Literatura científica selecionada sobre o tema "Technologie III-V"
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Artigos de revistas sobre o assunto "Technologie III-V"
Perret, C., C. Lallement e A. Belleville. "Le Moulinet d'hydrométrie à axe horizontal à travers l'expérience française. Quel avenir pour cette technique ?" La Houille Blanche, n.º 5-6 (outubro de 2018): 75–86. http://dx.doi.org/10.1051/lhb/2018054.
Texto completo da fonteČULÍK, J., V. KELLNER, B. ŠPINAR, J. PROKEŠ e G. BASAŘOVÁ. "Volatile N-nitrosamines in malt. III. Effect of barley germination on the formation of natural precursors of N-nitrosodimethylamine in green malt and final malt." Kvasny Prumysl 36, n.º 6 (1 de junho de 1990): 162–65. http://dx.doi.org/10.18832/kp1990020.
Texto completo da fonteKawanami, H. "Heteroepitaxial technologies of III–V on Si". Solar Energy Materials and Solar Cells 66, n.º 1-4 (fevereiro de 2001): 479–86. http://dx.doi.org/10.1016/s0927-0248(00)00209-9.
Texto completo da fonteDutta, Nlloy K. "III-V Device Technologies for Lightwave Applications". AT&T Technical Journal 68, n.º 1 (2 de janeiro de 1989): 5–18. http://dx.doi.org/10.1002/j.1538-7305.1989.tb00642.x.
Texto completo da fonteShah, Nitin J., e Shin-Shem Pei. "III-V Device Technologies for Electronic Applications". AT&T Technical Journal 68, n.º 1 (2 de janeiro de 1989): 19–28. http://dx.doi.org/10.1002/j.1538-7305.1989.tb00643.x.
Texto completo da fonteTakagi, S., R. Zhang, S. H. Kim, M. Yokoyama e M. Takenaka. "(Invited) Performance Enhancement Technologies in III-V/Ge MOSFETs". ECS Transactions 58, n.º 9 (31 de agosto de 2013): 137–48. http://dx.doi.org/10.1149/05809.0137ecst.
Texto completo da fonteHeinecke, Harald, e Eberhard Veuhoff. "Evaluation of III–V growth technologies for optoelectronic applications". Materials Science and Engineering: B 21, n.º 2-3 (novembro de 1993): 120–29. http://dx.doi.org/10.1016/0921-5107(93)90334-j.
Texto completo da fonteRaj, Vidur, Tuomas Haggren, Wei Wen Wong, Hark Hoe Tan e Chennupati Jagadish. "Topical review: pathways toward cost-effective single-junction III–V solar cells". Journal of Physics D: Applied Physics 55, n.º 14 (3 de dezembro de 2021): 143002. http://dx.doi.org/10.1088/1361-6463/ac3aa9.
Texto completo da fonteCaimi, D., H. Schmid, T. Morf, P. Mueller, M. Sousa, K. E. Moselund e C. B. Zota. "III-V-on-Si transistor technologies: Performance boosters and integration". Solid-State Electronics 185 (novembro de 2021): 108077. http://dx.doi.org/10.1016/j.sse.2021.108077.
Texto completo da fonteTakagi, S., M. Kim, M. Noguchi, K. Nishi e M. Takenaka. "(Invited) Tunneling FET Technologies Using III-V and Ge Materials". ECS Transactions 69, n.º 10 (2 de outubro de 2015): 99–108. http://dx.doi.org/10.1149/06910.0099ecst.
Texto completo da fonteTeses / dissertações sobre o assunto "Technologie III-V"
Fawaz, Hussein. "Technologie multifonction de transistors à effet de champ sur matériaux III-V pour logique rapide et hyperfréquences". Lille 1, 1993. http://www.theses.fr/1993LIL10038.
Texto completo da fonteCallen, Olivier. "Nouvelle méthode d'investigation par effet Hall des états d'interface dans les composants à base d'hétérostructures III-V". Montpellier 2, 2000. http://www.theses.fr/2000MON20029.
