Teses / dissertações sobre o tema "On-Wafer characterization"
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Lee, Jun Seok. "On-Wafer Characterization of Electromagnetic Properties of Thin-Film RF Materials". The Ohio State University, 2011. http://rave.ohiolink.edu/etdc/view?acc_num=osu1308311479.
Texto completo da fonteCabbia, Marco. "(Sub)-millimeter wave on-wafer calibration and device characterization". Thesis, Bordeaux, 2021. http://www.theses.fr/2021BORD0017.
Texto completo da fontePrecision measurements play a crucial role in electronic engineering, particularly in the characterization of silicon-based heterojunction bipolar transistors (HBTs) embedded into devices for THz applications using the BiCMOS technology. Thanks to ongoing innovations in terms of nanoscale technology manufacturing, devices capable of operating in the sub-millimeter wave region are becoming a reality, and need to support the demand for high frequency circuits and systems. To have accurate models at such frequencies, it is no longer possible to limit the parameter extraction below 110 GHz, and new techniques for obtaining reliable measurements of passive and active devices must be investigated.In this thesis, we examine the on-wafer S-parameters characterization of various passive test structures and SiGe HBTs in STMicroelectronics' B55 technology, up to 500 GHz. We start with an introduction of the measuring equipment usually employed for this type of analysis, then moving on to the various probe stations adopted at the IMS Laboratory, and finally focusing on calibration and deembedding techniques, reviewing the major criticalities of high-frequency characterization and comparing two on-wafer calibration algorithms (SOLT and TRL) up to the WR-2.2 band.Two photomask production runs for on-wafer characterization, both designed at IMS, are considered: we introduce a new floorplan design and evaluate its ability to limit parasitic effects as well as the effect of the environment (substrate, neighbors, and crosstalk). For our analysis, we rely on electromagnetic simulations and joint device model + probe EM simulations, both including probe models for an evaluation of measurement results closer to real-world conditions.Finally, we present some test structures to evaluate unwanted impacts on millimeter wave measurements and novel transmission line design solutions. Two promising designs are carefully studied: the "M3 layout", which aims to characterize the DUT in a single-tier calibration, and the "meander lines", which keeps the inter-probe distance constant by avoiding any sort of probe displacement during on-wafer measurements
Maranon, Walter. "Characterization of Boron Nitride Thin Films on Silicon (100) Wafer". Thesis, University of North Texas, 2007. https://digital.library.unt.edu/ark:/67531/metadc3942/.
Texto completo da fonteLi, Ling-Guang. "Fabrication and Characterization of Si-on-SiC Hybrid Substrates". Doctoral thesis, Uppsala universitet, Fasta tillståndets elektronik, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-221664.
Texto completo da fonteLi, Qian. "SIGNAL INTEGRITY ANALYSIS ON MATERIALS AND VIA STRUCTURES MODELING AND CHARACTERIZATION". Diss., The University of Arizona, 2011. http://hdl.handle.net/10150/203472.
Texto completo da fonteShaporin, Alexey. "Dynamic parameter identification techniques and test structures for microsystems characterization on wafer level". Doctoral thesis, Chemnitz Univ.-Verl, 2009. http://d-nb.info/1000815250/04.
Texto completo da fonteShaporin, Alexey. "Dynamic parameter identification techniques and test structures for microsystems characterization on wafer level". Doctoral thesis, Universitätsbibliothek Chemnitz, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200901902.
Texto completo da fonteIn this work a method for the characterization of microsystems with movable components is presented. The method allows to determine the relevant parameters and their variations on wafer level if the nominal shape of the structure and the type of deviations are known. The method is based on a comparison of the numerically calculated and experimentally measured Eigenfrequencies of the microsystems. For that purpose, the relationships between various Eigenfrequencies and the searched parameters are calculated by parameter variation analysis and the results of this analysis are approximated with appropriate functions. A Laser Doppler vibrometer based motion analyzer is used to determine the frequency response function of the micromechanical structure and extract Eigenfrequencies. The comparison of the measured and the calculated frequencies provides values for the searched parameters. The key element of the developed method is the measurement on special test structures that are placed in the wafer layout next to the actual microsystems and processed in the same technological process parallel to the actual microsystems. Algorithms for designing the test structures and their placement in the wafer layout are shown, taking into account the design of the actual microsystems and the function parameters of the technological process as well as material characteristics. As a result, a library of standard test structures for function relevant parameters is available. A general guideline for the measurement on the test structures is presented. The presented method is verified on various microsystems and extended to a whole class of microsystems with movable components
Jamshidifar, Mehran [Verfasser]. "On-wafer characterization of mm-wave and THz circuits using electrooptic sampling / Mehran Jamshidifar". Siegen : Universitätsbibliothek der Universität Siegen, 2017. http://d-nb.info/112945326X/34.
