Literatura científica selecionada sobre o tema "Spacers gate"
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Artigos de revistas sobre o assunto "Spacers gate"
Weng, Chun Jen. "Etching Effects of Nanotechnology Fabrication on CMOS Transistor Gate Wafer Manufacturing Process Integration". Advanced Materials Research 154-155 (outubro de 2010): 938–41. http://dx.doi.org/10.4028/www.scientific.net/amr.154-155.938.
Texto completo da fonteWeng, Chun Jen. "Etching Process Effects of CMOS Transistor Gate Manufacturing Nanotechnology Fabrication Integration". Applied Mechanics and Materials 83 (julho de 2011): 91–96. http://dx.doi.org/10.4028/www.scientific.net/amm.83.91.
Texto completo da fonteWylie, Ian W., e N. Garry Tarr. "A new approach to gate/n− overlapped lightly doped drain structures: added gate after implantation of n− (AGAIN)". Canadian Journal of Physics 69, n.º 3-4 (1 de março de 1991): 174–76. http://dx.doi.org/10.1139/p91-027.
Texto completo da fonteKumar, Padakanti Kiran, Bukya Balaji e Karumuri Srinivasa Rao. "Design and analysis of asymmetrical low-k source side spacer halo doped nanowire metal oxide semiconductor field effect transistor". International Journal of Electrical and Computer Engineering (IJECE) 13, n.º 3 (1 de junho de 2023): 3519. http://dx.doi.org/10.11591/ijece.v13i3.pp3519-3529.
Texto completo da fonteWostyn, Kurt, Karine Kenis, Hans Mertens, Adrian Vaisman Chasin, Andriy Hikavyy, Frank Holsteyns e Naoto Horiguchi. "Low Temperature SiGe Steam Oxide - Aqueous Hf and NH3/NF3 Remote Plasma Etching and its Implementation as Si GAA Inner Spacer". Solid State Phenomena 282 (agosto de 2018): 126–31. http://dx.doi.org/10.4028/www.scientific.net/ssp.282.126.
Texto completo da fonteGuo, Mengxue, Weifeng Lü, Ziqiang Xie, Mengjie Zhao, Weijie Wei e Ying Han. "Effects of Symmetric and Asymmetric Double-Layer Spacers on a Negative-Capacitance Nanosheet Field-Effect Transistor". Journal of Nanoelectronics and Optoelectronics 17, n.º 6 (1 de junho de 2022): 873–82. http://dx.doi.org/10.1166/jno.2022.3266.
Texto completo da fonteDurfee, Curtis, Ivo Otto IV, Subhadeep Kal, Shanti Pancharatnam, Matthew Flaugh, Toshiki Kanaki, Matthew Rednor et al. "Epi Source-Drain Damage Mitigation During Channel Release of Stacked Nanosheet Gate-All-Around Transistors". ECS Transactions 112, n.º 1 (29 de setembro de 2023): 45–52. http://dx.doi.org/10.1149/11201.0045ecst.
Texto completo da fonteConvertino, Clarissa, Cezar Zota, Heinz Schmid, Daniele Caimi, Marilyne Sousa, Kirsten Moselund e Lukas Czornomaz. "InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities". Materials 12, n.º 1 (27 de dezembro de 2018): 87. http://dx.doi.org/10.3390/ma12010087.
Texto completo da fonteLi, Junjie, Yongliang Li, Na Zhou, Wenjuan Xiong, Guilei Wang, Qingzhu Zhang, Anyan Du et al. "Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors". Nanomaterials 10, n.º 4 (20 de abril de 2020): 793. http://dx.doi.org/10.3390/nano10040793.
Texto completo da fonteBacquié, Valentin, Aurélien Tavernier, François Boulard, Olivier Pollet e Nicolas Possémé. "Gate spacers etching of Si3N4 using cyclic approach for 3D CMOS devices". Journal of Vacuum Science & Technology A 39, n.º 3 (maio de 2021): 033005. http://dx.doi.org/10.1116/6.0000871.
Texto completo da fonteTeses / dissertações sobre o assunto "Spacers gate"
Jaffal, Moustapha. "Développement de Dépôt Sélectif Topographique 3D par combinaison de procédés PE(ALD) et ALE en microélectronique". Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALT046.
