Artigos de revistas sobre o tema "Metal-Insulator Transition devices"
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Lee, D., B. Chung, Y. Shi, G. Y. Kim, N. Campbell, F. Xue, K. Song et al. "Isostructural metal-insulator transition in VO2". Science 362, n.º 6418 (29 de novembro de 2018): 1037–40. http://dx.doi.org/10.1126/science.aam9189.
Texto completo da fonteLi, Dasheng, Jonathan M. Goodwill, James A. Bain e Marek Skowronski. "Scaling behavior of oxide-based electrothermal threshold switching devices". Nanoscale 9, n.º 37 (2017): 14139–48. http://dx.doi.org/10.1039/c7nr03865h.
Texto completo da fonteWang, Qi, Kai Liang Zhang, Fang Wang, Kai Song e Zhi Xiang Hu. "Investigation on the Electric-Field-Induced Metal-Insulator Transition in VoX-Based Devices". Applied Mechanics and Materials 130-134 (outubro de 2011): 1–4. http://dx.doi.org/10.4028/www.scientific.net/amm.130-134.1.
Texto completo da fontePolak, Paweł, Jan Jamroz e Tomasz K. Pietrzak. "Observation of Metal–Insulator Transition (MIT) in Vanadium Oxides V2O3 and VO2 in XRD, DSC and DC Experiments". Crystals 13, n.º 9 (23 de agosto de 2023): 1299. http://dx.doi.org/10.3390/cryst13091299.
Texto completo da fonteCheng, Shaobo, Min-Han Lee, Richard Tran, Yin Shi, Xing Li, Henry Navarro, Coline Adda et al. "Inherent stochasticity during insulator–metal transition in VO2". Proceedings of the National Academy of Sciences 118, n.º 37 (7 de setembro de 2021): e2105895118. http://dx.doi.org/10.1073/pnas.2105895118.
Texto completo da fonteHong, Woong-Ki, SeungNam Cha, Jung Inn Sohn e Jong Min Kim. "Metal-Insulator Phase Transition in Quasi-One-Dimensional VO2Structures". Journal of Nanomaterials 2015 (2015): 1–15. http://dx.doi.org/10.1155/2015/538954.
Texto completo da fonteWei, Na, Xiang Ding, Shifan Gao, Wenhao Wu e Yi Zhao. "HfOx/Ge RRAM with High ON/OFF Ratio and Good Endurance". Electronics 11, n.º 22 (20 de novembro de 2022): 3820. http://dx.doi.org/10.3390/electronics11223820.
Texto completo da fonteHuang, Tiantian, Rui Zhang, Lepeng Zhang, Peiran Xu, Yunkai Shao, Wanli Yang, Zhimin Chen, Xin Chen e Ning Dai. "Energy-adaptive resistive switching with controllable thresholds in insulator–metal transition". RSC Advances 12, n.º 55 (2022): 35579–86. http://dx.doi.org/10.1039/d2ra06866d.
Texto completo da fonteWeidemann, Sebastian, Mark Kremer, Stefano Longhi e Alexander Szameit. "Topological triple phase transition in non-Hermitian Floquet quasicrystals". Nature 601, n.º 7893 (19 de janeiro de 2022): 354–59. http://dx.doi.org/10.1038/s41586-021-04253-0.
Texto completo da fonteHeo, Jinseong, Heejeong Jeong, Yeonchoo Cho, Jaeho Lee, Kiyoung Lee, Seunggeol Nam, Eun-Kyu Lee et al. "Reconfigurable van der Waals Heterostructured Devices with Metal–Insulator Transition". Nano Letters 16, n.º 11 (5 de outubro de 2016): 6746–54. http://dx.doi.org/10.1021/acs.nanolett.6b02199.
