Bibliografias temáticas / Ohmic sintering

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Literatura científica selecionada sobre o tema "Ohmic sintering"

Autor: Grafiati

Publicado: 8 de fevereiro de 2025

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Artigos de revistas sobre o assunto "Ohmic sintering"

Fan, Ji Wei, Xiao Peng Li, Zhen Guo Zhang, Zhi Qiang Jiao, Xiang Yang Liu, Wen Jing Zhang, Poonsuk Poosimma e Robert Freer. "The Effects of Cu Dopant on the Microstructure and Non-Ohmic Electrical Properties of ZnO Varistors". Advanced Materials Research 343-344 (setembro de 2011): 160–65. http://dx.doi.org/10.4028/www.scientific.net/amr.343-344.160.

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The doping effects of Cu on the microstructure and non-ohmic electrical properties of ZnO varistors were studied. Addition of Cu2O can enhance the ZnO grain growth during sintering. The SEM and EDS results revealed that the added Cu mainly distributed in the grain boundary and spinel phases of ZnO varistors. The Cu2O addition increased the both of grain and grain boundary resistances. However it decreased the non-ohmic electrical characteristics of ZnO varistors, which is a good agreement with similar findings on Ag2O additions, but contrasts to the reports of good non-ohmic electrical property which found on binary Cu doped ZnO varistors.

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Zhou, Liqin, e Changkui Yu. "Sintering and properties of low-firing non-ohmic SrTiO3 ceramics". Journal of Materials Science 29, n.º 22 (novembro de 1994): 6055–59. http://dx.doi.org/10.1007/bf00366893.

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Peng, Chengxin, Bingxiang Zhao, Xie Meng, Xiaofeng Ye, Ting Luo, Xianshuang Xin e Zhaoyin Wen. "Effect of NiO Addition on the Sintering and Electrochemical Properties of BaCe0.55Zr0.35Y0.1O3-δ Proton-Conducting Ceramic Electrolyte". Membranes 14, n.º 3 (27 de fevereiro de 2024): 61. http://dx.doi.org/10.3390/membranes14030061.

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Proton ceramic fuel cells offer numerous advantages compared with conventional fuel cells. However, the practical implementation of these cells is hindered by the poor sintering activity of the electrolyte. Despite extensive research efforts to improve the sintering activity of BCZY, the systematic exploration of the utilization of NiO as a sintering additive remains insufficient. In this study, we developed a novel BaCe0.55Zr0.35Y0.1O3-δ (BCZY) electrolyte and systematically investigated the impact of adding different amounts of NiO on the sintering activity and electrochemical performance of BCZY. XRD results demonstrate that pure-phase BCZY can be obtained by sintering the material synthesized via solid-state reaction at 1400 °C for 10 h. SEM analysis revealed that the addition of NiO has positive effects on the densification and grain growth of BCZY, while significantly reducing the sintering temperature required for densification. Nearly fully densified BCZY ceramics can be obtained by adding 0.5 wt.% NiO and annealing at 1350 °C for 5 h. The addition of NiO exhibits positive effects on the densification and grain growth of BCZY, significantly reducing the sintering temperature required for densification. An anode-supported full cell using BCZY with 0.5 wt.% NiO as the electrolyte reveals a maximum power density of 690 mW cm−2 and an ohmic resistance of 0.189 Ω cm2 at 650 °C. Within 100 h of long-term testing, the recorded current density remained relatively stable, demonstrating excellent electrochemical performance.

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Ramírez, M. A., P. R. Bueno, E. Longo e J. A. Varela. "Conventional and microwave sintering of CaCu3Ti4O12/CaTiO3ceramic composites: non-ohmic and dielectric properties". Journal of Physics D: Applied Physics 41, n.º 15 (3 de julho de 2008): 152004. http://dx.doi.org/10.1088/0022-3727/41/15/152004.

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Nahm, Choon-W. "Sintering temperature dependence on microstructure and non-ohmic properties of ZVMND ceramic semiconductors". Journal of Materials Science: Materials in Electronics 27, n.º 9 (24 de maio de 2016): 9520–25. http://dx.doi.org/10.1007/s10854-016-5003-6.

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El-Hofy, M. "Non-Ohmic Behavior of Some ZnO Ceramic Defective Ions with Different Valences". Defect and Diffusion Forum 293 (agosto de 2009): 91–97. http://dx.doi.org/10.4028/www.scientific.net/ddf.293.91.

