Literatura científica selecionada sobre o tema "Ovonic Threshold Selector (OTS)"
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Artigos de revistas sobre o assunto "Ovonic Threshold Selector (OTS)"
Zhang, Shiqing, Bing Song, Shujing Jia, Rongrong Cao, Sen Liu, Hui Xu e Qingjiang Li. "Multilayer doped-GeSe OTS selector for improved endurance and threshold voltage stability". Journal of Semiconductors 43, n.º 10 (1 de outubro de 2022): 104101. http://dx.doi.org/10.1088/1674-4926/43/10/104101.
Texto completo da fonteKim, Jaeyeon, Wansun Kim, Jusung Kim e Hyunchul Sohn. "Locally formed conductive filaments in an amorphous Ga2Te3 ovonic threshold switching device". AIP Advances 13, n.º 3 (1 de março de 2023): 035221. http://dx.doi.org/10.1063/5.0140715.
Texto completo da fonteWang, Lun, Jinyu Wen, Rongjiang Zhu, Jiangxi Chen, Hao Tong e Xiangshui Miao. "Failure mechanism investigation and endurance improvement in Te-rich Ge–Te based ovonic threshold switching selectors". Applied Physics Letters 121, n.º 19 (7 de novembro de 2022): 193501. http://dx.doi.org/10.1063/5.0127177.
Texto completo da fonteWu, Renjie, Yuting Sun, Shuhao Zhang, Zihao Zhao e Zhitang Song. "Great Potential of Si-Te Ovonic Threshold Selector in Electrical Performance and Scalability". Nanomaterials 13, n.º 6 (21 de março de 2023): 1114. http://dx.doi.org/10.3390/nano13061114.
Texto completo da fonteNoé, Pierre, Anthonin Verdy, Francesco d’Acapito, Jean-Baptiste Dory, Mathieu Bernard, Gabriele Navarro, Jean-Baptiste Jager, Jérôme Gaudin e Jean-Yves Raty. "Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed". Science Advances 6, n.º 9 (fevereiro de 2020): eaay2830. http://dx.doi.org/10.1126/sciadv.aay2830.
Texto completo da fonteSeong, Dongjun, Su Yeon Lee, Hyun Kyu Seo, Jong-Woo Kim, Minsoo Park e Min Kyu Yang. "Highly Reliable Ovonic Threshold Switch with TiN/GeTe/TiN Structure". Materials 16, n.º 5 (2 de março de 2023): 2066. http://dx.doi.org/10.3390/ma16052066.
Texto completo da fonteLaguna, C., M. Bernard, J. Garrione, F. Fillot, F. Aussenac, D. Rouchon, G. Lima, L. Militaru, A. Souifi e G. Navarro. "Inside the ovonic threshold switching (OTS) device based on GeSbSeN: Structural analysis under electrical and thermal stress". Journal of Applied Physics 133, n.º 7 (21 de fevereiro de 2023): 074501. http://dx.doi.org/10.1063/5.0134947.
Texto completo da fonteKim, Myoungsub, Youngjun Kim, Minkyu Lee, Seok Man Hong, Hyung Keun Kim, Sijung Yoo, Taehoon Kim, Seung-min Chung, Taeyoon Lee e Hyungjun Kim. "PE-ALD of Ge1−xSx amorphous chalcogenide alloys for OTS applications". Journal of Materials Chemistry C 9, n.º 18 (2021): 6006–13. http://dx.doi.org/10.1039/d1tc00650a.
Texto completo da fonteMinguet Lopez, J., T. Hirtzlin, M. Dampfhoffer, L. Grenouillet, L. Reganaz, G. Navarro, C. Carabasse et al. "OxRAM + OTS optimization for binarized neural network hardware implementation". Semiconductor Science and Technology 37, n.º 1 (8 de dezembro de 2021): 014001. http://dx.doi.org/10.1088/1361-6641/ac31e2.
Texto completo da fonteKweon, Jun Young, e Yun-Heup Song. "CMOS Based Ovonic Threshold Switching Emulation Circuitry". Journal of Nanoscience and Nanotechnology 20, n.º 8 (1 de agosto de 2020): 4977–79. http://dx.doi.org/10.1166/jnn.2020.17807.
