Artigos de revistas sobre o tema "Memory transistors"
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Al-shawi, Amjad, Maysoon Alias, Paul Sayers e Mohammed Fadhil Mabrook. "Improved Memory Properties of Graphene Oxide-Based Organic Memory Transistors". Micromachines 10, n.º 10 (25 de setembro de 2019): 643. http://dx.doi.org/10.3390/mi10100643.
Texto completo da fonteXie, Fangqing, Maryna N. Kavalenka, Moritz Röger, Daniel Albrecht, Hendrik Hölscher, Jürgen Leuthold e Thomas Schimmel. "Copper atomic-scale transistors". Beilstein Journal of Nanotechnology 8 (1 de março de 2017): 530–38. http://dx.doi.org/10.3762/bjnano.8.57.
Texto completo da fonteSrinivasarao, B. N., e K. Chandrabhushana Rao. "Design and Analysis of Area Efficient 128 Bytes SRAM Architecture". Journal of VLSI Design and Signal Processing 8, n.º 1 (30 de março de 2022): 19–26. http://dx.doi.org/10.46610/jovdsp.2022.v08i01.004.
Texto completo da fonteKim, Woojo, Jimin Kwon e Sungjune Jung. "3D Integration of Flexible and Printed Electronics: Integrated Circuits, Memories, and Sensors". Journal of Flexible and Printed Electronics 2, n.º 2 (dezembro de 2023): 199–210. http://dx.doi.org/10.56767/jfpe.2023.2.2.199.
Texto completo da fonteKim, Ji-Hun, Hyeon-Jun Kim, Ki-Jun Kim, Tae-Hun Shim, Jin-Pyo Hong e Jea-gun Park. "3-Terminal Igzo FET Based 2T0C DRAM Combined Bit-Line Structure". ECS Meeting Abstracts MA2023-02, n.º 30 (22 de dezembro de 2023): 1561. http://dx.doi.org/10.1149/ma2023-02301561mtgabs.
Texto completo da fonteBrtník, Bohumil. "Assembling a Formula for Current Transferring by Using a Summary Graph and Transformation Graphs". Journal of Electrical Engineering 64, n.º 5 (1 de setembro de 2013): 334–36. http://dx.doi.org/10.2478/jee-2013-0050.
Texto completo da fonteLee, Edward, Daehyun Kim, Jinwoo Kim, Sung Kyu Lim e Saibal Mukhopadhyay. "A ReRAM Memory Compiler for Monolithic 3D Integrated Circuits in a Carbon Nanotube Process". ACM Journal on Emerging Technologies in Computing Systems 18, n.º 1 (31 de janeiro de 2022): 1–20. http://dx.doi.org/10.1145/3466681.
Texto completo da fonteChoi, Young Jin, Jihyun Kim, Min Je Kim, Hwa Sook Ryu, Han Young Woo, Jeong Ho Cho e Joohoon Kang. "Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications". Micromachines 12, n.º 3 (12 de março de 2021): 301. http://dx.doi.org/10.3390/mi12030301.
Texto completo da fonteQiu, Haiyang, Dandan Hao, Hui Li, Yepeng Shi, Yao Dong, Guoxia Liu e Fukai Shan. "Transparent and biocompatible In2O3 artificial synapses with lactose–citric acid electrolyte for neuromorphic computing". Applied Physics Letters 121, n.º 18 (31 de outubro de 2022): 183301. http://dx.doi.org/10.1063/5.0124219.
Texto completo da fonteGul, Waqas, Maitham Shams e Dhamin Al-Khalili. "SRAM Cell Design Challenges in Modern Deep Sub-Micron Technologies: An Overview". Micromachines 13, n.º 8 (17 de agosto de 2022): 1332. http://dx.doi.org/10.3390/mi13081332.
Texto completo da fonteArimoto, Yoshihiro, e Hiroshi Ishiwara. "Current Status of Ferroelectric Random-Access Memory". MRS Bulletin 29, n.º 11 (novembro de 2004): 823–28. http://dx.doi.org/10.1557/mrs2004.235.
Texto completo da fonteYu, Li-Zhen, Hung-Chun Chen e Ching-Ting Lee. "Memory mechanisms of vertical organic memory transistors". Applied Physics Letters 96, n.º 23 (7 de junho de 2010): 233301. http://dx.doi.org/10.1063/1.3449120.