Texto completo da fonteLotfi, Sara. "Design and Characterization of RF-LDMOS Transistors and Si-on-SiC Hybrid Substrates". Doctoral thesis, Uppsala universitet, Fasta tillståndets elektronik, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-215390.
Texto completo da fonteZhao, Lv. "On the fracture of solar grade crystalline silicon wafer". Thesis, Lyon, 2016. http://www.theses.fr/2016LYSEI134/document.
Texto completo da fonteThe profitability of silicon solar cells is a critical point for the PV market and it requires improved electrical performance, lower wafer production costs and enhancing reliability and durability of the cells. Innovative processes are emerging that provide thinner wafers with less raw material loss. But the induced crystallinity and distribution of defects compared to the classical wafers are unclear. It is therefore necessary to develop methods of microstructural and mechanical characterization to assess the rigidity and mechanical strength of these materials. In this work, 4-point bending tests were performed under quasi-static loading. This allowed to conduct both the stiffness estimation and the rupture study. A high speed camera was set up in order to track the fracture process thanks to a 45° tilted mirror. Fractographic analysis were performed using confocal optical microscope, scanning electron microscope and atomic force microscope. Electron Back-Scatter Diffraction and Laue X-Ray diffraction were used to explore the relationship between the microstructural grains orientations/textures of our material and the observed mechanical behavior. Jointly, finite element modeling and simulations were carried out to provide auxiliary characterization tools and help to understand the involved fracture mechanism. Thanks to the experiment-simulation coupled method, we have assessed accurately the rigidity of silicon wafers stemming from different manufacturing processes. A fracture origin identification strategy has been proposed combining high speed imaging and post-mortem fractography. Fracture investigations on silicon single crystals have highlighted the deflection free (110) cleavage path, the high initial crack velocity, the velocity dependent crack front shape and the onset of front waves in high velocity crack propagation. The investigations on the fracture of multi-crystalline wafers demonstrate a systematic transgranular cracking. Furthermore, thanks to twin multi-crystalline silicon plates, we have addressed the crack path reproducibility. A special attention has been paid to the nature of the cleavage planes and the grain boundaries barrier effect. Finally, based on these observations, an extended finite element model (XFEM) has been carried out which fairly reproduces the experimental crack path
Cresci, David John. "On-wafer characterization of ground vias in multilayer FR-4 printed circuit boards at RF/microwave frequencies". Thesis, Georgia Institute of Technology, 1998. http://hdl.handle.net/1853/15806.
Texto completo da fonteShaporin, Alexey [Verfasser]. "Dynamic parameter identification techniques and test structures for microsystems characterization on wafer level / Alexey Shaporin. Technische Universität, Chemnitz". Chemnitz : Univ.-Verl, 2009. http://d-nb.info/1001561546/34.
Texto completo da fonteCaglayan, Cosan. "Non-Contact Probes: A Novel Approach for On-Wafer Characterization of Millimeter-Wave and Sub-Millimeter-Wave Devices and Integrated Circuits". The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1461163685.
Texto completo da fonteRumiantsev, Andrej [Verfasser], e Matthias [Akademischer Betreuer] Rudolph. "On-Wafer calibration techniques enabling accurate characterization of high-performance silicon devices at the mm-wave range and beyond / Andrej Rumiantsev. Betreuer: Matthias Rudolph". Cottbus : Universitätsbibliothek der BTU Cottbus, 2014. http://d-nb.info/105009915X/34.
Texto completo da fonteDavy, Nil. "Optimisation du transistor bipolaire à double hétérojonction sur substrat d’InP (TBDH InP) pour circuits intégrés ultra-rapides". Electronic Thesis or Diss., Bordeaux, 2024. http://www.theses.fr/2024BORD0043.
Texto completo da fonteIn the era of information technology, we are witnessing a continuous increase in the volume of exchanged data. This comes with a constant need to enhance the bandwidth of optical and radio-frequency communication systems. The ongoing demand for increased bandwidth requires the design of faster circuits capable of supporting the growing data traffic. These circuits, in turn, must rely on ever-faster electronic component technologies. It is in this context that double-heterojunction bipolar transistors (DHBTs) in InP/InGaAs are developed. Thanks to the properties of III-V semiconductors, these components can operate at very high frequencies (> 500 GHz) while maintaining a relatively high breakdown voltage (> 4V).This thesis focus on improving the performance of these components. We will begin by addressing the improvement of high-frequency measurements of transistors to evaluate their frequency performance. We will delve into various choices associated with measurements (calibration, de-embedding, RF probe models) and introduce new measurement pads. In the second part, we will develop an analytical model, taking into account the specifics of the design and technology of the component. Once calibrated on measurements, this model will be used to determine the main axes for improving performance. Next, we will study the performance of several epitaxial structures with the aim of reducing electron transit time while maximizing frequency performance. A new structure, optimized to maximize the transition frequency without degrading the maximum oscillation frequency, will be proposed. Subsequently, we will investigate the physical phenomena limiting the breakdown voltage of the transistor. Finally, we will focus on the self-heating phenomenon that degrades transistor performance. We will propose a thermal resistance model and associated improvement strategies
chan, Ya-Cun, e 詹雅存. "Characterization of Antibody Grafted on Silicon Wafer". Thesis, 2008. http://ndltd.ncl.edu.tw/handle/43739748883370718257.
