Artigos de revistas sobre o tema "On-Wafer characterization"
Crie uma referência precisa em APA, MLA, Chicago, Harvard, e outros estilos
Veja os 50 melhores artigos de revistas para estudos sobre o assunto "On-Wafer characterization".
Ao lado de cada fonte na lista de referências, há um botão "Adicionar à bibliografia". Clique e geraremos automaticamente a citação bibliográfica do trabalho escolhido no estilo de citação de que você precisa: APA, MLA, Harvard, Chicago, Vancouver, etc.
Você também pode baixar o texto completo da publicação científica em formato .pdf e ler o resumo do trabalho online se estiver presente nos metadados.
Veja os artigos de revistas das mais diversas áreas científicas e compile uma bibliografia correta.
Saedon, Juri B., Siti Musalmah Md Ibrahim, Amir Radzi Abd Ghani e Muhammad Hafizi Bin Abd Razak. "Dicing Characterization on Optical Silicon Wafer Waveguide". Applied Mechanics and Materials 899 (junho de 2020): 163–68. http://dx.doi.org/10.4028/www.scientific.net/amm.899.163.
Texto completo da fonteKoolen, M. C. A. M. "On-wafer high-frequency device characterization". Microelectronic Engineering 19, n.º 1-4 (setembro de 1992): 679–86. http://dx.doi.org/10.1016/0167-9317(92)90521-r.
Texto completo da fonteLau, J. H., P.-J. Tzeng, C.-K. Lee, C.-J. Zhan, M.-J. Dai, Li Li, C.-T. Ko et al. "Wafer Bumping and Characterizations of Fine-Pitch Lead-Free Solder Microbumps on 12” (300mm) wafer for 3D IC Integration". International Symposium on Microelectronics 2011, n.º 1 (1 de janeiro de 2011): 000650–56. http://dx.doi.org/10.4071/isom-2011-wa6-paper2.
Texto completo da fonteTeixeira, Jorge, Mário Ribeiro e Nélson Pinho. "Advanced warpage characterization for FOWLP". International Symposium on Microelectronics 2013, n.º 1 (1 de janeiro de 2013): 000641–46. http://dx.doi.org/10.4071/isom-2013-wp21.
Texto completo da fonteKerepesi, Péter, Bernhard Rebhan, Matthias Danner, Karin Stadlmann, Heiko Groiss, Peter Oberhumer, Jiri Duchoslav e Kurt Hingerl. "Oxide-Free SiC-SiC Direct Wafer Bonding and Its Characterization". ECS Transactions 112, n.º 3 (29 de setembro de 2023): 159–72. http://dx.doi.org/10.1149/11203.0159ecst.
Texto completo da fonteDeleniv, Anatoly, Andrei Vorobiev e Spartak Gevorgian. "On-Wafer Characterization of Varactor Using Resonating Microprobes". IEEE Transactions on Microwave Theory and Techniques 56, n.º 5 (maio de 2008): 1105–11. http://dx.doi.org/10.1109/tmtt.2008.921283.
Texto completo da fonteLaskar, J., J. J. Bautista, M. Nishimoto, M. Hamai e R. Lai. "Development of accurate on-wafer, cryogenic characterization techniques". IEEE Transactions on Microwave Theory and Techniques 44, n.º 7 (julho de 1996): 1178–83. http://dx.doi.org/10.1109/22.508659.
Texto completo da fonteMoore, B., M. Margala e C. Backhouse. "Design of wireless on-wafer submicron characterization system". IEEE Transactions on Very Large Scale Integration (VLSI) Systems 13, n.º 2 (fevereiro de 2005): 169–80. http://dx.doi.org/10.1109/tvlsi.2004.840780.
Texto completo da fonteCHEN, CHIH-HUNG. "ACCURACY ISSUES OF ON-WAFER MICROWAVE NOISE MEASUREMENTS". Fluctuation and Noise Letters 08, n.º 03n04 (dezembro de 2008): L281—L303. http://dx.doi.org/10.1142/s0219477508005136.
Texto completo da fonteSeong, Inho, Jinho Lee, Sijun Kim, Youngseok Lee, Chulhee Cho, Jangjae Lee, Wonnyoung Jeong, Yebin You e Shinjae You. "Characterization of an Etch Profile at a Wafer Edge in Capacitively Coupled Plasma". Nanomaterials 12, n.º 22 (10 de novembro de 2022): 3963. http://dx.doi.org/10.3390/nano12223963.
Texto completo da fonteHong, Hao-Chiao, e Long-Yi Lin. "Accurate and Fast On-Wafer Test Circuitry for Device Array Characterization in Wafer Acceptance Test". IEEE Transactions on Circuits and Systems I: Regular Papers 66, n.º 9 (setembro de 2019): 3467–79. http://dx.doi.org/10.1109/tcsi.2019.2924251.
