Artigos de revistas sobre o tema "Ovonic Threshold Selector (OTS)"
Crie uma referência precisa em APA, MLA, Chicago, Harvard, e outros estilos
Veja os 50 melhores artigos de revistas para estudos sobre o assunto "Ovonic Threshold Selector (OTS)".
Ao lado de cada fonte na lista de referências, há um botão "Adicionar à bibliografia". Clique e geraremos automaticamente a citação bibliográfica do trabalho escolhido no estilo de citação de que você precisa: APA, MLA, Harvard, Chicago, Vancouver, etc.
Você também pode baixar o texto completo da publicação científica em formato .pdf e ler o resumo do trabalho online se estiver presente nos metadados.
Veja os artigos de revistas das mais diversas áreas científicas e compile uma bibliografia correta.
Zhang, Shiqing, Bing Song, Shujing Jia, Rongrong Cao, Sen Liu, Hui Xu e Qingjiang Li. "Multilayer doped-GeSe OTS selector for improved endurance and threshold voltage stability". Journal of Semiconductors 43, n.º 10 (1 de outubro de 2022): 104101. http://dx.doi.org/10.1088/1674-4926/43/10/104101.
Texto completo da fonteKim, Jaeyeon, Wansun Kim, Jusung Kim e Hyunchul Sohn. "Locally formed conductive filaments in an amorphous Ga2Te3 ovonic threshold switching device". AIP Advances 13, n.º 3 (1 de março de 2023): 035221. http://dx.doi.org/10.1063/5.0140715.
Texto completo da fonteWang, Lun, Jinyu Wen, Rongjiang Zhu, Jiangxi Chen, Hao Tong e Xiangshui Miao. "Failure mechanism investigation and endurance improvement in Te-rich Ge–Te based ovonic threshold switching selectors". Applied Physics Letters 121, n.º 19 (7 de novembro de 2022): 193501. http://dx.doi.org/10.1063/5.0127177.
Texto completo da fonteWu, Renjie, Yuting Sun, Shuhao Zhang, Zihao Zhao e Zhitang Song. "Great Potential of Si-Te Ovonic Threshold Selector in Electrical Performance and Scalability". Nanomaterials 13, n.º 6 (21 de março de 2023): 1114. http://dx.doi.org/10.3390/nano13061114.
Texto completo da fonteNoé, Pierre, Anthonin Verdy, Francesco d’Acapito, Jean-Baptiste Dory, Mathieu Bernard, Gabriele Navarro, Jean-Baptiste Jager, Jérôme Gaudin e Jean-Yves Raty. "Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed". Science Advances 6, n.º 9 (fevereiro de 2020): eaay2830. http://dx.doi.org/10.1126/sciadv.aay2830.
Texto completo da fonteSeong, Dongjun, Su Yeon Lee, Hyun Kyu Seo, Jong-Woo Kim, Minsoo Park e Min Kyu Yang. "Highly Reliable Ovonic Threshold Switch with TiN/GeTe/TiN Structure". Materials 16, n.º 5 (2 de março de 2023): 2066. http://dx.doi.org/10.3390/ma16052066.
Texto completo da fonteLaguna, C., M. Bernard, J. Garrione, F. Fillot, F. Aussenac, D. Rouchon, G. Lima, L. Militaru, A. Souifi e G. Navarro. "Inside the ovonic threshold switching (OTS) device based on GeSbSeN: Structural analysis under electrical and thermal stress". Journal of Applied Physics 133, n.º 7 (21 de fevereiro de 2023): 074501. http://dx.doi.org/10.1063/5.0134947.
Texto completo da fonteKim, Myoungsub, Youngjun Kim, Minkyu Lee, Seok Man Hong, Hyung Keun Kim, Sijung Yoo, Taehoon Kim, Seung-min Chung, Taeyoon Lee e Hyungjun Kim. "PE-ALD of Ge1−xSx amorphous chalcogenide alloys for OTS applications". Journal of Materials Chemistry C 9, n.º 18 (2021): 6006–13. http://dx.doi.org/10.1039/d1tc00650a.
