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Artigos de revistas sobre o tema "Light Emitting Diodes"

Autor: Grafiati

Publicado: 4 de junho de 2021

Última modificação: 2 de novembro de 2024

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1

Salman, RK. "Research note: Light emitting diodes as solar power resources". Lighting Research & Technology 51, n.º 3 (19 de março de 2018): 476–83. http://dx.doi.org/10.1177/1477153518764211.

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This paper investigates the possibility of recycling light emitting diodes from damaged electronic devices, and using them in a similar way to photovoltaic cells in order to reduce environmental pollution. The study used a number of tests with a variety of different parameters for measuring the capability for light emitting diodes to harvest the sun’s rays and to convert them into a useful form of electrical power. The different configurations involved variations of light emitting diode wavelength and number, as well as the connection types between the light emitting diodes (series and parallel) and the angle of incidence of the sun’s rays to the light emitting diode’s base. The results showed promising voltage data for parallel-connected light emitting diodes of lemon (yellow-green) and green colour. The variations in voltage produced by tilting the light emitting diode’s base exhibited similar behaviour to that seen in solar panels. The power that was harvested from the light emitting diodes was extremely low, but the voltage gains showed promising trends that could be employed in useful applications. Hence, light emitting diodes could be re-used to reduce environmental pollution and thus to contribute towards environmental enhancement.

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2

Hayes, Clinton J., Kerry B. Walsh e Colin V. Greensill. "Light-emitting diodes as light sources for spectroscopy: Sensitivity to temperature". Journal of Near Infrared Spectroscopy 25, n.º 6 (10 de outubro de 2017): 416–22. http://dx.doi.org/10.1177/0967033517736164.

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Understanding of light-emitting diode lamp behaviour is essential to support the use of these devices as illumination sources in near infrared spectroscopy. Spectral variation in light-emitting diode peak output (680, 700, 720, 735, 760, 780, 850, 880 and 940 nm) was assessed over time from power up and with variation in environmental temperature. Initial light-emitting diode power up to full intensity occurred within a measurement cycle (12 ms), then intensity decreased exponentially over approximately 6 min, a result ascribed to an increase in junction temperature as current is passed through the light-emitting diode. Some light-emitting diodes displayed start-up output characteristics on their first use, indicating the need for a short light-emitting diode ‘burn in’ period, which was less than 24 h in all cases. Increasing the ambient temperature produced a logarithmic decrease in overall intensity of the light-emitting diodes and a linear shift to longer wavelength of the peak emission. This behaviour is consistent with the observed decrease in the IAD Index (absorbance difference between 670 nm and 720 nm, A670–A720) with increased ambient temperature, as measured by an instrument utilising light-emitting diode illumination (DA Meter). Instruments using light-emitting diodes should be designed to avoid or accommodate the effect of temperature. If accommodating temperature, as light-emitting diode manufacturer specifications are broad, characterisation is recommended.

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3

Feng, XF, W. Xu, QY Han e SD Zhang. "Colour-enhanced light emitting diode light with high gamut area for retail lighting". Lighting Research & Technology 49, n.º 3 (19 de outubro de 2015): 329–42. http://dx.doi.org/10.1177/1477153515610621.

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Light emitting diodes with high colour quality were investigated to enhance colour appearance and improve observers' preference for the illuminated objects. The spectral power distributions of the light emitting diodes were optimised by changing the ratios of the narrow band red, green and blue light emitting diodes, and the phosphor-converted broad-band light emitting diode to get the desired colour rendering index and high gamut area index. The influence of the light emitting diode light on different coloured fabrics was investigated. The experimental results and the statistical analysis show that by optimising the red, green, blue components the light emitting diode light can affect the colour appearance of the illuminated fabrics positively and make the fabrics appear more vivid and saturated due to the high gamut area index. Observers indicate a high preference for the colours whose saturations are enhanced. The results reveal that the colour-enhanced light emitting diode light source can better highlight products and improve visual impression over the ceramic metal halide lamp and the phosphor-converted light emitting diode light source.

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4

Bumai, Yurii, Aleh Vaskou e Valerii Kononenko. "Measurement and Analysis of Thermal Parameters and Efficiency of Laser Heterostructures and Light-Emitting Diodes". Metrology and Measurement Systems 17, n.º 1 (1 de janeiro de 2010): 39–45. http://dx.doi.org/10.2478/v10178-010-0004-x.