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ZnO ceramic samples with the chemical formula, 97ZnO-2BaO-1(X)Mol% (where X= CuO, Fe2O3, TiO2, V2O5, MoO3) have been prepared by using conventional ceramics techniques. The samples were sintered at 1200°C for 1, 1.5 or 2h. The metal ions were chosen such that their ionic radii were just slightly different, whereas their ion valences varied from 2+ in case of Cu to 6+ for Mo. Room-temperature I-V characteristics, microstructures, linear scans and X-ray patterns were then studied. The microstructure and linear scan data revealed that, in the case of Cu-, Fe-, V- and Mo-doped ceramics, the doped ions resided mainly at the grain boundaries while, in case of Ti-doping, the ions resided mainly in the grain interior. The electrical measurements and the linear scan data showed that both the non-linearity parameter, α, and the rate of change of α with sintering time, (dα/dt), was exponentially proportional to the valence of the doped ion, where t is a sintering time in the range of 1 to 2h. The leakage current, JL, is linearly proportional to the amount of doped ion present in the grain interior, relative to that present at the boundaries. The X-ray data revealed that the obtained phase was the hexagonal ZnO phase, with traces of secondary phase related to the doped ion; the secondary phases were identified as being Fe2O3, BaTi5O11, Zn3(VO4)2 and (ZnMoO4) in case of Fe-, Ti-, V- and Mo-doped ceramics, respectively. The relative intensity of the X-ray peak at 2θ = 34.45, corresponding to the (0002) plane, was exponentially proportional to the valence of the doped ion; while α scaled with the relative intensity of the aforementioned X-ray peak.

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Galizia, Pietro, e Carmen Galassi. "Electrophoretic Deposition of Bilayer Based on Sacrificial Titanium Dioxide and Lead Zirconate Titanate on Bare Silicon Wafer". Key Engineering Materials 654 (julho de 2015): 132–35. http://dx.doi.org/10.4028/www.scientific.net/kem.654.132.

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Bilayer thick films of sacrificial titanium dioxide and Nb-doped lead zirconate titanate (PZTN) have been deposited on bare silicon wafers using electrophoretic deposition (EPD) technique. Deposition of such ceramic particles, dispersed ethanol-based suspensions, on semiconductor substrate has been made possible after preparation of alloyed junctions Al/Si characterized by ohmic behaviour. Sintering of green TiO2/PZTN films was performed at 900 °C for 1 h. The composition of the films, the thickness and relative density of the deposited materials have been analysed by EDS-SEM analysis. The lead diffusion through the silicon wafer has been reduced.

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Dubey, Pawan Kumar Kumar, Junsung Hong, Kevin X. Lee, Seraphim Belko, Ashish Aphale, Muhammad Anisur Rahman, Michael Reisert e Prabhakar Singh. "Electrical Conductivity and Electrochemical Performance of Pr Doped Ceria". ECS Transactions 111, n.º 6 (19 de maio de 2023): 91–103. http://dx.doi.org/10.1149/11106.0091ecst.

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PCO (Praseodymium Cerium Oxide) solid solution (0-50% PrOx) has been prepared by the conventional solid-state ceramic processing route using CeO2 and PrOx powders in the desired stoichiometry and sintering at 1500°C in air. Synthesized powder has been characterized for phase chemistry and lattice structure. Electrochemical characteristics of the synthesized powder has been examined using electrochemical impedance spectroscopy. The observed increase in the electrical conductivity of PCO are associated with increased concentration of oxygen vacancies created by the replacement of Ce4+ ions with Pr+3 ions. The addition of PrOx also lowered the polarization and ohmic losses.

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Liu, Huan, Rong Zhu, Zhi Ping Zheng, Dong Xiang Zhou e Qiu Yun Fu. "Effect of Ni Electrode on the Characteristics of BaTiO₃ Based PTCR Ceramics". Advanced Materials Research 415-417 (dezembro de 2011): 1000–1004. http://dx.doi.org/10.4028/www.scientific.net/amr.415-417.1000.

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In order to achieve cost-effective inner electrodes for the multilayer BaTiO3-based ceramics having a positive temperature coefficient of resistivity (PTCR), we fabricated Ni paste based on Ni powder and investigated the effect of Ni electrode on the performance of semiconducting BaTiO3 ceramics. We adjusted the particle size of Ni powder (0.2μm, 0.6μm and 1μm) and incorporated them as the electrodes into both single-layer and laminated BaTiO3 PTCR devices. The device samples were sintered at 1200oC for 30min in reducing atmosphere consisting of N2 and H2 (97:3 by volume ratio), and went through a post-sintering in-air heat treatment at 700-900oC in air which is necessary for the PTCR effect. The results indicate that Ni powder with lager particle size are more stable against post-sintering heat treatment, and the heating temperature needs to be optimized to overcome the trade-off between ohmic behaviors of Ni electrodes and the PTCR effect of BaTiO3-based semiconducting ceramics.

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Su, Yan Kuin, Fuh Shyang Juang e Kuang Jou Gan. "Ohmic Contacts of AuGeNi and Ag/AuGeNi to n-GaSb with Various Sintering Temperatures". Japanese Journal of Applied Physics 30, Part 1, No. 5 (15 de maio de 1991): 914–16. http://dx.doi.org/10.1143/jjap.30.914.

