Literatura científica selecionada sobre o tema "Spinorbitronic"
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Artigos de revistas sobre o assunto "Spinorbitronic"
Christensen, Dennis Valbjørn, Urs Staub, T. R. Devidas, Beena Kalisky, Katja Nowack, James Luke Webb, Ulrik L. Andersen et al. "2024 Roadmap on Magnetic Microscopy Techniques and Their Applications in Materials Science". Journal of Physics: Materials, 8 de março de 2024. http://dx.doi.org/10.1088/2515-7639/ad31b5.
Texto completo da fonteAceves Rodriguez, Uriel A., Filipe Souza Mendes Guimarães, Sascha Brinker e Samir Lounis. "Magnetic exchange interactions at the proximity of a superconductor". Journal of Physics: Condensed Matter, 12 de março de 2024. http://dx.doi.org/10.1088/1361-648x/ad32de.
Texto completo da fonteTeses / dissertações sobre o assunto "Spinorbitronic"
Trottmann, Michaela [Verfasser], e Dominique [Akademischer Betreuer] Bougeard. "Characterisation of III-V semiconductor hybrid systems for spinorbitronic functionality / Michaela Trottmann ; Betreuer: Dominique Bougeard". Regensburg : Universitätsbibliothek Regensburg, 2020. http://d-nb.info/1218299053/34.
Texto completo da fonteTo, Duy-Quang. "Advanced k.p multiband methods for semiconductor-based spinorbitronics". Thesis, Institut polytechnique de Paris, 2019. http://www.theses.fr/2019IPPAX001.
Texto completo da fonteThis thesis work is essentially devoted to the development of the tunneling theory k.p 14, 30 and 40 bands for a spinorbitronic application with semiconductor. Spinorbitronic combines the effects of spin and orbit, which via spin-orbit coupling, introduces new transport properties such as spin Hall and anomalous Hall effects. The latter is characterized by a deflection of the trajectory of polarized carriers in the transverse direction of their flow. Other characteristic effects concern i) the spin transfer mechanisms for switching angular momentum transfer magnetization, thus generalizing spin transfer as well as ii) spin-charge conversion mediated by the terms Rashba or Dresselhaus. In this context, our tunnel transport theory is adaptable to semiconductor heterostructures, magnetic or not, dealing with a simple interface or tunnel junctions. It allows to take into account in a fine way the spin-orbit interactions of heart and interface. It generally uses the introduction of additional high bands, called ghosts, to deal with the spurious states inherent in the multiband k.p theory. Apart from the introduction of the "spurious" states neither deforming the electronic structure nor the polarized transport, our approach uses the continuity of the components of the wave functions at each interface and the connection of the components of wave current according to symmetry interfaces either by 1) the continuity of the components of wave current (extension of Ben Daniel Duke theory), 2) the connection conditions obeying a C2v symmetry by mixing heavy holes cd / light in the valence band (conditions from Ivchenko) or 3) discontinuity of the 'high' bands. We also demonstrate the equivalence of the continuity conditions for the case of AlAs / GaAs / AlAs III-V quantum wells, which represents a generalization of previous results developed in 14 bands.The whole of this work of analytical and numerical thesis, include several important demonstrations. We show that our theory can be used to describe the spin transport of spin-orbit coupled states in growth axis (100) or (110) semiconductor heterostructures. These results are notably materialized by the calculations of the three components of the spin current in the III-V barriers (GaAs, AlAs) acting as spin phase-shifters. Calculations show that we develop in effect, as provided by the analytic theory, a vector rotation of the spin density matrix in the thickness of the barrier and as provided by the application of an effective spin-orbit field Dresselhaus parallel to the plane of the barrier.Our theory is also successfully compared to the multiband perturbation calculations using Green's transport functions to address the mechanisms of abnormal Hall tunnel effect in the conduction band and the valence band. The results are remarkable of fidelity which shows the power of the technique used. We also calculate spin current properties in GaMnAs-based ferromagnetic tunnel junctions to derive the spin transfer torque responsible for switching the fine ferromagnetic element. We show, for example, how the transverse spin components of the current are relevant to switch a magnetization. Finally, we adapted our transport theory to III-V structures to compute confined quantum well states in the conduction band and valence band. We successfully compare our state-of-the-art 6-band and 14-band multiband results on the optical anisotropy of absorption between the directions (110 and (1-10) of the electric field when the symmetry of the heterostructure is reduced to C2v symmetry
Palin, Victor. "Heusler compounds for spin-orbitronics : exploration of topological effects and magnetic anisotropy engineering". Electronic Thesis or Diss., Université de Lorraine, 2023. http://www.theses.fr/2023LORR0031.
