Literatura científica selecionada sobre o tema "MIS devices"
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Artigos de revistas sobre o assunto "MIS devices"
Hawasli, Ammar H., Jawad M. Khalifeh, Ajay Chatrath, Chester K. Yarbrough e Wilson Z. Ray. "Minimally invasive transforaminal lumbar interbody fusion with expandable versus static interbody devices: radiographic assessment of sagittal segmental and pelvic parameters". Neurosurgical Focus 43, n.º 2 (agosto de 2017): E10. http://dx.doi.org/10.3171/2017.5.focus17197.
Texto completo da fonteAl-Begg, S. M., S. H. Saeed e A. S. Al-Rawas. "Thermal annealing effects on the electrical characteristics of alpha particles irradiated MIS device AuTa2O5GaAs". Journal of Ovonic Research 19, n.º 4 (julho de 2023): 359–67. http://dx.doi.org/10.15251/jor.2023.194.359.
Texto completo da fonteZhang, Xiaodong, Xing Wei, Peipei Zhang, Hui Zhang, Li Zhang, Xuguang Deng, Yaming Fan et al. "Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON as Composite Gate Dielectric". Electronics 11, n.º 6 (13 de março de 2022): 895. http://dx.doi.org/10.3390/electronics11060895.
Texto completo da fonteEngstrom, O., e A. Carlsson-Gylemo. "MIS Devices for optical information processing". IEEE Transactions on Electron Devices 32, n.º 11 (novembro de 1985): 2438–40. http://dx.doi.org/10.1109/t-ed.1985.22292.
Texto completo da fonteMoriwaki, M. M., J. R. Srour, L. F. Lou e J. R. Waterman. "Ionizing radiation effects on HgCdTe MIS devices". IEEE Transactions on Nuclear Science 37, n.º 6 (1990): 2034–41. http://dx.doi.org/10.1109/23.101226.
Texto completo da fonteTardy, J., I. Thomas, P. Viktorovitch, M. Gendry, J. L. Perrossier, C. Santinelli, M. P. Besland, P. Louis e G. Post. "Long-term stability of InP MIS devices". Applied Surface Science 50, n.º 1-4 (junho de 1991): 383–89. http://dx.doi.org/10.1016/0169-4332(91)90203-v.
Texto completo da fonteHynecek, Jaroslav. "4455739 Process protection for individual device gates on large area MIS devices". Microelectronics Reliability 25, n.º 1 (janeiro de 1985): 204. http://dx.doi.org/10.1016/0026-2714(85)90469-x.
Texto completo da fontePreuveneers, D., e Y. Berbers. "Encoding Semantic Awareness in Resource-Constrained Devices". IEEE Intelligent Systems 23, n.º 2 (março de 2008): 26–33. http://dx.doi.org/10.1109/mis.2008.25.
Texto completo da fonteRagusa, Edoardo, Christian Gianoglio, Rodolfo Zunino e Paolo Gastaldo. "Image Polarity Detection on Resource-Constrained Devices". IEEE Intelligent Systems 35, n.º 6 (1 de novembro de 2020): 50–57. http://dx.doi.org/10.1109/mis.2020.3011586.
Texto completo da fonteHsu, Che-Ching, Pei-Chien Shen, Yi-Nan Zhong e Yue-Ming Hsin. "AlGaN/GaN MIS-HEMTs with a p-GaN Cap Layer". MRS Advances 3, n.º 3 (28 de dezembro de 2017): 143–46. http://dx.doi.org/10.1557/adv.2017.626.
Texto completo da fonteTeses / dissertações sobre o assunto "MIS devices"
Torres, Almarza Ignacio. "Interfacial effects in polymer MIS devices". Thesis, Bangor University, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.409836.
Texto completo da fonteThomas, Nicholas John. "GaAs/Langmuir-Blodgett film MIS devices". Thesis, Durham University, 1986. http://etheses.dur.ac.uk/6829/.