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Teses / dissertações sobre o assunto "Ohmic sintering"

Djebbi, Roua. "Contribution à la réalisation par technologies additives hybrides de composants microondes 3D multi-matériaux". Electronic Thesis or Diss., Limoges, 2024. http://www.theses.fr/2024LIMO0110.

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Ces travaux de thèse portent sur l’amélioration des performances de composants microondes 3D multi-matériaux réalisés par des technologies additives hybrides, en s'appuyant sur des techniques de recuit pour optimiser la conductivité électrique de pistes métalliques imprimées, et l’étude de différentes méthodes de caractérisation haute fréquence (HF) pour caractériser ces conducteurs. L'étude bibliographique réalisée a conduit à la sélection de technologies d’impression directe, telles que le jet d’aérosol (AJP) et la micro-extrusion de matière (nScrypt) pour les couches métalliques, ainsi que l’impression 3D de polymère PEKK. L’un des principaux apports de ces travaux réside dans l’intégration de techniques de recuit in situ, comme le recuit laser, directement intégré dans la machine nScrypt, permettant de fritter les dépôts métalliques immédiatement après impression, afin de maximiser leurs propriétés conductrices. Le recuit ohmique a également été exploré comme méthode complémentaire, notamment pour les lignes métalliques imprimées par micro-extrusion, avec des résultats prometteurs pour l'amélioration significative de la conductivité. En parallèle, des méthodes innovantes de caractérisation HF de la conductivité ont été développées. Ces approches reposent sur des sondes spécifiques permettant des caractérisations à la fois sans contact et en contact direct, afin de mesurer la conductivité HF sur des zones réduites et de cartographier la conductivité des surfaces métalliques imprimées en tenant compte de la rugosité de surface. Cette démarche s’inscrit dans un objectif global d'intégration de ces innovations dans un équipement de fabrication additive hybride, optimisant ainsi la performance de composants microondes 3D (lignes de transmission, résonateurs, ...)
This thesis focuses on improving the performance of 3D multi-material microwave components produced through hybrid additive manufacturing technologies, utilizing sintering techniques to optimize the electrical conductivity of printed metallic tracks, and the study of various high-frequency (HF) characterization methods to assess these conductors. The bibliographic study led to the selection of direct printing technologies such as aerosol jet printing (AJP) and material micro-extrusion (nScrypt) for metallic layers, as well as 3D printing of PEKK polymer. One of the main contributions of this work lies in the integration of in situ sintering techniques, such as laser sintering, directly integrated into the nScrypt machine, allowing for the sintering of metallic deposits immediately after printing to maximize their conductive properties. Ohmic sintering was also explored as a complementary method, particularly for metal lines printed via micro-extrusion, with promising results for significantly improving conductivity. In parallel, innovative methods for HF conductivity characterization were developed. These approaches rely on specific probes enabling both contactless and direct contact characterizations, allowing for the measurement of HF conductivity over small areas and the mapping of the conductivity of printed metallic surfaces while accounting for surface roughness. This work is part of a broader goal to integrate these innovations into a hybrid additive manufacturing system, thereby optimizing the performance of 3D microwave components (transmission lines, resonators, etc.)

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Trabalhos de conferências sobre o assunto "Ohmic sintering"

Song, Jung-Hoon, Young-Min Park, Hong-Youl Bae, Jinsoo Ahn, Byeong-Geun Seong, Do-Hyeong Kim e Joong-Hwan Jun. "Effect of Co-Doped GDC Buffer Layer on the Power Density of Solid Oxide Fuel Cell (SOFC)". In ASME 2010 8th International Conference on Fuel Cell Science, Engineering and Technology. ASMEDC, 2010. http://dx.doi.org/10.1115/fuelcell2010-33252.

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It is usually accepted that the doped ceria buffer layer is needed between the conventional yttria-stabilized zirconia (YSZ) electrolytes and the Fe and Co containing cathode materials such as (La,Sr)(Co,Fe)O3-δ (LSCF) to improve the cell performance and to prevent unwanted chemical reactions between them. In this study, the effect of the sintering temperature, cobalt doping amount, and the starting powders of GDC (Gadolinium Doped Ceria) layer were investigated. The cell testing result indicated that it would be desirable to decide the sintering temperature of the GDC layer less than 1250°C to minimize the effect of the solid solutions based on (Zr, Ce)O2. Furthermore, 5 days operations of the button cell with cobalt doped GDC layer showed the increased ohmic and polarization resistance, indicating the cobalt segregation from the GDC layer during the long term operation.

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Vinod, P. N. "Evaluation of the ohmic properties of the silver metal contacts of an improved sintering process on the multicrystalline silicon solar cells". In 2007 International Workshop on Physics of Semiconductor Devices. IEEE, 2007. http://dx.doi.org/10.1109/iwpsd.2007.4472685.

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