Texto completo da fonteOver the last decades, the needs in storage capacity as shot up with computing development. The energy crisis that we are going through in the 21th century requires to develop new fundamental materials for data storage. It was with this purpose that physicist develop new ways to store information in order to reduce device’s scale, energy consumption and manufacturing cost while memories’ size and information’s speed has shot up. The research conducted in this thesis make use of two different ways to improve data storage:- The first one is by using emerging materials in science, called topological insulator, that host peculiar spin texture predicted to generate very high spin-to-charge interconversion. This non-trivial state of matter can be complex to stabilize and image. This is the goal of the first part of this thesis where topological insulators coming from the half-Heusler family are engineered by molecular beam epitaxy. Structural characterization are carried out by X-ray and electronic diffraction along with scanning tunneling microscopy and transmission electron microscopy that confirm an epitaxial growth in the desired structure predicted to host a non-trivial topology. Angle resolved photoemission spectroscopy is performed and reveals the presence of linear states around the Γ point of the Brillouin zone. Nonetheless, the complex Fermi surfaces imaged do not allow to draw clear conclusions on the non-trivial nature of both alloys. Transport measurements were performed to test the potential interconversion efficiency of our compounds and spin Seebeck experiments revealed a spin-to-charge conversion two to three times higher in our TIs compared to a Pt control sample.- The second way chosen to improve conventional magnetic memories is by playing with magnetic anisotropy. Here again, Heusler family offers a vast variety of compounds allowing to fulfill this goal. The Mn3Z family compounds has attracted a lot of attention owing to their tetragonalized unit cell that allows to stabilize perpendicular magnetic anisotropy (PMA) even in a thin film geometry. In this thesis, we investigate Mn(100-x)Ga(x) and Mn(100-x)Ge(x) alloys and manage to stabilize them in their D0(22) structure that offers PMA. A peculiar zoom is then done on Mn3Ge-based stacks composed of a second Heusler alloy with remarkable properties, the Co2MnZ’ family (Z' = Si, Ge). Co2MnZ’ compounds have a half-metallic behavior making them very suitable for spin transfer torque related applications due to their low magnetic damping and full spin polarization at the Fermi level. Here we develop Mn3Ge/Co2MnZ' heterostructures (bilayers and superlattices) and manage to grow both compounds in the desired structures. The overall system is perpendicularly magnetized (thanks to Mn3Ge), terminated with a half-metal magnet (thanks to Co2MnZ') and the thicknesses used for both layers allow to tune the magnetic properties and obtained 100% of remanence
Noel, Paul. "Dynamical spin injection and spin to charge current conversion in oxide-based Rashba interfaces and topological insulators". Thesis, Université Grenoble Alpes (ComUE), 2019. http://www.theses.fr/2019GREAY062.
Texto completo da fonteUsing a ferromagnetic layer has been the first method to obtain and detect spin currents, allowing to modify the magnetization state of an adjacent layer using spin transfer torque. However, in recent years, an alternative way to manipulate spin currents has been proposed. An emerging field of spintronics, called spin-orbitronics, exploits the interplay between charge and spin currents enabled by the spin-orbit coupling (SOC) in non-magnetic systems. An efficient current conversion can be obtained through the Spin Hall Effect in heavy metals such as Platinum or Tantalum. The conversion can also be obtained by exploiting the Edelstein Effect in Rashba interfaces and topological insulators.The spin to charge conversion by means of Inverse Edelstein Effect and inverse Spin Hall Effect can be studied by the spin pumping by ferromagnetic resonance technique. This manuscript present these two conversion mechanisms as well as the technique that was used to measure them, which is based on an electrical detection of the ferromagnetic resonance. Results on the spin to charge current conversion obtained in metals, oxide-based Rashba interfaces and topological insulators will be presented. Among these systems we have demonstrated the possibility to tune the conversion efficiency by using a gate voltage in a two-dimensional electron gas at the surface of an oxide SrTiO3. Moreover it is possible to tune this effect, a remanent way, thanks to the ferroelectricity obtained in SrTiO3 at cryogenic temperatures.Other studied systems such as topological insulators HgTe and Sb2Te3 also have promising properties for an efficient spin to charge current conversion at room temperature. In particular we showed than in HgTe by using a thin HgCdTe protective layer, it is possible to obtain a spin to charge current conversion efficiency one order of magnitude larger than in Pt.These results suggest that stwo dimensional electron gases at oxide interfaces and topological insulators have a strong potential for the efficient detection of spin currents for possible beyond CMOS applications
Capítulos de livros sobre o assunto "Spinorbitronic"
George, J. M., D. Q. To, T. Huong Dang, E. Erina, T. L. Hoai Nguyen, H. J. Drouhin e H. Jaffrès. "Tunneling Magnetoresistance, Spin-Transfer and Spinorbitronics with (Ga,Mn)As". In Spintronics Handbook: Spin Transport and Magnetism, Second Edition, 175–245. CRC Press, 2019. http://dx.doi.org/10.1201/9780429434235-5.
Texto completo da fonteRelatórios de organizações sobre o assunto "Spinorbitronic"
Sklenar, Joseph, Wei Zhang, Matthias Jungfleisch, Wanjun Jiang, Hilal Saglam, John Pearson, John Ketterson e Axel Hoffmann. Spin Hall effects in metallic antiferromagnets – perspectives for future spinorbitronics. Office of Scientific and Technical Information (OSTI), fevereiro de 2016. http://dx.doi.org/10.2172/2308896.
Texto completo da fonte