Texto completo da fonteMcGee, Ryan, Ankur Goswami, Rosmi Abraham, Syed Bukhari e Thomas Thundat. "Phase transformation induced modulation of the resonance frequency of VO2/tio2 coated microcantilevers". MRS Advances 3, n.º 6-7 (2018): 359–64. http://dx.doi.org/10.1557/adv.2018.140.
Texto completo da fonteCalhoun, Seth, Rachel Evans, Cameron Nickle, Isaiah O. Oladeji, Justin Cleary, Evan M. Smith, Sayan Chandra, Debashis Chanda e Robert E. Peale. "Vanadium Oxide Thin Film by Aqueous Spray Deposition". MRS Advances 3, n.º 45-46 (2018): 2777–82. http://dx.doi.org/10.1557/adv.2018.512.
Texto completo da fonteMa, Chung T., Salinporn Kittiwatanakul, Apiprach Sittipongpittaya, Yuhan Wang, Md Golam Morshed, Avik W. Ghosh e S. Joseph Poon. "Phase Change-Induced Magnetic Switching through Metal–Insulator Transition in VO2/TbFeCo Films". Nanomaterials 13, n.º 21 (27 de outubro de 2023): 2848. http://dx.doi.org/10.3390/nano13212848.
Texto completo da fonteWalls, Brian, Oisín Murtagh, Sergey I. Bozhko, Andrei Ionov, Andrey A. Mazilkin, Daragh Mullarkey, Ainur Zhussupbekova et al. "VOx Phase Mixture of Reduced Single Crystalline V2O5: VO2 Resistive Switching". Materials 15, n.º 21 (31 de outubro de 2022): 7652. http://dx.doi.org/10.3390/ma15217652.
Texto completo da fonteKwon, Osung, Hongmin Lee e Sungjun Kim. "Effects of Oxygen Flow Rate on Metal-to-Insulator Transition Characteristics in NbOx-Based Selectors". Materials 15, n.º 23 (1 de dezembro de 2022): 8575. http://dx.doi.org/10.3390/ma15238575.
Texto completo da fonteDruzhinin, Anatoly, Igor Ostrovskii, Yuriy Khoverko e Sergij Yatsukhnenko. "Magnetic Properties of Doped Si<B,Ni> Whiskers for Spintronics". Journal of Nano Research 39 (fevereiro de 2016): 43–54. http://dx.doi.org/10.4028/www.scientific.net/jnanor.39.43.
Texto completo da fonteXu, Zhen, Ayrton A. Bernussi e Zhaoyang Fan. "Voltage Pulse Driven VO2 Volatile Resistive Transition Devices as Leaky Integrate-and-Fire Artificial Neurons". Electronics 11, n.º 4 (9 de fevereiro de 2022): 516. http://dx.doi.org/10.3390/electronics11040516.
Texto completo da fonteParihar, Abhinav, Nikhil Shukla, Matthew Jerry, Suman Datta e Arijit Raychowdhury. "Computing with dynamical systems based on insulator-metal-transition oscillators". Nanophotonics 6, n.º 3 (19 de abril de 2017): 601–11. http://dx.doi.org/10.1515/nanoph-2016-0144.
Texto completo da fonteLu, Chang, Qingjian Lu, Min Gao e Yuan Lin. "Dynamic Manipulation of THz Waves Enabled by Phase-Transition VO2 Thin Film". Nanomaterials 11, n.º 1 (6 de janeiro de 2021): 114. http://dx.doi.org/10.3390/nano11010114.
Texto completo da fonteGim, Hyeongyu, e Kootak Hong. "Nonvolatile Control of Metal-Insulator Transition in VO2 and Its Applications". Ceramist 26, n.º 1 (31 de março de 2023): 3–16. http://dx.doi.org/10.31613/ceramist.2023.26.1.01.
Texto completo da fonteWei, Guodong, Xiaofei Fan, Yiang Xiong, Chen Lv, Shen Li e Xiaoyang Lin. "Highly disordered VO2 films: appearance of electronic glass transition and potential for device-level overheat protection". Applied Physics Express 15, n.º 4 (1 de abril de 2022): 043002. http://dx.doi.org/10.35848/1882-0786/ac605d.
