Literatura científica selecionada sobre o tema "Nanofils III-As"
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Artigos de revistas sobre o assunto "Nanofils III-As"
Taniguchi, Yuma, Taro Kato, Yusuke Hamanaka, Takahisa Tanaka e Ken Uchida. "Experimental and Simulation Studies of Acetone Detection By Pt-Au Nanofilm Sensors". ECS Meeting Abstracts MA2023-02, n.º 62 (22 de dezembro de 2023): 2921. http://dx.doi.org/10.1149/ma2023-02622921mtgabs.
Texto completo da fonteRizzo, L., C. S. Uyguner, H. Selcuk, M. Bekbolet e M. Anderson. "Activation of solgel titanium nanofilm by UV illumination for NOM removal". Water Science and Technology 55, n.º 12 (1 de junho de 2007): 113–18. http://dx.doi.org/10.2166/wst.2007.395.
Texto completo da fonteDemirci, M., S. Tuncer, HS Sancaklı, N. Tekçe e C. Baydemir. "Clinical Performance of Different Solvent-based Dentin Adhesives With Nanofill or Nanohybrid Composites in Class III Restorations: Five Year Results". Operative Dentistry 42, n.º 4 (1 de julho de 2017): E111—E120. http://dx.doi.org/10.2341/16-326-c.
Texto completo da fonteJiao, Yan, Yamiao Wang, Min Li, Ying Liu, Ping Mao e Yi Yang. "Visible Light Excited Catalysis and Reusability Performances of TiO2@Pr:Y2SiO5 Upconversion Materials". Journal of Nanomaterials 2017 (2017): 1–8. http://dx.doi.org/10.1155/2017/9163914.
Texto completo da fontePitruzzella, Rosalba, Riccardo Rovida, Chiara Perri, Alessandro Chiodi, Francesco Arcadio, Nunzio Cennamo, Laura Pasquardini et al. "Polymer Doping as a Novel Approach to Improve the Performance of Plasmonic Plastic Optical Fibers Sensors". Sensors 23, n.º 12 (13 de junho de 2023): 5548. http://dx.doi.org/10.3390/s23125548.
Texto completo da fonteZhang, Hong, Zac Rush, Zoe Penn, Kami Dunn, Sydney Asmus, Carolyn Cooke, Zach Cord, Shawna Coulter e Chance Morris. "Films Floating on Water Surface: Coupled Redox Cycling of Iron Species (Fe(III)/Fe(II)) at Soil/Water and Water/Air Interfaces". Water 16, n.º 9 (2 de maio de 2024): 1298. http://dx.doi.org/10.3390/w16091298.
Texto completo da fontePantle, Florian, Monika Karlinger, Simon Wörle, Fabian Becker, Theresa Höldrich, Elise Sirotti, Max Kraut e Martin Stutzmann. "Crystal side facet-tuning of GaN nanowires and nanofins grown by molecular beam epitaxy". Journal of Applied Physics 132, n.º 18 (14 de novembro de 2022): 184304. http://dx.doi.org/10.1063/5.0098016.
Texto completo da fonteKrywko-Cendrowska, A. "Voltammetric Tracing of Al(III) Using Supramolecular Metal-Polyphenolic Nanofilms Obtained via Electrochemically Assisted Self-Assembly". CHIMIA International Journal for Chemistry 74, n.º 4 (29 de abril de 2020): 289–92. http://dx.doi.org/10.2533/chimia.2020.289.
Texto completo da fonteZinovyev, E. V., V. N. Tsygan, M. S. Asadulayev, O. V. Borisov, I. M. Lopatin, S. A. Lukyanov, I. V. Artsimovich et al. "Possibilities of use of arc-type discharge low-temperature air plasma of atmospheric pressure for burn wound treatment". Bulletin of the Russian Military Medical Academy 20, n.º 2 (15 de dezembro de 2018): 171–76. http://dx.doi.org/10.17816/brmma12315.
Texto completo da fonteCasuse-Driovínto, Tybur Q., Angelica Benavidez, John Bryan Plumley, Lok-kun Tsui, Abdulmehdi Ali, Jose Manuel Cerrato e Fernando Garzon. "DC Sputtered Ultralow Loading Gold Nanofilm Electrodes for Detection of As (III) in Water". ECS Sensors Plus, 6 de maio de 2022. http://dx.doi.org/10.1149/2754-2726/ac6d67.
Texto completo da fonteTeses / dissertações sobre o assunto "Nanofils III-As"
Chereau, Emmanuel. "Synthèse et modélisation de nanofils III-As par SAG-HVPE : vers des dispositifs pour l'infrarouge et la conversion d'énergie". Electronic Thesis or Diss., Université Clermont Auvergne (2021-...), 2024. http://www.theses.fr/2024UCFA0020.
Texto completo da fonteThis work focuses on the selective area growth (SAG) of III-As nanowires (NWs) by hydride vapor-phase epitaxy (HVPE). First, we have studied the SAG of GaAs NWs on GaAs substrates. Systematic studies according to growth conditions have demonstrated a growth suppression effect under arsenic-rich atmosphere. These observations were supported by a kinetic model which, for the first time in HVPE, takes into account the diffusion of Ga adatoms on the NWs side facets. Then, a preliminary study of the doping of NWs was carried out, as well as the growth of p-i-n junctions in NWs. The results are encouraging regarding the fabrication of NW-based devices by HVPE. Secondly, we have studied the SAG of InAs and InGaAs on GaAs and Si substrates. It turned out that growth suppression also occurs for InAs NWs. As for InGaAs, NW arrays with various compositions have been successfully obtained. A growth model was developed revealing that the NWs composition is controlled by growth kinetics rather than thermodynamic factors. This greatly simplifies the control of the composition across a wide range of HVPE parameters. These results show the capability of HVPE for the fabrication of homogeneous InGaAs NW arrays with widely tunable compositions