Artigos de revistas sobre o tema "Phase change memory GST"
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S. A.Aziz, M., F. H. M.Fauzi, Z. Mohamad e R. I. Alip. "The Effect of Channel Length on Phase Transition of Phase Change Memory". International Journal of Engineering & Technology 7, n.º 3.11 (21 de julho de 2018): 25. http://dx.doi.org/10.14419/ijet.v7i3.11.15923.
Texto completo da fonteGolovchak, R., Y. G. Choi, S. Kozyukhin, Yu Chigirinsky, A. Kovalskiy, P. Xiong-Skiba, J. Trimble, R. Pafchek e H. Jain. "Oxygen incorporation into GST phase-change memory matrix". Applied Surface Science 332 (março de 2015): 533–41. http://dx.doi.org/10.1016/j.apsusc.2015.01.203.
Texto completo da fonteBehrens, Mario, Andriy Lotnyk, Hagen Bryja, Jürgen W. Gerlach e Bernd Rauschenbach. "Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses". Materials 13, n.º 9 (1 de maio de 2020): 2082. http://dx.doi.org/10.3390/ma13092082.
Texto completo da fonteStern, Keren, Yair Keller, Christopher M. Neumann, Eric Pop e Eilam Yalon. "Temperature-dependent thermal resistance of phase change memory". Applied Physics Letters 120, n.º 11 (14 de março de 2022): 113501. http://dx.doi.org/10.1063/5.0081016.
Texto completo da fonteKim, Sung Soon, Jun Hyun Bae, Woo Hyuck Do, Kyun Ho Lee, Young Tae Kim, Young Kwan Park, Jeong Taek Kong e Hong Lim Lee. "Thermal Stress Model for Phase Change Random Access Memory". Solid State Phenomena 124-126 (junho de 2007): 37–40. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.37.
Texto completo da fonteRaeis-Hosseini, Niloufar, e Junsuk Rho. "Dual-Functional Nanoscale Devices Using Phase-Change Materials: A Reconfigurable Perfect Absorber with Nonvolatile Resistance-Change Memory Characteristics". Applied Sciences 9, n.º 3 (8 de fevereiro de 2019): 564. http://dx.doi.org/10.3390/app9030564.
Texto completo da fonteAgarwal, Satish C. "Role of potential fluctuations in phase-change GST memory devices". physica status solidi (b) 249, n.º 10 (17 de agosto de 2012): 1956–61. http://dx.doi.org/10.1002/pssb.201200362.
Texto completo da fonteXue, Yuan, Sannian Song, Xiaogang Chen, Shuai Yan, Shilong Lv, Tianjiao Xin e Zhitang Song. "Enhanced performance of phase change memory by grain size reduction". Journal of Materials Chemistry C 10, n.º 9 (2022): 3585–92. http://dx.doi.org/10.1039/d1tc06045g.
Texto completo da fontePacco, Antoine, Ju-Geng Lai, Pallavi Puttarame Gowda, Hanne De Coster, Jens Rip, Kurt Wostyn e Efrain Altamirano Sanchez. "Wet Chemical Recess Etching of Ge2Sb2Te5 for 3D PCRAM Memory Applications". ECS Meeting Abstracts MA2022-01, n.º 28 (7 de julho de 2022): 1262. http://dx.doi.org/10.1149/ma2022-01281262mtgabs.
Texto completo da fonteYin, You, e Sumio Hosaka. "Crystal Growth Suppression by N-Doping into Chalcogenide for Application to Next-Generation Phase Change Memory". Key Engineering Materials 497 (dezembro de 2011): 101–5. http://dx.doi.org/10.4028/www.scientific.net/kem.497.101.
Texto completo da fonteRen, W., M. Zhong, J. Dai, P. Mukundhan e M. Zhang. "Phase change memory alloys: GST cell array characterization using picosecond ultrasonics". Microelectronic Engineering 88, n.º 5 (maio de 2011): 822–26. http://dx.doi.org/10.1016/j.mee.2010.07.016.