Texto completo da fonteSaman, Bander, P. Gogna, El-Sayed Hasaneen, J. Chandy, E. Heller e F. C. Jain. "Spatial Wavefunction Switched (SWS) FET SRAM Circuits and Simulation". International Journal of High Speed Electronics and Systems 26, n.º 03 (27 de junho de 2017): 1740009. http://dx.doi.org/10.1142/s0129156417400092.
Texto completo da fonteChiquet, Philippe, Jérémy Postel-Pellerin, Célia Tuninetti, Sarra Souiki-Figuigui e Pascal Masson. "Enhancement of flash memory endurance using short pulsed program/erase signals". ACTA IMEKO 5, n.º 4 (30 de dezembro de 2016): 29. http://dx.doi.org/10.21014/acta_imeko.v5i4.422.
Texto completo da fonteXie, Dongyu, Xiaoci Liang, Di Geng, Qian Wu e Chuan Liu. "An Enhanced Synaptic Plasticity of Electrolyte-Gated Transistors through the Tungsten Doping of an Oxide Semiconductor". Electronics 13, n.º 8 (13 de abril de 2024): 1485. http://dx.doi.org/10.3390/electronics13081485.
Texto completo da fonteFuller, Elliot J., Scott T. Keene, Armantas Melianas, Zhongrui Wang, Sapan Agarwal, Yiyang Li, Yaakov Tuchman et al. "Parallel programming of an ionic floating-gate memory array for scalable neuromorphic computing". Science 364, n.º 6440 (25 de abril de 2019): 570–74. http://dx.doi.org/10.1126/science.aaw5581.
Texto completo da fonteRumberg, Brandon, Spencer Clites, Haifa Abulaiha, Alexander DiLello e David Graham. "Continuous-Time Programming of Floating-Gate Transistors for Nonvolatile Analog Memory Arrays". Journal of Low Power Electronics and Applications 11, n.º 1 (13 de janeiro de 2021): 4. http://dx.doi.org/10.3390/jlpea11010004.
Texto completo da fonteLee, Sora, Xiaotian Zhang, Thomas McKnight, Bhavesh Ramkorun, Huaiyu Wang, Venkatraman Gopalan, Joan M. Redwing e Thomas N. Jackson. "Low-temperature processed beta-phase In2Se3 ferroelectric semiconductor thin film transistors". 2D Materials 9, n.º 2 (23 de março de 2022): 025023. http://dx.doi.org/10.1088/2053-1583/ac5b17.
Texto completo da fonteNeudeck, Philip G., David J. Spry, Michael J. Krasowski, Liangyu Chen, Lawrence C. Greer, Carl W. Chang, Dorothy Lukco, Glenn M. Beheim e Norman F. Prokop. "Upscaling of 500 °C Durable SiC JFET-R Integrated Circuits". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2021, HiTEC (1 de abril de 2021): 000064–68. http://dx.doi.org/10.4071/2380-4491.2021.hitec.000064.
Texto completo da fonteGherendi, Florin, Daniela Dobrin e Magdalena Nistor. "Transparent Structures for ZnO Thin Film Paper Transistors Fabricated by Pulsed Electron Beam Deposition". Micromachines 15, n.º 2 (12 de fevereiro de 2024): 265. http://dx.doi.org/10.3390/mi15020265.
Texto completo da fonteGrudanov, Oleksandr. "Stability Parameters of Register File Bit Cell with Low Power Consumption Priority". Electronics and Control Systems 3, n.º 77 (27 de setembro de 2023): 40–46. http://dx.doi.org/10.18372/1990-5548.77.17963.
Texto completo da fonteThomas, Stuart. "Transistors and memory get together". Nature Electronics 4, n.º 5 (maio de 2021): 321. http://dx.doi.org/10.1038/s41928-021-00596-8.
Texto completo da fonteNovembre, Christophe, David Guérin, Kamal Lmimouni, Christian Gamrat e Dominique Vuillaume. "Gold nanoparticle-pentacene memory transistors". Applied Physics Letters 92, n.º 10 (10 de março de 2008): 103314. http://dx.doi.org/10.1063/1.2896602.
Texto completo da fonteSedaghat, Mahsa, e Mahdi Salimi. "Evaluation and Comparison of CMOS logic circuits with CNTFET". Journal of Research in Science, Engineering and Technology 3, n.º 04 (13 de setembro de 2019): 1–9. http://dx.doi.org/10.24200/jrset.vol3iss04pp1-9.
Texto completo da fonteChen, Zhuo, Huilong Zhu, Guilei Wang, Qi Wang, Zhongrui Xiao, Yongkui Zhang, Jinbiao Liu et al. "Investigation on Recrystallization Channel for Vertical C-Shaped-Channel Nanosheet FETs by Laser Annealing". Nanomaterials 13, n.º 11 (1 de junho de 2023): 1786. http://dx.doi.org/10.3390/nano13111786.