Texto completo da fonte逢甲大學
化學工程學所
96
The aim of this study was to fix the antibodies on the substrates with different ways of bonding. A self-assembled monolayer(SAM) was firmly formed on the surface of silicon wafer through chemistry absorbed or bonding. Its interactive bonding was includes Vander Waals forces and Hydrogen bonds. First, a heating treats the surface of wafer to form O-H bonds on the wafer surface, then self-assembled monolayer on silane molecule 3-Aminopropyl trimethoxysilane (APTMS) was formed on modify silicon wafer. We activated the adipic acid carboxyl and adipoyl chloride COCl base respectively, then bonding those with the amine base of APTMS. The same process was applied to the bonding process of the Rabbit anti-mouse IgG-FITC on silicon wafer. In order to demonstrated the self-assembled APTMS monolayer film on substrate. The modify silicon wafer immersed in goldnano solution, the amine base have good affinity effects to absorb goldnano particles. The surface morphology of these layers was studied by the atomic force microscope (AFM). The fluorescence measurement of antibodies was by fluorescent microscope. The parts of adipic acid conjugated rabbit anti-mouse IgG-FITC (IgG), the fluorescence effects are still unclear, which means antibodies oneself fluorescence effects was weak after fluorescence emission. Before the adipic acid conjugated fluorescence antibodies, it was dark on silicon wafer totally. On the parts of adipoyl chloride conjugated IgG, it gave a clear picture of a fluorescence microscope, this work demonstrated the fluorescence antibodies conjugate on the silicon wafer. Furthermore, we utilize a modifying probe by silane molecule APTMS self-assembled, to measurements the surface morphology of fluorescence antibodies layers on the silicon wafer. This work demonstrated the modify probe with the amine base has good affinity effects on carboxyl of fluorescence antibodies. The kind of affinity effect was a help to the surface morphology by AFM measurements.
Wu, Ming-lun, e 吳明崙. "Preparation and Optical Characterization of Nanostructures on Silicon Wafer and ZnO Films". Thesis, 2013. http://ndltd.ncl.edu.tw/handle/34962665205125316068.
Texto completo da fonte國立臺南大學
材料科學系碩士班
101
Low conversion efficiency is still the main limiting factor for current solar cells. Most of the energy loss during solar cell operation is attributed to light reflection. To reduce the light reflection, we can change the path of light entering the solar-cell. In addition, to increase the energy conversion efficiency, light trapping is a key point to the cell structure. We can increase light trapping by a textured transparent conduction oxide (TCO) layer. Because the textured films can enhance the light trapping, the textured TCO films can get thinner compared with the thicker flat films. There are two parts in this study. First, we etched the pyramidal structure on silicon wafer to get the hierarchical structure by an electroless metal deposition-assisted etching method. We changed the Ag deposition time, etching temperature, HF concentration, H2O2 concentration and etching time, and discussed the influence of the different parameters on the structure and optical properties of the silicon wafer. Second, we used a sol-gel method to get the textured ZnO films. We changed sol-gel concentration, different preheat temperature, different heat treatment temperature, to discuss the influence of different parameter on the preparation of wrinkles films. Then we got high transmittance, high haze, low resistivity by coating FTO films on ZnO films. We showed the lowest reflectance about 1.7 % at wavelength 550 nm by moderating the H2O2 concentration during Si etching. By changing zinc oxide concentration, we showed the best result of about 72.2 % haze, 83 % transmittance and sheet resistance 44 Ω/□. ZnO wrinkles will be impressed by the doping of Al and their dimensions get flatter, resulting the ZnO films with a lower haze.
Chu, Chi-Chih, e 朱吉植. "Study on Wafer-Level Packaging and Electrochemical Characterization of Planar Silver-Chloride Micro Reference Electrode". Thesis, 2008. http://ndltd.ncl.edu.tw/handle/ru9h7t.
