Artigos de revistas sobre o tema "Multigate transistor"
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Lee, Chi-Woo, Aryan Afzalian, Nima Dehdashti Akhavan, Ran Yan, Isabelle Ferain e Jean-Pierre Colinge. "Junctionless multigate field-effect transistor". Applied Physics Letters 94, n.º 5 (2 de fevereiro de 2009): 053511. http://dx.doi.org/10.1063/1.3079411.
Texto completo da fonteMartins, Rodrigo, Diana Gaspar, Manuel J. Mendes, Luis Pereira, Jorge Martins, Pydi Bahubalindruni, Pedro Barquinha e Elvira Fortunato. "Papertronics: Multigate paper transistor for multifunction applications". Applied Materials Today 12 (setembro de 2018): 402–14. http://dx.doi.org/10.1016/j.apmt.2018.07.002.
Texto completo da fonteJayachandran, Remya, Dhanaraj Jagalchandran e Perinkolam Chidambaram Subramaniam. "Planar CMOS and multigate transistors based wide-band OTA buffer amplifiers for heavy resistance load". Facta universitatis - series: Electronics and Energetics 35, n.º 1 (2022): 13–28. http://dx.doi.org/10.2298/fuee2201013j.
Texto completo da fonteSelvi, K. Kalai, K. S. Dhanalakshmi e Kalaivani Kanagarajan. "Performance Estimation of Recessed Modified Junctionless Multigate Transistor". Journal of Nano- and Electronic Physics 14, n.º 1 (2022): 01008–1. http://dx.doi.org/10.21272/jnep.14(1).01008.
Texto completo da fonteKohda, S., K. Masuda, K. Matsuzawa e Y. Kitano. "A giant chip multigate transistor ROM circuit design". IEEE Journal of Solid-State Circuits 21, n.º 5 (outubro de 1986): 713–19. http://dx.doi.org/10.1109/jssc.1986.1052599.
Texto completo da fonteDelgado-Notario, Juan A., Wojciech Knap, Vito Clericò, Juan Salvador-Sánchez, Jaime Calvo-Gallego, Takashi Taniguchi, Kenji Watanabe et al. "Enhanced terahertz detection of multigate graphene nanostructures". Nanophotonics 11, n.º 3 (3 de janeiro de 2022): 519–29. http://dx.doi.org/10.1515/nanoph-2021-0573.
Texto completo da fonteOno, Y., H. Inokawa e Y. Takahashi. "Binary adders of multigate single-electron transistors: specific design using pass-transistor logic". IEEE Transactions on Nanotechnology 1, n.º 2 (junho de 2002): 93–99. http://dx.doi.org/10.1109/tnano.2002.804743.
Texto completo da fonteWahid, Syamsudin Nur. "SIMULASI KUANTUM TRANSISTOR EFEK MEDAN MULTI GERBANG (NWFET)". Jurnal Qua Teknika 7, n.º 1 (15 de março de 2017): 53–64. http://dx.doi.org/10.35457/quateknika.v7i1.218.
Texto completo da fonteWahid, Syamsudin Nur. "SIMULASI KUANTUM TRANSISTOR EFEK MEDAN MULTI GERBANG (NWFET)". JURNAL QUA TEKNIKA 7, n.º 1 (15 de março de 2017): 53–64. http://dx.doi.org/10.30957/quateknika.v7i1.218.
Texto completo da fonteCheng, Hui-Wen, e Yiming Li. "Comparative Study of Multigate and Multifin Metal–Oxide–Semiconductor Field-Effect Transistor". Japanese Journal of Applied Physics 49, n.º 4 (20 de abril de 2010): 04DC09. http://dx.doi.org/10.1143/jjap.49.04dc09.
Texto completo da fontePandian, M. Karthigai, N. B. Balamurugan e A. Pricilla. "Potential and Quantum Threshold Voltage Modeling of Gate-All-Around Nanowire MOSFETs". Active and Passive Electronic Components 2013 (2013): 1–9. http://dx.doi.org/10.1155/2013/153157.
