Artigos de revistas sobre o tema "TZM - SiC"
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Portelli, Marcus, Alessandro Bertarelli, Federico Carra, Michele Pasquali, Nicholas Sammut e Pierluigi Mollicone. "Numerical and experimental benchmarking of the dynamic response of SiC and TZM specimens in the MultiMat experiment". Mechanics of Materials 138 (novembro de 2019): 103169. http://dx.doi.org/10.1016/j.mechmat.2019.103169.
Texto completo da fonteNikzad Khangholi, Siamak, Mousa Javidani, Alexandre Maltais e X. Grant Chen. "Investigation on electrical conductivity and hardness of 6xxx aluminum conductor alloys with different Si levels". MATEC Web of Conferences 326 (2020): 08002. http://dx.doi.org/10.1051/matecconf/202032608002.
Texto completo da fonteLiu, R. J., L. M. Porter, M. J. Kim, R. W. Carpenter e R. F. Davis. "Microstructure of Cr-B Ohmic and Rectifying Contacts on (0001) 6H Sic". Microscopy and Microanalysis 3, S2 (agosto de 1997): 641–42. http://dx.doi.org/10.1017/s1431927600038484.
Texto completo da fonteLiu, R. J., L. M. Porter, M. J. Kim, R. W. Carpenter e R. F. Davis. "Microstructure of Cr-B Ohmic and Rectifying Contacts on (0001) 6H Sic". Microscopy and Microanalysis 3, S2 (agosto de 1997): 641–42. http://dx.doi.org/10.1017/s1431927600010096.
Texto completo da fontePark, K., e C. Sung. "Characterization of SiC fiber-reinforced SiC composites by TEM". Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 632–33. http://dx.doi.org/10.1017/s042482010017089x.
Texto completo da fonteAoki, Masahiko, Megumi Miyazaki, Taro Nishiguchi, Hiroyuki Kinoshita e Masahiro Yoshimoto. "TEM Observation of the Polytype Transformation of Bulk SiC Ingot". Materials Science Forum 600-603 (setembro de 2008): 365–68. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.365.
Texto completo da fonteWang, E. Y., X. Pan, J. P. Mansfield, T. Kennedy e S. Hampshire. "TEM Studies of Silicon Nitride-Silicon Carbide Nanocomposites". Microscopy and Microanalysis 3, S2 (agosto de 1997): 411–12. http://dx.doi.org/10.1017/s1431927600008941.
Texto completo da fonteBertrand, S., C. Droillard, R. Pailler, X. Bourrat e R. Naslain. "TEM structure of (PyC/SiC)n multilayered interphases in SiC/SiC composites". Journal of the European Ceramic Society 20, n.º 1 (janeiro de 2000): 1–13. http://dx.doi.org/10.1016/s0955-2219(99)00086-2.
Texto completo da fonteDiot, C., e V. Arnault. "Orientation Anisotropy in SiC Matrix of Unidirectional SiC/SiC Composite". Textures and Microstructures 14 (1991): 389–95. http://dx.doi.org/10.1155/tsm.14-18.389.
Texto completo da fonteNutt, S. R., e David J. Smith. "High-resolution TEM of thin-film β-SiC interfaces". Proceedings, annual meeting, Electron Microscopy Society of America 44 (agosto de 1986): 408–9. http://dx.doi.org/10.1017/s0424820100143638.
Texto completo da fonteCarter, C. H., J. E. Lane, J. Bentley e R. F. Davis. "Determination of creep mechanisms in various silicon carbides via TEM". Proceedings, annual meeting, Electron Microscopy Society of America 44 (agosto de 1986): 484–87. http://dx.doi.org/10.1017/s0424820100143973.
Texto completo da fonteMatsuhata, Hirofumi, Junji Senzaki, Ichiro Nagai e Hirotaka Yamaguchi. "TEM Observation of SiO2/4H-SiC Hetero Interface". Materials Science Forum 600-603 (setembro de 2008): 671–74. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.671.
Texto completo da fonteLiu, R. J., M. J. Kim, R. W. Carpenter, L. M. Porter, L. P. Scheunemann e R. F. Davis. "A TEM Study of Cr Based Contacts to (0001) 6H-SiC". Microscopy and Microanalysis 6, S2 (agosto de 2000): 1064–65. http://dx.doi.org/10.1017/s1431927600037818.