Texto completo da fonteClifton, Paul Alan. "Characterisation of silicon MIS negative resistance devices". Thesis, Durham University, 1989. http://etheses.dur.ac.uk/6434/.
Texto completo da fonteHolman, Brian. "The electrical characterization of tantalum capacitors as MIS devices". Connect to this title online, 2008. http://etd.lib.clemson.edu/documents/1219849377/.
Texto completo da fonteLancaster, Janet. "Organic MIS Devices Based on a High-k Dielectric". Thesis, Bangor University, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.520852.
Texto completo da fonteEvans, N. J. "Influence of gases on the electrical properties of MIS devices". Thesis, Durham University, 1986. http://etheses.dur.ac.uk/6866/.
Texto completo da fonteUsman, Muhammad. "Impact of Ionizing Radiation on 4H-SiC Devices". Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-60763.
Texto completo da fonteQC 20120117
Noborio, Masato. "Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits". 京都大学 (Kyoto University), 2009. http://hdl.handle.net/2433/78006.
Texto completo da fonteFontaine, Lya. "Développement de briques technologiques pour la réalisation de composants de puissance MOS sur diamant". Thesis, Toulouse 3, 2020. http://www.theses.fr/2020TOU30060.
Texto completo da fonteOne of the challenges of our time is related to the production and management of electrical energy. In this context, the improvement of power semiconductor devices is one of the keys to meet this challenge. Most of current power devices are made of silicon. However, the demands of power electronics applications in terms of voltage withstand, power density, temperature and switching frequency are becoming higher. The intrinsic physical properties of wide-bandgap semiconductors (SiC, GaN, Diamond) make it possible to consider the design and fabrication of power devices that are much more efficient than all-silicon structures. In this context, our work focuses on the development and optimization of technological steps enabling the realization of diamond MOS power devices. They were carried out as part of the ANR project MOVeToDIAM, coordinated by LAAS-CNRS, in the continuity of the work on diamond made in the laboratory since 2005. Diamond is therefore a wide bandgap semiconductor (Eg = 5.5 eV) particularly suitable for high power and high temperature applications. It has high carrier mobilities (2200cm2/Vs for electrons and 2050cm2/Vs for holes), allowing the passage of high current densities, a high breaking field (Ec ~ 10 MV/cm) and a strong thermal conductivity (lambda ~ 20 W.cm-1.K-1) facilitating heat dissipation. However, despite these promising properties, many technological locks are still to be lifted in order to lead to the fabrication of power devices on diamond. We have therefore studied and optimized several critical technological steps to overcome the problems caused by the small sample size (2x2mm2 to 3x3mm2). The photolithography steps were developed and optimized for two types of resin (positive AZ4999 and negative NLOF 203) using a Spray-Coater and a direct laser writing machine, thus greatly improving the minimal resolution, up to 1 µm, of the patterns defined on the samples. In order to characterize ohmic contacts, we have developed two test structures: the Transmission Line Method (TLM) and the Circular TLM (Circular Transmission Line Method). If the realization of ohmic contacts on P-type diamond is mastered, the specific contact resistance must be further improved to limit its impact on the electrical performance of the devices. In addition, according to the literature, no ohmic contact has been made on N-type diamond, because of the difficulty of achieving high levels of doping, which remains a major obstacle to the development of the diamond industry. The fabrication of ohmic contacts on P-type and N-type diamond has been optimized on different samples.[...]
Pace, Bedetti Horacio Martin. "The effect of "Postural Freedom" in laparoscopic surgery". Doctoral thesis, Universitat Politècnica de València, 2019. http://hdl.handle.net/10251/122312.
