Artigos de revistas sobre o tema "Resistive memories (RRAMs)"
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Kim, Kyoungdu, Woongki Hong, Changmin Lee, Won-Yong Lee, Do Won Kim, Hyeon Joong Kim, Hyuk-Jun Kwon, Hongki Kang e Jaewon Jang. "Sol-gel-processed amorphous-phase ZrO2 based resistive random access memory". Materials Research Express 8, n.º 11 (1 de novembro de 2021): 116301. http://dx.doi.org/10.1088/2053-1591/ac3400.
Texto completo da fonteLin, Wu e Chen. "Effects of Sm2O3 and V2O5 Film Stacking on Switching Behaviors of Resistive Random Access Memories". Crystals 9, n.º 6 (19 de junho de 2019): 318. http://dx.doi.org/10.3390/cryst9060318.
Texto completo da fonteAguilera-Pedregosa, Cristina, David Maldonado, Mireia B. González, Enrique Moreno, Francisco Jiménez-Molinos, Francesca Campabadal e Juan B. Roldán. "Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories". Micromachines 14, n.º 3 (10 de março de 2023): 630. http://dx.doi.org/10.3390/mi14030630.
Texto completo da fonteArumí, Daniel, Salvador Manich, Álvaro Gómez-Pau, Rosa Rodríguez-Montañés, Víctor Montilla, David Hernández, Mireia Bargalló González e Francesca Campabadal. "Impact of Laser Attacks on the Switching Behavior of RRAM Devices". Electronics 9, n.º 1 (20 de janeiro de 2020): 200. http://dx.doi.org/10.3390/electronics9010200.
Texto completo da fonteAnsh e Mayank Shrivastava. "Superior resistance switching in monolayer MoS2 channel-based gated binary resistive random-access memory via gate-bias dependence and a unique forming process". Journal of Physics D: Applied Physics 55, n.º 8 (12 de novembro de 2021): 085102. http://dx.doi.org/10.1088/1361-6463/ac3281.
Texto completo da fonteShu, Pan, Xiaofei Cao, Yongqiang Du, Jiankui Zhou, Jianjun Zhou, Shengang Xu, Yingliang Liu e Shaokui Cao. "Resistive switching performance of fibrous crosspoint memories based on an organic–inorganic halide perovskite". Journal of Materials Chemistry C 8, n.º 37 (2020): 12865–75. http://dx.doi.org/10.1039/d0tc02579h.
Texto completo da fonteAlimkhanuly, Batyrbek, Sanghoek Kim, Lok-won Kim e Seunghyun Lee. "Electromagnetic Analysis of Vertical Resistive Memory with a Sub-nm Thick Electrode". Nanomaterials 10, n.º 9 (20 de agosto de 2020): 1634. http://dx.doi.org/10.3390/nano10091634.
Texto completo da fonteVasileiadis, Nikolaos, Vasileios Ntinas, Georgios Ch Sirakoulis e Panagiotis Dimitrakis. "In-Memory-Computing Realization with a Photodiode/Memristor Based Vision Sensor". Materials 14, n.º 18 (10 de setembro de 2021): 5223. http://dx.doi.org/10.3390/ma14185223.
Texto completo da fontePoddar, Swapnadeep, Yuting Zhang, Zhesi Chen, Zichao Ma e Zhiyong Fan. "(Digital Presentation) Resistive Switching and Brain-Inspired Computing in Perovskite Nanowires and Quantum Wires". ECS Meeting Abstracts MA2022-02, n.º 36 (9 de outubro de 2022): 1336. http://dx.doi.org/10.1149/ma2022-02361336mtgabs.
Texto completo da fonteMinguet Lopez, J., T. Hirtzlin, M. Dampfhoffer, L. Grenouillet, L. Reganaz, G. Navarro, C. Carabasse et al. "OxRAM + OTS optimization for binarized neural network hardware implementation". Semiconductor Science and Technology 37, n.º 1 (8 de dezembro de 2021): 014001. http://dx.doi.org/10.1088/1361-6641/ac31e2.
Texto completo da fonteAli, Sarfraz, Muhammad Abaid Ullah, Ali Raza, Muhammad Waqas Iqbal, Muhammad Farooq Khan, Maria Rasheed, Muhammad Ismail e Sungjun Kim. "Recent Advances in Cerium Oxide-Based Memristors for Neuromorphic Computing". Nanomaterials 13, n.º 17 (28 de agosto de 2023): 2443. http://dx.doi.org/10.3390/nano13172443.
Texto completo da fonteArashloo, Banafsheh Alizadeh. "Cupper doping effect on the electrical characteristics of TiO2 based Memristor". Brilliant Engineering 2, n.º 1 (10 de junho de 2020): 19–24. http://dx.doi.org/10.36937/ben.2021.001.004.
