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Artigos de revistas sobre o tema "Ramo-Shockley Theorem"

Autor: Grafiati

Publicado: 8 de fevereiro de 2025

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1

Liu, Pei, Chun Liu e Zhenli Xu. "Generalized Shockley–Ramo theorem in electrolytes". Communications in Mathematical Sciences 15, n.º 2 (2017): 555–64. http://dx.doi.org/10.4310/cms.2017.v15.n2.a11.

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2

Kim, Hunsuk, H. S. Min, T. W. Tang e Y. J. Park. "An extended proof of the Ramo-Shockley theorem". Solid-State Electronics 34, n.º 11 (novembro de 1991): 1251–53. http://dx.doi.org/10.1016/0038-1101(91)90065-7.

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3

ALBAREDA, G., F. L. TRAVERSA, A. BENALI e X. ORIOLS. "COMPUTATION OF QUANTUM ELECTRICAL CURRENTS THROUGH THE RAMO–SHOCKLEY–PELLEGRINI THEOREM WITH TRAJECTORIES". Fluctuation and Noise Letters 11, n.º 03 (setembro de 2012): 1242008. http://dx.doi.org/10.1142/s0219477512420084.

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Motivated by a recent approach to solve quantum dynamics with full Coulomb correlations [X. Oriols, Phys. Rev. Lett.98 (2007) 066803], we present here an extension of the Ramo–Shockley–Pellegrini theorem for quantum systems to compute the total (conduction plus displacement) current in terms of quantum (Bohmian) trajectories. By way of test, we derive an extension of the Ramo-Shockley-Pellegrini theorem using standard quantum mechanics and we compare it to our former result. As expected, both formulations give identical results, however we emphasize the numerical viability of computing self-consistently the total current by means of quantum trajectories in front of the difficulties to do it in terms of standard quantum mechanics.

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4

Li, Dion, David Chernin e Y. Y. Lau. "A Relativistic and Electromagnetic Correction to the Ramo–Shockley Theorem". IEEE Transactions on Plasma Science 49, n.º 9 (setembro de 2021): 2661–69. http://dx.doi.org/10.1109/tps.2021.3099512.

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5

Dmitriev, S. G. "Derivation of Relationships of Currents in External Circuit and Parameters of Sampl". Радиотехника и электроника 68, n.º 5 (1 de maio de 2023): 482–86. http://dx.doi.org/10.31857/s0033849423050042.

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Several methods to derive relationships between currents in the external circuit and variations in parameters of samples that induce such currents are considered. The relationships generalize the Shockley–Ramo theorem and may serve as a development of Kirchhoff laws for electrical circuits.

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6

Eisenberg, Bob, e Wolfgang Nonner. "Shockley-Ramo theorem measures conformation changes of ion channels and proteins". Journal of Computational Electronics 6, n.º 1-3 (18 de janeiro de 2007): 363–65. http://dx.doi.org/10.1007/s10825-006-0130-6.

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7

BENALI, A., F. L. TRAVERSA, G. ALBAREDA, A. ALARCÓN, M. AGHOUTANE e X. ORIOLS. "EFFECT OF GATE-ALL-AROUND TRANSISTOR GEOMETRY ON THE HIGH-FREQUENCY NOISE: ANALYTICAL DISCUSSION". Fluctuation and Noise Letters 11, n.º 03 (setembro de 2012): 1241002. http://dx.doi.org/10.1142/s0219477512410027.

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By means of the Ramo–Shockley–Pellegrini theorem, an analytical discussion on how different geometries of gate-all-around 1D ballistic transistors affect their time-dependent current and their (intrinsic) high-frequency noise spectrum is presented. In particular, it is shown that the frequency range where the high-frequency noise spectrum is meaningful increases when the lateral area is decreased.

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8

Yoder, P. D., K. Gärtner e W. Fichtner. "A generalized Ramo–Shockley theorem for classical to quantum transport at arbitrary frequencies". Journal of Applied Physics 79, n.º 4 (15 de fevereiro de 1996): 1951–54. http://dx.doi.org/10.1063/1.361074.

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9

Lo Giudice, A., P. Oliveira, F. Fizzotti, Claudio Manfredotti, E. Vittone, Stefano Bianco, Giuseppe Bertuccio, R. Casiraghi e M. Jaksic. "Study of Ion Induced Damage in 4H-SiC". Materials Science Forum 483-485 (maio de 2005): 389–92. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.389.

