Literatura científica selecionada sobre o tema "Phénomènes quantiques"
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Artigos de revistas sobre o assunto "Phénomènes quantiques"
Velanes, David. "La philosophie de la mécanique quantique de Gaston Bachelard". Griot : Revista de Filosofia 21, n.º 1 (1 de fevereiro de 2021): 180–94. http://dx.doi.org/10.31977/grirfi.v21i1.2198.
Texto completo da fonteBouyer, Philippe. ". Mesurer l’accélération avec des ondes de matière : de la gravimétrie à la navigation". Photoniques, n.º 88 (setembro de 2017): 42–44. http://dx.doi.org/10.1051/photon/20178842.
Texto completo da fonteVan Helden, Alice. "interprétation relationnelle de la physique quantique". Revue des questions scientifiques 193, n.º 1-2 (1 de janeiro de 2022): 95–116. http://dx.doi.org/10.14428/qs.v193i1-2.70223.
Texto completo da fonteMartinez Thomas, Monique, Agnès Surbezy e Fabrice Corrons. "Le théâtre quantique : ordre et désordre dans l’Espagne postmoderne". L’Annuaire théâtral, n.º 43-44 (25 de maio de 2010): 59–76. http://dx.doi.org/10.7202/041706ar.
Texto completo da fonteZyss, Joseph. "La génération de second-harmonique : un domaine ancien et riche d’avenir". Photoniques, n.º 114 (2022): 51–56. http://dx.doi.org/10.1051/photon/202111451.
Texto completo da fonteLadieu, François. "La Physique : une science exacte où règne l’indétermination". Revue française de psychanalyse Vol. 88, n.º 2 (30 de abril de 2024): 37–47. http://dx.doi.org/10.3917/rfp.882.0037.
Texto completo da fonteCarrive, Laurent. "De la réalité des modèles et des théories". Acta Europeana Systemica 4 (14 de julho de 2020): 89–98. http://dx.doi.org/10.14428/aes.v4i1.57283.
Texto completo da fonteSacuto, Alain, Yann Galais, Maximilien Cazayous e Sarah Houver. "La supraconductivité à haute température dans les oxydes de cuivre : où en est-on ?" Reflets de la physique, n.º 70 (outubro de 2021): 4–17. http://dx.doi.org/10.1051/refdp/202170004.
Texto completo da fonteLarangé, Daniel S. "Neurosémiotique et bouddhisme". Protée 39, n.º 2 (16 de dezembro de 2011): 31–44. http://dx.doi.org/10.7202/1007166ar.
Texto completo da fonteVitrac, Richard. "La théorie de la relativité cognitive et systémique". Acta Europeana Systemica 7 (11 de julho de 2020): 179–96. http://dx.doi.org/10.14428/aes.v7i1.56733.
Texto completo da fonteTeses / dissertações sobre o assunto "Phénomènes quantiques"
Le, Bihan Soazig. "Comprendre les phénomènes quantiques". Thesis, Nancy 2, 2008. http://www.theses.fr/2008NAN21008/document.
Texto completo da fonteUnavailable
Rech, Jérôme. "Phénomènes quantiques macroscopiques dans les systèmes d'électrons fortement corrélés". Phd thesis, Université Paris Sud - Paris XI, 2006. http://tel.archives-ouvertes.fr/tel-00197118.
Texto completo da fonteRestrepo, Cadavid Juliana. "Décohérence et thermalisation des systèmes quantiques". Paris 6, 2011. http://www.theses.fr/2011PA066394.
Texto completo da fonteCarosella, Francesca. "Étude théorique des phénomènes de transport électronique dans les puits quantiques AlGaN/GaN". Lille 1, 2005. http://www.theses.fr/2005LIL10125.
