Bibliografias temáticas / Negative resistance oscillator

Literatura científica selecionada sobre o tema "Negative resistance oscillator"

Autor: Grafiati
Publicado: 7 de julho de 2024
Última modificação: 7 de julho de 2024

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Artigos de revistas sobre o assunto "Negative resistance oscillator"

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Najafabadi, Neda Kazemy, Sare Nemati e Massoud Dousti. "Design of S-Band Oscillators by Using GaAs ED02AH 0.2-μm Technology". Advanced Materials Research 383-390 (novembro de 2011): 5874–79. http://dx.doi.org/10.4028/www.scientific.net/amr.383-390.5874.

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The S band limits from 2 to 4 GHz, is part of the electromagnetic spectrum’s microwave band. It is used by radars, satellites and some communications. This paper is concerned with the theory and design of 3 GHz feedback type and negative resistance oscillators by using Aiglent ADS software simulator with GaAs ED02AH 0.2-μm technology, and comparison of their results. A lumped element resonator has used in the design of feedback type oscillator and a negative resistance oscillator has utilized a microstrip resonator. The negative resistance oscillator operates at 3.072 GHz with phase noise levels at -99.49 dBc/Hz and -119.6 dBc/Hz at 100KHz and 1 MHz offset frequencies respectively. The phase noise levels of feedback type oscillator are -83.30 dBc/Hz and -103.3 dBc/Hz at 100KHz and 1 MHz offset at oscillation frequency of 3 GHz. Furthermore, we compared the output power of these oscillators and negative resistance oscillator showed 7.124 dBm, and feedback type oscillator presented -10.707dBm.
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Al-Raie, Firas, e Suhad Jasim. "Effect of Load Impedance on the Performance of Microwave Negative Resistance Oscillators". Journal of Al-Rafidain University College For Sciences ( Print ISSN: 1681-6870 ,Online ISSN: 2790-2293 ), n.º 1 (10 de outubro de 2021): 427–57. http://dx.doi.org/10.55562/jrucs.v39i1.221.

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In microwave negative resistance oscillators, the RF transistor presents impedance with a negative real part at either of its input or output ports. According to the conventional theory of microwave negative resistance oscillators, in order to sustain oscillation and optimize the output power of the circuit, the magnitude of the negative real part of the input/output impedance should be maximized. This paper discusses the effect of the circuit’s load impedance on the input negative resistance and other oscillator performance characteristics in common base microwave oscillators. New closed-form relations for the optimum load impedance that maximizes the magnitude of the input negative resistance have been derived analytically in terms of the Z-parameters of the RF transistor. Furthermore, nonlinear CAD simulation is carried out to show the deviation of the large-signal optimum load impedance from its small-signal value. It has been shown also that the optimum load impedance for maximum negative input resistance differs considerably from its value required for maximum output power under large-signal conditions. A 1.8 GHz oscillator circuit has been designed and simulated using a typical SiGe hetero-junction bipolar transistor (HBT) to verify the proposed approach of analysis.
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Lei, Yu, e Jian Feng Ai. "Application of Negative Resistance in the Inductor Feedback Oscillators Based on Multisim". Applied Mechanics and Materials 556-562 (maio de 2014): 1898–901. http://dx.doi.org/10.4028/www.scientific.net/amm.556-562.1898.

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By analyzing three-point oscillator of inductance feedback with the loss resistance of the inductor,we found the loss resistance of the inductor is a major factor in affecting circuit performance. Negative resistance in series with loss resistance can offset the impact of the loss resistance in the circuit. Oscillation circuit Start-up easilier. The quality factor Q increases and the selectivity is better.The oscillation shape closer to the ideal oscillator.
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Kulapong, Worawut, Winai Jaikla, Surapong Siripongdee, Roman Sotner, Peerawut Suwanjan e Amornchai Chaichana. "A New Method to Synthesise the Sinusoidal Oscillator Based on Series Negative Resistance-Capacitance and its Implementation Using a Single Commercial IC, LT1228". Elektronika ir Elektrotechnika 29, n.º 3 (27 de junho de 2023): 26–32. http://dx.doi.org/10.5755/j02.eie.33844.