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Measurement and Analysis of Thermal Parameters and Efficiency of Laser Heterostructures and Light-Emitting DiodesA thermal resistance characterization of semiconductor quantum-well heterolasers in the AlGaInAs-AlGaAs system (λst≈ 0.8 μm), GaSb-based laser diodes (λst≈ 2 μm), and power GaN light-emitting diodes (visible spectral region) was performed. The characterization consists in investigations of transient electrical processes in the diode sources under heating by direct current. The time dependence of the heating temperature of the active region of a source ΔT(t), calculated from direct bias change, is analyzed using a thermalRTCTequivalent circuit (the Foster and Cauer models), whereRTis the thermal resistance andCTis the heat capacity of the source elements and external heat sink. By the developed method, thermal resistances of internal elements of the heterolasers and light-emitting diodes are determined. The dominant contribution of a die attach layer to the internal thermal resistance of both heterolaser sources and light-emitting diodes is observed. Based on the performed thermal characterization, the dependence of the optical power efficiency on current for the laser diodes is determined.

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5

Muray, Kathleen. "Photometry of diode emitters: light emitting diodes and infrared emitting diodes". Applied Optics 30, n.º 16 (1 de junho de 1991): 2178. http://dx.doi.org/10.1364/ao.30.002178.

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6

Lewis, R. B., D. A. Beaton, Xianfeng Lu e T. Tiedje. "light emitting diodes". Journal of Crystal Growth 311, n.º 7 (março de 2009): 1872–75. http://dx.doi.org/10.1016/j.jcrysgro.2008.11.093.

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7

Li, Yueqi. "Performance Improvement Based on Latitude Classification of Perovskite Light-Emitting Diodes". Applied and Computational Engineering 24, n.º 1 (7 de novembro de 2023): 185–92. http://dx.doi.org/10.54254/2755-2721/24/20230705.

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The Perovskite Light-emitting Diode (PeLED) can effectively convert light energy and electrical energy, and the study of Light-Emitting Diode (LED) is conducive to the efficient use of energy. Starting from the dimension classification of perovskite light-emitting diodes, this paper introduces the advantages of perovskite in different dimensions and the methods to improve the performance of perovskite light-emitting diodes. It is expected to realize the preparation of low-cost and high-performance perovskite light-emitting diodes. Light-emitting diodes or electroluminescent devices have many excellent properties such as high brightness, wide colour gamut, low power consumption, long life and environmental protection. They have been widely used in the field of display and lighting, and have become one of the most competitive products in the optoelectronic industry. With the development of the LED industry and the higher requirements for LED display in the new era, scientific researchers exploration of new electroluminescent materials has also been gradually strengthened. Among them, organic molecules and new low-dimensional halogenated perovskite have attracted much attention because of their many advantages. The performance of LED depends on the type of light-emitting material and device structure. It is also important to understand the light-emitting mechanism of such devices and their internal carrier transport mechanism. Studying the light-emitting mechanism and carrier transport mechanism of LEDs based on different light-emitting materials is not only of scientific significance, but also can provide a reliable theoretical basis for further improving their performance.

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8

Shen, Yida. "Comparative analysis between light-emitting diodes using quantum dots and organic light-emitting diodes". Applied and Computational Engineering 23, n.º 1 (7 de novembro de 2023): 135–40. http://dx.doi.org/10.54254/2755-2721/23/20230626.

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Due to its customizable emission peaks, high saturation chromaticity, and low cost, quantum dot luminescence technology has gained significant attention as the most cutting-edge technology in the optoelectronics sector. Whether the technology of making light emitting diodes from solution treatable quantum dots-(QLED)-can emerge and compete with organic light emitting diode (OLED) displays will become the focus of this paper. Through the property and function of the quantum dots and by looking at some waveforms of quantum dots, the essay describes the specific structure of QLED and the preparation technology of QLED. Furthermore, using these properties and functions, quantum dot technology produces displays with a wider color gamut. And compared with OLED, the paper comes to the conclusion that although QLEDs are slightly inferior in stability to OLEDs, they are superior in color gamut, low cost, and temperature according to the studies of quantum dots and organic light emitting diodes at different temperatures, color rendering indices, and energy band structures.