Texto completo da fonteZhu, Yueqin, Zhonghua Zhang, Sannian Song, Huaqing Xie, Zhitang Song, Xiaoyun Li, Lanlan Shen, Le Li, Liangcai Wu e Bo Liu. "Ni-doped GST materials for high speed phase change memory applications". Materials Research Bulletin 64 (abril de 2015): 333–36. http://dx.doi.org/10.1016/j.materresbull.2015.01.016.
Texto completo da fontePan, Yuanchun, Zhen Li e Zhonglu Guo. "Lattice Thermal Conductivity of mGeTe•nSb2Te3 Phase-Change Materials: A First-Principles Study". Crystals 9, n.º 3 (7 de março de 2019): 136. http://dx.doi.org/10.3390/cryst9030136.
Texto completo da fonteWang, Miao, Yegang Lu, Xiang Shen, Guoxiang Wang, Jun Li, Shixun Dai, Sannian Song e Zhitang Song. "Effect of Sb2Se on phase change characteristics of Ge2Sb2Te5". CrystEngComm 17, n.º 26 (2015): 4871–76. http://dx.doi.org/10.1039/c5ce00656b.
Texto completo da fonteKim, JunHo, e Ki-Bong Song. "Simulation Study on Heat Conduction of a Nanoscale Phase-Change Random Access Memory Cell". Journal of Nanoscience and Nanotechnology 6, n.º 11 (1 de novembro de 2006): 3474–78. http://dx.doi.org/10.1166/jnn.2006.17963.
Texto completo da fonteLei, Xin-Qing, Jia-He Zhu, Da-Wei Wang e Wen-Sheng Zhao. "Design for Ultrahigh-Density Vertical Phase Change Memory: Proposal and Numerical Investigation". Electronics 11, n.º 12 (8 de junho de 2022): 1822. http://dx.doi.org/10.3390/electronics11121822.
Texto completo da fonteBartlett, Philip N., Sophie L. Benjamin, C. H. (Kees) de Groot, Andrew L. Hector, Ruomeng Huang, Andrew Jolleys, Gabriela P. Kissling et al. "Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge2Sb2Te5 phase change memory". Materials Horizons 2, n.º 4 (2015): 420–26. http://dx.doi.org/10.1039/c5mh00030k.
Texto completo da fonteLIAO, YUANBAO, JIAJIA WU, LING XU, FEI YANG, WENQING LIU, JUN XU, LIANGCAI WU, ZHONGYUAN MA e KUNJI CHEN. "FORMATION, STRUCTURE AND PROPERTIES OF HIGHLY ORDERED SUB-30-nm PHASE CHANGE MATERIALS (GST) NANOPARTICLE ARRAYS". Surface Review and Letters 17, n.º 04 (agosto de 2010): 405–10. http://dx.doi.org/10.1142/s0218625x10014259.
Texto completo da fonteMakino, Kotaro, Kosaku Kato, Yuta Saito, Paul Fons, Alexander V. Kolobov, Junji Tominaga, Takashi Nakano e Makoto Nakajima. "Terahertz spectroscopic characterization of Ge2Sb2Te5 phase change materials for photonics applications". Journal of Materials Chemistry C 7, n.º 27 (2019): 8209–15. http://dx.doi.org/10.1039/c9tc01456j.
Texto completo da fonteSun, Zhi Mei, Yuan Chun Pan, Bai Sheng Sa e Jian Zhou. "Ab Initio Study on Hexagonal Ge2Sb2Te5-A Phase-Change Material for Nonvolatile Memories". Materials Science Forum 687 (junho de 2011): 7–11. http://dx.doi.org/10.4028/www.scientific.net/msf.687.7.
Texto completo da fonteLiu, Cheng, Yonghui Zheng, Tianjiao Xin, Yunzhe Zheng, Rui Wang e Yan Cheng. "The Relationship between Electron Transport and Microstructure in Ge2Sb2Te5 Alloy". Nanomaterials 13, n.º 3 (31 de janeiro de 2023): 582. http://dx.doi.org/10.3390/nano13030582.
