Artigos de revistas sobre o tema "Pre amorphization"
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Wen, D. S., J. Liu, C. M. Osburn e J. J. Wortman. "Interface Traps Caused by Ge Pre‐Amorphization". Journal of The Electrochemical Society 132, n.º 10 (1 de outubro de 1985): 2514–16. http://dx.doi.org/10.1149/1.2113613.
Texto completo da fonteSchreutelkamp, R. J., J. S. Custer, J. R. Liefting, W. X. Lu e F. W. Saris. "Pre-amorphization damage in ion-implanted silicon". Materials Science Reports 6, n.º 7-8 (agosto de 1991): 275–366. http://dx.doi.org/10.1016/0920-2307(91)90001-4.
Texto completo da fonteAndrzejewski, M., N. Casati e A. Katrusiak. "Reversible pressure pre-amorphization of a piezochromic metal–organic framework". Dalton Transactions 46, n.º 43 (2017): 14795–803. http://dx.doi.org/10.1039/c7dt02511d.
Texto completo da fonteCellini, C., A. Carnera, M. Berti, A. Gasparotto, D. Steer, M. Servidori e S. Milita. "Pre-amorphization damage study in as-implanted silicon". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 96, n.º 1-2 (março de 1995): 227–31. http://dx.doi.org/10.1016/0168-583x(94)00488-9.
Texto completo da fonteHempel, Nele-Johanna, Matthias M. Knopp, Ragna Berthelsen e Korbinian Löbmann. "Convection-Induced vs. Microwave Radiation-Induced in situ Drug Amorphization". Molecules 25, n.º 5 (27 de fevereiro de 2020): 1068. http://dx.doi.org/10.3390/molecules25051068.
Texto completo da fonteMurakami, Y., I. Tsunoda, H. Kido, A. Kenjo, T. Sadoh, M. Miyao e T. Yoshitake. "Enhanced solid-phase growth of β-FeSi2 by pre-amorphization". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 206 (maio de 2003): 304–7. http://dx.doi.org/10.1016/s0168-583x(03)00750-x.
Texto completo da fonteAzarov, A. Yu, A. I. Titov e S. O. Kucheyev. "Effect of pre-existing disorder on surface amorphization in GaN". Journal of Applied Physics 108, n.º 3 (agosto de 2010): 033505. http://dx.doi.org/10.1063/1.3462380.
Texto completo da fonteLi, Hong-Jyh, Peter Zeitzoff, Larry Larson e Sanjay Banerjee. "B diffusion in Si with pre-amorphization of different species". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 22, n.º 5 (2004): 2380. http://dx.doi.org/10.1116/1.1795250.
Texto completo da fonteDelwail, C., S. Joblot, F. Mazen, F. Abbate, L. Lachal, F. Milesi, M. Bertoglio et al. "Impact of the pre amorphization by Ge implantation on Ni0.9Pt0.1 silicide". Microelectronic Engineering 254 (fevereiro de 2022): 111705. http://dx.doi.org/10.1016/j.mee.2021.111705.
Texto completo da fonteFelch, S. B., H. Graoui, G. Tsai e A. Mayur. "Optimization of pre-amorphization and dopant implant conditions for advanced annealing". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 237, n.º 1-2 (agosto de 2005): 35–40. http://dx.doi.org/10.1016/j.nimb.2005.04.075.
Texto completo da fonteSasaki, Y., C. G. Jin, K. Okashita, H. Tamura, H. Ito, B. Mizuno, H. Sauddin et al. "New method of Plasma doping with in-situ Helium pre-amorphization". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 237, n.º 1-2 (agosto de 2005): 41–45. http://dx.doi.org/10.1016/j.nimb.2005.04.109.
Texto completo da fontePark, Soon Yeol, Kun-Sik Sung e Taeyoung Won. "Kinetic Monte Carlo Study on Boron Diffusion with Carbon Pre-implantation after a Pre-amorphization Process". Journal of the Korean Physical Society 58, n.º 5(1) (13 de maio de 2011): 1434–38. http://dx.doi.org/10.3938/jkps.58.1434.