Texto completo da fonteMarinova, Maya, Alkyoni Mantzari, Milena Beshkova, Mikael Syväjärvi, Rositza Yakimova e Efstathios K. Polychroniadis. "TEM Investigation of the 3C/6H-SiC Transformation Interface in Layers Grown by Sublimation Epitaxy". Solid State Phenomena 163 (junho de 2010): 97–100. http://dx.doi.org/10.4028/www.scientific.net/ssp.163.97.
Texto completo da fontePerić Gavrančić, Sanja. "Sic etiam Croati". Povijesni prilozi 39, n.º 58 (2020): 7–28. http://dx.doi.org/10.22586/pp.v39i58.10115.
Texto completo da fonteBorysiuk, Jolanta, Wlodek Strupiński, Rafał Bożek, Andrzej Wysmolek e Jacek M. Baranowski. "TEM Investigations of Graphene on 4H-SiC(0001)". Materials Science Forum 615-617 (março de 2009): 207–10. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.207.
Texto completo da fontePlummer, H. K., S. E. Shinozaki, B. N. Juterbock e R. M. Williams. "TEM Observation of a Mechanically Thinned SiC Material". Proceedings, annual meeting, Electron Microscopy Society of America 43 (agosto de 1985): 232–33. http://dx.doi.org/10.1017/s0424820100118084.
Texto completo da fonteGkanatsiou, Alexandra, Christos B. Lioutas, Nikolaos Frangis, Narendraraj Chandraraj, Efstathios K. Polychroniadis, Pawel Prystawko e Mike Leszczynski. "TEM Study of AlGaN/GaN on Hexagonal SiC Substrates". Advanced Materials Research 936 (junho de 2014): 656–60. http://dx.doi.org/10.4028/www.scientific.net/amr.936.656.
Texto completo da fonteMarinova, Maya, Georgios Zoulis, Teddy Robert, Frédéric Mercier, Alkyoni Mantzari, Irina G. Galben-Sandulache, Olivier Kim-Hak et al. "TEM and LTPL Investigations of 3C-SiC Layers Grown by LPE on (100) and (111) 3C-SiC Seeds". Materials Science Forum 645-648 (abril de 2010): 383–86. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.383.
Texto completo da fonteKameda, Toshimasa, Atsuo Tomita, Takaaki Matsui e Toshiyuki Isshiki. "TEM Observation of Defect Structure of Low-Energy Ion Implanted SiC". Materials Science Forum 778-780 (fevereiro de 2014): 350–53. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.350.
Texto completo da fonteElizalde, M. R., E. Paris e J. Gil-Sevillano. "La intercara fibra-matriz de un compuesto CMC de SiC-SiC: Comparación de imágenes SEM, TEM y AFM". Revista de Metalurgia 34, Extra (30 de maio de 1998): 226–31. http://dx.doi.org/10.3989/revmetalm.1998.v34.iextra.743.
Texto completo da fonteSwiderska-Sroda, Anna, J. A. Kozubowski, A. Maranda-Niedbala, Ewa Grzanka, Bogdan F. Palosz, A. Presz, Stanislaw Gierlotka et al. "Investigation of the Microstructure of SiC-Zn Nanocomposites by Microscopic Methods: SEM, AFM and TEM". Solid State Phenomena 101-102 (janeiro de 2005): 151–56. http://dx.doi.org/10.4028/www.scientific.net/ssp.101-102.151.
Texto completo da fonteRossi, Francesca, Filippo Fabbri, Giovanni Attolini, Matteo Bosi, Bernard Enrico Watts e Giancarlo Salviati. "TEM and SEM-CL Studies of SiC Nanowires". Materials Science Forum 645-648 (abril de 2010): 387–90. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.387.
Texto completo da fonteRuterana, P., B. Beaumont, P. Gibart e Y. Melnik. "A TEM study of GaN grown by ELO on (0001) 6H-SiC". MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 76–82. http://dx.doi.org/10.1557/s1092578300004105.
Texto completo da fonteBorysiuk, Jolanta, Rafał Bożek, Wlodek Strupiński e Jacek M. Baranowski. "Graphene Growth on C and Si-Face of 4H-SiC – TEM and AFM Studies". Materials Science Forum 645-648 (abril de 2010): 577–80. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.577.