Texto completo da fonteQi, Hongxia, e Ying Wu. "Synaptic plasticity of TiO2 nanowire transistor". Microelectronics International 37, n.º 3 (16 de janeiro de 2020): 125–30. http://dx.doi.org/10.1108/mi-08-2019-0053.
Texto completo da fonteSalahuddin, Shairfe Muhammad, e Volkan Kursun. "Write Assist SRAM Cell with Asymmetrical Bitline Access Transistors for Enhanced Data Stability and Write Ability". Journal of Circuits, Systems and Computers 25, n.º 01 (15 de novembro de 2015): 1640009. http://dx.doi.org/10.1142/s0218126616400090.
Texto completo da fonteHellkamp, Daniel, e Kundan Nepal. "True Three-Valued Ternary Content Addressable Memory Cell Based On Ambipolar Carbon Nanotube Transistors". Journal of Circuits, Systems and Computers 28, n.º 05 (maio de 2019): 1950085. http://dx.doi.org/10.1142/s0218126619500853.
Texto completo da fonteSeon, Kim, Kim e Jeon. "Analytical Current-Voltage Model for Gate-All-Around Transistor with Poly-Crystalline Silicon Channel". Electronics 8, n.º 9 (4 de setembro de 2019): 988. http://dx.doi.org/10.3390/electronics8090988.
Texto completo da fonteKumari, Nibha, e Prof Vandana Niranjan. "Low-Power 6T SRAM Cell using 22nm CMOS Technology". Indian Journal of VLSI Design 2, n.º 2 (30 de setembro de 2022): 5–10. http://dx.doi.org/10.54105/ijvlsid.b1210.092222.
Texto completo da fonteHuang, Jing, Pengfei Tan, Fang Wang e Bo Li. "Ferroelectric Memory Based on Topological Domain Structures: A Phase Field Simulation". Crystals 12, n.º 6 (29 de maio de 2022): 786. http://dx.doi.org/10.3390/cryst12060786.
Texto completo da fonteJin, Risheng, Keli Shi, Beibei Qiu e Shihua Huang. "Photoinduced-reset and multilevel storage transistor memories based on antimony-doped tin oxide nanoparticles floating gate". Nanotechnology 33, n.º 2 (22 de outubro de 2021): 025201. http://dx.doi.org/10.1088/1361-6528/ac2dc5.
Texto completo da fonteJeon, Juhee, Kyoungah Cho e Sangsig Kim. "Disturbance Characteristics of 1T DRAM Arrays Consisting of Feedback Field-Effect Transistors". Micromachines 14, n.º 6 (28 de maio de 2023): 1138. http://dx.doi.org/10.3390/mi14061138.
Texto completo da fonteBoampong, Amos Amoako, Jae-Hyeok Cho, Yoonseuk Choi e Min-Hoi Kim. "Enhancement of the Retention Characteristics in Solution-Processed Ferroelectric Memory Transistor with Dual-Gate Structure". Journal of Nanoscience and Nanotechnology 21, n.º 3 (1 de março de 2021): 1766–71. http://dx.doi.org/10.1166/jnn.2021.18923.
Texto completo da fonteYurasik G. A., Kulishov A. A., Givargizov M. E. e Postnikov V. A. "Dedicated to the memory of V.D. Aleksandrov Effect of annealing in an inert atmosphere on the electrical properties of crystalline pentacene films". Technical Physics Letters 48, n.º 15 (2022): 30. http://dx.doi.org/10.21883/tpl.2022.15.55278.18983.
Texto completo da fonteSeo, Yeongkyo, e Kon-Woo Kwon. "Ultra High-Density SOT-MRAM Design for Last-Level On-Chip Cache Application". Electronics 12, n.º 20 (12 de outubro de 2023): 4223. http://dx.doi.org/10.3390/electronics12204223.
Texto completo da fonteShim, Hyunseok, Kyoseung Sim, Faheem Ershad, Pinyi Yang, Anish Thukral, Zhoulyu Rao, Hae-Jin Kim et al. "Stretchable elastic synaptic transistors for neurologically integrated soft engineering systems". Science Advances 5, n.º 10 (outubro de 2019): eaax4961. http://dx.doi.org/10.1126/sciadv.aax4961.