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An alternative method for synthesising the sinusoidal oscillator based on series negative resistance-capacitance is presented in this paper. The proposed topology is constructed with the series negative resistance-capacitance circuit connected in parallel with a grounded resistor and capacitor. To validate the proposed method, a new grounded series negative resistance-capacitance simulator is also proposed as a subcircuit for synthesising the sinusoidal oscillator. The series negative resistance-capacitance simulator is based on a commercially available integrated circuit (IC), LT1228. The equivalent negative resistance and equivalent negative capacitance can be adjusted electronically using an external DC bias current. The sinusoidal oscillator that is synthesised using the proposed method consists of a single LT1228, two capacitors, and three resistors. The frequency and the condition of the oscillation are orthogonally adjusted. Also, the condition of oscillation is electronically controlled. The amplitude of the sinusoidal waveform is adjustable. In addition, the output voltage node of the proposed oscillator has a low impedance, which allows it to connect to other circuits without using an additional buffer. Both PSPICE simulation and experiment are used to validate the proposed circuits.
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Grebennikov, A. V. "Stability of Negative Resistance Oscillator Circuits". International Journal of Electrical Engineering Education 36, n.º 3 (julho de 1999): 242–54. http://dx.doi.org/10.7227/ijeee.36.3.6.

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Nguyen, Thanh Dat, e Jong-Phil Hong. "A 350-GHz Coupled Stack Oscillator with −0.8 dBm Output Power in 65-nm Bulk CMOS Process". Electronics 9, n.º 8 (28 de julho de 2020): 1214. http://dx.doi.org/10.3390/electronics9081214.

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This paper presents a push-push coupled stack oscillator that achieves a high output power level at terahertz (THz) wave frequency. The proposed stack oscillator core adopts a frequency selective negative resistance topology to improve negative transconductance at the fundamental frequency and a transformer connected between gate and drain terminals of cross pair transistors to minimize the power loss at the second harmonic frequency. Next, the phases and the oscillation frequencies between the oscillator cores are locked by employing an inductor of frequency selective negative resistance topology. The proposed topology was implemented in a 65-nm bulk CMOS technology. The highest measured output power is −0.8 dBm at 353.2 GHz while dissipating 205 mW from a 2.8 V supply voltage.
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zhao, Zhu, Guo, Cong, Tee, Song e Zheng. "Resonant Tunneling Diode (RTD) Terahertz Active Transmission Line Oscillator with Graphene-Plasma Wave and Two Graphene Antennas". Electronics 8, n.º 10 (14 de outubro de 2019): 1164. http://dx.doi.org/10.3390/electronics8101164.

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This study describes the design of a resonant tunneling diode (RTD) oscillator (RTD oscillator) with a RTD-gated-graphene-2DEF (two dimensional electron fluid) and demonstrates the functioning of this RTD oscillator through a transmission line simulation model. Impedance of the RTD oscillator changes periodically when physical dimension of the device is of considerable fraction of the electrical wavelength. As long as impedance matching is achieved, the oscillation frequency is not limited by the size of the device. An RTD oscillator with a graphene film and negative differential resistance (NDR) will produce power amplification. The positive electrode of the DC power supply is modified and designed as an antenna. So, the reflected power can also be radiated to increase RTD oscillator output power. The output analysis shows that through the optimization of the antenna structure, it is possible to increase the RTD oscillator output to 22 mW at 1.9 THz and 20 mW at 6.1 THz respectively. Furthermore, the RTD oscillator has the potential to oscillate at 50 THz with a matching antenna.
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Nguyen, Park e Hong. "A Millimeter-Wave Fundamental Frequency CMOS-Based Oscillator with High Output Power". Electronics 8, n.º 11 (27 de outubro de 2019): 1228. http://dx.doi.org/10.3390/electronics8111228.

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The millimeter-wave imaging approach is a promising candidate to satisfy the unmet needs of real-time biomedical imaging, such as resolution, focal area, and cost. As a part of the endeavor to make millimeter-wave imaging more feasible, this paper presents a CMOS oscillator generating a high output power at the millimeter-wave frequency range, with a high fundamental oscillation frequency. The proposed oscillator adopts a frequency-selective negative resistance topology to improve the negative transconductance and to increase the fundamental frequency of oscillation. The proposed oscillator was implemented in a 65 nm bulk CMOS process. The measured highest output power is –2.2 dBm at 190 GHz while dissipating 100 mW from a 2.8 V supply voltage.
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Suh, Inwon, Patrick Roblin e Youngseo Ko. "1/f Additive Phase Noise Analysis for One-Port Injection-Locked Oscillators". Electronics 12, n.º 2 (4 de janeiro de 2023): 264. http://dx.doi.org/10.3390/electronics12020264.

