Literatura científica selecionada sobre o tema "SOA optique intégrée Puits quantiques"
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Teses / dissertações sobre o assunto "SOA optique intégrée Puits quantiques"
Yu, Shuqi. "Semiconductor optical amplifiers for future telecom system". Electronic Thesis or Diss., Institut polytechnique de Paris, 2024. http://www.theses.fr/2024IPPAS006.
Texto completo da fonteThe continuous increase in data transmission demands is compelling optical networks to evolve and enhance their transmission capacity. As the spectral efficiency of optical fibers seems to have reached its limit, one of the best solutions is to extend the spectral bandwidth of optical systems. Considering the demand for large-bandwidth optical amplification systems, we decided to research semiconductor optical amplifiers (SOA) as they offer customized gain and flexible bandwidth expansion, which has good integrability and low cost as well. Historically, SOA faced limitations in terms of noise figures, nonlinear distortions, and polarization sensitivity. However, recent advancements in design have shown promising results, positioning SOAs as viable candidates for future optical transmission solutions. The objective of my thesis is to develop SOAs that mitigate the drawbacks, having a low noise figure and high saturation output power, to make them suitable for using in wide-bandwidth wavelength division multiplexing (WDM) optical networks. In this work, we started with a quick introduction to SOA's basic principles. Then, I demonstrate our three standard designs, measurement results, and improvement ideas, accompanied by a simple model for further optimization. After that, we show some advanced designs and their excellent results. In the end, the application of SOAs in optical transmission systems was explored, highlighting their role in in-line amplifier modules. This research contributes to advancing the understanding and practical application of SOAs in optical communication systems
Rouifed, Mohamed Saïd. "Modulateurs à base de puits quantiques Ge/SiGe pour la photonique sur silicium". Thesis, Paris 11, 2014. http://www.theses.fr/2014PA112178/document.
Texto completo da fonteSilicon photonics has generated a great interest for several years, for applications from long-haul optical telecommunication to intra-chip interconnects. The ultimate integration of optics and electronics on the same chip would allow an increase of the integrated circuit performances at low cost. In this context, the work done during my Ph.D is focused on the study of optical modulation around the direct bandgap of Ge/SiGe quantum well structures, at room temperature, by Quantum Confined Stark effect (QCSE). Electrical and optical simulations have been used to design a modulator operating at 1.3μm. Such device has been fabricated and characterized, demonstrating an extinction ratio up to 6 dB using a 50 µm-long structure. The second objective of my work was to design and demonstrate a modulator integrated on SOI waveguide. The demonstration of an efficient QCSE in Ge/SiGe quantum wells grown on the top of a 360nm homogeneous virtual substrate has paved the way for such integration. Simulations were conducted to demonstrate the feasibility of an evanescent vertical coupling between an SOI optical waveguide and a Ge/SiGe active region and to evaluate the performance of this device. A technological process has then been proposed to fabricate the devices. All steps have been optimized for the fabrication of the modulator integrated with the waveguides. Mainly six electronic beam lithography and four etching steps were used. Preliminary experimental results obtained with such component are presented. This work paves the way to the demonstration of complex photonic integrated circuits, including modulators, photodetectors and passive structures on the same chip
Vakarin, Vladyslav. "Composants optoélectroniques à base d'alliages SiGe riches en Ge pour le proche et moyen infrarouge". Thesis, Université Paris-Saclay (ComUE), 2017. http://www.theses.fr/2017SACLS473/document.
