Artigos de revistas sobre o tema "PCM memory"
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Arjomand, Mohammad, Amin Jadidi, Mahmut T. Kandemir, Anand Sivasubramaniam e Chita R. Das. "HL-PCM: MLC PCM Main Memory with Accelerated Read". IEEE Transactions on Parallel and Distributed Systems 28, n.º 11 (1 de novembro de 2017): 3188–200. http://dx.doi.org/10.1109/tpds.2017.2705125.
Texto completo da fontePriya, Bhukya Krishna, e N. Ramasubramanian. "Improving the Lifetime of Phase Change Memory by Shadow Dynamic Random Access Memory". International Journal of Service Science, Management, Engineering, and Technology 12, n.º 2 (março de 2021): 154–68. http://dx.doi.org/10.4018/ijssmet.2021030109.
Texto completo da fonteMacyna, Wojciech, e Michal Kukowski. "Adaptive Merging on Phase Change Memory". Fundamenta Informaticae 188, n.º 2 (15 de março de 2023): 103–26. http://dx.doi.org/10.3233/fi-222144.
Texto completo da fonteJabarov, Elkhan, Byung-Won On, Gyu Choi e Myong-Soon Park. "R-Tree for phase change memory". Computer Science and Information Systems 14, n.º 2 (2017): 347–67. http://dx.doi.org/10.2298/csis160620008j.
Texto completo da fonteHong, Jeong Beom, Young Sik Lee, Yong Wook Kim e Tae Hee Han. "Error-Vulnerable Pattern-Aware Binary-to-Ternary Data Mapping for Improving Storage Density of 3LC Phase Change Memory". Electronics 9, n.º 4 (9 de abril de 2020): 626. http://dx.doi.org/10.3390/electronics9040626.
Texto completo da fonteDing, Feilong, Baokang Peng, Xi Li, Lining Zhang, Runsheng Wang, Zhitang Song e Ru Huang. "A review of compact modeling for phase change memory". Journal of Semiconductors 43, n.º 2 (1 de fevereiro de 2022): 023101. http://dx.doi.org/10.1088/1674-4926/43/2/023101.
Texto completo da fonteTang, Pu, Jing Xiao e Ming Tao. "Thermal Crosstalk Analysis of Phase Change Memory Considering Thermoelectric Effect and Thermal Boundary Resistance". Journal of Physics: Conference Series 2624, n.º 1 (1 de outubro de 2023): 012020. http://dx.doi.org/10.1088/1742-6596/2624/1/012020.
Texto completo da fonteStern, Keren, Yair Keller, Christopher M. Neumann, Eric Pop e Eilam Yalon. "Temperature-dependent thermal resistance of phase change memory". Applied Physics Letters 120, n.º 11 (14 de março de 2022): 113501. http://dx.doi.org/10.1063/5.0081016.
Texto completo da fonteSun, Hao, Lan Chen, Xiaoran Hao, Chenji Liu e Mao Ni. "An Energy-Efficient and Fast Scheme for Hybrid Storage Class Memory in an AIoT Terminal System". Electronics 9, n.º 6 (17 de junho de 2020): 1013. http://dx.doi.org/10.3390/electronics9061013.
Texto completo da fonteShin, Dongsuk, Hakbeom Jang, Kiseok Oh e Jae W. Lee. "An Energy-Efficient DRAM Cache Architecture for Mobile Platforms With PCM-Based Main Memory". ACM Transactions on Embedded Computing Systems 21, n.º 1 (31 de janeiro de 2022): 1–22. http://dx.doi.org/10.1145/3451995.
Texto completo da fonteHo, Chien-Chung, Yu-Ming Chang, Yuan-Hao Chang, Hsiu-Chang Chen e Tei-Wei Kuo. "Write-aware memory management for hybrid SLC-MLC PCM memory systems". ACM SIGAPP Applied Computing Review 17, n.º 2 (3 de agosto de 2017): 16–26. http://dx.doi.org/10.1145/3131080.3131082.
Texto completo da fonteHong, Feng, Jianquan Zhang, Shigui Qi e Zheng Li. "PCM-2R: Accelerating MLC PCM Writes via Data Reshaping and Remapping". Mobile Information Systems 2022 (16 de julho de 2022): 1–19. http://dx.doi.org/10.1155/2022/9552517.
Texto completo da fonteDing, Feilong, Deqi Dong, Yihan Chen, Xinnan Lin e Lining Zhang. "Robust Simulations of Nanoscale Phase Change Memory: Dynamics and Retention". Nanomaterials 11, n.º 11 (3 de novembro de 2021): 2945. http://dx.doi.org/10.3390/nano11112945.