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The 1/f additive phase noise of one-port injection-locked oscillators is experimentally characterized and analyzed using a simple analytic model based on the generalized 1/f Kurokawa theory. To experimentally verify the prediction of the simple analytic model proposed, two negative-conductance transmission line pHEMT oscillators operating at 2.4828 GHz and 2.485 GHz were designed and fabricated. A new configuration for integrating an additive phase noise measurement system with a large signal network analyzer (LSNA) is introduced to jointly acquire both the noise and RF waveforms of the one-port injection-locked oscillator. The Kurokawa derivatives needed for the analytic expression were experimentally obtained using the LSNA measurements and optimized to accurately model the corner frequency. A good agreement between the predicted and experimental results was obtained for both the injection-locked and free-running oscillators. In contrast to phase noise measurements of the free-running oscillator, which can only characterize the oscillator-upconverted 1/f3 noise, the additive phase noise characterization of the injection-locked oscillator is shown to provide the means to directly observe and characterize the input-referred intrinsic 1/f noise source of the oscillator negative resistance.
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Ulansky, Vladimir, Ahmed Raza e Denys Milke. "Two-Terminal Electronic Circuits with Controllable Linear NDR Region and Their Applications". Applied Sciences 11, n.º 21 (20 de outubro de 2021): 9815. http://dx.doi.org/10.3390/app11219815.

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Negative differential resistance (NDR) is inherent in many electronic devices, in which, over a specific voltage range, the current decreases with increasing voltage. Semiconductor structures with NDR have several unique properties that stimulate the search for technological and circuitry solutions in developing new semiconductor devices and circuits experiencing NDR features. This study considers two-terminal NDR electronic circuits based on multiple-output current mirrors, such as cascode, Wilson, and improved Wilson, combined with a field-effect transistor. The undoubted advantages of the proposed electronic circuits are the linearity of the current-voltage characteristics in the NDR region and the ability to regulate the value of negative resistance by changing the number of mirrored current sources. We derive equations for each proposed circuit to calculate the NDR region’s total current and differential resistance. We consider applications of NDR circuits for designing microwave single frequency oscillators and voltage-controlled oscillators. The problem of choosing the optimal oscillator topology is examined. We show that the designed oscillators based on NDR circuits with Wilson and improved Wilson multiple-output current mirrors have high efficiency and extremely low phase noise. For a single frequency oscillator consuming 33.9 mW, the phase noise is −154.6 dBc/Hz at a 100 kHz offset from a 1.310 GHz carrier. The resulting figure of merit is −221.6 dBc/Hz. The implemented oscillator prototype confirms the theoretical achievements.
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Teses / dissertações sobre o assunto "Negative resistance oscillator"

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Narayanaswamy, Anand Subramanian. "A Non-Contact Sensor Interface for High-Temperature, MEMS Capacitive Sensors". Case Western Reserve University School of Graduate Studies / OhioLINK, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=case1275675071.

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Mao, Yuqing. "Nouvelle génération de générateurs de fréquence par auto-calibration de la grille arrière des transistors en technologie FDSOI". Electronic Thesis or Diss., Université Côte d'Azur, 2023. http://www.theses.fr/2023COAZ4123.

