Literatura científica selecionada sobre o tema "Nanoélectronique – Matériaux"
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Teses / dissertações sobre o assunto "Nanoélectronique – Matériaux"
Rafhay, Quentin. "Modélisation des MOSFET nanométrique de type n aux matériaux de canal alternatifs dans le régime totalement ou quasi balistique". Grenoble INPG, 2008. http://www.theses.fr/2008INPG0167.
Texto completo da fonteMOSFET scaling, building block of integrated circuits, do not allow to improve significantly the device performance anymore. One presently studied solution consists in substituting silicon for high mobility semiconductors (Ge or III-Vs) as channel material. Based on original analytical models, calibrated on advanced simulations (quantum, Monte Carlo), this thesis demonstrate that at nanometric scale, the performances expected from this new technologies are in fact lower than the one of conventional silicon devices. Quantum effects (confinement, tunnelling leakage) have been indeed found to be more penalizing in the case of alternative channel material transistors
Nayak, Goutham. "Amélioration des propriétés physiques de matériaux de basse-dimensionnalité par couplage dans des hétérostructures Van der Waals". Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAY084/document.
Texto completo da fonteThe extraordinary intrinsic properties of low dimensional materials depend highly on the environment they are subjected to. Hence they need to be prepared, processed and characterized without defects. In this thesis, I discuss about how to control the environment of low dimensional nanomaterials such as graphene, MoS2 and carbon nanotubes to preserve their intrinsic physical properties. Novel solutions for property enhancements are discussed in depth. In the first part, we fabricate state-of-the-art, edge-contacted, graphene Van der Waals(VdW) heterostructuredevices encapsulated in hexagonal-boron nitride(hBN), to obtain ballistic transport. We use a technique based on 1/f-noise measurements to probe bulk and edge transport during integer and fractional Quantum Hall regimes. In the second part, the same fabrication concept of VdW heterostructures has been extended to encapsulate monolayer MoS2 in hBN to improve optical properties. In this regard we present an extensive study about the origin and characterization of intrinsic and extrinsic defects and their affect on optical properties. Further, we describe a technique to probe the interlayer coupling along with the generation of light with spatialresolution below the diffraction limit of light. Finally, we discuss a natural systemic process to enhance the mechanical properties of natural polymer silk using HipCO-made single walled carbon nanotubes as a food for silkworm
Dutta, Tapas. "Modélisation et simulation des composants MOSFETs à matériaux de canal alternatifs". Thesis, Grenoble, 2014. http://www.theses.fr/2014GRENT122.
Texto completo da fonteAs silicon CMOS technology is approaching fundamental scaling roadblocks, alternative channel materials like Ge and III-V based devices have attracted a lot of attention and have been the subject of active research during the last 10 years. While these new materials have very promising transport properties, studies have shown that they have worse short channel performance than the Si counterparts. Hence there is a strong need to evaluate the impact of change in the channel material on the device performance in terms of the short channel effects. In this work, first some issues with conventional modeling of double gate MOSFETs are dealt with. A new analytical model of the built-in potential is proposed and shown to correct the errors due to wrong boundary conditions. The roles of quantum confinement effects, material parameters and architecture of nanoscale III-V MOSFETs on the electrostatic integrity in terms of SCEs are thoroughly examined. A modified parameter to capture the drain induced barrier lowering is used to predict the performance degradation in the post-threshold region of the MOSFETs. Impact of the source to drain tunneling on the subthreshold behavior and hence the scalability of III-V devices is also analyzed in this thesis
Roumanille, Pierre. "Matériaux d'assemblage basse température pour applications électroniques : de l'intérêt des oxalates et formiates de métaux". Thesis, Toulouse 3, 2018. http://www.theses.fr/2018TOU30106/document.
