Literatura científica selecionada sobre o tema "Mg-Dopant"
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Artigos de revistas sobre o assunto "Mg-Dopant"
Yamashita, Yoshiyuki, Jingmin Tang, Yusuke Hashimote e Tomohiro Matsushita. "Atomic Structures and Chemical states of active and inactive dopants in GaN". ECS Transactions 112, n.º 2 (29 de setembro de 2023): 67–75. http://dx.doi.org/10.1149/11202.0067ecst.
Texto completo da fonteSiladie, Alexandra-Madalina, Lynda Amichi, Nicolas Mollard, Isabelle Mouton, Bastien Bonef, Catherine Bougerol, Adeline Grenier et al. "Dopant radial inhomogeneity in Mg-doped GaN nanowires". Nanotechnology 29, n.º 25 (25 de abril de 2018): 255706. http://dx.doi.org/10.1088/1361-6528/aabbd6.
Texto completo da fonteHuang, Xiaopeng, Feng Liang, Yuanchao Du, Keyu Zhang, Yaochun Yao e Yongnian Dai. "Optimization of the Process Parameters for the Synthesis of LiFe1−x−yMgxTiyPO4/C Cathode Material Using Response Surface Methodology". Nano 11, n.º 11 (20 de outubro de 2016): 1650122. http://dx.doi.org/10.1142/s1793292016501228.
Texto completo da fonteSchmidt, Th, M. Siebert, J. I. Flege, S. Figge, S. Gangopadhyay, A. Pretorius, T. L. Lee et al. "Mg and Si dopant incorporation and segregation in GaN". physica status solidi (b) 248, n.º 8 (7 de março de 2011): 1810–21. http://dx.doi.org/10.1002/pssb.201046531.
Texto completo da fonteWinda Rahmalia, Intan Syahbanu, Nurlina, Ayu Widya Sari e Septiani. "Synthesis of Mg-doped TiO2 Using a Hydrothermal Method as Photoanode on Bixin-Sensitized Solar Cell". Jurnal Riset Kimia 14, n.º 2 (17 de outubro de 2023): 198–208. http://dx.doi.org/10.25077/jrk.v14i2.622.
Texto completo da fonteKushwaha, Amanendra K., Manoranjan Misra e Pradeep L. Menezes. "Effect of Magnesium Dopant on the Grain Boundary Stability of Nanocrystalline Aluminum Powders during Cryomilling". Crystals 13, n.º 3 (21 de março de 2023): 541. http://dx.doi.org/10.3390/cryst13030541.
Texto completo da fonteAhmed, Duha S., Noor Q. Ali e Ali A. Taha. "The Variation Effect of Mg-doped NPs Prepared by Sol-Gel Method on its Structural Properties and Biological Activities". Journal of Physics: Conference Series 2114, n.º 1 (1 de dezembro de 2021): 012004. http://dx.doi.org/10.1088/1742-6596/2114/1/012004.
Texto completo da fonteLi, Jinchai, e Junyong Kang. "Band engineering in Al0.5Ga0.5N∕GaN superlattice by modulating Mg dopant". Applied Physics Letters 91, n.º 15 (8 de outubro de 2007): 152106. http://dx.doi.org/10.1063/1.2798589.
Texto completo da fonteGrillot, P. N., S. A. Stockman, J. W. Huang e Y. L. Chang. "Dopant interactions and Mg segregation in (AlxGa1−x)0.5In0.5P heterostructures". Physica B: Condensed Matter 308-310 (dezembro de 2001): 888–90. http://dx.doi.org/10.1016/s0921-4526(01)00950-4.
Texto completo da fonteJain, P., J. Lang, N. Y. Skryabina, D. Fruchart, S. F. Santos, K. Binder, T. Klassen e J. Huot. "MgH2 as dopant for improved activation of commercial Mg ingot". Journal of Alloys and Compounds 575 (outubro de 2013): 364–69. http://dx.doi.org/10.1016/j.jallcom.2013.05.099.
Texto completo da fonteTeses / dissertações sobre o assunto "Mg-Dopant"
Mballo, Adama. "Détecteurs de neutrons à base de nitrure de bore et ses alliages". Electronic Thesis or Diss., Université de Lorraine, 2021. http://www.theses.fr/2021LORR0236.
