Artigos de revistas sobre o tema "Trench transistor"
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Shichijo, H., S. K. Banerjee, S. D. S. Malhi, G. P. Pollack, W. F. Richardson, D. M. Bordelon, R. H. Womack et al. "Trench transistor DRAM cell". IEEE Electron Device Letters 7, n.º 2 (fevereiro de 1986): 119–21. http://dx.doi.org/10.1109/edl.1986.26313.
Texto completo da fonteGupta, Aakashdeep, K. Nidhin, Suresh Balanethiram, Shon Yadav, Anjan Chakravorty, Sebastien Fregonese e Thomas Zimmer. "Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part I—Model Development". Electronics 9, n.º 9 (19 de agosto de 2020): 1333. http://dx.doi.org/10.3390/electronics9091333.
Texto completo da fonteBanerjee, S., e D. M. Bordelon. "A model for the trench transistor". IEEE Transactions on Electron Devices 34, n.º 12 (dezembro de 1987): 2485–92. http://dx.doi.org/10.1109/t-ed.1987.23339.
Texto completo da fonteMukherjee, Kalparupa, Carlo De Santi, Matteo Borga, Karen Geens, Shuzhen You, Benoit Bakeroot, Stefaan Decoutere et al. "Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization". Materials 14, n.º 9 (29 de abril de 2021): 2316. http://dx.doi.org/10.3390/ma14092316.
Texto completo da fonteDai, Tian Xiang, A. B. Renz, Luyang Zhang, Oliver J. Vavasour, G. W. C. Baker, Vishal Ajit Shah, Philip A. Mawby e Peter M. Gammon. "Design and Optimisation of Schottky Contact Integration in a 4H-SiC Trench MOSFET". Materials Science Forum 1004 (julho de 2020): 808–13. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.808.
Texto completo da fonteChen, Q., B. You, A. Q. Huang e J. K. O. Sin. "A new trench base-shielded bipolar transistor". IEEE Transactions on Electron Devices 47, n.º 8 (2000): 1662–66. http://dx.doi.org/10.1109/16.853045.
Texto completo da fonteWang, Bo. "Analysis of base characteristics of trench gate field termination IGBT". E3S Web of Conferences 237 (2021): 02023. http://dx.doi.org/10.1051/e3sconf/202123702023.
Texto completo da fonteManosukritkul, Phasapon, Amonrat Kerdpardist, Montree Saenlamool, Ekalak Chaowicharat, Amporn Poyai e Wisut Titiroongruang. "An Improvement of the Breakdown Voltage Characteristics of NPT-TIGBT by Using a P-Buried Layer". Advanced Materials Research 717 (julho de 2013): 158–63. http://dx.doi.org/10.4028/www.scientific.net/amr.717.158.
Texto completo da fonteYang, Ling Ling. "A Novel Structure Trench IGBT with Full Hole-Barrier Layer". Applied Mechanics and Materials 543-547 (março de 2014): 757–61. http://dx.doi.org/10.4028/www.scientific.net/amm.543-547.757.
Texto completo da fonteHung, Chia Lung, Yi Kai Hsiao, Chang Ching Tu e Hao Chung Kuo. "Investigation of 4H-SiC UMOSFET Architectures for High Voltage and High Speed Power Switching Applications". Materials Science Forum 1088 (18 de maio de 2023): 41–49. http://dx.doi.org/10.4028/p-56sbi2.
Texto completo da fonteShu, Lei, Huai-Lin Liao, Zi-Yuan Wu, Xing-Yu Fang, Shi-Wei Liang, Tong-De Li, Liang Wang, Jun Wang e Yuan-Fu Zhao. "Effects of Gamma Irradiation on Switching Characteristics of SiC MOSFET Power Devices of Different Structures". Electronics 12, n.º 10 (11 de maio de 2023): 2194. http://dx.doi.org/10.3390/electronics12102194.
Texto completo da fonteWang, Bo. "Analysis of junction capacitance characteristics of trench gate IGBT". E3S Web of Conferences 237 (2021): 02024. http://dx.doi.org/10.1051/e3sconf/202123702024.
Texto completo da fonteBanzhaf, Christian T., Michael Grieb, Achim Trautmann, Anton J. Bauer e Lothar Frey. "Investigation of Trenched and High Temperature Annealed 4H-SiC". Materials Science Forum 778-780 (fevereiro de 2014): 742–45. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.742.