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The damage produced by 2 MeV protons on a 4H-SiC Schottky diode has been investigated by monitoring the charge collection efficiency as the function of the ion fluence. A new algorithm based on the Shockley-Ramo-Gunn theorem has been developed to interpret the experimental results. The fitting procedure provides a parameter which is proportional to the average number of active electrical traps generated by a single ion, which can be profitably used to estimate the radiation hardness of the material.

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10

Riegler, W. "An application of extensions of the Ramo–Shockley theorem to signals in silicon sensors". Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 940 (outubro de 2019): 453–61. http://dx.doi.org/10.1016/j.nima.2019.06.056.

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11

He, Zhong. "Review of the Shockley–Ramo theorem and its application in semiconductor gamma-ray detectors". Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 463, n.º 1-2 (maio de 2001): 250–67. http://dx.doi.org/10.1016/s0168-9002(01)00223-6.

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12

Kurlapova, K. V., e Sh S. Zeynalov. "EQUIPMENT FOR THE STUDY OF DIVISION PROCESSES". Bulletin of Dubna International University for Nature, Society, and Man. Series: Natural and engineering sciences, n.º 4 (45) (30 de dezembro de 2019): 11–16. http://dx.doi.org/10.37005/1818-0744-2019-4-11-16.

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This article is devoted to the study of the principles of operation of a pulsed ionization chamber, in which particles emitted from a target create a sequence of well-isolated current pulses (the distance between pulses is several times greater than their width). Firstly, using the Ramo-Shockley theorem, the mechanisms of forming signals on the electrodes of an ionization chamber with Frisch nets are considered, then it is shown how information on energy and spatial orientation of particles can be extracted from such signals using modern electronic pulse digitizers.

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13

Babiker, S., A. Asenov, N. Cameron, S. P. Beaumont e J. R. Barker. "Complete RF Analysis of Compound FETs Based on Transient Monte Carlo Simulation". VLSI Design 8, n.º 1-4 (1 de janeiro de 1998): 313–17. http://dx.doi.org/10.1155/1998/26067.

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In this paper we described a complete methodology to extract the RF performance of ‘real’ compound FETs from time domain Ensemble Monte-Carlo (EMC) simulations which can be used for practical device design. The methodology is based on transient finite element EMC simulation of realistic device geometry. The extraction of the terminal current is based on the Ramo-Shockley theorem. Parasitic elements like the gate and contact resistances are included in the RF analysis at the post-processing stage. Example of the RF analysis of pseudomorphic HEMTs illustrates our approach.

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14

Nonner, Wolfgang, Alexander Peyser, Dirk Gillespie e Bob Eisenberg. "Relating Microscopic Charge Movement to Macroscopic Currents: The Ramo-Shockley Theorem Applied to Ion Channels". Biophysical Journal 87, n.º 6 (dezembro de 2004): 3716–22. http://dx.doi.org/10.1529/biophysj.104.047548.

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15

Göök, A., F. J. Hambsch, A. Oberstedt e S. Oberstedt. "Application of the Shockley–Ramo theorem on the grid inefficiency of Frisch grid ionization chambers". Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 664, n.º 1 (fevereiro de 2012): 289–93. http://dx.doi.org/10.1016/j.nima.2011.10.052.

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16

Yoder, P. D., U. Krumbein, K. Gärtner, N. Sasaki e W. Fichtner. "Statistical Enhancement of Terminal Current Estimation for Monte Carlo Device Simulation". VLSI Design 6, n.º 1-4 (1 de janeiro de 1998): 303–6. http://dx.doi.org/10.1155/1998/34726.

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We present a new generalized Ramo-Shockley theorem (GRST) to evaluate contact currents, applicable to classical moment-based simulation techniques, as well as semiclassical Monte Carlo and quantum mechanical transport simulation, which remains valid for inhomogeneous media, explicitly accounts for generation/recombination processes, and clearly distinguishes between electron, hole, and displacement current contributions to contact current. We then show how this formalism may be applied to Monte Carlo simulation to obtain equations for minimum-variance estimators of steady-state contact current, making use of information gathered from all particles within the device. Finally, by means of an example, we demonstrate this technique’s performance in acceleration of convergence time.