Texto completo da fonteAntolini, Alessio, Eleonora Franchi Scarselli, Antonio Gnudi, Marcella Carissimi, Marco Pasotti, Paolo Romele e Roberto Canegallo. "Characterization and Programming Algorithm of Phase Change Memory Cells for Analog In-Memory Computing". Materials 14, n.º 7 (26 de março de 2021): 1624. http://dx.doi.org/10.3390/ma14071624.
Texto completo da fonteArjomand, Mohammad, Mahmut T. Kandemir, Anand Sivasubramaniam e Chita R. Das. "Boosting access parallelism to PCM-based main memory". ACM SIGARCH Computer Architecture News 44, n.º 3 (12 de outubro de 2016): 695–706. http://dx.doi.org/10.1145/3007787.3001211.
Texto completo da fonteLee, Jung-Hoon. "PCM Main Memory for Low Power Embedded System". IEMEK Journal of Embedded Systems and Applications 10, n.º 6 (31 de dezembro de 2015): 391–97. http://dx.doi.org/10.14372/iemek.2015.10.6.391.
Texto completo da fonteJung, Bo-Sung, e Jung-Hoon Lee. "High Performance PCM&DRAM Hybrid Memory System". IEMEK Journal of Embedded Systems and Applications 11, n.º 2 (30 de abril de 2016): 117–23. http://dx.doi.org/10.14372/iemek.2016.11.2.117.
Texto completo da fonteHARNSOONGNOEN, SANCHAI, CHIRANUT SA-NGIAMSAK e APIRAT SIRITARATIWAT. "OPTIMIZATION OF PHASE CHANGE MEMORY WITH THIN METAL INSERTED LAYER ON MATERIAL PROPERTIES". International Journal of Modern Physics B 23, n.º 17 (10 de julho de 2009): 3625–30. http://dx.doi.org/10.1142/s0217979209063080.
Texto completo da fontePriya, Bhukya Krishna, e N. Ramasubramanian. "Enhancing the Lifetime of a Phase Change Memory with Bit-Flip Reversal". Journal of Circuits, Systems and Computers 29, n.º 14 (11 de março de 2020): 2050219. http://dx.doi.org/10.1142/s0218126620502199.
Texto completo da fonteAkbarzadeh, Negar, Sina Darabi, Atiyeh Gheibi-Fetrat, Amir Mirzaei, Mohammad Sadrosadati e Hamid Sarbazi-Azad. "H3DM: A High-bandwidth High-capacity Hybrid 3D Memory Design for GPUs". Proceedings of the ACM on Measurement and Analysis of Computing Systems 8, n.º 1 (16 de fevereiro de 2024): 1–28. http://dx.doi.org/10.1145/3639038.
Texto completo da fonteMohseni, Milad, Ahmed Alkhayyat, P. Balaji Srikaanth, Ali Jawad Alrubaie, Arnold C. Alguno, Rey Y. Capangpangan e Bhupesh Kumar Singh. "Analyzing Characteristics for Two-Step SET Operation Scheme for Improving Write Time in Nanoscale Phase-Change Memory (PCM)". Journal of Nanomaterials 2022 (9 de setembro de 2022): 1–20. http://dx.doi.org/10.1155/2022/6822884.
Texto completo da fonteLewis, Matthew, e Lucien N. Brush. "Impact of solid–liquid interfacial thermodynamics on phase-change memory RESET scaling". Nanotechnology 33, n.º 20 (21 de fevereiro de 2022): 205204. http://dx.doi.org/10.1088/1361-6528/ac512c.
Texto completo da fonteLei, Xin-Qing, Jia-He Zhu, Da-Wei Wang e Wen-Sheng Zhao. "Design for Ultrahigh-Density Vertical Phase Change Memory: Proposal and Numerical Investigation". Electronics 11, n.º 12 (8 de junho de 2022): 1822. http://dx.doi.org/10.3390/electronics11121822.
Texto completo da fonteGonzalez-Alberquilla, Rodrigo, Fernando Castro, Luis Pinuel e Francisco Tirado. "CEPRAM: Compression for Endurance in PCM RAM". Journal of Circuits, Systems and Computers 26, n.º 11 (3 de abril de 2017): 1750167. http://dx.doi.org/10.1142/s0218126617501675.
Texto completo da fonteQiao, Yang, Jin Zhao, Haodong Sun, Zhitang Song, Yuan Xue, Jiao Li e Sannian Song. "Pt Modified Sb2Te3 Alloy Ensuring High−Performance Phase Change Memory". Nanomaterials 12, n.º 12 (10 de junho de 2022): 1996. http://dx.doi.org/10.3390/nano12121996.