Texto completo da fonteShah, A. H., C. Wang, R. H. Womack, J. D. Gallia, H. Shichijo, H. E. Davis, M. Elahy et al. "A 4-Mbit DRAM with trench-transistor cell". IEEE Journal of Solid-State Circuits 21, n.º 5 (outubro de 1986): 618–26. http://dx.doi.org/10.1109/jssc.1986.1052586.
Texto completo da fonteHuang, Q., e G. A. J. Amaratunga. "Analysis of double trench insulated gate bipolar transistor". Solid-State Electronics 38, n.º 4 (abril de 1995): 829–38. http://dx.doi.org/10.1016/0038-1101(94)00110-2.
Texto completo da fonteAur, S., e Ping Yang. "IVB-6 hot-carrier reliability of trench transistor". IEEE Transactions on Electron Devices 34, n.º 11 (novembro de 1987): 2374. http://dx.doi.org/10.1109/t-ed.1987.23289.
Texto completo da fonteBanerjee, S., D. Coleman, W. Richardson e A. Shah. "Leakage mechanisms in the trench transistor DRAM cell". IEEE Transactions on Electron Devices 35, n.º 1 (janeiro de 1988): 108–16. http://dx.doi.org/10.1109/16.2425.
Texto completo da fonteHueting, R. J. E., J. W. Slotboom, J. Melai, P. Agarwal e P. H. C. Magnee. "A New Trench Bipolar Transistor for RF Applications". IEEE Transactions on Electron Devices 51, n.º 7 (julho de 2004): 1108–13. http://dx.doi.org/10.1109/ted.2004.829867.
Texto completo da fonteKakarla, Bhagyalakshmi, Thomas Ziemann, Selamnesh Nida, Elias Doenni e Ulrike Grossner. "Planar to Trench: Short Circuit Capability Analysis of 1.2 kV SiC MOSFETs". Materials Science Forum 924 (junho de 2018): 782–85. http://dx.doi.org/10.4028/www.scientific.net/msf.924.782.
Texto completo da fonteSugiyama, Naohiro, Yuuichi Takeuchi, Mitsuhiro Kataoka, Adolf Schöner e Rajesh Kumar Malhan. "Growth Mechanism and 2D Aluminum Dopant Distribution of Embedded Trench 4H-SiC Region". Materials Science Forum 600-603 (setembro de 2008): 171–74. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.171.
Texto completo da fonteJiang, Dandan, Lei Jin e Zongliang Huo. "A Quantitative Approach to Characterize Total Ionizing Dose Effect of Periphery Device for 65 nm Flash Memory". Nanoscience and Nanotechnology Letters 10, n.º 3 (1 de março de 2018): 378–82. http://dx.doi.org/10.1166/nnl.2018.2604.
Texto completo da fonteZhang, Meng, Baikui Li, Zheyang Zheng, Xi Tang e Jin Wei. "A New SiC Planar-Gate IGBT for Injection Enhancement Effect and Low Oxide Field". Energies 14, n.º 1 (25 de dezembro de 2020): 82. http://dx.doi.org/10.3390/en14010082.
Texto completo da fonteSon, Won-So, Young-Ho Sohn e Sie-young Choi. "SOI RESURF LDMOS transistor using trench filled with oxide". Electronics Letters 39, n.º 24 (2003): 1760. http://dx.doi.org/10.1049/el:20031115.
Texto completo da fonteCai, J., J. K. O. Sin, P. K. T. Mok, Wai-Tung Ng e P. P. T. Lai. "A new lateral trench-gate conductivity modulated power transistor". IEEE Transactions on Electron Devices 46, n.º 8 (1999): 1788–93. http://dx.doi.org/10.1109/16.777171.
Texto completo da fonteSpulber, O., M. Sweet, K. Vershinin, C. K. Ngw, L. Ngwendson, J. V. S. C. Bose, M. M. De Souza e E. M. Sanakara Narayanan. "A novel trench clustered insulated gate bipolar transistor (TCIGBT)". IEEE Electron Device Letters 21, n.º 12 (dezembro de 2000): 613–15. http://dx.doi.org/10.1109/55.887483.
Texto completo da fonteNa, Jaeyeop, Jinhee Cheon e Kwangsoo Kim. "4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics". Materials 14, n.º 13 (25 de junho de 2021): 3554. http://dx.doi.org/10.3390/ma14133554.
Texto completo da fonteLi, Xuan, Xing Tong, Alex Q. Huang, Shi Qiu, Xu She, Xiao Сhuan Deng e Bo Zhang. "Shielded Gate SiC Trench Power MOSFET with Ultra-Low Switching Loss". Materials Science Forum 924 (junho de 2018): 765–69. http://dx.doi.org/10.4028/www.scientific.net/msf.924.765.