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9

Sherniyozov, А. А., F. A. Shermatova, Sh D. Payziyev, Sh A. Begimkulov, F. M. Kamoliddinov, A. G. Qahhorov e A. G. Aliboyev. "Simulation of physical processes in light-emitting diode pumped lasers". «Узбекский физический журнал» 23, n.º 3 (7 de dezembro de 2021): 38–42. http://dx.doi.org/10.52304/.v23i3.262.

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We have developed an end-to-end simulation model for the light-emitting diode-pumped solidstate laser using the Monte Carlo photon tracing technique. The model considers complete specifics and spectral characteristics of light-emitting diodes. This model is the first of its kind to enable comprehensive analysis of light-emitting diode-pumped laser systems to the best of our knowledge. The model revealed several critical implications, which can be considered in the practical realization of light-emitting diode-pumped lasers.

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10

Hontaruk, O. M. "Low doses effect in GaP light-emitting diodes". Semiconductor Physics Quantum Electronics and Optoelectronics 19, n.º 2 (6 de julho de 2016): 183–87. http://dx.doi.org/10.15407/spqeo19.02.183.

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11

Malevskaya A. V., Kalyuzhnyy N. A., Mintairov S. A., Salii R. A., Malevskii D. A., Nakhimovich M. V., Larionov V. R., Pokrovskii P. V., Shvarts M. Z. e Andreev V. M. "High efficiency (EQE=37.5%) infrared (850 nm) light-emitting diodes with Bragg and mirror reflectors". Semiconductors 55, n.º 14 (2022): 2166. http://dx.doi.org/10.21883/sc.2022.14.53866.9711.

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Developed and investigated are IR (850 nm) light-emitting diodes based on AlGaAs/Ga(In)As heterostructures grown by the MOCVD technique with multiple quantum wells in the active region and with a double optical reflector consisted of a multilayer Al0.9Ga0.1As/Al0.1Ga0.9As Bragg heterostructure and an Ag mirror layer. Light-emitting diodes with the external quantum efficiency EQE=37.5% at current densities greater than >10 A/cm2 have been fabricated. Keywords: IR light-emitting diode, AlGaAs/GaAs heterostructure, Bragg reflector, InGaAs quantum wells.

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12

Hofmann, Simone, Michael Thomschke, Björn Lüssem e Karl Leo. "Top-emitting organic light-emitting diodes". Optics Express 19, S6 (7 de novembro de 2011): A1250. http://dx.doi.org/10.1364/oe.19.0a1250.

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13

Baigent, D. R., R. N. Marks, N. C. Greenham, R. H. Friend, S. C. Moratti e A. B. Holmes. "Surface-emitting polymer light-emitting diodes". Synthetic Metals 71, n.º 1-3 (abril de 1995): 2177–78. http://dx.doi.org/10.1016/0379-6779(94)03209-o.

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14

Malevskaya A. V., Il’inskaya N. D., Kalyuzhnyy N. A., Malevskiy D. A., Zadiranov Y. M., Pokrovskiy P. V., Blokhin A. A. e Andreeva A. V. "Investigation of methods for texturing light-emitting diodes based on AlGaAs/GaAs heterostructures". Semiconductors 56, n.º 13 (2022): 2081. http://dx.doi.org/10.21883/sc.2022.13.53906.9679.

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Investigations of methods for texturing the light-emitting surface of IR light-emitting diodes (LEDs) (wavelength 850 nm) based on AlGaAs/GaAs heterostructures with Bragg reflectors have been carried out. Developed were methods of liquid and plasma-chemical etching of solid solution for creating peaks (pyramids) of different form, 0.2-1.5 μm height. Estimation of the effect of texturing methods and also configuration of peaks on the light-emitting diode electroluminescence intensity has been performed. The increase of the electroluminescence intensity by 25% has been achieved. Keywords: light-emitting diode, texturing, etching methods, electroluminescence.

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15

Krump, R., S. O. Ferreira, W. Faschinger, G. Brunthaler e H. Sitter. "ZnMgSeTe Light Emitting Diodes". Materials Science Forum 182-184 (fevereiro de 1995): 349–52. http://dx.doi.org/10.4028/www.scientific.net/msf.182-184.349.