Texto completo da fonteOver the past decades, the semiconductor industry has witnessed a remarkable increase in the performance of integrated circuits. Photolithography, a crucial process in the manufacturing of integrated circuits, requires an increasingly complex sequence of steps, including various successive treatments such as Self-Aligned Double Patterning (SADP) and Self-Aligned Quadruple Patterning (SAQP). Beyond their complexity and the associated cost escalation, patterning steps can result in alignment errors, known as Edge Placement Error (EPE), which can impact the proper functioning of devices such as transistors. The objective of this thesis is to develop a novel topographical selective deposition (TSD) process using a "Deposition/Etching" super-cycle approach. The advantages of this TSD process include the lateral and direct formation of spacers on the sidewalls of 3D architectures, such as CMOS transistor gates at the nanoscale. This innovative manufacturing approach paves the way for reducing the number of steps and equipment required in the fabrication process, minimizing the potential EPE introduced by photolithography. Consequently, it offers the opportunity to reduce the consumption of horizontal surfaces in 3D transistors, a critical factor in the integration of advanced technological nodes during spacer creation. This work offers a proof of concept of the TSD deposition, using a super-cycle approach that alternates between a conformal deposition process by PE(ALD) and various anisotropic plasma etching processes in the same tool. This approach leverages the physical and chemical properties of plasma interactions with materials
Bertram, David. "Game-Space". Thesis, Virginia Tech, 2005. http://hdl.handle.net/10919/31140.
Texto completo da fonteMaster of Architecture
Calderon, Ana C. M. A. "Understanding game semantics through coherence spaces". Thesis, University of Bath, 2012. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.580675.
Texto completo da fonteBalog, Michael Rosen Warren A. "The automated compilation of comprehensive hardware design search spaces of algorithmic-based implementations for FPGA design exploration /". Philadelphia, Pa. : Drexel University, 2007. http://hdl.handle.net/1860/1770.
Texto completo da fonteBendele, Rigby L. "NEGOTIATING MASCULINITY IN TABLETOP ROLEPLAYING GAME SPACES". VCU Scholars Compass, 2019. https://scholarscompass.vcu.edu/etd/5805.
Texto completo da fonteMeldgaard, Betty Li. "Perception, action, and game space". Universität Potsdam, 2008. http://opus.kobv.de/ubp/volltexte/2008/2462/.
Texto completo da fonteBrown, Eric L. "A quadratic partial assignment and packing model and algorithm for the airline gate assignment problem". Thesis, This resource online, 1995. http://scholar.lib.vt.edu/theses/available/etd-07212009-040541/.
Texto completo da fonteGingold, Chaim. "Miniature gardens and magic crayons : games, spaces and worlds". Thesis, Georgia Institute of Technology, 2003. http://hdl.handle.net/1853/17671.
Texto completo da fonteEbert, Dean A. "Design and development of a configurable fault-tolerant processor (CFTP) for space applications". Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2003. http://library.nps.navy.mil/uhtbin/hyperion-image/03Jun%5FEbert.pdf.
Texto completo da fonteThesis advisor(s): Herschel H. Loomis, Alan A. Ross. Includes bibliographical references (p. 219-224). Also available online.
Humberd, Caleb J. "A compression algorithm for field programmable gate arrays in the space environment". Monterey, California. Naval Postgraduate School, 2011. http://hdl.handle.net/10945/10623.
Texto completo da fonteLivros sobre o assunto "Spacers gate"
Linda, Evans, ed. Hell's gate. Riverdale, NY: Baen, 2006.
Encontre o texto completo da fonteMarroquin-Burr, Kristina. Learn to draw Angry Birds space. [Irvine, Calif.]: Walter Foster Pub., Inc., 2013.
Encontre o texto completo da fonteChampion, Jill. The official guide to Roger Wilco's space adventures. 2a ed. Greensboro, N.C: Compute Books, 1993.
Encontre o texto completo da fonteC, Leinecker Richard, ed. The official guide to Roger Wilco's space adventures. Greensboro, N.C: Compute Books, 1991.
Encontre o texto completo da fonteJohn, Peel. Where in space is Carmen Sandiego? Racine, Wis: Western Pub. Co., 1993.
Encontre o texto completo da fonteBarham, Pamela. Winning space: Game strategies for netball. [U.K.]: Network Coaching International, 1994.
Encontre o texto completo da fonte1959-, Maas Winy, MVRDV (Firm), Delft School of Design, Berlage Instituut, Massachusetts Institute of Technology e cThrough (Firm), eds. Space fighter: The evolutionary city (game:). Barcelona: Actar, 2007.
Encontre o texto completo da fonteKahn, Charles M. The good, the bad, and the ugly: Coalition proof equilibrium in games with infinite strategy spaces. [Urbana, Ill.]: College of Commerce and Business Administration, University of Illinois at Urbana-Champaign, 1989.
Encontre o texto completo da fonteErikson, Steven. Deadhouse gates. New York: Tor, 2005.
Encontre o texto completo da fonteErikson, Steven. Deadhouse Gates. London: Transworld, 2009.
Encontre o texto completo da fonteCapítulos de livros sobre o assunto "Spacers gate"
Jungkeit, Steven R. "The Infinite Gaze". In Spaces of Modern Theology, 41–81. New York: Palgrave Macmillan US, 2012. http://dx.doi.org/10.1057/9781137269027_2.