Texto completo da fonteShu, Lei, Huai-Lin Liao, Zi-Yuan Wu, Yan-Yan Li, Xing-Yu Fang, Shi-Wei Liang, Tong-De Li, Liang Wang, Jun Wang e Yuan-Fu Zhao. "Comparison of Gamma Irradiation Effects on Short Circuit Characteristics of SiC MOSFET Power Devices between Planar and Trench Structures". Electronics 12, n.º 13 (30 de junho de 2023): 2891. http://dx.doi.org/10.3390/electronics12132891.
Texto completo da fonteTakeuchi, Wakana, Eiji Kagoshima, Kazushi Sumitani, Yasuhiko Imai, Shigehisa Shibayama, Mitsuo Sakashita, Shigeru Kimura et al. "Visualization of local strain in 4H-SiC trench metal-oxide-semiconductor field-effect transistor using synchrotron nanobeam X-ray diffraction". Japanese Journal of Applied Physics 61, SC (21 de março de 2022): SC1072. http://dx.doi.org/10.35848/1347-4065/ac4c6d.
Texto completo da fonteZhou, Xuanze, Yongjian Ma, Guangwei Xu, Qi Liu, Jinyang Liu, Qiming He, Xiaolong Zhao e Shibing Long. "Enhancement-mode β-Ga2O3 U-shaped gate trench vertical MOSFET realized by oxygen annealing". Applied Physics Letters 121, n.º 22 (28 de novembro de 2022): 223501. http://dx.doi.org/10.1063/5.0130292.
Texto completo da fonteNa, Jaeyeop, Jinhee Cheon e Kwangsoo Kim. "High performance 4H-SiC MOSFET with deep source trench". Semiconductor Science and Technology 37, n.º 4 (17 de fevereiro de 2022): 045004. http://dx.doi.org/10.1088/1361-6641/ac5103.
Texto completo da fonteJeong, Jee-Hun, Ju-Hong Cha, Goon-Ho Kim, Sung-Hwan Cho e Ho-Jun Lee. "Study of a SiC Trench MOSFET Edge-Termination Structure with a Bottom Protection Well for a High Breakdown Voltage". Applied Sciences 10, n.º 3 (21 de janeiro de 2020): 753. http://dx.doi.org/10.3390/app10030753.
Texto completo da fonteZhang, Meng, Baikui Li e Jin Wei. "Exploring SiC Planar IGBTs towards Enhanced Conductivity Modulation Comparable to SiC Trench IGBTs". Crystals 10, n.º 5 (23 de maio de 2020): 417. http://dx.doi.org/10.3390/cryst10050417.
Texto completo da fonteYang, Jianan, John P. Denton e Gerold W. Neudeck. "Edge transistor elimination in oxide trench isolated N-channel metal–oxide–semiconductor field effect transistors". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 19, n.º 2 (2001): 327. http://dx.doi.org/10.1116/1.1358854.
Texto completo da fonteQian, Zhehong, Wenrong Cui, Tianyang Feng, Hang Xu, Yafen Yang, Qingqing Sun e David Wei Zhang. "A Novel High-Speed Split-Gate Trench Carrier-Stored Trench-Gate Bipolar Transistor with Enhanced Short-Circuit Roughness". Micromachines 15, n.º 6 (22 de maio de 2024): 680. http://dx.doi.org/10.3390/mi15060680.
Texto completo da fonteZeng, J., P. A. Mawby, M. S. Towers e K. Board. "THERMO‐ELECTRIC STUDY OF THE TRENCH‐GATE POWER VDMOS TRANSISTOR". COMPEL - The international journal for computation and mathematics in electrical and electronic engineering 13, n.º 4 (abril de 1994): 735–42. http://dx.doi.org/10.1108/eb051891.
Texto completo da fonteRongyao, Ma, Li Zehong, Hong Xin e Zhang Bo. "Carrier stored trench-gate bipolar transistor with p-floating layer". Journal of Semiconductors 31, n.º 2 (fevereiro de 2010): 024004. http://dx.doi.org/10.1088/1674-4926/31/2/024004.
Texto completo da fonteHieda, K., F. Horiguchi, H. Watanabe, K. Sunouchi, I. Inoue e T. Hamamoto. "Effects of a new trench-isolated transistor using sidewall gates". IEEE Transactions on Electron Devices 36, n.º 9 (setembro de 1989): 1615–19. http://dx.doi.org/10.1109/16.34221.
