Artigos de revistas sobre o tema "Wafer-Scale mapping"
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Veja os 35 melhores artigos de revistas para estudos sobre o assunto "Wafer-Scale mapping".
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Tajima, Michio, E. Higashi, Toshihiko Hayashi, Hiroyuki Kinoshita e Hiromu Shiomi. "Characterization of SiC Wafers by Photoluminescence Mapping". Materials Science Forum 527-529 (outubro de 2006): 711–16. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.711.
Texto completo da fonteMackenzie, David M. A., Kristoffer G. Kalhauge, Patrick R. Whelan, Frederik W. Østergaard, Iwona Pasternak, Wlodek Strupinski, Peter Bøggild, Peter U. Jepsen e Dirch H. Petersen. "Wafer-scale graphene quality assessment using micro four-point probe mapping". Nanotechnology 31, n.º 22 (13 de março de 2020): 225709. http://dx.doi.org/10.1088/1361-6528/ab7677.
Texto completo da fonteMiner, C. J. "Wafer-scale temperature mapping for molecular beam epitaxy and chemical beam epitaxy". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 11, n.º 3 (maio de 1993): 998. http://dx.doi.org/10.1116/1.586910.
Texto completo da fonteBuron, Jonas D., David M. A. Mackenzie, Dirch H. Petersen, Amaia Pesquera, Alba Centeno, Peter Bøggild, Amaia Zurutuza e Peter U. Jepsen. "Terahertz wafer-scale mobility mapping of graphene on insulating substrates without a gate". Optics Express 23, n.º 24 (16 de novembro de 2015): 30721. http://dx.doi.org/10.1364/oe.23.030721.
Texto completo da fonteCrovetto, Andrea, Patrick Rebsdorf Whelan, Ruizhi Wang, Miriam Galbiati, Stephan Hofmann e Luca Camilli. "Nondestructive Thickness Mapping of Wafer-Scale Hexagonal Boron Nitride Down to a Monolayer". ACS Applied Materials & Interfaces 10, n.º 30 (6 de julho de 2018): 25804–10. http://dx.doi.org/10.1021/acsami.8b08609.
Texto completo da fonteMeshot, Eric R., Sei Jin Park, Steven F. Buchsbaum, Melinda L. Jue, Tevye R. Kuykendall, Eric Schaible, Leonardus Bimo Bayu Aji, Sergei O. Kucheyev, Kuang Jen J. Wu e Francesco Fornasiero. "High-yield growth kinetics and spatial mapping of single-walled carbon nanotube forests at wafer scale". Carbon 159 (abril de 2020): 236–46. http://dx.doi.org/10.1016/j.carbon.2019.12.023.
Texto completo da fonteTian, Mengchuan, Ben Hu, Haifang Yang, Chengchun Tang, Mengfei Wang, Qingguo Gao, Xiong Xiong et al. "Wafer Scale Mapping and Statistical Analysis of Radio Frequency Characteristics in Highly Uniform CVD Graphene Transistors". Advanced Electronic Materials 5, n.º 4 (13 de fevereiro de 2019): 1800711. http://dx.doi.org/10.1002/aelm.201800711.
Texto completo da fonteYao, Yong Zhao, Yukari Ishikawa, Koji Sato, Yoshihiro Sugawara, Katsunori Danno, Hiroshi Suzuki e Takeshi Bessho. "Large-Area Mapping of Dislocations in 4H-SiC from Carbon-Face (000-1) by Using Vaporized KOH Etching near 1000 °C". Materials Science Forum 740-742 (janeiro de 2013): 829–32. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.829.
Texto completo da fonteShih, Po-Chou, Chun-Chin Hsu e Fang-Chih Tien. "Automatic Reclaimed Wafer Classification Using Deep Learning Neural Networks". Symmetry 12, n.º 5 (2 de maio de 2020): 705. http://dx.doi.org/10.3390/sym12050705.
Texto completo da fonteLang, Simon, Alexandra Schewski, Ignaz Eisele, Christoph Kutter e Wilfried Lerch. "(Best Paper Award) Aluminum Josephson Junction Formation on 200mm Wafers Using Different Oxidation Techniques". ECS Meeting Abstracts MA2023-01, n.º 29 (28 de agosto de 2023): 1791. http://dx.doi.org/10.1149/ma2023-01291791mtgabs.
Texto completo da fonteYates, Luke, Andrew T. Binder, Anthony Rice, Andrew M. Armstrong, Jeffrey Steinfeldt, Vincent M. Abate, Michael L. Smith et al. "(Invited) Recent Progress in Medium-Voltage Vertical GaN Power Devices". ECS Meeting Abstracts MA2023-02, n.º 35 (22 de dezembro de 2023): 1682. http://dx.doi.org/10.1149/ma2023-02351682mtgabs.