Texto completo da fonteKaushik, Brajesh Kumar, Sudeb Dasgupta e Pankaj Kumar Pal. "Tri-Gate FinFET Technology and Its Advancement". In Spacer Engineered FinFET Architectures, 11–36. Boca Raton : Taylor & Francis, CRC Press, 2017.: CRC Press, 2017. http://dx.doi.org/10.1201/9781315191089-2.
Texto completo da fonteCaracciolo, Marco. "Game Space". In On Soulsring Worlds, 26–41. London: Routledge, 2024. http://dx.doi.org/10.4324/9781032684024-3.
Texto completo da fonteRiviere, Alex. "Space". In Game Audio Mixing, 110–20. London: Focal Press, 2023. http://dx.doi.org/10.4324/9781003351146-10.
Texto completo da fonteSanliturk, Cagri. "Game of being state". In Civic Spaces and Desire, 68–81. New York : Routledge, 2019.: Routledge, 2019. http://dx.doi.org/10.4324/9781351184137-5.
Texto completo da fonteYoung, Anthony. "Game Changer: SpaceX". In The Twenty-First Century Commercial Space Imperative, 15–28. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-18929-1_2.
Texto completo da fonteEspinola-Arredondo, Ana, e Felix Muñoz-Garcia. "Nash Equilibria in Games with Continuous Action Spaces". In Game Theory, 77–103. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-37574-3_4.
Texto completo da fonteLeeney, Cathy, e Deirdre McFeely. "Social Class, Space, and Containment in 1950s Ireland". In The Golden Thread, 233–56. Liverpool University Press, 2021. http://dx.doi.org/10.3828/liverpool/9781800859463.003.0018.
Texto completo da fonte"Video/Game". In Architectonics of Game Spaces, 71–84. transcript-Verlag, 2019. http://dx.doi.org/10.14361/9783839448021-005.
Texto completo da fonteBinotto, Johannes. "Video/Game". In Architectonics of Game Spaces, 71–84. transcript Verlag, 2019. http://dx.doi.org/10.1515/9783839448021-005.
Texto completo da fonteTrabalhos de conferências sobre o assunto "Spacers gate"
Dhiman, Gaurav, e Rajeev Pourush. "Analysis on Variations of Metal Gate Work Function on Junctionless Double Gate MOSFET with High-k Spacers". In 2020 International Conference on Emerging Trends in Communication, Control and Computing (ICONC3). IEEE, 2020. http://dx.doi.org/10.1109/iconc345789.2020.9117425.
Texto completo da fonteKola, Sekhar Reddy, Yiming Li- e Narasimhulu Thoti. "Characteristics of Gate-All-Around Silicon Nanowire and Nanosheet MOSFETs with Various Spacers". In 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2020. http://dx.doi.org/10.23919/sispad49475.2020.9241603.
Texto completo da fonteSachid, Angada B., Roswald Francis, Maryam Shojaei Baghini, Dinesh K. Sharma, Karl-Heinz Bach, Reinhard Mahnkopf e V. Ramgopal Rao. "Sub-20 nm gate length FinFET design: Can high-κ spacers make a difference?" In 2008 IEEE International Electron Devices Meeting (IEDM). IEEE, 2008. http://dx.doi.org/10.1109/iedm.2008.4796790.
Texto completo da fonteMalviya, Abhishek Kumar, e R. K. Chauhan. "Optimizing performance of dual metal gate modified source FDSOI using symmetric and asymmetric oxide spacers". In 2017 International Conference on Emerging Trends in Computing and Communication Technologies (ICETCCT). IEEE, 2017. http://dx.doi.org/10.1109/icetcct.2017.8280327.
Texto completo da fonteMiyashita, T., K. Ookoshi, A. Hatada, K. Ikeda, Y. S. Kim, M. Nishikawa, T. Sakoda, K. Hosaka e H. Kurata. "Design and Optimization of Gate Sidewall Spacers to Achieve 45nm Ground Rule for High-performance Applications". In 2008 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2008. http://dx.doi.org/10.7567/ssdm.2008.b-5-1.
Texto completo da fonteGong, Jun-Wei, Yeh-Chang Fang, Ta-Yung Wang, Jia-Rui Hu, Chung-I. Chang, Shih-Jung Lee e Jon Opsal. "Thickness and Topography of Dielectric Dual-Sidewall Spacers on Metal Gate of DRAM Extracted by Spectroscopic Ellipsometry". In 2007 IEEE/SEMI Advanced Semiconductor Manufacturing Conference. IEEE, 2007. http://dx.doi.org/10.1109/asmc.2007.375115.