Texto completo da fonteDue to environmental and health concerns, new regulations led to a restriction in the use of lead in electronic equipment. Joining materials (based on tin, silver, copper, bismuth ...) for surface-mount technology are subject to many development work in order to comply with regulatory and technical requirements. The potential of metal carboxylates in electronics has already been demonstrated in the development of metal-organic decomposition processes. The thermal decomposition under controlled atmosphere of such precursors leads to the creation of metal nanoparticles with an increased reactivity compared to that of micron sized particles. The use of nanomaterials is a seriously considered way for developing low temperature joining processes for electronics. It is based on the well-known decrease of melting and sintering temperatures of nanomaterials with particle size. In this context, this work of thesis presents the study of the controlled decomposition of metal-organic precursors intended to be integrated into a low-temperature lead-free joining process. The thermal behavior of several metal-organic precursors of tin and bismuth, as well as the influence of the decomposition atmosphere, were studied. The relationship between the metal particles size and their melting point has been emphasized, as well as the major influence of oxidation on the evolution of particles size and their ability to make reliable joints
François, Terry. "Caractérisation électrique et analyse de mémoires non-volatiles embarquées à base de matériaux ferroélectriques". Electronic Thesis or Diss., Aix-Marseille, 2022. http://www.theses.fr/2022AIXM0390.
Texto completo da fonteFerroelectric materials are recently showing, since 2011, a novel appeal for microelectronic applications as it has been shown that, under specific crystal configuration, Hafnium-based dielectrics exhibit a ferroelectric behavior. This opens the way towards highly scalable and CMOS-compatible memory devices. CEA-LETI is currently investigating novel Hafnium-based ferroelectric materials for non-volatile memory applications. One need to evaluate their ferroelectric behavior through dedicated electrical characterization techniques, and in particular, to extract the remanent polarization, which is the direct picture of the memory window for a memory product, the coercive field, the programming speed and the endurance. Moreover, through the analysis of their ferroelectric performances, two materials, Hf0.5Zr0.5O2 and silicon-doped HfO2, are optimized. Furthermore, it is demonstrated that both materials remain ferroelectric after complete integration in the Back-End-Of-Line of a 130nm CMOS technology, with compatible thermal budget. These devices are then integrated in a 16kbit memory array, based on 1T-1C FeRAM architecture. A setup dedicated to this circuit’s characterization is developed and allows the measurement of binary state distributions of the bitcells. Both distributions are demonstrated fully separated, defining an operating memory window which guarantees no bitfails at the 16kbit scale. Finally, by measuring several capacitor surfaces at various programming voltages, one can extrapolate the expected memory window of this kind of 1T-1C architecture in more advanced nodes, following the ongoing trend of densification of industrial microelectronic circuits
Bonvalot, Cyrille. "Contribution à la compréhension du courant d'obscurité dans les détecteurs infrarouges matriciels à base de matériaux III-V". Thesis, université Paris-Saclay, 2020. http://www.theses.fr/2020UPAST016.
Texto completo da fonteLynred is one of the major actors in the high quality cooled infrared detectors market, originally based on II-VI materials (HgCdTe), and more recently on III-V materials (QWIP, InSb, InGaAs). The InSb and InGaAs detectors are composed of photodiode organized in an array, in order to get a two dimension imager. The study reported here aim to enhance our comprehension of the dark current of these photodiodes. The subject is addressed in three steps: a study of the junction profile, an analyze of the phenomenon responsible for the dark current generated in the material’s bulk, and the highlighting of the interfaces role. The junction profile is established from sensibility optimized SIMS measurement. The thicknesses of the absorbing InGaAs layer, and of the space charge region, are obtained from capacity measurement. Because of the non-abrupt junction, the determination of the doping concentration can’t be achieved form the capacity. Diffusion current, which have to be taken into account for the InGaAs diode, is highly dependent upon the double heterojunction. Therefore, vertical and radial diffusion mechanisms have to be considered separately. Additionally, array configuration brings another constraint. Generation current is the witness of the actual technologies progresses, high quality materials with low default concentration and small sized diodes. Bulk material contribution is mostly negligible in comparison of the surface states one, localized at the InSb/SiO or the InGaAs/InP interfaces. Hence, the passivation process, or the epitaxy, is the critical point of those technologies. This thesis made it possible to identify the mechanisms responsible for the dark current of the InSb and InGaAs diodes, allowing us to point out the critical fabrication processes and to propose optimization of design. Characterization means developed during those three years might be used in the production line. It will allow monitoring the stability of the fabrication processes, especially the doping and thickness of the InGaAs absorbing layer. Those methods have the advantages of being simple to use, relatively cheap and above all non-destructives
Lefter, Constantin. "Etudes des propriétés électriques des matériaux à transition de spin : vers des dispositifs pour la nano-électronique". Thesis, Toulouse 3, 2016. http://www.theses.fr/2016TOU30003/document.