Texto completo da fonte[CAT] La cirurgia laparoscòpia està considerada un dels principals avanços quirúrgics en les últimes dècades. Aquesta tècnica ha demostrat nombrosos avantatges comparats amb la cirurgia convencional oberta i ha sigut extensament usada per a processos quirúrgics en l'àrea abdominal. Per al pacient, la cirurgia laparoscòpica suposa diversos avantatges, com per exemple menor dolor post operatiu, temps de recuperació menors, menor risc d'infecció, o reducció del trauma. Per al cirurgià en canvi, la situació és completament diferent, aquesta pràctica requereix major esforç, concentració i estrés mental que la pràctica convencional oberta. A més força al cirurgià a adoptar posicions no-neutres en falanges, mans, nines, i braços. Aquestes postures no-neutres són la principal causa de fatiga muscular i augmenten el risc de problemes musculo-esquelètics. Aquests problemes han sigut àmpliament estudiats per diferents equips d'investigació, els quals estan tractant de millorar l'experiència del cirurgià en el quiròfan. L'enfocament utilitzat en aquest estudi és diferent de l'utilitzat anteriorment per la majoria d'aquests equips, els quals solen proposes solucions basades en canvis ergonòmics amb la intenció de millorar la geometria del mànec de pistola convencional, ja que es considera ergonòmicament deficient. El problema amb aquest enfocament, és que les deficiències no es troben únicament en el mànec, sinó en la utilització d'un punt d'entrada fix que força als cirurgians a mantindre posicions desfavorables. En aquest treball, s'introdueix el concepte "Llibertat Postural" en l'àmbit de la cirurgia, aquest es basa en la hipòtesi que, si les eines no forçaren la posició dels cirurgians, aquests mantindrien posicions més favorables i pròximes al rang de posicions neutres durant els processos laparoscòpics. Els beneficis d'aquest concepte han sigut demostrats per mitjà d'anàlisi de moviment i de electromiografía de superfície, els quals indiquen que la "Llibertat Postural" és causant d'un clar augment de les posicions neutres i de la reducció de la fatiga muscular, i han sigut testats per cirurgians en entorns simulats, els quals troben beneficiós utilitzar la "Llibertat Postural" com a característica base d'aquest nou disseny d'eina laparoscòpica. En la secció final d'aquest treball es proposa un disseny que implementa el concepte de llibertat postura amb el qual es reduiria la fatiga muscular i els problemes *musculo esquelètics associats a la pràctica laparoscòpica. Aquest disseny té la característica d'actuar com una nova secció del braç, sent una articulació que suporta els girs i grans desplaçaments que normalment han de desenvolupar els braços del cirurgià. A més, aquesta solució és econòmica i fàcil de fabricar, la qual cosa permetria el seu ús per cirurgians de tot el món.
[EN] Laparoscopic surgery is considered one of the main surgical advances in the last decades, this technique has demonstrated numerous advantages compared to open conventional surgery and it is widely used in abdominal procedures around the world. For the patient, laparoscopic surgery suppose less post-operative pain, shorter recovery time, lower risk of infection, and reduction of the trauma among other benefits. For the surgeon, the situation is completely different, this practice requires more effort, concentration and mental stress than conventional open procedures. It forces the surgeon to adopt non-neutral postures with phalanges, hands, wrists, and arms being this non-neutral postures the main cause of muscular fatigue and high risk of musculoskeletal disorders. The poor ergonomic postures accelerate muscle fatigue and pain because, outside the neutral range, muscles require more energy to generate the same contractile force than in neutral position. This increase of muscular fatigue is associated with the potential to commit errors that may harm the patient during the surgery. Because this problem is widely studied and different research centers are already trying to improve their surgeons experience in the operation room, the approach used during this work is different than most of the ones presented in previous works. Generally, the solutions proposed are based on ergonomic changes in the handle shape of the instrument, because the conventional pistol-grip handle is considered ergonomically poor. But the problem is not only in the shape of the handle but also in the fixed point of entrance that force the positions for the surgeon despite the handle¿s shape. In this work, the concept of postural freedom in laparoscopic surgery is introduced and evaluated. The postural freedom concept is based on the hypothesis that the surgeon involuntarily would maintain neutral postures if the instrument does not force him or her to reach extreme position with the upper limbs. The benefits of this concept has been demonstrated, by means of electromyography and motion capture. It reduces the localized muscular fatigue and increases the number of neutral postures during laparoscopic simulations. In the final section it is proposed a design that implements the postural freedom concept with, according on the results, the potential to reduce the localized muscular fatigue and the musculoskeletal problems associated to the practice. The design proposed here acts as a new section on the arm, being an articulation that support the turns and big displacements that currently suffer the surgeon¿s body. The solution is affordable and easy to manufacture and could be used by surgeons worldwide.