Texto completo da fonteLin, Jianqiang, Shriram Ramanathan e Supratik Guha. "Electrically Driven Insulator–Metal Transition-Based Devices—Part II: Transient Characteristics". IEEE Transactions on Electron Devices 65, n.º 9 (setembro de 2018): 3989–95. http://dx.doi.org/10.1109/ted.2018.2859188.
Texto completo da fonteLi, Dasheng, Abhishek A. Sharma, Darshil K. Gala, Nikhil Shukla, Hanjong Paik, Suman Datta, Darrell G. Schlom, James A. Bain e Marek Skowronski. "Joule Heating-Induced Metal–Insulator Transition in Epitaxial VO2/TiO2 Devices". ACS Applied Materials & Interfaces 8, n.º 20 (10 de maio de 2016): 12908–14. http://dx.doi.org/10.1021/acsami.6b03501.
Texto completo da fonteMakino, Kotaro, Kosaku Kato, Yuta Saito, Paul Fons, Alexander V. Kolobov, Junji Tominaga, Takashi Nakano e Makoto Nakajima. "Terahertz spectroscopic characterization of Ge2Sb2Te5 phase change materials for photonics applications". Journal of Materials Chemistry C 7, n.º 27 (2019): 8209–15. http://dx.doi.org/10.1039/c9tc01456j.
Texto completo da fonteGarcía, Héctor, Jonathan Boo, Guillermo Vinuesa, Óscar G. Ossorio, Benjamín Sahelices, Salvador Dueñas, Helena Castán, Mireia B. González e Francesca Campabadal. "Influences of the Temperature on the Electrical Properties of HfO2-Based Resistive Switching Devices". Electronics 10, n.º 22 (17 de novembro de 2021): 2816. http://dx.doi.org/10.3390/electronics10222816.
Texto completo da fonteDarwish, Mahmoud, e László Pohl. "Insulator Metal Transition-Based Selector in Crossbar Memory Arrays". Electronic Materials 5, n.º 1 (23 de fevereiro de 2024): 17–29. http://dx.doi.org/10.3390/electronicmat5010002.
Texto completo da fonteLee, Su Yeon, Hyun Kyu Seo, Se Yeon Jeong e Min Kyu Yang. "Improved Electrical Characteristics of Field Effect Transistors with GeSeTe-Based Ovonic Threshold Switching Devices". Materials 16, n.º 12 (11 de junho de 2023): 4315. http://dx.doi.org/10.3390/ma16124315.
Texto completo da fonteCardarilli, Gian Carlo, Gaurav Mani Khanal, Luca Di Nunzio, Marco Re, Rocco Fazzolari e Raj Kumar. "Memristive and Memory Impedance Behavior in a Photo-Annealed ZnO–rGO Thin-Film Device". Electronics 9, n.º 2 (7 de fevereiro de 2020): 287. http://dx.doi.org/10.3390/electronics9020287.
Texto completo da fonteBasyooni, Mohamed A., Mawaheb Al-Dossari, Shrouk E. Zaki, Yasin Ramazan Eker, Mucahit Yilmaz e Mohamed Shaban. "Tuning the Metal–Insulator Transition Properties of VO2 Thin Films with the Synergetic Combination of Oxygen Vacancies, Strain Engineering, and Tungsten Doping". Nanomaterials 12, n.º 9 (26 de abril de 2022): 1470. http://dx.doi.org/10.3390/nano12091470.
Texto completo da fonteZhang, Shenli, Hien Vo e Giulia Galli. "Predicting the Onset of Metal–Insulator Transitions in Transition Metal Oxides—A First Step in Designing Neuromorphic Devices". Chemistry of Materials 33, n.º 9 (20 de abril de 2021): 3187–95. http://dx.doi.org/10.1021/acs.chemmater.1c00061.