Texto completo da fontePark, Jae-Hong, e Chul-Ju Kim. "A Study on the Fabrication of a Multigate/Multichannel Polysilicon Thin Film Transistor". Japanese Journal of Applied Physics 36, Part 1, No. 3B (30 de março de 1997): 1428–32. http://dx.doi.org/10.1143/jjap.36.1428.
Texto completo da fonteOthman, Noraini, Mohd Khairuddin Md Arshad, Syarifah Norfaezah Sabki e U. Hashim. "Ultra-Thin Body and Buried Oxide (UTBB) SOI MOSFETs on Suppression of Short-Channel Effects (SCEs): A Review". Advanced Materials Research 1109 (junho de 2015): 257–61. http://dx.doi.org/10.4028/www.scientific.net/amr.1109.257.
Texto completo da fonteBonnaud, Olivier, Peng Zhang, Emmanuel Jacques e Régis Rogel. "(Invited) Vertical Channel Thin Film Transistor: Improvement Approach Similar to Multigate Monolithic CMOS Technology". ECS Transactions 37, n.º 1 (16 de dezembro de 2019): 29–37. http://dx.doi.org/10.1149/1.3600721.
Texto completo da fonteJana, Biswabandhu, Anindya Jana, Jamuna Kanta Sing e Subir Kumar Sarkar. "Performance of Multigate Single Electron Transistor in Wide Temperature Range and 22 nm Hybrid Technology". Journal of Nanoelectronics and Optoelectronics 9, n.º 3 (1 de junho de 2014): 357–62. http://dx.doi.org/10.1166/jno.2014.1595.
Texto completo da fonteParkula, Vitaliy, Marcello Berto, Chiara Diacci, Bianca Patrahau, Michele Di Lauro, Alessandro Kovtun, Andrea Liscio et al. "Harnessing Selectivity and Sensitivity in Electronic Biosensing: A Novel Lab-on-Chip Multigate Organic Transistor". Analytical Chemistry 92, n.º 13 (2 de junho de 2020): 9330–37. http://dx.doi.org/10.1021/acs.analchem.0c01655.
Texto completo da fonteShao, Feng, Ping Feng, Changjin Wan, Xiang Wan, Yi Yang, Yi Shi e Qing Wan. "Multifunctional Logic Demonstrated in a Flexible Multigate Oxide-Based Electric-Double-Layer Transistor on Paper Substrate". Advanced Electronic Materials 3, n.º 3 (10 de fevereiro de 2017): 1600509. http://dx.doi.org/10.1002/aelm.201600509.
Texto completo da fonteKumar, Ravi, E. Sathish Kumar, S. Vijayalakshmi, Dumpa Prasad, A. Mohamedyaseen, Shruti Bhargava Choubey, N. Arun Vignesh e A. Johnson Santhosh. "Design and Analysis of Nanosheet Field-Effect Transistor for High-Speed Switching Applications". Journal of Nanomaterials 2023 (24 de julho de 2023): 1–7. http://dx.doi.org/10.1155/2023/6460617.
Texto completo da fonteYedukondalu, Udara, Vinod Arunachalam, Vasudha Vijayasri Bolisetty e Ravikumar Guru Samy. "Fully synthesizable multi-gate dynamic voltage comparator for leakage reduction and low power application". Indonesian Journal of Electrical Engineering and Computer Science 28, n.º 2 (1 de novembro de 2022): 716. http://dx.doi.org/10.11591/ijeecs.v28.i2.pp716-723.
Texto completo da fonteSaha, Priyanka, Rudra Sankar Dhar, Swagat Nanda, Kuleen Kumar e Moath Alathbah. "The Optimization and Analysis of a Triple-Fin Heterostructure-on-Insulator Fin Field-Effect Transistor with a Stacked High-k Configuration and 10 nm Channel Length". Nanomaterials 13, n.º 23 (23 de novembro de 2023): 3008. http://dx.doi.org/10.3390/nano13233008.