Texto completo da fonteNeutron detectors play a crucial role in various applications such as homeland security (airports, borders and ports) to control illegal activities involving nuclear materials, nuclear power plants for neutron radiation safety and monitoring, high energy physics and nuclear science. In addition, recent events such as the Fukushima explosion and the polonium poisoning have stimulated interest in the development of small, portable and low-cost solid-state neutron detectors (SSND). To achieve high efficiency in SSND factors such as neutron absorption and charge collection are critical.The general objective of this work is to develop efficient solid-state thermal neutron detectors based on boron containing III-nitride materials such as boron nitride (BN) and boron-gallium nitride (BGaN). Boron in these materials is very important for the detection of thermal neutrons due to the high neutron capture cross section of the isotope boron-10 (10B) and its low sensitivity to gamma radiation. However, the main challenge with boron containing III-N for neutron detection is the quality of the materials. For instance, growth of thick, high quality single crystalline boron-rich BGaN needed for neutron detectors is difficult due to strain-induced degradations such as phase separation and columnar 3D growth. Therefore, we developed an innovative approach consisting of BGaN/GaN superlattices (SLs) with a nominal boron content of 3% in the BGaN layer. These BGaN/GaN SLs materials were used to fabricate metal-semiconductor-metal (MSM) and p-i-n heterojunction devices, which showed significant neutron-induced signal. Even with this approach, it is found that there are several constraints on the boron content, the quality of the material, and the overall thickness, which are key factors for the realization of high-efficiency neutron detectors.By using binary BN (100% boron) epitaxial layers, higher thermal neutron absorption and performance of neutron detectors are expected. Our group has reported for the first time large area 2D layered h-BN films with high crystalline quality on sapphire substrate by metal organic vapor phase epitaxy (MOVPE). These BN films were used to demonstrate high efficiency deep UV photodetectors. In this work, we have grown up to 2.5µm thick natural and 10B enriched BN samples and used them to fabricate MSM based detectors. The advantages of MSM structures are the ability to achieve self-powered operation, similar to that demonstrated for UV photodetectors, and to benefit from internal gain in order to increase the neutron signal.This work also aims to investigate the control of the electrical conductivity of h-BN by in-situ Mg doping for the future realization of p-n based BN neutron detectors. Since a high boron content is highly desirable for neutron detectors, we have further explored experimentally for the first time a new material: boron-rich BAlN alloys
Capítulos de livros sobre o assunto "Mg-Dopant"
C.A. Silva, Anielle, Eliete A. Alvin, Francisco R.A. dos Santos, Samanta L.M. de Matos, Jerusa M. de Oliveira, Alessandra S. Silva, Éder V. Guimarães et al. "Doped Semiconductor Nanocrystals: Development and Applications". In Nanocrystals [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.96753.
Texto completo da fonteGanas, George, George Karagiannakis, Aitor Eguia-Barrio, Miguel Bengoechea, Iratxe de Meatza e Georgia Kastrinaki. "Aerosol Spray Pyrolysis Synthesis of Doped LiNi0.5Mn1.5O4 Cathode Materials for Next Generation Lithium-Ion Batteries". In Recent Perspectives in Pyrolysis Research. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.100406.
Texto completo da fonteTrabalhos de conferências sobre o assunto "Mg-Dopant"
Yamoah, Nana Kwame, Timothy Moses e Dhananjay Kumar. "Corrosion Behavior of Tricalcium Phosphate Doped With Different Compositions of Silver". In ASME 2015 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2015. http://dx.doi.org/10.1115/imece2015-51748.
Texto completo da fonteFouchier, Marc, Christian Monachon e Matthew Davies. "GaN Epitaxial Defects Characterization Using Cathodoluminescence Spectroscopy". In ISTFA 2023. ASM International, 2023. http://dx.doi.org/10.31399/asm.cp.istfa2023p0463.
Texto completo da fonteRitonga, Wahyu Azhar, Timbangen Sembiring, Muhammad Zaini Afdlan, Kerista Sebayang, Susilawati, Hariyati Lubis, Agung Imaduddin, Hilda Ayu Marlina e Cindy Alkindi. "Effect of dopant on superconductor Bi1.6Pb0.4Sr2Ca2-x MxCu3Oy (M = Ce, Na, Mg) phase 2223 by solid method". In THE 1ST INTERNATIONAL CONFERENCE ON PHYSICS AND APPLIED PHYSICS (THE 1ST ICP&AP) 2019: Fundamental and Innovative Research for Improving Competitive Dignified Nation and Industrial Revolution 4.0. AIP Publishing, 2020. http://dx.doi.org/10.1063/5.0003934.
Texto completo da fonteAleksandrovski, A. L., e I. I. Naumova. "Bulk crystals of ferroelectric niobates with periodic domain pattern". In The European Conference on Lasers and Electro-Optics. Washington, D.C.: Optica Publishing Group, 1994. http://dx.doi.org/10.1364/cleo_europe.1994.cwf49.
Texto completo da fonteFen, Tang Xiao, Ari Legowo, Ali Shaitir e Agus Geter Edy Sutjipto. "Study on the Effect of Mg Dopant on the Properties of ZnO Thin Film Prepared by Sol Gel". In 2019 Advances in Science and Engineering Technology International Conferences (ASET). IEEE, 2019. http://dx.doi.org/10.1109/icaset.2019.8714394.
Texto completo da fonteMalek, M. F., M. Alfah, Z. Khusaimi, M. H. Mamat, M. Z. Sahdan, M. Rusop, Mohamad Rusop e Tetsuo Soga. "Effect of Mg Dopant Percentage on the Photoluminescence Property of Nano-Structured ZnO Thin Films Deposited on Si Substrate". In NANOSCIENCE AND NANOTECHNOLOGY: International Conference on Nanoscience and Nanotechnology—2008. AIP, 2009. http://dx.doi.org/10.1063/1.3160218.
Texto completo da fonteChoi, Ju H., Frank G. Shi, Alfred A. Margaryan, Ashot Margaryan e T. G. Nieh. "Dopant and concentration dependence of linear and nonlinear refractive index and dispersion for new (Mg, Ba)F 2 based fluorophosphates glass". In High-Power Lasers and Applications, editado por Yehoshua Y. Kalisky. SPIE, 2003. http://dx.doi.org/10.1117/12.479168.
Texto completo da fonte