Texto completo da fonteThe central theme of this thesis is the evaluation of potential interest and applicability of molecular spin crossover (SCO) complexes for nanoelectronic applications. The electrical properties of the [Fe(Htrz)2(trz)](BF4) complex and its Zn substituted analogues were analyzed first in the bulk powder form using broadband dielectric spectroscopy. It has been shown that the ac and dc conductivities as well as the dielectric constant and the dielectric relaxation frequency exhibit an important drop when going from the low spin (LS) to the high spin (HS) state. The iron ions kept their spin transition properties in the Zn diluted samples, but the SCO curves were significantly altered. The Zn substitution of active iron centers led to an important decrease of the electrical conductivity of ca. 6 orders of magnitude (for Zn/Fe = 0.75). We concluded from these results that the ferrous ions directly participate to the charge transport process, which was analyzed in the frame of an activated hopping conductivity model. Micrometric particles of [Fe(Htrz)2(trz)](BF4) were then integrated by dielectrophoresis between interdigitated gold electrodes leading to a device exhibiting bistability in the I-V,T characteristics. The stability of the starting material and the electronic device were carefully controlled and the concomitant effect of temperature changes, light irradiation and voltage bias on the current intensity were analyzed in detail. We showed that the device can be preferentially addressed by light stimulation according to its spin state and the switching from the metastable HS to the stable LS state was also demonstrated by applying an electric field step inside the hysteresis loop. The field effects were discussed in the frame of static and dynamic Ising-like models, while the photo-induced phenomena were tentatively attributed to surface phenomena. The [Fe(bpz)2(phen)] complex was also investigated by dielectric spectroscopy in the bulk powder form and then integrated by high vacuum thermal evaporation into a large-area vertical device with Al (top) and ITO (bottom) electrodes. This approach allowed us to probe the spin-state switching in the SCO layer by optical means while detecting the associated resistance changes both in the tunneling (10 nm junction) and injection-limited (30 and 100 nm junctions) regimes. The tunneling current in the thin SCO junctions showed a drop when going from the LS to the HS state, while the rectifying behavior of the 'thick' junctions did not reveal any significant spin-state dependence. The ensemble of these results provides guidance with new perspectives for the construction of electronic and spintronic devices incorporating SCO molecular materials
Franck, Pierre. "Mesoscopic electromagnetic model of carbon-nanotube arrays and scalable technological processes : Application to the fabrication of novel antennasCo-dirigée par Beng Kang Tay". Limoges, 2013. http://aurore.unilim.fr/theses/nxfile/default/6358938e-2b7f-488e-a1d0-6bd8f7e045e6/blobholder:0/2013LIMO4043.pdf.