Texto completo da fonteKim, Jihoon, Sungwook Choi, Seul-Lee Lee, Do Kyung Kim, Min Seok Kim, Bong-Jun Kim e Yong Wook Lee. "Reversible 100 mA Current Switching in a VO2/Al2O3-Based Two-Terminal Device Using Focused Far-Infrared Laser Pulses". Journal of Nanoscience and Nanotechnology 21, n.º 3 (1 de março de 2021): 1862–68. http://dx.doi.org/10.1166/jnn.2021.18905.
Texto completo da fonteChen, Yiheng, Wen-Ti Guo, Zi-Si Chen, Suyun Wang e Jian-Min Zhang. "First-principles study on the heterostructure of twisted graphene/hexagonal boron nitride/graphene sandwich structure". Journal of Physics: Condensed Matter 34, n.º 12 (7 de janeiro de 2022): 125504. http://dx.doi.org/10.1088/1361-648x/ac45b5.
Texto completo da fonteShin, Jaemin, Tyafur Pathan, Guanyu Zhou e Christopher L. Hinkle. "(Invited) Bulk Traps in Layered 2D Gate Dielectrics". ECS Transactions 113, n.º 2 (17 de maio de 2024): 25–33. http://dx.doi.org/10.1149/11302.0025ecst.
Texto completo da fonteSampaio-Silva, Alessandre, Gervásio Protásio dos Santos Cavalcante, Carlos Alberto B. Silva e Jordan Del Nero. "Design of Molecular Positive Electronic Transition Device". Journal of Computational and Theoretical Nanoscience 18, n.º 6 (1 de junho de 2021): 1714–23. http://dx.doi.org/10.1166/jctn.2021.9729.
Texto completo da fonteSampaio-Silva, Alessandre, Gervásio Protásio dos Santos Cavalcante, Carlos Alberto B. Silva e Jordan Del Nero. "Design of Molecular Positive Electronic Transition Device". Journal of Computational and Theoretical Nanoscience 18, n.º 6 (1 de junho de 2021): 1714–23. http://dx.doi.org/10.1166/jctn.2021.9729.
Texto completo da fonteWang, Peng-Fei, Qianqian Hu, Tan Zheng, Yu Liu, Xiaofeng Xu e Jia-Lin Sun. "Optically Monitored Electric-Field-Induced Phase Transition in Vanadium Dioxide Crystal Film". Crystals 10, n.º 9 (29 de agosto de 2020): 764. http://dx.doi.org/10.3390/cryst10090764.
Texto completo da fonteMizsei, János, Jyrki Lappalainen e Laszló Pohl. "Active thermal-electronic devices based on heat-sensitive metal-insulator-transition resistor elements". Sensors and Actuators A: Physical 267 (novembro de 2017): 14–20. http://dx.doi.org/10.1016/j.sna.2017.09.052.
Texto completo da fonteHong, X., A. Posadas e C. H. Ahn. "Examining the screening limit of field effect devices via the metal-insulator transition". Applied Physics Letters 86, n.º 14 (4 de abril de 2005): 142501. http://dx.doi.org/10.1063/1.1897076.
Texto completo da fonteM, Arunachalam, Thamilmaran P e Sakthipandi K. "Effect of Sintering Temperature on Metal-Insulator Phase Transition in La1-xCaxMnO3 Perovskites". Frontiers in Advanced Materials Research 2, n.º 1 (26 de maio de 2020): 37–42. http://dx.doi.org/10.34256/famr2014.
Texto completo da fonteCheng, Shaobo, Min-Han Lee, Xing Li, Lorenzo Fratino, Federico Tesler, Myung-Geun Han, Javier del Valle et al. "Operando characterization of conductive filaments during resistive switching in Mott VO2". Proceedings of the National Academy of Sciences 118, n.º 9 (23 de fevereiro de 2021): e2013676118. http://dx.doi.org/10.1073/pnas.2013676118.