Texto completo da fonteŁukasiak, Lidia, e Andrzej Jakubowski. "History of Semiconductors". Journal of Telecommunications and Information Technology, n.º 1 (26 de junho de 2023): 3–9. http://dx.doi.org/10.26636/jtit.2010.1.1015.
Texto completo da fonteLee, Chi-Woo, Isabelle Ferain, Aryan Afzalian, Ran Yan, Nima Dehdashti Akhavan, Pedram Razavi e Jean-Pierre Colinge. "Performance estimation of junctionless multigate transistors". Solid-State Electronics 54, n.º 2 (fevereiro de 2010): 97–103. http://dx.doi.org/10.1016/j.sse.2009.12.003.
Texto completo da fonteLee, Chi-Woo, Alexei N. Nazarov, Isabelle Ferain, Nima Dehdashti Akhavan, Ran Yan, Pedram Razavi, Ran Yu, Rodrigo T. Doria e Jean-Pierre Colinge. "Low subthreshold slope in junctionless multigate transistors". Applied Physics Letters 96, n.º 10 (8 de março de 2010): 102106. http://dx.doi.org/10.1063/1.3358131.
Texto completo da fonteJang, Doyoung, Jae Woo Lee, Chi-Woo Lee, Jean-Pierre Colinge, Laurent Montès, Jung Il Lee, Gyu Tae Kim e Gérard Ghibaudo. "Low-frequency noise in junctionless multigate transistors". Applied Physics Letters 98, n.º 13 (28 de março de 2011): 133502. http://dx.doi.org/10.1063/1.3569724.
Texto completo da fonteFerain, Isabelle, Cynthia A. Colinge e Jean-Pierre Colinge. "Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors". Nature 479, n.º 7373 (novembro de 2011): 310–16. http://dx.doi.org/10.1038/nature10676.
Texto completo da fonteSong, Yi, e Xiuling Li. "Scaling junctionless multigate field-effect transistors by step-doping". Applied Physics Letters 105, n.º 22 (dezembro de 2014): 223506. http://dx.doi.org/10.1063/1.4902864.
Texto completo da fontePan, Andrew, Songtao Chen e Chi On Chui. "Electrostatic Modeling and Insights Regarding Multigate Lateral Tunneling Transistors". IEEE Transactions on Electron Devices 60, n.º 9 (setembro de 2013): 2712–20. http://dx.doi.org/10.1109/ted.2013.2272040.
Texto completo da fontePrasad, Divya, Ahmet Ceyhan, Chenyun Pan e Azad Naeemi. "Adapting Interconnect Technology to Multigate Transistors for Optimum Performance". IEEE Transactions on Electron Devices 62, n.º 12 (dezembro de 2015): 3938–44. http://dx.doi.org/10.1109/ted.2015.2487888.
Texto completo da fonteHofheinz, M., X. Jehl, M. Sanquer, R. Cerutti, A. Cros, P. Coronel, H. Brut e T. Skotnicki. "Measurement of Capacitances in Multigate Transistors by Coulomb Blockade Spectroscopy". IEEE Transactions on Nanotechnology 7, n.º 1 (janeiro de 2008): 74–78. http://dx.doi.org/10.1109/tnano.2007.908683.
Texto completo da fonteAldegunde, Manuel, Antonio Jesus Garcia-Loureiro e Karol Kalna. "3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors". IEEE Transactions on Electron Devices 60, n.º 5 (maio de 2013): 1561–67. http://dx.doi.org/10.1109/ted.2013.2253465.
Texto completo da fonteShin, Mincheol. "Three-dimensional quantum simulation of multigate nanowire field effect transistors". Mathematics and Computers in Simulation 79, n.º 4 (dezembro de 2008): 1060–70. http://dx.doi.org/10.1016/j.matcom.2007.10.007.
