Literatura científica selecionada sobre o tema "Pré amorphisation"
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Artigos de revistas sobre o assunto "Pré amorphisation"
Cristiano, Fuccio, El Mehdi Bazizi, Pier Francesco Fazzini, Simona Boninelli, Ray Duffy, Ardechir Pakfar, Silke Paul e Wilfried Lerch. "Extended Defects Evolution in Pre-Amorphised Silicon after Millisecond Flash Anneals". Materials Science Forum 573-574 (março de 2008): 269–77. http://dx.doi.org/10.4028/www.scientific.net/msf.573-574.269.
Texto completo da fonteThornton, J., K. C. Paus, R. P. Webb, I. H. Wilson e G. R. Booker. "The production of excess interstitials by pre-amorphisation". Journal of Physics D: Applied Physics 21, n.º 2 (14 de fevereiro de 1988): 334–38. http://dx.doi.org/10.1088/0022-3727/21/2/013.
Texto completo da fonteSimoen, Eddy, A. Satta, Marc Meuris, Tom Janssens, T. Clarysse, A. Benedetti, C. Demeurisse et al. "Defect Removal, Dopant Diffusion and Activation Issues in Ion-Implanted Shallow Junctions Fabricated in Crystalline Germanium Substrates". Solid State Phenomena 108-109 (dezembro de 2005): 691–96. http://dx.doi.org/10.4028/www.scientific.net/ssp.108-109.691.
Texto completo da fonteThornton, J., e C. Hill. "The evolution and disappearance of the dislocation loops associated with pre-amorphisation". Semiconductor Science and Technology 4, n.º 1 (1 de janeiro de 1989): 53–56. http://dx.doi.org/10.1088/0268-1242/4/1/010.
Texto completo da fonteGennaro, S., M. Barozzi, M. Bersani, B. J. Sealy e R. Gwilliam. "Diffusion of indium implanted in silicon: The effect of the pre-amorphisation treatment and of the presence of carbon". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 237, n.º 1-2 (agosto de 2005): 88–92. http://dx.doi.org/10.1016/j.nimb.2005.04.083.
Texto completo da fonteSmith, Katherine L., Gregory R. Lumpkin, Mark G. Blackford e Eric R. Vance. "Amorphisation of Perovskite: the Effectofcomposition and Pre-Existing Cation Vacancies". MRS Proceedings 556 (1999). http://dx.doi.org/10.1557/proc-556-1185.
Texto completo da fonteSmith, Katherine L., Gregory R. Lumpkin, Mark G. Blackford e Eric R. Vance. "Amorphisation of Perovskite: the Effect of Composition and Pre-Existing Cation Vacancies". MRS Proceedings 540 (1998). http://dx.doi.org/10.1557/proc-540-323.
Texto completo da fonteAjiboye, Adejumoke Lara, Amélie Jacopin, Claudia Mattern, Uttom Nandi, Andrew Hurt e Vivek Trivedi. "Dissolution Improvement of Progesterone and Testosterone via Impregnation on Mesoporous Silica Using Supercritical Carbon Dioxide". AAPS PharmSciTech 23, n.º 8 (16 de novembro de 2022). http://dx.doi.org/10.1208/s12249-022-02453-z.
Texto completo da fonteLindsay, Richard, Bartlomiej J. Pawlak, Peter Stolk e Karen Maex. "Optimisation of Junctions formed by Solid Phase Epitaxial Regrowth for sub-70nm CMOS". MRS Proceedings 717 (2002). http://dx.doi.org/10.1557/proc-717-c2.1.
Texto completo da fonteTeses / dissertações sobre o assunto "Pré amorphisation"
Delwail, Clara. "Etude de l'impact de la pré-amorphisation par implantation ionique pour l'optimisation des contacts siliciurés". Electronic Thesis or Diss., Aix-Marseille, 2022. http://theses.univ-amu.fr.lama.univ-amu.fr/220601_DELWAIL_838bz740xvto337mo443f_TH.pdf.
Texto completo da fonteNickel silicide alloyed with 10% of Pt is used to form the contacts of the MOS transistors for the most advanced technology nodes. Ni(10%Pt) silicide presents important advantages. However, the Ni(10%Pt) silicide still presents some drawbacks related to the morphological and thermal stability of the NiSi (Pt). Moreover, a decreased resistivity is required to improve the electrical performances. In this work the impact of the Ge PAI on the silicidation and the NiSi properties is presented. The implantation conditions have been determined to vary the relative position of the a-c interface with the silicide growth front and the Ge concentration. The silicide growth has been studied by two approaches. The first one, puts forward the silicide phase sequence and kinetics using XRD in-situ analysis which is performed at a relatively slow anneal rate. The second one, by rapid thermal anneals (RTA) and XRR measurements, allows to plot the silicide thickness evolution for a fast anneal rate which is comparable to the one used in industrial silicide process. The kinetic of growth of the first silicide, studied by RTA, are compared to several growth models. Analyses show that the first silicide is amorphous for all the samples. Finally, the silicide properties were determined as a function of the PAI conditions. Influences of the amorphous silicon substrate on the growth rate of the first silicide and the NiSi nucleation, roughness, grain growth and texture are discussed. By considering the amorphous thickness and the Ge concentration, the results show the optimal implantation conditions that allow minimizing the resistivity. Perspectives about PAI process optimization are discussed
Trabalhos de conferências sobre o assunto "Pré amorphisation"
Meyssen, V. M. H., P. A. Stolk, J. P. van Zijl, J. G. M. van Berkum e W. G. van der Wijgert. "Using Ge pre-amorphisation and spike annealing for optimizing shallow junctions in deep-submicron CMOS". In 30th European Solid-State Device Research Conference. IEEE, 2000. http://dx.doi.org/10.1109/essderc.2000.194798.
Texto completo da fonte