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16

Behrman, Keith, e Ioannis Kymissis. "Micro light-emitting diodes". Nature Electronics 5, n.º 9 (22 de setembro de 2022): 564–73. http://dx.doi.org/10.1038/s41928-022-00828-5.

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17

Zhao, Chenyang, Dezhong Zhang e Chuanjiang Qin. "Perovskite Light-Emitting Diodes". CCS Chemistry 2, n.º 4 (agosto de 2020): 859–69. http://dx.doi.org/10.31635/ccschem.020.202000216.

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18

Faschinger, W., R. Krump, G. Brunthaler, S. Ferreira e H. Sitter. "ZnMgSeTe light emitting diodes". Applied Physics Letters 65, n.º 25 (19 de dezembro de 1994): 3215–17. http://dx.doi.org/10.1063/1.112416.

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19

Dodabalapur, Ananth. "Organic light emitting diodes". Solid State Communications 102, n.º 2-3 (abril de 1997): 259–67. http://dx.doi.org/10.1016/s0038-1098(96)00714-4.

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20

Mou, Sinthia Shabnam, Hiroshi Irie, Yasuhiro Asano, Kouichi Akahane, Hiroyuki Kurosawa, Hideaki Nakajima, Hidekazu Kumano, Masahide Sasaki e Ikuo Suemune. "Superconducting Light-Emitting Diodes". IEEE Journal of Selected Topics in Quantum Electronics 21, n.º 2 (março de 2015): 1–11. http://dx.doi.org/10.1109/jstqe.2014.2346617.

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21

Ren, J., K. A. Bowers, B. Sneed, D. L. Dreifus, J. W. Cook, J. F. Schetzina e R. M. Kolbas. "ZnSe light‐emitting diodes". Applied Physics Letters 57, n.º 18 (29 de outubro de 1990): 1901–3. http://dx.doi.org/10.1063/1.104006.

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22

Mills, Alan. "Light Emitting Diodes 2004". III-Vs Review 17, n.º 9 (dezembro de 2004): 22–24. http://dx.doi.org/10.1016/s0961-1290(04)00844-0.

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23

Kioseoglou, George, e Athos Petrou. "Spin Light Emitting Diodes". Journal of Low Temperature Physics 169, n.º 5-6 (28 de junho de 2012): 324–37. http://dx.doi.org/10.1007/s10909-012-0648-x.

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24

Tamulaitis, Gintautas. "Ultraviolet light emitting diodes". Lithuanian Journal of Physics 51, n.º 3 (2011): 177–93. http://dx.doi.org/10.3952/lithjphys.51307.

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25

Sreedhar, K. V. S. "Light Emitting Diodes (LEDs)". IOSR Journal of Electronics and Communication Engineering 9, n.º 2 (2014): 07–13. http://dx.doi.org/10.9790/2834-09270713.

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26

Adivarahan, V., W. H. Sun, A. Chitnis, M. Shatalov, S. Wu, H. P. Maruska e M. Asif Khan. "250nmAlGaN light-emitting diodes". Applied Physics Letters 85, n.º 12 (20 de setembro de 2004): 2175–77. http://dx.doi.org/10.1063/1.1796525.

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27

Mukai, T., S. Nagahama, N. Iwasa, M. Senoh e T. Yamada. "Nitride light-emitting diodes". Journal of Physics: Condensed Matter 13, n.º 32 (26 de julho de 2001): 7089–98. http://dx.doi.org/10.1088/0953-8984/13/32/314.

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28

Suzuki, Hiroyuki, Satoshi Hoshino, Kazuaki Furukawa, Keisuke Ebata, Chien-Hua Yuan e Ingo Bleyl. "Polysilane light-emitting diodes". Polymers for Advanced Technologies 11, n.º 8-12 (2000): 460–67. http://dx.doi.org/10.1002/1099-1581(200008/12)11:8/12<460::aid-pat992>3.0.co;2-3.

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29

Greczmiel, Michael, Peter Pösch, Hans-Werner Schmidt, Peter Strohriegl, Elke Buchwald, Martin Meier, Walter Rieß e Markus Schwoerer. "Polymer light emitting diodes". Macromolecular Symposia 102, n.º 1 (janeiro de 1996): 371–80. http://dx.doi.org/10.1002/masy.19961020144.