Texto completo da fonteQuintero, A., F. Mazen, P. Gergaud, N. Bernier, J. M. Hartmann, V. Reboud, E. Cassan e Ph Rodriguez. "Enhanced thermal stability of Ni/GeSn system using pre-amorphization by implantation". Journal of Applied Physics 129, n.º 11 (21 de março de 2021): 115302. http://dx.doi.org/10.1063/5.0038253.
Texto completo da fonteSiegrist, Marco E., Michael Siegfried e Jörg F. Löffler. "High-purity amorphous Zr52.5Cu17.9Ni14.6Al10Ti5 powders via mechanical amorphization of crystalline pre-alloys". Materials Science and Engineering: A 418, n.º 1-2 (fevereiro de 2006): 236–40. http://dx.doi.org/10.1016/j.msea.2005.11.024.
Texto completo da fonteSchreutelkamp, R. J., J. S. Custer, J. R. Liefting, F. W. Saris, W. X. Lu, B. X. Zhang e Z. L. Wang. "Pre-amorphization damage in Si(100) implanted with high mass MeV ions". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 62, n.º 3 (janeiro de 1992): 372–76. http://dx.doi.org/10.1016/0168-583x(92)95259-t.
Texto completo da fontePark, Soonyeol, Bumgoo Cho, Seungsu Yang e Taeyoung Won. "Kinetic Monte Carlo (kMC) Simulation of Carbon Co-Implant on Pre-Amorphization Process". Journal of Nanoscience and Nanotechnology 10, n.º 5 (1 de maio de 2010): 3600–3603. http://dx.doi.org/10.1166/jnn.2010.2263.
Texto completo da fonteKim, Joong-sik, e Taeyoung Won. "Atomistic modelling for boron diffusion profile in silicon posterior to germanium pre-amorphization". Microelectronic Engineering 84, n.º 5-8 (maio de 2007): 1556–61. http://dx.doi.org/10.1016/j.mee.2007.01.254.
Texto completo da fontePark, Soon-Yeol, Young-Kyu Kim e Taeyoung Won. "Kinetic Monte Carlo study on boron diffusion posterior to pre-amorphization implant process". Microelectronic Engineering 86, n.º 3 (março de 2009): 430–33. http://dx.doi.org/10.1016/j.mee.2008.08.010.
Texto completo da fonteSimoen, E., G. Brouwers, A. Satta, M. L. David, F. Pailloux, B. Parmentier, T. Clarysse, J. Goossens, W. Vandervorst e M. Meuris. "Shallow boron implantations in Ge and the role of the pre-amorphization depth". Materials Science in Semiconductor Processing 11, n.º 5-6 (outubro de 2008): 368–71. http://dx.doi.org/10.1016/j.mssp.2008.09.006.
Texto completo da fontePark, Soon-Yeol, Young-Kyu Kim e Taeyoung Won. "Investigation of boron diffusion after pre-amorphization implant with kinetic Monte Carlo approach". Journal of Computational Electronics 7, n.º 3 (21 de março de 2008): 419–22. http://dx.doi.org/10.1007/s10825-008-0236-0.
Texto completo da fonteMao, Shujuan, Guilei Wang, Jing Xu, Dan Zhang, Xue Luo, Wenwu Wang, Dapeng Chen et al. "Improved Ti germanosilicidation by Ge pre-amorphization implantation (PAI) for advanced contact technologies". Microelectronic Engineering 201 (dezembro de 2018): 1–5. http://dx.doi.org/10.1016/j.mee.2018.09.006.
Texto completo da fontePark, Soon-Yeol, e Taeyoung Won. "Impact of Carbon Co-Implant on the Pre-Amorphization Process: Kinetic Monte Carlo (KMC)". Journal of Computational and Theoretical Nanoscience 6, n.º 11 (1 de novembro de 2009): 2423–26. http://dx.doi.org/10.1166/jctn.2009.1301.