Texto completo da fonteNous avons ensuite abordé l'étude des mécanismes de diffusion intrinsèques, en établissant pour ces systèmes bidimensionnels le potentiel diffuseur associé aux pseudo particules hybrides, résultant de l'interaction entre les phonons optiques et les plasmons. Fort de cette base, qui a permis pour la première fois le calcul de la mobilité théorique maximum, nous avons pu enfin aborder l'étude des centres diffuseurs extrinsèques les plus déterminants Nous avons démontré qu'ils étaient liés à la présence de dislocations ainsi qu'à la qualité des interfaces présentant des rugosités (ou des fluctuations) liées aussi bien à leur structure géométrique qu'à la répartition hétérogène des charges d'interface La comparaison de nos résultats théoriques avec différents résultats expérimentaux a permis de démontrer que les dislocations introduisent des niveaux extrinsèques légers situés à environ 110 meV sous la bande de conduction de GaN et que leur potentiel détermine en grande partie la mobilité des échantillons contenant de faibles valeurs de densité de porteurs, alors que les mécanismes de rugosité, caractérisés par le biais d'un paramètre de corrélation, sont responsables de la chute des valeurs de mobilité dans le domaine des hautes densités de porteurs libres. Ces résultats devraient permettre d'affiner les méthodes de croissance cristalline selon le domaine de densité de porteurs qui sera choisi pour la réalisation des composants
Viale, Yannick. "Etude de boîtes quantiques de CdZnTe : processus de relaxation d'énergie et de phase". Université Louis Pasteur (Strasbourg) (1971-2008), 2004. https://publication-theses.unistra.fr/public/theses_doctorat/2004/VIALE_Yannick_2004.pdf.
Texto completo da fonteWe present a study of the electron-hole pair energy and phase relaxation processes in a CdTe/ZnTe heterostructure, in which quantum dots are embedded. CdZnTe quantums wells with a high Zinc concentration, separated by ZnTe barriers, contain islands with a high cadmium concentration. In photoluminescence excitation spectroscopy experiments, we evidence two types of electron hole pair relaxation processes. After being excited in the CdZnTe quantum well, the pairs relax their energy by emitting a cascade of longitudinal optical phonons until they are trapped in the quantum dots. Before their radiative recombination follows an intra-dot relaxation, which is attributed to a lattice polarization mechanism of the quantum dots. It is related to the coupling between the electronic and the vibrationals states. Both relaxation mechanisms are reinforced by the strong polar character of the chemical bond in II-VI compounds. Time resolved measurements of transmission variations in a pump-probe configuration allowed us to investigate the population dynamics of the electron-hole pairs during the relaxation process. We observe a relaxation time of about 2 ps for the longitudinal phonon emission cascade in the quantum well before a saturation of the quantum dot transition. We also measured an intra-box relaxation time of 25 ps. The comparison of various cascades allows us to estimate the emission time of a longitudinal optical phonon in the quantum well to be about 100 fs. In four waves mixing experiments, we observe oscillations that we attribute to quantum beats between excitonic and biexcitonic transitions. The dephasing times that we measure as function of the density of photons shows that excitons are strongly localized in the quantum dots. The excitonic dephasing time is much shorter than the radiative lifetime and is thus controlled by the intra-dot relaxation time
Giamarchi, Thierry. "Localisation et interactions dans les fluides quantiques unidimensionnels". Grenoble 2 : ANRT, 1987. http://catalogue.bnf.fr/ark:/12148/cb37605448p.
Texto completo da fonteAlrifai, Rim. "Fonctions optiques robustes dans des structures de guides d'onde : liens avec des phénomènes quantiques". Electronic Thesis or Diss., Université de Lorraine, 2022. http://www.theses.fr/2022LORR0087.
