589_0023.
Texto completo da fonteSpirkoska, D., A. Efros, S. Conesa-Boj, J. R. Morante, J. Arbiol, A. Fontcuberta i Morral, G. Abstreiter, Jisoon Ihm e Hyeonsik Cheong. "Single Material Band Gap Engineering in GaAs Nanowires". In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666516.
Texto completo da fonteWilke, Ingrid. "Terahertz emission from narrow band gap semiconductors". In Optics East 2007, editado por Mehdi Anwar, Anthony J. DeMaria e Michael S. Shur. SPIE, 2007. http://dx.doi.org/10.1117/12.735101.
Texto completo da fonteTen, Sergey Y., Fritz Henneberger, Michael Rabe e Nasser Peyghambarian. "Exciton tunneling in wide-band-gap semiconductors". In Photonics West '96, editado por Weng W. Chow e Marek Osinski. SPIE, 1996. http://dx.doi.org/10.1117/12.238966.
Texto completo da fonteIshikawa, Masato, Takashi Nakayama, Jisoon Ihm e Hyeonsik Cheong. "Nitrogen-induced optical absorption spectra of InP and GaP: direct vs. indirect band-gap systems". In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666264.
Texto completo da fonteKuriyama, K., T. Ishikawa e K. Kushida. "Optical Band Gap and Bonding Character of Li3GaN2". In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2730466.
Texto completo da fonteDietl, Tomasz. "Spintronics And Ferromagnetism In Wide-Band-Gap Semiconductors". In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1993996.
Texto completo da fonteFeix, Gudrun. "Advanced packaging for wide band gap power semiconductors". In 2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D). IEEE, 2017. http://dx.doi.org/10.23919/ltb-3d.2017.7947427.
Texto completo da fonteKhurgin, Jacob B. "Band gap engineering for laser cooling of semiconductors". In Integrated Optoelectronic Devices 2006, editado por Marek Osinski, Fritz Henneberger e Yasuhiko Arakawa. SPIE, 2006. http://dx.doi.org/10.1117/12.644138.
Texto completo da fonteCyrille, Duchesne, Cussac Philippe e Chauffleur Xavier. "Interconnection technology for new wide band gap semiconductors". In 2013 15th European Conference on Power Electronics and Applications (EPE). IEEE, 2013. http://dx.doi.org/10.1109/epe.2013.6634619.
Texto completo da fonteRelatórios de organizações sobre o assunto "Wind band gap Semiconductors"
Edgar, James H. MOVPE Reactor for Deposition of Wide Band Gap Semiconductors. Fort Belvoir, VA: Defense Technical Information Center, abril de 2001. http://dx.doi.org/10.21236/ada393589.
Texto completo da fonteHommerich, Uwe. Optical Characterization of Rare Earth-doped Wide Band Gap Semiconductors. Fort Belvoir, VA: Defense Technical Information Center, agosto de 1999. http://dx.doi.org/10.21236/ada369833.
Texto completo da fonteKouvetakis, John. Synthesis, Characterization, Properties and Performance of Novel Direct Band Gap Semiconductors. Fort Belvoir, VA: Defense Technical Information Center, maio de 2007. http://dx.doi.org/10.21236/ada482288.
Texto completo da fonteCheng, Hung Hsiang. Development of Direct Band Gap Group IV Semiconductors with the Incorporation of Sn. Fort Belvoir, VA: Defense Technical Information Center, março de 2012. http://dx.doi.org/10.21236/ada558773.
Texto completo da fonte