Texto completo da fonteLe, Pallec Michel. "Technologie de photorécepteurs intégrés sur InP". Grenoble INPG, 1997. http://www.theses.fr/1997INPG0144.
Texto completo da fonteUng, Thuy Dieu Thi. "SYNTHÈSE ET CARACTÉRISATION DE NANOCRISTAUX COLLOÏDAUX DE SEMI-CONDUCTEURS III-V DOPÉS PAR DES TERRES RARES". Phd thesis, Grenoble, 2010. http://tel.archives-ouvertes.fr/tel-00626513.
Texto completo da fonteSciancalepore, Corrado. "Intégration hétérogène III-V sur silicium de microlasers à émission par la surface à base de cristaux photoniques". Phd thesis, Ecole Centrale de Lyon, 2012. http://tel.archives-ouvertes.fr/tel-00915280.
Texto completo da fonteMbow, Babacar. "Etude des réponses spectrales dans le proche infra-rouge des composés mixtes III-V, ternaires et quaternaires, à base de GaSb et de leurs dérivés". Montpellier 2, 1992. http://www.theses.fr/1992MON20048.
Texto completo da fonteBringer, Charlotte. "Technologie et caractérisation des VCSELs à diaphragme d'oxyde : application à la détection en cavité verticale". Toulouse 3, 2005. http://www.theses.fr/2005TOU30008.
Texto completo da fonteThis work deals with the fabrication and the characterization of buried oxide-confined vertical-cavity surface-emitting lasers (VCSELs AlOx) for emission at 850 nm. We first focus on the structure design and on the fabrication steps. Optical and electrical measurements show the improvements of the VCSELs characteristics and allow for identify current limitations. Further, we explain the principle of resonant cavity enhanced detector and then describe each detailed vertical geometry: single photodetector, standard VCSEL and BiVCSEL. Measured spectral behaviors on each device are show and discussed. Last part deals with lateral integrated detection owing the optical waveguiding of spontaneous emission between neighboting VCSELs sharing the same cavity. The main application of this new detection system concerns the VCSEL power monitoring
BRINGER, Charlotte. "Technologie et caractérisation des VCSELs à diaphragme d'oxyde. Application à la détection en cavité verticale". Phd thesis, Université Paul Sabatier - Toulouse III, 2005. http://tel.archives-ouvertes.fr/tel-00010239.
Texto completo da fonteBouguen, Laure. "Annulation de la dérive thermique de capteurs magnétiques à base d'hétérostructures pseudomorphiques AlGaAs/InGaAs/GaAs". Montpellier 2, 2009. http://www.theses.fr/2009MON20075.
Texto completo da fonteThe goal of this work was to decrease, and even cancel, the thermal drift of magnetic sensors based on pseudomorphic AlGaAs/InGaAs/GaAs heterojunction. For that, the chosen solution consisted in controlling the Fermi level pinning at the surface of existing heterojunction. This control has been done by the addition of a gate with different geometries and with a suitable polarisation. We showed that an one dimensional model was not adapted and that it was necessary to do a two dimensional analysis with the finite element method witch explain the results obtained
Bouillaud, Hugo. "Fabrication et optimisation des caractéristiques thermiques de diodes Schottky de la filière GaAs et reportées sur SiHR pour des applications de multiplication de fréquences". Electronic Thesis or Diss., Université de Lille (2022-....), 2023. http://www.theses.fr/2023ULILN043.
