Literatura científica selecionada sobre o tema "Une mémoire PCM"
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Artigos de revistas sobre o assunto "Une mémoire PCM"
Peschanski, Denis. "Vichy au singulier, Vichy au pluriel. Une tentative avortée d'encadrement de la société (1941-1942)". Annales. Histoire, Sciences Sociales 43, n.º 3 (junho de 1988): 639–61. http://dx.doi.org/10.3406/ahess.1988.283511.
Texto completo da fonteBjelić, Nikola. "L’IMAGE DE LA SERBIE DANS L’usAgE Du MoNDE DE NICOLAS BOUVIER". Philologia Mediana 16, n.º 16 (6 de junho de 2024): 179–88. http://dx.doi.org/10.46630/phm.16.2024.11.
Texto completo da fonteGrumberg, Zoé. "Entre assignations et transgressions des identités de genre : les femmes du « secteur juif » du Parti communiste français après la Seconde Guerre mondiale". Revue d’histoire moderne & contemporaine 71, n.º 1 (12 de março de 2024): 15–40. http://dx.doi.org/10.3917/rhmc.711.0017.
Texto completo da fonteTeses / dissertações sobre o assunto "Une mémoire PCM"
Trabelsi, Ahmed. "Modulation des niveaux de résistance dans une mémoire PCM pour des applications neuromorphiques". Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALT027.
Texto completo da fonteThe exponential growth of data in recent years has led to a significant increase in energy consumption, creating a pressing need for innovative memory technologies to overcome the limitations of conventional solutions. This data deluge has resulted in a forecasted consumption surge in data centers, with an expected fourfold increase in data by 2025 compared to the present volume. To address this challenge, emerging memory technologies such as RRAM (Resistive RAM), PCM (Phase-Change Memory), and MRAM (Magnetoresistive RAM) are being developed to offer high density, fast access times, and non-volatility, thereby revolutionizing storage and memory solutions (Molas & Nowak, 2021).One promising technique to address the need for innovative memory technologies is the use of frequency modulation to modulate resistance in PCM which is a crucial aspect of its use in neuromorphic computing. PCM is a non-volatile memory technology based on the reversible phase transition between amorphous and crystalline phases of certain materials. The ability to alter conductance levels makes PCM well-suited for synaptic realizations in neuromorphic computing. The progressive crystallization of the phase-change material and the subsequent increase in device conductance enable PCM to be used in neuromorphic applications. Additionally, PCM-based memristor neural networks have been developed, and the resistance drift effect in PCM has been quantified, opening up new paths for the development of PCM-based memristor neuromorphic accelerators. Furthermore, frequency modulation has been identified as a promising technique to modulate resistance in PCM. This approach can be applied to PCM as well as RRAM, and it is expected to yield improved learning effects in more complex networks using multi-level cells (Wang et al., 2011). The primary aim of this thesis is to explore innovative methods for controlling resistance levels in PCM devices with a focus on their application in neuromorphic systems. The research involves a comprehensive understanding of the mechanisms underlying PCM devices and an identification of parameters that may influence the reliability of these devices. Additionally, the thesis aims to propose a novel approach to effectively modulate resistance levels in PCM devices, contributing to advancements in this field
Ranaivoniarivo, Manohiaina. "Modélisation, caractérisation et analyse de systèmes de PLL intégrés, utilisant une approche globale puce-boîtier-circuit imprimé". Thesis, Paris Est, 2011. http://www.theses.fr/2011PEST1045/document.
Texto completo da fonteThis thesis work focuses on characterization, modeling and analysis of «Pulling» and «Pushing» phenomena in Phase Locked Loops (PLL) based on a global approach where distributed effects of electromagnetic couplings at different integration levels (chip-level, assembly-level, board or PCB-level) are taken into account. The modeling approach adopts a hybrid methodology where the analysis of electromagnetic couplings combined with broadband equivalent circuit synthesis (compatible with library models of active components) is coupled with dynamic behavioral representations. The derived behavioral representations properly capture the effects of nonlinearities both at component scale (non-linear characteristic of varicap as function of control voltages) and at function block level (non-uniform gain KVCO of VCO circuits depending on frequency).The hybrid methodology renders possible the assessment of competitive effects resulting from «Pulling» and «Pushing» phenomena at chip level (influence of the PLL, effects of the power amplifier, power integrity, or ground reference distribution, etc..), and the distortions induced by components external to the chip at package and board levels (such as components on PCB: SAW filters, decoupling capacitors, matching networks).The proposed approach is used for the study and design of two types of circuits developed by NXP- Semiconductors, for applications related to automotive security and immobilization (an RF low power transceiver Integrated Circuit (PLL running around 1.763GHz), and to satellite receiver (PLL operating at low power for LNB circuits working at 9.75/10.6 GHz).The obtained modeling results are validated by correlation with experimental data and by comparison with different time-domain and frequency-domain simulation tools results (ADS-Harmonic Balance, ADS-Shooting solutions, Cadence-Spectre)