Pace Bedetti, HM. (2019). The effect of "Postural Freedom" in laparoscopic surgery [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/122312
TESIS
Livros sobre o assunto "MIS devices"
Esposito, Peter M. Sean mis discipulos. Cincinnati, Ohio: RCL Benziger, 2014.
Encontre o texto completo da fonteFranke, Jörg, ed. Three-Dimensional Molded Interconnect Devices (3D-MID). München: Carl Hanser Verlag GmbH & Co. KG, 2014. http://dx.doi.org/10.3139/9781569905524.
Texto completo da fonteZheng, L. Electroluminescence of mid-infrared III-V devices. Manchester: UMIST, 1997.
Encontre o texto completo da fonteFranke, Jörg. Three-Dimensional Molded Interconnect Devices (3D-MID). München, Germany: Carl Hanser Verlag GmbH & Co. KG, 2014. http://dx.doi.org/10.1007/978-1-56990-552-4.
Texto completo da fonteKawasaki, Tōru, Takeo Nakagawa e Tetsuo Yumoto. MID (shashutsu seikei kairo buhin). Tōkyō: Shīemushī, 1997.
Encontre o texto completo da fonteNiederhuber, John E. Totally Implantable Venous Access Devices: Management in Mid- and Long-term Clinical Setting. Milano: Springer Milan, 2012.
Encontre o texto completo da fonteInternational Workshop on Advanced Motion Control (4th 1996 Mie University). AMC '96-Mie: 1996 4th International Workshop on Advanced Motion Control : proceedings, March 18-21, 1996, Mie University, Tsu-City, Mie-Pref., Japan. [New York]: Institute of Electrical and Electronics Engineers, 1996.
Encontre o texto completo da fonteJörg, Franke. Three-dimensional molded interconnect devices (3D-MID): Materials, manufacturing, assembly, and applications for injection molded circuit carriers. Munich: Hanser Publishers, 2014.
Encontre o texto completo da fonteSturdivant, Rick. Microwave and millimeter-wave electronic packaging. Boston: Artech House, 2014.
Encontre o texto completo da fonteDitzian, Jan L. MCS 2 database embedded training: Procedural findings for command and control systems. Alexandria, VA: U.S. Army Research Institute for the Behavioral and Social Sciences, 1989.
Encontre o texto completo da fonteCapítulos de livros sobre o assunto "MIS devices"
Lee-Ong, Alembert, e Alfred Allen Buenafe. "Instrumentations and Access Devices". In Mastering Endo-Laparoscopic and Thoracoscopic Surgery, 51–59. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-3755-2_9.
Texto completo da fonteFaraz, Ali, e Shahram Payandeh. "Automated Devices". In Engineering Approaches to Mechanical and Robotic Design for Minimally Invasive Surgery (MIS), 57–71. Boston, MA: Springer US, 2000. http://dx.doi.org/10.1007/978-1-4615-4409-8_4.
Texto completo da fonteLile, Derek L. "Interfacial Constraints on III-V Compound MIS Devices". In Physics and Chemistry of III-V Compound Semiconductor Interfaces, 327–401. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4684-4835-1_6.
Texto completo da fonteLandi, Alessandro, Fabrizio Gregori, Nicola Marotta e Roberto Delfini. "New Techniques and MIS: The Interspinous Fixation Devices". In Modern Thoraco-Lumbar Implants for Spinal Fusion, 127–42. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-60143-4_11.
Texto completo da fonteMabrook, Mohammed Fadhil, Daniel Kolb, Christopher Pearson, D. A. Zeze e M. C. Petty. "Fabrication and Characterisation of MIS Organic Memory Devices". In Advances in Science and Technology, 474–79. Stafa: Trans Tech Publications Ltd., 2008. http://dx.doi.org/10.4028/3-908158-11-7.474.