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30

Kuttipillai, Padmanaban S., Yimu Zhao, Christopher J. Traverse, Richard J. Staples, Benjamin G. Levine e Richard R. Lunt. "Light-Emitting Diodes: Phosphorescent Nanocluster Light-Emitting Diodes (Adv. Mater. 2/2016)". Advanced Materials 28, n.º 2 (janeiro de 2016): 319. http://dx.doi.org/10.1002/adma.201670012.

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31

Jaafar, NI, A. Sulaiman, S. Moghavvemi, FP Tajudeen e F. Dehdar. "Factors affecting the intention to adopt light-emitting diode lighting at home". Lighting Research & Technology 52, n.º 8 (2 de abril de 2020): 1020–39. http://dx.doi.org/10.1177/1477153520915964.

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This study investigates the significant factors affecting the adoption of light emitting diode lighting among households in Malaysia by conceptualizing and extending the unified theory of acceptance and use of technology through the adaptation of price value and the anticipated emotions of pride and guilt within the model. This study used the partial least squares technique to validate measurements and to test the research hypotheses. The results obtained from analysing 1075 valid survey questionnaires revealed the effects of performance expectancy, effort expectancy and price value on the intention to use light-emitting diodes among Malaysian households. While the results support the mediating role of attitude between the three variables and intention to use light-emitting diodes, the moderating role of anticipated pride on the relationship between attitude and intention to use light-emitting diodes was not supported. The findings confirm that guilt significantly moderates the relationship between attitude and intention.

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32

Choi, Geun Su, Byunghyun Kang, Jinnil Choi, Byeong-Kwon Ju e Young Wook Park. "Reduced Efficiency Roll-Off in Phosphorescent Organic Light-Emitting Diodes with a Double Dopant". Journal of Nanoscience and Nanotechnology 20, n.º 11 (1 de novembro de 2020): 6679–82. http://dx.doi.org/10.1166/jnn.2020.18770.

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The phenomenon by which the efficiency decreases rapidly with the increase in luminance or current density in organic light-emitting diodes is termed efficiency roll-off. In particular, phosphorescent organic light-emitting diodes are known to have higher efficiency, but tend to exhibit higher efficiency roll-off compared with fluorescent organic light-emitting diodes. In this study, we report the efficiency roll-off characteristics of double-dopant phosphorescent organic light-emitting diodes. The double-dopant phosphorescent organic light-emitting diodes showed significantly lower efficiency roll-off compared with single-dopant phosphorescent organic light-emitting diodes. (The double-dopant device showed a 2.5-fold decrease in efficiency roll-off compared with the single-dopant device at 50 mA/cm2, and a 1.6-fold decrease in efficiency roll-off at 100 mA/cm2).

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33

Lee, Ryungyu, Keun-Yeong Choi, Hyukmin Kweon, Borina Ha, Changhee Lee, Soyeon Lee, Seonkwon Kim et al. "P‐199: Silicone‐integrated Photolithography of Small‐molecule Phosphorescent Emitter for Ultrahigh‐resolution Micro‐OLEDs". SID Symposium Digest of Technical Papers 55, n.º 1 (junho de 2024): 2145–46. http://dx.doi.org/10.1002/sdtp.18030.

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In this paper, we propose an ultrahigh‐resolution organic light‐emitting diodes (OLEDs) pixels patterned by conventional photolithography through by incorporating silicone into phosphorescent small‐molecule networks. This silicone‐integrated phosphorescent organic light‐emitting diode (SI‐phOLED), in which silicone molecules are homogeneously crosslinked with small‐molecule light‐emitting materials, can effortlessly achieve to 3,000 PPI ultrahigh‐resolution patterns using the photolithography process.

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Janicki, Marcin, Tomasz Torzewicz, Przemysław Ptak, Tomasz Raszkowski, Agnieszka Samson e Krzysztof Górecki. "Parametric Compact Thermal Models of Power LEDs". Energies 12, n.º 9 (7 de maio de 2019): 1724. http://dx.doi.org/10.3390/en12091724.