Texto completo da fonteMa, Rongyao, Ruoyu Wang, Hao Fang, Ping Li, Longjie Zhao, Hao Wu, Zhiyong Huang, Jingyu Tao e Shengdong Hu. "A Novel Deep-Trench Super-Junction SiC MOSFET with Improved Specific On-Resistance". Micromachines 15, n.º 6 (23 de maio de 2024): 684. http://dx.doi.org/10.3390/mi15060684.
Texto completo da fonteAkiyama, Satoru, Haruka Shimizu, Natsuki Yokoyama, Tomohiro Tamaki, Sadayuki Koido, Yoshikazu Tomizawa, Toyohiko Takahashi e Takamitsu Kanazawa. "A 69-mΩ 600-V-Class Hybrid JFET". Materials Science Forum 740-742 (janeiro de 2013): 925–28. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.925.
Texto completo da fonteWu, Jiale, Houyong Zhou e Yi Chen. "A Novel Super-junction MOSFET with Enhanced Switching Performance and Ruggedness". Journal of Physics: Conference Series 2524, n.º 1 (1 de junho de 2023): 012028. http://dx.doi.org/10.1088/1742-6596/2524/1/012028.
Texto completo da fonteMaralani, A., Michael S. Mazzola, David C. Sheridan, Igor Sankin e Volodymyr Bondarenko. "Characterization and Modeling of SiC LTJFET for Analog Integrated Circuit Simulation and Design". Materials Science Forum 615-617 (março de 2009): 915–18. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.915.
Texto completo da fonteYahata, Akihiro, Satoshi Urano, Tomoki Inoue e Takashi Shinohe. "Improvement of Channel Mobility for Trench Metal-Oxide-Semiconductor Field Effect Transistor by Smoothing Trench Sidewall Surface". Japanese Journal of Applied Physics 40, Part 1, No. 1 (15 de janeiro de 2001): 116–17. http://dx.doi.org/10.1143/jjap.40.116.
Texto completo da fonteNi, Wei, Kenta Emori, Toshiharu Marui, Yuji Saito, Shigeharu Yamagami, Tetsuya Hayashi e Masakatsu Hoshi. "SiC Trench MOSFET with an Integrated Low Von Unipolar Heterojunction Diode". Materials Science Forum 778-780 (fevereiro de 2014): 923–26. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.923.
Texto completo da fonteChong, Chen, Hongxia Liu, Shougang Du, Shulong Wang e Hao Zhang. "Study on the Simulation of Biosensors Based on Stacked Source Trench Gate TFET". Nanomaterials 13, n.º 3 (28 de janeiro de 2023): 531. http://dx.doi.org/10.3390/nano13030531.
Texto completo da fonteLee, Hoontaek, Junsoo Kim, Kumjae Shin e Wonkyu Moon. "Improving the Performance of the ToGoFET Probe: Advances in Design, Fabrication, and Signal Processing". Micromachines 12, n.º 11 (23 de outubro de 2021): 1303. http://dx.doi.org/10.3390/mi12111303.
Texto completo da fonteVolcheck, V. S., e V. R. Stempitsky. "Gallium nitride heterostructure field-effect transistor with a heat-removal system based on a trench in the passivation layer filled by a high thermal conductivity material". Doklady BGUIR 19, n.º 6 (1 de outubro de 2021): 74–82. http://dx.doi.org/10.35596/1729-7648-2021-19-6-74-82.
Texto completo da fonteVolcheck, V. S., e V. R. Stempitsky. "Large Signal Performance of the Gallium Nitride Heterostructure Field-Effect Transistor With a Graphene Heat-Removal System". Doklady BGUIR 20, n.º 1 (1 de março de 2022): 40–47. http://dx.doi.org/10.35596/1729-7648-2022-20-1-40-47.
Texto completo da fonteBellini, Marco, e Lars Knoll. "Advanced TCAD Design Techniques for the Performance Improvement of SiC MOSFETs". Materials Science Forum 1004 (julho de 2020): 865–71. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.865.
Texto completo da fonteDeng, Xiao Chuan, Hao Zhu, Xuan Li, Xiao Jie Xu, Kun Zhou, Zhi Qiang Li, Song Bai, You Run Zhang e Bo Zhang. "Avalanche Ruggedness Assessment of 1.2kV 45mΩ Asymmetric Trench SiC MOSFETs". Materials Science Forum 1004 (julho de 2020): 837–42. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.837.
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