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Les systèmes modernes de communication de données s'appuient fortement sur des techniques de transmission synchrone pour optimiser la largeur de bande et minimiser la consommation d'énergie. Dans ces systèmes, seul le signal de données est transmis, ce qui nécessite la mise en œuvre de circuits de récupération d'horloge et de données (CDR) au niveau du récepteur. Cette thèse explore la nouvelle application de la technologie Fully-Depleted Silicon-On-Insulator (FDSOI) 28 nm pour améliorer les performances des circuits CDR en atténuant les effets de canaux courts grâce à des structures de transistors innovantes.L'une des contributions de cette thèse est le développement d'un circuit à résistance négative utilisant la grille arrière du transistor FDSOI. Ce circuit utilise un miroir de courant contrôlé par la grille arrière pour créer un oscillateur LC à résistance négative. En parallèle, ce travail présente l'implémentation de deux types d'oscillateurs : un oscillateur en anneau complémentaire et un oscillateur en anneau rapide. L'oscillateur en anneau complémentaire capitalise sur les inverseurs complémentaires, offrant un retour de biais automatique par le contrôle de la grille arrière, améliorant ainsi ses performances. L'oscillateur en anneau rapide utilise quant à lui des inverseurs rapides en combinaison avec des inverseurs complémentaires conçus pour minimiser les délais de propagation. La thèse présente une analyse comparative détaillée de ces oscillateurs, mettant en évidence leurs points forts et leurs limites. En outre, nous introduisons un signal d'injection dans l'oscillateur en anneau, ce qui permet de créer un oscillateur verrouillé par injection (ILO) à faible jitter. Cet oscillateur présente des caractéristiques de performance remarquables, notamment en ce qui concerne la réduction du bruit de phase et l'amélioration de la stabilité de la fréquence. Tirant parti des bonnes performances de l'ILO, nous proposons une nouvelle récupération d'horloge et de données verrouillée par injection (ILCDR) à faible coût et à faible consommation d'énergie, avec un temps de verrouillage rapide et une bonne jitter pour les applications en mode burst.Pour valider les conceptions proposées et leurs performances à différentes fréquences opérationnelles, des simulations approfondies ont été réalisées à l'aide de Cadence Virtuoso à 868 MHz et 2.4 GHz. En outre, la conception de layout et la simulation post layout de l'ILCDR basé sur l'oscillateur en anneau complémentaire sont également étudiées
Modern data communication systems heavily rely on synchronous transmission techniques to optimize bandwidth and minimize power consumption. In such systems, only the data signal is transmitted, necessitating the implementation of Clock and Data Recovery (CDR) circuits at the receiver end. This thesis explores the novel application of Fully-Depleted Silicon-On-Insulator (FDSOI) 28nm technology to enhance the performance of CDR circuits by mitigating short-channel effects through innovative transistor structures.One contribution of this thesis is the development of a negative resistance circuit using the back gate of the FDSOI transistor. This circuit employs a current mirror controlled by the back gate to create a negative resistance LC oscillator. In parallel, this work presents the implementation of two types of oscillators: a complementary ring oscillator and a fast ring oscillator. The complementary ring oscillator capitalizes on complementary inverters, offering automatic bias feedback by the back gate control, thereby enhancing its performance. Meanwhile, the fast ring oscillator uses fast inverters in combination with complementary inverters designed to minimize propagation delays. The thesis presents a detailed comparative analysis of these oscillators, highlighting their individual strengths and limitations. Furthermore, we introduce an injection signal into the ring oscillator, resulting in the creation of a low-jitter Injection-Locked Oscillator (ILO). This ILO exhibits remarkable performance characteristics, particularly in reducing phase noise and enhancing frequency stability. Taking advantage of the good performance of the ILO, we propose a novel low-cost and low-power Injection-Locked Clock and Data Recovery (ILCDR) with a fast-locking time and good jitter for burst-mode applications.To validate the proposed designs and their performance at different operational frequencies, extensive simulations have been carried out using Cadence Virtuoso at 868 MHz and 2.4 GHz. In addition, the layout design and post layout simulation of the ILCDR based on the complementary ring oscillator are also studied
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Littlejohn, Samuel David. "Electrical properties of graphite nanoparticles in silicone : flexible oscillators and electromechanical sensing". Thesis, University of Bath, 2013. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.600642.

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This thesis reports the discovery of a wide negative di↵erential resistance (NDR) region in a graphite-silicone composite that was utilized to create a strain-tuned flexible oscillator. Encoding the strain into frequency mimics the behavior of mechanoreceptor neurons in the skin and demonstrates a flexible and electronically active material suitable for state of the art bio-electronic applications. The NDR was investigated over a range of composite filling fractions and temperatures; alongside theoretical modelling to calculate the tunneling current through a graphite-silicone barrier. This led to the understanding that the NDR is the result of a semi-metal to insulator transition of embedded graphene bilayers within the graphite nanoparticles. The transition, brought about by a transverse bias across specifically orientated particles, opens a partial band-gap at the Fermi level of the bilayer. NDR in a flexible material has not been observed before and has potential for creating a flexible active device. The electromechanical properties of the composite were considered through a bend induced bilayer strain. The piezoresistance was found to be dominated by transient resistance spiking from the breaking of conduction lines, which then reform according to the viscoelasticity of the polymer matrix. The resistance spiking was embraced as a novel method for sensitive di↵erential pressure detection, used in the development of two applications. Firstly, it was employed for the detection of ultrasound waves and found to have an acoustic pressure detection threshold as low as 48 Pa. A commensurability was observed between the composite width and ultrasound wavelength which was shown to be consistent with the formation of standing waves, described by Bragg’s law. Secondly, a differential pressure array of 64 composite pixels was fabricated and demonstrated to image pressures under 3.8 kPa at a resolution of 10 dpi. The NDR active region was incorporated into an LC circuit where it was demonstrated to sustain oscillations of up to 12.5 kHz. The composite was then strained and an intrinsic frequency was observed which had a linear dependence on the strain with a frequency shift of 84 Hz / % strain. Lastly the composite was used in a strain-tuned amplifier circuit and shown to provide a gain of up to 4.5. This thesis provided the groundwork for a completely flexible electronically active device for futuristic bio-electronic skins with resolutions and sensitivities rivalling those of human tactile sensing.
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Chandrasekhar, Nambiar Shyam. "Design of a Wireless Power Transfer System using Electrically Coupled Loop Antennas". Thesis, Virginia Tech, 2015. http://hdl.handle.net/10919/54003.