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Light-emitting diodes are nowadays the most dynamically developing type of light sources. Considering that temperature is the main factor affecting the electrical and lighting parameters of these devices, thermal models are essential subcomponents of the multidomain models commonly used for simulation of their operation. The authors investigated white power light-emitting diodes soldered to Metal Core Printed Circuit Boards (MCPCBs). The tested devices were placed in a light-tight box on a cold plate and their cooling curves were registered for different diode heating current values and various preset cold plate temperatures. These data allowed the computation of optical and real heating power values and consequently the generation of compact thermal models in the form of Foster and Cauer RC ladders. This also rendered possible the analysis of the influence of the considered factors on the compact model element values and their parametrization. The resulting models yield accurate values of diode junction temperature in most realistic operating conditions and they can be easily included in multidomain compact models of power light emitting diodes.

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Sher, Chin-Wei, Kuo-Ju Chen, Hau-Vei Han, Huang-Yu Lin, Zong-Yi Tu, Hsien-Hao Tu, Chien-Chung Fu e Hao-Chung Ku. "TuC-1-3 White Uniform Flexible Light-Emitting Diodes". Proceedings of JSME-IIP/ASME-ISPS Joint Conference on Micromechatronics for Information and Precision Equipment : IIP/ISPS joint MIPE 2015 (2015): _TuC—1–3–1. http://dx.doi.org/10.1299/jsmemipe.2015._tuc-1-3-1.

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Meiso YOKOYAMA, Meiso YOKOYAMA, LI Chi-Shing LI Chi-Shing e SU Shui-hsiang SU Shui-hsiang. "Novel Field Emission Organic Light Emitting Diodes with Dynode". Chinese Journal of Luminescence 32, n.º 1 (2011): 1–6. http://dx.doi.org/10.3788/fgxb20113201.0001b.

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Itaya, Kazuhiko, Hideto Sugawara e Gen-ichi Hatakoshi. "InGaAlP visible light laser diodes and light-emitting diodes". Journal of Crystal Growth 138, n.º 1-4 (abril de 1994): 768–75. http://dx.doi.org/10.1016/0022-0248(94)90905-9.

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38

Cho, Jaehee, e Jong Kyu Kim. "Transfer or delivery of micro light-emitting diodes for light-emitting diode displays". AIP Advances 9, n.º 10 (outubro de 2019): 100901. http://dx.doi.org/10.1063/1.5118992.

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Kim, Taekyung, Kyung Hyung Lee e Jun Yeob Lee. "Superb lifetime of blue organic light-emitting diodes through engineering interface carrier blocking layers and adjusting electron leakage and an unusual efficiency variation at low electric field". Journal of Materials Chemistry C 6, n.º 31 (2018): 8472–78. http://dx.doi.org/10.1039/c8tc02286k.

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An extremely long lifetime blue organic light-emitting diode (OLED) was developed through managing the electron density and an S-shaped variation of efficiency in blue fluorescent organic light-emitting diodes (FOLEDs) using carrier blocking layers and systematically analyzed in conjunction with the efficiency–lifetime interrelationship.

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40

Hande, Savithri, e Prajna K B. "Survey on Organic Light Emitting Diode". International Journal of Innovative Science and Research Technology 5, n.º 6 (2 de julho de 2020): 630–36. http://dx.doi.org/10.38124/ijisrt20jun492.

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Organic light emitting diodes is a new display technology, which uses organic thin materials that are placed between conductors. When an electric current is applied, a bright light is emitted. OLEDs are thin, transparent, flexible, foldable displays. In 1987 researchers of Eastman Kodak company invented OLED diode technology. The principal inventors were Chemists Ching W. Tang and Steven Van Slyke. In 2001 they received an Industrial Innovation Award from the American Chemical Society for their contribution in organic light emitting diodes. In 2003, Kodak realised its first OLED display had 512 by 218 pixels, 2.2 inch. Two technologies necessary to make flexible OLEDs were invented by Researchers at Pacific Northwest National Laboratory and the Department of Energy. Many researchers are contributing to improve the OLED technology. In this paper we give a brief of what is OLED, types of OLED, different fabrication methods of OLED, advantages and disadvantages of OLED.

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41

Islam, Amirul, Md Tanvir Hossan e Yeong Min Jang. "Convolutional neural networkscheme–based optical camera communication system for intelligent Internet of vehicles". International Journal of Distributed Sensor Networks 14, n.º 4 (abril de 2018): 155014771877015. http://dx.doi.org/10.1177/1550147718770153.