Texto completo da fonteThe exponential needs associated with applications exploiting the THz domain require to expand the range of available sources and optimize their fabrication processes. In this thesis, we focused on schottky diodes for its use as frequency multipliers. Our experimental research involved optimizing the characteristics of GaAs schottky diodes through the development and implementation of an innovative fabrication process. First, we fabricated GaAs schottky diodes on GaAs substrate with several aspect ratios in order to make a reference in terms of device. Then we fabricated a flip-chip device for a 150 GHz frequency multiplication application in a waveguide block. Finally, in order to enhance the power handling of the diodes, we optimized their thermal dissipation by transferring their epitaxial structure onto a substrate with higher thermal conductivity : SiHR (high resistivity silicon). The complete technological processes for these fabrications are detailed, and the last part of the study is dedicated to their characterization. On one hand, we assessed any variations in the characteristics of GaAs diodes on GaAs induced by the different aspect ratios. On the other hand, we compared the two technologies on SiHR and GaAs substrates. This work demonstrates the potential of this type of transferred technology, where a significant reduction of thermal resistance is observed and is associated with a notable improvement of the series resistance
Livros sobre o assunto "Technologie III-V"
Prost, Werner. Technologie der III/V-Halbleiter. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/978-3-642-60786-8.
Texto completo da fonteLi, Tingkai, Michael A. Mastro e Armin Dadgar. III-V compound semiconductors: Integration with silicon-based microelectronics. Boca Raton: Taylor & Francis, 2010.
Encontre o texto completo da fonteConference on Semi-insulating III-V Materials (5th 1988 Malmö, Sweden). Semi-insulating III-V materials: Malmö, 1988 : proceedings of the 5th Conference on Semi-insulating III-V Materials held in Malmö, Sweden, 1-3 June 1988. Bristol, England: A. Hilger, 1988.
Encontre o texto completo da fonteEkaterinburg, Russia) Mezhdunarodnyĭ nauchno-prakticheskiĭ seminar "Intellektualʹnye informat︠s︡ionnye tekhnologii v. upravlencheskoĭ dei︠a︡telʹnosti" (3rd 2001. Intellektualʹnye informat︠s︡ionnye tekhnologii v upravlencheskoĭ dei︠a︡telʹnosti: III Mezhdunarodnyĭ nauchno-prakticheskiĭ seminar, 23-24 i︠a︡nvari︠a︡ 2001 g. : materialy. Ekaterinburg: Uralʹskiĭ gos. tekhn. universitet, 2001.
Encontre o texto completo da fonteMezhdunarodnai︠a︡, nauchnai︠a︡ konferent︠s︡ii︠a︡ "Chelovek kulʹtura i. obshchestvo v. kontekste globalizat︠s︡ii sovremennogo mira" (3rd 2004 Moscow Russia). Chelovek, kulʹtura i obshchestvo v kontekste globalizat︠s︡ii sovremennogo mira: Ėlektronnai︠a︡ kulʹtura i novye gumanitarnye tekhnologii XXI veka : materialy III Mezhdunarodnoĭ nauchnoĭ konferent︠s︡ii. Moskva: Izd-vo "Nezavisimyĭ in-t grazhdanskogo ob-va", 2004.
Encontre o texto completo da fonteSoldatkina, I͡A V., e Elena I͡Urʹevna Lazareva. Mediĭnye prot︠s︡essy v sovremennom gumanitarnom prostranstve: Podkhody k izuchenii︠u︡, ėvoli︠u︡t︠s︡ii︠a︡, perspektivy : materialy III nauchno-prakticheskoĭ konferent︠s︡ii. Moskva: MPGU, 2017.
Encontre o texto completo da fonteLi, Daoliang. Computer and Computing Technologies in Agriculture V: 5th IFIP TC 5/SIG 5.1 Conference, CCTA 2011, Beijing, China, October 29-31, 2011, Proceedings, Part III. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012.
Encontre o texto completo da fonteBelarus) Mezhdunarodnai︠a︡ konferent︠s︡ii︠a︡ "Informat︠s︡ionnye sistemy i tekhnologii" (3nd 2006 Minsk. Informat︠s︡ionnye sistemy i tekhnologii (IST'2006): Tretʹi︠a︡ Mezhdunarodnai︠a︡ konferent︠s︡ii︠a︡ (Minsk, 1--3 noi︠a︡bri︠a︡ 2006 g.) : materialy : v 2 chasti︠a︡kh = Information systems and technologies (IST'2006) : proceedings of the III International conference (Minsk, November 1--3, 2006) In two parts. Minsk: Akademii︠a︡ upravlenii︠a︡ pri Prezidente Respubliki Belarusʹ, 2006.