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Wireless Power Transfer (WPT) has become quite popular over the recent years. This thesis presents some design challenges while developing a WPT system and describes a system-level methodology for designing an end-to-end system. A critical analysis of contemporary research is performed in the form of a literature survey of both academic and commercial research to understand their benefits and demerits. Some theoretical notes are presented on coupled-mode theory and coupled filter theory and the problems concerning WPT analyzed using these models. The need for higher power transfer efficiency (PTE) and power delivered to load (PDL) is studied using these models. The case for using magnetic antennas over electric antennas when surrounded by lossy media (specifically for the case of human body tissues at various frequencies) is made using some theoretical models and simulation results. An Electrically Coupled Loop Antenna (ECLA) is introduced, studied and designed for two main WPT applications, viz. free space transmission and that of powering implanted devices. An equivalent circuit is proposed to better understand the coupling effects of the antennas on a circuit level and to study the effect of various environmental and structural factors on the coupling coefficient. Some prototypes were created and measured for the two use cases of free space and implanted applications. In order to complete the system design, a negative resistance-based oscillator is designed and fabricated, that incorporates the antennas as a load and oscillates at the required frequency. Some changes in load conditions and power handling are studied by the use of two circuits for free-space (high-power) and implanted (low-power) applications. Finally, the salient points of the thesis are re-iterated and some future work outlined in the concluding chapter.
Master of Science
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WAN, LIANG-FANG, e 萬良芳. "Room Temperature Negative Differential Resistance Based Radio Frequency Oscillator Diode on Porous Silicon". Thesis, 2017. http://ndltd.ncl.edu.tw/handle/9x8raq.

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Lin, Yan-Chin, e 林晏慶. "Study on a Low Power Voltage Controlled SAW Oscillator and its Negative Resistance Analysis". Thesis, 2006. http://ndltd.ncl.edu.tw/handle/40628466791456035684.

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碩士
國立交通大學
電信工程系所
95
In this thesis, a low-power consumption voltage control SAW oscillator available for high frequency is proposed, which is developed based on a Pierce oscillator, and uses three-cascaded gain stage instead of a single one. It uses a single huge resistance for DC bias, and is provided with DC coupling function, which improves the area and power consumption problem caused by capacitor coupling. A small resistance is used for phase adjustment, which is capable to improve the negative resistance limit for certain frequency. The transconductance of the circuit is relatively tunable under this phase adjustment mechanism, which helps to achieve the goal of low power consumption. The circuit is implemented by TSMC 0.35μm 2P4M CMOS process, the output frequency is 622.6MHz, the magnitude of the fundamental tone is -33.19dBm, and the power consumption of the core circuit is 18.93Mw. At last we compare the simulation and the measurement result, and discuss the possible oscillation caused the parasitics.
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Li, Shuai. "Threshold Switching and Self-Oscillation in Niobium Oxide". Phd thesis, 2018. http://hdl.handle.net/1885/144181.