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The evolution of the Internet of vehicles and growing use of mobile devices has created a demand for new wireless communication technologies. Optical camera communication, which uses light-emitting diodes as transmitters and cameras as receivers, has emerged as a promising alternative. Since light-emitting diodes and cameras are already exploring in traffic lights, vehicles, and public lightings, optical camera communication has the potential to intelligently handle transport systems. Although other technologies have been proposed or developed in both academia and industry, they are not yet mature enough to uphold the huge requirements of the Internet of vehicles. This study introduces a new intelligent Internet of vehicles system based on optical camera communication combined with convolutional neural networks. Optical camera communication is a promising candidate for maintaining interference-free and more robust communication, for supporting the Internet of vehicles. Convolutional neural network is introduced for precise detection and recognition of light-emitting diode patterns at long distances and in bad weather conditions. We propose an algorithm to detect the interested light-emitting diode signals (i.e. regions-of-interest), measure the distance using a stereo-vision technique to find out the desired targets, and simulate our proposed scheme using a MATLAB Toolbox. Thus, our system will provide great advantages for next-generation transportation systems.

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Горелик, В. С., А. Ю. Пятышев e Н. В. Сидоров. "Фотолюминесценция ниобата лития, легированного медью". Физика твердого тела 60, n.º 5 (2018): 904. http://dx.doi.org/10.21883/ftt.2018.05.45784.339.

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AbstractThe photoluminescence (PL) of copper-doped lithium niobate single crystals is studied using different UV–Vis light-emitting diodes and a pulse-periodic laser with a wavelength of 266 nm as excitation radiation sources. With the resonance excitation from a 527-nm light-emitting diode, the intensity of PL increases sharply (by two orders of magnitude). When using a 467-nm light-emitting diode for excitation, the PL spectrum is characterized by the presence of multiphonon lines in the range of 520–620 nm.

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Wang, Ming-Sheng, e Guo-Cong Guo. "Inorganic–organic hybrid white light phosphors". Chemical Communications 52, n.º 90 (2016): 13194–204. http://dx.doi.org/10.1039/c6cc03184f.

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Jang, Ho Seong, e Duk Young Jeon. "Yellow-emitting Sr3SiO5:Ce3+,Li+ phosphor for white-light-emitting diodes and yellow-light-emitting diodes". Applied Physics Letters 90, n.º 4 (22 de janeiro de 2007): 041906. http://dx.doi.org/10.1063/1.2432947.

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Masui, Hisashi. "Diode ideality factor in modern light-emitting diodes". Semiconductor Science and Technology 26, n.º 7 (11 de abril de 2011): 075011. http://dx.doi.org/10.1088/0268-1242/26/7/075011.

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Bansal, Kanika, e Shouvik Datta. "Dielectric Response of Light Emitting Semiconductor Junction Diodes: Frequency and Temperature Domain Study". MRS Proceedings 1635 (2014): 49–54. http://dx.doi.org/10.1557/opl.2014.206.

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ABSTRACTWe report a change in the dielectric response of AlGaInP based multi quantum well diodes with the onset of modulated light emission. Observed variation in junction capacitance and modulated light emission, with frequency and temperature, suggests participation of slow defect channels in fast radiative recombination dynamics. Our work establishes prominent connection between electrical and optical properties of light emitting diodes and provides a tool to investigate the interesting condensed matter physics of these structures. Our observations demand a generalized physical framework, beyond conventional models, to understand an active light emitting diode under charge carrier injection. We suggest that the low frequency response can compromise the performance of these diodes under high frequency applications. We also suggest how internal quantum well structure can affect modulated light output efficiency of the device.

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Liu, Huayan, Yongwei Wu, Miao Duan, Kai Cheng e Mingshun Wang. "P‐143: Enhanced Carrier Transportation towards High Luminescent Light‐Emitting Diodes with Multi‐cation Perovskite". SID Symposium Digest of Technical Papers 55, n.º 1 (junho de 2024): 1939–40. http://dx.doi.org/10.1002/sdtp.17970.