Texto completo da fonteDuraivel, A. N., B. Paulchamy e K. Mahendrakan. "Proficient Technique for High Performance Very Large-Scale Integration System to Amend Clock Gated Dual Edge Triggered Sense Amplifier Flip-Flop with Less Dissipation of Power Leakage". Journal of Nanoelectronics and Optoelectronics 16, n.º 4 (1 de abril de 2021): 602–11. http://dx.doi.org/10.1166/jno.2021.2984.
Texto completo da fonteNatarajamoorthy, Mathan, Jayashri Subbiah, Nurul Ezaila Alias e Michael Loong Peng Tan. "Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design". Journal of Nanotechnology 2020 (30 de abril de 2020): 1–7. http://dx.doi.org/10.1155/2020/7608279.
Texto completo da fonteGong, Xiao, Kaizhen Han, Chen Sun, Zijie Zheng, Qiwen Kong, Yuye Kang, Chengkuan Wang et al. "Beol-Compatible Ingazno-Based Devices for 3D Integrated Circuits". ECS Meeting Abstracts MA2022-02, n.º 32 (9 de outubro de 2022): 1186. http://dx.doi.org/10.1149/ma2022-02321186mtgabs.
Texto completo da fonteShih, Wen-Chieh, Chih-Hao Cheng, Joseph Ya-min Lee e Fu-Chien Chiu. "Charge-Trapping Devices Using Multilayered Dielectrics for Nonvolatile Memory Applications". Advances in Materials Science and Engineering 2013 (2013): 1–5. http://dx.doi.org/10.1155/2013/548329.
Texto completo da fonteSong, Chong-Myeong, e Hyuk-Jun Kwon. "Ferroelectrics Based on HfO2 Film". Electronics 10, n.º 22 (11 de novembro de 2021): 2759. http://dx.doi.org/10.3390/electronics10222759.
Texto completo da fonteZhu, Zhiheng, Yunlong Guo e Yunqi Liu. "Application of organic field-effect transistors in memory". Materials Chemistry Frontiers 4, n.º 10 (2020): 2845–62. http://dx.doi.org/10.1039/d0qm00330a.
Texto completo da fonteCheremisinov, D. I., e L. D. Cheremisinova. "Logical gates recognition in a flat transistor circuit". Informatics 18, n.º 4 (31 de dezembro de 2021): 96–107. http://dx.doi.org/10.37661/1816-0301-2021-18-4-96-107.
Texto completo da fonteZhao, Yuhang, e Jie Jiang. "Recent Progress on Neuromorphic Synapse Electronics: From Emerging Materials, Devices, to Neural Networks". Journal of Nanoscience and Nanotechnology 18, n.º 12 (1 de dezembro de 2018): 8003–15. http://dx.doi.org/10.1166/jnn.2018.16428.
Texto completo da fonteSharma, Neha, e Rajeevan Chandel. "Variation tolerant and stability simulation of low power SRAM cell analysis using FGMOS". International Journal of Modeling, Simulation, and Scientific Computing 12, n.º 04 (9 de março de 2021): 2150029. http://dx.doi.org/10.1142/s179396232150029x.
Texto completo da fonteKavitha, Shanmugam, Chandrasekaran Kumar, Hady H. Fayek e Eugen Rusu. "Design and Implementation of CNFET SRAM Cells by Using Multi-Threshold Technique". Electronics 12, n.º 7 (29 de março de 2023): 1611. http://dx.doi.org/10.3390/electronics12071611.
Texto completo da fonteLee, Dong-Hee, Hamin Park e Won-Ju Cho. "Nanowire-Enhanced Fully Transparent and Flexible Indium Gallium Zinc Oxide Transistors with Chitosan Hydrogel Gate Dielectric: A Pathway to Improved Synaptic Properties". Gels 9, n.º 12 (27 de novembro de 2023): 931. http://dx.doi.org/10.3390/gels9120931.
Texto completo da fonteJang, Jiung, Yeonsu Kang, Danyoung Cha, Junyoung Bae e Sungsik Lee. "Thin-Film Optical Devices Based on Transparent Conducting Oxides: Physical Mechanisms and Applications". Crystals 9, n.º 4 (3 de abril de 2019): 192. http://dx.doi.org/10.3390/cryst9040192.
Texto completo da fonteGudlavalleti, R. H., B. Saman, R. Mays, Evan Heller, J. Chandy e F. Jain. "A Novel Peripheral Circuit for SWSFET Based Multivalued Static Random-Access Memory". International Journal of High Speed Electronics and Systems 29, n.º 01n04 (março de 2020): 2040010. http://dx.doi.org/10.1142/s0129156420400108.
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