Texto completo da fonteToday optical interconnects have overpassed wires on long, mid and short distances on the telecommunication field. Silicon photonics have known such a development that even inter and intra chip communications progressively become optical. However, the multiplication of data access terminals and the constant increase of data consumption force new components with even lower power consumption to appear. In this context, low power consumption components based on Ge/SiGe quantum wells have been developed. Until now, the use of Ge/SiGe quantum wells has been only limited to electroabsorption modulators. The first part of my thesis was dedicated to the study of a new kind of active region based on coupled Ge/SiGe quantum wells. This work led to the demonstration of giant electrorefractive effect in these structures. The active region based on coupled quantum wells gives a refractive index variation of 2.3×10-3 under a bias of only 1.5 V. The use of this effect for the development of integrated optical modulators needed the development of main building blocks to obtain interferometric structures. Compact bends and Mach Zehnder interferometers have been designed, fabricated and successfully characterized. The sensitivity to the polarization of these structures was evaluated with numerical simulations and polarization insensitive structures were designed. Then, an integrated electrorefractive modulator has been designed and fabricated which needed the development of a new technological process. The first charaterization results are presented. The perspectives of this work are the realization of an efficient modulator with switching voltage lower than 2V. The field of application of photonic integrated circuits is not only limited to the telecommunications. The approach based on integrated optics is also very promising for the identification and analysis of surrounding chemical species. Mid infrared spectral region is particularly suitable for this purpose as it contains specific absorption fingerprints of different chemical species. The use of photonic integrated circuits on silicon substrate allows to develop performant, compact and low cost spectroscopic systems. The second part of my thesis was focused on the development of wideband photonic platform based on Ge-rich Si1-xGex waveguides. Wideband waveguides between 5.5 and 8.5 µm were experimentally demonstrated which made possible the developpement of more complex structures such as MMIs or ultra-wideband Mach Zehnder interferometers. The same device has a theoretical bandwidth of 3.5 µm in TE polarization and of one octave in TM polarization. The operation was experimentally demonstrated between 5.5 and 8.6 µm and is only limited by laser spectral range. This work paves the way for future development of ultra-wideband spectroscopic systems on Ge-rich Si1-xGex platform. The last part of this work concerned second harmonic generation in Ge/SiGe quantum wells for mid infrared spectroscopic systems. First test devices have been designed and fabricated
Lamponi, Marco. "Lasers inp sur circuits silicium pour applications en telecommunications". Phd thesis, Université Paris Sud - Paris XI, 2012. http://tel.archives-ouvertes.fr/tel-00769402.
Texto completo da fonteBernard, Alice. "Towards an electrically-injected optical parametric oscillator". Thesis, Sorbonne Paris Cité, 2018. http://www.theses.fr/2018USPCC104/document.
Texto completo da fonteThe work presented in this thesis deals with the design, fabrication and characterization of sources intended to function as both laser diodes and optical parametric oscillators. These lasers are designed to emit on a higher order mode to allow parametric frequency conversion with fundamental modes of the guide at half frequency. The laser diode and OPO share the same optical cavity; to ensure phase matching and correct nominal structure deviations induced during epitaxial processing, the ridge width is used as a control parameter of the effective indices. The proposed diodes are therefore narrow (3-5 μm) and etched deeply. Consequently, it is potentially interesting to use quantum dots to limit non-radiative recombination on the sidewalls. In the context of this work, we have designed diodes based on this principle for the two GaAs/AlGaAs and InGaAsP/InP systems, which respectively allow to potentially obtain an OPO emission in the vicinity of 2 μm or 3 μm. In the case of InGaAsP/InP, we previously studied the refractive index of InGaAsP alloys in a wavelength range not covered by literature to this day. This data was acquired via effective m-line index measurements of InGaAsP guiding layers epitaxially grown on and lattice-matched to an InP substrate. For optimized laser-OPO structures, simulations show that the OPO threshold should be obtained for an intracavity pump power of a few hundred mW, which is realistic to achieve for state-of-the-art laser diodes. We have studied the electro-optical properties of GaAs/AlGaAs quantum well laser diodes made on the basis of our designs; the observation of the laser effect on the TE2 mode validates the original vertical design of our laser diodes. For the manufacture of narrow-ridge lasers-OPOs, we have developed new manufacturing processes on the Plateforme Technologique Amont (Upstream Technology Platform, CEA - Grenoble), including deep etching (> 10 μm) by ICP-RIE. Finally, we have proposed an alternative diode-OPO concept, comprising distinct laser and OPO cavities coupled by an adiabatic taper
Chaisakul, Papichaya. "Ge/SiGe quantum well devices for light modulation, detection, and emission". Phd thesis, Université Paris Sud - Paris XI, 2012. http://tel.archives-ouvertes.fr/tel-00764154.
Texto completo da fonte