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17

Vittone, E., F. Fizzotti, A. Lo Giudice, C. Paolini e C. Manfredotti. "Theory of ion beam induced charge collection in detectors based on the extended Shockley–Ramo theorem". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 161-163 (março de 2000): 446–51. http://dx.doi.org/10.1016/s0168-583x(99)01000-9.

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18

Janssens, D., F. Brunbauer, K. J. Flöthner, M. Lisowska, H. Muller, E. Oliveri, G. Orlandini et al. "Studying signals in particle detectors with resistive elements such as the 2D resistive strip bulk MicroMegas". Journal of Instrumentation 18, n.º 08 (1 de agosto de 2023): C08010. http://dx.doi.org/10.1088/1748-0221/18/08/c08010.

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Abstract As demonstrated by the ATLAS New Small Wheel community with their MicroMegas (MM) design, resistive electrodes are now used in different detector types within the Micro Pattern Gaseous Detector family to improve their robustness. The extended form of the Ramo-Shockley theorem for conductive media has been applied to a 1 MΩ/□ 2D resistive strip bulk MM to calculate the signal spreading over neighbouring channels using an 80 GeV/c muon track. For this geometry, the dynamic weighting potential was obtained numerically using a finite element solver by applying a junction condition and coordinate scaling technique to accurately represent the boundary conditions of a 10 × 10 cm2 active area. Using test beam measurements, the results of this model will be used to benchmark this microscopic modelling methodology for signal induction in resistive particle detectors.

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19

Dmitriev, S. G. "Role of Auxiliary Potentials and Fields in the Shockley–Ramo Theorem for Inhomogeneous Locally Anisotropic Samples with Polarization". Journal of Communications Technology and Electronics 67, n.º 11 (novembro de 2022): 1395–99. http://dx.doi.org/10.1134/s106422692211002x.

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20

Krieger, Michael, Svetlana Beljakowa, Bernd Zippelius, Valeri V. Afanas'ev, Anton J. Bauer, Yuichiro Nanen, Tsunenobu Kimoto e Gerhard Pensl. "Detection and Electrical Characterization of Defects at the SiO₂/4H-SiC Interface". Materials Science Forum 645-648 (abril de 2010): 463–68. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.463.

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Two electrical measurement techniques are frequently employed for the characteri- zation of traps at the SiO2/SiC interface: the thermal dielectric relaxation current (TDRC) and the conductance method (CM). When plotting Dit as a function of the energy position Eit in the bandgap both techniques reveal comparable results for deep interface traps (EC􀀀Eit > 0:3 eV). For shallower traps, CM always shows a strong increase of Dit which originates from near interface traps (NIT). TDRC provides a contradictory result, namely a slight decrease of Dit. In this paper, we show that the position of NITs in the oxide close to the interface is responsible for the invisibility of these traps in TDRC spectra. We further show that NITs become detectable by the TDRC method by using a discharging voltage Vdis close to the accumulation regime. However, due to the Shockley-Ramo-Theorem the contribution of NITs to the Dit in TDRC spectra is strongly suppressed and can be increased by using thin oxides.

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21

Zeinalov, Sh, P. Sedyshev, O. Sidorova e V. Shvetsov. "Nuclear fission investigation with twin ionization chamber". International Journal of Modern Physics: Conference Series 50 (janeiro de 2020): 2060013. http://dx.doi.org/10.1142/s2010194520600137.

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In this paper, we report recent results obtained in the development of digital pulse processing mathematics for prompt fission neutron (PFN) investigations using a twin ionization chamber (TIC) along with a fast neutron time-of-flight detector (ND). Due to some ambiguities in the literature concerning a pulse induction on TIC electrodes by fission fragment (FF) ionization, we first presented a detailed mathematical analysis of FF signal formation on the TIC anode. The analysis was done using the Shockley–Ramo theorem, which gives the relation between charged particle motion between TIC electrodes and the so-called weighting potential. The weighting potential was calculated by direct numerical solution of the Laplace equation (neglecting space charge) for the TIC geometry and ionization caused by FFs. Formulae for GI correction and digital pulse processing algorithms for PFN time-of-flight measurements and pulse shape analysis are presented and used in experiments for PFN investigations of two reactions, [Formula: see text]U(n[Formula: see text],f) and [Formula: see text]Cf(sf). Results of the measurements were compared to literature data to demonstrate the feasibility of the new developed techniques. These results were necessary for the development of a new PFN investigation facility consisting of a position sensitive fission fragment detector combined with 32 liquid scintillation neutron detectors.