Texto completo da fonteLiu, J. Q., M. Skowronski, P. G. Neudeck e J. A. Powell. "TEM Observation on Single Defect in SiC". Microscopy and Microanalysis 8, S02 (agosto de 2002): 1180–81. http://dx.doi.org/10.1017/s143192760210777x.
Texto completo da fonteDanishevskii, A. M., M. V. Zamoryanskaya, A. A. Sitnikova, V. B. Shuman e A. A. Suvorova. "TEM and cathodoluminescence studies of porous SiC". Semiconductor Science and Technology 13, n.º 10 (1 de outubro de 1998): 1111–16. http://dx.doi.org/10.1088/0268-1242/13/10/010.
Texto completo da fonteAlani, R., e P. R. Swann. "TEM specimen preparation of individual SiC/C composite (SCS-6) fibers". Proceedings, annual meeting, Electron Microscopy Society of America 49 (agosto de 1991): 1104–5. http://dx.doi.org/10.1017/s0424820100089834.
Texto completo da fonteLee, B.-T., D.-K. Kim, C.-K. Moon, J. K. Kim, Y. H. Seo, K. S. Nahm, H. J. Lee et al. "Microstructural investigation of low temperature chemical vapor deposited 3C-SiC/Si thin films using single-source precursors". Journal of Materials Research 14, n.º 1 (janeiro de 1999): 24–28. http://dx.doi.org/10.1557/jmr.1999.0006.
Texto completo da fonteBow, J. S., F. Shaapur, M. J. Kim e R. W. Carpenter. "Preparation of thin-film-metal/6H-SiC TEM specimens by RPR ion milling". Proceedings, annual meeting, Electron Microscopy Society of America 51 (1 de agosto de 1993): 714–15. http://dx.doi.org/10.1017/s0424820100149404.
Texto completo da fonteMantzari, Alkyoni, Christos B. Lioutas e Efstathios K. Polychroniadis. "A TEM Study of Inversion Domain Boundaries Annihilation Mechanism in 3C-SiC during Growth". Materials Science Forum 615-617 (março de 2009): 331–34. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.331.
Texto completo da fonteYano, Toyohiko, Yoo Yamamoto e K. Yoshida. "TEM Investigation and Fracture Behavior of SiC/SiC Composites Fabricated by Hot-Pressing". Key Engineering Materials 166 (abril de 1999): 135–38. http://dx.doi.org/10.4028/www.scientific.net/kem.166.135.
Texto completo da fonteZhou, W. L., F. Namavar, P. C. Colter, M. Yoganathan, M. W. Leksono e J. I. Pankove. "Characterization of GaN Grown on SiC on Si/SiO2/Si by Metalorganic Chemical Vapor Deposition". Journal of Materials Research 14, n.º 4 (abril de 1999): 1171–74. http://dx.doi.org/10.1557/jmr.1999.0155.
Texto completo da fonteLebedev, Sergey P., Alexander A. Lebedev, Alla A. Sitnikova, Demid A. Kirilenko, Natasha V. Seredova, Alla S. Tregubova e Mikhail P. Scheglov. "Heteroepitaxial Growth of 3C-SiC on Polar Faces of 6H-SiC Substrates, TEM Investigations". Materials Science Forum 740-742 (janeiro de 2013): 267–70. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.267.
Texto completo da fonteGiannuzzi, L. A., C. A. Lewinsohn, C. E. Bakis e R. E. Tressler. "TEM of grain growth and phase transformations during creep of SCS-6 silicon carbide fibers". Proceedings, annual meeting, Electron Microscopy Society of America 53 (13 de agosto de 1995): 350–51. http://dx.doi.org/10.1017/s0424820100138129.
Texto completo da fonteCabibbo, Marcello. "Strengthening Evaluation in a Composite Mg-RE Alloy Using TEM". Materials Science Forum 678 (fevereiro de 2011): 75–84. http://dx.doi.org/10.4028/www.scientific.net/msf.678.75.
Texto completo da fonteBow, J. S., M. J. Kim e R. W. Carpenter. "Comparative Oxidation Studies of Polycrystalline HP and CVD Silicon Carbides by TEM". Proceedings, annual meeting, Electron Microscopy Society of America 49 (agosto de 1991): 938–39. http://dx.doi.org/10.1017/s0424820100089007.