Encontre o texto completo da fonteTechnologie der III/V-Halbleiter: III/V-Heterostrukturen und elektronische Höchstfrequenz-Bauelemente. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997.
Encontre o texto completo da fonteProst, Werner. Technologie der III/V-Halbleiter. III/V-Heterostrukturen und elektronische Höchstfrequenz-Bauelemente. Springer Verlag, 1997.
Encontre o texto completo da fonteCapítulos de livros sobre o assunto "Technologie III-V"
Prost, Werner. "Einleitung". In Technologie der III/V-Halbleiter, 1–2. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/978-3-642-60786-8_1.
Texto completo da fonteProst, Werner. "Halbleiter-Materialsysteme". In Technologie der III/V-Halbleiter, 3–17. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/978-3-642-60786-8_2.
Texto completo da fonteProst, Werner. "Halbleiterkristallzucht (GaAs)". In Technologie der III/V-Halbleiter, 19–23. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/978-3-642-60786-8_3.
Texto completo da fonteProst, Werner. "Herstellung aktiver Bauelementschichten". In Technologie der III/V-Halbleiter, 25–68. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/978-3-642-60786-8_4.
Texto completo da fonteProst, Werner. "Material-Charakterisierung von Halbleiter-Heterostrukturen". In Technologie der III/V-Halbleiter, 69–91. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/978-3-642-60786-8_5.
Texto completo da fonteProst, Werner. "Abscheidung und Charakterisierung dielektrischer Schichten". In Technologie der III/V-Halbleiter, 93–113. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/978-3-642-60786-8_6.
Texto completo da fonteProst, Werner. "Bauelementtechnologie". In Technologie der III/V-Halbleiter, 115–67. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/978-3-642-60786-8_7.
Texto completo da fonteProst, Werner. "Umweltschutz und Arbeitssicherheit". In Technologie der III/V-Halbleiter, 169–83. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/978-3-642-60786-8_8.
Texto completo da fonteCheng, Keh Yung. "Material Technologies". In III–V Compound Semiconductors and Devices, 161–202. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-51903-2_5.
Texto completo da fonteSingh, R. B., R. S. Paroda e Malavika Dadlani. "Science, Technology and Innovation". In India Studies in Business and Economics, 213–50. Singapore: Springer Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-0763-0_8.
Texto completo da fonteTrabalhos de conferências sobre o assunto "Technologie III-V"
Rodwell, M. J. W., S. Lee, C. Y. Huang, D. Elias, V. Chobpattana, B. J. Thibeault, W. Mitchell, S. Stemmer e A. C. Gossard. "High Performance III-V MOS Technologies". In 2014 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2014. http://dx.doi.org/10.7567/ssdm.2014.e-8-1.
Texto completo da fonteClaeys, C., A. Firrincieli, K. Martens, J. A. Kittl e E. Simoen. "Contact technology schemes for advanced Ge and III-V CMOS technologies". In 2012 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS). IEEE, 2012. http://dx.doi.org/10.1109/iccdcs.2012.6188889.
Texto completo da fontePasslack, M., R. Droopad, K. Rajagopalan, J. Abrokwah, P. Zurcher e P. Fejes. "High Mobility III-V Mosfet Technology". In 2006 IEEE Compound Semiconductor Integrated Circuit Symposium. IEEE, 2006. http://dx.doi.org/10.1109/csics.2006.319914.
Texto completo da fonteGrant, Ian R. "Progress in III-V materials technology". In European Symposium on Optics and Photonics for Defence and Security, editado por Anthony W. Vere, James G. Grote e Francois Kajzar. SPIE, 2004. http://dx.doi.org/10.1117/12.583023.
Texto completo da fontePasslack, Matthias. "III–V metal-oxide-semiconductor technology". In Related Materials (IPRM). IEEE, 2008. http://dx.doi.org/10.1109/iciprm.2008.4703075.