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22

Lauber, Robert, Davide Brivio, Erno Sajo, Jürgen Hesser e Piotr Zygmanski. "Remote sensing array (RSA) for linac beam monitoring". Physics in Medicine & Biology 67, n.º 5 (24 de fevereiro de 2022): 055004. http://dx.doi.org/10.1088/1361-6560/ac530d.

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Abstract The purpose of the present work is to evaluate the feasibility of a novel real-time beam monitoring device for medical linacs which remotely senses charge carriers produced in air by the beam without intersecting and attenuating the beamline. The primary goal is to elaborate a theoretical concept of a possible detector geometry and underlying physical model that allows for determination of clinically relevant beam data in real time, namely MLC leaf positions and dose rate. The detector consists of two opposing electrode arrays arranged in two possible orientations around the beamline. Detection of charge carriers is governed by electromagnetic principles described by Shockley–Ramo theorem. Ions produced by ionization of the air column upstream of patient move laterally in an external electric field. According to the method of images, mirror charges and mirror currents are formed in the strip electrodes. Determination of MU rate and MLC positions using the measured signal requires solution of an inverse problem. In the present work we adopted a Least-Square approach and characterized detector response and sensitivity to detection of beam properties for different electrode geometries and MLC shapes. Results were dependent on MLC field shape and the leaf position within the active volume. The accuracy of determination of leaf positions were in the sub-mm range (up to 0.25–1 mm). Additionally, detector sensitivity was quantified by simulating ions/pulse delivered with a radiation transport deterministic computation in 1D in CEPXS/ONEDANT. For a 6 MV linac pulse, signal amplitude per pulse was estimated to be in the lower pA to fA range. We computationally demonstrated feasibility of the remote sensing detector capable of measuring beam parameters such as MLC leaf positions and dose range for each pulse. Future work should focus on optimizing the electrode geometry to increase sensitivity and better reconstruction algorithms to provide more accurate solutions of the inverse problem.

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23

Ramaswami, Kieran O., Richard J. Curry, Ian Hinder, Robert E. Johanson e Safa O. Kasap. "Fluctuations in the collected charge in integrating photoconductive detectors under small and large signals: the variance problem". Journal of Physics D: Applied Physics 55, n.º 34 (9 de junho de 2022): 345102. http://dx.doi.org/10.1088/1361-6463/ac6e9c.

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Abstract Charge collection efficiency (CE) η 0 under small signal conditions, corresponding to a uniform field in the detector medium, has been widely used in evaluating the performance of photoconductive detectors. The present paper answers the question, ‘What is the variance of the collected charge in an integrating detector as a function of photoinjection level and what are the errors if we continue to use the small signal equations?’ The variance σ 0 2 in η 0 under small signals has been theoretically derived in the literature and has been a key factor in the detective quantum efficiency modeling of integrating detectors based on various semiconductors. σ 0 2 is a noise source and can degrade the detector performance under incomplete charge collection. The statistical variance σ 0 2 in the CE η 0, under small signals and the variance σ r 2 in the CE ηr under an arbitrary injection level r (injected charge divided by charge on the electrodes) have been studied using the Monte Carlo simulation model developed in this work to evaluate the difference between σ r 2 and σ 0 2 from small to large signals. Initial injection of electron and hole pairs and their subsequent transport and trapping in the presence of an electric field, which is calculated from the Poisson equation, is used to calculate the photocurrent. Each injected carrier is tracked as it moves in the semiconductor until it is either trapped or reaches the collection electrode. Trapped carriers do not contribute to the photocurrent but continue to contribute to the field through the Poisson equation. The instantaneous photocurrent i ph(t) is calculated from the drift of the free carriers through the Shockley–Ramo theorem. i ph(t) is integrated over the duration of the photocurrent to calculate the total collected charge and hence the CE ηr . The variance σ r 2 in ηr is found from multiple simulations of ηr . The ηr and σ r 2 have been generated over varying charge injection ratios r, the electron and hole ranges μτ, mean photoinjection depths δ and drift mobility ratios b. At full injection, the deviation Δ σ r 2 of the CE variance σ r 2 from the uniform field case σ 0 2 ( i . e . Δ σ r 2 = σ r 2 − σ 0 2 ) may be as much as 40% larger or 20% lower than the small signal model prediction. This study provides the extent of errors involved in the variance of the CE in non-uniform fields and quantifies the increase in errors that can occur in high injection cases. In practice, typical injection ratios are less than 0.2, which means that the magnitude of percentage error Δ σ r 2 / σ 0 2 is less than 5%.