Texto completo da fonteYu, Min, Rong Wang, Huihui Ji, Ru Huang, Xing Zhang, Yangyuan Wang, Jinyu Zhang e Hideki Oka. "Roughness of amorphous/crystalline interface in pre-amorphization implantation: Molecular dynamic simulation and modeling". Microelectronic Engineering 81, n.º 1 (julho de 2005): 162–67. http://dx.doi.org/10.1016/j.mee.2005.05.003.
Texto completo da fonteMurakami, H., S. Hamada, T. Ono, K. Hashimoto, A. Ohta, H. Hanafusa, S. Higashi e S. Miyazaki. "Pre-Amorphization and Low-Temperature Implantation for Efficient Activation of Implanted As in Ge(100)". ECS Transactions 64, n.º 6 (12 de agosto de 2014): 423–29. http://dx.doi.org/10.1149/06406.0423ecst.
Texto completo da fonteTan, E. J., K. L. Pey, D. Z. Chi, P. S. Lee e L. J. Tang. "Improved electrical performance of erbium silicide Schottky diodes formed by Pre-RTA amorphization of Si". IEEE Electron Device Letters 27, n.º 2 (fevereiro de 2006): 93–95. http://dx.doi.org/10.1109/led.2005.863142.
Texto completo da fonteCheng, Jung-Chien, Jia-En Lee e Bing-Yue Tsui. "Schottky barrier diodes isolated by local oxidation of SiC (LOCOSiC) using pre-amorphization implantation technology". Solid-State Electronics 171 (setembro de 2020): 107834. http://dx.doi.org/10.1016/j.sse.2020.107834.
Texto completo da fonteLi, Zhong-Hua, Yu-Long Jiang, Run-Ling Li, Yan-Wei Zhang e Yong-Feng Cao. "Performance Improvement by Cold Xe Pre-Amorphization Implant for Nickel Silicidation of 28-nm PMOSFET". IEEE Electron Device Letters 40, n.º 5 (maio de 2019): 777–79. http://dx.doi.org/10.1109/led.2019.2907688.
Texto completo da fonteRyu, Ho Jin, Yeon Soo Kim, G. L. Hofman, J. Rest, Jong Man Park e Chang Kyu Kim. "Radiation-Induced Recrystallization of U-Mo Fuel Particles and Radiation-Induced Amorphization of Interaction Products in U-Mo/Al Dispersion Fuel". Materials Science Forum 558-559 (outubro de 2007): 319–22. http://dx.doi.org/10.4028/www.scientific.net/msf.558-559.319.
Texto completo da fontePark, Soon-Yeol, Bum-Goo Cho, Seung-Su Yang e Taeyoung Won. "Kinetic Monte Carlo (kMC) Study of the Effect of CarbonCo-implantation on the Pre-amorphization Process". Journal of the Korean Physical Society 55, n.º 1 (15 de julho de 2009): 331–35. http://dx.doi.org/10.3938/jkps.55.331.
Texto completo da fonteBae, Jong-Uk, Dong Kyun Sohn, Ji-Soo Park, Byung Hak Lee, Chang Hee Han e Jin Won Park. "Effect of pre-amorphization of polycrystalline silicon on agglomeration of TiSi2 in subquarter micron Si lines". Journal of Applied Physics 86, n.º 9 (novembro de 1999): 4943–48. http://dx.doi.org/10.1063/1.371523.
Texto completo da fonteKim, Seong-Dong, Cheol-Min Park e Jason C. S. Woo. "Formation and control of box-shaped ultra-shallow junction using laser annealing and pre-amorphization implantation". Solid-State Electronics 49, n.º 1 (janeiro de 2005): 131–35. http://dx.doi.org/10.1016/j.sse.2004.07.008.