Texto completo da fonteTrabalhos de conferências sobre o assunto "Ovonic Threshold Selector (OTS)"
Alayan, M., E. Vianello, G. Navarro, C. Carabasse, S. La Barbera, A. Verdy, N. Castellani et al. "In-depth investigation of programming and reading operations in RRAM cells integrated with Ovonic Threshold Switching (OTS) selectors". In 2017 IEEE International Electron Devices Meeting (IEDM). IEEE, 2017. http://dx.doi.org/10.1109/iedm.2017.8268311.
Texto completo da fonteBourgeois, G., V. Meli, R. Antonelli, C. Socquet-Clerc, T. Magis, F. Laulagnet, B. Hemard et al. "Crossbar Arrays based on “Wall” Phase-Change Memory (PCM) and Ovonic- Threshold Switching (OTS) Selector: a Device Integration Challenge Towards New Computing Paradigms in Embedded Applications". In 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, 2023. http://dx.doi.org/10.1109/edtm55494.2023.10102961.
Texto completo da fonteZhang, Shiqing, Bing Song, Shujing Jia, Rongrong Cao, Sen Liu, Hui Xu e Qingjiang Li. "A Symmetric Multilayer GeSe/GeSeSbTe Ovonic Threshold Switching Selector with Improved Endurance and Stability". In 2021 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA). IEEE, 2021. http://dx.doi.org/10.1109/icta53157.2021.9661914.
Texto completo da fonteWoo, Jiyong, e Shimeng Yu. "Design Space Exploration of Ovonic Threshold Switch (OTS) for Sub-Threshold Read Operation in Cross-Point Memory Arrays". In 2019 IEEE International Symposium on Circuits and Systems (ISCAS). IEEE, 2019. http://dx.doi.org/10.1109/iscas.2019.8702296.
Texto completo da fonteWoo, Jiyong, e Shimeng Yu. "Device Design and Material Considerations of Ovonic Threshold Switch (OTS) for Cross-point MRAM Array". In 2019 Electron Devices Technology and Manufacturing Conference (EDTM). IEEE, 2019. http://dx.doi.org/10.1109/edtm.2019.8731137.
Texto completo da fonteVerdy, A., M. Bernard, N. Castellani, P. Noé, C. Licitra, J. Garrione, G. Bourgeois, M. C. Cyrille e G. Navarro. "Engineering of Ovonic Threshold Switching Selector: A Link from the Material Properties to the Electrical Performances". In 2019 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2019. http://dx.doi.org/10.7567/ssdm.2019.h-7-03.
Texto completo da fonteGarbin, D., W. Devulder, R. Degraeve, G. L. Donadio, S. Clima, K. Opsomer, A. Fantini et al. "Composition Optimization and Device Understanding of Si-Ge-As-Te Ovonic Threshold Switch Selector with Excellent Endurance". In 2019 IEEE International Electron Devices Meeting (IEDM). IEEE, 2019. http://dx.doi.org/10.1109/iedm19573.2019.8993547.
Texto completo da fonteLee, Jangseop, Seonghun Kim, Sangmin Lee, Sanghyun Ban, Seongjae Heo, Donghwa Lee, Oleksandr Mosendz e Hyunsang Hwang. "Improving the SiGeAsTe Ovonic Threshold Switching (OTS) Characteristics by Microwave Annealing for Excellent Endurance (> 1011) and Low Drift Characteristics". In 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). IEEE, 2022. http://dx.doi.org/10.1109/vlsitechnologyandcir46769.2022.9830179.
Texto completo da fonteAvasarala, Naga Sruti, G. L. Donadio, T. Witters, K. Opsomer, B. Govoreanu, A. Fantini, S. Clima et al. "Half-threshold bias Ioff reduction down to nA range of thermally and electrically stable high-performance integrated OTS selector, obtained by Se enrichment and N-doping of thin GeSe layers". In 2018 IEEE Symposium on VLSI Technology. IEEE, 2018. http://dx.doi.org/10.1109/vlsit.2018.8510680.
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