Texto completo da fonteCrean, G. M., S. Paineau, B. Corbett, D. O’Connell, K. Rodgers, F. Stain, P. V. Kelly e G. Redmond. "Hybridisation Issues for Optoelectronic Components". In The European Conference on Lasers and Electro-Optics. Washington, D.C.: Optica Publishing Group, 1998. http://dx.doi.org/10.1364/cleo_europe.1998.ctuc1.
Texto completo da fonteChiah, Siau Ben, Xing Zhou, Binit Syamal, Kenneth Eng Kian Lee, Cheng Yeow Ng e Eugene A. Fitzgerald. "Hybrid III–V/Si-CMOS PDK for Monolithic Heterogeneously-Integrated III–V/Si Technology Platforms". In 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT). IEEE, 2020. http://dx.doi.org/10.1109/icsict49897.2020.9278196.
Texto completo da fonteTakagi, S., e M. Takenaka. "III-V/Ge CMOS technologies on Si platform". In 2010 IEEE Symposium on VLSI Technology. IEEE, 2010. http://dx.doi.org/10.1109/vlsit.2010.5556205.
Texto completo da fonteKoch, Thomas L. "III-V and Silicon Photonic Integrated Circuit Technologies". In Asia Communications and Photonics Conference. Washington, D.C.: OSA, 2012. http://dx.doi.org/10.1364/acp.2012.aw1a.2.
Texto completo da fonteKoch, Thomas L. "III-V and Silicon Photonic Integrated Circuit Technologies". In Asia Communications and Photonics Conference. Washington, D.C.: OSA, 2012. http://dx.doi.org/10.1364/acpc.2012.aw1a.2.
Texto completo da fonteRelatórios de organizações sobre o assunto "Technologie III-V"
Muñoz, Ernesto, Iván Hernández, Francisco González, Nathalie Cely e Iván Prieto. The Discovery of New Export Products in Ecuador. Inter-American Development Bank, junho de 2010. http://dx.doi.org/10.18235/0010828.
Texto completo da fonteAldendifer, Elise, McKenzie Coe, Taylor Faught, Ian Klein, Peter Kuylen, Keeli Lane, Robert Loughran et al. The Safe and Efficient Development of Offshore Transboundary Hydrocarbons: Best Practices from the North Sea and Their Application to the Gulf of Mexico. Editado por Gabriel Eckstein. Texas A&M University School of Law Program in Energy, Environmental, & Natural Resource Systems, setembro de 2019. http://dx.doi.org/10.37419/eenrs.offshoretransboundaryhydrocarbons.
Texto completo da fonteWilson, Thomas E., Avraham A. Levy e Tzvi Tzfira. Controlling Early Stages of DNA Repair for Gene-targeting Enhancement in Plants. United States Department of Agriculture, março de 2012. http://dx.doi.org/10.32747/2012.7697124.bard.
Texto completo da fonteDawson, William O., e Moshe Bar-Joseph. Creating an Ally from an Adversary: Genetic Manipulation of Citrus Tristeza. United States Department of Agriculture, janeiro de 2004. http://dx.doi.org/10.32747/2004.7586540.bard.
Texto completo da fonteKira, Beatriz, Rutendo Tavengerwei e Valary Mumbo. Points à examiner à l'approche des négociations de Phase II de la ZLECAf: enjeux de la politique commerciale numérique dans quatre pays d'Afrique subsaharienne. Digital Pathways at Oxford, março de 2022. http://dx.doi.org/10.35489/bsg-dp-wp_2022/01.
Texto completo da fonteJoel, Daniel M., Steven J. Knapp e Yaakov Tadmor. Genomic Approaches for Understanding Virulence and Resistance in the Sunflower-Orobanche Host-Parasite Interaction. United States Department of Agriculture, agosto de 2011. http://dx.doi.org/10.32747/2011.7592655.bard.
Texto completo da fonte