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Volatile threshold switching, or current controlled negative differential resistance (CC-NDR), has been observed in a range of transition metal oxides. Threshold switching devices exhibit a large non-linear change in electrical conductivity, switching from an insulating to a metallic state under external stimuli. Compact, scalable and low power threshold switching devices are of significant interest for use in existing and emerging technologies, including as a selector element in high-density memory arrays and as solid-state oscillators for hardware-based neuromorphic computing. This thesis explores the threshold switching in amorphous NbOx and the properties of individual and coupled oscillators based on this response. The study begins with an investigation of threshold switching in Pt/NbOx/TiN devices as a function device area, NbOx film thickness and temperature, which provides important insight into the structure of the self-assembled switching region. The devices exhibit combined threshold-memory behaviour after an initial voltage-controlled forming process, but exhibit symmetric threshold switching when the RESET and SET currents are kept below a critical value. In this mode, the threshold and hold voltages are shown to be independent of the device area and film thickness, and the threshold power, while independent of device area, is shown to decrease with increasing film thickness. These results are shown to be consistent with a structure in which the threshold switching volume is confined, both laterally and vertically, to the region between the residual memory filament and the electrode, and where the memory filament has a core-shell structure comprising a metallic core and a semiconducting shell. The veracity of this structure is demonstrated by comparing experimental results with the predictions of a resistor network model, and detailed finite element simulations. The next study focuses on electrical self-oscillation of an NbOx threshold switching device incorporated into a Pearson-Anson circuit configuration. Measurements confirm stable operation of the oscillator at source voltages as low as 1.06 V, and demonstrate frequency control in the range from 2.5 to 20.5 MHz with maximum frequency tuning range of 18 MHz/V. The oscillator exhibit three distinct oscillation regimes: sporadic spiking, stable oscillation and damped oscillation. The oscillation frequency, peak-to-peak amplitude and frequency are shown to be temperature and voltage dependent with stable oscillation achieved for temperatures up to ∼380 K. A physics-based threshold switching model with inclusion of device and circuit parameters is shown to explain the oscillation waveform and characteristic. The final study explores the oscillation dynamics of capacitively coupled Nb/Nb2O5 relaxation oscillators. The coupled system exhibits rich collective behaviour, from weak coupling to synchronisation, depending on the negative differential resistance response of the individual devices, the operating voltage and the coupling capacitance. These coupled oscillators are shown to exhibit stable frequency and phase locking states at source voltages as low as 2.2 V with MHz frequency tunable range. The numerical simulation of the coupled system highlights the role of source voltage, and circuit and device capacitance in controlling the coupling modes and dynamics.
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Abraham, Nithin. "Van der Waals Heterojunctions for Emerging Device Applications". Thesis, 2022. https://etd.iisc.ac.in/handle/2005/6049.

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Low-dimensional systems are an exciting platform for exploring new physics and realizing novel devices. The intriguing features, such as the existence of strongly bound multiparticle complexes and thickness-dependent band structures, enable us to utilize them to overcome many challenges faced by bulk materials and conceive new technologies. Since the isolation of graphene, the class of two-dimensional materials has grown tremendously. The array of materials one can choose from for implementing an idea is vast. Nevertheless, understanding the underlying physics is essential for utilizing these properties for real-life applications. Here, we explore the optical, electrical, and optoelectrical characteristics of heterostructures based on 2D layered systems. The strongly bound excitonic complexes hosted by monolayer transition metal dichalcogenide semiconductors (TMDC) are an excellent platform for probing many-body physics. The strong luminescence and a plethora of exciting properties make them a good candidate for applications such as single photon emitters and light-emitting diodes. In the first work, we explore new ways to tune the emission from these particles without compromising their luminescence. Using a high-quality graphene/hBN/WS2/hBN/Au vertical heterojunction, we demonstrate for the first time an out-of-plane electric field-driven change in the sign of the Stark shift from blue to red for four different excitonic species, namely, the neutral exciton, the charged exciton (trion), the charged biexciton, and the defect-bound exciton. We also find that the encapsulating environment of the monolayer TMDC plays a vital role in wave function spreading and hence in determining the magnitude of the blue Stark shift. We also provide a theoretical framework to understand the underlying physics better. The findings have important implications in probing many-body interaction in the two dimensions and developing layered semiconductor-based tunable optoelectronic devices. A significant advantage of the 2D material system is its robustness against lattice mismatch between the successive layers and the ability to extract exciting characteristics from the resultant system. The final system's behavior greatly depends on how the energy bands of the individual materials line up and can result in drastically different properties. In the second work, we demonstrate how an additional ultra-thin barrier layer modifies the properties of a black phosphorus (BP)/SnSe2 tunnel diode. While the system without the barrier layer showed a linear relationship between current and voltage, the additional barrier layer modified it to a highly nonlinear relation and exhibited negative differential resistance (NDR). Moreover, the tunnel diodes exhibited highly repeatable, ultra-clean, and gate tunable NDR characteristics with a signature of intrinsic oscillation and a large peak-to-valley current ratio (PVCR) of 3.6 at 300 K (4.6 at 7 K), making them suitable for practical applications. We then show that the thermodynamic stability of the van der Waals (vdW) tunnel diode circuit can be tuned from astability to bistability by altering the constraint by choosing a voltage or a current bias, respectively. After exploring the dynamics of the device, we assess its viability for designing systems with real-life applications. In the astable mode under voltage bias, we demonstrate a compact, voltage-controlled oscillator without needing an external tank circuit. In the bistable mode under current bias, we demonstrate a highly scalable, single element, a one-bit memory cell promising for dense random access memory applications in memory-intensive computation architectures. In the third work, we explore the usage of vdW materials for generating a cryptographically secure true random number generator. Such generators rely on external entropy sources for their indeterminism. Physical processes governed by the laws of quantum mechanics are excellent sources of entropy available in nature. However, extracting enough entropy from such systems for generating truly random sequences is challenging while maintaining the feasibility of the extraction procedure for real-world applications. Here, we design a compact and an all-electronic vdW heterostructure-based device capable of detecting discrete charge fluctuations for extracting entropy from physical processes and use it for the generation of independent and identically distributed (IID) true random sequences. Using the proposed scheme, we extract a record high value (> 0.98 bits/bit) of min-entropy. We demonstrate an entropy generation rate tunable over multiple orders of magnitude and show the persistence of the underlying physical process for temperatures ranging from cryogenic to ambient conditions. We verify the random nature of the generated sequences using tests such as the NIST SP 800-90B standard and other statistical measures and verify the suitability of our random sequence for cryptographic applications using the NIST SP 800-22 standard. The generated random sequences are then used to implement various randomized algorithms in real life without preconditioning steps. We then investigate how knowledge of the dynamics of optically generated carriers, ability to sense discrete charge fluctuation, and transport of carriers across vdW heterostructure can be combined to design a comprehensive system to detect single photons. Single-photon detectors (SPDs) are crucial in applications ranging from space and biological imaging to quantum communication and information processing. The SPDs operating at room temperature are particularly interesting to broader application spaces as the energy overhead introduced by cryogenic cooling can be avoided. Although silicon-based single photon avalanche diodes (SPADs) are well matured and operate at room temperature, the bandgap limitation restricts their operation at telecommunication wavelength (1550 nm) and beyond. On the other hand, InGaAs-based SPADs are sensitive to 1550 nm photons but suffer from relatively lower efficiency, high dark count rate, afterpulsing probability, and pose hazards to the environment from the fabrication process. By coupling a low bandgap (~350 meV) absorber (black phosphorus) to a sensitive van der Waals probe capable of detecting discrete electron fluctuation, we demonstrate a room-temperature single-photon detector. While the device is capable of covering up to a wavelength of ~3.5 um, we optimize the device for operation at 1550 nm and demonstrate an overall quantum efficiency of 21.4% (estimated as 42.8% for polarized light) and a minimum dark count of ~720 Hz at room temperature.
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Capítulos de livros sobre o assunto "Negative resistance oscillator"