Texto completo da fonteNous présentons une étude de faisabilité d’antennes innovantes basées sur les propriétés particulières des nanotubes de carbone (NTC). Celles-ci pourraient permettre une amélioration des performances des antennes électriquement courtes mais aussi le développement de systèmes innovants tels que des réseaux réflecteurs à commande optique. Ce pourrait aussi être une technologie intéressante pour les applications en plein essor dans les domaines des ondes millimétriques et terahertz. Des avancées significatives ont été réalisées suivant les quatre axes interdépendants qui régissent ces antennes : modélisation des NTC, analyse des antennes basées sur les NTC, fabrication à partir de NTC et caractérisation. Ceci nous a permis d’une part de concevoir et de fabriquer les premiers prototypes d’antennes électriquement courtes à base de NTC et d’autre part de mettre en évidence des tendances dans la réponse des NTC sous illumination. En effet, en utilisant une approche mésoscopique, nous avons développé un modèle électromagnétique original pour les ensembles de nano-éléments alignés, en particulier les NTC, permettant leur intégration dans des logiciels de simulation électromagnétique classiques et donc la mise en correspondance des possibilités de fabrication et de simulation. En parallèle nous avons reproduit et développé des méthodes de croissance et de dépôt de NTC et établi des procédés de fabrication pouvant être adaptés à grande échelle. De plus, un modèle analytique des antennes monopôles à base de NTC a été établi à partir d’une approche ligne de transmission. Ces techniques nous ont permis de mettre en avant les compromis nécessaires dans la conception d’antennes de taille réduite à base de NTC et ainsi de concevoir et fabriquer de premiers prototypes. Elles ont aussi été appliquées à la fabrication de structures de test pour une caractérisation des NTC sous illumination. Ceci nous a permis de mettre en évidence les conditions optimales pour générer un courant photoélectrique dans les NTC et d’évaluer les performances pouvant être attendues comme base pour de futurs systèmes
Ottapilakkal, Vishnu. "2D Hexagonal boron nitride epitaxy on epigraphene for electronics". Electronic Thesis or Diss., Université de Lorraine, 2024. http://www.theses.fr/2024LORR0122.
Texto completo da fonteIn this century, the importance of nanoelectronics has grown with the demand for smaller, more efficient devices. Traditional silicon-based technologies face challenges, particularly in scaling down transistors while maintaining performance. Shorter channel lengths improve speed and device density but lead to issues like electromigration, leakage, and thermal load. Graphene, a two-dimensional material, offers a solution due to its high carrier mobility, thermal conductivity, and stability, making it a promising alternative to silicon. Utilizing graphene's properties could overcome silicon's limitations, enabling next-generation nanoelectronics with better performance and scalability. Monolayer graphene is typically produced via exfoliation methods, but these often introduce defects and contaminants, degrading its electrical properties and limiting large-scale production. Chemical vapor deposition (CVD) offers a more scalable solution but can still introduce defects, while reducing graphene oxide leads to too many imperfections for nanoelectronics. Epitaxial graphene (epigraphene) offers superior transport properties for high-performance devices but, like all graphene, is sensitive to environmental factors and requires effective passivation. Hexagonal boron nitride (h-BN) is a promising passivation material due to its structural compatibility with graphene. While conventional methods of h-BN transfer introduce defects, metal-organic vapor phase epitaxy (MOVPE) allows direct growth on epigraphene, solving these issues. This thesis investigates the growth of thin h-BN layers on various epigraphene substrates (monolayer, multilayer, and patterned) using van der Waals epitaxy, with a focus on their potential applications in thin-film transistors (TFTs). The study is divided into three key areas: First, we explored the MOVPE growth of h-BN layers (up to 20 nm) on monolayer and multilayer epigraphene on silicon carbide (SiC), examining the silicon-terminated (Si-face) and carbon-terminated (C-face) faces. Both substrates exhibited similar surface characteristics, and thermal annealing was found to improve crystal quality without compromising the integrity of the h-BN/epigraphene heterostructure up to 1550 degrees. Second, we explored the selective growth of high quality h-BN over patterned epigraphene by etching to retain only the desired graphene patterns prior to h-BN growth. This method helped in reducing particle formation and damage compared to conventional post-deposition patterning techniques. Finally, TFT devices were fabricated from these heterostructures after investigating various etching methods (CF4, XeF2, SF6) to remove h-BN and establish contact with the underlying epigraphene. Preliminary electrical characterizations showed changes in resistance with magnetic fields, although contact resistance was higher than anticipated. This research provides a promising technique for producing high-quality h-BN layers on graphene-based devices, paving the way for further advancements while identifying areas for improvement
Hayes, Maxim. "Intégration de collecteurs de charges avancés dans les cellules solaires bifaciales à haut rendement : vers un procédé générique pour les nouveaux matériaux silicium". Electronic Thesis or Diss., Aix-Marseille, 2020. http://www.theses.fr/2020AIXM0519.