Texto completo da fonteZhang, Zhong Hua, San Nian Song, Zhi Tang Song, Le Li, Lan Lan Shen, Tian Qi Guo, Yan Cheng et al. "Performance Improvement of Phase Change Memory Cell by Using a Tantalum Pentoxide Buffer Layer". Materials Science Forum 848 (março de 2016): 425–29. http://dx.doi.org/10.4028/www.scientific.net/msf.848.425.
Texto completo da fonteSong, Zhitang, Daolin Cai, Yan Cheng, Lei Wang, Shilong Lv, Tianjiao Xin e Gaoming Feng. "12-state multi-level cell storage implemented in a 128 Mb phase change memory chip". Nanoscale 13, n.º 23 (2021): 10455–61. http://dx.doi.org/10.1039/d1nr00100k.
Texto completo da fonteYin, You, e Sumio Hosaka. "Crystal Growth Suppression by N-Doping into Chalcogenide for Application to Next-Generation Phase Change Memory". Key Engineering Materials 497 (dezembro de 2011): 101–5. http://dx.doi.org/10.4028/www.scientific.net/kem.497.101.
Texto completo da fonteKim, Jeong-Geun, Shin-Dug Kim e Su-Kyung Yoon. "Q-Selector-Based Prefetching Method for DRAM/NVM Hybrid Main Memory System". Electronics 9, n.º 12 (16 de dezembro de 2020): 2158. http://dx.doi.org/10.3390/electronics9122158.
Texto completo da fonteYun, Ji-Tae, Su-Kyung Yoon, Jeong-Geun Kim, Bernd Burgstaller e Shin-Dug Kim. "Regression Prefetcher with Preprocessing for DRAM-PCM Hybrid Main Memory". IEEE Computer Architecture Letters 17, n.º 2 (1 de julho de 2018): 163–66. http://dx.doi.org/10.1109/lca.2018.2841835.
Texto completo da fontePourshirazi, Bahareh, Majed Valad Beigi, Zhichun Zhu e Gokhan Memik. "Writeback-Aware LLC Management for PCM-Based Main Memory Systems". ACM Transactions on Design Automation of Electronic Systems 24, n.º 2 (21 de março de 2019): 1–19. http://dx.doi.org/10.1145/3292009.
Texto completo da fonteYoon, Su-Kyung, Jitae Yun, Jung-Geun Kim e Shin-Dug Kim. "Self-Adaptive Filtering Algorithm with PCM-Based Memory Storage System". ACM Transactions on Embedded Computing Systems 17, n.º 3 (2 de junho de 2018): 1–23. http://dx.doi.org/10.1145/3190856.
Texto completo da fonteEl-Hassan, Nemat H., Nandha Thulasiraman Kumar e Haider Abbas F. Almurib. "Modelling of wire resistance effect in PCM-based nanocrossbar memory". Journal of Engineering 2016, n.º 10 (1 de outubro de 2016): 357–62. http://dx.doi.org/10.1049/joe.2016.0212.
Texto completo da fonteMeng, Yingjie, Yimin Chen, Kexin Peng, Bin Chen, Chenjie Gu, Yixiao Gao, Guoxiang Wang e Xiang Shen. "GeTe ultrathin film based phase-change memory with extreme thermal stability, fast SET speed, and low RESET power energy". AIP Advances 13, n.º 3 (1 de março de 2023): 035205. http://dx.doi.org/10.1063/5.0138286.
Texto completo da fonteXu, Zhehao, Xiao Su, Sicong Hua, Jiwei Zhai, Sannian Song e Zhitang Song. "Non-volatile multi-level cell storage via sequential phase transition in Sb7Te3/GeSb6Te multilayer thin film". Nanotechnology 33, n.º 7 (22 de novembro de 2021): 075701. http://dx.doi.org/10.1088/1361-6528/ac3613.
Texto completo da fonteGafner, Yuri Ya, Svetlana L. Gafner e Daria A. Ryzhkova. "Estimating Ag-Cu Nanoalloy Applicability for PCM Data Recording". Solid State Phenomena 310 (setembro de 2020): 47–52. http://dx.doi.org/10.4028/www.scientific.net/ssp.310.47.
Texto completo da fonteYin, You, Rosalena Irma Alip, Yu Long Zhang, Ryota Kobayashi e Sumio Hosaka. "Multi-Level Storage in Lateral Phase Change Memory: From 3 to 16 Resistance Levels". Key Engineering Materials 534 (janeiro de 2013): 131–35. http://dx.doi.org/10.4028/www.scientific.net/kem.534.131.