Texto completo da fonteXie, Dingdong, Jie Jiang, Wennan Hu, Yongli He, Junliang Yang, Jun He, Yongli Gao e Qing Wan. "Coplanar Multigate MoS2 Electric-Double-Layer Transistors for Neuromorphic Visual Recognition". ACS Applied Materials & Interfaces 10, n.º 31 (24 de julho de 2018): 25943–48. http://dx.doi.org/10.1021/acsami.8b07234.
Texto completo da fonteBradford, T., e S. P. McAlister. "The use of multiple-gated MOSFETs in a simple application". Canadian Journal of Physics 74, S1 (1 de dezembro de 1996): 182–85. http://dx.doi.org/10.1139/p96-855.
Texto completo da fonteJung, Doohwan, Huan Zhao e Hua Wang. "A CMOS Highly Linear Doherty Power Amplifier With Multigated Transistors". IEEE Transactions on Microwave Theory and Techniques 67, n.º 5 (maio de 2019): 1883–91. http://dx.doi.org/10.1109/tmtt.2019.2899596.
Texto completo da fonteLou, Haijun, Dan Li, Yan Dong, Xinnan Lin, Shengqi Yang, Jin He e Mansun Chan. "Effects of Fin Sidewall Angle on Subthreshold Characteristics of Junctionless Multigate Transistors". Japanese Journal of Applied Physics 52, n.º 10R (1 de outubro de 2013): 104302. http://dx.doi.org/10.7567/jjap.52.104302.
Texto completo da fonteZhang, Dongli, Mingxiang Wang, Huaisheng Wang e Yilin Yang. "Enhanced Negative Bias Stress Degradation in Multigate Polycrystalline Silicon Thin-Film Transistors". IEEE Transactions on Electron Devices 64, n.º 10 (outubro de 2017): 4363–67. http://dx.doi.org/10.1109/ted.2017.2737489.
Texto completo da fonteTakahashi, Yasuo, Akira Fujiwara, Kenji Yamazaki, Hideo Namatsu, Kenji Kurihara e Katsumi Murase. "Multigate single-electron transistors and their application to an exclusive-OR gate". Applied Physics Letters 76, n.º 5 (31 de janeiro de 2000): 637–39. http://dx.doi.org/10.1063/1.125843.
Texto completo da fonteLou, Haijun, Baili Zhang, Dan Li, Xinnan Lin, Jin He e Mansun Chan. "Suppression of subthreshold characteristics variation for junctionless multigate transistors using high-k spacers". Semiconductor Science and Technology 30, n.º 1 (5 de dezembro de 2014): 015008. http://dx.doi.org/10.1088/0268-1242/30/1/015008.
Texto completo da fonteRanjan, Akhil, Ravikiran Lingaparthi, Nethaji Dharmarasu e K. Radhakrishnan. "Enhanced NO2 Gas Sensing Performance of Multigate Pt/AlGaN/GaN High Electron Mobility Transistors". Journal of The Electrochemical Society 168, n.º 4 (1 de abril de 2021): 047502. http://dx.doi.org/10.1149/1945-7111/abed42.
Texto completo da fonteColinge, Jean-Pierre, Aryan Afzalian, Chi-Woo Lee, Ran Yan e Nima Dehdashti Akhavan. "Influence of carrier confinement on the subthreshold swing of multigate silicon-on-insulator transistors". Applied Physics Letters 92, n.º 13 (31 de março de 2008): 133511. http://dx.doi.org/10.1063/1.2907330.
Texto completo da fonteChen, Lun-Chun, Yu-Ru Lin, Yu-Shuo Chang e Yung-Chun Wu. "High-Performance Stacked Double-Layer N-Channel Poly-Si Nanosheet Multigate Thin-Film Transistors". IEEE Electron Device Letters 38, n.º 9 (setembro de 2017): 1256–58. http://dx.doi.org/10.1109/led.2017.2725325.