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24

Hui, Aaron. "Resolving the Corbino Shockley-Ramo paradox for hydrodynamic current noise". Physical Review Research 6, n.º 4 (9 de dezembro de 2024). https://doi.org/10.1103/physrevresearch.6.043248.

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Johnson noise thermometry enables direct measurement of the electron temperature, a valuable probe of many-body systems. Practical use of this technique calls for nonequilibrium generalizations of the Johnson-Nyquist theorem. For a hydrodynamic Corbino device, however, a naive use of the Shockley-Ramo theorem alongside the “Corbino paradox” leads to yet another paradox: current noise through the contacts would seem to be completely insensitive to bulk fluctuations. In this work, we resolve the unphysical “Corbino Shockley-Ramo paradox” by correctly formulating the hydrodynamic Shockley-Ramo problem. This allows us to properly formulate the problem of current noise in a hydrodynamic multiterminal device of arbitrary geometry, as well as validate a previously unjustified assumption for rectangular geometry results. As an example, we compute the Johnson noise in a hydrodynamic Corbino device, where we find a suppression of Johnson noise with magnetic field. This unusual characteristic serves as a qualitative signature of viscous hydrodynamic behavior. Published by the American Physical Society 2024

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25

Song, Justin C. W., e Leonid S. Levitov. "Shockley-Ramo theorem and long-range photocurrent response in gapless materials". Physical Review B 90, n.º 7 (19 de agosto de 2014). http://dx.doi.org/10.1103/physrevb.90.075415.

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26

Seifert, Paul, Marinus Kundinger, Gang Shi, Xiaoyue He, Kehui Wu, Yongqing Li, Alexander Holleitner e Christoph Kastl. "Quantized Conductance in Topological Insulators Revealed by the Shockley-Ramo Theorem". Physical Review Letters 122, n.º 14 (12 de abril de 2019). http://dx.doi.org/10.1103/physrevlett.122.146804.

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27

Neyts, K., J. Beeckman e F. Beunis. "Quasistationary current contributions in electronic devices". Opto-Electronics Review 15, n.º 1 (1 de janeiro de 2007). http://dx.doi.org/10.2478/s11772-006-0054-5.

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AbstractIn an electronic device, the current supplied to the electrodes is related to different types of processes inside the device: current density, change in spontaneous polarization, and change in dielectric properties. Two expressions for the electrode current are derived: one is based on the time derivative of the Shockley-Ramo theorem, the other on the time derivative of the dielectric tensor. This result is illustrated for a switching liquid crystal device and a two-dimensional flux tube.

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28

Schötz, Johannes, Ancyline Maliakkal, Johannes Blöchl, Dmitry Zimin, Zilong Wang, Philipp Rosenberger, Meshaal Alharbi et al. "The emergence of macroscopic currents in photoconductive sampling of optical fields". Nature Communications 13, n.º 1 (18 de fevereiro de 2022). http://dx.doi.org/10.1038/s41467-022-28412-7.

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AbstractPhotoconductive field sampling enables petahertz-domain optoelectronic applications that advance our understanding of light-matter interaction. Despite the growing importance of ultrafast photoconductive measurements, a rigorous model for connecting the microscopic electron dynamics to the macroscopic external signal is lacking. This has caused conflicting interpretations about the origin of macroscopic currents. Here, we present systematic experimental studies on the signal formation in gas-phase photoconductive sampling. Our theoretical model, based on the Ramo–Shockley-theorem, overcomes the previously introduced artificial separation into dipole and current contributions. Extensive numerical particle-in-cell-type simulations permit a quantitative comparison with experimental results and help to identify the roles of electron-neutral scattering and mean-field charge interactions. The results show that the heuristic models utilized so far are valid only in a limited range and are affected by macroscopic effects. Our approach can aid in the design of more sensitive and more efficient photoconductive devices.

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