Texto completo da fonteBIBIĆ, N., V. MILINOVIĆ, M. MILOSAVLJEVIĆ, F. SCHREMPEL, M. ŠILJEGOVIĆ e K. P. LIEB. "Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers". Journal of Microscopy 232, n.º 3 (dezembro de 2008): 539–41. http://dx.doi.org/10.1111/j.1365-2818.2008.02143.x.
Texto completo da fonteXu, Genbao, W. A. Chiou, M. Meshii e P. R. Okamoto. "HREM study of amorphization of CuTi irradiated by 1 MeV electron". Proceedings, annual meeting, Electron Microscopy Society of America 48, n.º 4 (agosto de 1990): 124–25. http://dx.doi.org/10.1017/s0424820100173753.
Texto completo da fontePaul, Silke, e Wilfried Lerch. "Implant Annealing – An Evolution from Soak over Spike to Millisecond Annealing". Materials Science Forum 573-574 (março de 2008): 207–28. http://dx.doi.org/10.4028/www.scientific.net/msf.573-574.207.
Texto completo da fonteZhang, Dan, Jing Xu, Jianfeng Gao, Anyan Du, Jing Zhang, Shujuan Mao, Yang Men et al. "Impact of Ge pre-amorphization implantation on Co/Co-Ti/n+-Si contacts in advanced Co interconnects". Japanese Journal of Applied Physics 59, SL (21 de maio de 2020): SLLB01. http://dx.doi.org/10.35848/1347-4065/ab922f.
Texto completo da fonteOzcan, Ahmet S., Donald Wall, Jean Jordan-Sweet e Christian Lavoie. "Effects of temperature dependent pre-amorphization implantation on NiPt silicide formation and thermal stability on Si(100)". Applied Physics Letters 102, n.º 17 (29 de abril de 2013): 172107. http://dx.doi.org/10.1063/1.4801928.
Texto completo da fonteGhanad Tavakoli, Shahram, Sungkweon Baek e Hyunsang Hwang. "Effect of germanium pre-amorphization on solid-phase epitaxial regrowth of antimony and arsenic ion-implanted silicon". Materials Science and Engineering: B 114-115 (dezembro de 2004): 376–80. http://dx.doi.org/10.1016/j.mseb.2004.07.067.
Texto completo da fonteSahoo, Deepak Ranjan, Izabela Szlufarska, Dane Morgan e Narasimhan Swaminathan. "Role of pre-existing point defects on primary damage production and amorphization in silicon carbide (β-SiC)". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 414 (janeiro de 2018): 45–60. http://dx.doi.org/10.1016/j.nimb.2017.10.011.
Texto completo da fonteTitov, A. I., K. V. Karabeshkin, A. I. Struchkov, P. A. Karaseov e A. Azarov. "Radiation tolerance of GaN: the balance between radiation-stimulated defect annealing and defect stabilization by implanted atoms". Journal of Physics D: Applied Physics 55, n.º 17 (31 de janeiro de 2022): 175103. http://dx.doi.org/10.1088/1361-6463/ac4a38.
Texto completo da fonteGuillemin, S., P. Gergaud, N. Bernier, L. Lachal, F. Mazen, A. Jannaud, F. Nemouchi e Ph Rodriguez. "Influence of dual Ge/C pre-amorphization implantation on the Ni1−Pt Si phase nucleation and growth mechanisms". Microelectronic Engineering 244-246 (maio de 2021): 111571. http://dx.doi.org/10.1016/j.mee.2021.111571.
Texto completo da fonteLuo, Xue, Guilei Wang, Jing Xu, Ningyuan Duan, Shujuan Mao, Shi Liu, Junfeng Li et al. "Impact of Ge pre-amorphization implantation on forming ultrathin TiGe x on both n- and p-Ge substrate". Japanese Journal of Applied Physics 57, n.º 7S2 (20 de junho de 2018): 07MA02. http://dx.doi.org/10.7567/jjap.57.07ma02.