Texto completo da fonteGuo, Pengfei, Andrew Sarangan e Imad Agha. "A Review of Germanium-Antimony-Telluride Phase Change Materials for Non-Volatile Memories and Optical Modulators". Applied Sciences 9, n.º 3 (4 de fevereiro de 2019): 530. http://dx.doi.org/10.3390/app9030530.
Texto completo da fonteKang, Shinyoung, Juyoung Lee, Myounggon Kang e Yunheub Song. "Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications". Electronics 9, n.º 8 (7 de agosto de 2020): 1268. http://dx.doi.org/10.3390/electronics9081268.
Texto completo da fonteAlip, Rosalena Irma, Ryota Kobayashi, Yu Long Zhang, Zulfakri bin Mohamad, You Yin e Sumio Hosaka. "A Novel Phase Change Memory with a Separate Heater Characterized by Constant Resistance for Multilevel Storage". Key Engineering Materials 534 (janeiro de 2013): 136–40. http://dx.doi.org/10.4028/www.scientific.net/kem.534.136.
Texto completo da fonteKim, Yewon, Byeol Han, Yu-Jin Kim, Jeeyoon Shin, Seongyoon Kim, Romel Hidayat, Jae-Min Park, Wonyong Koh e Won-Jun Lee. "Atomic layer deposition and tellurization of Ge–Sb film for phase-change memory applications". RSC Advances 9, n.º 30 (2019): 17291–98. http://dx.doi.org/10.1039/c9ra02188d.
Texto completo da fonteQiao, Yang, Jin Zhao, Haodong Sun, Zhitang Song, Yuan Xue, Jiao Li e Sannian Song. "Pt Modified Sb2Te3 Alloy Ensuring High−Performance Phase Change Memory". Nanomaterials 12, n.º 12 (10 de junho de 2022): 1996. http://dx.doi.org/10.3390/nano12121996.
Texto completo da fonteChao, Der-Sheng, Yi-Chan Chen, Fred Chen, Ming-Jung Chen, Philip H. Yen, Chain-Ming Lee, Wei-Su Chen, Chenhsin Lien, Ming-Jer Kao e Ming-Jinn Tsai. "Enhanced Thermal Efficiency in Phase-Change Memory Cell by Double GST Thermally Confined Structure". IEEE Electron Device Letters 28, n.º 10 (outubro de 2007): 871–73. http://dx.doi.org/10.1109/led.2007.906084.
Texto completo da fonteAhn, Jun-Ku, Kyoung-Woo Park, Sung-Gi Hur, Nak-Jin Seong, Chung-Soo Kim, Jeong-Yong Lee e Soon-Gil Yoon. "Metalorganic chemical vapor deposition of non-GST chalcogenide materials for phase change memory applications". Journal of Materials Chemistry 20, n.º 9 (2010): 1751. http://dx.doi.org/10.1039/b922398c.
Texto completo da fonteSourav, Swapnil, Amit Krishna Dwivedi e Aminul Islam. "Investigating Phase Transform Behavior in Indium Selenide Based RAM and Its Validation as a Memory Element". Journal of Materials 2016 (22 de setembro de 2016): 1–7. http://dx.doi.org/10.1155/2016/6123268.
Texto completo da fonteAntolini, Alessio, Eleonora Franchi Scarselli, Antonio Gnudi, Marcella Carissimi, Marco Pasotti, Paolo Romele e Roberto Canegallo. "Characterization and Programming Algorithm of Phase Change Memory Cells for Analog In-Memory Computing". Materials 14, n.º 7 (26 de março de 2021): 1624. http://dx.doi.org/10.3390/ma14071624.
Texto completo da fonteNguyen, Huu Tan, Andrzej Kusiak, Jean Luc Battaglia, Cecile Gaborieau, Yanick Anguy, Roberto Fallica, Claudia Wiemer, Alessio Lamperti e Massimo Longo. "Thermal Properties of In-Sb-Te Thin Films for Phase Change Memory Application". Advances in Science and Technology 95 (outubro de 2014): 113–19. http://dx.doi.org/10.4028/www.scientific.net/ast.95.113.