Texto completo da fonteWANG, SHENG-YU, e TSEUNG-YUEN TSENG. "INTERFACE ENGINEERING IN RESISTIVE SWITCHING MEMORIES". Journal of Advanced Dielectrics 01, n.º 02 (abril de 2011): 141–62. http://dx.doi.org/10.1142/s2010135x11000306.
Texto completo da fonteQian, Kai, Viet Cuong Nguyen, Tupei Chen e Pooi See Lee. "Novel concepts in functional resistive switching memories". Journal of Materials Chemistry C 4, n.º 41 (2016): 9637–45. http://dx.doi.org/10.1039/c6tc03447k.
Texto completo da fonteChen, Tong, Kangmin Leng, Zhongyuan Ma, Xiaofan Jiang, Kunji Chen, Wei Li, Jun Xu e Ling Xu. "Tracing the Si Dangling Bond Nanopathway Evolution ina-SiNx:H Resistive Switching Memory by the Transient Current". Nanomaterials 13, n.º 1 (24 de dezembro de 2022): 85. http://dx.doi.org/10.3390/nano13010085.
Texto completo da fonteWan, Zhenni, Robert B. Darling e M. P. Anantram. "Vanadium Oxide Based RRAM Device". MRS Advances 2, n.º 52 (2017): 3019–24. http://dx.doi.org/10.1557/adv.2017.442.
Texto completo da fonteDash, C. S., e S. R. S. Prabaharan. "Science and Technological Understanding of Nano-ionic Resistive Memories (RRAM)". Nanoscience & Nanotechnology-Asia 9, n.º 4 (25 de novembro de 2019): 444–61. http://dx.doi.org/10.2174/2210681208666180621095241.
Texto completo da fonteMolas, Gabriel, Gilbert Sassine, Cecile Nail, Diego Alfaro Robayo, Jean-François Nodin, Carlo Cagli, Jean Coignus, Philippe Blaise e Etienne Nowak. "(Invited) Resistive Memories (RRAM) Variability: Challenges and Solutions". ECS Transactions 86, n.º 3 (20 de julho de 2018): 35–47. http://dx.doi.org/10.1149/08603.0035ecst.
Texto completo da fonteLee, Yunseok, Jiung Jang, Beomki Jeon, Kisong Lee, Daewon Chung e Sungjun Kim. "Resistive Switching Characteristics of Alloyed AlSiOx Insulator for Neuromorphic Devices". Materials 15, n.º 21 (26 de outubro de 2022): 7520. http://dx.doi.org/10.3390/ma15217520.
Texto completo da fonteKoohzadi, Pooria, Mohammad Taghi Ahmadi, Javad Karamdel e Truong Khang Nguyen. "Graphene band engineering for resistive random-access memory application". International Journal of Modern Physics B 34, n.º 18 (10 de julho de 2020): 2050171. http://dx.doi.org/10.1142/s0217979220501714.
Texto completo da fontePérez, Eduardo, Florian Teply e Christian Wenger. "Electrical study of radiation hard designed HfO2-based 1T-1R RRAM devices". MRS Advances 2, n.º 4 (12 de dezembro de 2016): 223–28. http://dx.doi.org/10.1557/adv.2016.616.
Texto completo da fonteWang, Li-Wen, Chih-Wei Huang, Ke-Jing Lee, Sheng-Yuan Chu e Yeong-Her Wang. "Multi-Level Resistive Al/Ga2O3/ITO Switching Devices with Interlayers of Graphene Oxide for Neuromorphic Computing". Nanomaterials 13, n.º 12 (13 de junho de 2023): 1851. http://dx.doi.org/10.3390/nano13121851.
Texto completo da fonteYalon, E., I. Karpov, V. Karpov, I. Riess, D. Kalaev e D. Ritter. "Detection of the insulating gap and conductive filament growth direction in resistive memories". Nanoscale 7, n.º 37 (2015): 15434–41. http://dx.doi.org/10.1039/c5nr03314d.
Texto completo da fonteNapolean, A., N. M. Sivamangai, S. Rajesh, R. Naveenkumar, N. Sharon, N. Nithya e S. Kamalnath. "Effects of Ambient and Annealing Temperature in HfO2 Based RRAM Device Modeling and Circuit-Level Implementation". ECS Journal of Solid State Science and Technology 11, n.º 2 (1 de fevereiro de 2022): 023012. http://dx.doi.org/10.1149/2162-8777/ac557b.
Texto completo da fonteYang, Seyeong, Jongmin Park, Youngboo Cho, Yunseok Lee e Sungjun Kim. "Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown Process". International Journal of Molecular Sciences 23, n.º 21 (31 de outubro de 2022): 13249. http://dx.doi.org/10.3390/ijms232113249.