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In this work, more conductive and lower work function PEDOT:PSS 1000 was used as hole transporting layer to fabricate high luminescent perovskite light‐emitting diodes. Combined with potassium doping strategy, the according MAxCs1‐xPbBr3 (0 <x <1)perovskite light‐emitting diode reaches a high brightness of65 000 cd/m2.

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Li, Ning, Ying Suet Lau, Yanqin Miao e Furong Zhu. "Electroluminescence and photo-response of inorganic halide perovskite bi-functional diodes". Nanophotonics 7, n.º 12 (26 de novembro de 2018): 1981–88. http://dx.doi.org/10.1515/nanoph-2018-0149.

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AbstractIn this work, we report our efforts to develop a novel inorganic halide perovskite-based bi-functional light-emitting and photo-detecting diode. The bi-functional diode is capable of emitting a uniform green light, with a peak wavelength of 520 nm, at a forward bias of >2 V, achieving a high luminance of >103 cd/m2 at 7 V. It becomes an efficient photodetector when the bi-functional diode is operated at a reverse bias, exhibiting sensitivity over a broadband wavelength range from ultraviolet to visible light. The bi-functional diode possesses very fast transient electroluminescence (EL) and photo-response characteristics, e.g. with a short EL rising time of ~6 μS and a photo-response time of ~150 μS. In addition, the bi-functional diode also is sensitive to 520 nm, the wavelength of its peak EL emission. The ability of the bi-functional diodes for application in high speed visible light communication was analyzed and demonstrated using two identical bi-functional diodes, one performed as the signal generator and the other acted as a signal receiver. The dual functions of light emission and light detection capability, enabled by bi-functional diodes, are very attractive for different applications in under water communication and visible light telecommunications.

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Colace, Lorenzo, Gaetano Assanto e Andrea De Iacovo. "Light-Emitting Diodes for Energy Harvesting". Electronics 13, n.º 8 (22 de abril de 2024): 1587. http://dx.doi.org/10.3390/electronics13081587.

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Energy harvesting is gaining substantial relevance in the realm of ultra-low-power electronics and Internet-of-Things devices with limited access to classic power sources. Several harvesting approaches are available, depending on the energy source; among them, photovoltaic devices benefit from the highest energy density. However, the inclusion of a dedicated photovoltaic cell in a low-power system may result in increased costs and complexity, thus hampering economic sustainability. Conversely, electronic apparatuses often make use of light-emitting-diodes (LEDs), which could be effectively employed as photovoltaic energy harvesters whenever not actively generating photons. Here, we explore the potentials of commercially available LEDs for energy harvesting and determine their quantum efficiency. We examine the correlation of the latter with the spectral response and the available light, demonstrating that visible-wavelength diode emitters can yield very high conversions in the photovoltaic mode. We report measured quantum efficiencies as high as 39% under low-intensity (100 µW/cm2) fluorescent illumination.

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Романов, В. В., И. А. Белых, Э. В. Иванов, П. А. Алексеев, Н. Д. Ильинская e Ю. П. Яковлев. "Светодиоды на основе асимметричной двойной гетероструктуры InAs/InAsSb/InAsSbP для детектирования CO-=SUB=-2-=/SUB=- (λ=4.3 мкм) и CO (λ=4.7 мкм)". Физика и техника полупроводников 53, n.º 6 (2019): 832. http://dx.doi.org/10.21883/ftp.2019.06.47738.9051.

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Asymmetrical double InAs/InAsSb/InAsSbP heterostructures are grown by metalorganic vapor-phase epitaxy. Two types of light–emitting diodes (A and B) were created on basis of grown heterostructures with emission peak at 4.1 µm and 4.7 µm, respectively. The current–voltage and electroluminescent characteristics of light–emitting diodes are investigated at room temperature. When operating at 50 % duty cycle mode (frequency − 512 Hz) with a current of 250 mA, light–emitting diodes A and B produced the optical power of 24 μW and 15 μW, respectively. Under the pulse operation (frequency − 512 Hz, duration − 1 μs) with a current of 2.1 A, the optical power of light–emitting diodes А and B reached the values of 158 μW and 76 μW, respectively. The developed light–emitting diodes can be used as high-effective radiation sources in optical absorption sensors for detection of carbon dioxide and carbon monoxide in the atmosphere.

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