Texto completo da fonteKlein, D. R., D. MacNeill, J. L. Lado, D. Soriano, E. Navarro-Moratalla, K. Watanabe, T. Taniguchi et al. "Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling". Science 360, n.º 6394 (3 de maio de 2018): 1218–22. http://dx.doi.org/10.1126/science.aar3617.
Texto completo da fonteRakshit, Abhishek, Karimul Islam, Anil Kumar Sinha e Supratic Chakraborty. "Insulator-to-metal transition of vanadium oxide-based metal-oxide-semiconductor devices at discrete measuring temperatures". Semiconductor Science and Technology 34, n.º 5 (4 de abril de 2019): 055001. http://dx.doi.org/10.1088/1361-6641/ab07d7.
Texto completo da fonteYu, Wenhao, Luqiu Chen, Yifei Liu, Bobo Tian, Qiuxiang Zhu e Chungang Duan. "Resistive switching polarity reversal due to ferroelectrically induced phase transition at BiFeO3/Ca0.96Ce0.04MnO3 heterostructures". Applied Physics Letters 122, n.º 2 (9 de janeiro de 2023): 022902. http://dx.doi.org/10.1063/5.0132819.
Texto completo da fonteNishikawa, K., S. Takakura, M. Nakatake, M. Yoshimura e Y. Watanabe. "Effect of surface modification by Ar+ ion irradiation on thermal hysteresis of VO2". Journal of Applied Physics 133, n.º 4 (28 de janeiro de 2023): 045305. http://dx.doi.org/10.1063/5.0132957.
Texto completo da fonteZhang, Yanqing, Weiming Xiong, Weijin Chen e Yue Zheng. "Recent Progress on Vanadium Dioxide Nanostructures and Devices: Fabrication, Properties, Applications and Perspectives". Nanomaterials 11, n.º 2 (28 de janeiro de 2021): 338. http://dx.doi.org/10.3390/nano11020338.
Texto completo da fonteRafiq, Fareenpoornima, Parthipan Govindsamy e Selvakumar Periyasamy. "Synthesis of a Novel Nanoparticle BaCoO2.6 through Sol-Gel Method and Elucidation of Its Structure and Electrical Properties". Journal of Nanomaterials 2022 (19 de julho de 2022): 1–15. http://dx.doi.org/10.1155/2022/3877879.
Texto completo da fonteHa, Sieu D., B. Viswanath e Shriram Ramanathan. "Electrothermal actuation of metal-insulator transition in SmNiO3 thin film devices above room temperature". Journal of Applied Physics 111, n.º 12 (15 de junho de 2012): 124501. http://dx.doi.org/10.1063/1.4729490.
Texto completo da fonteYoon, Jongwon, Woong-Ki Hong, Yonghun Kim e Seung-Young Park. "Nanostructured Vanadium Dioxide Materials for Optical Sensing Applications". Sensors 23, n.º 15 (27 de julho de 2023): 6715. http://dx.doi.org/10.3390/s23156715.
Texto completo da fonteRai, R. K., R. B. Ray, G. C. Kaphle e O. P. Niraula. "A Continuous Time Quantum Monte Carlo as an Impurity Solver for Strongly Correlated System". Journal of Nepal Physical Society 7, n.º 3 (31 de dezembro de 2021): 14–26. http://dx.doi.org/10.3126/jnphyssoc.v7i3.42185.
Texto completo da fonteMoon, Jaehyun, Ju-Hun Lee, Kitae Kim, Junho Kim, Soohyung Park, Yeonjin Yi e Seung-Youl Kang. "Threshold Switching of ALD-NbOx Films for Neuromorphic Applications". ECS Meeting Abstracts MA2023-02, n.º 30 (22 de dezembro de 2023): 1558. http://dx.doi.org/10.1149/ma2023-02301558mtgabs.
Texto completo da fonte