Texto completo da fonteZhang, Donglin, Bo Peng, Yulin Zhao, Zhongze Han, Qiao Hu, Xuanzhi Liu, Yongkang Han et al. "Sensing Circuit Design Techniques for RRAM in Advanced CMOS Technology Nodes". Micromachines 12, n.º 8 (30 de julho de 2021): 913. http://dx.doi.org/10.3390/mi12080913.
Texto completo da fonteRuiz-Castro, Juan E., Christian Acal, Ana M. Aguilera e Juan B. Roldán. "A Complex Model via Phase-Type Distributions to Study Random Telegraph Noise in Resistive Memories". Mathematics 9, n.º 4 (16 de fevereiro de 2021): 390. http://dx.doi.org/10.3390/math9040390.
Texto completo da fonteLahbacha, Khitem, Fakhreddine Zayer, Hamdi Belgacem, Wael Dghais e Antonio Maffucci. "Performance Enhancement of Large Crossbar Resistive Memories With Complementary and 1D1R-1R1D RRAM Structures". IEEE Open Journal of Nanotechnology 2 (2021): 111–19. http://dx.doi.org/10.1109/ojnano.2021.3124846.
Texto completo da fonteLa Torraca, Paolo, Francesco Maria Puglisi, Andrea Padovani e Luca Larcher. "Multiscale Modeling for Application-Oriented Optimization of Resistive Random-Access Memory". Materials 12, n.º 21 (23 de outubro de 2019): 3461. http://dx.doi.org/10.3390/ma12213461.
Texto completo da fonteKhan, Mohammad Nasim Imtiaz, Shivam Bhasin, Bo Liu, Alex Yuan, Anupam Chattopadhyay e Swaroop Ghosh. "Comprehensive Study of Side-Channel Attack on Emerging Non-Volatile Memories". Journal of Low Power Electronics and Applications 11, n.º 4 (28 de setembro de 2021): 38. http://dx.doi.org/10.3390/jlpea11040038.
Texto completo da fonteHuang, Yanzi, Lingyu Wan, Jiang Jiang, Liuyan Li e Junyi Zhai. "Self-Powered Resistance-Switching Properties of Pr0.7Ca0.3MnO3 Film Driven by Triboelectric Nanogenerator". Nanomaterials 12, n.º 13 (27 de junho de 2022): 2199. http://dx.doi.org/10.3390/nano12132199.
Texto completo da fonteOtsus, Markus, Joonas Merisalu, Aivar Tarre, Anna-Liisa Peikolainen, Jekaterina Kozlova, Kaupo Kukli e Aile Tamm. "Bipolar Resistive Switching in Hafnium Oxide-Based Nanostructures with and without Nickel Nanoparticles". Electronics 11, n.º 18 (19 de setembro de 2022): 2963. http://dx.doi.org/10.3390/electronics11182963.
Texto completo da fontePérez, Eduardo, Óscar González Ossorio, Salvador Dueñas, Helena Castán, Héctor García e Christian Wenger. "Programming Pulse Width Assessment for Reliable and Low-Energy Endurance Performance in Al:HfO2-Based RRAM Arrays". Electronics 9, n.º 5 (23 de maio de 2020): 864. http://dx.doi.org/10.3390/electronics9050864.
Texto completo da fonteCario, Laurent, Cristian Vaju, Benoit Corraze, Vincent Guiot e Etienne Janod. "Electric-Field-Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories". Advanced Materials 22, n.º 45 (18 de outubro de 2010): 5193–97. http://dx.doi.org/10.1002/adma.201002521.
Texto completo da fonteKhan, Mohammad Nasim Imtiaz, e Swaroop Ghosh. "Comprehensive Study of Security and Privacy of Emerging Non-Volatile Memories". Journal of Low Power Electronics and Applications 11, n.º 4 (24 de setembro de 2021): 36. http://dx.doi.org/10.3390/jlpea11040036.
Texto completo da fonteQuiroz, Heiddy P., Jorge A. Calderón e A. Dussan. "Magnetic switching control in Co/TiO2 bilayer and TiO2:Co thin films for Magnetic-Resistive Random Access Memories (M-RRAM)". Journal of Alloys and Compounds 840 (novembro de 2020): 155674. http://dx.doi.org/10.1016/j.jallcom.2020.155674.
Texto completo da fonteMounica, J., e G. V. Ganesh. "Design Of A Nonvolatile 8T1R SRAM Cell For Instant-On Operation". International Journal of Electrical and Computer Engineering (IJECE) 6, n.º 3 (1 de junho de 2016): 1183. http://dx.doi.org/10.11591/ijece.v6i3.9448.