Texto completo da fonte國立中山大學
電機工程學系研究所
96
This thesis devotes to develop a wafer-level packaging technique of the planar AgCl-based micro reference electrode and to investigate its various electrochemical characteristics (including the potential stability and offset voltage, AC impedance, cyclic-voltammetry analysis, electrochemical noise and reproducibility). The miniaturized all-solid-state reference electrode can integrated with many biomedical or biochemical sensors for substantially reduce the dimension of the whole sensing system and improve the commercial capability of portable detecting products. This study reports firstly a smallest module of the micro reference electrode with dimension only about 9 mm (L) × 6 mm (W) × 1 mm (H) in the worldwide using the silicon bulk-micromachining technology, thin film deposition and chloridation techniques. The packaged reference electrode module is constructed by two bonded wafers with different functions. One wafer of this module is defined as “electrode chip” and it has a Ti/Pd/Ag/AgCl planar quasi-reference electrode deposited on its surface. Another wafer is called as “packaging chip” and it has two bulk-micromachined silicon cavities for the filling/sealing of 1.33 ~ 6.40 μL KCl-gel (as the salt-bridge of electrode) and electrical connection. Many electrochemical characteristics of the encapsulated solid-state micro reference electrode are tested and improved for the commercial applications. Including a very stable cell potential (<4 mV in 30000 sec.), an approximately zero offset-voltage, a low AC impedance (1~20 KΩ), and high reproducibility (drift less than 3~8 mV in 30000 sec. and the range of offset voltage is -6 ~ 3 mV) of the packaged micro reference electrode are demonstrated. Furthermore, stable CV curve of the packaged Ti/Pd/Ag/AgCl/KCl-gel reference electrode were proved by cyclic-voltammetry analysis and its low electrochemical noise spectrum was investigated and discussed in this work. Compared with the commercial reference electrode, the planar miniaturized AgCl reference electrode module developed in this thesis has displayed its many excellent characteristics and with a dimension only 250 times smaller than the conventional reference electrode.
Jiang, Cin-Han, e 姜欽瀚. "Characterization of patterned PGMA brushes on silicon wafer via surface-initiated ATRP for immobilization of quantum dots". Thesis, 2012. http://ndltd.ncl.edu.tw/handle/25919135362495140248.
Texto completo da fonte國立臺灣科技大學
材料科學與工程系
100
This study consisted of two parts, the first one was the fabrication of polymer brushes on silicon wafer, including surface hydrophilic modification, the synthesis of the silane self assembly monolayer (SAM), the immobilization of the initiator of polymerization, and the polymerization of Poly(glycidyl methacrylate) brushes (PGMA) initiated from the surface of silicon wafer via atom transfer radical polymerization (ATRP). By varying the polymerization time, we achieved different thickness of PGMA brushes between 15.7 and 110.0nm. Chemical analysis by Fourier transform infrared spectroscope (FT-IR) and Electron spectroscopy for chemical analysis system (ESCA) demonstrated the surface after ATRP contained lots of C-H and C-O/C=O bonds, and the content of carbon and oxygen was 71.68% and 28.04%. Atomic force microscope (AFM) analysis showed the roughness increased from 0.202nm to 1.056nm after ATRP. Additionally, we used the linear photoresist-modified wafers fabricated by lithography to form the silane SAM, and the photoresist was removed prior to immobilize the ATRP initiator. Sequentially, we synthesized the patterned PGMA brushes with difference height and width by varying the reaction time of ATRP and the scales of the photoresist. AFM analysis showed the maximum height of linear pattern reached to 113.1nm. High reactivity of the epoxy ring on the PGMA side chain makes it a good position for ring-opening addition reaction. The second part of this study included the synthesis of the hydroxyl-capped Cadmium sulfide, and took it as a nucleophile to bind to the epoxy ring on PGMA. Thus, we obtained the fluorescent patterned PGMA brushes. The particle size of CdS obtained by Field emission transmission electron microscope (TEM) image was 5nm, and the 578nm emission light was analyzed by Photoluminescence spectrometry (PL). ESCA analysis showed the content of cadmium and sulfur was 2.68% and 3.79% from the CdS-PGMA brushes. Finally, Spectral confocal and multiphoton system (SCMS) imaged the different width fluorescent patterns, and demonstrated CdS was bound to the patterned PGMA brushes.
Chang-Chien, Min-Yu, e 張簡民佑. "Accuracy improvement for LST calibration technique with applications of on-wafer device characterizations in millimeter wave regions". Thesis, 2009. http://ndltd.ncl.edu.tw/handle/97667042965885370822.
Texto completo da fonte元智大學
通訊工程學系
97
This thesis improves the LST(Line-Series-shunT) calibration technique of resistor which must be lumped device, and can be achieves for on-wafer S-parameter measurement of GaAs 0.15 p-HEMT devices. In addition, characteristic impedance of the transmission line also is be evaluated. The DUT of real characteristic data finally can be extracted by the method of characteristic impedance mapping. Goal of the thesis is completed for accuracy improvement for LST calibration technique. Besides, original LST calibration technique presents a method of getting characteristic impedance of the transmission line by self-calibration. The method is be demonstrated for on-wafer S-parameter measurement of TSMC 0.18 CMOS devices in millimeter wave regions.