Texto completo da fonteYang, Dongxun, Jesse Henri Laarman e Masayoshi Tonouchi. "Sensitive Characterization of the Graphene Transferred onto Varied Si Wafer Surfaces via Terahertz Emission Spectroscopy and Microscopy (TES/LTEM)". Materials 17, n.º 7 (26 de março de 2024): 1497. http://dx.doi.org/10.3390/ma17071497.
Texto completo da fonteAbid, Poonam Sehrawat, Christian M. Julien e Saikh S. Islam. "Interface Kinetics Assisted Barrier Removal in Large Area 2D-WS2 Growth to Facilitate Mass Scale Device Production". Nanomaterials 11, n.º 1 (16 de janeiro de 2021): 220. http://dx.doi.org/10.3390/nano11010220.
Texto completo da fonteWadhwa, Riya, Sanjeev Thapa, Sonia Deswal, Pradeep Kumar e Mukesh Kumar. "Wafer-scale controlled growth of MoS2 by magnetron sputtering: from in-plane to inter-connected vertically-aligned flakes". Journal of Physics: Condensed Matter, 19 de janeiro de 2023. http://dx.doi.org/10.1088/1361-648x/acb4d1.
Texto completo da fonteChen, Fu Der, Ankita Sharma, David A. Roszko, Tianyuan Xue, Xin Mu, Xianshu Luo, Hongyao Chua, Patrick Guo-Qiang Lo, Wesley D. Sacher e Joyce Poon. "Development of wafer-scale multifunctional nanophotonic neural probes for brain activity mapping". Lab on a Chip, 2024. http://dx.doi.org/10.1039/d3lc00931a.
Texto completo da fonteLagowski, Jacek, e Piotr Edelman. "Non-Contact Mapping of Fe Contamination in Oxidized Si Wafers with Sensitivity in Part-Per-Trillion Range". MRS Proceedings 428 (1996). http://dx.doi.org/10.1557/proc-428-449.
Texto completo da fonteDinh, Khac Huy, Kevin Robert, Joelle Thuriot-Roukos, Marielle Huvé, Pardis Simon, David Troadec, Christophe Lethien e Pascal Roussel. "Wafer-Scale Performance Mapping of Magnetron-Sputtered Ternary Vanadium Tungsten Nitride for Microsupercapacitors". Chemistry of Materials, 13 de outubro de 2023. http://dx.doi.org/10.1021/acs.chemmater.3c01803.
Texto completo da fonteFaifer, Vladimir N., Michael I. Current, Wojtek Walecki, Vitali Souchkov, Georgy Mikhaylov, Phuc Van, Tim Wong et al. "Non-contact Electrical Measurements of Sheet Resistance and Leakage Current Density for Ultra-shallow (and other) Junctions". MRS Proceedings 810 (2004). http://dx.doi.org/10.1557/proc-810-c11.9.
Texto completo da fonteLee, Brian, Duane S. Boning, Winthrop Baylies, Noel Poduje e John Valley. "Modeling and Mapping of Nanotopography Interactions with CMP". MRS Proceedings 732 (2002). http://dx.doi.org/10.1557/proc-732-i1.5.
Texto completo da fonteEdelman, Piotr, Jacek Lagowski e Lubek Jastrzebski. "Surface Charge Imaging in Semiconductor Wafers by Surface Photovoltage (SPV)". MRS Proceedings 261 (1992). http://dx.doi.org/10.1557/proc-261-223.
Texto completo da fonteSu, Chanmin, Shuiqing Hu, Yan Hu, Natalia Erina e Andrea Slade. "Quantitative Mechanical Mapping of Biomolecules in Fluid". MRS Proceedings 1261 (2010). http://dx.doi.org/10.1557/proc-1261-u01-05.
Texto completo da fonteWhelan, Patrick R., Domenico De Fazio, Iwona Pasternak, Joachim D. Thomsen, Steffen Zelzer, Martin O. Mikkelsen, Timothy J. Booth et al. "Mapping nanoscale carrier confinement in polycrystalline graphene by terahertz spectroscopy". Scientific Reports 14, n.º 1 (7 de fevereiro de 2024). http://dx.doi.org/10.1038/s41598-024-51548-z.
Texto completo da fontePearton, S. J., K. M. Lee, N. M. Haegel, C. J. Huang, S. Nakahara, F. Ren, V. Scarpelli, K. T. Short e S. M. Vernon. "Material and Device Properties of 3” Diameter GaAs-on-Si with Buried P-type Layers". MRS Proceedings 144 (1988). http://dx.doi.org/10.1557/proc-144-317.