Texto completo da fonteTae Park, Jong, Jin Young Kim e Jean Pierre Colinge. "Negative-bias-temperature-instability and hot carrier effects in nanowire junctionless p-channel multigate transistors". Applied Physics Letters 100, n.º 8 (20 de fevereiro de 2012): 083504. http://dx.doi.org/10.1063/1.3688245.
Texto completo da fonteGarcia-Loureiro, Antonio J., Natalia Seoane, Manuel Aldegunde, Raúl Valin, Asen Asenov, Antonio Martinez e Karol Kalna. "Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors". IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 30, n.º 6 (junho de 2011): 841–51. http://dx.doi.org/10.1109/tcad.2011.2107990.
Texto completo da fonteElmessary, Muhammad A., Daniel Nagy, Manuel Aldegunde, Jari Lindberg, Wulf G. Dettmer, Djordje Peric, Antonio J. Garcia-Loureiro e Karol Kalna. "Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors". IEEE Transactions on Electron Devices 63, n.º 3 (março de 2016): 933–39. http://dx.doi.org/10.1109/ted.2016.2519822.
Texto completo da fonteChao Lu, A. V. H. Pham, M. Shaw e C. Saint. "Linearization of CMOS Broadband Power Amplifiers Through Combined Multigated Transistors and Capacitance Compensation". IEEE Transactions on Microwave Theory and Techniques 55, n.º 11 (novembro de 2007): 2320–28. http://dx.doi.org/10.1109/tmtt.2007.907734.
Texto completo da fonteKumar, Nitish, Jialuo Chen, Monodeep Kar, Suresh K. Sitaraman, Saibal Mukhopadhyay e Satish Kumar. "Multigated Carbon Nanotube Field Effect Transistors-Based Physically Unclonable Functions As Security Keys". IEEE Internet of Things Journal 6, n.º 1 (fevereiro de 2019): 325–34. http://dx.doi.org/10.1109/jiot.2018.2838580.
Texto completo da fonteMohamed, Mohamed, Zlatan Aksamija, Wolfgang Vitale, Fawad Hassan, Kyeong-Hyun Park e Umberto Ravaioli. "A Conjoined Electron and Thermal Transport Study of Thermal Degradation Induced During Normal Operation of Multigate Transistors". IEEE Transactions on Electron Devices 61, n.º 4 (abril de 2014): 976–83. http://dx.doi.org/10.1109/ted.2014.2306422.
Texto completo da fonteAkhavan, Nima Dehdashti, Aryan Afzalian, Chi-Woo Lee, Ran Yan, Isabelle Ferain, Pedram Razavi, Ran Yu, Giorgos Fagas e Jean-Pierre Colinge. "Effect of intravalley acoustic phonon scattering on quantum transport in multigate silicon nanowire metal-oxide-semiconductor field-effect transistors". Journal of Applied Physics 108, n.º 3 (agosto de 2010): 034510. http://dx.doi.org/10.1063/1.3457848.
Texto completo da fonteZhang, Pengpeng, Theresa S. Mayer e Thomas N. Jackson. "2007 IEEE Device Research Conference: Tour de Force Multigate and Nanowire Metal Oxide Semiconductor Field-Effect Transistors and Their Application". ACS Nano 1, n.º 1 (agosto de 2007): 6–9. http://dx.doi.org/10.1021/nn7001344.
Texto completo da fonteJung-Hun Oh, Min Han, Sang-Jin Lee, Byoung-Chul Jun, Sung-Woon Moon, Jae-Seo Lee, Jin-Koo Rhee e Sam-Dong Kim. "Effects of Multigate-Feeding Structure on the Gate Resistance and RF Characteristics of 0.1-$\mu{\hbox{m}}$ Metamorphic High Electron-Mobility Transistors". IEEE Transactions on Microwave Theory and Techniques 57, n.º 6 (junho de 2009): 1487–93. http://dx.doi.org/10.1109/tmtt.2009.2020671.
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