Texto completo da fonteOhuchi, Kazuya, Katsura Miyashita, Atsushi Murakoshi, Hisao Yoshimura, Kyoichi Suguro e Yoshiaki Toyoshima. "Improved Ti Self-Aligned Silicide Technology Using High Dose Ge Pre-Amorphization for 0.10 µm CMOS and Beyond". Japanese Journal of Applied Physics 38, Part 1, No. 4B (30 de abril de 1999): 2238–42. http://dx.doi.org/10.1143/jjap.38.2238.
Texto completo da fonteQiuxia Xu, Xiaofong Duan, He Qian, Haihua Liu, H. Li, Zhensheng Han, Ming Liu e Wenfang Gao. "Hole mobility enhancement of pMOSFETs with strain channel induced by Ge pre-amorphization implantation for source/drain extension". IEEE Electron Device Letters 27, n.º 3 (março de 2006): 179–81. http://dx.doi.org/10.1109/led.2006.870248.
Texto completo da fonteChou, Chuan-Pu, Chin-Yu Chen, Kuen-Yi Chen, Shih-Chieh Teng, Jia-Hong Huang e Yung-Hsien Wu. "Improved Current Drivability for Sub-20-nm N-FinFETs by Ge Pre-Amorphization in Contact With Reverse Retrograde Profile". IEEE Electron Device Letters 38, n.º 3 (março de 2017): 299–302. http://dx.doi.org/10.1109/led.2017.2647957.
Texto completo da fonteFerdov, Stanislav. "Interzeolite Transformation from FAU-to-EDI Type of Zeolite". Molecules 29, n.º 8 (11 de abril de 2024): 1744. http://dx.doi.org/10.3390/molecules29081744.
Texto completo da fonteChuang, Hung-Ming, Kong-Beng Thei, Sheng-Fu Tsai, Chun-Tsen Lu, Xin-Da Liao, Kuan-Ming Lee e Wen-Chau Liu. "Comparative study of double ion implant Ti salicide and pre-amorphization implant Co salicide for ultra-large-scale integration applications". Semiconductor Science and Technology 17, n.º 10 (4 de setembro de 2002): 1075–80. http://dx.doi.org/10.1088/0268-1242/17/10/308.
Texto completo da fonteChou, Chuan-Pu, Chin-Yu Chen, Kuen-Yi Chen, Shih-Chieh Teng e Yung-Hsien Wu. "Improved leakage current and device uniformity for sub-20 nm N-FinFETs by cryogenic Ge pre-amorphization implant in contact". Microelectronic Engineering 178 (junho de 2017): 137–40. http://dx.doi.org/10.1016/j.mee.2017.05.031.
Texto completo da fonteAbd Elbary, Ahmed, Howida K. Ibrahim e Balquees S. Hazaa. "Formulation and evaluation of colon targeted tablets containing simvastatin solid dispersion". Drugs and Therapy Studies 1, n.º 1 (19 de dezembro de 2011): 16. http://dx.doi.org/10.4081/dts.2011.e16.
Texto completo da fonteObada, David O., David Dodoo-Arhin, Muhammad Dauda, Fatai O. Anafi, Abdulkarim S. Ahmed, Olusegun A. Ajayi e Ibraheem A. Samotu. "Effect of mechanical activation on mullite formation in an alumina-silica ceramics system at lower temperature". World Journal of Engineering 13, n.º 4 (1 de agosto de 2016): 288–93. http://dx.doi.org/10.1108/wje-08-2016-039.
Texto completo da fonteBinti Aid, Siti Rahmah, Satoru Matsumoto, Toshiharu Suzuki, Gensyu Fuse e Toshihiro Nakazawa. "Boron Diffusion Behavior During the Formation of Shallow p+/n Junction Using the Combination of Ge Pre-amorphization Implantation, Pre-Annealing RTA and Post-Annealing Non-Melt Excimer Laser(NLA) Processes". ECS Transactions 19, n.º 1 (18 de dezembro de 2019): 71–77. http://dx.doi.org/10.1149/1.3118932.
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