Texto completo da fonteMounica, J., e G. V. Ganesh. "Design Of A Nonvolatile 8T1R SRAM Cell For Instant-On Operation". International Journal of Electrical and Computer Engineering (IJECE) 6, n.º 3 (1 de junho de 2016): 1183. http://dx.doi.org/10.11591/ijece.v6i3.pp1183-1189.
Texto completo da fonteLi, Rongbin, Yan Sun, Qianyu Zhao, Xin Hao, Haowei Liang, Shengang Xu, Yingliang Liu, Xiaoman Bi e Shaokui Cao. "NIR-Triggered Logic Gate in MXene-Modified Perovskite Resistive Random Access Memory". Journal of Materials Chemistry C, 2024. http://dx.doi.org/10.1039/d3tc03847e.
Texto completo da fonteIelmini, Daniele, Federico Nardi, Carlo Cagli e Andrea L. Lacaita. "Size-dependent Temperature Instability in NiO–based Resistive Switching Memory". MRS Proceedings 1250 (2010). http://dx.doi.org/10.1557/proc-1250-g05-03.
Texto completo da fonte"Comprehensive Examination on Resistive Random Access Memory". International Journal of Recent Technology and Engineering 8, n.º 4 (30 de novembro de 2019): 4663–67. http://dx.doi.org/10.35940/ijrte.d8398.118419.
Texto completo da fonteLi, Yang, Shahar Kvatinsky e Lior Kornblum. "Harnessing Conductive Oxide Interfaces for Resistive Random-Access Memories". Frontiers in Physics 9 (27 de outubro de 2021). http://dx.doi.org/10.3389/fphy.2021.772238.
Texto completo da fonteShen, Yang, He Tian, Yanming Liu, Fan Wu, Zhaoyi Yan, Thomas Hirtz, Xuefeng Wang e Tian-Ling Ren. "Modeling of Gate Tunable Synaptic Device for Neuromorphic Applications". Frontiers in Physics 9 (24 de dezembro de 2021). http://dx.doi.org/10.3389/fphy.2021.777691.
Texto completo da fonteYon, Victor, Amirali Amirsoleimani, Fabien Alibart, Roger G. Melko, Dominique Drouin e Yann Beilliard. "Exploiting Non-idealities of Resistive Switching Memories for Efficient Machine Learning". Frontiers in Electronics 3 (25 de março de 2022). http://dx.doi.org/10.3389/felec.2022.825077.
Texto completo da fonteVaccaro, Francesco, Stefano Brivio, Simona Perotto, Aurelio Giancarlo Mauri e Sabina Spiga. "Physics-based compact modelling of the analog dynamics of HfOx resistive memories". Neuromorphic Computing and Engineering, 25 de maio de 2022. http://dx.doi.org/10.1088/2634-4386/ac7327.
Texto completo da fonteRocha, Paulo F., Henrique L. Gomes, Asal Kiazadeh, Qian Chen, Dago M. de Leeuw e Stefan C. J. Meskers. "Switching speed in Resistive Random Access Memories (RRAMS) based on plastic semiconductor". MRS Proceedings 1337 (2011). http://dx.doi.org/10.1557/opl.2011.859.
Texto completo da fonteHyun, Gihwan, Batyrbek Alimkhanuly, Donguk Seo, Minwoo Lee, Junseong Bae, Seunghyun Lee, Shubham Patil et al. "CMOS‐Integrated Ternary Content Addressable Memory using Nanocavity CBRAMs for High Sensing Margin". Small, 12 de abril de 2024. http://dx.doi.org/10.1002/smll.202310943.
Texto completo da fonteChoi, Hyun-Seok, Jihye Lee, Boram Kim, Jaehong Lee, Byung-Gook Park, Yoon Kim e Suck Won Hong. "Highly-packed Self-assembled Graphene Oxide Film-Integrated Resistive Random-Access Memory on a Silicon Substrate for Neuromorphic Application". Nanotechnology, 12 de julho de 2022. http://dx.doi.org/10.1088/1361-6528/ac805d.
Texto completo da fonteXie, Maosong, Yueyang Jia, Chen Nie, Zuheng Liu, Alvin Tang, Shiquan Fan, Xiaoyao Liang, Li Jiang, Zhezhi He e Rui Yang. "Monolithic 3D integration of 2D transistors and vertical RRAMs in 1T–4R structure for high-density memory". Nature Communications 14, n.º 1 (23 de setembro de 2023). http://dx.doi.org/10.1038/s41467-023-41736-2.
Texto completo da fonteXi, Zhao-Ying, Li-Li Yang, Lin-Cong Shu, Mao-Lin Zhang, Shan Li, Li Shi, Zeng Liu, Yu-Feng Guo e Wei-Hua Tang. "The growth and expansive applications of amorphous Ga2O3: a review". Chinese Physics B, 24 de abril de 2023. http://dx.doi.org/10.1088/1674-1056/accf81.
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