Texto completo da fonteDas, G., e R. E. Omlor. "TEM characterization of reaction zone in a SiC fiber-reinforced titanium alloy". Proceedings, annual meeting, Electron Microscopy Society of America 46 (1988): 738–39. http://dx.doi.org/10.1017/s0424820100105758.
Texto completo da fonteBurke, M. G., M. N. Gungor e P. K. Liaw. "TEM examination of 2014-SiC metal matrix composite". Proceedings, annual meeting, Electron Microscopy Society of America 46 (1988): 726–27. http://dx.doi.org/10.1017/s0424820100105692.
Texto completo da fonteOlivier, E. J., e J. H. Neethling. "TEM analysis of planar defects in β-SiC". International Journal of Refractory Metals and Hard Materials 27, n.º 2 (março de 2009): 443–48. http://dx.doi.org/10.1016/j.ijrmhm.2008.09.013.
Texto completo da fontePirouz, P., e J. W. Yang. "Polytypic transformations in SiC: the role of TEM". Ultramicroscopy 51, n.º 1-4 (junho de 1993): 189–214. http://dx.doi.org/10.1016/0304-3991(93)90146-o.
Texto completo da fonteSitnikova, A. A., E. N. Mokhov e E. I. Radovanova. "TEM Investigation of Radiation Defects in SiC Crystals". Physica Status Solidi (a) 135, n.º 2 (16 de fevereiro de 1993): K45—K49. http://dx.doi.org/10.1002/pssa.2211350232.
Texto completo da fonteMore, K. L. "An investigation of ion beam and pulsed laser Ni-SiC mixed surface structures by cross-sectional TEM". Proceedings, annual meeting, Electron Microscopy Society of America 44 (agosto de 1986): 512–13. http://dx.doi.org/10.1017/s0424820100144073.
Texto completo da fonteYOON, HAN-KI, HO-JUN CHO, AKIRA KOHYAMA e TETSUJI NODA. "R&D OF SICF/SIC COMPOSITE FOR FUSION REACTOR MATERIAL". International Journal of Modern Physics B 25, n.º 31 (20 de dezembro de 2011): 4212–15. http://dx.doi.org/10.1142/s021797921106660x.
Texto completo da fonteShibayama, T., H. Takahashi, M. Kawasaki e A. Kohyama. "Interface structure analysis of SiC fibres reinforced SiC matrix composites by energy filtering TEM". Journal of Electron Microscopy 48, n.º 6 (1 de janeiro de 1999): 893–97. http://dx.doi.org/10.1093/oxfordjournals.jmicro.a023762.
Texto completo da fonteHusnayani, Ihda, e Muzakkiy Putra Muhammad Akhir. "COLLISION CASCADE AND PRIMARY RADIATION DAMAGE IN SILICON CARBIDE: A MOLECULAR DYNAMICS STUDY". JURNAL TEKNOLOGI REAKTOR NUKLIR TRI DASA MEGA 24, n.º 3 (9 de novembro de 2022): 131. http://dx.doi.org/10.17146/tdm.2022.24.3.6702.
Texto completo da fonteYasui, Kanji, T. Kurimoto, Masasuke Takata e Tadashi Akahane. "SiCOI Structure Fabricated by Hot-Mesh Chemical Vapor Deposition". Advanced Materials Research 11-12 (fevereiro de 2006): 257–60. http://dx.doi.org/10.4028/www.scientific.net/amr.11-12.257.
Texto completo da fonteChien, F. R., S. R. Nutt, W. S. Yoo, T. Kimoto e H. Matsunami. "Terrace growth and polytype development in epitaxial β-SiC films on α-SiC (6H and 15R) substrates". Journal of Materials Research 9, n.º 4 (abril de 1994): 940–54. http://dx.doi.org/10.1557/jmr.1994.0940.
Texto completo da fonteFang, J., H. M. Chan e M. P. Harmer. "TEM investigations of surface residual stress relaxation in A12O3 and Al2O3-SiC nanocomposite". Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 628–29. http://dx.doi.org/10.1017/s0424820100170876.
Texto completo da fonteGokhman, Aleksandr R., Andreas Ulbricht, Uwe Birkenheuer e Frank Bergner. "Cluster Dynamics Study of Neutron Irradiation Induced Defects in Fe-12.5at%Cr Alloy". Solid State Phenomena 172-174 (junho de 2011): 449–57. http://dx.doi.org/10.4028/www.scientific.net/ssp.172-174.449.
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