Texto completo da fonteMinguet Lopez, J., T. Hirtzlin, M. Dampfhoffer, L. Grenouillet, L. Reganaz, G. Navarro, C. Carabasse et al. "OxRAM + OTS optimization for binarized neural network hardware implementation". Semiconductor Science and Technology 37, n.º 1 (8 de dezembro de 2021): 014001. http://dx.doi.org/10.1088/1361-6641/ac31e2.
Texto completo da fonteKweon, Jun Young, e Yun-Heup Song. "CMOS Based Ovonic Threshold Switching Emulation Circuitry". Journal of Nanoscience and Nanotechnology 20, n.º 8 (1 de agosto de 2020): 4977–79. http://dx.doi.org/10.1166/jnn.2020.17807.
Texto completo da fonteYoo, Sijung, Chanyoung Yoo, Eui-Sang Park, Woohyun Kim, Yoon Kyeung Lee e Cheol Seong Hwang. "Chemical interactions in the atomic layer deposition of Ge–Sb–Se–Te films and their ovonic threshold switching behavior". Journal of Materials Chemistry C 6, n.º 18 (2018): 5025–32. http://dx.doi.org/10.1039/c8tc01041b.
Texto completo da fonteKim, Doo San, Ju Eun Kim, You Jung Gill, Jin Woo Park, Yun Jong Jang, Ye Eun Kim, Hyejin Choi, Oik Kwon e Geun Young Yeom. "Reactive ion etching of an ovonic threshold switch (OTS) material using hydrogen-based plasmas for non-volatile phase change memories". RSC Advances 10, n.º 59 (2020): 36141–46. http://dx.doi.org/10.1039/d0ra05321j.
Texto completo da fonteAn, Byung-Kwon, Seong-Beom Kim e Yun-Heub Song. "Effect of Bottom Electrode Size on Ovonic Threshold Switch(OTS) Characteristics". JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 20, n.º 1 (29 de fevereiro de 2020): 8–11. http://dx.doi.org/10.5573/jsts.2020.20.1.008.
Texto completo da fonteLee, Su Yeon, Hyun Kyu Seo, Se Yeon Jeong e Min Kyu Yang. "Improved Electrical Characteristics of Field Effect Transistors with GeSeTe-Based Ovonic Threshold Switching Devices". Materials 16, n.º 12 (11 de junho de 2023): 4315. http://dx.doi.org/10.3390/ma16124315.
Texto completo da fonteWang, Lun, Wang Cai, Da He, Qi Lin, Daixing Wan, Hao Tong e Xiangshui Miao. "Performance Improvement of GeTex-Based Ovonic Threshold Switching Selector by C Doping". IEEE Electron Device Letters 42, n.º 5 (maio de 2021): 688–91. http://dx.doi.org/10.1109/led.2021.3064857.
Texto completo da fonteLee, Hyejin, Seong Won Cho, Seon Jeong Kim, Jaesang Lee, Keun Su Kim, Inho Kim, Jong-Keuk Park et al. "Three-Terminal Ovonic Threshold Switch (3T-OTS) with Tunable Threshold Voltage for Versatile Artificial Sensory Neurons". Nano Letters 22, n.º 2 (13 de janeiro de 2022): 733–39. http://dx.doi.org/10.1021/acs.nanolett.1c04125.
Texto completo da fonteGao, Tian, Jie Feng, Haili Ma, Xi Zhu e Zhixian Ma. "AlxTe1−x selector with high ovonic threshold switching performance for memory crossbar arrays". Applied Physics Letters 114, n.º 16 (22 de abril de 2019): 163505. http://dx.doi.org/10.1063/1.5089818.
Texto completo da fontePark, Jin Woo, Doo San Kim, Won Oh Lee, Ju Eun Kim, HyeJin Choi, OIk Kwon, SeungPil Chung e Geun Young Yeom. "Etch Damages of Ovonic Threshold Switch (OTS) Material by Halogen Gas Based-Inductively Coupled Plasmas". ECS Journal of Solid State Science and Technology 8, n.º 6 (2019): P341—P345. http://dx.doi.org/10.1149/2.0051906jss.
Texto completo da fonteKim, Doo San, You Jung Gill, Yun Jong Jang, Ye Eun Kim e Geun Young Yeom. "Study on Hydrogen-Based Reactive Ion Etching of Ovonic Threshold Switch (OTS) Materials for Phase Change Memory Devices". ECS Transactions 102, n.º 2 (7 de maio de 2021): 39–43. http://dx.doi.org/10.1149/10202.0039ecst.