Texto completo da fonteKerepesi, Péter, Bernhard Rebhan, Matthias Danner, Karin Stadlmann, Heiko Groiss, Peter Oberhumer, Jiri Duchoslav e Kurt Hingerl. "Oxide-Free SiC-SiC Direct Wafer Bonding and Its Characterization". ECS Meeting Abstracts MA2023-02, n.º 33 (22 de dezembro de 2023): 1603. http://dx.doi.org/10.1149/ma2023-02331603mtgabs.
Texto completo da fonteField, Daniel E., James W. Pomeroy, Farzan Gity, Michael Schmidt, Pasqualino Torchia, Fan Li, Peter M. Gammon, Vishal A. Shah e Martin Kuball. "Thermal characterization of direct wafer bonded Si-on-SiC". Applied Physics Letters 120, n.º 11 (14 de março de 2022): 113503. http://dx.doi.org/10.1063/5.0080668.
Texto completo da fonteLiu, Kai, YongTaek Lee, HyunTai Kim, MaPhooPwint Hlaing, Susan Park e Billy Ahn. "Electrical Characterization on a High-Speed Wafer-Level Package". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, DPC (1 de janeiro de 2013): 001937–62. http://dx.doi.org/10.4071/2013dpc-tha23.
Texto completo da fonteKazemi Esfeh, Babak, Khaled Ben Ali e Jean-Pierre Raskin. "Compact On-Wafer Test Structures for Device RF Characterization". IEEE Transactions on Electron Devices 64, n.º 8 (agosto de 2017): 3101–7. http://dx.doi.org/10.1109/ted.2017.2717196.
Texto completo da fonteDunleavy, L. P., J. Randa, D. K. Walker, R. Billinger e J. Rice. "Characterization and applications of on-wafer diode noise sources". IEEE Transactions on Microwave Theory and Techniques 46, n.º 12 (1998): 2620–28. http://dx.doi.org/10.1109/22.739255.
Texto completo da fonteImai, M., Y. Miyamura, D. Murata e A. Ogi. "Characterization of SiGe Layer on Insulator by In-Plane Diffraction Method". Solid State Phenomena 108-109 (dezembro de 2005): 451–56. http://dx.doi.org/10.4028/www.scientific.net/ssp.108-109.451.
Texto completo da fonteHoff, A. M., e E. Oborina. "Fast Non-Contact Dielectric Characterization for SiC MOS Processing". Materials Science Forum 527-529 (outubro de 2006): 1035–38. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1035.
Texto completo da fonteCaddemi, Alina, Emanuele Cardillo, Giovanni Crupi, Luciano Boglione e Jason Roussos. "Microwave Linear Characterization Procedures of On-Wafer Scaled GaAs pHEMTs for Low-Noise Applications". Electronics 8, n.º 11 (18 de novembro de 2019): 1365. http://dx.doi.org/10.3390/electronics8111365.
Texto completo da fonteCavaco, Celso, Lan Peng, Koen De Leersnijder, Stefano Guerrieri, Deniz S. Tezcan e Haris Osman. "Copper Oxide Direct Bonding of 200mm CMOS Wafers: Morphological and Electrical Characterization". International Symposium on Microelectronics 2015, n.º 1 (1 de outubro de 2015): 000594–97. http://dx.doi.org/10.4071/isom-2015-tha26.
Texto completo da fonteMarino, Nobuaki, Kiichirou Murai e Yoshinori Kataora. "Characterization of Surface Contaminants by a Silver Film-Enhanced IR—Johnson Method". Applied Spectroscopy 51, n.º 10 (outubro de 1997): 1460–63. http://dx.doi.org/10.1366/0003702971939226.
Texto completo da fonteChun, C., A. Pham, J. Laskar e B. Hutchison. "Development of microwave package models utilizing on-wafer characterization techniques". IEEE Transactions on Microwave Theory and Techniques 45, n.º 10 (1997): 1948–54. http://dx.doi.org/10.1109/22.641800.
Texto completo da fonteSimons, R. N., e R. Q. Lee. "On-wafer characterization of millimeter-wave antennas for wireless applications". IEEE Transactions on Microwave Theory and Techniques 47, n.º 1 (1999): 92–96. http://dx.doi.org/10.1109/22.740086.
Texto completo da fonteRussell, Damon, Kieran Cleary e Rodrigo Reeves. "Cryogenic probe station for on-wafer characterization of electrical devices". Review of Scientific Instruments 83, n.º 4 (abril de 2012): 044703. http://dx.doi.org/10.1063/1.3700213.
Texto completo da fonteDescamps, Philippe, Dolphin Abessolo-Bidzo e Patrick Poirier. "Improved test structure for on-wafer microwave characterization of components". Microwave and Optical Technology Letters 53, n.º 2 (15 de dezembro de 2010): 249–54. http://dx.doi.org/10.1002/mop.25738.