Texto completo da fonteWave propagation in coupled optical waveguides and population dynamics in quantum systems composed of coupled discrete levels share a common mathematical formalism related to the underlying Schrödinger equation. In the context of this thesis the key role is played by the relation between robust adiabatically evolving quantum systems and corresponding adiabatically evolving waveguide systems. In the optics case the robustness reflects in a strongly increased tolerance with respect to changes in wavelength (achromaticity), temperature, or unwanted variations in the waveguide parameters.Earlier works in our laboratory in the context of the above analogy were related to waveguides allowing propagation of the fundamental mode only and did not consider the possible propagation of both orthogonal polarization modes. In the present thesis we fill this gap by discussing ways for achieving broadband polarization separation as well as broadband mode conversions. The investigated systems are composed of three coupled waveguides with a spatial adiabatic evolution. In addition, we consider a third system where a dissipation in one of three waveguides allows to achieve ultra-broadband power splitting despite for the absence of any adiabatic evolution of the waveguide parameters.Integrated polarization beam splitters (PBS) play a significant role in many integrated photonic devices where the polarization state of light requires manipulation and important efforts are under way to make such a functionality as broadband as possible. Our proposal in this context involves a three-waveguides configuration with anisotropic refractive index either in the core or in the cladding and is inspired by the quantum STIRAP process (STImulated Raman Adiabatic Passage). Our analysis shows that an anisotropy ratio of 5 (ratio between the refractive index contrasts for the TM and TE waves) is sufficient for separating efficiently the two polarizations over a spectral range of ≈ 350 nm around the 1550 nm central wavelength. The bandwidth of such PBS increases by increasing the anisotropy factor and the central wavelength can be adjusted by modifying the waveguides.One of the ways presently envisaged for increasing the nearly saturated capacity of optical telecommunication systems relies on space division multiplexing, where signals are transmitted on different spatial modes of a multimode optical fiber. This kind of approach requires elements capable of demultiplexing the modes by separating and converting them. Our proof of concept in this context is based again on an adiabatic three-waveguide systems and permits conversion between a higher order mode and the fundamental mode (or vice-versa) over a wide spectral range. The underlying waveguide design is again analogous to the above quantum STIRAP process or in alternative to Adiabatic Elimination (AE) in which case the central waveguide is strongly detuned from the two others.As mentioned above, the third system studied in this thesis does not rely on adiabatically evolving waveguides but is related to the behavior of non-Hermitian quantum systems, specifically to quantum population transfer through a decaying intermediate state. Our approach is based on three parallel waveguides of which the central one is highly dissipating. It leads to ultra-broad band power division that has to be paid by a 50% overall loss if equal power is wished in the two output ports. Here the absence of the slow adiabatic variation allows for more compact systems, especially if the central waveguide is of the plasmonic type.The three systems that are discussed in this thesis show the great potential of quantum-inspired approaches for robust photonics, where tolerant, versatile and broadband functionalities are required. While devices of this kind may be used principally in classical integrated photonics, their use for single photon management in quantum optics is also an attractive perspective
Querlioz, Damien. "Phénomènes quantiques et décohérence dans les nano-dispositifs semiconducteurs : étude par une approche Wigner Monte Carlo". Paris 11, 2008. http://www.theses.fr/2008PA112218.
Texto completo da fonteThis work studies the quantum phenomena that appear in nanometer-scaled electron devices. To this aim, Monte Carlo type simulations based on the Wigner-Boltzmann equations are performed. After a presentation of general theory, this equation which allows including collision effects in a quantum transport simulation is proved. The new Wigner Monte Carlo approach to solving it is introduced, and is employed to simulate resonant tunneling diodes (RTD). The results are consistent with Green's functions based calculations and simple experiments. The theory of decoherence is then applied to interpret the results and understand the emergence of semi-classical behavior in nanodevices. Phonon-induced decoherence is compared to the quantum Brownian motion model. The transition between resonant and sequential transport through a quasi-bound state is analyzed. In a RTD, the transition from a quantum active region to semi-classical access regions is observed. Quantum phenomena in the shor test MOSFETs demonstrated in research labs are then studied. A hybrid regime is evidenced, where both quantum transport and collisions play a significant role. Degeneracy effects and decoherence experienced by electrons in MOSFETs are studied. Comparisons with experimental results are then performed. Finally, two studies concerning nanostructures considered for electron devices of the future (carbon nanotubes and graphene nanoribbons) are proposed
Lassoued, Saïda. "Modélisation de transistors a homo et hétéro-jonctions, compatibles avec une filière submicronique : influence de phénomènes quantiques". Lyon, INSA, 1998. http://www.theses.fr/1998ISAL0089.