Texto completo da fonteKim, Doo San, You Jung Gill, Yun Jong Jang, Ye Eun Kim e Geun Young Yeom. "Study on Hydrogen-Based Reactive Ion Etching of Ovonic Threshold Switch (OTS) Materials for Phase Change Memory Devices". ECS Meeting Abstracts MA2021-01, n.º 30 (30 de maio de 2021): 1023. http://dx.doi.org/10.1149/ma2021-01301023mtgabs.
Texto completo da fonteKoo, Yunmo, Sangmin Lee, Seonggeon Park, Minkyu Yang e Hyunsang Hwang. "Simple Binary Ovonic Threshold Switching Material SiTe and Its Excellent Selector Performance for High-Density Memory Array Application". IEEE Electron Device Letters 38, n.º 5 (maio de 2017): 568–71. http://dx.doi.org/10.1109/led.2017.2685435.
Texto completo da fonteChen, Ziqi, Hao Tong, Wang Cai, Lun Wang e Xiangshui Miao. "Modeling and Simulations of the Integrated Device of Phase Change Memory and Ovonic Threshold Switch Selector With a Confined Structure". IEEE Transactions on Electron Devices 68, n.º 4 (abril de 2021): 1616–21. http://dx.doi.org/10.1109/ted.2021.3059436.
Texto completo da fonteKim, S. D., H. W. Ahn, S. y. Shin, D. S. Jeong, S. H. Son, H. Lee, B. k. Cheong, D. W. Shin e S. Lee. "Effect of Ge Concentration in GexSe1-x Chalcogenide Glass on the Electronic Structures and the Characteristics of Ovonic Threshold Switching (OTS) Devices". ECS Solid State Letters 2, n.º 10 (18 de julho de 2013): Q75—Q77. http://dx.doi.org/10.1149/2.001310ssl.
Texto completo da fonteKwak, Myonghoon, Sangmin Lee, Seyoung Kim e Hyunsang Hwang. "Improved Pattern Recognition Accuracy of Hardware Neural Network: Deactivating Short Failed Synapse Device by Adopting Ovonic Threshold Switching (OTS)-Based Fuse Device". IEEE Electron Device Letters 41, n.º 9 (setembro de 2020): 1436–39. http://dx.doi.org/10.1109/led.2020.3008936.
Texto completo da fonteSeo, Juhee, Seong Won Cho, Hyung-Woo Ahn, Byung-ki Cheong e Suyoun Lee. "A study on the interface between an amorphous chalcogenide and the electrode: Effect of the electrode on the characteristics of the Ovonic Threshold Switch (OTS)". Journal of Alloys and Compounds 691 (janeiro de 2017): 880–83. http://dx.doi.org/10.1016/j.jallcom.2016.08.237.
Texto completo da fonteKashem, Md Tashfiq Bin, Sadid Muneer, Lhacene Adnane, Faruk Dirisaglik, Ali Gokirmak e Helena Silva. "(Digital Presentation) Calculation of the Energy Band Diagram and Estimation of Electronic Transport Parameters of Metastable Amorphous Ge2Sb2Te5". ECS Meeting Abstracts MA2022-01, n.º 18 (7 de julho de 2022): 1043. http://dx.doi.org/10.1149/ma2022-01181043mtgabs.
Texto completo da fonteZhao, Zihao, Sergiu Clima, Daniele Garbin, Robin Degraeve, Geoffrey Pourtois, Zhitang Song e Min Zhu. "Chalcogenide Ovonic Threshold Switching Selector". Nano-Micro Letters 16, n.º 1 (11 de janeiro de 2024). http://dx.doi.org/10.1007/s40820-023-01289-x.
Texto completo da fonteQiao, Chong, Lanli Chen, Rongchuan Gu, Bin Liu, Shengzhao Wang, Songyou Wang, Cai Zhuang Wang, Kai-Ming Ho, Ming Xu e Xiangshui Miao. "Structure, bonding and electronic characteristics of amorphous Se". Physical Chemistry Chemical Physics, 2024. http://dx.doi.org/10.1039/d4cp00078a.