Texto completo da fonteFresquet, Gilles, e Jean-Philippe Piel. "Optical Characterization and Defect inspection for 3D stacked IC technology". International Symposium on Microelectronics 2014, n.º 1 (1 de outubro de 2014): 000630–34. http://dx.doi.org/10.4071/isom-wp17.
Texto completo da fonteKim, Taehyun, Sangwug Han, Jubum Lee, Yeeun Na, Joontaek Jung, Yun Chang Park, Jaesub Oh, Chungmo Yang e Hee Yeoun Kim. "Development and Characterization of Low Temperature Wafer-Level Vacuum Packaging Using Cu-Sn Bonding and Nanomultilayer Getter". Micromachines 14, n.º 2 (14 de fevereiro de 2023): 448. http://dx.doi.org/10.3390/mi14020448.
Texto completo da fonteMajeed, Bivragh, Chengxun Liu, Erik Sohn, Lut Van Acker, Koen De Wijs, Deniz Sabuncuoglu e Liesbet Lagae. "Silicon based cell sorting device: Fabrication, characterization and applications". International Symposium on Microelectronics 2016, n.º 1 (1 de outubro de 2016): 000019–24. http://dx.doi.org/10.4071/isom-2016-tp15.
Texto completo da fonteHaisu, M., Uda Hashim e Q. Humayun. "Micro-Gap Electrodes Fabrication by Low Cost Conventional Photo Lithography Technique and Surface Characterization by Nanoprofiler". Advanced Materials Research 925 (abril de 2014): 635–40. http://dx.doi.org/10.4028/www.scientific.net/amr.925.635.
Texto completo da fonteCakmak, Erkan, Bioh Kim e Viorel Dragoi. "Characterization of Wafer Level Metal Thermo-Compression Bonding". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, DPC (1 de janeiro de 2010): 002326–60. http://dx.doi.org/10.4071/2010dpc-tha34.
Texto completo da fonteINABA, Michihiko. "Present and Future of Surface Characterization. Surface Characterization on Si Wafer for Semiconductor Devices." Journal of the Japan Society for Precision Engineering 61, n.º 11 (1995): 1511–15. http://dx.doi.org/10.2493/jjspe.61.1511.
Texto completo da fonteTajima, Michio, E. Higashi, Toshihiko Hayashi, Hiroyuki Kinoshita e Hiromu Shiomi. "Characterization of SiC Wafers by Photoluminescence Mapping". Materials Science Forum 527-529 (outubro de 2006): 711–16. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.711.
Texto completo da fonteYu, Hengshu, Junbo Wang, Yulan Lu, Bo Xie, Yanlong Shang e Zhao Liu. "A silicon resonant pressure sensor based on thermal stresses matched structures". Journal of Physics: Conference Series 2740, n.º 1 (1 de abril de 2024): 012041. http://dx.doi.org/10.1088/1742-6596/2740/1/012041.
Texto completo da fonteFerrero, A., e U. Pisani. "An improved calibration technique for on-wafer large-signal transistor characterization". IEEE Transactions on Instrumentation and Measurement 42, n.º 2 (abril de 1993): 360–64. http://dx.doi.org/10.1109/19.278582.
Texto completo da fonteArcher, J. W., e R. A. Batchelor. "Fully automated on-wafer noise characterization of GaAs MESFETs and HEMTs". IEEE Transactions on Microwave Theory and Techniques 40, n.º 2 (1992): 209–16. http://dx.doi.org/10.1109/22.120092.
Texto completo da fonteScholz, M., D. Linten, S. Thijs, S. Sangameswaran, M. Sawada, T. Nakaei, T. Hasebe e G. Groeseneken. "ESD On-Wafer Characterization: Is TLP Still the Right Measurement Tool?" IEEE Transactions on Instrumentation and Measurement 58, n.º 10 (outubro de 2009): 3418–26. http://dx.doi.org/10.1109/tim.2009.2017657.
Texto completo da fonteTiemeijer, Luuk F., Ralf M. T. Pijper e Edwin van der Heijden. "Complete On-Wafer Noise-Figure Characterization of 60-GHz Differential Amplifiers". IEEE Transactions on Microwave Theory and Techniques 58, n.º 6 (junho de 2010): 1599–608. http://dx.doi.org/10.1109/tmtt.2010.2049167.
Texto completo da fonteCaddemi, A., e N. Donato. "Temperature-dependent noise characterization and modeling of on-wafer microwave transistors". Microelectronics Reliability 42, n.º 3 (março de 2002): 361–66. http://dx.doi.org/10.1016/s0026-2714(02)00004-5.