Texto completo da fonteBurroughes, J. H., e R. H. Friend. "Field-Induced Charges in Polyacetylene MIS and MISFET Devices". In New Horizons in Low-Dimensional Electron Systems, 377–400. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-3190-2_25.
Texto completo da fonteLawenko, Michael M., e Angelica Feliz Versoza-Delgado. "Image Systems in Endo-Laparoscopic Surgery". In Mastering Endo-Laparoscopic and Thoracoscopic Surgery, 7–14. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-3755-2_2.
Texto completo da fonteSlacheva, G., e I. Yanchev. "Path-Integral Calculation of the Electron Density of States in Mis-Structures". In Devices Based on Low-Dimensional Semiconductor Structures, 189–98. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-0289-3_14.
Texto completo da fonteTralle, I. E. "Dynamic Quantum Wells and Quantum Dots in Mis-Microstructure with Periodic Field Electrodes". In Frontiers in Nanoscale Science of Micron/Submicron Devices, 495–505. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-1778-1_35.
Texto completo da fonteLee-Ong, Alembert, e Alfred Allen Buenafe. "Operating Room Setup and Patient Positioning in MIS". In Mastering Endo-Laparoscopic and Thoracoscopic Surgery, 61–67. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-3755-2_10.
Texto completo da fonteTrabalhos de conferências sobre o assunto "MIS devices"
Alba-Martin, M., T. Firmager, J. J. Atherton, M. C. Rosamond, A. J. Gallant, M. C. Petty, A. Al Ghaferi et al. "Single-walled nanotube MIS memory devices". In 2011 IEEE 11th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2011. http://dx.doi.org/10.1109/nano.2011.6144530.
Texto completo da fonteMiranda, E. "Failure analysis of MIM and MIS structures using spatial statistics". In 2013 Spanish Conference on Electron Devices (CDE). IEEE, 2013. http://dx.doi.org/10.1109/cde.2013.6481384.
Texto completo da fonteVaquero-Melchor, Diego, Jorge García-Hospital, Ana M. Bernardos, Juan A. Besada e José R. Casar. "Holo-mis". In MobileHCI '18: 20th International Conference on Human-Computer Interaction with Mobile Devices and Services. New York, NY, USA: ACM, 2018. http://dx.doi.org/10.1145/3236112.3236165.
Texto completo da fonteMaeda, Narihiko, Masanobu Hiroki, Noriyuki Watanabe, Yasuhiro Oda, Haruki Yokoyama, Takuma Yagi, Toshiki Makimoto, Takatomo Enoki e Takashi Kobayashi. "Insulator engineering in GaN-based MIS HFETs". In Integrated Optoelectronic Devices 2007, editado por Hadis Morkoc e Cole W. Litton. SPIE, 2007. http://dx.doi.org/10.1117/12.703659.
Texto completo da fonteRziga, Faten Ouaja, Khaoula Mbarek, Sami Ghedira e Kamel Besbes. "A general overview of memristor devices". In 2017 International Conference on Engineering & MIS (ICEMIS). IEEE, 2017. http://dx.doi.org/10.1109/icemis.2017.8273019.
Texto completo da fonteMbarek, Khaoula, Faten Ouaja Rziga, Sami Ghedira e Kamel Besbes. "Characterization, and modeling of memristor devices". In 2017 International Conference on Engineering & MIS (ICEMIS). IEEE, 2017. http://dx.doi.org/10.1109/icemis.2017.8273032.
Texto completo da fonteKorolevych, Lyubomyr, e Alexander Borisov. "Cerium dioxide thin films in silicon MIS devices". In 2019 IEEE 39th International Conference on Electronics and Nanotechnology (ELNANO). IEEE, 2019. http://dx.doi.org/10.1109/elnano.2019.8783344.