Texto completo da fonteShao, Mingyue, Yang Qiao, Yuan Xue, Sannian Song, Zhitang Song e Xiaodan Li. "Advantages of Ta-Doped Sb3Te1 Materials for Phase Change Memory Applications". Nanomaterials 13, n.º 4 (5 de fevereiro de 2023): 633. http://dx.doi.org/10.3390/nano13040633.
Texto completo da fonteInoue, Nobuki, e Hisao Nakamura. "Structural transition pathway and bipolar switching of the GeTe–Sb2Te3 superlattice as interfacial phase-change memory". Faraday Discussions 213 (2019): 303–19. http://dx.doi.org/10.1039/c8fd00093j.
Texto completo da fonteNoor, Nafisa, Sadid Muneer, Raihan Sayeed Khan, Anna Gorbenko e Helena Silva. "Amorphized length and variability in phase-change memory line cells". Beilstein Journal of Nanotechnology 11 (29 de outubro de 2020): 1644–54. http://dx.doi.org/10.3762/bjnano.11.147.
Texto completo da fonteLi, Tao, Liang Cai Wu, Zhi Tang Song, San Nian Song, Feng Rao e Bo Liu. "Carbon-Doped Sb-Rich Ge-Sb-Te Phase Change Material for High Speed and High Thermal Stability Phase Change Memory Applications". Materials Science Forum 898 (junho de 2017): 1834–38. http://dx.doi.org/10.4028/www.scientific.net/msf.898.1834.
Texto completo da fonteKim, Myoung Sub, Jin Hyung Jun, Jin Ho Oh, Hyeong Joon Kim, Jae Sung Roh, Suk Kyoung Hong e Doo Jin Choi. "Electrical Switching Characteristics of Nitrogen Doped Ge2Sb2Te5 Based Phase Change Random Access Memory Cell". Solid State Phenomena 124-126 (junho de 2007): 21–24. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.21.
Texto completo da fonteOh, Sang Ho, Kyungjoon Baek, Sung Kyu Son, Kyung Song, Jang Won Oh, Seung-Joon Jeon, Won Kim, Jong Hee Yoo e Kee Jeung Lee. "In situ TEM observation of void formation and migration in phase change memory devices with confined nanoscale Ge2Sb2Te5". Nanoscale Advances 2, n.º 9 (2020): 3841–48. http://dx.doi.org/10.1039/d0na00223b.
Texto completo da fonteYoon, Jong Moon, Hu Young Jeong, Sung Hoon Hong, You Yin, Hyoung Seok Moon, Seong-Jun Jeong, Jun Hee Han et al. "Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory". J. Mater. Chem. 22, n.º 4 (2012): 1347–51. http://dx.doi.org/10.1039/c1jm14190b.
Texto completo da fonteChen, Yimin, Nan Han, Fanshuo Kong, Jun-Qiang Wang, Chenjie Gu, Yixiao Gao, Guoxiang Wang e Xiang Shen. "Kinetics features of 2D confined Ge2Sb2Te5 ultrathin film". Applied Physics Letters 121, n.º 6 (8 de agosto de 2022): 061904. http://dx.doi.org/10.1063/5.0100570.
Texto completo da fontePathak, Anushmita, Shivendra Kumar Pandey e Jitendra Kumar Behera. "Optical band-gap evolution and local structural change in Ge2Sb2Te5 phase change material". Journal of Physics: Conference Series 2426, n.º 1 (1 de fevereiro de 2023): 012045. http://dx.doi.org/10.1088/1742-6596/2426/1/012045.
Texto completo da fonteHamada, Seiti, Takafumi Horiike, Tomohiro Uno, Masato Ishikawa, Hideaki Machida, Yoshio Ohshita e Atsushi Ogura. "Evaluation of GexSbyTez Film Grown by Chemical Vapor Deposition". Materials Science Forum 725 (julho de 2012): 289–92. http://dx.doi.org/10.4028/www.scientific.net/msf.725.289.