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Hiramoto, Masahiro. "Multiplied Photocurrent Oscillation with Negative Resistance". In Electronic Materials: Science & Technology, 143–61. Singapore: Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-1237-7_9.

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Schöll, Eckehard. "Theory of Oscillatory Instabilities in Parallel and Perpendicular Transport in Heterostructures". In Negative Differential Resistance and Instabilities in 2-D Semiconductors, 37–51. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-2822-7_3.

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Wang, J. N., C. Y. Li, X. R. Wang, B. Q. Sun, Y. Q. Wang, W. K. Ge, D. S. Jiang e Y. P. Zeng. "Negative differential resistance and current self-oscillation in doped GaAs/AlAs superlattices". In Springer Proceedings in Physics, 837–38. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_397.

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Nahin, Paul J. "First Continuous Waves, Negative Resistance Oscillators and the Van der Pol Equation, and the Heterodyne Concept". In The Science of Radio, 75–101. New York, NY: Springer New York, 2001. http://dx.doi.org/10.1007/978-1-4613-0173-8_7.

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Semenov, Andriy, Olena Semenova, Oleksandr Osadchuk, Iaroslav Osadchuk, Serhii Baraban, Andrii Rudyk, Andrii Safonyk e Oleksandr Voznyak. "Van der Pol Oscillators Based on Transistor Structures with Negative Differential Resistance for Infocommunication System Facilities". In Data-Centric Business and Applications, 43–78. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-71892-3_3.

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"1.3 Van der Pol’s Negative Resistance Oscillator Equation". In The Mathematical Radio, 24–32. Princeton University Press, 2024. http://dx.doi.org/10.1515/9780691235325-006.

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Le, C. A., R. L. Batdorf, W. Wiegmann e G. Kaminsky. "THE READ DIODE - AN AVALANCHING, TRANSIT-TIME, NEGATIVE-RESISTANCE OSCILLATOR". In Semiconductor Devices: Pioneering Papers, 786–88. WORLD SCIENTIFIC, 1991. http://dx.doi.org/10.1142/9789814503464_0099.