Texto completo da fonteZhuang, Qiuna, Kuanming Yao, Mengge Wu, Zhuogui Lei, Fan Chen, Jiyu Li, Quanjing Mei et al. "Wafer-patterned, permeable, and stretchable liquid metal microelectrodes for implantable bioelectronics with chronic biocompatibility". Science Advances 9, n.º 22 (2 de junho de 2023). http://dx.doi.org/10.1126/sciadv.adg8602.
Texto completo da fonteMarinskiy, D., J. Lagowski, M. Wilson, A. Savtchouk, L. Jastrzebski e D. DeBusk. "Small Signal AC-Surface Photovoltage Technique for Non-Contact Monitoring of Near Surface Doping and Recombination-Generation in the Depletion Layer". MRS Proceedings 591 (1999). http://dx.doi.org/10.1557/proc-591-225.
Texto completo da fonteFu, Wai Yuen, e Hoi Wai Choi. "Development of chipscale InGaN RGB displays using strain-relaxed nanosphere-defined nanopillars". Nanotechnology, 2 de abril de 2022. http://dx.doi.org/10.1088/1361-6528/ac6399.
Texto completo da fonteAlcer, David, Lukas Hrachowina, Dan Hessman e Magnus T. Borgström. "Processing and Characterization of Large Area InP Nanowire Photovoltaic Devices". Nanotechnology, 12 de abril de 2023. http://dx.doi.org/10.1088/1361-6528/accc37.
Texto completo da fonteChu, Jinn P., Yi-Jui Yeh, Chih-Yu Liu, Yi-Xiang Yang, Alfreda Krisna Altama, Ting-Hao Chang, Wei-Hung Chiang, Pakman Yiu e Kuo-Lun Tung. "Core-shell metallic nanotube arrays for highly sensitive surface-enhanced Raman scattering (SERS) detection". Journal of Vacuum Science & Technology A 41, n.º 6 (17 de outubro de 2023). http://dx.doi.org/10.1116/6.0003055.
Texto completo da fonteBiswas, Sujit K., Sandra B. Schujman, Robert Vajtai, Bingqing Wei, Allen Parker, Leo J. Schowalter e Pulickel M. Ajayan. "AFM-based Electrical Characterization of Nano-structures". MRS Proceedings 738 (2002). http://dx.doi.org/10.1557/proc-738-g9.2.
Texto completo da fonteBiswas, Sujit K., Sandra B. Schujman, Robert Vajtai, Bingqing Wei, Allen Parker, Leo J. Schowalter e Pulickel M. Ajayan. "AFM-based Electrical Characterization of Nano-structures". MRS Proceedings 761 (2002). http://dx.doi.org/10.1557/proc-761-nn6.2/g9.2.
Texto completo da fonteYama, Nicholas S., I‐Tung Chen, Srivatsa Chakravarthi, Bingzhao Li, Christian Pederson, Bethany E. Matthews, Steven R. Spurgeon et al. "Silicon‐Lattice‐Matched Boron‐Doped Gallium Phosphide: A Scalable Acousto‐Optic Platform". Advanced Materials, 3 de setembro de 2023. http://dx.doi.org/10.1002/adma.202305434.
Texto completo da fonteSnure, Michael, Eric W. Blanton, Vitali Soukhoveev, Timothy Vogt, Andrei Osinsky, Timothy Prusnick, W. Joshua Kennedy e Nicholas R. Glavin. "Spalling induced van der Waals lift-off and transfer of 4-in. GaN epitaxial films". Journal of Applied Physics 134, n.º 2 (14 de julho de 2023). http://dx.doi.org/10.1063/5.0153634.
Texto completo da fonteJi, Yihong, Martin Frentrup, Xiaotian Zhang, Jakub Pongrácz, Simon M. Fairclough, Yingjun Liu, Tongtong Zhu e Rachel A. Oliver. "Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation". Journal of Applied Physics 134, n.º 14 (10 de outubro de 2023). http://dx.doi.org/10.1063/5.0165066.
Texto completo da fonteLihachev, Grigory, Johann Riemensberger, Wenle Weng, Junqiu Liu, Hao Tian, Anat Siddharth, Viacheslav Snigirev et al. "Low-noise frequency-agile photonic integrated lasers for coherent ranging". Nature Communications 13, n.º 1 (20 de junho de 2022). http://dx.doi.org/10.1038/s41467-022-30911-6.
Texto completo da fonteWachtendorf, B., R. Beccard, D. Schmitz, H. Jürgensen, O. Schön, M. Heuken e E. Woelk. "Reliable, Reproducible and Efficient MOCVD of III-Nitrides in Production Scale Reactors". MRS Proceedings 468 (1997). http://dx.doi.org/10.1557/proc-468-7.
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