Texto completo da fonteNguyen, Huu Tan, Andrzej Kusiak, Jean Luc Battaglia, Cecile Gaborieau, Yanick Anguy, Roberto Fallica, Claudia Wiemer, Alessio Lamperti e Massimo Longo. "Thermal Properties of In-Sb-Te Thin Films for Phase Change Memory Application". Advances in Science and Technology 95 (outubro de 2014): 113–19. http://dx.doi.org/10.4028/www.scientific.net/ast.95.113.
Texto completo da fonteLiu, Guang Yu, Liang Cai Wu, Zhi Tang Song, Feng Rao, San Nian Song e Yan Cheng. "Stability of Sb2Te Crystalline Films for Phase Change Memory". Materials Science Forum 898 (junho de 2017): 1829–33. http://dx.doi.org/10.4028/www.scientific.net/msf.898.1829.
Texto completo da fonteYin, You, e Sumio Hosaka. "Proposed Phase-Change Memory with a Step-Like Channel for High-Performance Multi-State Storage". Key Engineering Materials 459 (dezembro de 2010): 145–50. http://dx.doi.org/10.4028/www.scientific.net/kem.459.145.
Texto completo da fonteLin, Shu-Yen, e Shao-Cheng Wang. "Thermal-constrained memory management for three-dimensional DRAM-PCM memory with deep neural network applications". Microprocessors and Microsystems 89 (março de 2022): 104444. http://dx.doi.org/10.1016/j.micpro.2022.104444.
Texto completo da fonteGrimonia, E., M. R. C. Andhika, M. F. N. Aulady, R. V. C. Rubi e N. L. Hamidah. "Thermal Management System Using Phase Change Material for Lithium-ion Battery". Journal of Physics: Conference Series 2117, n.º 1 (1 de novembro de 2021): 012005. http://dx.doi.org/10.1088/1742-6596/2117/1/012005.
Texto completo da fonteFAN, Yu-Lei, e Xiao-Feng MENG. "Transaction Recovery Model of Databases Based on PCM and Flash Memory". Chinese Journal of Computers 36, n.º 8 (18 de março de 2014): 1582–91. http://dx.doi.org/10.3724/sp.j.1016.2013.01582.
Texto completo da fonteRuan, Shenchen, Haixia Wang e Dongsheng Wang. "MAC : A Novel Systematically Multilevel Cache Replacement Policy for PCM Memory". Computer Applications: An International Journal 3, n.º 2 (30 de maio de 2016): 11–22. http://dx.doi.org/10.5121/caij.2016.3202.
Texto completo da fonteFu, Yinjin, Yutong Lu, Zhiguang Chen wu, Yang Wu e Nong Xiao. "Design and Simulation of Content-Aware Hybrid DRAM-PCM Memory System". IEEE Transactions on Parallel and Distributed Systems 33, n.º 7 (1 de julho de 2022): 1666–77. http://dx.doi.org/10.1109/tpds.2021.3123539.
Texto completo da fonteJunsangsri, Pilin, e Fabrizio Lombardi. "A New Comprehensive Model of a Phase Change Memory (PCM) Cell". IEEE Transactions on Nanotechnology 13, n.º 6 (novembro de 2014): 1213–25. http://dx.doi.org/10.1109/tnano.2014.2353992.
Texto completo da fonteCiocchini, Nicola, Marco Cassinerio, Davide Fugazza e Daniele Ielmini. "Modeling of Threshold-Voltage Drift in Phase-Change Memory (PCM) Devices". IEEE Transactions on Electron Devices 59, n.º 11 (novembro de 2012): 3084–90. http://dx.doi.org/10.1109/ted.2012.2214784.
Texto completo da fonteBaek, Seungcheol, Hyung Gyu Lee, Chrysostomos Nicopoulos e Jongman Kim. "Designing Hybrid DRAM/PCM Main Memory Systems Utilizing Dual-Phase Compression". ACM Transactions on Design Automation of Electronic Systems 20, n.º 1 (18 de novembro de 2014): 1–31. http://dx.doi.org/10.1145/2658989.
Texto completo da fonteMohseni, Milad, e Ahmad Habibized Novin. "A survey on techniques for improving Phase Change Memory (PCM) lifetime". Journal of Systems Architecture 144 (novembro de 2023): 103008. http://dx.doi.org/10.1016/j.sysarc.2023.103008.
Texto completo da fonteYang, Zhe, Dayou Zhang, Jingwei Cai, Chuantao Gong, Qiang He, Ming Xu, Hao Tong e Xiangshui Miao. "Joule heating induced non-melting phase transition and multi-level conductance in MoTe2 based phase change memory". Applied Physics Letters 121, n.º 20 (14 de novembro de 2022): 203508. http://dx.doi.org/10.1063/5.0127160.
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