Texto completo da fonteThanks to a relatively simple fabrication process and high conversion efficiency values the PERC structure is well established at the industrial level. Nevertheless, industrial PERC solar cells performances are mostly limited by two charge carrier recombination sources: P thermally diffused emitter on the front side and the Al-Si interfaces at the rear contacts. The main goal of this work aims at limiting both recombination sources. A selective emitter (SE) obtained by plasma immersion ion implantation (PIII) is developed for an integration on the front side; whereas a B-doped polysilicon (poly-Si) on oxide passivated contact (PC) is integrated on the back side. The second goal of this work consists in evaluating the compatibility between these advanced carrier collectors and directionally solidified Si materials. SE featuring good geometrical properties and a well-controlled doping were fabricated thanks to an in situ localized doping process obtained with a specific mask developed for PIII. Besides, several metal deposition technologies were investigated for the poly-Si(B). Fire-through screen-printing appears as the most promising approach so far. Indeed, the deposition of a non-sacrificial hydrogen-rich layer allowed to reach an excellent surface passivation level for solar cell precursors. However, the specific contact resistivity obtained remains too high for an optimal cell integration. Lastly, the fabrication of poly-Si PC showed excellent external gettering efficiencies for multicrystalline Si. Thus, the potential of the developed cell structure to be integrated with low-cost and low carbon footprint materials is encouraging
Livros sobre o assunto "Nanoélectronique – Matériaux"
1955-, Bozhevolnyi Sergey I., ed. Plasmonic nanoguides and circuits. Singapore: Pan Stanford, 2009.
Encontre o texto completo da fonte1955-, Bozhevolnyi Sergey I., ed. Plasmonic nanoguides and circuits. Singapore: Distributed by World Scientific Pub., 2009.
Encontre o texto completo da fonte1955-, Bozhevolnyi Sergey I., ed. Plasmonic nanoguides and circuits. Singapore: Distributed by World Scientific Pub., 2009.
Encontre o texto completo da fonteNanoplasmonics Advanced Device Applications. CRC Press, 2013.
Encontre o texto completo da fonteTanaka, Toshikatsu, e Takahiro Imai. Advanced Nanodielectrics: Fundamentals and Applications. Jenny Stanford Publishing, 2017.
Encontre o texto completo da fonteAdvanced Nanodielectrics: Fundamentals and Applications. Taylor & Francis Group, 2017.
Encontre o texto completo da fonteWong, Hei. Nano-CMOS Gate Dielectric Engineering. Taylor & Francis Group, 2017.
Encontre o texto completo da fonteNano-CMOS gate dielectric engineering. Boca Raton: CRC Press, 2012.
Encontre o texto completo da fonteWong, Hei. Nano-CMOS Gate Dielectric Engineering. Taylor & Francis Group, 2013.
Encontre o texto completo da fonteWong, Hei. Nano-CMOS Gate Dielectric Engineering. Taylor & Francis Group, 2017.
Encontre o texto completo da fonteCapítulos de livros sobre o assunto "Nanoélectronique – Matériaux"
Lévy, Didier, e François Martin. "Chapitre 11 : Les matériaux en nanoélectronique industrielle". In Chimie, nanomatériaux, nanotechnologies, 181–96. EDP Sciences, 2020. http://dx.doi.org/10.1051/978-2-7598-2399-4-013.
Texto completo da fonteLévy, Didier, e François Martin. "Chapitre 11 : Les matériaux en nanoélectronique industrielle". In Chimie, nanomatériaux, nanotechnologies, 181–96. EDP Sciences, 2020. http://dx.doi.org/10.1051/978-2-7598-2399-4.c013.
Texto completo da fonte