Texto completo da fonteThe aim of this work is the study of a submicronic bi polar transistor, compatible with a silicon technology (BICMOS), developed by CNET lndustry (Meylan-France). First of all, we discuss with the doping level profiles. We develop a (co)diffusion modeling into the polysilicon and the monocrystalline silicon underneath. Then, we present static electrical characteristics such Gummel's ones, and dynamic measurements such as capacitances. We consider the effects of process on device parameters such as current gain and cut-off frequency. These characterizations point out the technological drawbacks concerning the device behavior. The core of the subject lies in developing a bidimensional device simulator dealing with the so-called drift-diffusion model. Moreover, we have to model the electrical transport through a very thin oxide (15 A) located between polysilicon and monosilicon, which increases the gain current by decreasing the hale current. Then we add the resolution of the Schroedinger equation to make the simulations fully numerical. The method used for this former one is a transfer matrix algorithm. Finally, we study a hetero junction transistor structure: a bipolar transistor with a SiGe-doped base. This structure gives high cut-off frequency specified for RF applications
Décanini, Yves. "Phénomènes de résonance et renormalisation en espace-temps courbe". Habilitation à diriger des recherches, Université Pascal Paoli, 2008. http://tel.archives-ouvertes.fr/tel-00609537.
Texto completo da fonteLivros sobre o assunto "Phénomènes quantiques"
France, Collège de, ed. De l'atome au matériau: Les phénomènes quantiques collectifs. Paris: Collège de France, 2010.
Encontre o texto completo da fonteFeynman, Richard Phillips. The Feynman lectures on physics: New Millenium Edition. New York: Basic Books, 2011.
Encontre o texto completo da fontePhysique Quantique À Partir de Zéro: Comprendre les Phénomènes Quantiques Qui Révèlent la Vérité Cachée de L'univers. Independently Published, 2022.
Encontre o texto completo da fonteThe Feynman Lectures on Physics Vol 1: Mainly Mechanics, Radiation, and Heat. Narosa Publishing House, 1986.
Encontre o texto completo da fonteCapítulos de livros sobre o assunto "Phénomènes quantiques"
Georges, Antoine. "De l’atome au matériau. Les phénomènes quantiques collectifs". In De l’atome au matériau. Les phénomènes quantiques collectifs. Collège de France, 2010. http://dx.doi.org/10.4000/books.cdf.337.
Texto completo da fonteCorvol, Pierre. "Présentation d’Antoine Georges". In De l’atome au matériau. Les phénomènes quantiques collectifs. Collège de France, 2010. http://dx.doi.org/10.4000/books.cdf.336.
Texto completo da fonte"12. Electrodynamique quantique". In Des phénomènes critiques aux champs de jauge, 485–544. EDP Sciences, 1998. http://dx.doi.org/10.1051/978-2-7598-0284-5.c015.
Texto completo da fonte"8. Intégrales de chemin en mécanique quantique et mécanique statistique". In Des phénomènes critiques aux champs de jauge, 317–50. EDP Sciences, 1998. http://dx.doi.org/10.1051/978-2-7598-0284-5.c011.
Texto completo da fontePaty, Michel. "Le concept d’état quantique : un nouveau regard sur d’anciens phénomènes". In Le déterminisme entre sciences et philosophie, 296. Editions Matériologiques, 2012. http://dx.doi.org/10.3917/edmat.pepin.2012.02.0296.
Texto completo da fonte