Texto completo da fonteKashem, Md Tashfiq Bin, Jake Scoggin, Helena Silva e Ali Gokirmak. "(Digital Presentation) Finite Element Modeling of Thermoelectric Effects in Phase Change Memory Cells". ECS Meeting Abstracts MA2022-01, n.º 18 (7 de julho de 2022): 1031. http://dx.doi.org/10.1149/ma2022-01181031mtgabs.
Texto completo da fonteKashem, Md Tashfiq Bin, Jake Scoggin, Ali Gokirmak e Helena Silva. "(Digital Presentation) Electrothermal Modeling of Interfacial Phase Change Memory". ECS Meeting Abstracts MA2022-01, n.º 18 (7 de julho de 2022): 1032. http://dx.doi.org/10.1149/ma2022-01181032mtgabs.
Texto completo da fonteKiouseloglou, Athanasios, Gabriele Navarro, Veronique Sousa, Alain Persico, Anne Roule, Alessandro Cabrini, Guido Torelli et al. "A Novel Programming Technique to Boost Low-Resistance State Performance in Ge-Rich GST Phase Change Memory". IEEE Transactions on Electron Devices 61, n.º 5 (maio de 2014): 1246–54. http://dx.doi.org/10.1109/ted.2014.2310497.
Texto completo da fonteYamamoto, Takuya, Shogo Hatayama, Yun-Heub Song e Yuji Sutou. "Influence of Thomson effect on amorphization in phase-change memory: dimensional analysis based on Buckingham’s П theorem for Ge2Sb2Te5". Materials Research Express 8, n.º 11 (1 de novembro de 2021): 115902. http://dx.doi.org/10.1088/2053-1591/ac3953.
Texto completo da fonteMeng, Yingjie, Yimin Chen, Kexin Peng, Bin Chen, Chenjie Gu, Yixiao Gao, Guoxiang Wang e Xiang Shen. "GeTe ultrathin film based phase-change memory with extreme thermal stability, fast SET speed, and low RESET power energy". AIP Advances 13, n.º 3 (1 de março de 2023): 035205. http://dx.doi.org/10.1063/5.0138286.
Texto completo da fonteZhang, Dan, Yifeng Hu, Haipeng You, Xiaoqin Zhu, Yuemei Sun, Hua Zou e Yan Zheng. "High Reliability and Fast-Speed Phase-Change Memory Based on Sb70Se30/SiO2 Multilayer Thin Films". Advances in Materials Science and Engineering 2018 (21 de junho de 2018): 1–6. http://dx.doi.org/10.1155/2018/9693015.
Texto completo da fonteHira, Takashi, Takayuki Uchiyama, Kenta Kuwamura, Yuya Kihara, Tasuku Yawatari e Toshiharu Saiki. "Switching the Localized Surface Plasmon Resonance of Single Gold Nanorods with a Phase-Change Material and the Implementation of a Cellular Automata Algorithm Using a Plasmon Particle Array". Advances in Optical Technologies 2015 (2 de fevereiro de 2015): 1–5. http://dx.doi.org/10.1155/2015/150791.
Texto completo da fonteKashem, Md Tashfiq Bin, Sadid Muneer, Lhacene Adnane, Faruk Dirisaglik, Ali Gokirmak e Helena Silva. "(Digital Presentation) Calculation of the Energy Band Diagram and Estimation of Electronic Transport Parameters of Metastable Amorphous Ge2Sb2Te5". ECS Meeting Abstracts MA2022-01, n.º 18 (7 de julho de 2022): 1043. http://dx.doi.org/10.1149/ma2022-01181043mtgabs.
Texto completo da fonteCueto, O., C. Jahan, V. Sousa, J. F. Nodin, S. Syoud, L. Perniola, A. Fantini et al. "Analysis by simulation of amorphization current in phase change memory applied to pillar and GST confined type cells". Microelectronic Engineering 88, n.º 5 (maio de 2011): 827–32. http://dx.doi.org/10.1016/j.mee.2010.09.022.
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