Texto completo da fonteMarino, Fabio Alessio, Davide Bisi, Matteo Meneghini, Giovanni Verzellesi, Enrico Zanoni, Marleen Van Hove, Shuzhen You et al. "Breakdown investigation in GaN-based MIS-HEMT devices". In ESSDERC 2014 - 44th European Solid State Device Research Conference. IEEE, 2014. http://dx.doi.org/10.1109/essderc.2014.6948839.
Texto completo da fonteLee, Tae-Seok, Y. T. Jeoung, Hyun Kyu Kim, Jae Mook Kim, Jinhan Song, S. Y. Ann, Ji Y. Lee et al. "Electrical properties of MIS devices on CdZnTe/HgCdTe". In SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, editado por Bjorn F. Andresen e Marija Strojnik. SPIE, 1998. http://dx.doi.org/10.1117/12.328083.
Texto completo da fonteRawal, Yaksh, Prashanth P. Manik, Piyush Bhatt, Anoop C., Saurabh Lodha, Swaroop Ganguly, Maryam Shojaei Baghini e Debashree Burman. "Performance comparison of MIM and MIS diodes for energy harvesting applications". In 2014 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). IEEE, 2014. http://dx.doi.org/10.1109/edssc.2014.7061102.
Texto completo da fonteRelatórios de organizações sobre o assunto "MIS devices"
Robinson, Dr Peter. PR761-235100-R01 Minimally Intrusive Multi Sensor for Inline Deployment. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), julho de 2024. http://dx.doi.org/10.55274/r0000075.
Texto completo da fonteChannabasappa, S., W. De Ketelaere e E. Nechamkin. Management Event Management Information Base (MIB) for PacketCable- and IPCablecom-Compliant Devices. RFC Editor, abril de 2009. http://dx.doi.org/10.17487/rfc5428.
Texto completo da fonteByer, Robert L. Diffusion-Bonded Nonlinear Materials for Practical Quasi-Phase-Matched Mid-IR Devices. Fort Belvoir, VA: Defense Technical Information Center, abril de 1996. http://dx.doi.org/10.21236/ada307177.
Texto completo da fonteFitzgerald, Eugene A. Device Quality, High Mis-Matched Semi Conductor Materials Grown on Si Substrates Using Unique Dislocation Engineering. Fort Belvoir, VA: Defense Technical Information Center, junho de 2002. http://dx.doi.org/10.21236/ada414436.
Texto completo da fonteSt., M., ed. DOCSIS Cable Device MIB Cable Device Management Information Base for DOCSIS compliant Cable Modems and Cable Modem Termination Systems. RFC Editor, agosto de 1999. http://dx.doi.org/10.17487/rfc2669.
Texto completo da fonteCALS TEST NETWORK WRIGHT-PATTERSON AFB OH. Technical IGES Transfer Using: Computing Devices' Data. MIL-D-28000A (IGES). Quick Short Test Report. Fort Belvoir, VA: Defense Technical Information Center, novembro de 1993. http://dx.doi.org/10.21236/ada312857.
Texto completo da fonteCALS TEST NETWORK WRIGHT-PATTERSON AFB OH. Technical Illustration Transfer Using: Computing Devices Canada's Data MIL-D-28OOOA (IGES) Quick Short Test Report. Fort Belvoir, VA: Defense Technical Information Center, março de 1994. http://dx.doi.org/10.21236/ada312354.
Texto completo da fonteBIZIKOEVA, L. S., e M. I. BALIKOEVA. SOMERSET MAUGHAM - MASTER OF CREATING CHARACTERS. Science and Innovation Center Publishing House, 2021. http://dx.doi.org/10.12731/2077-1770-2021-13-4-2-111-121.
Texto completo da fonteZanker. L52361 Smart USM Diagnostics - Phase I. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), abril de 2007. http://dx.doi.org/10.55274/r0010938.
Texto completo da fonteDeSantis, John, e Jeffery Roesler. Performance Evaluation of Stabilized Support Layers for Concrete Pavements. Illinois Center for Transportation, fevereiro de 2022. http://dx.doi.org/10.36501/0197-9191/22-003.
Texto completo da fonte