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Ahmad, Shadab. "OVERVIEW OF OPERATIONAL TRANSCONDUCTANCE AMPLIFIER (OTA)". In Futuristic Trends in Network & Communication Technologies Volume 2 Book 19, 151–58. Iterative International Publishers, Selfypage Developers Pvt Ltd, 2023. http://dx.doi.org/10.58532/v2bs19p2ch5.

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Resumo:
An essential component of electronic systems is the operational transconductance amplifier (OTA). A transconductor's job is to turn an input voltage into an output current. The transconductance amplifier can be set up to either amplify or combine currents or voltages. An OTA can be used in many electronic systems, such as oscillators, filters, and analog to digital converters, due to its versatility. An operational amplifier also uses an OTA as its core amplifier. Numerous analog systems are dependent on the OTA. In linear applications, OTAs are also more frequently utilized in openloop configurations devoid of negative feedback. This is because the high resistance at the output, which controls the voltage at the output and can be specifically set to prevent the OTA from reaching saturation even at relatively high differential input voltages, prevents the OTA from reaching saturation
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Trabalhos de conferências sobre o assunto "Negative resistance oscillator"

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Chi, Baoyong, Xiaolei Zhu, Ziqiang Wang e Zhihua Wang. "Quadrature Oscillator with Negative-Resistance Compensated Transformer Couple". In 2005 IEEE Asian Solid-State Circuits Conference. IEEE, 2005. http://dx.doi.org/10.1109/asscc.2005.251760.

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Worapishet, Apisak, Ittipat Roopkom e Phanumas Khumsat. "A Top-Biased Mutual Negative Resistance LC Oscillator Technique". In 2007 Asia-Pacific Microwave Conference - (APMC 2007). IEEE, 2007. http://dx.doi.org/10.1109/apmc.2007.4554734.

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Ulansky, V. V., e Sali F. Ben Suleiman. "Negative differential resistance based voltage-controlled oscillator for VHF band". In 2013 IEEE XXXIII International Scientific Conference on Electronics and Nanotechnology (ELNANO 2013). IEEE, 2013. http://dx.doi.org/10.1109/elnano.2013.6552016.

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Qi-guo, Yao. "Numerical Value Calculation and Analysis of Negative Resistance Oscillator Circuit". In 2011 International Conference on Intelligent Computation Technology and Automation (ICICTA). IEEE, 2011. http://dx.doi.org/10.1109/icicta.2011.441.

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Cojan, Nicolae, Arcadie Cracan e Radu Cojan. "A balanced differential CMOS oscillator with simulated inductor and negative resistance". In 2010 IEEE Region 8 International Conference on "Computational Technologies in Electrical and Electronics Engineering" (SIBIRCON 2010). IEEE, 2010. http://dx.doi.org/10.1109/sibircon.2010.5555009.

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Chuanwu, Tan, e Gong Jiang Tao. "The Design and Implementation of an Oscillator Chip with Negative Resistance". In 2021 International Conference on Intelligent Transportation, Big Data & Smart City (ICITBS). IEEE, 2021. http://dx.doi.org/10.1109/icitbs53129.2021.00091.

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Olokede, Seyi S., Chuckwuemeka J. Okonkwo, Clement A. Adamariko, Oladimeji O. Oniyide e Mohd F. Ain. "A 10 GHz Oscillator Based on the Principle of Negative Resistance". In 2018 Progress in Electromagnetics Research Symposium (PIERS-Toyama). IEEE, 2018. http://dx.doi.org/10.23919/piers.2018.8597753.

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Mohammed, Falah, Allam Mousa, Ahmed Masri e Y. A. S. Dama. "Negative Resistance Feedback Oscillator Design for Internet Over TV (IOTV) Application". In 2019 International Conference on Promising Electronic Technologies (ICPET). IEEE, 2019. http://dx.doi.org/10.1109/icpet.2019.00028.

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Catli, Burak, e Mona M. Hella. "A low-power dual-band oscillator based on band-limited negative resistance". In 2009 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). IEEE, 2009. http://dx.doi.org/10.1109/rfic.2009.5135533.

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Karacaoglu, U., N. S. Aujla, I. D. Robertson e J. Watkins. "An active patch antenna topology based on negative resistance FET oscillator design". In 23rd European Microwave Conference, 1993. IEEE, 1993. http://dx.doi.org/10.1109/euma.1993.336750.

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