Texto completo da fonteHaider, Ali, Shaoren Deng, Wouter Devulder, Jan Willem Maes, Jean Marc Girard, Gabriel Khalil El Hajjam, Gouri Kar et al. "Pulsed chemical vapour deposition of conformal GeSe for application as OTS selector". Materials Advances, 2021. http://dx.doi.org/10.1039/d0ma01014f.
Texto completo da fonteClima, Sergiu, Daisuke Matsubayashi, Taras Ravsher, Daniele Garbin, Romain Delhougne, Gouri Sankar Kar e Geoffrey Pourtois. "In silico screening for As/Se-free ovonic threshold switching materials". npj Computational Materials 9, n.º 1 (3 de junho de 2023). http://dx.doi.org/10.1038/s41524-023-01043-2.
Texto completo da fonteZhao, Jiayi, Zihao Zhao, Zhitang Song e Min Zhu. "GeSe ovonic threshold switch: the impact of functional layer thickness and device size". Scientific Reports 14, n.º 1 (20 de março de 2024). http://dx.doi.org/10.1038/s41598-024-57029-7.
Texto completo da fonteLee, Jangseop, Sanghyun Ban, Yoori Seo, Dongmin Kim e Hyunsang Hwang. "Excellent Reliability Characteristics of Ovonic Threshold Switch Device with High Temperature Forming Technique". physica status solidi (RRL) – Rapid Research Letters, 30 de novembro de 2023. http://dx.doi.org/10.1002/pssr.202300412.
Texto completo da fonteWang, Lun, Zixuan Liu, Jiangxi Chen, Zhuoran Zhang, Jinyu Wen, Ruizhe Zhao, Hao Tong e Xiangshui Miao. "Refresh Operation Method for Solving Thermal Stability Issue and Improving Endurance of Ovonic Threshold Switching Selector". Journal of Materials Chemistry C, 2023. http://dx.doi.org/10.1039/d3tc00448a.
Texto completo da fonteGu, Rongchuan, Meng Xu, Yongpeng Liu, Yinghua Shen, Chong Qiao, Cai Zhuang Wang, Kai Ming Ho, Songyou Wang, Ming Xu e Xiangshui Miao. "Unravelling the atomic mechanisms of tetrahedral doping in chalcogenide glass for electrical switching materials". Journal of Materials Chemistry C, 2023. http://dx.doi.org/10.1039/d3tc02984k.
Texto completo da fonteYuan, Zhenhui, Xiaodan Li, Sannian Song, Zhitang Song, Jiawei Zha, Gang Han, Bingjun Yang, Takehito Jimbo e Koukou Suu. "The enhanced performance of a Si–As–Se ovonic threshold switching selector". Journal of Materials Chemistry C, 2021. http://dx.doi.org/10.1039/d1tc02730a.
Texto completo da fonteZhang, Shiqing, Hui Xu, Zhiwei Li, Sen Liu, Bing Song e Qingjiang Li. "A Compact Model of Ovonic Threshold Switch Combining Thermal Dissipation Effect". Frontiers in Neuroscience 15 (9 de fevereiro de 2021). http://dx.doi.org/10.3389/fnins.2021.635264.
Texto completo da fonteSeo, Yoori, Jangseop Lee, Sanghyun Ban, Dongmin Kim, Geonhui Han e Hyunsang Hwang. "Improving the selector characteristics of ovonic threshold switch via UV treatment process". Applied Physics Letters 123, n.º 24 (11 de dezembro de 2023). http://dx.doi.org/10.1063/5.0174074.
Texto completo da fonteKarpov, Ilya V., David Kencke, Derchang Kau, Stephen Tang e Gianpalo Spadini. "Phase Change Memory with Chalcogenide Selector (PCMS): Characteristic Behaviors, Physical Models and Key Material Properties". MRS Proceedings 1250 (2010). http://dx.doi.org/10.1557/proc-1250-g14-01-h07-01.
Texto completo da fonteYap, Suk-Min, I.-Ting Wang, Ming-Hung Wu e Tuo-Hung Hou. "Voltage–Time Transformation Model for Threshold Switching Spiking Neuron Based on Nucleation Theory". Frontiers in Neuroscience 16 (13 de abril de 2022). http://dx.doi.org/10.3389/fnins.2022.868671.