Texto completo da fonteLinz, Sarah, Florian Oesterle, Stefan Lindner, Sebastian Mann, Robert Weigel e Alexander Koelpin. "Test Method for Contactless On-Wafer MEMS Characterization and Production Monitoring". IEEE Transactions on Microwave Theory and Techniques 64, n.º 11 (novembro de 2016): 3918–26. http://dx.doi.org/10.1109/tmtt.2016.2612664.
Texto completo da fonteTerayama, Yuki, Motoyasu Kobayashi, Sono Sasaki, Osami Sakata e Atsushi Takahara. "Structural Characterization of Surface-grafted Poly (Vinyl Alcohol) on Silicon Wafer". Transactions of the Materials Research Society of Japan 32, n.º 1 (2007): 259–62. http://dx.doi.org/10.14723/tmrsj.32.259.
Texto completo da fonteStake, Jan, e Hans Grönqvist. "An on-wafer method for C-V characterization of heterostructure diodes". Microwave and Optical Technology Letters 9, n.º 2 (5 de junho de 1995): 63–66. http://dx.doi.org/10.1002/mop.4650090202.
Texto completo da fonteLederer, Dimitri, e Jean-Pierre Raskin. "On-wafer wideband characterization: a powerful tool for improving the IC technologies". Journal of Telecommunications and Information Technology, n.º 2 (25 de junho de 2023): 69–77. http://dx.doi.org/10.26636/jtit.2007.2.811.
Texto completo da fonteTorimi, Satoshi, Norihito Yabuki, Takuya Sakaguchi, Masato Shinohara, Yoji Teramoto, Satoru Nogami, Makoto Kitabatake e Junji Senzaki. "Characterization of pn-Diode Fabricated from Surface Damage-Free 4H-SiC Wafer Using Si-Vapor Etching Process". Materials Science Forum 924 (junho de 2018): 349–52. http://dx.doi.org/10.4028/www.scientific.net/msf.924.349.
Texto completo da fonteWang, Yibang, Xingchang Fu, Aihua Wu, Chen Liu, Peng Luan, Faguo Liang, Wei Zhao e Xiaobang Shang. "Development of gallium-arsenide-based GCPW calibration kits for on-wafer measurements in the W-band". International Journal of Microwave and Wireless Technologies 12, n.º 5 (12 de dezembro de 2019): 367–71. http://dx.doi.org/10.1017/s1759078719001521.
Texto completo da fonteZhu, Liang, Biao Mei, Weidong Zhu e Wei Li. "Laser-based Thickness Control in a Double-Side Polishing System for Silicon Wafers". Sensors 20, n.º 6 (13 de março de 2020): 1603. http://dx.doi.org/10.3390/s20061603.
Texto completo da fonteChan, Mu-Hsuan, Yu-Po Wang, Ivan Chang, James Chiang, George Pan, Nicholas Kao e David Wang. "Development and Challenges of Warpage for Fan-Out Wafer-Level Package Technology". International Symposium on Microelectronics 2016, n.º 1 (1 de outubro de 2016): 000524–28. http://dx.doi.org/10.4071/isom-2016-poster4.
Texto completo da fonteHan, Chansu, Yoonsung Koo, Jaehwan Kim, Kwangwook Choi e Sangjeen Hong. "Wafer Type Ion Energy Monitoring Sensor for Plasma Diagnosis". Sensors 23, n.º 5 (22 de fevereiro de 2023): 2410. http://dx.doi.org/10.3390/s23052410.
Texto completo da fonteMarzouk, Jaouad, Steve Arscott, Abdelhatif El Fellahi, Kamel Haddadi, Tuami Lasri, Christophe Boyaval e Gilles Dambrine. "MEMS probes for on-wafer RF microwave characterization of future microelectronics: design, fabrication and characterization". Journal of Micromechanics and Microengineering 25, n.º 7 (24 de junho de 2015): 075024. http://dx.doi.org/10.1088/0960-1317/25/7/075024.
Texto completo da fonteArias, Abraham, Nicola Nedev, Mario Curiel, Diana Nesheva, Emil Manolov, Benjamin Valdez, David Mateos, Oscar Contreras, Oscar Raymond e Jesus M. Siqueiros. "Electrical Characterization of Interface Defects in MOS Structures Containing Silicon Nanoclusters". Advanced Materials Research 976 (junho de 2014): 129–32. http://dx.doi.org/10.4028/www.scientific.net/amr.976.129.
Texto completo da fonteNeudeck, Philip G., Liang Yu Chen, David J. Spry, Glenn M. Beheim e Carl W. Chang. "Electrical Characterization of a 4H-SiC JFET Wafer: DC Parameter Variations for Extreme Temperature IC Design". Materials Science Forum 821-823 (junho de 2015): 781–84. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.781.
Texto completo da fonte