Texto completo da fonteYang, Z. Y., Y. A. Huang, H. C. Lin, P. W. Li, K. M. Chen e G. W. Huang. "Radio-frequency Superiority of Poly-Si TFTs with T-Shaped Gate and Air Spacers for IoT Applications". In 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM). IEEE, 2018. http://dx.doi.org/10.1109/edtm.2018.8421455.
Texto completo da fonteYou, W. X., e P. Su. "Investigation of Gate-Length Dependence of Memory Window for 2D Ferroelectric-FET NVMs Considering the Impact of Spacers". In 2019 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2019. http://dx.doi.org/10.7567/ssdm.2019.m-4-04.
Texto completo da fonteKaur, Prabhjot, Sandeep Singh Gill e Navneet Kaur. "Performance Analysis of Junction Less Accumulation Mode (JAM) Bulk FinFETs Using Dual- K Spacers at 15nm Gate Length". In 2018 2nd International Conference on Trends in Electronics and Informatics (ICOEI). IEEE, 2018. http://dx.doi.org/10.1109/icoei.2018.8553706.
Texto completo da fonteHuang, Po-Yen, Xue-Han Chen, Haoran Wang, Shawn S. H. Hsu e Roy K. Y. Wong. "Comprehensive Study of Human-Body-Model Electrostatic Discharge on p-GaN Gate Power HEMT with AlGaN Barrier Spacers". In 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD). IEEE, 2024. http://dx.doi.org/10.1109/ispsd59661.2024.10579584.
Texto completo da fonteRelatórios de organizações sobre o assunto "Spacers gate"
Aleksandrov, Pavlo. NEWS GAMES IN THE UKRAINIAN MEDIA SPACE DURING THE FULL-SCALE RUSSIAN INVASION. Ivan Franko National University of Lviv, março de 2024. http://dx.doi.org/10.30970/vjo.2024.54-55.12140.
Texto completo da fontePtsuty, Norbert, Andrea Habeck e Christopher Menke. Shoreline position and coastal topographical change monitoring at Gateway National Recreation Area: 2017–2022 and 2007–2022 trend report. National Park Service, agosto de 2023. http://dx.doi.org/10.36967/2299536.
Texto completo da fonteDatsyshyn, Chrystyna. FUNCTIONAL PARAMETERS OF ANTHROPONYM AS ONE OF THE VARIETIES OF FACTUAL MATERIAL IN THE MEDIA TEXT. Ivan Franko National University of Lviv, março de 2024. http://dx.doi.org/10.30970/vjo.2024.54-55.12169.
Texto completo da fonteKourkoutas, Konstantinos, Begonya Saez, Veronica Junjan, Anders Riel Müller, Wiro Kuipers, Fabio Hernández Palacio, Kristiane Marie Fjær Lindland, Tina-Simone Neset e Sara Malmgren. ECIU Position Paper on Living Labs and Experimentation Spaces: Recommendations and insights about the potential of Living Labs as innovation and learning platforms in the ECIU University. University of Stavanger, abril de 2024. http://dx.doi.org/10.31265/usps.276.
Texto completo da fonteDudoit, Alain. The urgency of the first link: Canada’s supply chain at breaking point, a national security issue. CIRANO, julho de 2023. http://dx.doi.org/10.54932/cxwf7311.
Texto completo da fonteSlotiuk, Tetiana. CONCEPT OF SOLUTIONS JOURNALISM MODEL: CONNOTION, FUNCTIONS, FEATURES OF FUNCTIONING. Ivan Franko National University of Lviv, março de 2021. http://dx.doi.org/10.30970/vjo.2021.50.11097.
Texto completo da fonteDemchenko, Dmytro. DEMASSIFICATION OF SOCIAL PROCESSES IN THE CONTEXT OF DIGITAL COMMUNICATION (TO THE PROBLEM OF THE DICHOTOMY OF “ELITE-MASS” AS A POLITICAL COMMUNICATION PARADOX). Ivan Franko National University of Lviv, março de 2024. http://dx.doi.org/10.30970/vjo.2024.54-55.12171.
Texto completo da fonteLevantovych, Oksana. COVID 19 MEDIA COVERAGE: AN ANALYSIS OF HEORHII POCHEPTSOV’S VIEW. Ivan Franko National University of Lviv, fevereiro de 2021. http://dx.doi.org/10.30970/vjo.2021.49.11061.
Texto completo da fonteYatsymirska, Mariya. SOCIAL EXPRESSION IN MULTIMEDIA TEXTS. Ivan Franko National University of Lviv, fevereiro de 2021. http://dx.doi.org/10.30970/vjo.2021.49.11072.
Texto completo da fonteOpening the gate: A resource to support Victorian schools to activate school grounds and open spaces for community use. VicHealth, setembro de 2024. http://dx.doi.org/10.37309/2023.pa1068.
Texto completo da fonte