Texto completo da fonteWu, Renjie, Rongchuan Gu, Tamihiro Gotoh, Zihao Zhao, Yuting Sun, Shujing Jia, Xiangshui Miao et al. "The role of arsenic in the operation of sulfur-based electrical threshold switches". Nature Communications 14, n.º 1 (29 de setembro de 2023). http://dx.doi.org/10.1038/s41467-023-41643-6.
Texto completo da fonteThesberg, M., Z. Stanojevic, O. Baumgartner, C. Kernstock, D. Leonelli, M. Barci, X. Wang et al. "Monolithic TCAD simulation of phase-change memory (PCM/PRAM) + Ovonic Threshold Switch (OTS) selector device". Solid-State Electronics, outubro de 2022, 108504. http://dx.doi.org/10.1016/j.sse.2022.108504.
Texto completo da fonteAntonelli, Renzo, Guillaume Bourgeois, Simon Martin, Valentina Meli, Niccoló Castellani, Antoine Salvi, Sylvain Gout et al. "Programming operations analysis and statistics in 1S1R OTS+PCM Double‐Patterned Self‐Aligned structure". physica status solidi (RRL) – Rapid Research Letters, 6 de fevereiro de 2024. http://dx.doi.org/10.1002/pssr.202300429.
Texto completo da fonteHu, Zeyu, Weidong Zhang, Robin Degraeve, Daniele Garbin, Zheng Chai, Nishant Saxena, Pedro Freitas et al. "New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors". IEEE Transactions on Electron Devices, 2022, 1–7. http://dx.doi.org/10.1109/ted.2022.3231233.
Texto completo da fonteSaito, Kentaro, Shogo Hatayama e Yuta Saito. "Modified electronic structure of amorphous Mn‐Si‐Te for OTS application: Improved thermal stability by the formation of Mn‐Te bonding". physica status solidi (RRL) – Rapid Research Letters, 23 de fevereiro de 2024. http://dx.doi.org/10.1002/pssr.202300474.
Texto completo da fonteLi, Xiao-Dong, Maoan Tian, Bai-Qian Wang, Nian-Ke Chen e Xian-Bin Li. "Atomic and electronic origin of robust off-state insulation properties in Al-rich AlxTey glass for ovonic threshold switching applications". Journal of Applied Physics 134, n.º 20 (28 de novembro de 2023). http://dx.doi.org/10.1063/5.0168408.
Texto completo da fonteLee, Jaesang, Seong Won Cho, Young Woong Lee, Joon Young Kwak, Jaewook Kim Kim, YeonJoo Jeong, Gyu Weon Hwang, Seongsik Park, SangBum Kim e Suyoun Lee. "Rational engineering of a switching material for the Ovonic threshold switching (OTS) device with mitigated electroforming". Journal of Materials Chemistry C, 2022. http://dx.doi.org/10.1039/d2tc03044f.
Texto completo da fonteJia, Shujing, Huanglong Li, Tamihiro Gotoh, Christophe Longeaud, Bin Zhang, Juan Lyu, Shilong Lv et al. "Ultrahigh drive current and large selectivity in GeS selector". Nature Communications 11, n.º 1 (15 de setembro de 2020). http://dx.doi.org/10.1038/s41467-020-18382-z.
Texto completo da fonteChai, Zheng, Weidong Zhang, Sergiu Clima, Firas Hatem, Robin Degraeve, Qihui Diao, Jian Fu Zhang et al. "Cycling induced metastable degradation in GeSe Ovonic threshold switching selector". IEEE Electron Device Letters, 2021, 1. http://dx.doi.org/10.1109/led.2021.3109582.
Texto completo da fonteSong, Bing, Hui Xu, Sen Liu, Haijun Liu, Qi Liu e Qingjiang Li. "An ovonic threshold switching selector based on Se-rich GeSe chalcogenide". Applied Physics A 125, n.º 11 (24 de outubro de 2019). http://dx.doi.org/10.1007/s00339-019-3073-z.
Texto completo da fonteGao, Tian, Jie Feng, Haili Ma e Xi Zhu. "The ovonic threshold switching characteristics in SixTe1−x based selector devices". Applied Physics A 124, n.º 11 (6 de outubro de 2018). http://dx.doi.org/10.1007/s00339-018-2153-9.
Texto completo da fonte